CN201003079Y - Doping device for czochralski silicon preparation - Google Patents

Doping device for czochralski silicon preparation Download PDF

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Publication number
CN201003079Y
CN201003079Y CNU200620134195XU CN200620134195U CN201003079Y CN 201003079 Y CN201003079 Y CN 201003079Y CN U200620134195X U CNU200620134195X U CN U200620134195XU CN 200620134195 U CN200620134195 U CN 200620134195U CN 201003079 Y CN201003079 Y CN 201003079Y
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CN
China
Prior art keywords
doping
doper
instrument
main body
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU200620134195XU
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Chinese (zh)
Inventor
方峰
郑沉
王来福
安国祥
孙韶辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
You Yan Semi Materials Co., Ltd.
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Beijing General Research Institute for Non Ferrous Metals
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Priority to CNU200620134195XU priority Critical patent/CN201003079Y/en
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Publication of CN201003079Y publication Critical patent/CN201003079Y/en
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Abstract

A doper used in the Czochralski monocrystal silicon preparation comprises a main body, a quartz doper tool arranged in the main body. The main body comprises a vacuum corrugated tube, a moving stop. One end of the vacuum corrugated tube is connected with the moving stop, foming a seal. The stop is sleeved on a metal screw rod connected with a handle. In addition, the moving stop matches with a guide pole, and the other end of the vacuum corrugated tube is connected with a base board. The doper inserts into the socket at inner side of the moving stop. The device has the advantages of compact structure and operation convenience, with no need to separate the upper and lower furnace chambers or reload the seed.

Description

A kind of doper that is used for the pulling of silicon single crystal preparation
Technical field
The utility model relates to the doper in a kind of pulling of silicon single crystal preparation, particularly in crystal growing process melt is carried out adulterated device.
Background technology
Silicon single crystal is commonly used for the original material of working integrated circuit.The method of typical manufacture order crystal silicon is the Czochralski method, and a single crystal seed seed is immersed in the interior molten state silicon of quartz crucible.Slowly mention then, will constantly rotate crystal usually when mentioning, like this, monocrystalline just grows into bigger silicon wafer or crystal block.
When producing the high quality silicon wafer, some conditions that influence crystal growth are careful and are controlled, as temperature, pressure, impurity and pull rate.In addition, some impurity may be added in the molten state silicon as doping agent consciously in order to change product crystalline conductive characteristic.In order to obtain the more excellent crystalline material of conductive capability, need more impurity to be incorporated in the melt.But the impurity of greater concn also can unintentionally pollute molten state silicon sometimes, particularly forms impurity cluster on the surface of melt because impurity (group) thus entered the gap or the room in compressed lattice and destroyed crystal growth.
Therefore, be necessary to seek the destruction of the crystal growth that minimizing causes because of impurity and the Czochralski growing method that improves the doping efficiency of low melting point metal, the highly doped silicon monocrystalline that growth has the ideal resistance rate.
Summary of the invention
The purpose of this utility model provides a kind of doper that is used for the vertical pulling silicon preparation, be to the mix device of (or behind the melt back melt being mixed again) of melt in crystal growing process, this apparatus structure compactness, easy to operate, do not need to isolate furnace chamber and refitting seed crystal up and down.
For achieving the above object, the utility model is by the following technical solutions: this doper that is used for the pulling of silicon single crystal preparation, it comprises apparatus main body, a doping instrument that places main intravital quartzy material, described apparatus main body comprises: the vacuum ripple pipe, moving stop, one end of vacuum ripple pipe is connected with mobile plate washer, form sealing, barrier casing is on the metal screw mandrel, the metal screw mandrel connects handle, and mobile plate washer cooperates with guide pillar, and the other end of vacuum ripple pipe is connected with base plate: described doping instrument is connected on the cutting ferrule that is positioned at mobile plate washer inboard.
The utility model has the advantages that: the apparatus structure compactness, easy to operate, do not need to isolate furnace chamber and refitting seed crystal up and down.
Description of drawings
Fig. 1 a: the front view of doper main body
Fig. 1 b: the vertical view of Fig. 1 a
Fig. 1 c: the side-view of Fig. 1 a
Fig. 2: doper structural representation
Embodiment
Among Fig. 1 a, Fig. 1 b, Fig. 1 c, 2,5 is moving stop, one end of vacuum ripple pipe 2 is connected with mobile plate washer, form sealing, barrier casing is on metal screw mandrel 7, and 7 have scale, the metal screw mandrel connects handle 8, mobile plate washer cooperates with guide pillar 9, and the other end of vacuum ripple pipe is connected with base plate, is installed in the side top of the growth room of stove during use.Described doping instrument 1 is connected on the cutting ferrule 4 that is positioned at mobile plate washer inboard.6 is porthole.Metal screw mandrel 7 connects handle 8.The blind end of doping instrument 1 is placed with doping agent 3.
Before the shove charge, the doping agent 3 of low melting point, easily distillation is positioned over the blind end of doping instrument 1 of the elongated cylindrical of a quartzy material.When placing doping agent, blocky doping agent is put into from opening, and the blind end of doping instrument is downward, and the doping agent of the piece that is of moderate size (grain) shape falls into blind end.Drop for fear of doping agent, in the blind end of cylindric doping instrument, be provided with step.After the doping agent of process metering is put into the doping instrument, with doping instrument Rotate 180 degree, allow doping agent rest on the step carefully.
Establish a fixedly cutting ferrule in the mobile plate washer, be covered with a baffle plate, the step of doping instrument is positioned on the baffle plate of cutting ferrule.
Band handle metal leading screw drives mobile plate washer when rotating and moves up and down along guide pillar.When compression or stretching vacuum corrugated tube, the doping instrument is corresponding mobile also.
The opening end of quartzy doping instrument moves closer to melt during the compression vacuum corrugated tube, the radiations heat energy of melt makes solid dopant gasification, the distillation in the quartzy doping instrument, gasiform mixes and overflows from doping instrument opening end, thereby realizes melt is carried out gas phase doping.
Start the handle of doper when mixing, indicate with scale the position of quartzy doping instrument, by the position control solid dopant gasification of control scale, the speed of distillation; Can check doping agent gasification, distillation situation by porthole simultaneously.

