GB1420061A - Sputtering method and apparatus - Google Patents

Sputtering method and apparatus

Info

Publication number
GB1420061A
GB1420061A GB4086372A GB4086372A GB1420061A GB 1420061 A GB1420061 A GB 1420061A GB 4086372 A GB4086372 A GB 4086372A GB 4086372 A GB4086372 A GB 4086372A GB 1420061 A GB1420061 A GB 1420061A
Authority
GB
United Kingdom
Prior art keywords
target
electrode assembly
cathode
magnetic field
alternative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4086372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telic Corp
Original Assignee
Telic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telic Corp filed Critical Telic Corp
Publication of GB1420061A publication Critical patent/GB1420061A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

1420061 Sputtering apparatus. TELIC CORP 4 Sept 1972 [7 Sept 1971 18 May 1972] 40863/72 Heading C7F [Also in Division H1] A method of sputtering material on to a target 31 comprises the steps of: supporting an electrode assembly 14, 16 and said target in a working gas environment; applying electrical voltage to said electrode assembly; and forming a magnetic field 23, which field defines, together with said electrode assembly, one or more traps for containing substantially all electrons emitted by said electrode assembly and having sufficient energy to ionize said working gas; said electrode assembly including at least one electrode comprising the material which is to be sputtered on to said target. The electron traps have the effect of retaining electrons near the target surface until the bulk of their energy has been expanded in ionizing collisions, thus reducing "end losses" and producing a uniform plasma over the target area. In the arrangement shown the cathode 14 is a spool-shaped post and the target 31 is external thereof. The magnetic field is supplied by a coil 20 inside the cathode and a coil 21 surrounding the chamber 10 which is connected through a pipe 29 to a vacuum pump and contains a gas such as argon. The cathode 14 and anode 16 are watercooled. The cathode 14 may be made of stainless steel plated with chromium to be sputtered on to the target 31. The electrode assembly 14, 16 is described in detail Fig. 2, (not shown). (See Specification 1420062). An alternative construction Figs. 3a to 3d (not shown) utilizes a hollow cathode with an internal target. The power source 27 is D.C. Alternative arrangements Figs. 4, 7 and 10, (not shown), some having planar semicircular, annular, or disc electrodes, are operated with a r.f. source. A number of alternative single and double post and hollow cathodes are described Figs. 5, 6 8 and 9, (not shown) with different magnetic field configurations providing both single and multiple electron traps.
GB4086372A 1971-09-07 1972-09-04 Sputtering method and apparatus Expired GB1420061A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US178240A US3884793A (en) 1971-09-07 1971-09-07 Electrode type glow discharge apparatus
US25450472A 1972-05-18 1972-05-18

Publications (1)

Publication Number Publication Date
GB1420061A true GB1420061A (en) 1976-01-07

Family

ID=26874127

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1014075A Expired GB1420062A (en) 1971-09-07 1972-09-04 Cathode structure
GB4086372A Expired GB1420061A (en) 1971-09-07 1972-09-04 Sputtering method and apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1014075A Expired GB1420062A (en) 1971-09-07 1972-09-04 Cathode structure

Country Status (8)

Country Link
US (1) US3884793A (en)
CA (1) CA1006116A (en)
CH (1) CH589940A5 (en)
DE (3) DE2264436A1 (en)
FR (2) FR2152633B1 (en)
GB (2) GB1420062A (en)
IL (1) IL40285A (en)
NL (1) NL7211911A (en)

Cited By (4)

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EP0081331A1 (en) * 1981-12-07 1983-06-15 Ford Motor Company Limited Vacuum sputtering apparatus
GB2170966A (en) * 1985-02-05 1986-08-13 Psi Star Inc Plasma reactor with voltage transformer
US4711767A (en) * 1985-02-05 1987-12-08 Psi Star Plasma reactor with voltage transformer
GB2211861B (en) * 1987-10-30 1992-01-29 Pioneer Electronic Corp Photomagnetic memory medium having a non-columnar structure

