CN115369490A - Feeding device and method for crystal growth furnace - Google Patents
Feeding device and method for crystal growth furnace Download PDFInfo
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- CN115369490A CN115369490A CN202211315522.1A CN202211315522A CN115369490A CN 115369490 A CN115369490 A CN 115369490A CN 202211315522 A CN202211315522 A CN 202211315522A CN 115369490 A CN115369490 A CN 115369490A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention discloses a feeding device of a crystal growing furnace, which comprises: a crystal growth furnace; a frame; a crucible; a feeding device; the raw materials comprise a first volume and a second volume, the first volume is smaller than the second volume, and after the feeding of the raw materials with the first volume is finished, the feeding device feeds the raw materials with the second volume; the crucible is provided with a driving device connected with the crucible, and when the first volume of raw materials is delivered into the crucible along the feeding device, the driving device drives the crucible to rotate around the rotation center line of the crucible at a constant speed at a first rotation speed, so that the first volume of raw materials is laid at the bottom of the crucible; the driving device drives the crucible to rotate at a second rotating speed in an accelerating mode, and the driving device drives the crucible to rotate between a first rotating speed and a second rotating speed in a reciprocating and alternating mode, and the first rotating speed is smaller than the second rotating speed. Through the arrangement, the abrasion of the raw materials to the crucible is reduced, and the service life of the crucible is prolonged. In addition, the stacking efficiency of the raw materials in the crucible is improved, and the growth of crystals is facilitated.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to a feeding device and a feeding method for a crystal growth furnace.
Background
In the feeding device and the feeding method of the crystal growth furnace in the prior art, a large amount of silicon material is conveyed into a crucible through the feeding device, so that the silicon material in the crucible is melted and a crystal product is obtained.
In the feeding process, because the feeding device has a certain height difference between the distance from the crucible to the crucible, the solid silicon material with a larger volume directly impacts the crucible in the falling process, so that the crucible is easy to crack or damage, and the crucible needs to be periodically checked or replaced to avoid the damage of the crucible under the long-time impact.
After the heating treatment, the molten silicon material attached to the crucible is unevenly distributed, so that the crystallization efficiency in the crucible is reduced. In addition, when a large volume of silicon material falls into the crucible, the molten silicon material is easily splashed.
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide a feeding device of a crystal growth furnace, which can optimize the crystal growth efficiency.
In order to realize the purpose, the invention adopts the following technical scheme:
a feeding device of a crystal growth furnace comprises the crystal growth furnace, a frame, a crucible and a feeding device; the crystal growth furnace is at least partially arranged on the frame; the crucible is arranged in the crystal growth furnace; the feeding device is connected with the crystal growth furnace and used for feeding raw materials into the crucible; the raw materials comprise a first volume and a second volume, the first volume is smaller than the second volume, and after the feeding of the raw materials with the first volume is finished, the feeding device feeds the raw materials with the second volume; the crucible is provided with a driving device connected with the crucible, and when the first volume of raw materials are delivered into the crucible along the feeding device, the driving device drives the crucible to rotate around the rotation center line of the crucible at a constant speed at a first rotation speed so as to lay the first volume of raw materials at the bottom of the crucible; at the moment, the driving device drives the crucible to rotate at a second rotation speed in an accelerating way, and the driving device drives the crucible to rotate in a reciprocating and alternating way between the first rotation speed and the second rotation speed, wherein the first rotation speed is less than the second rotation speed.
Further, the rotational speed of the crucible about its own rotational center line varies between the first rotational speed and the second rotational speed with a sinusoidal cycle.
Further, the driving device drives the crucible to rotate around the rotation central line of the crucible, and the driving device also drives the crucible to linearly reciprocate along the direction parallel to the rotation central line of the crucible.
Further, when the crucible rotates at a first rotation speed at a constant speed, the height difference between the crucible and the feeding device, which extends along the direction of the rotation center line of the crucible, is set to be H1; when the crucible is reciprocated and alternated between the first rotation speed and the second rotation speed, the height difference between the crucible and the feeding device is set to be H2, and H1 is larger than H2.
