JPS62205269A - Evaporation source for forming thin film - Google Patents

Abstract

PURPOSE:To optionally regulate proportion of constitutional elements and also to increase the deposited amount of a film by providing an ion takeout port provided with an ion accelerating electrode between an ionization chamber and a vapor deposition chamber and accelerating the constitutional elements in an ionized or excited state and sending these to the vapor deposition chamber. CONSTITUTION:An ionization chamber 20 and a vapor deposition chamber 30 are made to an independent chamber, and an ion takeout port 29, which is a through-hole provided to an ion accelerating electrode 28, is provided between both chambers 20, 30. DC high voltage is impressed between a filament 4 of the ionization chamber 20 and the ion accelerating electrode 28. After constitutional elements for a thin film generated in a generation source 10 are made to an ionized or excited state, these are accelerated and taken out together with plasma components through the ion takeout port 29 and flown into the vapor deposition chamber 30 by accelerating these. The accelerated ions of constitutional elements for the thin film are allowed to collide against a base plate W and absorbed, and the thin film is stuck and built up thereon. In this device, strength of plasma, strength of electron shower, and proportion making the constitutional elements to the ionized or excited state can be optionally regulated.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a technique for forming thin films of various compositions on the surface of a substrate or a technique for modifying the surface.

(Prior art) Conventionally, it has been used to form a thin film on the surface of a substrate. Methods for forming 1Jil include (a) forming a thin film by evaporating the constituent elements of the thin film in a vacuum using methods such as resistance heating, electron impact heating, and light beam heating; (b) using an inert material such as argon. Under suitable pressure of gas,
A method that forms a thin film by applying a direct current or high-frequency voltage to a pair of opposing electrodes to cause a discharge and sputtering one electrode consisting of the constituent elements of the thin film. A method in which the constituent elements of a thin film are evaporated in an inert gas plasma and a thin film is formed on a substrate placed in the same plasma. A method in which a thin film is formed by injecting a compound gas containing a compound gas, colliding it with electrons to ionize it, and applying a voltage to a substrate. Forms a thin film by colliding electrons and ionizing them and applying voltage to the substrate (to) Under appropriate pressure of an inert gas such as argon,
A direct current or high-frequency voltage is applied to the discharge mechanism part of the electrode, which is the constituent element of the thin film, to stimulate the discharge, and the constituent elements of the sputtered thin film are bombarded with electrons, roughly ionized, and a voltage is applied to the substrate. (g) A method in which a thin film is formed by colliding an ion beam of an inert gas such as argon with the material that will be the constituent elements of the thin film and sputtering it; (h) A method in which the constituent elements of the thin film are formed in a vacuum. evaporating and irradiating the surface of the substrate with an ion beam of an inert gas such as argon or an ion beam of constituent elements of the thin film to form 1llu on the surface of the substrate. ? 44 It, which is a constituent element of the film, is used as one electrode and a 7-degree discharge is performed in an inert gas such as argon to evaporate the 114 constituent elements of the thin film and form a thin film. Broadly classified.

(Problems to be Solved by the Invention) Evaporation sources conventionally used to form a thin film on the surface of a substrate have a part that generates ions and a part that evaporates in the same chamber. Therefore, it is not possible to control the constituent elements of a thin film in any ratio, which are in an ionized or excited state with chemically active properties, without being influenced by electrons in plasma or light of various wavelengths. It was impossible. The reason for this will be explained with reference to FIG.

FIG. 5 shows a conventional apparatus, in which numeral 10 is a source for generating constituent elements of the thin film, and numeral 15 is an ion source and vapor deposition chamber. The constituent element generation source 10 heats the constituent element M of the thin film placed in the crucible 11'l+j with a heater 3 installed around the crucible to generate steam (not shown) which becomes the constituent element of the thin film. Gases of constituent elements are supplied to the ion generation source/evaporation chamber 15 which is not in use. In the ion generation chamber 81 and vapor deposition chamber 15, the electron flow E flowing from the filament 4 toward the anode 5 is caused by an inert gas such as argon or xenon introduced from the gas introduction port 6, and vapor or gas that is a constituent element of 7iJJwA. collides with other molecules, and some of them become ionized or excited. An electrode 31 where vapor or gas that is a constituent element of these thin films approaches the substrate W.
is attracted to the substrate W1. : Collided and deposited or attached onto the substrate.

