CN208362524U - A kind of automatic feeding device of single crystal growing furnace - Google Patents

Abstract

The utility model relates to a kind of automatic feeding device of single crystal growing furnace, the automatic feeding device includes Weighing mechanism, master controller, charging mechanism and material storing box；Charging mechanism includes hopper, motor, shaft and baffle；There are inlet port and outlet port on hopper；Shaft is rotatably connected on hopper and is fixedly connected with the output shaft of motor, has opening on the periphery at the axial middle part of shaft, and opening is radial to extend inwardly to form hatch；The baffle is fixedly connected on hopper and is close on the periphery in the middle part of the axial direction of shaft；The material storing box is fixedly connected at the feed inlet of hopper and is connected to the feed inlet.The motor and Weighing mechanism are connect with master controller electrical connection or wireless signal.Using the utility model automatic feeding device single crystal growing furnace during carrying out the continuous drawing of monocrystal rod, it is not in polycrystalline growth phenomenon that liquid silicon material in crucible liquid level held stationary, crystal in continuous charging, which can stablize growth,.

Description

A kind of automatic feeding device of single crystal growing furnace

Technical field

The utility model relates to a kind of component of single crystal growing furnace, in particular to a kind of automatic feeding device of single crystal growing furnace.

Background technique

Silicon materials can be divided into monocrystalline silicon, polysilicon and amorphous silicon according to crystal structure.Single crystal silicon material refers to that silicon atom exists The regular periodically uninterrupted arrangement of three-dimensional space, forms a complete crystalline material, what material properties embodied be it is each to The opposite sex, i.e., various properties all have differences in different crystallographic directions.Polycrystalline silicon material then refers to by more than two sizes not The silicon materials of same monocrystalline silicon composition, what its material properties embodied is isotropism.Amorphous silicon material refers to silicon atom short Apart from interior ordered arrangement, silicon materials disorderly arranged in long range, the property of material show isotropism.For polycrystalline For silicon, when the elemental silicon of melting solidifies under the conditions of supercooling, silicon atom with diamond lattice morphologic arrangement at many nucleus, such as These nucleus of fruit grow up to the different crystal grain of high preferred orientation, then these crystal grain combine, and crystallize into polysilicon.If the simple substance of melting For silicon in solidification, silicon atom is arranged in many nucleus with diamond lattice, if these nucleus grow up to the identical crystalline substance of high preferred orientation Grain, then these crystal grain combine in parallel just crystallizes into monocrystalline silicon.Monocrystalline silicon has metalloid physical property, there is weaker lead Electrically, conductivity increases with increasing temperature, and has significant semiconduction.Ultrapure monocrystalline silicon is intrinsic semiconductor.

The method of currently manufactured monocrystalline silicon mainly has vertical pulling method, magnetic field Czochralski method, zone-melting process and double crucible crystal pulling methods.It is single Brilliant furnace is one kind in protective gas (based on nitrogen, helium) environment, melts the polycrystalline materials such as polysilicon with heater, uses The equipment of Grown by CZ Method dislocation-free monocrystalline.Single crystal growing furnace is widely used in the silicon single crystal rod manufacture of solar energy power generating and partly leads list The manufacture of crystalline silicon rod.Solar energy power generating is the generally acknowledged clean energy resource in the whole world, it is inexhaustible, is the mankind The ideal energy needed for development, countries in the world are all being greatly developed.But development is limited by two bottlenecks, first is that restricted In the photoelectric conversion efficiency of material, second is that solar photovoltaic electrification component manufacturing cost is higher, especially required for manufacture early period The energy of consumption is relatively high, therefore overall applicability and spreading speed are unhappy.In terms of photoelectric conversion efficiency, although having in recent years The cost of certain raising, unit component also has decline, has pushed the development of photovoltaic industry.But since transfer efficiency has limit limit System, room for promotion is more and more narrow, and follow-up developments space is seldom, so that the factor of transfer efficiency is to subsequent fast-developing photovoltaic power generation Kinetic energy it is smaller and smaller.

The improvement for reducing the energy consumption of manufacture monocrystalline silicon at present is carried out mainly around two aspects, first is that changing the side to feed intake Blowing out is also fed intake and changes into not blowing out and feed intake by formula.Second is that changing pulling monocrystal silicon rod method, namely list is drawn by the method for fractional steps Crystalline silicon rod changes into continuity method pulling monocrystal silicon rod.

Feed intake for not blowing out, Chinese patent literature CN101403136A(number of patent application be 200810175871.1 with Lower abbreviation document 1) disclose a kind of monocrystal stove continuous dosing device and the monocrystal stove equipped with the device.Document 1 has more One is arranged in the monocrystal stove concubine on monocrystal stove main chamber top, and the monocrystal stove continuous dosing device is arranged in concubine In.The monocrystal stove device includes barrel, and the bottom edge varus and card of barrel set a silicon wafer.It is former equipped with silicon in barrel when use Material after barrel enters concubine, from top to bottom by being located on the pin shaft for the upper end opening that main chamber is arranged on the outside of upper part, leads to Crossing corresponding transmission mechanism moves downward compression bar, to crush silicon wafer, and silicon wafer is made to fall into quartz together with silicon raw material The molten silicon liquid level of crucible, and complete to feed intake.The charging device of document 1 can be under conditions of not blow-on, continuously to silica crucible It inside feeds intake, so that monocrystal stove yield and yield rate increase, reduces energy consumption and cost, but there are structure and operation are more multiple Miscellaneous problem.In addition, since this feeding mode is disposably to cast a furnace charge, after completing furnace raw material crystal pulling production, In the case where not blowing out, for the raw material for preparing a new furnace, and the improvement of the aspect that feeds intake carried out, therefore silicon single crystal rod can not be carried out Continuous drawing.

Chinese patent literature CN10231228A(number of patent application is 201110186157.4, hereinafter referred to as document 2) it is open A kind of external continuous dosing mechanism for single crystal growing furnace.The batch charging mechanism includes the feed bin of a with closure.Bin bottom If dispensing valve.Dispensing valve is connected to a blowing inner tube.A blowing outer tube is arranged outside blowing inner tube.Blowing outer tube with One transmission mechanism connection stretched for realizing blowing outer tube along blowing inner tube extending direction.Blowing inner tube, blowing outer tube and Transmission mechanism is set in airtight cylinder.Airtight cylinder bottom end sets a ball valve or flap valve.The main furnace chamber top of single crystal growing furnace is equipped with one Feeding port, feeding port and ball valve or flap valve are tightly connected.Document 2 can realize charging in the case where not needing blowing out, so as to Continuously grow more crystal.Although the feeding mode saves, blowing out is cooling, wipe furnace, charge, vacuumize, material and etc. needed for Time, production efficiency greatly improved.But when launching polycrystalline silicon material, material directly under the effect of gravity along inner tube and The channel decline that outer tube is formed, generates biggish speed, will cause the unstable of the splashing and liquid level for melting silicon liquid.

