JPS644023A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS644023A
JPS644023A JP15901387A JP15901387A JPS644023A JP S644023 A JPS644023 A JP S644023A JP 15901387 A JP15901387 A JP 15901387A JP 15901387 A JP15901387 A JP 15901387A JP S644023 A JPS644023 A JP S644023A
Authority
JP
Japan
Prior art keywords
etching
ecr
dry etching
excitation currents
plasma generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15901387A
Other languages
Japanese (ja)
Inventor
Tadashi Matsuo
Osamu Masutomi
Masao Otaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP15901387A priority Critical patent/JPS644023A/en
Publication of JPS644023A publication Critical patent/JPS644023A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve an etching shape and the etching uniformity and to enhance the universality of an ECR dry etching device by a method wherein a magnetic coil surrounding a plasma generation chamber is divided and excitation currents which are mutually independent are made to flow. CONSTITUTION:Excitation currents are designated as i8-i10 in divided magnetic coils 8-10; if the electric currents specified as i8<i9<i10 flow, a strength distribution 11 of a magnetic field approaches a line parallel to an axis; a region 12 which satisfied a condition for electron cyclotron resonance (ECR) by microwaves is extended to a wider range of a plasma generation chamber; an electric discharge at a low gas pressure becomes possible. If the excitation currents i8-i10 are controlled at appropriate values, it is possible to form a ring-shaped high ion density region of an optimum size corresponding to a change in a size of a wafer and a change in an etching condition. By this setup, an ECR dry etching device can be applied to an etching operation requiring the low shock energy in order to suppress the damage on the surface.
JP15901387A 1987-06-26 1987-06-26 Dry etching device Pending JPS644023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15901387A JPS644023A (en) 1987-06-26 1987-06-26 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15901387A JPS644023A (en) 1987-06-26 1987-06-26 Dry etching device

Publications (1)

Publication Number Publication Date
JPS644023A true JPS644023A (en) 1989-01-09

Family

ID=15684338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15901387A Pending JPS644023A (en) 1987-06-26 1987-06-26 Dry etching device

Country Status (1)

Country Link
JP (1) JPS644023A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0481198A2 (en) * 1990-10-16 1992-04-22 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
US5181986A (en) * 1990-04-02 1993-01-26 Fuji Electric Co., Ltd. Plasma processing apparatus
US8691874B2 (en) 2000-03-02 2014-04-08 Kato Pharmaceuticals, Inc. Treatment of ophthalmic disorders using urea

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177728A (en) * 1985-02-04 1986-08-09 Nippon Telegr & Teleph Corp <Ntt> Apparatus for irradiation with low-energy ionized particle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177728A (en) * 1985-02-04 1986-08-09 Nippon Telegr & Teleph Corp <Ntt> Apparatus for irradiation with low-energy ionized particle

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5133825A (en) * 1987-04-08 1992-07-28 Hi Tachi, Ltd. Plasma generating apparatus
US5181986A (en) * 1990-04-02 1993-01-26 Fuji Electric Co., Ltd. Plasma processing apparatus
EP0481198A2 (en) * 1990-10-16 1992-04-22 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
EP0481198A3 (en) * 1990-10-16 1992-06-03 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
US8691874B2 (en) 2000-03-02 2014-04-08 Kato Pharmaceuticals, Inc. Treatment of ophthalmic disorders using urea

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