CN102418140A - Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously - Google Patents
Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously Download PDFInfo
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- CN102418140A CN102418140A CN2011104078482A CN201110407848A CN102418140A CN 102418140 A CN102418140 A CN 102418140A CN 2011104078482 A CN2011104078482 A CN 2011104078482A CN 201110407848 A CN201110407848 A CN 201110407848A CN 102418140 A CN102418140 A CN 102418140A
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Abstract
The invention discloses a czochralski silicon monocrystal growth furnace and a method for filling silicon melts continuously. In the czochralski silicon monocrystal growth furnace, a monocrystal lifting part comprises a lifting head, a slave furnace chamber, an isolating valve, a furnace body, an upper part heat-preserving cover, a heater, a crucible lifting rotary mechanism, a graphite crucible, a crucible, a steel wire rope, a chuck and the like; a melt continuously-filled part comprises a small furnace cylinder, a charging bin, the isolating valve, a charging and weighing device, a continuously-melted tube, a heat-insulating body, the heater, a melt temperature stabilizing tube and the like; and by the czochralski silicon monocrystal growth furnace, the continuous melting of polycrystalline silicon and the continuous growth of silicon monocrystal are realized. In the czochralski silicon monocrystal growth furnace, a spacing interval of opening a mono-crystal furnace for two times adjacently can be prolonged by over 30 days, the size of the crucible can be reduced effectively, the consumption and oxygen content of the czochralski silicon monocrystal growth method can be reduced effectively, and the production efficiency can be improved.
Description
Technical field
The present invention relates to czochralski silicon monocrystal growth field, relate in particular to a kind of silicon melt the czochralski silicon monocrystal reactors and the method thereof of filling continuously.
Background technology
The composition of czochralski silicon monocrystal reactors is as shown in Figure 1, mainly is made up of four parts:
(1) body of heater: comprise quartz crucible 7, plumbago crucible 8 (being used for supporting quartz crucible), well heater 9 and thermally-insulated body 10, body of heater 16, stay-warm case 20; The parts of these influence heat transfers and temperature distribution in the body of heater 16; Be commonly referred to as thermal field; Thermal field generally characterizes with used quartz crucible external diameter; Quartz crucible generally representes with its external diameter, the quartz crucible that has 18 inches, 20 inches, 22 inches, 24 inches, 28 inches, 32 inches commonly used now, and corresponding thermal field size is respectively 18 inches, 20 inches, 22 inches, 24 inches, 28 inches, 32 inches a thermal field;
(2) monocrystalline promotes rotating mechanism: comprise chuck 5, wireline 3 and lift 1; Lift 1 and drive monocrystalline 17 rotations and up-downs through wireline 3, chuck 5, seed crystal 6;
(3) the crucible lifting rotating mechanism 12, drive quartz crucible 7, plumbago crucible 8, silicon melt 18 rotations and up-down;
(4) atmosphere and pressure control system: comprise argon flow amount control, vacuum system and pressure automatically controlled valve;
(5) growth control system: comprise heating transformer 14, computer control system 15, furnace body temperature probe 19, diameter control probe 22.
Usually select quartz crucible for use according to the size and the length of the diameter of the silicon single-crystal of being grown.。
Will be during crystal growth with filling polysilicon in the quartz crucible; Vacuumize; Temperature in the stove being elevated to 1500-1600 ℃ for well heater 9 energisings all melts polysilicon; The acting in conjunction of controlled temperature through heating transformer 14, computer control system 15, furnace body temperature probe 19 is stabilized to melt temperature in the scope of the above 10-30 C of melting temperature of silicon; Lift 1 and transfer wireline 3, chuck 5 and crystal seed 6 up to crystal seed and melt welding; Making silicon single-crystal through heat transformer 14, computer control system 15, furnace body temperature probe 19, crucible lifting rotating mechanism 12, the temperature, pull rate, the crucible lift velocity that lift an acting in conjunction control melt of 1 after the welding is to grow up and behind aimed dia, begin isodiametric growth in the center with the crystal seed; Beginning crystal afterbody growth after surplus material reaches prescribed value, monocrystalline broke away from a small amount of melt of residue after the afterbody growth was accomplished, and crystal growing process finishes.Stove is cooled to open stove taking-up monocrystalline behind the normal temperature.Change quartz crucible and restart next silicon monocrystal growth process.
Use present method, the bigger and longer monocrystalline of length of growth diameter need use larger sized quartz crucible, bigger body of heater size, larger sized thermal field.The volume of the monocrystalline of growth is determined that by charge the process of crystal growth must be a frequent heating process of cooling.Because of the body of heater size is big, the process of crystal growth is a frequent heating process of cooling; Use the energy consumption of present czochralski silicon monocrystal growth method big, efficient is low; The power consumption of producing the per kilogram silicon single-crystal is 4-5 a times of zone melting method, and platform machine output is 1/3rd of zone melting method.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, a kind of silicon melt the czochralski silicon monocrystal reactors and the method thereof of filling continuously are provided.
A kind of silicon melt czochralski silicon monocrystal growth reactors of filling continuously is: reactors body left side is provided with in order from top to bottom and lifts head, secondary furnace chamber, segregaion valve, bell, body of heater, electrode, crucible lifting rotating mechanism; Segregaion valve is installed in the top of bell, and secondary furnace chamber is installed in the top of segregaion valve, lifts the top that head is installed in secondary furnace chamber; Bell covers on body of heater; The bottom thermally-insulated body is installed in the bottom of body of heater, and thermally-insulated body, top stay-warm case upwards are installed from the bottom in the body of heater in order, well heater is installed passing on the electrode of bottom of furnace body; In the space that bottom thermally-insulated body, well heater, top stay-warm case surround, plumbago crucible is installed; Crucible is installed in plumbago crucible, in crucible, is installed in the crucible and encircle, the bottom support that the weight of ring is passed body of heater by the crucible lifting rotating mechanism that is installed in the bottom of furnace body below in silicon melt in plumbago crucible, crucible and the crucible and the crucible; Ring, well heater are coaxial arrangement in secondary furnace chamber, plumbago crucible, crucible, the crucible; The axis of the relative body of heater of axis of ring, well heater squints left in secondary furnace chamber, plumbago crucible, crucible, the crucible, and body of heater, thermally-insulated body, well heater are cylindrical, and laser liquid surface position sensor, diameter control probe are installed in the top of bell; The furnace body temperature probe is installed at the side wall of furnace middle part, lifts 1 lower end and is provided with wireline, chuck; The port tube is installed in the top of the bell on reactors body right side; Be shaped as round shape; Segregaion valve, reinforced and weighing device upwards are installed above the lid of port tube in order, are added feed bin, add the silica glass cover is installed in the feed bin, dress polysilicon in the silica glass cover; Top in the port tube is installed thermally-insulated body, well heater, continuous melting pipe from outside to inside in order; Thermopair passes the sidewall of port tube and the middle part of thermally-insulated body is inserted between thermally-insulated body and the well heater, at the bottom of port tube, the upper right quarter of body of heater and the upper right quarter of crucible, thermally-insulated body, well heater, the stable pipe of melt temperature is installed in order from outside to inside; The middle part that thermopair passes top-right sidewall of body of heater and thermally-insulated body is inserted between well heater and the thermally-insulated body; Support is installed on the thermally-insulated body, and continuous melting pipe, thermally-insulated body are rack-mount, and it is coaxial to add feed bin, thermally-insulated body, well heater, continuous melting pipe, thermally-insulated body, well heater, the stable pipe of melt temperature; And perpendicular to horizontal direction, the electrode of below the bottom of right side of body of heater, installing passes the bottom of body of heater with electrode and the right of body of heater links to each other with well heater with well heater respectively; Three groups of heating transformers link to each other through heating cables with electrode, electrode, electrode respectively, system and heating transformer, diameter control probe, laser liquid surface position sensor, furnace body temperature probe, thermopair, thermopair, lift head, feeding in raw material is connected through umbilical cable with weighing device.