In terms of continuity method pulling monocrystal silicon rod, can refer to Chinese patent literature CN106544726A(application No. is 201611076542 .2, hereinafter referred to as document 3) disclosed in " a kind of crystal pulling, charging, material, separation impurity is synchronous to carry out The method of continuous drawing silicon single crystal rod ".This method includes charging in crucible；Heat material；Crystal pulling, charging, material, separation are miscellaneous Matter is synchronous to be carried out；The stick of specific length or certain length is pulled by a lifting head on pulling apparatus；It is lifted by conversion Continue crystal pulling, charging, material, separation impurity after another lifting head on device；It repeats to draw until silicon rod quality is because of impurity Influence is near the mark requirement, then blowing out, prepurging.This method is saved by crystal pulling, charging, material, the synchronous progress of separation impurity Former charging, material, crystal bar cooling, blowing out, prepurging time, can repeat the lifting head of switching by two, it is cooling, take Stick is all synchronous with crystal pulling to carry out, and the time is greatly saved.Master alloy, consumption and additive amount one are gradually added in pulling process It causes, therefore substantially increases the quality of silicon rod with the method crystal pulling of the document, can control in crystal pulling so that pulling out crystal matter Amount and addition silicon material uniform quality, to may make long brilliant liquid level position constant, the temperature fluctuation of long crystalline substance liquid level can be long with very little Will be very stable when brilliant, there is no problem for ordinary circumstance material quality, and continuous drawing can be with one month or more.But this method Feed intake aspect do not provide specific scheme, if using the scheme of prior art, will will cause fusing silicon liquid splashing and Liquid level it is unstable.

Existing single crystal growing furnace mainly includes bell, furnace body, Crystal Rotation pulling apparatus, crucible, crucible lifting rotating mechanism And heater, crucible and heater therein belong to the thermal field component of single crystal growing furnace.The thermal field component of single crystal growing furnace further includes insulation cover With insulation cover etc..Crucible, heater, insulation cover and insulation cover are respectively provided in furnace body, and heater is arranged around crucible, and insulation cover encloses It is arranged around heater, insulation cover is located on insulation cover, and the lower part of crucible drives the liter of crucible by crucible lifting rotating mechanism Drop and rotation.The top of bell is arranged in Crystal Rotation pulling apparatus.The rope of Crystal Rotation pulling apparatus (uses single crystal growing furnace With tungsten wire rope) pass through bell enter furnace body.To the single crystal growing furnace of document 3 when using prior art charging, can generally it lead to It crosses manually-operated mode to feed, seed crystal is fixed in seed holder by certain way, seed holder and crystal revolve The rope for turning pulling apparatus is connected, and vacuumizes again after bell on crystal pulling front cover, then be passed through argon gas.Then starting heater makes It knocks down the solid silicon material in crucible and is molten into liquid silicon material, liquid silicon material is along seed crystal lower end periodic arrangement according to certain rules, no Disconnected crystal growth, crystal need to lift upwards constantly in rotation during the growth process and generate crystal bar and extend.The utility model Utility model people discovery: it says in principle, it is desirable that how much is crystal growth, and charging quantity is exactly how many but current manual control The mode of charging is difficult to accomplish that charging quantity matches with crystal growth quantity.When charging quantity is greater than rate of crystalline growth, The liquid level of the liquid silicon material in crucible can be made to increase, the distance between liquid level and crucible top can become smaller；When charging quantity is less than When rate of crystalline growth, the liquid level of the liquid silicon material in crucible can be made to reduce, the distance between liquid level and crucible top can become larger, To which crystal can be prevented to grow from stablizing, or even there is polycrystalline growth phenomenon (also referred to as disconnected crest line phenomenon or disconnected brilliant line phenomenon).

Summary of the invention

The purpose of this utility model is that proposing a kind of automatic feeding device of single crystal growing furnace.The device is used for energy after single crystal growing furnace It is enough enable liquid silicon material during crystal pulling in crucible is kept during continuous charging liquid level steadily, crystal stablize life It is long, it is not in polycrystalline growth phenomenon.

Realizing technical solution used by above-mentioned purpose is: the automatic feeding device of the single crystal growing furnace of the utility model, including Material storing box and the first valve.It is structurally characterized in that: further including Weighing mechanism, charging mechanism and master controller.The charger Structure is equipped with protective gas access port and vacuumizes interface, and charging mechanism include hopper, motor, shaft, baffle, stock guide and Connecting plate.The feed pipe and underlying discharge nozzle that the hopper has cabinet, is located above, and feed pipe and discharge nozzle It is connected with the inner cavity of cabinet.Feed pipe is closed to be arranged on cabinet or is arranged on cabinet by the way that other sealing elements are closed. Discharge nozzle is closed to be arranged on cabinet or is arranged on cabinet by the way that other sealing elements are closed.The motor is directly solid by its base Surely it is connected on hopper or is fixedly connected in other fixed structure pieces.The shaft is rotatably connected on hopper, and shaft Main body is located in the cabinet of hopper, and between feed pipe and discharge nozzle.The left end of shaft is connected with the output shaft of motor； There is opening on the periphery at the axial middle part of shaft, and it is radially inwardly extending to form hatch to be open, and hatch is used for Solid silicon material is fallen into and fallen in shaft rotation.Baffle, stock guide and the connecting plate is respectively positioned in the cabinet of hopper.Institute The connecting plate stated is fixedly connected on the cabinet of hopper by its left and right end portions.The baffle is fixedly connected on connection by its top On plate, left and right ends are close on the periphery in the middle part of the axial direction of shaft close to cabinet.The stock guide is according to preceding height Low mode is arranged afterwards, and its front side edge edge is fixedly connected on connecting plate or is stationarily connected on cabinet, and its plate Body is located at the lower section of feed pipe.The setting of cabinet, shaft, baffle, stock guide and connecting plate, so that mutual gap is less than admittedly The partial size of body silicon material.The top of the cabinet of material storing box is arranged in the protective gas access port of the charging mechanism.Material storing box It is closed to be fixedly connected on hopper positioned at the top of hopper, and its discharge port is connected to feed pipe.First valve is arranged in storing The underlying discharge outlet of case.Weighing signal output end, motor and the respective control of the first valve of the Weighing mechanism End is connect with master controller electrical connection either wireless signal.The interface that vacuumizes of the charging mechanism is arranged in material storing box Bottom either hopper bottom.

