CN219951286U - Continuous charging silicon single crystal furnace - Google Patents
Continuous charging silicon single crystal furnace Download PDFInfo
- Publication number
- CN219951286U CN219951286U CN202321481484.7U CN202321481484U CN219951286U CN 219951286 U CN219951286 U CN 219951286U CN 202321481484 U CN202321481484 U CN 202321481484U CN 219951286 U CN219951286 U CN 219951286U
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- Prior art keywords
- single crystal
- silicon single
- crystal furnace
- hopper
- fixedly connected
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005303 weighing Methods 0.000 claims abstract description 18
- 238000003860 storage Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of silicon single crystal furnaces, in particular to a continuous feeding silicon single crystal furnace, which comprises a silicon single crystal furnace main body, wherein a feeding mechanism is fixedly arranged on the silicon single crystal furnace main body, a hopper is fixedly arranged on the feeding mechanism, an annular groove is formed in the hopper, a sliding block is arranged in the annular groove, a material guide plate is fixedly connected to the sliding block, a bearing plate is fixedly connected to the material guide plate, an opening is formed in the bearing plate, a material guide pipe corresponding to the opening is fixedly connected to the bearing plate, the material guide plate and the bearing plate are movably arranged through the annular groove and the sliding block, so that a weighing sensor can weigh the bearing plate better, the accuracy of the weighing sensor is improved, a motor is started through the weighing sensor and a ball screw is driven to rotate, the ball screw drives a driving rack to horizontally move through a nut, and the driving rack drives a driven rack to horizontally move through a gear, so that the opening is in an opening state, and quantitative feeding is realized.
Description
Technical Field
The utility model relates to the technical field of silicon single crystal furnaces, in particular to a continuous feeding silicon single crystal furnace.
Background
The single crystal furnace is a device for melting polycrystalline materials such as polysilicon and the like in an inert gas environment by using a graphite heater, and growing dislocation-free single crystals by using a Czochralski method, wherein the diameter of the single crystals can be influenced by factors such as temperature, lifting speed and rotating speed, crucible tracking speed and rotating speed, flow rate of shielding gas and the like in the growing process.
A continuous feeding and conveying mechanism of a single crystal furnace, which is proposed by Chinese bulletin No. CN 209652473U. Comprises a main furnace chamber, wherein a thermal field heat-preserving barrel and a quartz crucible are arranged in the main furnace chamber; and the side walls of the main furnace chamber and the thermal field heat-insulating barrel are provided with feeding ports. A valve is arranged at a material inlet on the side wall of the main furnace chamber; the feeding mechanism comprises a cylindrical outer shell, and a corrugated pipe is arranged at the front end of the outer shell and used for connecting a valve; a conveying pipe is arranged at the front side inside the outer shell, and a supporting device is arranged in the outer shell below the conveying pipe; the rear side of the bottom of the outer shell is provided with a linear motion mechanism, and a rotary mechanism mounting plate is arranged on the linear motion mechanism; the rotary mechanism mounting plate is provided with a rotary mechanism and a feeding device, the rear end of the conveying pipe is connected with the rotary mechanism, and the rear side port is connected with the feeding device. The utility model saves time, reduces silicon liquid fluctuation excited when the polysilicon material falls into the quartz crucible, greatly improves the production efficiency, improves the utilization rate of the quartz crucible and effectively reduces the cost.
According to the technical scheme, when the batch is fed, the total amount of each batch is different, so that the total amount of raw materials processed by the silicon single crystal furnace is different, and the total amount of each finished product is different.
Disclosure of Invention
The utility model aims to solve the problem that the quality of finished products is easily influenced due to the fact that the quantity of raw materials is large because the processing conditions in a silicon single crystal furnace are unchanged when the materials are fed in the prior art, and provides a continuous feeding silicon single crystal furnace.
In order to achieve the above purpose, the present utility model adopts the following technical scheme:
the continuous charging silicon single crystal furnace comprises a silicon single crystal furnace main body, wherein a feeding mechanism is fixedly arranged on the silicon single crystal furnace main body, a hopper is fixedly arranged on the feeding mechanism, an annular groove is formed in the hopper, a sliding block is arranged in the annular groove, a material guide plate is fixedly connected to the sliding block, a bearing plate is fixedly connected to the material guide plate, an opening is formed in the bearing plate, a material guide pipe corresponding to the opening is fixedly connected to the bearing plate, and a storage cavity is formed in the bearing plate;
the silicon single crystal furnace comprises a silicon single crystal furnace main body, wherein a mounting flange is integrally connected to the silicon single crystal furnace main body, and a weighing sensor which is movably propped against a bearing plate is fixedly arranged on the mounting flange;
a closing mechanism for closing the opening is arranged in the hopper.
Preferably, the sliding block is slidably sleeved in the annular groove, and the sliding block is of an annular structure.
