CN109440184A - A kind of single crystal growing furnace continuous dosing conveying mechanism - Google Patents
A kind of single crystal growing furnace continuous dosing conveying mechanism Download PDFInfo
- Publication number
- CN109440184A CN109440184A CN201811553599.6A CN201811553599A CN109440184A CN 109440184 A CN109440184 A CN 109440184A CN 201811553599 A CN201811553599 A CN 201811553599A CN 109440184 A CN109440184 A CN 109440184A
- Authority
- CN
- China
- Prior art keywords
- outer housing
- conveying pipeline
- furnace chamber
- rotating mechanism
- main furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 239000002210 silicon-based material Substances 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- 239000003708 ampul Substances 0.000 claims description 6
- 239000011553 magnetic fluid Substances 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000000763 evoking effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000021050 feed intake Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to Czochralski silicon single crystal furnace equipment technical fields, more particularly, to a kind of single crystal growing furnace continuous dosing conveying mechanism.Including main furnace chamber, it is equipped with thermal field insulation barrel in main furnace chamber, is installed with silica crucible in thermal field insulation barrel；Main furnace chamber and thermal field insulation barrel side wall are equipped with feeding port.Valve is equipped at main furnace chamber side wall feeding port；Batch charging mechanism includes cylindric outer housing, and outer housing front end is equipped with bellows and is used for connecting valve；Outer housing inner front side is equipped with conveying pipeline, is equipped with support device in the outer housing below conveying pipeline；Outer housing bottom rear is equipped with straight-line motion mechanism, and straight-line motion mechanism is equipped with rotating mechanism mounting plate；Rotating mechanism mounting plate is equipped with rotating mechanism and feeding device, and conveying pipeline rear end is connected with rotating mechanism, and backside port connects feeding device.Present invention saves the time, the silicon liquid fluctuation evoked when polycrystalline silicon material is fallen into silica crucible is reduced, production efficiency greatly improved, silica crucible utilization rate is improved and effectively reduces cost.
Description
Technical field
The present invention relates to Czochralski silicon single crystal furnace equipment technical fields, more particularly, to a kind of single crystal growing furnace continuous dosing conveyer
Structure.
Background technique
During single crystal growing furnace Grown by CZ Method, polycrystalline silicon raw material is put into progress melt, crystal pulling in silica crucible.Single crystal growing furnace is drawn
After the completion of crystalline substance, the production of the new furnace of preparation needs to do many many and diverse previous works, including blowing out cooling, prepurging, charging, pumping are very
The processes such as sky, material, these previous works waste a large amount of time and energy consumption.Silica crucible itself is that have using the longevity simultaneously
Life.External continuous dosing device can be used after the completion of a silicon single crystal is drawn in single crystal growing furnace, continues to put into polycrystalline silicon material,
Silica crucible utilization rate is improved, while drawing more crystal bars.
Summary of the invention
The technical problem to be solved by the present invention is to overcome deficiency in the prior art, provide a kind of single crystal growing furnace continuous dosing
Conveying mechanism.
In order to solve the above technical problems, the solution that the present invention uses is:
A kind of single crystal growing furnace continuous dosing conveying mechanism, including main furnace chamber are provided, are equipped with thermal field insulation barrel, thermal field in main furnace chamber
Silica crucible is installed in insulation barrel；It further include batch charging mechanism；
Main furnace chamber and thermal field insulation barrel side wall are equipped with feeding port, and feeding port feeds intake angle as horizontal or small angle inclination.
Valve is equipped at main furnace chamber side wall feeding port；
Batch charging mechanism includes cylindric outer housing, and outer housing front end is equipped with bellows and is used for connecting valve；In outer housing
It is equipped with conveying pipeline on front side of portion, is equipped with support device in the outer housing below conveying pipeline, is used to support conveying pipeline；Behind outer housing bottom
Side is equipped with straight-line motion mechanism, and straight-line motion mechanism is equipped with rotating mechanism mounting plate；Rotating mechanism mounting plate is equipped with rotation
Mechanism and feeding device, conveying pipeline rear end are connected with rotating mechanism, and backside port connects feeding device.
As an improvement valve is the cold pneumatic gate valve of vacuum water.
As an improvement support device includes the support base being set to below conveying pipeline and the support being set on conveying pipeline
Set.
As an improvement support sleeve is polytetrafluoroethylene (PTFE) support sleeve；Feeding device material is quartz or polytetrafluoroethylene (PTFE).
As an improvement straight-line motion mechanism includes screw rod, screw rod end is connect with transmission shaft one end, and transmission shaft is another
End passes through the output axis connection of bevel gear and motor, is additionally provided with magnetic fluid on transmission shaft.
As an improvement straight-line motion mechanism is set in outer housing by mounting plate.
As an improvement the intermeshing pinion gear of rotating mechanism and gear wheel, motor are connected with pinion gear, conveying pipeline
It is connected with gear wheel.
As an improvement conveying pipeline is quartz ampoule, quartz ampoule interior surface is smooth or is equipped with helicla flute.