The automatic feeding device of the single crystal growing furnace further includes material buffer mechanism, insulation cover, guiding tube and single crystal growing furnace Bell.The bell is equipped with feed inlet.The material buffer mechanism includes cylinder, left baffle and right baffle.The cylinder Upper end be equipped with feed inlet, lower end be equipped with discharge port.Equal, or both the difference one of the quantity of the left baffle and right baffle Block, and the alternate setting of the two.Each piece of right baffle-plate is fixedly connected on the inner wall of cylinder in the way of right low left high.Each piece of right side Baffle is fixedly connected on the inner wall of cylinder in the way of left low and right high, and is located at the opposite of right baffle-plate.Adjacent right baffle-plate Between right shell body have a certain distance, the distance be greater than use in input by solid silicon material particle partial size, and on The lower edge of side baffle is located at the top of the plate body of adjacent lower side baffle.

In use, material buffer mechanism is arranged on insulation cover, bottom is located in crucible, and the bottom is close from top The maximum height of the liquid level of scheduled liquid silicon material being actually reached；Guiding tube is fixedly connected on bell from interior survey by its feed inlet Feed inlet at, and its discharge port is located at the top of the feed inlet of cylinder, and close to the feed inlet of cylinder；The discharging of charging mechanism The corresponding pipeline for managing the feed inlet for being connected to bell by discharge port detachable hermetic is connected with guiding tube, and described The discharge port of corresponding pipeline is fixedly connected on from the feed inlet of bell from outside is closed.

The material buffer mechanism of the automatic feeding device of the single crystal growing furnace is the integral piece that material is quartz glass.

The hopper of the automatic feeding device of the single crystal growing furnace includes left case lid, cabinet and right case lid；The left case lid and Right case lid is fixedly connected on cabinet；The shaft includes left axle section, middle shaft part and right axis section；The left axle section rotation connection On left case lid；The right axis section is rotatably connected on right case lid；The hatch is located in the inner cavity of cabinet, and is located at shaft On middle shaft part.

Material storing box is arranged in the protective gas access port of the charging mechanism of the automatic feeding device of the single crystal growing furnace The top of cabinet.The bottom for vacuumizing interface and the cabinet of material storing box being set of the charging mechanism.

The automatic feeding device of the single crystal growing furnace further includes shaft coupling.The shaft is sequentially connected by shaft coupling in electricity On the output shaft of machine.

The automatic feeding device of the single crystal growing furnace further includes liquid level follower.The ranging of the liquid level follower Signal output end is connect with master controller electrical connection either wireless signal.

The automatic feeding device of the single crystal growing furnace further includes the second valve.The discharge nozzle of hopper is arranged in second valve Discharge outlet, and the control terminal of the second valve is connect with master controller electrical connection either wireless signal.

The utility model has following good effect: (1) due to the automatic feeding device of the single crystal growing furnace of the utility model The base of motor is fixedly connected in hopper or other other fixed structure pieces, and shaft is rotatably connected on hopper and can pass through connection Axis device is fixedly connected with the output shaft of motor, and shaft is equipped with hatch, and there is also material space is needed in hopper, then motor rotates When, the solid silicon material fallen into hatch can be sent out downwards to hopper, and the charging of single crystal growing furnace is reached by connecting line Mouthful, and it is put into crucible using guiding tube and material buffer mechanism, it is solid so as to be controlled by the revolving speed for controlling motor The inventory of body silicon material.(2) the utility model is in use, in the number for automatically determining inventory, respectively by the control of motor End processed, the control terminal of the first valve, the control terminal of the second valve and Weighing mechanism weighing-up wave output end and main control The tension measurement connector of Weighing mechanism, is also connected to the crystal pull device of single crystal growing furnace by device electrical connection or wireless signal connection Rope on, thus Weighing mechanism can accurately weigh up the real-time weight of the crystal bar in lifting, and by the crystal bar in lifting Real-time weight information be transmitted to master controller, as master controller according to needed for the flow indicator calculates of the real-time weight of crystal bar in the unit time Feeding quantity, and calculate according to required feeding quantity the setting speed of motor.(3) due to being preferably provided with material buffer mechanism, no Only can be to avoid the splashing of liquid silicon material, and can to feed intake when institute's charging quantity to match with crystal growth quantity, from And the liquid silicon material in crucible is made to keep liquid level steady during continuous charging, crystal can stablize growth, will not occur Polycrystalline growth phenomenon.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the automatic feeding device of the single crystal growing furnace of the utility model.

Fig. 2 is the schematic diagram of the charging mechanism and material storing box in Fig. 1, and the label 4 in figure indicates first at signified position The installation site of valve, the second valve are mounted on the discharge outlet of discharge nozzle, are not drawn into figure.

Fig. 3 is the A-A schematic cross-sectional view of Fig. 2.

Fig. 4 is the schematic diagram of the shaft in Fig. 2.

Fig. 5 is the schematic top plan view of Fig. 4.

Fig. 6 is the schematic diagram that the liquid level follower in Fig. 1 is connected on the bell of single crystal growing furnace.

Fig. 7 is the schematic diagram on the rope for the Crystal Rotation pulling apparatus that Weighing mechanism is connected to single crystal growing furnace.

Fig. 8 is the enlarged diagram of the material buffer mechanism in Fig. 1.

Appended drawing reference in above-mentioned attached drawing is as follows: Weighing mechanism 1, material storing box 2, charging mechanism 3, hopper 30, left case lid 30- 1, cabinet 30-2, right case lid 30-3, feed pipe 30-4, discharge nozzle 30-5, top closure 30-6, casing 30-7 covers 30-8, electric Machine 31, shaft 32, left axle section 32-1, middle shaft part 32-2, right axis section 32-3, be open 32-4, hatch 32-5, baffle 33, stock guide 34, connecting plate 35, guide plate 36, preceding guide plate 36-1, rear deflector 36-2, shaft coupling 37, the first valve 4, material buffer machine Structure 5, cylinder 51, circumferential projection portion 51-1, right baffle-plate 52, right shell body 53, liquid level follower 6, solid silicon material 7, master controller 8, bell 100, feed inlet 101, insulation cover 102, insulation cover 103, crucible 104, guiding tube 105, rope 106, furnace body 107.

