JPS54148483A - Automatic detecting method for reference mark of exposure - Google Patents

Automatic detecting method for reference mark of exposure

Info

Publication number
JPS54148483A
JPS54148483A JP5733878A JP5733878A JPS54148483A JP S54148483 A JPS54148483 A JP S54148483A JP 5733878 A JP5733878 A JP 5733878A JP 5733878 A JP5733878 A JP 5733878A JP S54148483 A JPS54148483 A JP S54148483A
Authority
JP
Japan
Prior art keywords
sample
mark
stage
reference mark
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5733878A
Other languages
Japanese (ja)
Other versions
JPS5637694B2 (en
Inventor
Nobuo Shimazu
Kiichi Takamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5733878A priority Critical patent/JPS54148483A/en
Publication of JPS54148483A publication Critical patent/JPS54148483A/en
Publication of JPS5637694B2 publication Critical patent/JPS5637694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Abstract

PURPOSE:To secure an assured detection of the reference mark on the test sample even under the high-speed running of the sample by forming the mark put on the sample to no exposed into such shape as to vary periodically along the surface of the sample and then detecting the signals reflected from the mark. CONSTITUTION:Sample stage 11 which is movable toward the XY axis is provided within the exposure device, and sample 12 such as the semiconductor wafer containing reference mark 13 is put on stage 11. Thus, electron beam 14 is radiated on sample 12 while shifting stage 11. In this case, mark 13 is not formed linearly but formed into the sine wave, triangular wave or trapezoid wave shape which varies periodically centering on axial line l1. Then beam 14 is radiated on mark 13 while shifting stage 11, and the reflected electrons are detected through detector element 15. And this output signal is applied to frequency analysis circuit 17 as well as to timing pulse circuit 19. These output signals are then applied to computer 21, amplifier circuit 18 and driving circuit 20 to actuate deflector 16 to secure drawing while detecting mark 13.
JP5733878A 1978-05-15 1978-05-15 Automatic detecting method for reference mark of exposure Granted JPS54148483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5733878A JPS54148483A (en) 1978-05-15 1978-05-15 Automatic detecting method for reference mark of exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5733878A JPS54148483A (en) 1978-05-15 1978-05-15 Automatic detecting method for reference mark of exposure

Publications (2)

Publication Number Publication Date
JPS54148483A true JPS54148483A (en) 1979-11-20
JPS5637694B2 JPS5637694B2 (en) 1981-09-02

Family

ID=13052773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5733878A Granted JPS54148483A (en) 1978-05-15 1978-05-15 Automatic detecting method for reference mark of exposure

Country Status (1)

Country Link
JP (1) JPS54148483A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268052A (en) * 1984-11-06 1986-11-27 Nec Corp Laser trimming method in semiconductor wafer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205388U (en) * 1981-06-25 1982-12-27
JPS58171486U (en) * 1982-05-11 1983-11-16 立山アルミニウム工業株式会社 Door sliding core material fixing fittings
JPS6428164U (en) * 1987-08-12 1989-02-17

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854873A (en) * 1971-11-10 1973-08-01
JPS50145865A (en) * 1974-04-18 1975-11-22
JPS5128385A (en) * 1974-09-02 1976-03-10 Nippon Keibi Hosho Kk JIDOSHOKA SOCHI
JPS51118968A (en) * 1975-04-11 1976-10-19 Toshiba Corp Electron beam exposure device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854873A (en) * 1971-11-10 1973-08-01
JPS50145865A (en) * 1974-04-18 1975-11-22
JPS5128385A (en) * 1974-09-02 1976-03-10 Nippon Keibi Hosho Kk JIDOSHOKA SOCHI
JPS51118968A (en) * 1975-04-11 1976-10-19 Toshiba Corp Electron beam exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61268052A (en) * 1984-11-06 1986-11-27 Nec Corp Laser trimming method in semiconductor wafer

Also Published As

Publication number Publication date
JPS5637694B2 (en) 1981-09-02

Similar Documents

Publication Publication Date Title
JPS56126747A (en) Inspecting method for flaw, alien substance and the like on surface of sample and device therefor
JPS54148483A (en) Automatic detecting method for reference mark of exposure
JPS5780649A (en) Electron ray energy analyzer
JPS56150303A (en) Surface form measuring device using scan-type electronic microscope
JPS54114173A (en) Electronic probe device
JPS5262043A (en) Automatic testing instrument
JPS5355983A (en) Automatic micro defect detector
DE3469600D1 (en) Method of measuring low frequency signal shapes inside integrated circuits with an electron probe
JPS57128834A (en) Inspecting apparatus of foreign substance
JPS5418269A (en) Electron beam detector
WO1987007028A3 (en) High speed laser probe
JPS564004A (en) System for detecting minute defects of body
JPS5481782A (en) Position mark detecting method of electron beam exposure unit
JPS567429A (en) Patterning device
JPS5224554A (en) Surface inspection device
JPS55117945A (en) Defect detection unit
JPS5578451A (en) Inspecting method of contamination in electron-optical system
JPS51150384A (en) Supersonic wave flaw detecting method for steel pipe
JPS5327479A (en) Xxray t ester for bonded surface
JPS5682544A (en) Residual resist inspecting method
JPS5266380A (en) Inspection of patterns
JPS5421277A (en) Inspection method for pattern
JPS57148239A (en) Detecting method for wiring pattern of printed circuit board
JPS564080A (en) Intensity distribution measuring method of rectangular electron beam
JPS54151063A (en) Coordinate measuring apparatus