JPS5867870A - Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching - Google Patents
Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etchingInfo
- Publication number
- JPS5867870A JPS5867870A JP16635981A JP16635981A JPS5867870A JP S5867870 A JPS5867870 A JP S5867870A JP 16635981 A JP16635981 A JP 16635981A JP 16635981 A JP16635981 A JP 16635981A JP S5867870 A JPS5867870 A JP S5867870A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- electrode
- center
- pole
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はLSI、VLSIなどの微細回路の作成に用い
るためのドライエツチング装置に関するものであル。従
来は)反応性イオンエツチング、プラズマエツチングに
おいては2板の平行平板を極に高周波又はマイクロ波の
電界を印加してドライエツチングをするのが一般的であ
った。しかし、上記したものにはエツチング速度が著し
く遅いという欠点があった。又マグネトロン形の方法で
磁石を走査するという方法のドライエツチング装置=置
も最近出現しているが、この走査する方法は非常に面倒
であるとともに装置を複雑にしている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dry etching apparatus for use in producing fine circuits such as LSI and VLSI. Conventionally, in reactive ion etching and plasma etching, dry etching was generally performed by applying a high frequency or microwave electric field to two parallel flat plates as poles. However, the above-mentioned method had the disadvantage that the etching speed was extremely slow. Recently, dry etching apparatuses have also appeared in which a magnet is scanned in a magnetron-type manner, but this scanning method is very cumbersome and complicates the apparatus.
本発明は叙上の点に鉦みて成されたもので、その目的と
するところは高速で一度に多数の被処理物(ウェハー)
を処理する磁界圧着マグネトロン形高速プラズマエツチ
ングおよび反応性イオンエツチング装置を提供すること
である。The present invention has been made in consideration of the above-mentioned points, and its purpose is to process a large number of processing objects (wafers) at once at high speed.
An object of the present invention is to provide a magnetic field compression magnetron type high speed plasma etching and reactive ion etching apparatus for processing.
次に本発明の一実施例を図面にもとづき説明する。Next, one embodiment of the present invention will be described based on the drawings.
〜
第1図で72は処理室を示し、該処理もダはその内部を
真空排気刃Oと不活外、活性ガス源9とに連通されて、
例えば、数T or r −@10 T o r r程
度の責空不活性、活性ガス室に形成される処理智2と/
は被処理物(ウェハー)汐を置くためのターゲット1i
t、8iiで中心にガス源の吹き出し口9があり、それ
を裏面から包み込むように裏面磁界の磁極2を設けその
2は裏面磁界の磁極中心に穴のあいた中心がNM、周辺
がS栖のステンレスなどで保護された磁石であり、さら
にターゲット電極の大きさに応じた3に示す同軸同筒状
の補助的な磁石を数個設置する。処理名Qの周辺には効
率良く磁界の圧着が出来るよう処理室の周囲に配置し、
上下に微動可能な外部空間ソレノイドコイルグでF着磁
界7を発生し、例えば約/、;)0ガウスの磁界を発生
させターゲット裏面からの漏えい磁界どを被処理物(ウ
ェハー)S表面に押し付けて磁束密度を増加させ、表面
でのイオン化を促進する。ターゲット中心から吹き出し
た不活性ガス、活性ガス9は半径方向に拡散し周辺に向
って希薄になる。逆にターゲット電極/に平行な磁界は
中心では弱く周、反応割合も周辺で増加する。給v3を
ターゲラ1−111極/から行ないアノード電極乙を接
地すれば反応性イオンエツチング、ターゲット電極/を
接地しアノード電極乙から給電すればプラズマエツチン
グとなる。かくして、ガスの流量、圧着磁界の強さを適
当に設定すれば全ウェハーが高速にかつ均一なエツチン
グがなされる。~ In FIG. 1, 72 indicates a processing chamber, the inside of which is communicated with a vacuum exhaust blade O, an inert gas source 9, and an active gas source 9.
For example, the processing gas 2 and /
is the target 1i for placing the workpiece (wafer)
At t, 8ii, there is a gas source outlet 9 in the center, and a magnetic pole 2 of the back magnetic field is provided so as to wrap around it from the back side. The magnet is protected by stainless steel or the like, and several coaxial and cylindrical auxiliary magnets shown in 3 are installed depending on the size of the target electrode. The treatment name Q is placed around the treatment chamber so that the magnetic field can be applied efficiently.
An external space solenoid coil that can be moved slightly up and down generates a F magnetizing field 7, for example, generates a magnetic field of about /, ;) 0 Gauss, and forces the leakage magnetic field from the back surface of the target onto the surface of the workpiece (wafer) S. increases the magnetic flux density and promotes ionization at the surface. The inert gas and active gas 9 blown out from the center of the target diffuse in the radial direction and become diluted toward the periphery. Conversely, the magnetic field parallel to the target electrode is weak at the center and the reaction rate increases at the periphery. If supply v3 is performed from the target electrode 1-111 and the anode electrode B is grounded, reactive ion etching is performed, and if the target electrode is grounded and power is supplied from the anode electrode B, plasma etching is performed. Thus, by appropriately setting the gas flow rate and the strength of the pressing magnetic field, all wafers can be etched quickly and uniformly.
