CN201553806U - Special-shaped molybdenum crucible for growing sapphire single wafer - Google Patents
Special-shaped molybdenum crucible for growing sapphire single wafer Download PDFInfo
- Publication number
- CN201553806U CN201553806U CN2009201807953U CN200920180795U CN201553806U CN 201553806 U CN201553806 U CN 201553806U CN 2009201807953 U CN2009201807953 U CN 2009201807953U CN 200920180795 U CN200920180795 U CN 200920180795U CN 201553806 U CN201553806 U CN 201553806U
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- Prior art keywords
- molybdenum crucible
- shaped molybdenum
- special
- sapphire single
- crucible
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- Expired - Fee Related
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Abstract
The utility model discloses a special-shaped molybdenum crucible for growing a sapphire single wafer, which comprises a dish-shaped molybdenum crucible and is characterized in that a mould slot is arranged at the middle part of the dish-shaped molybdenum crucible, and a mould is embedded in the mould slot. The special-shaped molybdenum crucible overcomes the defects of the traditional circular crucible, constructs the uniform radial temperature gradient, and is applicable to shaping and growing the large-size sapphire single wafer through a guided-mode method.
Description
Technical field
The utility model relates to the crucible field that is used for the growing sapphire single-chip, is specifically related to a kind of special-shaped molybdenum crucible that is used for the growing sapphire single-chip.
Background technology
It is pure to pursue height, large size, and perfection of crystal is good, and the large size single crystal sapphire of being convenient to process is various countries researchist's a main direction of studying always.Since sapphire hardness height (9.0Mohs), anisotropy, the growth difficulty is not easy to processing, and traditional bar causes very big waste easily in the course of processing.And that the guided mode rule has a crystalline growth velocity is fast, and size can accurately be controlled, and has simplified the crystalline work program, greatly reduce the crystal difficulty of processing, saved material, time and the energy, reduce production costs, increasing economic efficiency, is the current topmost growth method of artificial sapphire.
But in the traditional round crucible, (diameter＞80mm) radial symmetry gradient is cracked, a little less than the thermal-shock resistance, has restricted the production of guided mode method large-sized wafer, has limited its application in the large size detection window for large-sized wafer.Its major cause is because the bearing material crucible has played heating, insulation, heat-reflecting effect in medium-frequency induction furnace, cause its temperature to be higher than sapphire crystal growth temperature (2050 ℃), and each point on the crystal growth solid-liquid interface and sidewall of crucible distance do not wait, cause radial temperature inhomogeneous, gradient is excessive, and then causes crystal cleavage.
The utility model content
The technical problems to be solved in the utility model provides a kind of special-shaped molybdenum crucible that is used for the growing sapphire single-chip, makes up uniform radial symmetry gradient, adapts to the sapphire single-crystal sheet of the legal shape growing large-size of guided mode.
For addressing the above problem, the technical solution of the utility model is:
A kind of special-shaped molybdenum crucible that is used for the growing sapphire single-chip includes dish-shaped molybdenum crucible, and it is characterized in that: there is mold slots at the middle part of described dish-shaped molybdenum crucible, studs with mould in the mold slots.
The beneficial effects of the utility model:
The utility model has overcome the defective of traditional round crucible, has made up uniform radial symmetry gradient, is applicable to the sapphire single-crystal sheet of the legal shape growing large-size of guided mode (for example: the wide * 3mm of the long * 110mm of 400mm is thick).
Description of drawings
Fig. 1 is a structural representation of the present utility model, and wherein, figure (a) is a front view, and figure (b) is a vertical view.
Embodiment
Referring to Fig. 1, a kind of special-shaped molybdenum crucible that is used for the growing sapphire single-chip includes dish-shaped molybdenum crucible 1, and there is mold slots 2 at the middle part of dish-shaped molybdenum crucible 1, studs with mould in the mold slots 2.
It is that 99.99% metal molybdenum is as material that dish molybdenum crucible 1 is selected purity for use.
Claims (1)
1. a special-shaped molybdenum crucible that is used for the growing sapphire single-chip includes dish-shaped molybdenum crucible, and it is characterized in that: there is mold slots at the middle part of described dish-shaped molybdenum crucible, studs with mould in the mold slots.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201807953U CN201553806U (en) | 2009-11-27 | 2009-11-27 | Special-shaped molybdenum crucible for growing sapphire single wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201807953U CN201553806U (en) | 2009-11-27 | 2009-11-27 | Special-shaped molybdenum crucible for growing sapphire single wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201553806U true CN201553806U (en) | 2010-08-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201807953U Expired - Fee Related CN201553806U (en) | 2009-11-27 | 2009-11-27 | Special-shaped molybdenum crucible for growing sapphire single wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201553806U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127803B (en) * | 2011-03-08 | 2012-05-30 | 中国科学院上海硅酸盐研究所 | Growth method of rectangular specially-shaped sapphire crystal |
| WO2013085417A1 (en) * | 2011-12-05 | 2013-06-13 | Общество С Ограниченной Ответственностью "Комплект Ющие И Материалы" | Crucible for evaporating aluminium in an epitaxy process |
| CN103255477A (en) * | 2012-02-17 | 2013-08-21 | 上海中电振华晶体技术有限公司 | Molded sapphire crystal growth method and apparatus thereof |
-
2009
- 2009-11-27 CN CN2009201807953U patent/CN201553806U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127803B (en) * | 2011-03-08 | 2012-05-30 | 中国科学院上海硅酸盐研究所 | Growth method of rectangular specially-shaped sapphire crystal |
| WO2013085417A1 (en) * | 2011-12-05 | 2013-06-13 | Общество С Ограниченной Ответственностью "Комплект Ющие И Материалы" | Crucible for evaporating aluminium in an epitaxy process |
| CN103255477A (en) * | 2012-02-17 | 2013-08-21 | 上海中电振华晶体技术有限公司 | Molded sapphire crystal growth method and apparatus thereof |
| CN103255477B (en) * | 2012-02-17 | 2016-10-19 | 江苏中电振华晶体技术有限公司 | The growing method of a kind of shaped sapphire crystal and equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Nan Inventor after: Zhao Qing Inventor after: Jia Jianguo Inventor before: Luo Ping Inventor before: Liang Zhian Inventor before: Zhou Jie Inventor before: Zhang Yefeng |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LUO PING LIANG ZHIAN ZHOU JIE ZHANG YEFENG TO: WANG NAN ZHAO QING JIA JIANGUO |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100818 Termination date: 20131127 |