JPS6422029A - Plasma etching system - Google Patents
Plasma etching systemInfo
- Publication number
- JPS6422029A JPS6422029A JP17869287A JP17869287A JPS6422029A JP S6422029 A JPS6422029 A JP S6422029A JP 17869287 A JP17869287 A JP 17869287A JP 17869287 A JP17869287 A JP 17869287A JP S6422029 A JPS6422029 A JP S6422029A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- etching
- base plate
- magnetic field
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an etching system capable of etching an article to be treated at high speed without damage by generating plasma by microwaves and a magnetic field, sealing generated plasma near a base plate by a magnetic field for sealing and effectively utilizing the plasma. CONSTITUTION:An etching gas is introduced into an silica tube 11 for a vacuum vessel 9. Currents are caused to flow through coils 5, 6 to generate a magnetic field while microwaves are generated by a magnetron 7, and the magnetic field and a high-frequency electric field are worked on the etching gas to generate plasma. Generated plasma is sealed into an etching chamber near a base plate 10 by a mirror field B applied by the coils 5, 6, and high-density plasma is produced near the base plate 10. Sealed plasma is accelerated by DC currents by accelerating electrodes 1, 2, and the surface of a wafer on the base plate 10 is etched. Accordingly, the ion density of plasma used for etching is increased, and the wafer can be etched at high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17869287A JPS6422029A (en) | 1987-07-17 | 1987-07-17 | Plasma etching system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17869287A JPS6422029A (en) | 1987-07-17 | 1987-07-17 | Plasma etching system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422029A true JPS6422029A (en) | 1989-01-25 |
Family
ID=16052879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17869287A Pending JPS6422029A (en) | 1987-07-17 | 1987-07-17 | Plasma etching system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422029A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0227718A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Plasma treating method and plasma treater using the same method |
-
1987
- 1987-07-17 JP JP17869287A patent/JPS6422029A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0227718A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Plasma treating method and plasma treater using the same method |
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