Furthermore, a detection device for detecting the volume of the raw materials is arranged in the crystal growth furnace, and the crystal growth furnace reduces the oxidation of the raw materials by releasing protective gas; when the volume of the raw materials is increased, the detection device outputs an adjusting signal to the crystal growth furnace, and the crystal growth furnace adjusts the flow of the protective gas released in the crystal growth furnace according to the adjusting signal.
Further, the difference between the second rotational speed and the first rotational speed is 1rpm or more and 2.5rpm or less.
A feeding method for a crystal growth furnace is characterized in that when a first volume of raw materials is fed into a crucible along a feeding device, a driving device drives the crucible to rotate around a rotation center line of the crucible at a constant speed at a first rotation speed, so that the first volume of raw materials is laid at the bottom of the crucible; at the moment, the driving device drives the crucible to rotate at an accelerated speed to a second rotating speed, and the driving device drives the crucible to rotate back and forth alternately between the first rotating speed and the second rotating speed, wherein the first rotating speed is less than the second rotating speed.
Further, the crucible is rotated at an acceleration speed from the first rotation speed up to a second rotation speed, and when the crucible reaches the second rotation speed, the crucible is rotated at a deceleration speed from the second rotation speed up to the first rotation speed, the crucible is changed between the first rotation speed and the second rotation speed in a sinusoidal cycle, and the difference between the second rotation speed and the first rotation speed is 1rpm or more and 2.5rpm or less.
Further, when the crucible rotates at a constant speed at a first rotating speed, the height difference between the crucible and the feeding device, which extends along the direction of the rotating central line of the crucible, is set as H1, when the crucible starts to rotate at a second rotating speed in an accelerating manner from the first rotating speed, the driving device drives the crucible to move towards the direction close to the feeding device until the height difference between the crucible and the feeding device is H2, and H1 is greater than H2; at this time, the crucible is reciprocally alternated between a first rotational speed and a second rotational speed.
Further, when the volume of the raw material is increased, the detection device outputs an adjusting signal to the crystal growing furnace, the crystal growing furnace adjusts the flow of the protective gas released in the crystal growing furnace according to the adjusting signal, the pressure in the crystal growing furnace is controlled through the flow of the protective gas, and the pressure is greater than or equal to 10torr and less than or equal to 20torr.
Can drive crucible through the setting and rotate along self rotation center line, and along rotation center line direction linear reciprocating motion's drive arrangement, realize the even laying of raw materials in the crucible, avoid the raw materials to cause the harm to the crucible at the input in-process, prolonged the life of crucible to crystal growth's efficiency has been promoted.
Drawings
FIG. 1 is a schematic view of a feeding device of a crystal growth furnace according to an embodiment of the present invention.
FIG. 2 is a schematic view showing the connection between the crystal growth furnace and the frame in the embodiment of the present application.
FIG. 3 is a waveform diagram showing the variation of the rotational speed of the crucible in the embodiment of the present application.
FIG. 4 is a schematic view of a first position of a crucible in an embodiment of the present application.
FIG. 5 is a schematic view of a second position of the crucible in an embodiment of the present application.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the present invention in the specific embodiment will be clearly and completely described below with reference to the attached drawings in the embodiment of the present invention.
As shown in fig. 1 and 2, a feeding device 100 of a crystal growth furnace includes a crystal growth furnace 11, a frame 12, a crucible 13, and a feeding device 14. Specifically, crystal growth furnace 11 is at least partially disposed on frame 12. The crucible 13 is disposed in the accommodating space 111 formed in the crystal growth furnace 11. One end of the charging device 14 is connected to the accommodating space 111, and the raw material to be processed is charged into the crucible 13 through the charging device 14.
As one implementation, the feedstock material delivered to the crucible 13 by the charging device 14 includes a first volume of feedstock material and a second volume of feedstock material, and the first volume is less than the second volume. Specifically, in the process of conveying the raw material by the feeding device 14, because the conveying speed of the first volume of raw material in the feeding device 14 is greater than the conveying speed of the second volume of raw material in the feeding device 14, the first volume of raw material reaches the crucible 13 earlier than the second volume of raw material, and the bottom of the crucible 13 is uniformly paved by the first volume of raw material, so that the crucible 13 is prevented from being damaged due to impact or collision of the second volume of raw material, and the service life of the crucible 13 is prolonged. It will be appreciated that after the first volume of material has been substantially dispensed, the dispensing device 14 begins dispensing a second volume of material into the crucible 13.