Specific embodiment

In the following description, according to the corresponding direction of orientation references up and down shown in FIG. 1, and will be towards paper A side be used as front, will away from paper a side as rear.

(embodiment 1)

See Fig. 1, the automatic feeding device of the single crystal growing furnace of the present embodiment include Weighing mechanism 1, material storing box 2, charging mechanism 3, Valve, material buffer device 5, liquid level follower 6 and master controller 8.Valve includes the first valve 4 and the second valve.Weighing The weighing-up wave output end of mechanism 1, the control terminal of motor, the first valve 4 and the respective control terminal of the second valve, liquid level tracing machine 6 laser ranging signal output end of structure is connect with master controller electrical connection or wireless signal.

See that Fig. 1 to Fig. 3, the charging mechanism 3 include hopper 30, motor 31, shaft 32, baffle 33, stock guide 34, connect Fishplate bar 35, guide plate 36 and shaft coupling 37.The hopper 30, shaft 32, baffle 33, stock guide 34, connecting plate 35 and guide plate 36 material is stainless steel.The cabinet 30-2 of the hopper 30 is the cabinet of cuboid, and hopper 30 is equipped with and is located above Feed pipe 30-4 and underlying discharge nozzle 30-5.Feed pipe 30-4 is closed to be arranged on cabinet 30-2 or passes through other sealings Part is closed to be arranged on cabinet 30-2.Discharge nozzle 30-5 is closed to be arranged on cabinet 30-2 or passes through the closed setting of other sealing elements On cabinet 30-2.The motor 31 is fixedly connected on hopper 30 by its base.

The shaft 32 is rotatably connected on hopper 30, and the main body of shaft 32 is located in the inner cavity of hopper 30, and be located at into Between material mouth 30-4 and discharge port 30-5.The left end of shaft 32 is fixedly connected by shaft coupling 37 with the output shaft of motor 31.Turn There is opening 32-4 on the periphery at the axial middle part of axis 32, opening 32-4 is radially inwardly extending, so that hatch 32-5 is formed, and And the front and back of hatch 32-5 to, left and right to and radial length be all larger than the partial size of solid silicon material particle.The shaft 32 is wrapped Include left axle section 32-1, middle shaft part 32-2 and right axis section 32-3.The hatch 32-5 of shaft 32 is located on middle shaft part 32-2.

The hopper 30 further includes left case lid 30-1, right case lid 30-3, top closure 30-6, casing 30-7 and capping 30- 8.The left case lid 30-1 and right case lid 30-3 are fixedly connected on cabinet 30-2.Shaft 32 is existed by its right end by setting Rolling bearing on right case lid 30-3 and be rotatablely connected with hopper 30.Shaft 32 by its left axle section 32-1 pass through and sliding bearing Effect left case lid 30-1 and with hopper 30 be rotatablely connected.Feed pipe 30-4 and top closure 30-6 airtight connection, top closure 30-6, casing 30-7,30-8 and cabinet 30-2 successively airtight connection is covered.The connecting plate 35 is equipped with medium pore, hopper 30 Feed pipe 30-4 the medium pore is passed through by its lower port, and be weldingly fixed on connecting plate 35.Connecting plate 35 is horizontally disposed, And it is fixedly connected on the cabinet 30-2 of hopper 30 by its left and right end portions.33 vertical of the baffle setting, and it is solid by its top Surely it is connected on connecting plate 35, left and right ends are close to cabinet 30-2, and baffle 33 is close to the axial direction in shaft 32 from rear On the periphery at middle part, and block from rear side the middle shaft part 32-2 of shaft 32.And baffle 33 is set with the contact site of shaft 32 There is the arc pit 33-1 matched with shaft 32.The stock guide 34 is arranged in such a way that the front is high and the back is low, and its front side Edge is fixedly connected on connecting plate 35.The plate body of stock guide 34 is located at the lower section of feed pipe 30-4, and the rear side of stock guide 34 Edge is located at the lower section at the central part of feed pipe 30-4, and the periphery of the rear lateral edge of stock guide 34 and shaft 32 away from The left and right ends of partial size and stock guide 34 from the particle for being less than solid silicon material 7 are close to cabinet 30-2.Namely cabinet 30-2, The setting of shaft 32, baffle 33, stock guide 34 and connecting plate 35, so that mutual gap is less than the partial size of solid silicon material 7.The Two valves preferably can be automatically controlled ball valve, the discharge outlet of the discharge nozzle 30-5 of hopper 30 is arranged in the second valve.

Guide plate 36 has 2 pieces, point front and back setting, thus guide plate 36-1 and rear deflector 36-2 before being known as.Preceding guide plate 36-1 is arranged in such a way that the front is high and the back is low, and is located at the front lower corner of hopper 30；Rear deflector 36-2 is according to low early and high after Mode is arranged, and is located at the posterior angle portion of hopper 30, and is symmetrical arranged relative to preceding guide plate 36-1；And preceding guide plate 36-1 Cabinet 30-2 is close to the left and right ends of rear deflector 36-2.

See Fig. 1 and Fig. 2, the material storing box 2 is located at the top of hopper 30, and material storing box 2 is fixedly connected on hopper 30, storage The discharge port of hopper 2 and the feed inlet 30-4 airtight connection of hopper 30, and the inner cavity of material storing box 2 and the inner cavity of hopper 30 connect It is logical.Material storing box 2 is equipped with protective gas access port at the top of its cabinet, and is equipped with to vacuumize in the bottom of its cabinet and connect Mouthful.First valve 4 of the material storing box 2 also in the setting of its discharge outlet for isolation.First valve 4 preferably can be automatically controlled ball Valve.

See that Fig. 1, master controller 8 are PLC programmable logic controller (PLC), a port and Weighing mechanism of signal input part 1 weighing-up wave output end electrical connection, a port of control signal output are electrically connected with the control terminal of motor 31.

Still see that when in use, the discharge port 30-5 of hopper 30 is led to by Fig. 1, the automatic feeding device of the single crystal growing furnace of the present embodiment It crosses corresponding pipeline to be connected to the feed inlet of furnace body, the solid silicon material in material storing box 2 falls by the feed inlet 30-4 of hopper 30 Into the inner cavity of hopper 30, and by stock guide 34 guiding and drop down onto shaft 32, and be located at hopper 30 inner cavity in after Portion.