As an improvement feeding device includes feed pipe, it is provided with feed inlet on the outer housing right above rotating mechanism, into
Material mouth is connected with feed pipe one end, and the feed pipe other end connects feed bin.
As an improvement outer housing is equipped with window, for understanding the delivery situation of polycrystalline silicon material in conveying pipeline.
Compared with prior art, the solution have the advantages that:
The present invention can realize that charging, crystal pulling save continuously to grow more crystal in the case where not needing blowing out
Blowing out is cooling, wipe furnace, charge, vacuumize, material and etc. needed for time, reduce polycrystalline silicon material and fall into Shi Ji in silica crucible
Silicon liquid fluctuation in the silica crucible risen, greatly improved production efficiency, improves silica crucible utilization rate and effectively reduces cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the continuous dosing conveying mechanism in the present invention.
Fig. 2 is the structural schematic diagram of the straight-line motion mechanism in the present invention.
Fig. 3 is the structural schematic diagram of the rotating mechanism in the present invention.
Fig. 4 is the structural schematic diagram of the support device in the present invention.
Appended drawing reference: the main furnace chamber of 1-, 2- thermal field insulation barrel, 3- silica crucible, 4- valve, 5- bellows, 6- conveying pipeline, 7-
Support device, 8- mounting plate, 9- rotating mechanism mounting plate, 10- straight-line motion mechanism, 11- outer housing, 12- feeding device, 13-
Feed bin, 14- rotating mechanism, 16- screw rod, 17- transmission shaft, 18- magnetic fluid, 19- bevel gear, 20,22- motor, 21- pinion gear,
23- gear wheel, 24- support sleeve, 25- support base.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail.
As shown in Figure 1, a kind of single crystal growing furnace continuous dosing conveying mechanism, including main furnace chamber 1, the main interior thermal field that is equipped with of furnace chamber 1 are protected
Warm bucket 2 is installed with silica crucible 3 in thermal field insulation barrel 2.It further include batch charging mechanism.
Main furnace chamber 1 and 2 side wall of thermal field insulation barrel are equipped with feeding port, are equipped with valve 4 at main 1 side wall feeding port of furnace chamber.Valve
Door 4 is the cold pneumatic gate valve of vacuum water.
Batch charging mechanism includes cylindric outer housing 11, and 11 front end of outer housing is equipped with bellows 5 and is used for connecting valve 4.Outside
11 inner front side of shell is equipped with conveying pipeline 6, and conveying pipeline 6 is quartz ampoule, and quartz ampoule interior surface is smooth or is equipped with helicla flute.Conveying
It is equipped with support device 7 in the outer housing 11 of 6 lower section of pipe, is used to support conveying pipeline 6.As shown in figure 4, support device 7 includes being set to
The support base 25 of 6 lower section of conveying pipeline and the support sleeve 24 being set on conveying pipeline 6.Support sleeve 24 is polytetrafluoroethylene (PTFE) support sleeve
24.11 bottom rear of outer housing is equipped with straight-line motion mechanism 10, and straight-line motion mechanism 10 is set to outer housing 11 by mounting plate 8
It is interior.As shown in Fig. 2, straight-line motion mechanism 10 includes screw rod, screw rod end is connect with 17 one end of transmission shaft, 17 other end of transmission shaft
By the output axis connection of bevel gear 19 and motor 20, magnetic fluid 18 is additionally provided on transmission shaft 17.
Straight-line motion mechanism 10 is equipped with rotating mechanism mounting plate 9.Rotating mechanism mounting plate 9 is equipped with 14 He of rotating mechanism
Feeding device 12,6 rear end of conveying pipeline are connected with rotating mechanism 14, and backside port connects feeding device 12.As shown in figure 3, rotation
Mechanism 14 includes intermeshing pinion gear 21 and gear wheel 23, and motor 22 is connected with pinion gear 21, conveying pipeline 6 and gear wheel
23 are connected.Feeding device 12 includes feed pipe, is provided with feed inlet on the outer housing 11 right above rotating mechanism 14, feed inlet with into
Expects pipe one end is connected, and the feed pipe other end connects feed bin 13.
Outer housing 11 is equipped with window, for understanding the delivery situation of polycrystalline silicon material in conveying pipeline 6.
The course of work of the invention are as follows:
Silicon liquid is discontented in silica crucible when being fed or when needing to feed intake in crystal pulling, first by bellows 5 in
Valve 4 on main furnace chamber 1 is attached, and is vacuumized to outer housing 11 and applying argon gas operates, internal environment, which reaches, properly to be wanted
When asking, is controlled by pneumatic device and open valve 4.Starting straight-line motion mechanism 10 stretches out conveying pipeline 6 and moves in main furnace chamber 1
Portion stops straight-line motion mechanism 10 when conveying pipeline 6 moves to main 1 place inside of furnace chamber.Start rotating mechanism 14, band
Dynamic conveying pipeline 6 carries out rotary work.Start feed bin 13, falls into polycrystalline silicon material finally into conveying pipeline 6 along feeding mechanism 12
In silica crucible 3, after the completion of feeding intake, stops feed bin 13 and work, observe polycrystalline silicon material by outer housing external windows and do not remain
After in conveying pipeline 6, mechanism of stopping rotating 14 while starting straight-line motion mechanism 10 conveying pipeline 6 is retracted in main casing 11
Portion.Valve 4 is closed, connection of the bellows 5 between valve 4 is unclamped, completes the process that feeds intake.
