CN2830424Y - Monocrystal producer for smelting high pureness metals - Google Patents
Monocrystal producer for smelting high pureness metals Download PDFInfo
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- CN2830424Y CN2830424Y CN 200520034196 CN200520034196U CN2830424Y CN 2830424 Y CN2830424 Y CN 2830424Y CN 200520034196 CN200520034196 CN 200520034196 CN 200520034196 U CN200520034196 U CN 200520034196U CN 2830424 Y CN2830424 Y CN 2830424Y
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- single crystal
- crucible
- growing furnace
- crystal growing
- seed rod
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Abstract
The utility model relates to a single crystal production device for smelting high-purity metals. The utility model is characterized in that a mechanical pump (1) of the single crystal production device is connected with the side of a single crystal furnace (7) by a diffusion pump (2); a seed rod (3) is arranged on the single crystal furnace; one end of the seed rod is inserted in a crucible (9) by the single crystal furnace, and the other end of the seed rod is connected with a crystal transformation electric machine to form a crystal transformation system (4); the crystal transformation system drives the seed rod to rotate and to move up and down; a crucible rod (5) is arranged below the single crystal furnace; one end of the crucible rod is connected with the bottom part of the crucible by the single crystal furnace; the other end of the crucible rod is connected with a crucible transformation electric machine to form a crucible transformation system (6); the crucible transformation system drives the crucible rod to rotate and to move up and down; a graphite heater (8) is arranged in the single crystal furnace; the crucible (9) is arranged in the graphite heater; extracted metals (10) are arranged in the crucible; an inert gas pipe (11) is arranged outside the single crystal furnace; the inert gas pipe is connected with and communicated with the single crystal furnace; electric control cabinets are respectively connected with a heating electric control circuit and a servo circuit to form the whole body of the utility model.
Description
One, technical field
The utility model relates to a kind of single crystal production equipment of refining hihg purity metal, belongs to high pure metal element single crystal refinement field in the metallurgy industry.
Two, background technology
In fields such as space flight, navigation, infrared and photoelectricity, all need the basic raw material of various high pure metals as key part.As be used for synthesis material tellurium, cadmium, zinc of tellurium, cadmium, the zinc wafer of infrared acquisition etc.Because the technology of device and these metals of technical requirements all need the above purity of 5N～7N.And the metal purity that traditional smelting technology can reach is generally about 4N, and with the components and parts that this raw material is made, its performance does not reach requirement far away.Chinese patent 87108007 disclosed " apparatus for growing profieled single crystals ", 95115160.6 disclosed " making the method for semiconducter device ", 90215080.4 disclose " growing apparatus of mercury iodide monocrystal " and 92104643.X disclosed " controllable bi-spherical Ge mono crystal growth method and mould ", obviously are the requirements that can not reach modern technologies.Along with high pure metal material purity demand is constantly increased, existing single crystal production unit unreasonable structure, temperature control is inaccurate, level of automation is low, the monocrystalline yield rate is low, can not adapt to the production needs of high pure metal single crystal far away, has restricted the development of this technology greatly.Therefore, it is extremely urgent to seek the method and apparatus of new refining hihg purity metal.
Three, summary of the invention
The purpose of this utility model is the single crystal production equipment that a kind of refining hihg purity metal is provided at the deficiencies in the prior art, and it has single crystal production equipment simple to operate, that control is accurate, level of automation is high, effectively improves the monocrystalline yield rate.
The purpose of this utility model is realized by following technical measures
The single crystal production equipment of refining hihg purity metal
The mechanical pump of single crystal production equipment is installed in the prime of diffusion pump, diffusion pump is installed in the prime of single crystal growing furnace, single crystal growing furnace is installed in the prime of electrical control cubicles, mechanical pump is connected conducting by diffusion pump with the monocrystalline furnace side, install seed rod on the single crystal growing furnace, seed rod one end inserts in the crucible by single crystal growing furnace, the seed rod the other end and brilliant rotating motor connect and compose crystalline substance and transfer from one department to another system, crystalline substance transfers from one department to another system driving seed rod rotation and moves up and down, single crystal growing furnace is the installing crucible pole down, crucible pole one end is connected with crucible bottom by single crystal growing furnace, the crucible pole the other end and crucible rotating motor connect and compose crucible and transfer from one department to another system, crucible transfers from one department to another system driving crucible pole rotation and moves up and down, and places graphite heater in the single crystal growing furnace, placement crucible in the graphite heater, place in the crucible by extracting metals, single crystal growing furnace peripheral hardware inert gas tube, inert gas tube is connected conducting with single crystal growing furnace, and electrical control cubicles connects and composes single crystal production equipment integral body with heating automatically controlled circuit and servo circuit respectively.
The heating automatically controlled circuit is controlled output current signal DL to silicon controlled rectifier phase shift trigger ZF, with silicon controlled rectifier D1～D6 triggering and conducting by Continental Europe OL; Power supply is connected conducting with well heater RL after transformer B1 step-down is by silicon controlled rectifier D1～D6 rectification, resistance R 1～R6 and capacitor C 1～C6 form capacitance-resistance RC and absorb circuit.