In such conventional equipment, since the part that generates ions and the part that performs vapor deposition on the substrate are located in the same enclosure (ion generation source and vapor deposition chamber 15), ions other than those necessary for vapor deposition are present near the substrate. electrons, impurity gas, etc. reach the
The purity of the deposited elements on the substrate is reduced. In addition, in conventional apparatuses, since the ion generating portion is at a high temperature, the temperature near the substrate is also high, making it difficult to evaporate a plastic film onto a substrate, which cannot be heated to a high temperature. Furthermore, in conventional equipment, the ion generation area is kept in a low vacuum in order to facilitate plasma generation, but even though it is desirable to make the ion generation part in a high vacuum to increase the amount of evaporation onto the substrate, There was a drawback that the vacuum near the substrate was also low.

(Means for Solving Problems) In order to improve the conventional drawbacks, the present invention aims to improve (1) the intensity of plasma of inert gas such as argon or xenon;
loss of gas or vapor that changes the intensity of the plasma of the mixture of the above-mentioned inert gas and the gas or vapor that becomes the constituent element of the thin film, or (2) the intensity of the plasma of the gas or vapor that becomes the constituent element of the S film; ) Ionize or excite the gas or vapor that will become the constituent elements of the thin film passing through the plasma by changing either the intensity of the electron squirt necessary to excite the plasma, or (3) the magnitude of the direct current or pulsating current. This allows you to arbitrarily adjust the rate of change.

Furthermore, the present invention is capable of ionizing constituent elements of a thin film that are in an ionized or excited state with chemically active properties, without being affected by electrons in plasma or light of various wavelengths. Alternatively, by forming thin films of various compositions on the surfaces of substrates made of various materials held at arbitrary temperatures with the constituent elements of the thin films that are not in an excited state, or by controlling the proportions in arbitrary proportions, The surface of the substrate is modified by reacting the surface with constituent elements of the thin film.

The device of the present invention is capable of: (a) supplying a gas that becomes a constituent element of a thin film; or) a source of a constituent element that evaporates the IM constituent elements; and (b) generating plasma by electron bombardment or injection of direct current or high-frequency power. (iii) an ion extraction port where a positive or negative voltage is applied to extract the constituent elements of the thin film, which are partially ionized or excited, together with plasma components; It is composed of a vapor chamber 30 on which a substrate is placed on which ions are attached and deposited.

(Example) Hereinafter, an example of the apparatus of the present invention will be described with reference to FIGS. 1 to 4.

FIG. 1 shows a first embodiment of the present invention, in which a source 10 of the thin film constituent elements M inserted into a crucible 1 and a heater 3 is a conventional source 10 of the thin film constituent elements shown in FIG. It is the same as the iA location of the conventional device, but the ion source and vapor deposition chamber 15
However, in the apparatus of the present invention, the ionization chamber 20 and the vapor deposition chamber 30 are each independent chambers, and between the ionization chamber 20 and the vapor deposition chamber 30 there is an ion accelerating electric current (through hole in the main 28). In the ionization chamber 20, an electron current E flowing from the filament 4 toward the anode 5, similar to the conventional device, is ionized by argon, xenon, etc. introduced from the gas inlet 6. Part of the vapor or gas that forms the constituent elements of the thin film becomes ionized or excited while passing through the plasma excited by colliding with the inert gas.The filament 4 of the ionization chamber 2o and the aforementioned ion accelerating electrode Since a high DC voltage is applied between 28 and 28, these ionized or excited constituent elements of the thin film are accelerated,
'The ions are taken out from the ion extraction port 29 together with the constituent elements of the thin film that are not in an ionized or excited state, or together with the plasma components, and fly into the deposition chamber 30 with acceleration. A substrate W is disposed in the vapor deposition chamber 30, and ions that are accelerated by the substrate W and are constituent elements of the thin film are collided and absorbed, and the thin film is attached and deposited on the substrate M.

