CN103103607B - Thermal system for drawing 8 inch heavy As-doped silicon single crystal - Google Patents
Thermal system for drawing 8 inch heavy As-doped silicon single crystal Download PDFInfo
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- CN103103607B CN103103607B CN201310058263.3A CN201310058263A CN103103607B CN 103103607 B CN103103607 B CN 103103607B CN 201310058263 A CN201310058263 A CN 201310058263A CN 103103607 B CN103103607 B CN 103103607B
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Abstract
The invention provides a thermal system for drawing 8 inch heavy As-doped silicon single crystal. The system comprises a draft tube, an insulation cover and an upper insulation cylinder. One end of the insulation cylinder is provided with an insulation cover; and one end of the cover is connected to the draft tube. The system is characterized in that the upper insulation cylinder has a height of 220mm, and the draft tube has a height of 349mm. The invention has the beneficial effect that the system solves the problem of abnormal crystal formation due to overlarge width caused by small radial temperature gradient, and the problem of crystal formation fluctuation due to CCD signal value difficulty caused by overlarge width.
Description
Technical field
The invention belongs to technical field of semiconductors, especially relate to the hot systems of a kind of drawing 8 inches of heavily doped as silicon crystal.
Background technology
It is up-sizings on the basis of small size thermal field that original large size thermal field draws 8 cun of heavily doped monocrystalline, but lower being difficult to of crystal forming rate realizes volume production; Analyzing reason has (1) its hot systems structure solid-liquid interface radial symmetry gradient less than normal, during drawing major diameter single crystal, the disconnected greatly luxuriant rate of temperature fluctuation is high, and for wide of monocrystalline in <111> monocrystalline crystal pulling process, comparatively great achievement is brilliant abnormal.(2) due to the position influence of equipment ccd signal, when drawing <111> monocrystalline, wide excessive, signal fluctuation is large, and ccd signal value difficulty affects into crystalline substance.
Summary of the invention
The problem to be solved in the present invention is to provide that a kind of cost is low, the hot systems of the high drawing of crystal forming rate 8 inches of heavily doped as silicon crystal.
For solving the problems of the technologies described above, the technical solution used in the present invention is: the hot systems of a kind of drawing 8 inches of heavily doped as silicon crystal, comprise guide shell, insulation cover and upper heat-preservation cylinder, described upper heat-preservation cylinder is provided with insulation cover, one end of described insulation cover connects described guide shell, it is characterized in that: the height of described upper heat-preservation cylinder is 220mm, the height of described guide shell is 349mm.
The advantage that the present invention has and positively effect are: owing to adopting technique scheme, solve and to cause because radial symmetry gradient is less than normal wide to cross the brilliant abnormal problem of great achievement, solve because wide excessively affects the problem that ccd signal value difficulty affects into brilliant signal fluctuation simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention
In figure:
1, upper heat-preservation cylinder 2, insulation cover 3, guide shell
Embodiment
Embodiment 1
As shown in Figure 1, the present invention includes guide shell 3, insulation cover 2 and upper heat-preservation cylinder 1, described upper heat-preservation cylinder 1 is provided with insulation cover 2, one end of described insulation cover 2 connects described guide shell 3, it is characterized in that: the height control of described upper heat-preservation cylinder 1 is 220mm, and the height of described guide shell 3 is for shortening to 349mm.
By upper heat-preservation cylinder height is adjusted to 220mm by 249mm, reduce wide size to increase radial symmetry gradient, solve and cause wide to cross the brilliant abnormal problem of great achievement because radial symmetry gradient is less than normal.By guide shell height is adjusted to 349mm by 378mm, adjust CCD viewing window angle simultaneously, solve because wide excessively affects the problem that ccd signal value difficulty affects into brilliant signal fluctuation.
Test example 1
The process data drawing 8 cun of <111> crystal orientation heavily doped as silicon crystal is as shown in the table:
As seen from the above table owing to improving upper heat-preservation cylinder and guide shell, shorten both height, expand CCD and get the light visual field, be compared with the prior art: add blow-on number of times, shorten average single stove time, substantially increase crystal forming rate, significantly improve qualification rate.
Above one embodiment of the present of invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the present patent application scope change and improve, and all should still belong within patent covering scope of the present invention.
Claims (1)
1. one kind draws the hot systems of 8 inches of heavily doped as silicon crystal, comprise guide shell, insulation cover and upper heat-preservation cylinder, described upper heat-preservation cylinder is provided with insulation cover, one end of described insulation cover connects described guide shell, it is characterized in that: the height of described upper heat-preservation cylinder is 220mm, the height of described guide shell is 349mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310058263.3A CN103103607B (en) | 2013-02-25 | 2013-02-25 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310058263.3A CN103103607B (en) | 2013-02-25 | 2013-02-25 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103103607A CN103103607A (en) | 2013-05-15 |
| CN103103607B true CN103103607B (en) | 2015-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310058263.3A Active CN103103607B (en) | 2013-02-25 | 2013-02-25 | Thermal system for drawing 8 inch heavy As-doped silicon single crystal |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154966A (en) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | Novel heat-insulating cylinder for improving crystallization of zone-melting silicon single crystals |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101979720A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Mono-crystal furnace thermal field |
| CN102108545A (en) * | 2009-12-24 | 2011-06-29 | 江苏聚能硅业有限公司 | Thermal field system suitable for large charge amount of 90t furnace |
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| CN102367588A (en) * | 2011-11-07 | 2012-03-07 | 东方电气集团峨嵋半导体材料有限公司 | Straight-pull eight-inch silicon single crystal thermal field and production method of eight-inch silicon single crystal |
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2013
- 2013-02-25 CN CN201310058263.3A patent/CN103103607B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102108545A (en) * | 2009-12-24 | 2011-06-29 | 江苏聚能硅业有限公司 | Thermal field system suitable for large charge amount of 90t furnace |
| CN101979720A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Mono-crystal furnace thermal field |
| CN102168300A (en) * | 2011-04-06 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Thermal system for preparing heavily-doped silicon single crystal |
| CN102367588A (en) * | 2011-11-07 | 2012-03-07 | 东方电气集团峨嵋半导体材料有限公司 | Straight-pull eight-inch silicon single crystal thermal field and production method of eight-inch silicon single crystal |
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| Publication number | Publication date |
|---|---|
| CN103103607A (en) | 2013-05-15 |
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Effective date of registration: 20181102 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: Tianjin Zhonghuan Semiconductor Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: Huanou Semiconductor Material Technology Co., Ltd., Tianjin |
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Effective date of registration: 20190520 Address after: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee before: Tianjin Zhonghuan Semiconductor Co., Ltd. |
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Effective date of registration: 20220420 Address after: 010070 No.15 Baolier street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |
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