It is finally noted that the above enumerated are only specific embodiments of the present invention.It is clear that the invention is not restricted to
Upper embodiment can also have many variations.Those skilled in the art can from present disclosure directly export or
All deformations associated, are considered as protection scope of the present invention.
Claims (9)
1. a kind of single crystal growing furnace continuous dosing conveying mechanism, including main furnace chamber, main furnace chamber is interior to be equipped with thermal field insulation barrel, thermal field insulation barrel
Inside it is installed with silica crucible；It is characterized in that, further including batch charging mechanism；
The main furnace chamber and thermal field insulation barrel side wall are equipped with feeding port, are equipped with valve at main furnace chamber side wall feeding port；
The batch charging mechanism includes cylindric outer housing, and outer housing front end is equipped with bellows and is used for connecting valve；In outer housing
It is equipped with conveying pipeline on front side of portion, is equipped with support device in the outer housing below conveying pipeline, is used to support conveying pipeline；Behind outer housing bottom
Side is equipped with straight-line motion mechanism, and straight-line motion mechanism is equipped with rotating mechanism mounting plate；Rotating mechanism mounting plate is equipped with rotation
Mechanism and feeding device, conveying pipeline rear end are connected with rotating mechanism, and backside port connects feeding device.
2. mechanism according to claim 1, which is characterized in that the valve is the cold pneumatic gate valve of vacuum water.
3. mechanism according to claim 1, which is characterized in that the support device includes the branch below conveying pipeline
Support seat and the support sleeve being set on conveying pipeline.
4. mechanism according to claim 1, which is characterized in that the support sleeve is polytetrafluoroethylene (PTFE) support sleeve.
5. mechanism according to claim 1, which is characterized in that the straight-line motion mechanism includes screw rod, screw rod end with
The connection of transmission shaft one end, the transmission shaft other end pass through the output axis connection of bevel gear and motor, are additionally provided with magnetic fluid on transmission shaft.
6. mechanism according to claim 1, which is characterized in that the rotating mechanism includes intermeshing pinion gear and big
Gear, motor are connected with pinion gear, and conveying pipeline is connected with gear wheel.
7. mechanism according to claim 1, which is characterized in that the conveying pipeline is quartz ampoule, quartz ampoule interior surface light
Slide or be equipped with helicla flute.
8. mechanism according to claim 1, which is characterized in that the feeding device includes feed pipe, rotating mechanism just on
It is provided with feed inlet on the outer housing of side, feed inlet is connected with feed pipe one end, and the feed pipe other end connects feed bin.
9. mechanism according to claim 1, which is characterized in that the outer housing is equipped with window, for understanding conveying pipeline
The delivery situation of interior polycrystalline silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811553599.6A CN109440184A (en) | 2018-12-19 | 2018-12-19 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811553599.6A CN109440184A (en) | 2018-12-19 | 2018-12-19 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109440184A true CN109440184A (en) | 2019-03-08 |
Family
ID=65559429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811553599.6A Pending CN109440184A (en) | 2018-12-19 | 2018-12-19 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109440184A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411241A (en) * | 2022-03-11 | 2022-04-29 | 浙江精功科技股份有限公司 | Single crystal furnace feeding device |
| CN115369490A (en) * | 2022-09-26 | 2022-11-22 | 浙江求是半导体设备有限公司 | Feeding device and method for crystal growth furnace |
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| US20180237948A1 (en) * | 2015-08-20 | 2018-08-23 | Sunedison Semiconductor Limited (Uen201334164H) | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
| CN108884588A (en) * | 2016-02-25 | 2018-11-23 | 各星有限公司 | Feed system for crystal pulling system |
| CN209652473U (en) * | 2018-12-19 | 2019-11-19 | 浙江晶盛机电股份有限公司 | Single crystal growing furnace continuous dosing conveying mechanism |
-
2018
- 2018-12-19 CN CN201811553599.6A patent/CN109440184A/en active Pending
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| CN103597127A (en) * | 2011-04-20 | 2014-02-19 | Gt高级锆石有限责任公司 | Side feed system for Czochralski growth of silicon ingots |
| CN102312285A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | External continuous feeding mechanism for monocrystal furnace |
| CN103451722A (en) * | 2013-08-06 | 2013-12-18 | 浙江晶盛机电股份有限公司 | External continuous feeder capable of being shared by multiple coil bases |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411241A (en) * | 2022-03-11 | 2022-04-29 | 浙江精功科技股份有限公司 | Single crystal furnace feeding device |
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| CN115369490A (en) * | 2022-09-26 | 2022-11-22 | 浙江求是半导体设备有限公司 | Feeding device and method for crystal growth furnace |
| CN115369490B (en) * | 2022-09-26 | 2023-02-21 | 浙江求是半导体设备有限公司 | Feeding device and method for crystal growth furnace |
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