Fig. 1 and Fig. 7 is seen, by the rope 106 of the Crystal Rotation pulling apparatus coupled from above in single crystal growing furnace of Weighing mechanism 1 On, Weighing mechanism 1 is the tension load cell of model THS, is produced by plum Teller-support benefit group.Weighing mechanism 1 can be with The real-time weight of the crystal bar in lifting is accurately weighed up, and the real-time weight information of the crystal bar in lifting is defeated by its weighing-up wave Outlet is transmitted to master controller 8.

See Fig. 1 to Fig. 5, with as master controller 8 according to needed for the flow indicator calculates of the real-time weight of crystal bar in the unit time Feeding quantity, and calculate according to required feeding quantity the setting speed of motor 31, then by master controller 8 issue signal make motor 31 by The rotation of the calculated setting speed of master controller 8, motor 31 then drive 32 synchronous rotary of shaft.In rotation, it is in shaft 32 On solid silicon material follow shaft 32 to rotate together.If shaft 32 with upper part towards rotating backward, in solid silicon material with The periphery of shaft 32 be in contact part or all under the blocking of baffle 33, be pulled in the hatch 32-5 of shaft 32；Electricity Machine 31 drives shaft 32 to continue rotation extremely when being directed downward of 32-4 of opening by setting speed, and the solid silicon material in hatch 32-5 exists It is detached from downwards under the action of gravity after hatch 32-5 is dropped down on rear deflector 36-2 and is fallen using discharge port 30-5, and continue Furnace body feed inlet is reached by related pipeline.If shaft 32 is rotated with upper part towards front, in solid silicon material with turn The periphery of axis 32 be in contact part or all under the blocking of stock guide 34, be pulled in the hatch 32-5 of shaft 32；Electricity Machine 31 drives shaft 32 to continue rotation extremely when being directed downward of 32-4 of opening by setting speed, and the solid silicon material in hatch 32-5 exists It falls, and continues using discharge port 30-5 after being detached from downwards under the action of gravity before hatch 32-5 is dropped down on guide plate 36-1 Furnace body feed inlet 101 is reached by related connecting line.It can accomplish that charging quantity matches with crystal growth quantity in this way, To make the liquid silicon material in crucible keep liquid level steady during continuous charging, crystal can stablize growth, will not go out The phenomenon that existing polycrystalline growth.

See that Fig. 1 and Fig. 8, the material buffer device 5 are the integral piece that material is quartz glass, including cylinder 51 and muti-piece Baffle.Each block baffle is set gradually in the up-down direction, and is divided into 52 He of right baffle-plate according to the difference of locating left-right position Right shell body 53.

The upper end of the cylinder 51 is equipped with feed inlet, and lower end is equipped with discharge port.The right baffle-plate 52 and right shell body 53 Equal, or both one piece of the difference of quantity, and right baffle-plate 52 and the alternate setting of right shell body 53.Each piece of right baffle-plate 52 is according to left height Right low mode is fixedly connected on the inner wall of cylinder 51, and right baffle-plate 52 except remaining edge position in addition to of the right with The inner wall of cylinder 51 is connected.Each piece of right shell body 53 is fixedly connected on the inner wall of cylinder 51 in the way of left low and right high, and position In the opposite of right baffle-plate 52, and remaining edge position in addition to left margin of right shell body 53 also with the inner wall phase of cylinder 51 Even.There is a certain distance, which is greater than solid silicon input in use between adjacent right baffle-plate 52 and right shell body 53 Expect the partial size of particle, and the lower edge of upper side baffle (refers to the right edge, for right shell body 53 for right baffle-plate 52 Refer to left margin) be located at adjacent lower side baffle plate body top.

The cylinder 51 is preferably that upper end is equipped with feed inlet, and lower end is equipped with the shell of the cuboid of discharge port, cylinder 51 Upper end on the outside of be protruding parts, the circumferential projection portion 51-1 as cylinder 51.The rest part of cylinder 51 is then a main body.Cylinder The size of the length, width and height of main body be 100 × 80 × 400, namely left and right to length be 100mm, front and back to length be 80mm, height For 400mm.In other embodiments, cylinder main body is also possible to cylindrical tube or elliptical cylinder-shape cylinder, cylinder 51 at this time The protruding parts as circumferential projection portion 51-1 is also provided on the outside of upper end.

Still see Fig. 1, cylinder 51 includes left side wall, right side wall, antetheca and rear wall, and the wall thickness of each side of cylinder 51 is 5mm.Institute It states left side wall, antetheca, right side wall and rear wall to be sequentially connected, and rear wall is connected with left side wall again, to surround cylinder 51.The left side Baffle 52 and right shell body 53 are size identical rectangular plate body, and left and right is 80mm to length, and front and back is also to length 80mm, plate thickness 3mm.The right baffle-plate 52 has 2 pieces, and according to order from top to bottom be successively known as the first right baffle-plate and the Two right baffle-plates.Each left baffle 52 is connected in turn in the way of right low left high by its front edge, left margin and back edge On antetheca, left side wall and rear wall, and each piece of right baffle-plate 52 is parallel to each other, and the left and right side of each left baffle 52 is along corresponding Horizontal line setting, the right of right baffle-plate 52 is the angles of 40 to 50 degree along place horizontal plane and the angle of cut of 52 place plane of right baffle-plate Degree.The right shell body 53 has 3 pieces, and according to order from top to bottom be successively known as the first right shell body, the second right shell body and the Three right shell bodies.Every piece of right shell body 53 is connected in turn in the way of left low and right high by its front edge, the right edge and back edge On antetheca, right side wall and rear wall, and each piece of right shell body 53 is parallel to each other, and the left and right side of every piece of right shell body 53 is along corresponding Horizontal line setting, horizontal plane where the left margin of right shell body 53 and the angle of cut of 53 place plane of right shell body are the angles of 40 to 50 degree Degree.The right baffle-plate 52 and the alternate arrangement of right shell body 53, the minimum range between adjacent right baffle-plate 52 and right shell body 53 are greater than 50mm.In the up-down direction, the first right shell body is located at the top of cylinder 51, and its left margin is located at the upper and lower of the first right baffle-plate To middle position, the left margin of the second right shell body be located at the right of the first right baffle-plate along and the second right baffle-plate the right along it Between, third right shell body is located at the bottom of cylinder 51, and the right of the first right baffle-plate is along the left margin for being located at the first right shell body Between the left margin of the second right shell body, the right of the second right baffle-plate is along the left margin and third right shell body for being located at the second right shell body Left margin between.

