JPS5867870A - Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching - Google Patents

Abstract

PURPOSE:To enable to uniformly etch many workpieces with a high speed at once, by arranging a permanent magnet at the back surface of a holder for a base plate, pressing the leakge magnetic field onto the surface of the base plate with an attracting magnetic field, and blowing out gas through the center of the magnet. CONSTITUTION:A plurality of workpieces 5 are mounted on a target electrode 1. A cathode 2 for a back-surface magnetic field is provided at the back surface of the electrode 1. The center of the cathode 2 is handled as a pole N, while its periphery is handled as a pole S. In addition, several auxiliary cylindrical magnets 3 are provided in response to the size of the electrode 1. An attracting magnetic field 7 is formed by a solenoid coil 4 in an outer space which is provided slightly movably along a vertical direction at the periphery of a treating chamber 12, to press a leakage magnetic field 8 from the back surface of the electrode 1 onto the surfaces of the workpieces 5, to increase its magnetic flux density and to accelerate ionization along the surface. Inert or active gas 9 blown out through the center of the electrode 1 is diffused along the radial direction. The magnetic field becomes stronger toward the periphery, and the rate of the reaction is also increased. Reactive ion or plasma etching is performed by applying a current 13 through the electrode 1 or an anode electrode 6.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dry etching apparatus for use in producing fine circuits such as LSI and VLSI. Conventionally, in reactive ion etching and plasma etching, dry etching was generally performed by applying a high frequency or microwave electric field to two parallel flat plates as poles. However, the above-mentioned method had the disadvantage that the etching speed was extremely slow. Recently, dry etching apparatuses have also appeared in which a magnet is scanned in a magnetron-type manner, but this scanning method is very cumbersome and complicates the apparatus.

The present invention has been made in consideration of the above-mentioned points, and its purpose is to process a large number of processing objects (wafers) at once at high speed.
An object of the present invention is to provide a magnetic field compression magnetron type high speed plasma etching and reactive ion etching apparatus for processing.

Next, one embodiment of the present invention will be described based on the drawings.

~ In FIG. 1, 72 indicates a processing chamber, the inside of which is communicated with a vacuum exhaust blade O, an inert gas source 9, and an active gas source 9.
For example, the processing gas 2 and /
is the target 1i for placing the workpiece (wafer)
At t, 8ii, there is a gas source outlet 9 in the center, and a magnetic pole 2 of the back magnetic field is provided so as to wrap around it from the back side. The magnet is protected by stainless steel or the like, and several coaxial and cylindrical auxiliary magnets shown in 3 are installed depending on the size of the target electrode. The treatment name Q is placed around the treatment chamber so that the magnetic field can be applied efficiently.
An external space solenoid coil that can be moved slightly up and down generates a F magnetizing field 7, for example, generates a magnetic field of about /, ;) 0 Gauss, and forces the leakage magnetic field from the back surface of the target onto the surface of the workpiece (wafer) S. increases the magnetic flux density and promotes ionization at the surface. The inert gas and active gas 9 blown out from the center of the target diffuse in the radial direction and become diluted toward the periphery. Conversely, the magnetic field parallel to the target electrode is weak at the center and the reaction rate increases at the periphery. If supply v3 is performed from the target electrode 1-111 and the anode electrode B is grounded, reactive ion etching is performed, and if the target electrode is grounded and power is supplied from the anode electrode B, plasma etching is performed. Thus, by appropriately setting the gas flow rate and the strength of the pressing magnetic field, all wafers can be etched quickly and uniformly.

As described above, in the present invention, the magnetic pole of the back magnetic field of the target electrode is arranged on the side surface of the target, and the auxiliary magnet 3 is installed outside the processing head 2 between the target and the anode electrode 6 according to the size of the target electrode. A solenoid coil is installed in the space to increase the magnetic field parallel to the target surface to promote etching, and has the effect of uniformly etching a large number of wafers at once at high speed. It has superior functions comparable to ion etching and plasma etching equipment.

[Brief explanation of drawings]

The figures show an example of a high-speed plasma etching apparatus according to the present invention, and FIG. 1 is a central vertical sectional view of the embodiment, and FIG. 2 is a sectional view taken along line A--A of the same. ／・・・・・・・・・Target electrode 2・・・・・・・・・Magnetic pole 3 of the back magnetic field・・・・・・Auxiliary magnet da・・・・・・External space solenoid coil! ...
...Workpiece (wafer) B...Substrate GL pole 7...Crimping magnetic field goo...Leakage magnetic field 9.°... ...Inert, active gas introduction 10...
・・・Vacuum exhaust system／／・・・・・・Insulation spacer／! ...Self...Processing room/3...DC power supply

Claims (1)

[Claims] A permanent magnet is placed on the back side of the substrate holder (lower electrode),
For example, the center is the N pole and the outer periphery of the electrode is the S pole, or for large-area electrodes, double or triple auxiliary intermediate magnets are placed on two sides, and the leakage magnetic field is applied to the substrate surface using a crimping magnetic field. Press and blow out gas from the center of the magnetic pole,
A high-speed plasma etching or reactive ion etching apparatus N characterized by uniform etching.