本発明は上述した様にターゲット電極/の裏面磁界の磁
極をターゲット側面に配置させ、ターゲットの電極/の
大きさに応じて補助磁石3を設はターゲットとアノード
電極6間の処理智2の外部空間にソレノイドコイルtを
装着し、ターゲット表面に平行な磁界を増加させてエツ
チングを促進させ、高速でかつ一度に多数のウェハーを
均−良くエツチングさせる効果をもつもので、これは従
来の反応性イオンエツチング、プラズマエツチング装置
におよばないすぐれた機能を備えるものである。As described above, in the present invention, the magnetic pole of the back magnetic field of the target electrode is arranged on the side surface of the target, and the auxiliary magnet 3 is installed outside the processing head 2 between the target and the anode electrode 6 according to the size of the target electrode. A solenoid coil is installed in the space to increase the magnetic field parallel to the target surface to promote etching, and has the effect of uniformly etching a large number of wafers at once at high speed. It has superior functions comparable to ion etching and plasma etching equipment.
図は本発明に係る高速プラズマエツチング装置の実例を
示し、第1図は実施例の中央縦断面図、第2図は同上の
A−A線断面図である。
/・・・・・・・・ターゲット電極
2・・・・・・・・裏面磁界の磁極
3・・・・・・・・補助磁石
ダ・・・・・・・・外部空間ソレノイドコイル!・・・
・・・・・被処理物(ウェハー)乙・・・・・・・・サ
ブストレートgl極7・・・・・・・・圧着磁界
goo・・・・・・漏えい磁界
9・°・・・・・・不活性、活性ガス導入10・・・・
・・・真空排気系
//・・・・・・・絶縁スペーサ
/!・・・自・・処理室
/3・・・・・・・直流電源The figures show an example of a high-speed plasma etching apparatus according to the present invention, and FIG. 1 is a central vertical sectional view of the embodiment, and FIG. 2 is a sectional view taken along line A--A of the same. /・・・・・・・・・Target electrode 2・・・・・・・・・Magnetic pole 3 of the back magnetic field・・・・・・Auxiliary magnet da・・・・・・External space solenoid coil! ...
...Workpiece (wafer) B...Substrate GL pole 7...Crimping magnetic field goo...Leakage magnetic field 9.°... ...Inert, active gas introduction 10...
・・・Vacuum exhaust system//・・・・・・Insulation spacer/! ...Self...Processing room/3...DC power supply
Claims (1)
たとえば中央がN極、電極外側周辺をS葎とし、または
大面積の電極ではさらに「2面に二重又は三重の補助的
な中間磁石を配置し、圧着磁界でそれらの漏えい磁界を
基板表面に押し付けかつガスを磁極中心より吹き出し、
均一なエツチングを特徴とする高速プラズマエツチング
又は反応性イオンエツチング装置N。A permanent magnet is placed on the back side of the substrate holder (lower electrode),
For example, the center is the N pole and the outer periphery of the electrode is the S pole, or for large-area electrodes, double or triple auxiliary intermediate magnets are placed on two sides, and the leakage magnetic field is applied to the substrate surface using a crimping magnetic field. Press and blow out gas from the center of the magnetic pole,
A high-speed plasma etching or reactive ion etching apparatus N characterized by uniform etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16635981A JPS5867870A (en) | 1981-10-20 | 1981-10-20 | Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16635981A JPS5867870A (en) | 1981-10-20 | 1981-10-20 | Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5867870A true JPS5867870A (en) | 1983-04-22 |
JPS61911B2 JPS61911B2 (en) | 1986-01-11 |
Family
ID=15829920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16635981A Granted JPS5867870A (en) | 1981-10-20 | 1981-10-20 | Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5867870A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151028A (en) * | 1982-01-26 | 1983-09-08 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetically strengthened plasma treating method and device |
JPS611025A (en) * | 1985-03-07 | 1986-01-07 | Toshiba Corp | Plasma processing apparatus |
AT387989B (en) * | 1987-09-01 | 1989-04-10 | Miba Gleitlager Ag | DEVICE FOR THE TREATMENT OF THE INTERIOR AREAS OF OBJECTS SWITCHED AS A CATHODE BY ION Bombardment FROM A GAS DISCHARGE |
JPH01214123A (en) * | 1988-02-23 | 1989-08-28 | Tel Sagami Ltd | Plasma processing device |
KR100296392B1 (en) * | 1999-06-09 | 2001-07-12 | 박호군 | An apparatus for synthesizing a diamond film by dc pacvd |
-
1981
- 1981-10-20 JP JP16635981A patent/JPS5867870A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58151028A (en) * | 1982-01-26 | 1983-09-08 | マテリアルズ・リサ−チ・コ−ポレ−シヨン | Magnetically strengthened plasma treating method and device |
JPH0430177B2 (en) * | 1982-01-26 | 1992-05-21 | ||
JPS611025A (en) * | 1985-03-07 | 1986-01-07 | Toshiba Corp | Plasma processing apparatus |
JPH0530301B2 (en) * | 1985-03-07 | 1993-05-07 | Tokyo Shibaura Electric Co | |
AT387989B (en) * | 1987-09-01 | 1989-04-10 | Miba Gleitlager Ag | DEVICE FOR THE TREATMENT OF THE INTERIOR AREAS OF OBJECTS SWITCHED AS A CATHODE BY ION Bombardment FROM A GAS DISCHARGE |
JPH01214123A (en) * | 1988-02-23 | 1989-08-28 | Tel Sagami Ltd | Plasma processing device |
KR100296392B1 (en) * | 1999-06-09 | 2001-07-12 | 박호군 | An apparatus for synthesizing a diamond film by dc pacvd |
Also Published As
Publication number | Publication date |
---|---|
JPS61911B2 (en) | 1986-01-11 |
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