JPS56129325A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS56129325A
JPS56129325A JP3221480A JP3221480A JPS56129325A JP S56129325 A JPS56129325 A JP S56129325A JP 3221480 A JP3221480 A JP 3221480A JP 3221480 A JP3221480 A JP 3221480A JP S56129325 A JPS56129325 A JP S56129325A
Authority
JP
Japan
Prior art keywords
photo etching
photo
output
final point
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3221480A
Other languages
Japanese (ja)
Other versions
JPH0237089B2 (en
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3221480A priority Critical patent/JPS56129325A/en
Publication of JPS56129325A publication Critical patent/JPS56129325A/en
Publication of JPH0237089B2 publication Critical patent/JPH0237089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

PURPOSE:To automatically and precisely detect a final point of photo etching by deciding a point that the intensity of light with a specific wave length decreases to the value of predetermined ratio from a maximum intensity level at photo etching as a final point wherein the above is applied to a formed substance produced by the reaction of a treated substance and photo etching gas. CONSTITUTION:An Si substrate formed Al is exposed in plasma generated by adding high frequency to CCl4 of about 0.1-0.01torr and photo etching is applied to Al. At that time, the discharge of an Al atom occurs in reactive formed gas simultaneously with the start of photo etching and output voltage will suddenly increase in a short period by converting light having a specific wave length of 396mum into an electric signal by a photo diode through an interface filter and the output voltage maintains at the maximum output Vmax during Al photo etching and suddenly drops at the time of finishing Al photo etching to reach 1/k (k is a constant). A final point of photo etching will precisely be detected and uniform photo etching will be performed by feeding the output at the diode to an offset circuit 10 through a terminal 9 for amplification 11 and then by comparing 14 the output through a peak holder 12 and a divider 13.
JP3221480A 1980-03-14 1980-03-14 Dry etching Granted JPS56129325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3221480A JPS56129325A (en) 1980-03-14 1980-03-14 Dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3221480A JPS56129325A (en) 1980-03-14 1980-03-14 Dry etching

Publications (2)

Publication Number Publication Date
JPS56129325A true JPS56129325A (en) 1981-10-09
JPH0237089B2 JPH0237089B2 (en) 1990-08-22

Family

ID=12352665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3221480A Granted JPS56129325A (en) 1980-03-14 1980-03-14 Dry etching

Country Status (1)

Country Link
JP (1) JPS56129325A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218121A (en) * 1982-06-11 1983-12-19 Anelva Corp Monitoring method of silicon dry etching
JPS5928340A (en) * 1982-08-09 1984-02-15 Hitachi Ltd Etching end point detecting system
JPS59159984A (en) * 1983-03-03 1984-09-10 Matsushita Electric Ind Co Ltd Dry etching device
WO2020188632A1 (en) * 2019-03-15 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, recording medium and substrate processing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556407A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Etching method for aluminum
JPS5524941A (en) * 1978-08-09 1980-02-22 Tokuda Seisakusho Ltd Dry etching apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556407A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Etching method for aluminum
JPS5524941A (en) * 1978-08-09 1980-02-22 Tokuda Seisakusho Ltd Dry etching apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218121A (en) * 1982-06-11 1983-12-19 Anelva Corp Monitoring method of silicon dry etching
JPS5928340A (en) * 1982-08-09 1984-02-15 Hitachi Ltd Etching end point detecting system
JPH0468772B2 (en) * 1982-08-09 1992-11-04 Hitachi Ltd
JPS59159984A (en) * 1983-03-03 1984-09-10 Matsushita Electric Ind Co Ltd Dry etching device
JPH0549756B2 (en) * 1983-03-03 1993-07-27 Matsushita Electric Ind Co Ltd
WO2020188632A1 (en) * 2019-03-15 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, recording medium and substrate processing device
TWI744759B (en) * 2019-03-15 2021-11-01 日商國際電氣股份有限公司 Manufacturing method of semiconductor device, recording medium and substrate processing device
JPWO2020188632A1 (en) * 2019-03-15 2021-12-02 株式会社Kokusai Electric Semiconductor device manufacturing method, substrate processing method, program and substrate processing equipment

Also Published As

Publication number Publication date
JPH0237089B2 (en) 1990-08-22

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