Still see that when in use, feed inlet is arranged on bell 100 in Fig. 1, the automatic feeding device of the single crystal growing furnace of the present embodiment The 101(feed inlet is also the feed inlet of single crystal growing furnace), which can be set (also can be set in the side of bell 100 The top of bell 100 shown in Fig. 6).Material buffer device 5 is arranged again on the insulation cover 102 of thermal field component of single crystal growing furnace. Specific structure is that rectangular mounting hole is opened up on insulation cover 102, the periphery of the cylinder main body of the size and cylinder 51 of the mounting hole Size is corresponding, and cylinder 51 passes through the mounting hole from top to bottom, and is located at setting for insulation cover 102 by its circumferential projection portion 51-1 It sets at the position of the mounting hole.Either cylinder 51 is not provided with circumferential projection portion 51-1, and uses the corresponding terrace with edge shell of size Shape is then stuck on mounting hole when cylinder 51 from top to bottom passes through mounting hole.Certainly, rotary table hull shape also can be used in cylinder 51 Shape, and mounting hole selection corresponding size round hole；Or the shape of elliptical table hull shape also can be used in cylinder 51, and installs The slotted eye of hole selection corresponding size.

The bottom of material buffer device 5 is located at being actually reached in maximum height of the liquid level of the liquid silicon material in crucible 104 4 to 5 centimeters of side.In use, it is drawing for quartz glass that material is arranged also between feed inlet 101 and material buffer device 5 Conduit 105.When solid silicon material 7 is knocked down the feed inlet 101 of single crystal growing furnace by charging mechanism 103, solid silicon material 7 passes through guide wire 105 be directed through the feed inlet of cylinder 51 after, on liquid level that the liquid silicon material in crucible will not be fallen directly on, but through and friendship It is fallen on the liquid level of the liquid silicon material in crucible 104 again after mistake setting right baffle-plate 52 and right shell body 53.Solid can be reduced in this way The decline potential energy of silicon material 7 guarantees that liquid silicon material will not splash, is not in polycrystalline growth to keep the crystal pulled out more stable Phenomenon.

In use, the discharge nozzle 30-5 of charging mechanism 3 is connected to the feed inlet of bell 100 by discharge port detachable hermetic 101 corresponding connecting line is connected with guiding tube 105, and the discharge port of the corresponding connecting line is close from outside It closes and is fixedly connected at the feed inlet 101 of bell 100.

The shaft 32 includes left axle section 32-1, middle shaft part 32-2 and right axis section 32-3.The left axle section 32-1 rotation connects It connects on left case lid 30-1.The right axis section 32-3 rotation connection is on right case lid 30-3.The hatch 32-5 is located at cabinet In the inner cavity of 30-2 and it is located at the middle shaft part 32-2 of shaft 32.The baffle 33 is pressed on the middle shaft part of shaft 32 from back to front On the periphery of 32-2.

See Fig. 6 and Fig. 1, the model CMOS LKG5000 Keyemce of liquid level follower 6, using laser distance measuring principle into Row ranging and realize tracking liquid silicon feed liquid surface function.In use, liquid level follower 6 is fixed on the bell 100 of single crystal growing furnace On.Although charging quantity can be determined according to the quantity of crystal growth, since the size of solid silicon material 7 is inconsistent, because This can have certain error, change the liquid level of the liquid silicon material in crucible 104 can still in certain altitude range.It adopts After liquid level follower 6, the liquid level of the liquid silicon material measured is fed back to master controller 8 by liquid level follower 6.Work as liquid When the liquid level for the liquid silicon material that face follower 6 is measured is lower than the liquid level that master controller 8 is set, by master controller 8 Issuing signal makes motor 31 by the rotational speed for being higher than setting speed, accelerates charging rate；It is measured when liquid level follower 6 The liquid level of liquid silicon material be higher than master controller 8 set liquid level when, by master controller 8 issue signal make motor 31 by Lower than the rotational speed of setting speed, slow down charging rate.The automatic feeding device of the present embodiment on single crystal growing furnace in use, The difference of the liquid level height of liquid level and master controller 8 setting of liquid silicon material in crucible 104 in this way may be used within positive and negative 1mm Keep the crystal pulled out more stable.

The automatic feeding device of the single crystal growing furnace of the present embodiment is before use, be fixed on monocrystalline for liquid level follower 6 On the bell 100 of furnace, the guiding tube 105, Yi Ji of the inside installation quartz glass material at the feed inlet 101 of bell 100 Material buffer mechanism 5 is provided on insulation cover 102.Bell 100 is in the open state, insulation cover 102 is in lifting position When, by manually or by special feeding device solid silicon material 7 is added in crucible 104, and stayed in solid silicon material 7 The lower pit for accommodating material buffer mechanism 5.Again from manually inputting corresponding operation instruction to master controller 8, master controller 8 is then controlled Corresponding operation mechanism processed drops to the insulation cover for being already provided with material buffer mechanism 5 102 to be located at insulation cover 103 On.Due to the presence of the pit of above-mentioned solid silicon material 7, to guarantee that the bottom of material buffer mechanism 5 does not connect with solid silicon material 7 Touching.At this point, keeping Weighing mechanism 1 and the connection of the upper end of the rope 106 of crystal pull device constant, in rope 106 Seed crystal is connected in the seed holder that lower end has connected.The seed crystal is then extremely located in the attached cylinder of 100 top of bell by lifting, The height of attached cylinder is usually 6 meters, and is equipped at the top of it and is used as protective gas access port, and the protective gas is preferred Argon gas or nitrogen.Again from manually inputting corresponding operation instruction to master controller 8, master controller 8 then controls corresponding operation machine Structure makes related rotating mechanism that bell 100 is moved to the top of furnace body 107, then makes related elevating mechanism by bell 100 drop on the shell for being located at furnace body 107, drop to attached cylinder and are located on bell 100.Bell 100 this When the location of can ensure the discharge port of guiding tube 105 be located at material buffer mechanism 53 to 10 centimetres of top (preferably 4 to 5 centimetres) at.Then, it is vacuumized from the interface that vacuumizes that the bottom of furnace body 107 is arranged, while to the protective gas of attached cylinder Access port is passed through protective gas (further preferred argon gas), and the inside of single crystal growing furnace is then made to be in protectiveness gas after a period of time In the protective atmosphere of body.In addition, also being vacuumized and being passed through the operation of same protective gas (argon gas) in material storing box 2 (top of material storing box 2 is equipped with protective gas access port, and bottom is equipped with and vacuumizes interface), so that being equipped with the storage of solid silicon material 7 The inside of hopper 2 is in the protective atmosphere of protective gas, can stop the vacuum pumping to material storing box 2 at this time, and Stop the operation that protective gas is passed through to material storing box 2.At this point, again from manually inputting corresponding operation instruction to master controller 8, So that in the thermal field component of single crystal growing furnace heater (heater be schematically depicted in the crucible 104 in Fig. 1 outer circumferential and The week of insulation cover 103 inwardly between, it is belong to conventional arrangement, unlabeled) it is electric and generate heat, thus to the solid in crucible 104 Silicon material 7 is heated and is allowed to melt.During the fusing, continue being filled with for the protective gas for keeping attached cylinder And the unlatching of the vacuum pump of 107 bottom of furnace body.(peep-hole can be passed through after the solid silicon material 7 in crucible 104 is molten into liquid Observation is learnt), the bottom of material buffer mechanism 5 is located in crucible 104, and the reality of the liquid level of the bottom and scheduled liquid silicon material Border reaches maximum height and differs 4 to 5 centimetres.Again from manually inputting corresponding operation instruction to master controller 8, so that seed crystal falls Extremely it is in contact with the liquid level of liquid silicon material.Again by the discharge port 30-5 of hopper 30 from external and 101 phase of feed inlet on bell 100 Connection, further according to setting open be arranged in material storing box 2 discharge outlet ball valve for a period of time, be then shut off, so that material storing box 2 Interior solid silicon material 7 passes through feed pipe 30-4, falls in cabinet 30-2, and be deposited in shaft 32, and is located at feed pipe 30- 4 lower sections, 33 front of baffle, 34 rear of stock guide, the top of shaft 32 and cabinet 30-2 corresponding site be formed by space, The space can be described as to material space.