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US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
FR2324755A1 (en) * 1975-09-19 1977-04-15 Anvar HIGH SPEED OF DEPOSIT CATHODIC SPRAY DEVICE
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
NL7607473A (en) * 1976-07-07 1978-01-10 Philips Nv SPRAYING DEVICE AND METHOD FOR SPRAYING WITH SUCH A DEVICE
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
DE2655942A1 (en) * 1976-12-10 1978-06-15 Tokuda Seisakusho Kawasaki Kk Metals deposited by cathodic sputtering - in appts. using magnetic field to increase sputtering rate
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
JPS54137642A (en) * 1978-04-12 1979-10-25 Battelle Memorial Institute Electrode for reversible fuel cell* and method of and apparatus for producing same
CA1141704A (en) * 1978-08-21 1983-02-22 Charles F. Morrison, Jr. Magnetically enhanced sputtering device
EP0045822B1 (en) * 1980-08-08 1985-05-29 Battelle Development Corporation Cylindrical magnetron sputtering cathode
DE3069702D1 (en) * 1980-08-08 1985-01-10 Battelle Development Corp Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
US4290877A (en) * 1980-09-08 1981-09-22 The United States Of America As Represented By The Secretary Of The Interior Sputtering apparatus for coating elongated tubes and strips
DE3107914A1 (en) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln METHOD AND DEVICE FOR COATING MOLDED PARTS BY CATODENSIONING
CH649578A5 (en) * 1981-03-27 1985-05-31 Ulvac Corp HIGH-SPEED CATHODE SPRAYING DEVICE.
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
US4376025A (en) * 1982-06-14 1983-03-08 Battelle Development Corporation Cylindrical cathode for magnetically-enhanced sputtering
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS60221563A (en) * 1984-04-17 1985-11-06 Ulvac Corp Bias sputtering device
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
DE3427587A1 (en) * 1984-07-26 1986-02-06 Leybold-Heraeus GmbH, 5000 Köln SPRAYING DEVICE FOR CATODE SPRAYING SYSTEMS
DE3442208C3 (en) * 1984-11-19 1998-06-10 Leybold Ag Method and device for producing hard carbon layers
DE3527626A1 (en) * 1985-08-01 1987-02-05 Leybold Heraeus Gmbh & Co Kg SPRAYING CATODE ACCORDING TO THE MAGNETRON PRINCIPLE
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
DE3636524A1 (en) * 1986-10-27 1988-04-28 Vtu Angel Kancev Apparatus for applying coatings in a vacuum by magnetron atomisation
DE3727901A1 (en) * 1987-08-21 1989-03-02 Leybold Ag SPRAYING CATHODE ACCORDING TO THE MAGNETRON PRINCIPLE
BE1001027A3 (en) * 1987-10-21 1989-06-13 Bekaert Sa Nv METHOD AND DEVICE FOR CLEANING an elongated metal substrate such as a wire, A BAND, A CORD, ETC., AND ACCORDING TO THAT METHOD AND CLEANED SUBSTRATES WITH SUCH substrates ENHANCED OBJECTS OF POLYMER MATERIAL.
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
US4810347A (en) * 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
DE3844064A1 (en) * 1988-12-28 1990-07-05 Leybold Ag MAGNETRON PRINCIPLE CATALOG SPRAYING DEVICE WITH A HOLLOW CATODE AND A CYLINDRICAL TARGET
US4927515A (en) * 1989-01-09 1990-05-22 The Board Of Trustees Of The Leland Stanford Junior University Circular magnetron sputtering device
DE3908252C2 (en) * 1989-03-14 1996-06-20 Leybold Ag Atomizing cathode based on the magnetron principle
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US5178743A (en) * 1989-06-15 1993-01-12 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
DE4018914C1 (en) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
DE4100291C1 (en) * 1991-01-08 1991-10-02 Leybold Ag, 6450 Hanau, De
WO1992018663A1 (en) * 1991-04-19 1992-10-29 Surface Solutions, Incorporated Method and apparatus for linear magnetron sputtering
GB2256085A (en) * 1991-05-13 1992-11-25 Integrated Plasma Ltd Plasma deposition and etching of substrates.
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
DE4135939A1 (en) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De SPRAYING CATHODE
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE4138793C2 (en) * 1991-11-26 2001-03-01 Leybold Ag Method and device for coating a substrate, in particular with electrically non-conductive layers
US5685961A (en) * 1992-03-27 1997-11-11 P & D Medical Coatings, Inc. Method for fabrication of metallized medical devices
DE4333825C1 (en) * 1993-09-28 1995-02-23 Mat Gmbh Apparatus for coating elongated flexible products
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6066242A (en) * 1998-06-10 2000-05-23 David A. Glocker Conical sputtering target
US6235170B1 (en) 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6432286B1 (en) 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
US6352430B1 (en) 1998-10-23 2002-03-05 Goodrich Corporation Method and apparatus for cooling a CVI/CVD furnace
US6440220B1 (en) * 1998-10-23 2002-08-27 Goodrich Corporation Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
US6162298A (en) * 1998-10-28 2000-12-19 The B. F. Goodrich Company Sealed reactant gas inlet for a CVI/CVD furnace
US6193853B1 (en) 1999-02-25 2001-02-27 Cametoid Limited Magnetron sputtering method and apparatus
EP1065294B1 (en) 1999-06-04 2003-10-15 Goodrich Corporation Method and apparatus for pressure measurement in a CVI/CVD furnace
US6257881B1 (en) 1999-06-04 2001-07-10 The B.F. Goodrich Company Combination CVI/CVD and heat treat susceptor lid
DE60024524T2 (en) 1999-06-04 2006-08-31 Goodrich Corp. Method and apparatus for cooling a CVI / CVD furnace
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6497803B2 (en) 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
US6551477B2 (en) 2000-09-25 2003-04-22 Isoflux, Inc. Interlocking cylindrical magnetron cathodes and targets
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US6759807B2 (en) 2002-04-04 2004-07-06 Veeco Instruments, Inc. Multi-grid ion beam source for generating a highly collimated ion beam
AT414215B (en) * 2003-02-12 2006-10-15 Peter Ziger ANNEX TO PLASMA PROCESSING
US20050288773A1 (en) * 2004-01-22 2005-12-29 Glocker David A Radiopaque coating for biomedical devices
EP1761212A4 (en) * 2004-06-28 2009-09-09 Isoflux Inc Porous coatings for biomedical implants
BE1017817A7 (en) * 2006-10-17 2009-08-04 Ardenne Anlagentech Gmbh POWER TERMINAL BLOCK FOR A TUBULAR MAGNETRON.
DE102007049735B4 (en) * 2006-10-17 2012-03-29 Von Ardenne Anlagentechnik Gmbh Supply end block for a tubular magnetron
JP5467735B2 (en) * 2007-07-02 2014-04-09 東ソー株式会社 Cylindrical sputtering target
DE102008052217B3 (en) * 2008-10-17 2011-03-10 Johann Wolfgang Goethe-Universität Electrostatic ion compressor
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
CN105659708B (en) * 2013-11-22 2018-05-01 东丽株式会社 Plasma electrode, corona treatment electrode, CVD electrodes, the manufacture method of plasma CVD equipment and membrane base material
CA3063389C (en) 2019-12-02 2021-03-30 2S Water Incorporated Solution electrode glow discharge apparatus
CA3068769A1 (en) 2020-01-20 2021-07-20 2S Water Incorporated Liquid electrode tip
WO2022059278A1 (en) * 2020-09-16 2022-03-24 株式会社アルバック Drive block for rotary cathode unit