FIG. 2 shows a second embodiment of the present invention, in which through holes are provided in the source 10 of the constituent elements of the thin film, the ionization chamber 20, and the ion accelerating Ti electrode 28, similar to the embodiment shown in FIG. It is composed of an ion extraction port 29 and a vapor deposition chamber 30. The difference from the embodiment in FIG. 1 is that in FIG. 1, a high voltage was applied between the filament 4 of the ionization chamber 20 and the ion accelerating electrode 28, whereas in FIG. 28 and an electrode 31 close to the substrate W in the vapor deposition chamber 30 at which a high voltage is applied.

FIG. 3 shows a third embodiment of the present invention, and the difference from the embodiment shown in FIG. 1 or 2 is that in FIG. In contrast to the case in which the electron flow E flowing in the opposite direction was ionized by colliding with an inert gas introduced from the gas inlet 6, in FIG. The gas or vapor that forms the constituent elements of the thin film is ionized.

FIG. 4 shows a fourth embodiment of the present invention, in which a high-frequency current energizing coil 2 is used instead of the high-frequency applying electrode 21 in FIG.
2 is provided, and by its induction effect, l/ of the '1'7g film is
The gas that becomes the I-component element ionizes the vapor.

(Effects) As described above, in the present invention, the conventionally installed ion source/evaporation chamber 15 in FIG. 5 is replaced by the ionization chamber 20 in FIG.
The ionization chamber 20 and the vapor deposition chamber 30 are independent chambers, and between the ionization chamber 20 and the vapor deposition chamber 30, there is an ion extraction port 29 provided with a Uj through hole in the ion acceleration electrode 28.
is installed, so ■ the vapor deposition chamber 30 is replaced by the ionization chamber 20.
By creating a higher vacuum than the ion collision scattering l1
It is possible to reduce the lI rate and avoid an increase in the amount of adhesion to the substrate W, and (2) to prevent electrons and impurity gas from the ion stopper 20 from entering the deposition chamber 30.
It is possible to attach high-purity elements to the substrate W, and furthermore, it is possible to prevent the transfer of high temperatures from the ionization 20, so it is possible to use plus decks such as polyethylene terephthalate and polycarbonate that cannot be heated to high temperatures. Excellent effects such as 11 ions being able to land on the substrate W can be obtained.

[Brief explanation of drawings]

1 to 4 show an embodiment of the apparatus of the present invention, in which an ionization chamber 20 and a vapor deposition chamber 30 are separated, and an extraction port 29 with an ion accelerating electrode 28 is provided between them. Figure 1 shows the first embodiment in which a voltage for acceleration is supplied between the filament and the ion accelerating electrode, and Figure 2 shows the voltage applied for acceleration between the take-out Ti rod and the substrate side electrode. A second embodiment in which a voltage was supplied, FIG. 3 is a third embodiment in which an electrode was provided in the ionization chamber and a high frequency voltage was supplied, and FIG. 4 is a third embodiment in which a high frequency voltage was supplied by winding a coil around the ionization T. The fourth fruit that was supplied! For example, FIG. 5 shows a conventional example consisting of a single chamber. DESCRIPTION OF SYMBOLS 10... Constituent element gas generation source, 2o... Ionization chamber, 28... Ion acceleration electrode, 29... Ion extraction port, 30... Vapor deposition chamber, 31... Substrate side electrode, thin film Constituent elements M, W...Substrate agent Patent attorney Nakai Family disciple 1 Figure υJ //V1 Figure Φ Figure 5 Figure 7 rt

Claims (1)

[Claims] A constituent element generation source 10 for supplying a gas serving as a constituent element of the thin film or evaporating the constituent element of the thin film, and a plasma of a mixture of the inert gas and a gas or vapor serving as a constituent element of the thin film in an inert gas plasma. An ionization chamber 20 for injecting or passing gas or vapor that is a constituent element of the thin film into a plasma of gas or vapor that is a constituent element of the thin film, and a part of the constituent elements of this thin film are ionized or excited. , an ion extraction port 29 for extracting ions by applying a voltage together with the constituent elements of the thin film that are not in an ionized or excited state or together with plasma components; and a vapor deposition chamber in which a substrate on which the ions are attached and deposited is arranged. An evaporation source for thin film formation consisting of 30.