Servo circuit drives servomotor M1～M4 by programmable logic controller PLC, man-machine interface CCDR and servo-driver QD1～QD6; Connect switch power supply KGBY, the one tunnel connects man-machine interface CCDR and programmable logic controller PLC, and another road connects servo-driver QD1～QD6.
The utlity model has following advantage:
1, graphite heater adopts annular tubular structure, homogeneous heating, the Continental Europe controller to heating and temperature control accurately, accurate temperature control to 0.01 ℃.
2, level of automation height, the crystalline substance crucible that transfers from one department to another to unify transfers from one department to another system and drives by servomotor, and it is reliable to operate steadily, and vibrate for a short time, and the Continental Europe controller realizes that omnidistance analog automatization controls.
3, simple to operate, intuitive display, easy to use, the high pure metal yield rate height of adjusting.
Four, description of drawings
Fig. 1 is a single crystal production equipment structural representation.
1. mechanical pump, 2. diffusion pump, 3. seed rod, 4. crystalline substance transfers from one department to another system, 5. crucible pole, 6. crucible transfers from one department to another system, 7. single crystal growing furnace, 8. graphite heater, 9. crucible, 10. metal, 11. single crystal growing furnace peripheral hardware inert gas tubes.
Fig. 2 is heating automatically controlled circuit figure.
The control of OL Continental Europe, DL current signal, ZF silicon controlled rectifier phase shift trigger, B1 transformer, D1～D6 silicon controlled rectifier, RL well heater, R1～R6 resistance, C1～C6 electric capacity.
Fig. 3 is servo circuit figure.
The PLC programmable logic controller, CCDR man-machine interface, QD1～QD6 servo-driver, M1～M4 servomotor, KGBY switch power supply.
Five, embodiment
Below by embodiment the utility model is specifically described, but can not be interpreted as restriction the utility model protection domain.
Embodiment
The utlity model has simple in structure, easily manufactured, shown in Fig. 1～2.The mechanical pump 1 of the single crystal production equipment of refining hihg purity metal is installed in the prime of diffusion pump 2, diffusion pump is installed in the prime of single crystal growing furnace 7, single crystal growing furnace is installed in the prime of electrical control cubicles, mechanical pump is connected conducting by diffusion pump with the monocrystalline furnace side, installing seed rod 3 on the single crystal growing furnace, seed rod one end inserts in the crucible 9 by single crystal growing furnace, the seed rod the other end and brilliant rotating motor connect and compose crystalline substance and transfer from one department to another to unite 4, crystalline substance transfers from one department to another system and drives seed rod rotation and to-and-fro movement, single crystal growing furnace is installing crucible pole 5 down, crucible pole one end is connected with crucible bottom by single crystal growing furnace, the crucible pole the other end and crucible rotating motor connect and compose crucible and transfer from one department to another to unite 6, crucible transfers from one department to another system and drives crucible pole rotation and to-and-fro movement, places graphite heater 8 in the single crystal growing furnace, places crucible 9 in the graphite heater, place in the crucible by extracting metals 10, single crystal growing furnace peripheral hardware inert gas tube 11, inert gas tube is connected conducting with single crystal growing furnace, and electrical control cubicles connects and composes single crystal production equipment integral body with heating automatically controlled circuit and servo circuit respectively.
After the heating automatically controlled circuit is connected power supply, to silicon controlled rectifier phase shift trigger ZF, directly control silicon controlled rectifier D1～D6 triggering and conducting by Continental Europe control OL output 4～20mA current signal DL; The 380V power supply is depressurized to 50V through transformer B1, and the direct current of exporting 0～70V after the rectifying circuit rectification of being made up of silicon controlled rectifier D1～D6 is to well heater RL, and resistance R 1～R6 and capacitor C 1～C6 form capacitance-resistance RC and absorb circuit.
Servo circuit drives servomotor M1～M4 by programmable logic controller PLC, man-machine interface CCDR and servo-driver QD1～QD6, send instruction by man-machine interface in the working process, drive the servocontrol driving mechanism by instruction operation by programmable logic controller PLC according to the degree that presets again, when operation lifts program fast, all programs can be interrupted in system, system in man-machine interface control, has preset overcurrent, overvoltage and fault-operation protection program by manual control; DC12V is for man-machine interface CCDR and programmable logic controller PLC in 220V power connection switch power supply (KGBY) output, and DC24V is for servo-driver QD1～QD4.
The utility model is achieved in that
To expect that ingot puts into crucible 9, and by mechanical pump 1 and diffusion pump 2 single crystal growing furnace 7 be vacuumized the back and feed argon gas, graphite heater 8 heating, after waiting to expect the ingot material, start crystalline substance transfer from one department to another to unite 4 and crucible transfer from one department to another to unite 6, by seed rod 3 seedings, through necking down, shouldering, isometrical and draw the light operation after, cooling discharging then.