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US3282815A (en) * 1963-07-01 1966-11-01 Ibm Magnetic control of film deposition
US3282816A (en) * 1963-09-16 1966-11-01 Ibm Process of cathode sputtering from a cylindrical cathode
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3507774A (en) * 1967-06-02 1970-04-21 Nat Res Corp Low energy sputtering apparatus for operation below one micron pressure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0081331A1 (en) * 1981-12-07 1983-06-15 Ford Motor Company Limited Vacuum sputtering apparatus
GB2170966A (en) * 1985-02-05 1986-08-13 Psi Star Inc Plasma reactor with voltage transformer
US4711767A (en) * 1985-02-05 1987-12-08 Psi Star Plasma reactor with voltage transformer
GB2211861B (en) * 1987-10-30 1992-01-29 Pioneer Electronic Corp Photomagnetic memory medium having a non-columnar structure
US5135819A (en) * 1987-10-30 1992-08-04 Pioneer Electronic Corporation Photomagnetic memory medium having a non-columnar structure

Also Published As

Publication number Publication date
FR2168124A1 (en) 1973-08-24
CA1006116A (en) 1977-03-01
DE2264437A1 (en) 1973-10-31
FR2152633B1 (en) 1978-06-02
NL7211911A (en) 1973-03-09
IL40285A0 (en) 1972-11-28
FR2168124B1 (en) 1976-12-03
DE2264436A1 (en) 1973-12-20
DE2243708A1 (en) 1973-04-26
IL40285A (en) 1976-01-30
GB1420062A (en) 1976-01-07
FR2152633A1 (en) 1973-04-27
CH589940A5 (en) 1977-07-29
US3884793A (en) 1975-05-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee