JPS56115536A - Detecting method for finish time of dry etching reaction - Google Patents

Detecting method for finish time of dry etching reaction

Info

Publication number
JPS56115536A
JPS56115536A JP1766980A JP1766980A JPS56115536A JP S56115536 A JPS56115536 A JP S56115536A JP 1766980 A JP1766980 A JP 1766980A JP 1766980 A JP1766980 A JP 1766980A JP S56115536 A JPS56115536 A JP S56115536A
Authority
JP
Japan
Prior art keywords
reaction
etching reaction
plasma
time
finish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1766980A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1766980A priority Critical patent/JPS56115536A/en
Publication of JPS56115536A publication Critical patent/JPS56115536A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To detect the finish of the reaction when performing the subject dry etching reaction automatically, simply and in an excellent sensitivity by a method wherein the decision for the finish of reaction is given at the moment when the amount of variation of the quantity of plasma light generated at the time of etching reaction to the time of reaction is reduced below the prescribed value. CONSTITUTION:In the performance of the plasmatic etching reaction, a specific gas, CF4 for instance, is inducted into a reaction tube, the gas is excited and plasma is generated, and as the excited ion in the plasma is reacted to the material to be etched, the plasma light has a characteristic beam of light which appears only in the period while the etching reaction is continued. Therefore, this transforming plasma light such as a fluorine radical light emission, for example, is detected and the finish of the etching reaction is determined when the differential value C of the function indicating the relation between the amount of plasma light emission and the reaction time reaches to a fixed value 1t. Accordingly, the point of time when the etching reaction is finished is automatically detected in an excellent sensitivity and a microscopic pattern can be obtained.
JP1766980A 1980-02-15 1980-02-15 Detecting method for finish time of dry etching reaction Pending JPS56115536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1766980A JPS56115536A (en) 1980-02-15 1980-02-15 Detecting method for finish time of dry etching reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1766980A JPS56115536A (en) 1980-02-15 1980-02-15 Detecting method for finish time of dry etching reaction

Publications (1)

Publication Number Publication Date
JPS56115536A true JPS56115536A (en) 1981-09-10

Family

ID=11950252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1766980A Pending JPS56115536A (en) 1980-02-15 1980-02-15 Detecting method for finish time of dry etching reaction

Country Status (1)

Country Link
JP (1) JPS56115536A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154147U (en) * 1981-03-20 1982-09-28
JPS5879722A (en) * 1981-11-06 1983-05-13 Fujitsu Ltd Controlling method of plasma etching
JPS5994423A (en) * 1982-11-22 1984-05-31 Hitachi Ltd Judging method of end point of etching
JPS6060727A (en) * 1983-09-14 1985-04-08 Hitachi Ltd Etching-endpoint decision device
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
KR20010007450A (en) * 1999-06-21 2001-01-26 가네꼬 히사시 Method for detecting an end point of etching in a plasma-enhanced etching process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421711A (en) * 1977-07-19 1979-02-19 Toshiba Corp Track part working method of magnetic heads
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
JPS54142144A (en) * 1978-04-27 1979-11-06 Anelva Corp Control of dry etching

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421711A (en) * 1977-07-19 1979-02-19 Toshiba Corp Track part working method of magnetic heads
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
JPS54142144A (en) * 1978-04-27 1979-11-06 Anelva Corp Control of dry etching

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154147U (en) * 1981-03-20 1982-09-28
JPS5879722A (en) * 1981-11-06 1983-05-13 Fujitsu Ltd Controlling method of plasma etching
JPS5994423A (en) * 1982-11-22 1984-05-31 Hitachi Ltd Judging method of end point of etching
JPS6060727A (en) * 1983-09-14 1985-04-08 Hitachi Ltd Etching-endpoint decision device
JPH0354460B2 (en) * 1983-09-14 1991-08-20
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
KR20010007450A (en) * 1999-06-21 2001-01-26 가네꼬 히사시 Method for detecting an end point of etching in a plasma-enhanced etching process

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