Claims (3)
1, the single crystal production equipment of refining hihg purity metal, it is characterized in that the mechanical pump (1) of this single crystal production equipment is installed in the prime of diffusion pump (2), diffusion pump is installed in the prime of single crystal growing furnace (7), single crystal growing furnace is installed in the prime of electrical control cubicles, mechanical pump is connected conducting by diffusion pump with the monocrystalline furnace side, install seed rod (3) on the single crystal growing furnace, seed rod one end inserts in the crucible (9) by single crystal growing furnace, the seed rod the other end and brilliant rotating motor connect and compose crystalline substance and transfer from one department to another system (4), crystalline substance transfers from one department to another system driving seed rod rotation and moves up and down, single crystal growing furnace is installing crucible pole (5) down, crucible pole one end is connected with crucible bottom by single crystal growing furnace, the crucible pole the other end and crucible rotating motor connect and compose crucible and transfer from one department to another system (6), crucible transfers from one department to another system driving crucible pole rotation and moves up and down, place graphite heater (8) in the single crystal growing furnace, place crucible (9) in the graphite heater, place in the crucible by extracting metals (10), single crystal growing furnace peripheral hardware inert gas tube (11), inert gas tube is connected conducting with single crystal growing furnace, and electrical control cubicles connects and composes single crystal production equipment integral body with heating automatically controlled circuit and servo circuit respectively.
2, the single crystal production equipment of refining hihg purity metal according to claim 1, it is characterized in that heating automatically controlled circuit by Continental Europe (OL) control output current signal (DL) to silicon controlled rectifier phase shift trigger (ZF), make the silicon controlled rectifier (triggering and conducting of D1～D6); (D1～D6) be connected conducting with well heater (RL) after the rectification, ((C1～C6) forms resistance capaciting absorpting circuit to resistance to power supply for R1～R6) and electric capacity by silicon controlled rectifier through transformer (B1) step-down.
3, the single crystal production equipment of refining hihg purity metal according to claim 1 is characterized in that (QD1～QD6) drives servomotor (M1～M4) to servo circuit by programmable logic controller (PLC), man-machine interface (CCDR) and servo-driver; Connect switch power supply (KGBY), the one tunnel connects man-machine interface (CCDR) and programmable logic controller (PLC), and another road connection servo-driver (QD1～QD6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520034196 CN2830424Y (en) | 2005-05-17 | 2005-05-17 | Monocrystal producer for smelting high pureness metals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520034196 CN2830424Y (en) | 2005-05-17 | 2005-05-17 | Monocrystal producer for smelting high pureness metals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2830424Y true CN2830424Y (en) | 2006-10-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520034196 Expired - Fee Related CN2830424Y (en) | 2005-05-17 | 2005-05-17 | Monocrystal producer for smelting high pureness metals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2830424Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445919A (en) * | 2011-12-20 | 2012-05-09 | 北京京仪世纪电子股份有限公司 | Electric control system for gallium arsenide single crystal furnace |
| CN103466668A (en) * | 2013-09-02 | 2013-12-25 | 四川大学 | High-temperature atmosphere revolving furnace and application thereof in preparation of AION (Anterior Ischemic Optic Neuropathy) powder |
| CN111893559A (en) * | 2020-07-02 | 2020-11-06 | 清远先导材料有限公司 | Preparation method of ultra-high-purity cadmium crystal |
-
2005
- 2005-05-17 CN CN 200520034196 patent/CN2830424Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445919A (en) * | 2011-12-20 | 2012-05-09 | 北京京仪世纪电子股份有限公司 | Electric control system for gallium arsenide single crystal furnace |
| CN103466668A (en) * | 2013-09-02 | 2013-12-25 | 四川大学 | High-temperature atmosphere revolving furnace and application thereof in preparation of AION (Anterior Ischemic Optic Neuropathy) powder |
| CN111893559A (en) * | 2020-07-02 | 2020-11-06 | 清远先导材料有限公司 | Preparation method of ultra-high-purity cadmium crystal |
| CN111893559B (en) * | 2020-07-02 | 2022-04-08 | 清远先导材料有限公司 | Preparation method of ultra-high-purity cadmium crystal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SICHUAN APOLLO SOLAR SCIENCE AND TECHNOLOGY DEVEL Free format text: FORMER OWNER: SICHUAN XINJU MINERAL RESOURCE DEVELOPMENT CO., LTD. Effective date: 20071019 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20071019 Address after: 610200, Sichuan, Shuangliu County, Chengdu Airport Road near all sections 72, 1-2 Patentee after: Sichuan Appollo solar energy technology development Limited by Share Ltd Address before: 610031, 11 building, elephant building, No. 90, Vanward Road, Sichuan, Chengdu Patentee before: Sichuan Xinju Mineral Industry Resource Development Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061025 Termination date: 20130517 |