A kind of silicon melt czochralski silicon monocrystal growth reactors of filling continuously is: reactors body left side is provided with in order from top to bottom and lifts head, secondary furnace chamber, segregaion valve, bell, body of heater, electrode, crucible lifting rotating mechanism; Segregaion valve is installed in the top of bell, and secondary furnace chamber is installed in the top of segregaion valve, lifts the top that head is installed in secondary furnace chamber; Bell covers on body of heater; The bottom thermally-insulated body is installed in the bottom of body of heater, and thermally-insulated body, top stay-warm case upwards are installed from the bottom in the body of heater in order, well heater is installed passing on the electrode of bottom of furnace body; In the space that bottom thermally-insulated body, well heater, top stay-warm case surround, plumbago crucible is installed; Crucible is installed in plumbago crucible, in crucible, is installed in the crucible and encircle, the bottom support that the weight of ring is passed body of heater by the crucible lifting rotating mechanism that is installed in the bottom of furnace body below in silicon melt in plumbago crucible, crucible and the crucible and the crucible; Ring, well heater are coaxial arrangement in secondary furnace chamber, plumbago crucible, crucible, the crucible; The axis of the relative body of heater of axis of ring, well heater squints left in secondary furnace chamber, plumbago crucible, crucible, the crucible, and body of heater, thermally-insulated body, well heater are cylindrical, and laser liquid surface position sensor, diameter control probe are installed in the top of bell; The furnace body temperature probe is installed at the side wall of furnace middle part, lifts a lower end and is provided with wireline, chuck; The top of the bell on reactors body right side is upwards installed segregaion valve, reinforced and weighing device in order, is added feed bin; Add the silica glass cover is installed in the feed bin; The position of the adjacent bell in stove intravital upper right quarter zone; Thermally-insulated body, well heater, continuous melting pipe are installed from outside to inside in order, and thermopair passes the furnace wall of body of heater and the middle part of thermally-insulated body is inserted between thermally-insulated body and the well heater, in the right upper portion of crucible and the lower left of continuous melting pipe; Thermally-insulated body, well heater, the stable pipe of melt temperature are installed from outside to inside in order; Furnace wall and thermally-insulated body that thermopair passes body of heater the right middle part are inserted between well heater and the thermally-insulated body, and the continuous melting pipe is by the bottom support of thermally-insulated body, add feed bin, thermally-insulated body, well heater, the continuous melting pipe is coaxial and axis normal in horizontal direction; The axis of thermally-insulated body, well heater, the stable pipe of melt temperature is a horizontal direction, and the electrode of below the bottom of right side of body of heater, installing passes the bottom of body of heater with electrode and the right side of body of heater links to each other with well heater with well heater respectively; Three groups of heating transformers link to each other through heating cables with electrode, electrode, electrode respectively, system and heating transformer, diameter control probe, laser liquid surface position sensor, furnace body temperature probe, thermopair, thermopair, lift head, feeding in raw material is connected through umbilical cable with weighing device.
A kind of silicon melt czochralski silicon monocrystal growth reactors of filling continuously is: reactors body left side is provided with in order from top to bottom and lifts head, secondary furnace chamber, segregaion valve, bell, body of heater, electrode, crucible lifting rotating mechanism; Segregaion valve is installed in the top of bell, and secondary furnace chamber is installed in the top of segregaion valve, lifts the top that head is installed in secondary furnace chamber; Bell covers on body of heater; The bottom thermally-insulated body is installed in the bottom of body of heater, and thermally-insulated body, top stay-warm case upwards are installed from the bottom in the body of heater in order, well heater is installed passing on the electrode of bottom of furnace body; In the space that bottom thermally-insulated body, well heater, top stay-warm case surround, plumbago crucible is installed; Crucible is installed in plumbago crucible, in crucible, is installed in the crucible and encircle, the bottom support that the weight of ring is passed body of heater by the crucible lifting rotating mechanism that is installed in the bottom of furnace body below in silicon melt in plumbago crucible, crucible and the crucible and the crucible; Ring, well heater are coaxial arrangement in secondary furnace chamber, plumbago crucible, crucible, the crucible; The axis of the relative body of heater of axis of ring, well heater squints left in secondary furnace chamber, plumbago crucible, crucible, the crucible, and body of heater, thermally-insulated body, well heater are cylindrical, and laser liquid surface position sensor, diameter control probe are installed in the top of bell; The furnace body temperature probe is installed at the side wall of furnace middle part, lifts a lower end and is provided with wireline, chuck; The top of the bell on reactors body right side is upwards installed segregaion valve, reinforced and weighing device in order, is added feed bin; Add the silica glass cover is installed in the feed bin; In the right upper portion of crucible and the position of the adjacent bell of the intravital upper right quarter of stove; Thermally-insulated body, well heater, continuous melting pipe are installed from outside to inside in order, and thermopair passes the furnace wall of body of heater and the middle and lower part of thermally-insulated body is inserted between thermally-insulated body and the well heater, and the continuous melting pipe is by the bottom support of thermally-insulated body.Thermally-insulated body, well heater, continuous melting pipe, add feed bin axis normal in horizontal direction.The electrode of below the bottom of right side of body of heater, installing passes the bottom of body of heater and the right side of body of heater links to each other with well heater; Three groups of heating transformers link to each other through heating cables with electrode, electrode, electrode respectively, system and heating transformer, diameter control probe, laser liquid surface position sensor, furnace body temperature probe, thermopair, thermopair, lift head, feeding in raw material is connected through umbilical cable with weighing device.
A kind of silicon melt czochralski silicon monocrystal growth reactors of filling continuously is: reactors body left side is provided with in order from top to bottom and lifts head, secondary furnace chamber, segregaion valve, bell, body of heater, electrode, crucible lifting rotating mechanism; Segregaion valve is installed in the top of bell, and secondary furnace chamber is installed in the top of segregaion valve, lifts the top that head is installed in secondary furnace chamber; Bell covers on body of heater; The bottom thermally-insulated body is installed in the bottom of body of heater, and thermally-insulated body, top stay-warm case upwards are installed from the bottom in the body of heater in order, well heater is installed passing on the electrode of bottom of furnace body; In the space that bottom thermally-insulated body, well heater, top stay-warm case surround, plumbago crucible is installed; Crucible is installed in plumbago crucible, in crucible, is installed in the crucible and encircle, the bottom support that the weight of ring is passed body of heater by the crucible lifting rotating mechanism that is installed in the bottom of furnace body below in silicon melt in plumbago crucible, crucible and the crucible and the crucible; Ring, well heater are coaxial arrangement in secondary furnace chamber, plumbago crucible, crucible, the crucible; The axis of the relative body of heater of axis of ring, well heater squints left in secondary furnace chamber, plumbago crucible, crucible, the crucible, and body of heater, thermally-insulated body, well heater are cylindrical, and laser liquid surface position sensor, diameter control probe are installed in the top of bell; The furnace body temperature probe is installed at the side wall of furnace middle part, lifts a lower end and is provided with wireline, chuck; Independently port tube is installed in the top of the bell on reactors body right side; Be shaped as round shape, move, segregaion valve upwards is installed above the lid of port tube is in order fed in raw material with weighing device, add feed bin with bell; Add the silica glass cover is installed in the feed bin, dress polysilicon in the silica glass cover.Upper area in the port tube is installed thermally-insulated body, well heater, continuous melting pipe from outside to inside in order; Thermopair passes the furnace wall of port tube and the middle part of thermally-insulated body is inserted between thermally-insulated body and the well heater; Thermally-insulated body, well heater, the stable pipe of melt temperature are installed in the bottom of port tube from outside to inside in order; Thermopair passes the furnace wall of port tube bottom and the middle part of thermally-insulated body is inserted between well heater and the thermally-insulated body; Support is installed on the thermally-insulated body, and continuous melting pipe, thermally-insulated body are rack-mount, and it is coaxial to add feed bin, thermally-insulated body, well heater, continuous melting pipe, thermally-insulated body, well heater, the stable pipe of melt temperature; Axis normal is in horizontal direction; Middle part, the right at the port tube links to each other with well heater with well heater with the furnace wall that electrode passes the port tube with the electrode that install the bottom, opens bottom and the bell that diameter 50-100mm small through hole connects the port tube in the bottom left of port tube, and fluid tube is installed in small through hole; Three groups of heating transformers link to each other through heating cables with electrode, electrode, electrode respectively, system and heating transformer, diameter control probe, laser liquid surface position sensor, furnace body temperature probe, thermopair, thermopair, lift head, feeding in raw material is connected through umbilical cable with weighing device.
The silicon melt continuously czochralski silicon monocrystal growth method of filling is: will add with weighing device through reinforced that polysilicon is filled into polysilicon continuous melting pipe continuously or off and in the feed bin; Flow in the stable pipe of melt temperature by the flow liquid mouth behind the unmelted polycrystalline silicon of continuous melting pipe; In the flow process of silicon melt in the stable pipe of melt temperature; Temperature is stabilized in the above 30-50 of fusing point ℃ the scope of silicon; Be injected in the crucible in the silicon melt injection region between the wall of ring and crucible by the flow liquid mouth then; The temperature of the silicon melt that injects once more by stable and adjustment, is continuously lifted into silicon single-crystal in silicon melt encircles in the injection region in crucible, the dog-hole bottom the silicon melt in the injection region encircles in crucible gets in the crucible and encircles; Silicon melt is only accomplished the whole process of injecting crucible under the effect of self gravitation, be installed in the variation of the liquid level position of the omnidistance Monitoring and Controlling silicon melt of laser liquid surface position sensor on the bell.
The present invention can effectively reduce quartz crucible, thermal field and the body of heater size that the unidimensional silicon single-crystal of growth uses, and uses undersized crucible, thermal field and the body of heater size large diameter long monocrystalline of growing.The process that makes silicon monocrystal growth no longer is a heating process of cooling that needs are frequent, and extended to 20-30 days or more from present 2-4 days adjacent pitch time of opening stove for twice.A kind of silicon melt provided by the invention is the czochralski silicon monocrystal growth method and the reactors thereof of filling continuously, can effectively reduce the energy consumption of czochralski silicon monocrystal growth method, has improved production efficiency, reaches the level identical with zone melting method.The consumption that czochralski silicon monocrystal growth method that a kind of silicon melt provided by the invention is annotated continuously and reactors thereof can also effectively reduce crucible and thermal field.
The present invention can use undersized thermal field and the crucible large diameter long monocrystalline of growing; Use silicon nitride ceramics, silicon carbide ceramics crucible to replace quartz crucible to become possibility when making the vertical pulling silicon crystal growth; The use of silicon nitride ceramics and silicon carbide ceramics crucible; Can be extended to more than 30 days the pitch time of opening stove for adjacent twice, further reduce the consumption of crucible and thermal field.
Czochralski silicon monocrystal reactors that a kind of silicon melt provided by the invention is annotated continuously and method thereof are because of using small size quartz crucible, silicon nitride ceramics, silicon carbide ceramics crucible; Can effectively reduce the oxygen concn in the czochralski silicon monocrystal, make the oxygen concn of czochralski silicon monocrystal be reduced to the level of zone-melted silicon single crystal.
Description of drawings
Fig. 1 is a czochralski silicon monocrystal reactors structural representation commonly used;
Fig. 2 is the silicon melt czochralski silicon monocrystal reactors I type structural representation of filling continuously;
Fig. 3 is the silicon melt czochralski silicon monocrystal reactors II type structural representation of filling continuously;
Fig. 4 is the silicon melt czochralski silicon monocrystal reactors III type structural representation of filling continuously;
Fig. 5 is the silicon melt czochralski silicon monocrystal reactors IV type structural representation of filling continuously;
Fig. 6 (a) is a center flow liquid formula polysilicon continuous melting pipe front view;
Fig. 6 (b) is a center flow liquid formula polysilicon continuous melting pipe vertical view;
Fig. 7 is side flow liquid formula polysilicon continuous melting pipe or silicon melt temperature-stable pipe sectional view;
Fig. 8 (a) is a silicon melt temperature-stable pipe front view;
Fig. 8 (b) is a silicon melt temperature-stable pipe vertical view;
Fig. 9 is a side flow liquid bent mouth type silicon melt temperature-stable pipe sectional view;
Figure 10 (a) is a cage modle graphite heater front view;
Figure 10 (b) is a cage modle graphite heater vertical view;
Figure 11 (a) is the crucible front view of ring in the band;
Figure 11 (b) is the crucible vertical view of ring in the band;
Figure 12 (a) is the rectangle crucible front view of band partition;
Figure 12 (b) is the rectangle crucible vertical view of band partition;
Among the figure: lift 1; Secondary furnace chamber 2; Wireline 3; Segregaion valve 4; Chuck 5; Crystal seed 6; Crucible 7; Plumbago crucible 8; Well heater 9; Thermally-insulated body 10; Electrode 11; Crucible lifting rotating mechanism 12; Bottom thermally-insulated body 13; Heating transformer 14; System 15; Body of heater 16; Monocrystalline 17; Silicon melt 18; Furnace body temperature probe 19; Top stay-warm case 20; Bell 21; Diameter control probe 22; Laser liquid surface position sensor 23; Electrode 24; Ring 25 in the crucible; Electrode 26; Thermopair 27; Thermally-insulated body 28; Well heater 29; The stable pipe 30 of melt temperature; Support 31; Thermopair 32; Polysilicon 33; Well heater 34; Continuous melting pipe 35; Port tube 36; Thermally-insulated body 37; Segregaion valve 38; Feed in raw material and weighing device 39; Add feed bin 40; Silica glass cover 41; Polysilicon 42; The stable pipe 43 of melt temperature; Continuous melting pipe 44; Continuous melting pipe 45; Body 46; Flow liquid mouth 47; Body 48; Flow liquid mouth 49; Body 50; Flow liquid mouth 51; Body 52; Flow liquid mouth 53; Fluid tube 54; Dog-hole 55; Melt injection region 56; Single crystal growing district 57; Partition 58; Dog-hole 59; Single crystal growing district 60; Melt injection region 61.
Embodiment
As shown in Figure 2; The silicon melt continuously czochralski silicon monocrystal growth reactors I type of filling is: reactors body left side is provided with in order from top to bottom and lifts 1, secondary furnace chamber 2, segregaion valve 4, bell 21, body of heater 16, electrode 11, crucible lifting rotating mechanism 12; Segregaion valve 4 is installed in the top of bell 21, and secondary furnace chamber 2 is installed in the top of segregaion valve 4, lift 1 be installed in secondary furnace chamber 2 the top; Bell 21 covers on body of heater 16; Bottom thermally-insulated body 13 is installed in the bottom of body of heater 16, upwards thermally-insulated body 10, top stay-warm case 20 is installed in order from the bottom in the body of heater 16, and well heater 9 is installed on the electrode 11 that passes body of heater 16 bottoms; Plumbago crucible 8 is installed in the space that bottom thermally-insulated body 13, well heater 9, top stay-warm case 20 surround; Crucible 7 is installed in plumbago crucible 8, in crucible 7, is installed in the crucible and encircle 25, the bottom support that the weight of ring 25 is passed body of heater 16 by the crucible lifting rotating mechanism 12 that is installed in below, body of heater 16 bottoms in silicon melt 18 in plumbago crucible 8, crucible 7 and the crucible 7 and the crucible; Ring 25, well heater 9 are coaxial arrangement in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible; The axis of the relative body of heater 16 of axis of ring 25, well heater 9 squints left in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible, and body of heater 16, thermally-insulated body 10, well heater 9 are cylindrical, and laser liquid surface position sensor 23, diameter control probe 22 are installed in the top of bell 21; Furnace body temperature probe 19 is installed at the sidewall middle part of body of heater 16, lifts 1 lower end and is provided with wireline 3, chuck 5; Port tube 36 is installed in the top of the bell 21 on reactors body right side; Be shaped as round shape; Segregaion valve 38, reinforced and weighing device 39 upwards are installed above the lid of port tube 36 in order, are added feed bin 40; Add silica glass cover 41 is installed in the feed bin 40; Dress polysilicon 42 in the silica glass cover 41, the top in the port tube 36 is installed thermally-insulated body 37, well heater 34, continuous melting pipe 35 from outside to inside in order, and thermopair 32 passes the sidewall of port tube 36 and the middle part of thermally-insulated body 37 is inserted between thermally-insulated body 37 and the well heater 34; At the bottom of port tube 36, the upper right quarter of body of heater 16 and the upper right quarter of crucible 7; Thermally-insulated body 28, well heater 29, the stable pipe 30 of melt temperature are installed from outside to inside in order, and the middle part that thermopair 27 passes body of heater 16 top-right sidewalls and thermally-insulated body 28 is inserted between well heater 29 and the thermally-insulated body 28, and support 31 is installed on the thermally-insulated body 28; Continuous melting pipe 35, thermally-insulated body 37 are installed on the support 31; It is coaxial to add the stable pipe of feed bin 40, thermally-insulated body 37, well heater 34, continuous melting pipe 35, thermally-insulated body 28, well heater 29, melt temperature 30, and perpendicular to horizontal direction, the electrode of below the bottom of right side of body of heater 16, installing 24 passes the bottom of body of heater 16 with electrode 26 and the right of body of heater 16 links to each other with well heater 29 with well heater 34 respectively; Three groups of heating transformers 14 link to each other through heating cables with electrode 11, electrode 26, electrode 24 respectively, system 15 and heating transformer 14, diameter control probe 22, laser liquid surface position sensor 23, furnace body temperature probe 19, thermopair 32, thermopair 27, lift 1, reinforced and weighing device 39 be connected through umbilical cable.
Add polysilicon 42 that feed bin can annotate for grain silicon or granularity less than 20 chunk polysilicon; Reinforced and weighing device 39 are established in the bottom that adds feed bin 40; Segregaion valve 38 is when adding the vacuum of isolating body of heater 16 when feed bin replenishes polysilicon 42, to use, and segregaion valve 38 can be selected ball valve, horizontal portable segregaion valve for use or spin upside down the formula segregaion valve according to the particle size of polysilicon.
The unmelted polycrystalline silicon district is made up of the continuous melting pipe 35 of polysilicon, well heater 34, thermally-insulated body 37, thermopair 32 etc., realizes the continuous adding and the continuous melting of polysilicon 33.The continuous melting pipe 35 of polysilicon is a flow liquid formula polysilicon continuous melting pipe in center shown in Figure 6; Material is silica glass, silicon nitride ceramics or silicon carbide ceramics, is made up of body 46 and flow liquid mouth 47, and the D outer diameter 2 of flow liquid mouth 47 is 20-30mm; The inside diameter D 3 of gathering above is the circular hole of 1mm; The length H1 of body 46 is about 150-300mm, and D outer diameter 1 is about 100-150mm, and the wall thickness of body 46 and flow liquid mouth 47 is about 10mm.Well heater 34 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 1 about 20-30mm of body 46.Thermally-insulated body 37 is the graphite lagging material.The unmelted polycrystalline silicon district realizes the continuous adding and the continuous melting of polysilicon.
The melt temperature stable region is stablized pipe 30, well heater 29, thermally-insulated body 28, thermopair 27 etc. by melt temperature and is constituted; It is as shown in Figure 7 that melt temperature is stablized pipe 30; Material is silica glass, silicon nitride ceramics or silicon carbide ceramics, and flow liquid mouth 49 D outer diameter 5 are about 20-30mm, and length L 1 is about 200-300mm; Body 48 D outer diameter 4 are about 100-150mm, and length H4 is about 150-300mm.Well heater 29 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 4 about 20-30mm of body 48.Thermally-insulated body 28 is the graphite lagging material.The stable pipe 30 of melt temperature can make the melt injection region 56 of inflow silicon melt wherein in temperature-stable flows into the crucible 7 of crystal growth behind the target temperature again.
For the influence of the silicon melt that reduce to flow into to the silicon single-crystal 17 of growing, crucible 7 in, install in the crucible and encircle 25, encircle in the crucible 25 can stop inflow silicon melt to the direct impact of the silicon single-crystal 17 of growing.In the crucible ring 25 can welding in the bottom of crucible 7, also can be placed on the middle part of crucible 7 symmetrically.Dog-hole 55 is left in the bottom of ring 25 in the crucible, and dog-hole is the passage that silicon melt flows into ring in the crucible.Crucible 7 is seen Figure 11 with the shape of the interior ring 25 of crucible.
The heating transformer of stove is made up of three parts, to well heater 9, well heater 34, well heater 29, heating power supply is provided respectively, and its function is respectively to keep the silicon melt temperature of the temperature of single crystal growing, continuous melting polysilicon and steady and continuous filling.
The variation of the liquid level position of laser liquid surface position sensor 23 omnidistance monitoring silicon melts 18 is installed on bell; When liquid level rises; System 15 control crucible lifting rotating mechanisms 12 reduce crucible 7 positions; Control heating transformer 14 reduces the power of well heater 34, reduces the speed of polysilicon 33 fusings of continuous melting pipe 35, reduces the additional speed of silicon melt.When liquid level descends, the position of system 15 control crucible lifting rotating mechanisms 12 rising crucibles 7, control heating transformer 14 increases well heater 34 power, increases the speed of polysilicon 33 fusings of continuous melting pipe 35, increases the magnitude of recruitment of silicon melt.
Crucible 7 can be not coaxial to reduce the internal diameter of body of heater 16 with body of heater 16 with secondary furnace chamber 2, and body of heater is a round shape.
Continuously the glide path of the silicon material of filling is to add the melt injection region 56 in the stable pipe of feed bin 40, continuous melting pipe 35, melt temperature 30, the crucible 7, the single crystal growing district 57 in the crucible 7
As shown in Figure 3; The silicon melt continuously czochralski silicon monocrystal growth reactors II type of filling is: reactors body left side is provided with in order from top to bottom and lifts 1, secondary furnace chamber 2, segregaion valve 4, bell 21, body of heater 16, electrode 11, crucible lifting rotating mechanism 12; Segregaion valve 4 is installed in the top of bell 21, and secondary furnace chamber 2 is installed in the top of segregaion valve 4, lift 1 be installed in secondary furnace chamber 2 the top; Bell 21 covers on body of heater 16; Bottom thermally-insulated body 13 is installed in the bottom of body of heater 16, upwards thermally-insulated body 10, top stay-warm case 20 is installed in order from the bottom in the body of heater 16, and well heater 9 is installed on the electrode 11 that passes body of heater 16 bottoms; Plumbago crucible 8 is installed in the space that bottom thermally-insulated body 13, well heater 9, top stay-warm case 20 surround; Crucible 7 is installed in plumbago crucible 8, in crucible 7, is installed in the crucible and encircle 25, the bottom support that the weight of ring 25 is passed body of heater 16 by the crucible lifting rotating mechanism 12 that is installed in below, body of heater 16 bottoms in silicon melt 18 in plumbago crucible 8, crucible 7 and the crucible 7 and the crucible; Ring 25, well heater 9 are coaxial arrangement in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible; The axis of the relative body of heater 16 of axis of ring 25, well heater 9 squints left in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible, and body of heater 16, thermally-insulated body 10, well heater 9 are cylindrical, and laser liquid surface position sensor 23, diameter control probe 22 are installed in the top of bell 21; Furnace body temperature probe 19 is installed at the sidewall middle part of body of heater 16, lifts 1 lower end and is provided with wireline 3, chuck 5; The top of the bell 21 on reactors body right side is upwards installed segregaion valve 38, reinforced and weighing device 39 in order, is added feed bin 40; Add silica glass cover 41 is installed in the feed bin 40; The position of the adjacent bell in upper right quarter zone in the body of heater 16; Thermally-insulated body 37, well heater 34, continuous melting pipe 44 are installed from outside to inside in order; Thermopair 32 passes the furnace wall of body of heater 16 and the middle part of thermally-insulated body 37 is inserted between thermally-insulated body 37 and the well heater 34; In the right upper portion of crucible 7 and the lower left of continuous melting pipe 44, thermally-insulated body 28, well heater 29, the stable pipe 43 of melt temperature are installed from outside to inside in order, furnace wall and thermally-insulated body 28 that thermopair 27 passes middle part, body of heater 16 the right are inserted between well heater 29 and the thermally-insulated body 28; Continuous melting pipe 44 is by the bottom support of thermally-insulated body 37; Add the coaxial and axis normal of feed bin 40, thermally-insulated body 37, well heater 34, continuous melting pipe 44 in horizontal direction, the axis of thermally-insulated body 28, well heater 29, the stable pipe 43 of melt temperature is a horizontal direction, and the electrode of below the bottom of right side of body of heater 16, installing 24 passes the bottom of body of heater 16 with electrode 26 and the right side of body of heater 16 links to each other with well heater 29 with well heater 34 respectively; Three groups of heating transformers 14 link to each other through heating cables with electrode 11, electrode 26, electrode 24 respectively, system 15 and heating transformer 14, diameter control probe 22, laser liquid surface position sensor 23, furnace body temperature probe 19, thermopair 32, thermopair 27, lift 1, reinforced and weighing device 39 be connected through umbilical cable.
The unmelted polycrystalline silicon district is made up of the continuous melting pipe 44 of polysilicon, well heater 34, thermally-insulated body 37, thermopair 32 etc., realizes the continuous adding and the continuous melting of polysilicon 33.The continuous melting pipe 44 of polysilicon is a silicon melt temperature-stable pipe shown in Figure 7; Material is silica glass, silicon nitride ceramics or silicon carbide ceramics; Flow liquid mouth 49 D outer diameter 5 are about 20-30mm, and length L 1 is about 200-300mm, and body 48 D outer diameter 4 are about 100-150mm; Length H4 is about 150-300mm, the about 10mm of wall thickness.Well heater 34 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 4 about 20-30mm of body 48.Thermally-insulated body 37 is the graphite lagging material.The unmelted polycrystalline silicon district realizes the continuous adding and the continuous melting of polysilicon.
The melt temperature stable region is stablized pipe 43, well heater 29, thermally-insulated body 28, thermopair 27 etc. by melt temperature and is constituted; The stable pipe of melt temperature 43 is as shown in Figure 8, and flow liquid mouth 51 D outer diameter 7 are about 20-30mm, and body 50 D outer diameter 6 are about 50-100mm; Length H6 is about 100-150mm, the about 10mm of wall thickness.Well heater 29 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 6 about 20-30mm of body 50.Thermally-insulated body 28 is the graphite lagging material.The stable pipe 43 of melt temperature can make inflow silicon melt wherein flow into the melt injection region 56 of the crucible 7 of crystal growth behind the target temperature again at temperature-stable.
As shown in Figure 4; The silicon melt continuously czochralski silicon monocrystal growth reactors III type of filling is: reactors body left side is provided with in order from top to bottom and lifts 1, secondary furnace chamber 2, segregaion valve 4, bell 21, body of heater 16, electrode 11, crucible lifting rotating mechanism 12; Segregaion valve 4 is installed in the top of bell 21, and secondary furnace chamber 2 is installed in the top of segregaion valve 4, lift 1 be installed in secondary furnace chamber 2 the top; Bell 21 covers on body of heater 16; Bottom thermally-insulated body 13 is installed in the bottom of body of heater 16, upwards thermally-insulated body 10, top stay-warm case 20 is installed in order from the bottom in the body of heater 16, and well heater 9 is installed on the electrode 11 that passes body of heater 16 bottoms; Plumbago crucible 8 is installed in the space that bottom thermally-insulated body 13, well heater 9, top stay-warm case 20 surround; Crucible 7 is installed in plumbago crucible 8, in crucible 7, is installed in the crucible and encircle 25, the bottom support that the weight of ring 25 is passed body of heater 16 by the crucible lifting rotating mechanism 12 that is installed in below, body of heater 16 bottoms in silicon melt 18 in plumbago crucible 8, crucible 7 and the crucible 7 and the crucible; Ring 25, well heater 9 are coaxial arrangement in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible; The axis of the relative body of heater 16 of axis of ring 25, well heater 9 squints left in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible, and body of heater 16, thermally-insulated body 10, well heater 9 are cylindrical, and laser liquid surface position sensor 23, diameter control probe 22 are installed in the top of bell 21; Furnace body temperature probe 19 is installed at the sidewall middle part of body of heater 16, lifts 1 lower end and is provided with wireline 3, chuck 5; The top of the bell 21 on reactors body right side is upwards installed segregaion valve 38, reinforced and weighing device 39 in order, is added feed bin 40; Add silica glass cover 41 is installed in the feed bin 40; In the right upper portion of crucible 7 and the position of the adjacent bell of upper right quarter in the body of heater 16; Thermally-insulated body 37, well heater 34, continuous melting pipe 44 are installed from outside to inside in order; Thermopair 32 passes the furnace wall of body of heater 16 and the middle and lower part of thermally-insulated body 37 is inserted between thermally-insulated body 37 and the well heater 34, and continuous melting pipe 44 is by the bottom support of thermally-insulated body 37.Thermally-insulated body 37, well heater 34, continuous melting pipe 44, add feed bin 40 axis normal in horizontal direction.The electrode of below the bottom of right side of body of heater 16, installing 24 passes the bottom of body of heater 16 and the right side of body of heater 16 links to each other with well heater 34; Three groups of heating transformers 14 link to each other through heating cables with electrode 11, electrode 26, electrode 24 respectively, system 15 and heating transformer 14, diameter control probe 22, laser liquid surface position sensor 23, furnace body temperature probe 19, thermopair 32, thermopair 27, lift 1, reinforced and weighing device 39 be connected through umbilical cable.
The unmelted polycrystalline silicon district is made up of the continuous melting pipe 44 of polysilicon, well heater 34, thermally-insulated body 37, thermopair 32 etc., realizes the continuous adding and the continuous melting of polysilicon 33.The continuous melting pipe 44 of polysilicon is a silicon melt temperature-stable pipe shown in Figure 7; Material is silica glass, silicon nitride ceramics or silicon carbide ceramics; Flow liquid mouth 49 D outer diameter 5 are about 20-30mm, and length L 1 is about 200-300mm, and body 48 D outer diameter 4 are about 100-150mm; Length H4 is about 150-300mm, the about 10mm of wall thickness.Well heater 34 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 4 about 20-30mm of body 48.Thermally-insulated body 37 is the graphite lagging material.The unmelted polycrystalline silicon district realizes the continuous adding and the continuous melting of polysilicon.
Silicon melt is directly from melt injection region 56. that the flow liquid mouth 49 of the continuous melting pipe 44 of polysilicon flows in the crucibles 7
As shown in Figure 5; The silicon melt continuously czochralski silicon monocrystal growth reactors IV type of filling is: reactors body left side is provided with in order from top to bottom and lifts 1, secondary furnace chamber 2, segregaion valve 4, bell 21, body of heater 16, electrode 11, crucible lifting rotating mechanism 12; Segregaion valve 4 is installed in the top of bell 21, and secondary furnace chamber 2 is installed in the top of segregaion valve 4, lift 1 be installed in secondary furnace chamber 2 the top; Bell 21 covers on body of heater 16; Bottom thermally-insulated body 13 is installed in the bottom of body of heater 16, upwards thermally-insulated body 10, top stay-warm case 20 is installed in order from the bottom in the body of heater 16, and well heater 9 is installed on the electrode 11 that passes body of heater 16 bottoms; Plumbago crucible 8 is installed in the space that bottom thermally-insulated body 13, well heater 9, top stay-warm case 20 surround; Crucible 7 is installed in plumbago crucible 8, in crucible 7, is installed in the crucible and encircle 25, the bottom support that the weight of ring 25 is passed body of heater 16 by the crucible lifting rotating mechanism 12 that is installed in below, body of heater 16 bottoms in silicon melt 18 in plumbago crucible 8, crucible 7 and the crucible 7 and the crucible; Ring 25, well heater 9 are coaxial arrangement in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible; The axis of the relative body of heater 16 of axis of ring 25, well heater 9 squints left in secondary furnace chamber 2, plumbago crucible 8, crucible 7, the crucible, and body of heater 16, thermally-insulated body 10, well heater 9 are cylindrical, and laser liquid surface position sensor 23, diameter control probe 22 are installed in the top of bell 21; Furnace body temperature probe 19 is installed at the sidewall middle part of body of heater 16, lifts 1 lower end and is provided with wireline 3, chuck 5; Independently port tube 36 is installed in the top of the bell 21 on reactors body right side; Be shaped as round shape; Move with bell 21; Segregaion valve 38, reinforced and weighing device 39 upwards are installed above the lid of port tube 36 in order, are added feed bin 40, add silica glasss cover 41 is installed in the feed bin 40, dress polysilicons 42 in the silica glass cover 41.Upper area in the port tube 36 is installed thermally-insulated body 37, well heater 34, continuous melting pipe 35 from outside to inside in order; Thermopair 32 passes the furnace wall of port tube 36 and the middle part of thermally-insulated body 37 is inserted between thermally-insulated body 37 and the well heater 34; Thermally-insulated body 28, well heater 29, the stable pipe 30 of melt temperature are installed in the bottom of port tube 36 from outside to inside in order; Thermopair 27 passes the furnace wall of port tube 36 bottoms and the middle part of thermally-insulated body 28 is inserted between well heater 29 and the thermally-insulated body 28; Support 31 is installed on the thermally-insulated body 28; Continuous melting pipe 35, thermally-insulated body 37 are installed on the support 31; It is coaxial to add the stable pipe of feed bin 40, thermally-insulated body 37, well heater 34, continuous melting pipe 35, thermally-insulated body 28, well heater 29, melt temperature 30, and axis normal links to each other with well heater 29 with well heater 34 with the furnace wall that electrode 26 passes port tube 36 at the middle part, the right of port tube 36 and the electrode 24 of bottom installation in horizontal direction; Open bottom and the bell 21 that diameter 50-100mm small through hole connects port tube 36 in the bottom left of port tube 36, fluid tube 54 is installed in small through hole; Three groups of heating transformers 14 link to each other through heating cables with electrode 11, electrode 26, electrode 24 respectively, system 15 and heating transformer 14, diameter control probe 22, laser liquid surface position sensor 23, furnace body temperature probe 19, thermopair 32, thermopair 27, lift 1, reinforced and weighing device 39 be connected through umbilical cable.
The unmelted polycrystalline silicon district is made up of the continuous melting pipe 35 of polysilicon, well heater 34, thermally-insulated body 37, thermopair 32 etc., realizes the continuous adding and the continuous melting of polysilicon.The continuous melting pipe 35 of polysilicon is a flow liquid formula polysilicon continuous melting pipe in center shown in Figure 6; Material is silica glass, silicon nitride ceramics or silicon carbide ceramics, is made up of body 46 and flow liquid mouth 47, and flow liquid mouth 47 D outer diameter 2 are 20-30mm; The inside diameter D 3 of gathering above is the circular hole of 1mm; The length H1 of body 46 is about 150-300mm, and D outer diameter 1 is about 100-150mm, and the wall thickness of body 46 and flow liquid mouth 47 is about 10mm.Well heater 34 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 1 about 20-30mm of body 46.Thermally-insulated body 37 is the graphite lagging material.The unmelted polycrystalline silicon district realizes the continuous adding and the continuous melting of polysilicon.
The melt temperature stable region is stablized pipe 30, well heater 29, thermally-insulated body 28, thermopair 27 etc. by melt temperature and is constituted; The stable pipe of melt temperature 30 side as shown in Figure 9 flow liquid bent mouth type silicon melt temperature-stable pipes, material is silica glass, silicon nitride ceramics or silicon carbide ceramics, flow liquid mouth 53 D outer diameter 9 are about 20-30mm; Length H9 is about 50-150mm; Body 52 D outer diameter 8 are about 100-150mm, and length H7 is about 150-300mm, the about 10mm of wall thickness.Well heater 34 is a cage structure shown in Figure 10, and material is a graphite, and inside diameter D 10 is than D outer diameter 8 about 20-30mm of body 52.Thermally-insulated body 28 is the graphite lagging material.The stable pipe 30 of melt temperature can make inflow silicon melt wherein flow into the crucible of crystal growth behind the target temperature again at temperature-stable.Silicon melt is from the melt injection region 56. of flow liquid mouth 53 in fluid tube 54 inflow crucibles 7
The silicon melt continuously czochralski silicon monocrystal growth method of filling is: will add with weighing device 39 through reinforced that polysilicon is filled into polysilicon continuous melting pipe 35 continuously or off and in the feed bin 40; Flow in the stable pipe 30 of melt temperature by the flow liquid mouth behind the unmelted polycrystalline silicon of continuous melting pipe 35; In the flow process of silicon melt in the stable pipe 30 of melt temperature; Temperature is stabilized in the above 30-50 of fusing point ℃ the scope of silicon; Be injected in the crucible in the silicon melt injection region 56 between the wall of ring 25 and crucible 7 by the flow liquid mouth then; 56 once more by stable and adjustment, silicon melt encircle in crucible and is lifted into silicon single-crystal 25 in continuously the temperature of the silicon melt that injects in the injection region, and injection region 56 interior silicon melts encircle in crucible in the dog-hole 55 entering crucibles of 25 bottoms and encircle; Silicon melt is only accomplished the whole process of injecting crucible 7 under the effect of self gravitation, be installed in the variation of the liquid level position of the laser liquid surface position sensor 23 omnidistance Monitoring and Controlling silicon melts on the bell 21.
The shape of the crucible 7 that the present invention uses is shown in figure 11, in crucible 7, installs in the crucible and encircles 25.Ring 25 weldings are in the bottom of crucible 7 in the crucible; Crucible by encircle 25 in the crucible, crucible 7, dog-hole 55 etc. constitute; The shape of the crucible that crucible 7 shapes and present czochralski silicon monocrystal reactors are commonly used is identical, and ring 25 be cylindrical in the crucible, encircles 25 the bottom welding bottom at crucible 7 in the crucible; The bottom of ring 25 and the contact position, bottom of crucible 7 are symmetrically distributed with four dog-holes 55 in the crucible, and ring 25 is coaxial with crucible 7 in the crucible.The general 8-12mm of wall thickness of ring 25 and crucible 7 in the crucible, in the crucible outside diameter d of ring 25 be crucible 7 D outer diameter 0.5-0.7 doubly, in the crucible height h1 of ring 25 be generally crucible 7 height h2 0.6-0.8 doubly.Select the size of encircling in crucible and the crucible for use according to the external diameter of the silicon single-crystal of growing during actual the use.The big 20-30 mm of level after the height h1 of ring 25 generally melts than polysilicon fully in the crucible.The diameter phi of dog-hole 55 is generally 10-20mm.
Can use square crucible shown in Figure 12, crucible does not rotate in single crystal growth process yet.Crucible is made up of with melt injection region 61 single crystal growing district 60, in establish partition 58 and dog-hole 59, the shape of thermal field also will be done corresponding variation when using square crucible.
The material of crucible can use silica glass, silicon nitride ceramics or silicon carbide ceramics.
The present invention uses the cage type graphite heater, also can use other shape and material heating device or use high-frequency induction heating.
Below only be concrete application case of the present invention, protection domain of the present invention is not constituted any limitation.All employing equivalent variations or equivalent transformation and the technical scheme that forms all drop within the rights protection scope of the present invention.
Claims (5)
1. the silicon melt czochralski silicon monocrystal reactors of filling continuously; It is characterized in that: reactors body left side is provided with in order from top to bottom and lifts head (1), secondary furnace chamber (2), segregaion valve (4), bell (21), body of heater (16), electrode (11), crucible lifting rotating mechanism (12); Segregaion valve (4) is installed in the top of bell (21); Secondary furnace chamber (2) is installed in the top of segregaion valve (4); Lift head (1) and be installed in the top of secondary furnace chamber (2); Bell (21) covers on body of heater (16); Bottom thermally-insulated body (13) is installed in the bottom of body of heater (16), from the bottom thermally-insulated body (10), top stay-warm case (20) is installed in order upwards in the body of heater (16), goes up at the electrode (11) that passes body of heater (16) bottom well heater (9) is installed; Plumbago crucible (8) is installed in the space that bottom thermally-insulated body (13), well heater (9), top stay-warm case (20) surround; Crucible (7) is installed in plumbago crucible (8), ring (25) in the crucible is installed in crucible (7), the bottom support that the weight of ring (25) is passed body of heater (16) by the crucible lifting rotating mechanism (12) that is installed in below, body of heater (16) bottom in silicon melt (18) in plumbago crucible (8), crucible (7) and the crucible (7) and the crucible; Ring (25), well heater (9) are coaxial arrangement in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible; The axis of the relative body of heater of axis (16) of ring (25), well heater (9) squints left in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible, and body of heater (16), thermally-insulated body (10), well heater (9) are cylindrical, and laser liquid surface position sensor (23), diameter control probe (22) are installed in the top of bell (21); Furnace body temperature probe (19) is installed at the sidewall middle part of body of heater (16), lifts head (1) lower end and is provided with wireline (3), chuck (5); Port tube (36) is installed in the top of the bell (21) on reactors body right side; Be shaped as round shape; In the lid of port tube (36) top segregaion valve (38) is installed in order upwards, feeds in raw material and weighing device (39), added feed bin (40); Add silica glass cover (41) is installed in the feed bin (40); Top in the port tube (36) is installed thermally-insulated body (37), well heater (34), continuous melting pipe (35) from outside to inside in order; Thermopair (32) passes the sidewall of port tube (36) and the middle part of thermally-insulated body (37) is inserted between thermally-insulated body (37) and the well heater (34); At the bottom of port tube (36), the upper right quarter of body of heater (16) and the upper right quarter of crucible (7); Thermally-insulated body (28), well heater (29), the stable pipe of melt temperature (30) are installed from outside to inside in order, and the middle part that thermopair (27) passes top-right sidewall of body of heater (16) and thermally-insulated body (28) is inserted between well heater (29) and the thermally-insulated body (28), and support (31) is installed on the thermally-insulated body (28); Continuous melting pipe (35), thermally-insulated body (37) are installed on the support (31); It is coaxial to add the stable pipe of feed bin (40), thermally-insulated body (37), well heater (34), continuous melting pipe (35), thermally-insulated body (28), well heater (29), melt temperature (30), and perpendicular to horizontal direction, the electrode of installing in the below, bottom, right side of body of heater (16) (24) passes the bottom of body of heater (16) with electrode (26) and the right side of body of heater (16) links to each other with well heater (29) with well heater (34) respectively; Three groups of heating transformers (14) link to each other through heating cables with electrode (11), electrode (26), electrode (24) respectively, system (15) and heating transformer (14), diameter control probe (22), laser liquid surface position sensor (23), furnace body temperature probe (19), thermopair (32), thermopair (27), lift head (1), reinforcedly be connected through umbilical cable with weighing device (39).
2. the silicon melt czochralski silicon monocrystal reactors of filling continuously; It is characterized in that: reactors body left side is provided with in order from top to bottom and lifts head (1), secondary furnace chamber (2), segregaion valve (4), bell (21), body of heater (16), electrode (11), crucible lifting rotating mechanism (12); Segregaion valve (4) is installed in the top of bell (21); Secondary furnace chamber (2) is installed in the top of segregaion valve (4); Lift head (1) and be installed in the top of secondary furnace chamber (2); Bell (21) covers on body of heater (16); Bottom thermally-insulated body (13) is installed in the bottom of body of heater (16), from the bottom thermally-insulated body (10), top stay-warm case (20) is installed in order upwards in the body of heater (16), goes up at the electrode (11) that passes body of heater (16) bottom well heater (9) is installed; Plumbago crucible (8) is installed in the space that bottom thermally-insulated body (13), well heater (9), top stay-warm case (20) surround; Crucible (7) is installed in plumbago crucible (8), ring (25) in the crucible is installed in crucible (7), the bottom support that the weight of ring (25) is passed body of heater (16) by the crucible lifting rotating mechanism (12) that is installed in below, body of heater (16) bottom in silicon melt (18) in plumbago crucible (8), crucible (7) and the crucible (7) and the crucible; Ring (25), well heater (9) are coaxial arrangement in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible; The axis of the relative body of heater of axis (16) of ring (25), well heater (9) squints left in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible, and body of heater (16), thermally-insulated body (10), well heater (9) are cylindrical, and laser liquid surface position sensor (23), diameter control probe (22) are installed in the top of bell (21); Furnace body temperature probe (19) is installed at the sidewall middle part of body of heater (16), lifts head (1) lower end and is provided with wireline (3), chuck (5); The top of the bell (21) on reactors body right side is upwards installed segregaion valve (38), reinforced and weighing device (39) in order, is added feed bin (40); Add silica glass cover (41) is installed in the feed bin (40); The position of the adjacent bell in upper right quarter zone in the body of heater (16); Thermally-insulated body (37), well heater (34), continuous melting pipe (44) are installed from outside to inside in order; Thermopair (32) passes the furnace wall of body of heater (16) and the middle part of thermally-insulated body (37) is inserted between thermally-insulated body (37) and the well heater (34); In the right upper portion of crucible (7) and the lower left of continuous melting pipe (44); Thermally-insulated body (28), well heater (29), the stable pipe of melt temperature (43) are installed from outside to inside in order; Furnace wall and thermally-insulated body (28) that thermopair (27) passes body of heater (16) the right middle part are inserted between well heater (29) and the thermally-insulated body (28), and continuous melting pipe (44) is by the bottom support of thermally-insulated body (37), add feed bin (40), thermally-insulated body (37), well heater (34), continuous melting pipe (44) is coaxial and axis normal in horizontal direction; The axis of thermally-insulated body (28), well heater (29), the stable pipe of melt temperature (43) is a horizontal direction, and the electrode of installing in the bottom of right side below of body of heater (16) (24) passes the bottom of body of heater (16) with electrode (26) and the right side of body of heater (16) links to each other with well heater (29) with well heater (34) respectively; Three groups of heating transformers (14) link to each other through heating cables with electrode (11), electrode (26), electrode (24) respectively, system (15) and heating transformer (14), diameter control probe (22), laser liquid surface position sensor (23), furnace body temperature probe (19), thermopair (32), thermopair (27), lift head (1), reinforcedly be connected through umbilical cable with weighing device (39).
3. the silicon melt czochralski silicon monocrystal reactors of filling continuously; It is characterized in that: reactors body left side is provided with in order from top to bottom and lifts head (1), secondary furnace chamber (2), segregaion valve (4), bell (21), body of heater (16), electrode (11), crucible lifting rotating mechanism (12); Segregaion valve (4) is installed in the top of bell (21); Secondary furnace chamber (2) is installed in the top of segregaion valve (4); Lift head (1) and be installed in the top of secondary furnace chamber (2); Bell (21) covers on body of heater (16); Bottom thermally-insulated body (13) is installed in the bottom of body of heater (16), from the bottom thermally-insulated body (10), top stay-warm case (20) is installed in order upwards in the body of heater (16), goes up at the electrode (11) that passes body of heater (16) bottom well heater (9) is installed; Plumbago crucible (8) is installed in the space that bottom thermally-insulated body (13), well heater (9), top stay-warm case (20) surround; Crucible (7) is installed in plumbago crucible (8), ring (25) in the crucible is installed in crucible (7), the bottom support that the weight of ring (25) is passed body of heater (16) by the crucible lifting rotating mechanism (12) that is installed in below, body of heater (16) bottom in silicon melt (18) in plumbago crucible (8), crucible (7) and the crucible (7) and the crucible; Ring (25), well heater (9) are coaxial arrangement in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible; The axis of the relative body of heater of axis (16) of ring (25), well heater (9) squints left in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible, and body of heater (16), thermally-insulated body (10), well heater (9) are cylindrical, and laser liquid surface position sensor (23), diameter control probe (22) are installed in the top of bell (21); Furnace body temperature probe (19) is installed at the sidewall middle part of body of heater (16), lifts head (1) lower end and is provided with wireline (3), chuck (5); The top of the bell (21) on reactors body right side is upwards installed segregaion valve (38), reinforced and weighing device (39) in order, is added feed bin (40); Add silica glass cover (41) is installed in the feed bin (40); In the right upper portion of crucible (7) and the position of the adjacent bell of upper right quarter in the body of heater (16); Thermally-insulated body (37), well heater (34), continuous melting pipe (44) are installed from outside to inside in order; Thermopair (32) passes the furnace wall of body of heater (16) and the middle and lower part of thermally-insulated body (37) is inserted between thermally-insulated body (37) and the well heater (34); Continuous melting pipe (44) is by the bottom support of thermally-insulated body (37); Thermally-insulated body (37), well heater (34), continuous melting pipe (44), add feed bin (40) axis normal in horizontal direction, the electrode of installing in the bottom of right side below of body of heater (16) (24) passes the bottom of body of heater (16) and the right side of body of heater (16) links to each other with well heater (34); Three groups of heating transformers (14) link to each other through heating cables with electrode (11), electrode (26), electrode (24) respectively, system (15) and heating transformer (14), diameter control probe (22), laser liquid surface position sensor (23), furnace body temperature probe (19), thermopair (32), thermopair (27), lift head (1), reinforcedly be connected through umbilical cable with weighing device (39).
4. the silicon melt czochralski silicon monocrystal reactors of filling continuously; It is characterized in that: reactors body left side is provided with in order from top to bottom and lifts head (1), secondary furnace chamber (2), segregaion valve (4), bell (21), body of heater (16), electrode (11), crucible lifting rotating mechanism (12); Segregaion valve (4) is installed in the top of bell (21); Secondary furnace chamber (2) is installed in the top of segregaion valve (4); Lift head (1) and be installed in the top of secondary furnace chamber (2); Bell (21) covers on body of heater (16); Bottom thermally-insulated body (13) is installed in the bottom of body of heater (16), from the bottom thermally-insulated body (10), top stay-warm case (20) is installed in order upwards in the body of heater (16), goes up at the electrode (11) that passes body of heater (16) bottom well heater (9) is installed; Plumbago crucible (8) is installed in the space that bottom thermally-insulated body (13), well heater (9), top stay-warm case (20) surround; Crucible (7) is installed in plumbago crucible (8), ring (25) in the crucible is installed in crucible (7), the bottom support that the weight of ring (25) is passed body of heater (16) by the crucible lifting rotating mechanism (12) that is installed in below, body of heater (16) bottom in silicon melt (18) in plumbago crucible (8), crucible (7) and the crucible (7) and the crucible; Ring (25), well heater (9) are coaxial arrangement in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible; The axis of the relative body of heater of axis (16) of ring (25), well heater (9) squints left in secondary furnace chamber (2), plumbago crucible (8), crucible (7), the crucible, and body of heater (16), thermally-insulated body (10), well heater (9) are cylindrical, and laser liquid surface position sensor (23), diameter control probe (22) are installed in the top of bell (21); Furnace body temperature probe (19) is installed at the sidewall middle part of body of heater (16), lifts head (1) lower end and is provided with wireline (3), chuck (5); Independently port tube (36) is installed in the top of the bell (21) on reactors body right side; Be shaped as round shape; Move with bell (21); Segregaion valve (38), reinforced and weighing device (39) upwards are installed in the lid of port tube (36) top in order, are added feed bin (40), add silica glass cover (41) is installed in the feed bin (40), adorn polysilicon (42) in the silica glass cover (41); Upper area in the port tube (36) is installed thermally-insulated body (37), well heater (34), continuous melting pipe (35) from outside to inside in order; Thermopair (32) passes the furnace wall of port tube (36) and the middle part of thermally-insulated body (37) is inserted between thermally-insulated body (37) and the well heater (34); Thermally-insulated body (28), well heater (29), the stable pipe of melt temperature (30) are installed in the bottom of port tube (36) from outside to inside in order; Thermopair (27) passes the furnace wall of port tube (36) bottom and the middle part of thermally-insulated body (28) is inserted between well heater (29) and the thermally-insulated body (28); Support (31) is installed in thermally-insulated body (on 28); Continuous melting pipe (35), thermally-insulated body (37) are installed on the support (31); It is coaxial to add the stable pipe of feed bin (40), thermally-insulated body (37), well heater (34), continuous melting pipe (35), thermally-insulated body (28), well heater (29), melt temperature (30); Axis normal is in horizontal direction; Middle part, the right at port tube (36) links to each other with well heater (29) with well heater (34) with the furnace wall that electrode (26) passes port tube (36) with the electrode (24) that install the bottom, opens bottom and the bell (21) that diameter 50-100mm small through hole connects port tube (36) in the bottom left of port tube (36), and fluid tube (54) is installed in small through hole; Three groups of heating transformers (14) link to each other through heating cables with electrode (11), electrode (26), electrode (24) respectively, system (15) and heating transformer (14), diameter control probe (22), laser liquid surface position sensor (23), furnace body temperature probe (19), thermopair (32), thermopair (27), lift head (1), reinforcedly be connected through umbilical cable with weighing device (39).