As shown in fig. 2, a driving device 15 is further provided in the crystal growth furnace 11 and connected to the crucible 13, and when the first volume of raw material is fed into the crucible 13 along the feeding device 14, the driving device 15 drives the crucible 13 to rotate at a constant speed around the rotation center line 131 of the crucible 13 at a first rotation speed V1, so that the first volume of raw material is substantially uniformly spread on the bottom of the crucible 13. When the first volume of source material is at least partially delivered to the crucible 13, the driving device 15 drives the crucible 13 to rotate at an accelerated speed to the second rotation speed V2, and when the rotation speed of the crucible 13 reaches the second rotation speed V2, the driving device 15 drives the crucible 13 to rotate at a decelerated speed until the rotation speed of the crucible 13 reaches the first rotation speed V1. And the driving means 15 drives the crucible 13 to rotate reciprocally and alternately between the first rotational speed V1 and the second rotational speed V2. Wherein the first rotational speed V1 is less than the second rotational speed V2. Through the setting, avoid the raw materials to fall into crucible 13 bottom and directly pile up, and through setting up different slew velocity, can realize evenly laying of raw materials in crucible 13, avoid the raw materials to cause the harm to crucible 13 at the input in-process, prolonged crucible 13's life to crystal growth's efficiency has been promoted.
As shown in fig. 3, as one mode of realization, when the driving device 15 drives the crucible 13 to perform the alternating reciprocating rotation around the rotation center line 131 of the crucible 13, the rotation speed of the crucible 13 is changed between the first rotation speed V1 and the second rotation speed V2 in a sinusoidal cycle. So that the first volume or the second volume of source material is deposited in the crucible 13 to a height that naturally collapses and the source material is deposited substantially uniformly in the crucible 13. The feeding method in the above embodiment, which uses the first rotation speed V1 and the second rotation speed V2 to rotate alternately and reciprocally, allows the raw material to be substantially uniformly spread on the bottom of the crucible 13, reduces the damage of the second volume of raw material to the crucible 13, and prolongs the service life of the crucible 13.
Further, when the crucible 13 is alternately rotated reciprocally around the rotation center line 131 thereof between the first rotation speed V1 and the second rotation speed V2, the difference between the second rotation speed V2 and the first rotation speed V1 is 1rpm or more and 2.5rpm or less. Specifically, the difference between the second rotational speed V2 and the first rotational speed V1 is 1.1rpm or more and 2.3rpm or less. More specifically, the difference between the second rotational speed V2 and the first rotational speed V1 is 1.2rpm or more and 2rpm or less. Through the arrangement, when the first volume of raw materials or the second volume of raw materials fall into the crucible 13, the first volume of raw materials or the second volume of raw materials are uniformly paved at the bottom of the crucible 13, and the molten raw materials can cover the edge of the crucible 13 under the action of centrifugal force through the reciprocating alternate rotation of the crucible 13, so that the damage of the second volume of raw materials to the crucible 13 is reduced, and the service life of the crucible 13 is prolonged.
It will be appreciated that the crucible 13 is driven by the drive means 15 to rotate at a constant speed at the first rotation speed V1, so that the raw material falls uniformly on the bottom of the crucible 13 in a substantially regular triangular ring. Further, the driving device 15 drives the crucible 13 to rotate alternately and reciprocally between the first rotating speed V1 and the second rotating speed V2, so that the raw material in a molten state is laid on the edge of the crucible 13, and one side end surface of the crucible 13 facing the feeding device 14 can be covered by the raw material in the molten state, thereby avoiding damage to the crucible 13 when the second volume of the raw material falls. The rotation speed of the crucible 13 is not specifically limited, that is, the driving device 15 can drive the crucible 13 to rotate at a constant speed at the first rotation speed V1 or the second rotation speed V2 when the second volume of raw material is fed.
