JPS564080A - Intensity distribution measuring method of rectangular electron beam - Google Patents

Intensity distribution measuring method of rectangular electron beam

Info

Publication number
JPS564080A
JPS564080A JP8036279A JP8036279A JPS564080A JP S564080 A JPS564080 A JP S564080A JP 8036279 A JP8036279 A JP 8036279A JP 8036279 A JP8036279 A JP 8036279A JP S564080 A JPS564080 A JP S564080A
Authority
JP
Japan
Prior art keywords
intensity distribution
mark
electron beam
rectangular
measuring method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8036279A
Other languages
Japanese (ja)
Inventor
Takao Namae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP8036279A priority Critical patent/JPS564080A/en
Publication of JPS564080A publication Critical patent/JPS564080A/en
Pending legal-status Critical Current

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  • Measurement Of Radiation (AREA)

Abstract

PURPOSE: To make possible the intensity distribution measurement of the beam without differential processing of the signal by scanning detection of the rectangular electron beam through a thin mark.
CONSTITUTION: Heavy metal such as platinum palladium is evaporated in a slender cross on the silicone wafer 5 or the like to form a mark. As the rectangular electronic beam EB irradiated on the wafer 5 is crossing the mark 6, it is reflected from the mark 6 according to the intensity distribution of the beam EB. Detecting the reflected electron beam from the mark 6 enables the measurement of the intensity distribution with less effect of noise of the rectangular beam without differential processing.
COPYRIGHT: (C)1981,JPO&Japio
JP8036279A 1979-06-26 1979-06-26 Intensity distribution measuring method of rectangular electron beam Pending JPS564080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8036279A JPS564080A (en) 1979-06-26 1979-06-26 Intensity distribution measuring method of rectangular electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8036279A JPS564080A (en) 1979-06-26 1979-06-26 Intensity distribution measuring method of rectangular electron beam

Publications (1)

Publication Number Publication Date
JPS564080A true JPS564080A (en) 1981-01-16

Family

ID=13716139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8036279A Pending JPS564080A (en) 1979-06-26 1979-06-26 Intensity distribution measuring method of rectangular electron beam

Country Status (1)

Country Link
JP (1) JPS564080A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE48555E1 (en) 2014-05-13 2021-05-18 Berry Film Products Company, Inc. Breathable and microporous thin thermoplastic film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE48555E1 (en) 2014-05-13 2021-05-18 Berry Film Products Company, Inc. Breathable and microporous thin thermoplastic film

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