5. the silicon melt czochralski silicon monocrystal growth method of filling continuously; It is characterized in that: will add the middle polysilicon of feed bin (40) through reinforced and weighing device (39) and be filled into polysilicon continuous melting pipe (35) continuously or off and on; Flow in the stable pipe of melt temperature (30) by the flow liquid mouth behind the unmelted polycrystalline silicon of continuous melting pipe (35); In the flow process of silicon melt in the stable pipe of melt temperature (30); Temperature is stabilized in the above 30-50 of fusing point ℃ the scope of silicon; Be injected in the silicon melt injection region (56) between the wall that encircles (25) and crucible (7) in the crucible by the flow liquid mouth then; (56) once more by stable and adjustment, silicon melt encircle in crucible and is lifted into silicon single-crystal (25) in continuously the temperature of the silicon melt that injects in the injection region, and the silicon melt in injection region (56) encircle in crucible in dog-hole (55) the entering crucible bottom (25) and encircles; Silicon melt is only accomplished the whole process of injecting crucible (7) under the effect of self gravitation, be installed in the variation of the liquid level position of the omnidistance Monitoring and Controlling silicon melt of laser liquid surface position sensor (23) on the bell (21).
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| CN102677156A (en) * | 2012-06-11 | 2012-09-19 | 曾泽斌 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
| CN103334157A (en) * | 2013-06-14 | 2013-10-02 | 中山大学 | Energy-saving induction coil and crystal growth furnace adopting same |
| CN104562185A (en) * | 2014-12-26 | 2015-04-29 | 华中科技大学 | Czochralski crystal growth furnace |
| CN105887193A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicone single crystal growth technique with uniform axial electrical resistivity |
| CN106012010A (en) * | 2016-08-15 | 2016-10-12 | 江苏协鑫硅材料科技发展有限公司 | Method and apparatus for secondary addition of doping agent |
| CN106319618A (en) * | 2016-09-22 | 2017-01-11 | 上海交通大学 | Equipment and method for manufacturing czochralski silicon rod from silane |
| CN106894078A (en) * | 2017-02-16 | 2017-06-27 | 温州隆润科技有限公司 | The preparation facilities and preparation method of a kind of monocrystalline silicon piece |
| CN108301039A (en) * | 2017-01-12 | 2018-07-20 | 新疆知信科技有限公司 | A kind of drawing device and drawing method of growing single-crystal silicon |
| CN108360063A (en) * | 2018-05-04 | 2018-08-03 | 蒋国庆 | Continuous crystal-pulling single crystal growing furnace |
| CN108731474A (en) * | 2018-06-20 | 2018-11-02 | 孟静 | High temperature alloy smelting device |
| CN108759467A (en) * | 2018-06-20 | 2018-11-06 | 孟静 | High temperature alloy smelting process |
| CN109306510A (en) * | 2017-07-27 | 2019-02-05 | 隆基绿能科技股份有限公司 | Material carrying path, material delivery system and crystal growth system |
| CN109855427A (en) * | 2018-12-29 | 2019-06-07 | 河北丰维机械制造有限公司 | A kind of vacuum melting furnace with agitating function |
| CN111847454A (en) * | 2019-04-25 | 2020-10-30 | 河南省德耀节能科技股份有限公司 | Calcium carbide furnace and efficient energy-saving calcium carbide production system |
| CN113061982A (en) * | 2021-03-22 | 2021-07-02 | 上海引万光电科技有限公司 | Continuous direct-pulling single crystal furnace and method capable of controlling content of monocrystalline silicon oxygen |
| CN113061978A (en) * | 2021-03-22 | 2021-07-02 | 上海引万光电科技有限公司 | Molten silicon feeder for continuous Czochralski single crystal pulling |
| CN113249778A (en) * | 2021-04-08 | 2021-08-13 | 中国电子科技集团公司第十三研究所 | Preparation method of large-size compound semiconductor single crystal |
| CN113699584A (en) * | 2021-08-27 | 2021-11-26 | 昆明理工大学 | Czochralski silicon microwave rapid material supplementing continuous production system and production method thereof |
| CN114277436A (en) * | 2020-09-28 | 2022-04-05 | 韩华思路信 | Ingot growing apparatus and control method thereof |
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| CN102677156A (en) * | 2012-06-11 | 2012-09-19 | 曾泽斌 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
| CN102677156B (en) * | 2012-06-11 | 2015-07-15 | 曾泽斌 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
| CN103334157A (en) * | 2013-06-14 | 2013-10-02 | 中山大学 | Energy-saving induction coil and crystal growth furnace adopting same |
| CN104562185A (en) * | 2014-12-26 | 2015-04-29 | 华中科技大学 | Czochralski crystal growth furnace |
| CN104562185B (en) * | 2014-12-26 | 2017-05-10 | 华中科技大学 | Czochralski crystal growth furnace |
| CN105887193A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicone single crystal growth technique with uniform axial electrical resistivity |
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| CN106894078A (en) * | 2017-02-16 | 2017-06-27 | 温州隆润科技有限公司 | The preparation facilities and preparation method of a kind of monocrystalline silicon piece |
| CN109306510A (en) * | 2017-07-27 | 2019-02-05 | 隆基绿能科技股份有限公司 | Material carrying path, material delivery system and crystal growth system |
| CN108360063A (en) * | 2018-05-04 | 2018-08-03 | 蒋国庆 | Continuous crystal-pulling single crystal growing furnace |
| CN108759467A (en) * | 2018-06-20 | 2018-11-06 | 孟静 | High temperature alloy smelting process |
| CN108731474A (en) * | 2018-06-20 | 2018-11-02 | 孟静 | High temperature alloy smelting device |
| CN109855427A (en) * | 2018-12-29 | 2019-06-07 | 河北丰维机械制造有限公司 | A kind of vacuum melting furnace with agitating function |
| CN111847454A (en) * | 2019-04-25 | 2020-10-30 | 河南省德耀节能科技股份有限公司 | Calcium carbide furnace and efficient energy-saving calcium carbide production system |
| CN114277436A (en) * | 2020-09-28 | 2022-04-05 | 韩华思路信 | Ingot growing apparatus and control method thereof |
| CN113061982A (en) * | 2021-03-22 | 2021-07-02 | 上海引万光电科技有限公司 | Continuous direct-pulling single crystal furnace and method capable of controlling content of monocrystalline silicon oxygen |
| CN113061978A (en) * | 2021-03-22 | 2021-07-02 | 上海引万光电科技有限公司 | Molten silicon feeder for continuous Czochralski single crystal pulling |
| WO2022199287A1 (en) * | 2021-03-22 | 2022-09-29 | 上海引万光电科技有限公司 | Molten silicon feeder for continuous czochralski single crystals |
| CN113249778A (en) * | 2021-04-08 | 2021-08-13 | 中国电子科技集团公司第十三研究所 | Preparation method of large-size compound semiconductor single crystal |
| CN113249778B (en) * | 2021-04-08 | 2022-05-17 | 中国电子科技集团公司第十三研究所 | Preparation method of large-size compound semiconductor single crystal |
| CN113699584A (en) * | 2021-08-27 | 2021-11-26 | 昆明理工大学 | Czochralski silicon microwave rapid material supplementing continuous production system and production method thereof |
| CN113699584B (en) * | 2021-08-27 | 2022-05-06 | 昆明理工大学 | Czochralski silicon microwave rapid material supplementing continuous production system and production method thereof |
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Application publication date: 20120418 |