As shown in fig. 4 and 5, as one implementation, the driving device 15 further includes a lifting structure capable of driving the crucible 13 to lift, when the driving device 15 drives the crucible 13 to lift, the lifting direction of the crucible 13 is substantially parallel to the rotation center line 131 of the crucible 13, and the driving device 15 can drive the crucible 13 to perform linear reciprocating motion along the rotation center line 131 of the crucible 13. Specifically, when the crucible 13 rotates at a first rotation speed V1 at a constant speed, the height difference between the crucible 13 and the charging device 14 distributed along the direction of the rotation center line 131 of the crucible 13 is set to be H1; when the crucible 13 is alternately rotated back and forth between the first rotational speed V1 and the second rotational speed V2, a height difference between the crucible 13 and the charging device 14 distributed in the direction of the rotational center line 131 of the crucible 13 is set to H2, and H1 is larger than H2. It can be understood that when the height difference between the crucible 13 and the feeding device 14 is H1, the raw material is fed into the crucible 13 through the feeding device 14, and the initial kinetic energy of the raw material is P1; when the height difference between the crucible 13 and the feeding device 14 is H2, the raw material is fed into the crucible 13 through the feeding device 14, the initial kinetic energy of the raw material is P2, and P1 is greater than P2. I.e. when the height difference between the crucible 13 and the charging device 14 is H1, so that the raw material is uniformly spread at the bottom of the crucible 13, avoiding the second volume of raw material falling down to damage the crucible 13. When the height difference between the crucible 13 and the charging device 14 is H2, the stacking efficiency of the raw material in the crucible 13 is improved, and the crystal growth is facilitated.
Further, in order to more flexibly set the position of the crucible 13 and to extend the service life of the crucible 13, no specific limitation is made on the height difference between the crucible 13 and the charging device 14. That is, during the process of uniform rotation of the crucible 13 at the first rotation speed V1, the height difference between the crucible 13 and the charging device 14 can also be set to H2. The height difference between the crucible 13 and the charging device 14 can also be set to be H1 during the reciprocating alternating rotation of the crucible 13 between the first rotation speed V1 and the second rotation speed V2. It will be appreciated that the height difference between the crucible 13 and the charging device 14 is only used to improve the effect of the deposition of the raw material in the crucible 13 and is not limited to any stage of movement of the crucible 13.
As can be understood, the application mainly improves the laying effect of the raw materials in the crucible 13 by changing the rotating speed of the crucible 13; and changing the height difference between the crucible 13 and the feeding device 14, thereby changing the kinetic energy of the falling raw material. In particular, any embodiment in which the position and the rotation speed of the crucible 13 can be adjusted by the driving means 15 is within the scope of the present application.
In one implementation, the crystal growth furnace 11 further comprises a detection device (not shown in the figure) at least partially disposed in the crystal growth furnace 11, and the detection device detects the volume of the raw material in the crucible 13 and releases a volume of shielding gas according to the volume of the raw material in the crucible 13, so as to reduce the oxidation of the raw material in the crucible 13, wherein the shielding gas can be argon or any chemically stable gas can be used as the shielding gas. Specifically, when the volume of the raw material is increased and a preset threshold value is reached, the detection device outputs an adjusting signal to the crystal growth furnace 11, and the crystal growth furnace 11 adjusts the flow of the protective gas released in the crystal growth furnace 11 according to the adjusting signal, so that the working environment for maintaining the raw material crystallization in the crucible 13 is optimized, the crystal growth efficiency is improved, and the productivity of the crystal growth furnace 11 is increased.