Preferably, the closing mechanism comprises a motor fixedly installed in the hopper and in telecommunication connection with the weighing sensor, a ball screw is fixedly connected to the output end of the motor, a nut is installed on the ball screw in a matched mode, a driving rack is fixedly connected to the nut, a driven rack is arranged in the storage cavity, a rotating shaft is installed in the hopper through bearing rotation, a gear in meshed connection with the driving rack and the driven rack is fixedly sleeved on the rotating shaft, a guide groove is formed in the driven rack, and a guide block corresponding to the guide groove is fixedly connected to the storage cavity.
Preferably, the ball screw is rotatably mounted on the hopper through a bearing, and the ball screw is horizontally arranged at a position below the driving rack.
Preferably, the rotating shaft is horizontally arranged at two sides of the material guiding pipe, the driving rack is horizontally arranged at the lower part of the mounting flange, and the bearing plate is provided with a movable through hole for movably sleeving the gear.
Preferably, the guide groove is horizontally arranged on the upper surface of the driven rack, and the guide block is in sliding connection with the guide groove.
Compared with the prior art, the utility model has the following advantages:
1. according to the utility model, the ring groove and the sliding block enable the material guide plate and the bearing plate to be movably arranged, so that the weighing sensor can weigh the bearing plate better, and the accuracy of the weighing sensor is improved.
2. According to the quantitative feeding device, the motor is started through the weighing sensor and drives the ball screw to rotate, the ball screw drives the driving rack to horizontally move through the nut, and the driving rack drives the driven rack to horizontally move through the gear, so that the opening is in an open state, and quantitative feeding is achieved.
Drawings
FIG. 1 is a schematic diagram of a continuous feed silicon single crystal furnace according to the present utility model;
FIG. 2 is a schematic diagram of an enlarged A partial structure of a continuous feed silicon single crystal furnace according to the present utility model;
fig. 3 is a schematic diagram of a connection structure between a ball screw and a nut of a continuous feeding silicon single crystal furnace according to the present utility model.
In the figure: 1. a silicon single crystal furnace main body; 2. a feeding mechanism; 3. a hopper; 4. a ring groove; 5. a slide block; 6. a material guide plate; 7. a carrying plate; 8. an opening; 9. a material guiding pipe; 10. a storage chamber; 11. a mounting flange; 12. a weighing sensor; 13. a motor; 14. a ball screw; 15. a nut; 16. a driving rack; 17. a driven rack; 18. a rotating shaft; 19. a gear; 20. a guide groove; 21. and a guide block.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.
Referring to fig. 1 to 3, a continuous charging silicon single crystal furnace includes a silicon single crystal furnace main body 1, and a feeding mechanism 2 is fixedly installed on the silicon single crystal furnace main body 1, and it should be noted that: the feeding mechanism 2 is a prior known technology of a comparison document in the background art;
the feeding mechanism 2 is fixedly provided with a hopper 3, the hopper 3 is provided with a ring groove 4, a sliding block 5 is sleeved in the ring groove 4 in a sliding manner, the sliding block 5 is of an annular structure, the sliding block 5 is fixedly connected with a material guiding plate 6, the material guiding plate 6 is fixedly connected with a bearing plate 7, and the material guiding plate 6 and the bearing plate 7 can vertically lift through the ring groove 4 and the sliding block 5;
an opening 8 is formed in the bearing plate 7, a material guide pipe 9 which is arranged corresponding to the opening 8 is fixedly connected to the bearing plate 7, and a containing cavity 10 is formed in the bearing plate 7;
the silicon single crystal furnace main body 1 is integrally connected with the mounting flange 11, the mounting flange 11 is fixedly provided with the weighing sensor 12 which is movably propped against the bearing plate 7, and the bearing plate 7 is movably arranged, so that the weighing sensor 12 can weigh the bearing plate 7 better, and the use effect of the weighing sensor 12 is improved;
the hopper 3 is provided with a sealing mechanism for sealing the opening 8, and the hopper 3 can quantitatively discharge materials by matching the sealing mechanism with the weighing sensor 12, so that the total amount of raw materials entering the silicon single crystal furnace main body 1 each time is ensured to be the same;
further description: the sealing mechanism comprises a motor 13 which is fixedly arranged in the hopper 3 and is in telecommunication connection with the weighing sensor 12, the model of the motor 13 is MR-J2S-200B, the output end of the motor 13 is fixedly connected with a ball screw 14, the ball screw 14 is rotatably arranged on the hopper 3 through a bearing, a nut 15 is arranged on the ball screw 14 in a matching way, and a driving rack 16 is fixedly connected on the nut 15;
the ball screw 14 is horizontally arranged below the driving rack 16, the driving rack 16 is horizontally arranged below the mounting flange 11, the receiving cavity 10 is internally provided with a driven rack 17, and the hopper 3 is rotatably provided with a rotating shaft 18 through a bearing;
the rotating shaft 18 is horizontally arranged at two sides of the material guiding pipe 9, the rotating shaft 18 is fixedly sleeved with a gear 19 in meshed connection with the driving rack 16 and the driven rack 17, the bearing plate 7 is provided with a movable through hole for movably sleeved with the gear 19, and a movable space can be provided for the gear 19 through the movable through hole;
the guide way 20 has been seted up to driven rack 17 upper surface position, and driven rack 17 has been seted up to the guide way 20 level, accomodates fixedly connected with in the chamber 10 and corresponds the guide block 21 that sets up with guide way 20, guide block 21 and guide way 20 sliding connection provide the direction support for driven rack 17 through guide way 20 and guide block 21 to avoid raw materials extrusion driven rack 17, make driven rack 17 take place the position skew, help guaranteeing the meshing between driven rack 17 and the gear 19 and be connected.