Claims (3)

1, a kind of doper that is used for the pulling of silicon single crystal preparation, it is characterized in that: it comprises apparatus main body, a doping instrument that places main intravital quartzy material, described apparatus main body comprises: vacuum ripple pipe, moving stop, one end of vacuum ripple pipe is connected with mobile plate washer, form sealing, barrier casing is on the metal screw mandrel, and the metal screw mandrel connects handle, mobile plate washer cooperates with guide pillar, and the other end of vacuum ripple pipe is connected with base plate; Described doping instrument is connected on the cutting ferrule that is positioned at mobile plate washer inboard.
2, a kind of doper that is used for the pulling of silicon single crystal preparation according to claim 1, it is characterized in that: the doping instrument of quartzy material is an elongated cylindrical, and its end has an opening, and the other end is a blind end, is provided with step in the blind end.
3, a kind of doper that is used for the pulling of silicon single crystal preparation according to claim 2, it is characterized in that: the blind end step of placing doping agent in the described doping instrument is connected on the baffle plate of cutting ferrule, and doping instrument opening end down.
CNU200620134195XU 2006-10-30 2006-10-30 Doping device for czochralski silicon preparation Expired - Lifetime CN201003079Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU200620134195XU CN201003079Y (en) 2006-10-30 2006-10-30 Doping device for czochralski silicon preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU200620134195XU CN201003079Y (en) 2006-10-30 2006-10-30 Doping device for czochralski silicon preparation

Publications (1)

Publication Number Publication Date
CN201003079Y true CN201003079Y (en) 2008-01-09

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Family Applications (1)

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CNU200620134195XU Expired - Lifetime CN201003079Y (en) 2006-10-30 2006-10-30 Doping device for czochralski silicon preparation

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CN (1) CN201003079Y (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104928760A (en) * 2015-07-16 2015-09-23 中国电子科技集团公司第四十六研究所 Doping device and method for heavy doping boron or phosphorous cz-si single crystals
CN105951172A (en) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 Manufacturing method of N type/P type monocrystalline silicon crystal ingot
CN110331436A (en) * 2019-07-04 2019-10-15 浙江晶盛机电股份有限公司 A kind of multiple doper of one furnace of monocrystalline silicon growing furnace

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104928760A (en) * 2015-07-16 2015-09-23 中国电子科技集团公司第四十六研究所 Doping device and method for heavy doping boron or phosphorous cz-si single crystals
CN105951172A (en) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 Manufacturing method of N type/P type monocrystalline silicon crystal ingot
CN110331436A (en) * 2019-07-04 2019-10-15 浙江晶盛机电股份有限公司 A kind of multiple doper of one furnace of monocrystalline silicon growing furnace
CN110331436B (en) * 2019-07-04 2024-03-05 浙江晶盛机电股份有限公司 Single crystal silicon growth furnace one-furnace multiple doping device

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CU01 Correction of utility model patent

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Correct: Semiconductor materials, Limited by Share Ltd, Cathay Semiconductor Materials Ltd

Number: 02

Page: The title page

Volume: 24

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Number: 02

Volume: 24

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