The application also provides a feeding method of the crystal growth furnace 11. Specifically, when a first volume of raw material is fed into the crucible 13 along the feeding device 14, the driving device 15 drives the crucible 13 to rotate at a constant speed around the rotation center line 131 of the crucible 13 at a first rotation speed V1, so that the raw material in the crucible 13 can be laid on the bottom of the crucible 13 in a substantially regular triangular ring shape, and at this time, no molten raw material is laid on the edge portion of one end surface of the crucible 13 facing the feeding device 14. Further, the driving device 15 drives the crucible 13 to rotate at an accelerated speed to the second rotation speed V2, so that the raw material in the molten state in the crucible 13 can gradually move to the edge of the crucible 13 by centrifugal force, so that the raw material in the molten state is laid on the edge of the crucible 13, thereby reducing damage to the crucible 13 when the raw material falls down to the crucible 13, and prolonging the service life of the crucible 13. Further, when the rotational speed of the crucible 13 reaches the second rotational speed V2, the driving device 15 drives the crucible 13 to rotate at a reduced speed from the second rotational speed V2 up to the first rotational speed V1, and the crucible 13 is alternately rotated back and forth between the first rotational speed V1 and the second rotational speed V2, and the first rotational speed V1 is smaller than the second rotational speed V2. Through the arrangement, the raw material in a molten state can be uniformly paved on the end face, facing the feeding device 14, of the crucible 13, impact or collision between the falling raw material and the crucible 13 is avoided, damage to the crucible 13 is reduced, and the service life of the crucible 13 is prolonged.
As one implementation, the crucible 13 is accelerated from the first rotating speed V1 to the second rotating speed V2, and when the crucible 13 reaches the second rotating speed V2, the driving device 15 drives the crucible 13 to rotate at a reduced speed from the second rotating speed V2 until the first rotating speed V1, at which time the crucible 13 changes in a sinusoidal cycle between the first rotating speed V1 and the second rotating speed V2, and the difference between the second rotating speed V2 and the first rotating speed V1 is greater than or equal to 1rpm and less than or equal to 2.5rpm. Further, the difference between the second rotational speed V2 and the first rotational speed V1 is 1.1rpm or more and 2.3rpm or less. More specifically, the difference between the second rotational speed V2 and the first rotational speed V1 is 1.2rpm or more and 2rpm or less.
As another implementation, when the feeding device 14 feeds the first volume of raw material, the driving device 15 drives the crucible 13 to rotate at a constant speed at the first rotating speed V1, so that the raw material in the crucible 13 is laid on the bottom of the crucible 13. Further, when the raw material in a molten state is laid on the bottom of the crucible 13 in a substantially regular triangular ring shape, the driving device 15 drives the crucible 13 to rotate back and forth alternately between the first rotating speed V1 and the second rotating speed V2, so that the raw material in a molten state can cover the edge of the crucible 13, the damage to the crucible 13 when the second volume of the raw material falls is avoided, and the service life of the crucible 13 is prolonged. More specifically, when the edge of the crucible 13 is covered with the raw material in a molten state, the crucible 13 may be set to rotate at a constant speed at the first rotation speed V1 or the second rotation speed V2, so that the energy consumption of the crystal growth furnace 11 is reduced and substantially the same productivity can be maintained.
As one implementation, when the crucible 13 rotates at a constant speed at the first rotation speed V1, the height difference between the crucible 13 and the feeding device 14 is set to H1. At least part of the first volume of material then enters the crucible 13 in preference to the second volume of material so that the first volume of material lays evenly on the bottom of the crucible 13 and the initial kinetic energy of the material output by the dosing means 14 is raised to enable the material to move to a position remote from the dosing means 14. Further, the driving device 15 drives the crucible 13 to rise to a height difference H2 between the crucible 13 and the feeding device 14, so as to reduce the initial kinetic energy of the raw material output by the feeding device 14, thereby facilitating the stacking of the raw material in the crucible 13. Specifically, the height difference between the crucible 13 and the feeding device 14 can be adjusted according to actual conditions. The crystal growth furnace 11 is internally provided with a detection device for detecting the volume of the raw material in the crucible 13, and when the volume of the raw material in the crucible 13 reaches a preset threshold value, the driving device 15 can drive the crucible 13 to perform position adjustment, namely, change the height difference between the crucible 13 and the feeding device 14.
As another implementation, when the crucible 13 rotates at a constant speed at the first rotation speed V1, the height difference between the crucible 13 and the feeding device 14 can also be set to be H2.
As another implementation, when the crucible 13 is alternately rotated back and forth between the first rotation speed V1 and the second rotation speed V2, the height difference between the crucible 13 and the charging device 14 may be set to H1.