The utility model can explain its functional principle by the following modes of operation:
the raw materials are thrown onto the bearing plate 7, the bearing plate 7 is extruded by the weighing sensor 12, when the weight of the raw materials reaches the standard, the motor 13 is started by the weighing sensor 12 to drive the ball screw 14 to rotate, so that the two nuts 15 move horizontally inwards, the nuts 15 drive the driving rack 16 to move horizontally, the driving rack 16 drives the gear 19 to rotate, the gear 19 drives the driven rack 17 to move horizontally, the guide block 21 moves relatively in the guide groove 20, the raw materials can enter the guide pipe 9 through the opening 8, and the raw materials enter the feeding mechanism 2 through the guide pipe 9;
when the weight sensor 12 senses that the weight is reduced to a set value, the motor 13 is started to drive the ball screw 14 to reversely rotate, so that the opening 8 is closed.
The foregoing is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical scheme of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.
Claims (6)
1. The utility model provides a continuous feeding silicon single crystal furnace, includes silicon single crystal furnace main part (1), its characterized in that, fixedly mounted feeding mechanism (2) on silicon single crystal furnace main part (1), fixedly provided with hopper (3) on feeding mechanism (2), annular (4) have been seted up on hopper (3), be provided with slider (5) in annular (4), fixedly connected with stock guide (6) on slider (5), fixedly connected with loading board (7) on stock guide (6), opening (8) have been seted up on loading board (7), fixedly connected with and opening (8) correspond the passage (9) that set up on loading board (7), storage chamber (10) have been seted up in loading board (7);
the silicon single crystal furnace is characterized in that a mounting flange (11) is integrally connected to the silicon single crystal furnace main body (1), and a weighing sensor (12) which is movably propped against the bearing plate (7) is fixedly mounted on the mounting flange (11);
a closing mechanism for closing the opening (8) is arranged in the hopper (3).
2. The continuous feeding silicon single crystal furnace according to claim 1, wherein the sliding block (5) is slidably sleeved in the annular groove (4), and the sliding block (5) is of an annular structure.
3. The continuous feeding silicon single crystal furnace according to claim 1, wherein the sealing mechanism comprises a motor (13) which is fixedly installed in a hopper (3) and is in telecommunication connection with a weighing sensor (12), the output end of the motor (13) is fixedly connected with a ball screw (14), a nut (15) is installed on the ball screw (14) in a matched mode, a driving rack (16) is fixedly connected on the nut (15), a driven rack (17) is arranged in a storage cavity (10), a rotating shaft (18) is installed in the hopper (3) in a rotating mode through a bearing, a gear (19) which is in meshed connection with the driving rack (16) and the driven rack (17) is fixedly sleeved on the rotating shaft (18), a guide groove (20) is formed in the driven rack (17), and a guide block (21) which is arranged corresponding to the guide groove (20) is fixedly connected in the storage cavity (10).
4. A continuous feed silicon single crystal furnace according to claim 3, wherein the ball screw (14) is rotatably mounted on the hopper (3) through a bearing, and the ball screw (14) is horizontally arranged below the driving rack (16).
5. The continuous feeding silicon single crystal furnace according to claim 4, wherein the rotating shaft (18) is horizontally arranged at two sides of the material guiding pipe (9), the driving rack (16) is horizontally arranged below the mounting flange (11), and the bearing plate (7) is provided with a movable through hole for movably sleeving the gear (19).
6. A continuous feed silicon single crystal furnace according to claim 3, wherein the guide groove (20) is horizontally arranged on the upper surface of the driven rack (17), and the guide block (21) is slidably connected with the guide groove (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321481484.7U CN219951286U (en) | 2023-06-12 | 2023-06-12 | Continuous charging silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321481484.7U CN219951286U (en) | 2023-06-12 | 2023-06-12 | Continuous charging silicon single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219951286U true CN219951286U (en) | 2023-11-03 |
Family
ID=88553335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321481484.7U Active CN219951286U (en) | 2023-06-12 | 2023-06-12 | Continuous charging silicon single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219951286U (en) |
-
2023
- 2023-06-12 CN CN202321481484.7U patent/CN219951286U/en active Active
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