At this point, although there are also partial airs to remain in the connecting pipe of hopper 30 and lower section, due to 107 bottom of furnace body The lasting unlatching of the vacuum pump in portion, and continue to keep pouring argon gas into attached cylinder, so that this entire part is remaining Air is substituted by argon gas, namely makes system all in the protective atmosphere of protective gas.In this state, single crystal growing furnace is then It may be implemented in the continuous crystal-pulling under continuous auto feed, namely enter the state that can start continuous crystal-pulling, under this state Subsequent continuous crystal-pulling during, also include the operating method of the automatic feeding device of the single crystal growing furnace.The present embodiment Single crystal growing furnace automatic feeding device operating method, comprising the following steps:

After 1. single crystal growing furnace entrance can start the state of continuous crystal-pulling, from manually inputting corresponding operation to master controller 8 Instruction, runs automatic crystal pulling program, wherein Weighing mechanism 1 is in the state per second once weighed, and weighs crystal bar to each The real-time weight information obtained is transmitted to master controller 8, and opens the second valve.

2. master controller 8 adds using the difference of the adjacent real-time weight of crystal bar twice as required feeding quantity according to required Doses calculates setting speed required for motor 31.

3., if the opening 32-4 of shaft 32 is upward, this method falls to shaft before starting before the starting of motor 31 Some falls into hatch 32-5 for solid silicon material 7 on 32, remaining is then deposited in remaining position upward of shaft 32 And the top of the solid silicon material 7 in hatch 32-5；If the opening 32-4 of shaft 32 is downward, this method starts preceding whereabouts On the position upward that solid silicon material 7 on to shaft 32 is all deposited in shaft 32.

4. the rotation due to motor 31 is controlled by the signal that master controller 8 issues, control of the motor 31 in master controller 8 2. calculated setting speed rotates according to step for the lower rotation of system namely motor 31, and motor 31 drives 32 synchronous rotary of shaft.It is right Revolving speed when motor 31 starts for the first time rotates into capable rotation according to per second 1, and revolving speed when being again started up for motor 31 is according to upper Revolving speed when secondary shutdown is rotated.

5. when motor 31 starts, for shaft 32 opening 32-4 downward the case where, with the rotation of shaft 32, Due to the blocking of baffle 33 or stock guide 34, solid silicon material 7 cannot be left to material space, and when the opening 32-4 of shaft 32 is by court When turning to upward downwards, then a part for the solid silicon material 7 being deposited in shaft 32 is fallen into hatch 32-5；Shaft 32 continue to rotate to its be open 32-4 downward when, then the solid silicon material 7 in hatch 32-5 fall to before guide plate 36-1 or On rear deflector 36-2, then successively pass through discharge nozzle 30-5, the second valve and corresponding pipeline along corresponding guide plate 36 Afterwards, the feed inlet 101 of single crystal growing furnace is reached, then is entered in crucible 104 through material buffer mechanism 5.This feed way circulation carries out.

6. motor 31 start when, for shaft 32 opening 32-4 upward the case where, motor 31 drive shaft 32 By setting speed rotate to opening when being directed downward of 32-4, then the solid silicon material 7 in hatch 32-5 under gravity, under Before dropping down on guide plate 36-1 or rear deflector 36-2, then successively pass through discharge nozzle 30-5, second along corresponding guide plate 36 After valve and corresponding pipeline, the feed inlet 101 of single crystal growing furnace is reached, then enter in crucible 104 through material buffer mechanism 5.This Kind feed way circulation carries out.

7. master controller 8 each seconds receive the liquid level for once measuring the liquid silicon material in crucible 104 by liquid level follower 6 Height and the liquid level signal sent, and judged, if a period of time (such as per minute, every 5 minutes and 10 minutes every) Liquid level difference represented by received altitude signal when being less than the difference for the liquid level that master controller 8 is set, then by leading Controller 8, which issues signal, makes motor 31 by the rotational speed for being higher than setting speed；If liquid represented by received altitude signal When face difference in height is greater than the difference for the liquid level that master controller 8 is set, then issuing signal by master controller 8 makes motor 31 by low In the rotational speed of setting speed；If the difference of liquid level represented by received altitude signal be no more than set model When enclosing, then keep the original revolving speed of motor 31 constant.

Above embodiments and corresponding application are the explanations to specific embodiment of the present utility model, rather than to this reality With novel limitation, person skilled in the relevant technique is not in the case where departing from the spirit and scope of the utility model, also Various transformation can be made and variation obtains corresponding equivalent technical solution, therefore all equivalent technical solutions should all This is included into the scope of patent protection of the utility model.