It will be appreciated that there is not necessarily a direct relationship between the height difference between the crucible 13 and the charging device 14 and the rotational speed of the crucible 13, and that the height difference between the crucible 13 and the charging device 14 relates to at least one of the level of the molten source material in the crucible 13, the volume of the source material charged, and/or the reaction time in the crucible 13. Therefore, the height difference between the crucible 13 and the feeding device 14 can be adjusted according to actual conditions, so as to meet the crystal growth conditions in the crucible 13.
In one implementation, when the volume of the raw material in the crucible 13 increases, the detection device outputs an adjustment signal to the crystal growth furnace 11, and the crystal growth furnace 11 adjusts the flow rate of the shielding gas in the crystal growth furnace 11 according to the adjustment signal, that is, increases or decreases the released shielding gas, thereby controlling the pressure in the crystal growth furnace 11. Specifically, the flow rate of the shielding gas is reduced in accordance with a reduction in the pressure in the crystal growth furnace 11, and the pressure in the crystal growth furnace 11 is reduced in accordance with a reduction in the volume of the raw material in a molten state in the crucible 13. It is understood that the flow rate of the shielding gas may be increased according to the increase of the volume of the raw material in the molten state in the crucible 13, and the flow rate of the shielding gas may be specifically adjusted according to actual conditions. Further, the pressure in the crystal growth furnace 11 is set to 10torr or more and 20torr or less by releasing the protective gas to adjust the pressure in the crystal growth furnace 11.
It is understood that the feeding method of the crystal growth furnace 11 is completed by changing the rotation speed of the crucible 13 and the height difference between the crucible 13 and the feeding device 14 within the scope of the present application.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (10)
1. A crystal growing furnace feeding device comprises:
a crystal growing furnace;
the crystal growth furnace is at least partially arranged on the frame;
a crucible disposed within the crystal growth furnace;
the feeding device is connected with the crystal growth furnace and used for feeding raw materials into the crucible;
it is characterized in that the preparation method is characterized in that,
the raw materials comprise a first volume and a second volume, the first volume is smaller than the second volume, and after the raw materials with the first volume are put in, the feeding device puts in the raw materials with the second volume; the crucible is provided with a driving device connected with the crucible, and when the raw material with the first volume is delivered into the crucible along the feeding device, the driving device drives the crucible to rotate around the rotation center line of the crucible at a constant speed at a first rotation speed so as to enable the raw material with the first volume to be laid at the bottom of the crucible; at the moment, the driving device drives the crucible to rotate to a second rotating speed in an accelerating mode, and the driving device drives the crucible to rotate between the first rotating speed and the second rotating speed in a reciprocating mode, wherein the first rotating speed is smaller than the second rotating speed.
2. The crystal growth furnace charging device according to claim 1,
the rotational speed of the crucible about its own rotational centerline varies between the first rotational speed and the second rotational speed in a sinusoidal cycle.
3. The crystal growth furnace charging device according to claim 1,
besides driving the crucible to rotate around the rotation center line of the crucible, the driving device also drives the crucible to linearly reciprocate along the direction parallel to the rotation center line of the crucible.
4. The crystal growth furnace charging apparatus according to claim 1 or 3,
when the crucible rotates at a constant speed at the first rotating speed, the height difference between the crucible and the feeding device, which extends along the direction of the rotating central line of the crucible, is set as H1; when the crucible is alternated back and forth between the first rotating speed and the second rotating speed, the height difference between the crucible and the feeding device is set to be H2, and the H1 is larger than the H2.
5. The crystal growth furnace charging device according to claim 1,
a detection device for detecting the volume of the raw material is arranged in the crystal growth furnace, and the crystal growth furnace reduces the oxidation of the raw material by releasing protective gas; when the volume of the raw materials is increased, the detection device outputs an adjusting signal to the crystal growth furnace, and the crystal growth furnace adjusts the flow of the protective gas released in the crystal growth furnace according to the adjusting signal.
6. The crystal growth furnace charging device according to claim 1,
the difference between the second rotational speed and the first rotational speed is 1rpm or more and 2.5rpm or less.
