JPS6457622A - Reactive ion etching system - Google Patents

Abstract

PURPOSE:To obtain an equipment capable of uniform etching on the whole surface of a substrate with high speed, by a method wherein uniform magnetic field parallel to the surface of a substrate to be processed is formed, by installing a yoke and the like arranged in the noncontact state with material to be etched, a cathode and an anode, both ends of which face both end parts of the material to be etched. CONSTITUTION:The title equipment comprizes the following; a cathode 3 retaining a material 4 to be etched, an anode 2 facing the cathode 3, a yoke 6 arranged in the noncontact state with material 4 to be etched, the cathode 3 and the anode 2, both ends of which face both ends of material 4 to be etched, and a coil 5 arranged at the position including the cathode 3 and the anode 2, which generates magnetic field parallel to the material 4 to be etched. Plasma is generated, e.g., by applying electric power to the cathode 2 via a matching box 10 from an RF power supply 9, and forming electric field of radio wave between the anode 2 and the cathode 3. Further, magnetic field of ordinary 100-400 gauss parallel to the material 4 to be etched is formed between the anode 2 and the cathode 3, by making direct current flow in the coil 5 by an exciting power supply 11.