Claims (8)

1. a kind of automatic feeding device of single crystal growing furnace, including material storing box (2) and the first valve (4)；It is characterized by also including titles Heavy-duty machine structure (1), charging mechanism (3) and master controller (8)；The charging mechanism is equipped with protective gas access port and vacuumizes Interface, and charging mechanism (3) includes hopper (30), motor (31), shaft (32), baffle (33), stock guide (34) and connecting plate (35)；The feed pipe (30-4) and underlying discharge nozzle that the hopper (30) has cabinet (30-2), is located above (30-5), and feed pipe (30-4) and discharge nozzle (30-5) are connected with the inner cavity of cabinet (30-2)；Feed pipe (30-4) is close It closes and is arranged on cabinet (30-2) or is arranged on cabinet (30-2) by the way that other sealing elements are closed；Discharge nozzle (30-5) is closed to be set It sets on cabinet (30-2) or is arranged on cabinet (30-2) by the way that other sealing elements are closed；The motor (31) is straight by its base It connects and is fixedly connected on hopper (30) or is fixedly connected in other fixed structure pieces；The shaft (32) is rotatably connected on hopper (30) on, and the main body of shaft (32) is located in the cabinet (30-2) of hopper (30), and is located at feed pipe (30-4) and discharging It manages between (30-5)；The left end of shaft (32) is connected with the output shaft of motor (31)；On the periphery at the axial middle part of shaft (32) With opening (32-4), and opening (32-4) is radially inwardly extending to be formed hatch (32-5), and hatch (32-5) is used In shaft (32) rotate when fall into and fall solid silicon material (7)；Baffle (33), stock guide (34) and the connecting plate (35) It is respectively positioned in the cabinet (30-2) of hopper (30)；The connecting plate (35) is fixedly connected on hopper (30) by its left and right end portions On cabinet (30-2)；The baffle (33) is fixedly connected on connecting plate (35) by its top, and left and right ends are close to cabinet (30-2), and be close on the periphery at the axial middle part of shaft (32)；The stock guide (34) is according to the side that the front is high and the back is low Formula setting, and its front side edge edge is fixedly connected on connecting plate (35) or is stationarily connected on cabinet (30-2), and its Plate body is located at the lower section of feed pipe (30-4)；Cabinet (30-2), shaft (32), baffle (33), stock guide (34) and connecting plate (35) setting, so that mutual gap is less than the partial size of solid silicon material (7)；The protective gas of the charging mechanism connects Entrance is arranged on the top of the cabinet of material storing box (2)；Material storing box (2) is located at the top of hopper (30), closed to be fixedly connected on material On case (30), and its discharge port is connected to feed pipe (30-4)；First valve (4) is arranged in the underlying of material storing box (2) Discharge outlet；The weighing signal output end of the Weighing mechanism (1), motor (31) and the first valve (4) respective control terminal are equal It is connect with master controller (8) electrical connection either wireless signal；The interface that vacuumizes of the charging mechanism is arranged in material storing box (2) bottom of the bottom of the cabinet either cabinet (30-2) of hopper (30).

2. the automatic feeding device of single crystal growing furnace according to claim 1, it is characterised in that: further include material buffer mechanism (5), the bell (100) of insulation cover (102), guiding tube (105) and single crystal growing furnace；The bell (100) is equipped with feed inlet (101)；The material buffer mechanism (5) includes cylinder (51), right baffle-plate (52) and right shell body (53)；The cylinder (1) Upper end is equipped with feed inlet, and lower end is equipped with discharge port；Equal, or both the difference of the quantity of the right baffle-plate (2) and right shell body (3) One piece, and the alternate setting of the two；Each piece of right baffle-plate (2) is fixedly connected on the inner wall of cylinder (1) in the way of right low left high On；Each piece of right shell body (3) is fixedly connected on the inner wall of cylinder (1) in the way of left low and right high, and is located at right baffle-plate (2) Opposite；There is a certain distance, which is greater than input in use consolidate between adjacent right baffle-plate (2) and right shell body (3) The partial size of body silicon material particle, and the lower edge of upper side baffle is located at the top of the plate body of adjacent lower side baffle；

In use, material buffer mechanism (5) is arranged on insulation cover (102), bottom is located in crucible (104), and the bottom From top close to the maximum height of the liquid level of scheduled liquid silicon material being actually reached；Guiding tube (105) is by its feed inlet from interior Survey is fixedly connected at the feed inlet (101) of bell (100), and its discharge port is located at the top of the feed inlet of cylinder (1), and connects The feed inlet of nearly cylinder (1)；The discharge nozzle (30-5) of charging mechanism (3) is connected to bell by discharge port detachable hermetic (100) the corresponding connecting line of feed inlet (101) is connected with guiding tube (105), and the corresponding connecting tube The discharge port on road is at the closed feed inlet (101) for being fixedly connected on bell (100) in outside.

3. the automatic feeding device of single crystal growing furnace according to claim 2, it is characterised in that: the material buffer mechanism (5) be material be quartz glass integral piece.

4. the automatic feeding device of single crystal growing furnace according to claim 1, it is characterised in that: the hopper (30) also has a left side Case lid (30-1) and right case lid (30-3)；The left case lid (30-1) and right case lid (30-3) are fixedly connected at cabinet (30-2) On；The shaft (32) includes left axle section (32-1), middle shaft part (32-2) and right axis section (32-3)；The left axle section (32-1) turns It is dynamic to be connected on left case lid (30-1)；The right axis section (32-3) is rotatably connected on right case lid (30-3)；Hatch (the 32- 5) in the inner cavity of cabinet (30-2), and it is located on the middle shaft part (32-2) of shaft (32).

5. the automatic feeding device of single crystal growing furnace according to claim 1, it is characterised in that: the protection of the charging mechanism Property gas access port setting material storing box (2) cabinet top；The interface that vacuumizes of the charging mechanism is arranged in storing The bottom of the cabinet of case (2).

6. the automatic feeding device of single crystal growing furnace according to claim 1, it is characterised in that: further include shaft coupling (7)；It is described Shaft (32) is sequentially connected on the output shaft of motor (31) by shaft coupling (7).

7. the automatic feeding device of single crystal growing furnace according to claim 1, it is characterised in that: further include liquid level follower (6)；The distance measuring signal output end of the liquid level follower (6) is electrically connected either wireless signal with master controller (8) and connects It connects.

8. according to claim 1 to the automatic feeding device of single crystal growing furnace described in one of 7, it is characterised in that: automatic feeding device It further include the second valve；The discharge outlet in the discharge nozzle (30-5) of hopper (30), and the control of the second valve is arranged in second valve End processed is connect with master controller (8) electrical connection either wireless signal.