7. A feeding method for a crystal growing furnace,
the crystal growth furnace charging device according to any one of claims 1 to 6,
when the first volume of raw material is delivered into the crucible along the feeding device, the driving device drives the crucible to rotate around the rotation center line of the crucible at a constant speed at the first rotation speed, so that the first volume of raw material is laid on the bottom of the crucible; at this time, the driving device drives the crucible to rotate at an accelerated speed to the second rotating speed, and the driving device drives the crucible to rotate back and forth alternately between the first rotating speed and the second rotating speed, wherein the first rotating speed is lower than the second rotating speed.
8. The method of feeding a crystal growth furnace according to claim 7,
the crucible rotates from the first rotating speed in an accelerating mode until the crucible reaches the second rotating speed, when the crucible reaches the second rotating speed, the crucible rotates from the second rotating speed in a decelerating mode until the crucible reaches the first rotating speed, the crucible changes in a sine cycle mode between the first rotating speed and the second rotating speed, and the difference value between the second rotating speed and the first rotating speed is larger than or equal to 1rpm and smaller than or equal to 2.5rpm.
9. The method of charging a crystal growth furnace according to claim 7 or 8,
when the crucible rotates at a constant speed at the first rotating speed, the height difference between the crucible and the feeding device, which extends along the direction of the rotating central line of the crucible, is set as H1, when the crucible starts to rotate at a second rotating speed in an accelerating manner from the first rotating speed, the driving device drives the crucible to move towards the direction close to the feeding device until the height difference between the crucible and the feeding device is H2, and the H1 is larger than the H2; at this time, the crucible is reciprocally alternated between the first rotational speed and the second rotational speed.
10. The method of feeding a crystal growth furnace according to claim 7,
when the volume of the raw material is increased, the detection device outputs an adjusting signal to the crystal growth furnace, the crystal growth furnace adjusts the flow of the protective gas released in the crystal growth furnace according to the adjusting signal, the pressure in the crystal growth furnace is controlled through the flow of the protective gas, and the pressure is larger than or equal to 10torr and smaller than or equal to 20torr.
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| JP2007314394A (en) * | 2006-05-29 | 2007-12-06 | Sumco Corp | Device and method for feeding raw material by czochralski method |
| CN109440184A (en) * | 2018-12-19 | 2019-03-08 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
| CN209636365U (en) * | 2019-03-18 | 2019-11-15 | 晶科能源有限公司 | A kind of feeder of silica crucible |
| JP2019199374A (en) * | 2018-05-16 | 2019-11-21 | 住友金属鉱山株式会社 | Method for charging powdery raw material |
| CN110904508A (en) * | 2019-10-28 | 2020-03-24 | 山东天岳先进材料科技有限公司 | Preparation device and application of silicon carbide single crystal |
| CN114561689A (en) * | 2022-02-17 | 2022-05-31 | 徐州鑫晶半导体科技有限公司 | Feeding pipe, single crystal growth equipment and feeding method thereof |
-
2022
- 2022-10-26 CN CN202211315522.1A patent/CN115369490B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4055391A (en) * | 1975-06-11 | 1977-10-25 | Prolizenz Ag | Crucible |
| JP2005001977A (en) * | 2003-05-16 | 2005-01-06 | Sumitomo Mitsubishi Silicon Corp | Apparatus and method for supplying raw material in czochralski method |
| JP2007314394A (en) * | 2006-05-29 | 2007-12-06 | Sumco Corp | Device and method for feeding raw material by czochralski method |
| JP2019199374A (en) * | 2018-05-16 | 2019-11-21 | 住友金属鉱山株式会社 | Method for charging powdery raw material |
| CN109440184A (en) * | 2018-12-19 | 2019-03-08 | 浙江晶盛机电股份有限公司 | A kind of single crystal growing furnace continuous dosing conveying mechanism |
| CN209636365U (en) * | 2019-03-18 | 2019-11-15 | 晶科能源有限公司 | A kind of feeder of silica crucible |
| CN110904508A (en) * | 2019-10-28 | 2020-03-24 | 山东天岳先进材料科技有限公司 | Preparation device and application of silicon carbide single crystal |
| CN114561689A (en) * | 2022-02-17 | 2022-05-31 | 徐州鑫晶半导体科技有限公司 | Feeding pipe, single crystal growth equipment and feeding method thereof |
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| CN115369490B (en) | 2023-02-21 |
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