CN204251754U - A kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed - Google Patents
A kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed Download PDFInfo
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- CN204251754U CN204251754U CN201420688047.7U CN201420688047U CN204251754U CN 204251754 U CN204251754 U CN 204251754U CN 201420688047 U CN201420688047 U CN 201420688047U CN 204251754 U CN204251754 U CN 204251754U
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- inner core
- urceolus
- barrel cover
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Abstract
The utility model provides a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed, comprises inner core, inner core barrel cover, urceolus, urceolus barrel cover and thermal insulation layer; Described inner core comprises inner core top and inner core bottom and both are connected to form inner core; Described inner core is sleeved on outer barrel, and is connected with urceolus; Described thermal insulation layer is placed in by the inside cavity formed after inner core is connected with urceolus; Described inner core top is covered by inner core top barrel cover and fits tightly, and described inner core bottom is covered lid by inner core lower sleeve and fits tightly, and described urceolus is covered by urceolus barrel cover and fits tightly.The advantage that the utility model has and positively effect are: this programme can reduce the radiant heat of inner core bottom to crystal on the one hand, increase inner core top to external irradiation and reflecting heat, accelerate latent heat release, improve pulling rate, on the other hand, reduce heat absorption, reduce guide shell urceolus temperature, increase plane of crystal heat loss through radiation, improve pulling rate, reduce power consumption, raise the efficiency, cost-saving.
Description
Technical field
The invention belongs to apparatus for manufacturing silicone single crystals field, especially relates to a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed.
Background technology
Monocrystalline growth with czochralski silicon is current manufacture order crystal silicon utilisation technology the most widely, and along with the development of photovoltaic industry, needs to enhance productivity further, to reduce costs under the prerequisite ensureing quality product.The most direct mode of enhancing productivity, for improving isodiametric growth of crystal speed, shortens the crystal pulling time.In actual production, first need to increase crystal axial-temperature gradient to increase the release of latent heat, then reduce axial-temperature gradient in crystalizing interface place melt, improve isodiametric growth of crystal speed to reach, shorten the production object of crystal pulling time.
Summary of the invention
The problem that the invention will solve is to provide a kind of Novel guide cylinder that can improve the vertical pulling silicon speed of growth.
For solving the problems of the technologies described above, the technical scheme that the invention adopts is: a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed, comprises inner core, inner core barrel cover, urceolus, urceolus barrel cover and thermal insulation layer;
Described inner core comprises inner core top and inner core bottom and inner core top and inner core bottom connect and compose inner core;
Described inner core barrel cover comprises inner core top barrel cover and inner core bottom barrel cover;
Described inner core is sleeve-like configuration and described inner core lower end diameter is less than upper end diameter; Described urceolus is sleeve-like configuration and described urceolus lower end diameter is less than upper end diameter; Described inner core lower end diameter is less than urceolus lower end diameter, and described inner core upper end diameter is less than urceolus upper end diameter;
Described inner core is sleeved on outer barrel, and inner core bottom is connected with urceolus; Described thermal insulation layer is placed in by the inside cavity formed after inner core is connected with urceolus; Described inner core top is covered by inner core top barrel cover and fits tightly, and described inner core bottom is covered lid by inner core lower sleeve and fits tightly, and described urceolus is covered by urceolus barrel cover and fits tightly.
Preferably, the ratio of described inner core lower height and inner core upper height is 0.3-1.5.
Preferably, described inner core top barrel cover is the specular material formation of high radiation coefficient.
Preferably, described inner core bottom barrel cover is the nonspecular surface material formation of low-E.
Preferably, described urceolus barrel cover is the specular material formation of low-E.
The advantage that the invention has and positively effect are: the inner core barrel cover top described in this programme is high radiation coefficient material and surface is mirror reflection surface, bottom is the design of low uptake factor nonspecular surface structure, the radiant heat of inner core bottom to crystal can be reduced on the one hand, increase the heat of inner core top to external irradiation and reflection simultaneously, accelerate the release of latent heat, and then raising pulling rate, on the other hand, the specular material of urceolus barrel cover material selection low-E, reduce the heat absorption of guide shell to well heater or crucible edge, reduce guide shell urceolus temperature, increase the heat loss through radiation of plane of crystal, and then raising pulling rate, reduce power consumption, raise the efficiency, cost-saving.
Accompanying drawing explanation
Fig. 1 is the first example structure schematic diagram;
Fig. 2 is the second example structure schematic diagram;
In figure: 1-inner core, 11-inner core top, 12-inner core bottom, 2-inner core barrel cover, 21-inner core top barrel cover, 22-inner core bottom barrel cover, 3-urceolus, 4-urceolus barrel cover, 5-thermal insulation layer.
Embodiment
Elaborate below in conjunction with the specific embodiment of accompanying drawing to the invention.
First embodiment:
Improve a Novel guide cylinder for Modelling of Crystal Growth in CZ-Si Pulling speed, comprise inner core 1, inner core barrel cover 2, urceolus 3, urceolus barrel cover 4 and thermal insulation layer 5; Described inner core 1 comprises inner core top 11 and inner core bottom 12 and inner core top 11 and inner core bottom 12 connect and compose inner core 1, and wherein mode of connection can be seamless welding, and the ratio of described inner core lower height and inner core upper height is 0.3-1.5; Described inner core barrel cover 2 comprises inner core top barrel cover 21 and inner core bottom barrel cover 22; Described inner core 1 is for sleeve-like configuration and described inner core 1 lower end diameter is less than upper end diameter; Described urceolus 3 is for sleeve-like configuration and described urceolus 3 lower end diameter is less than upper end diameter; Described inner core 1 lower end diameter is less than urceolus 3 lower end diameter, and described inner core 1 upper end diameter is less than urceolus 3 upper end diameter; It is inner that described inner core 1 is sleeved on urceolus 3, and inner core bottom 12 is connected with urceolus 3; Described thermal insulation layer 5 is placed in the inside cavity be made up of inner core 1 and urceolus 3.Described inner core top 11 is covered by inner core top barrel cover 21 and fits tightly, and described inner core bottom 12 is covered by inner core bottom barrel cover 22 and fits tightly, and described urceolus 3 is covered by urceolus barrel cover 4 and fits tightly.According to the deficiency that prior art exists, by the analysis of lot of experimental data, determine certain material selection range, described inner core top barrel cover is that the specular material of 21 high radiation coefficients is formed, if quartz or graphite are common used material within the scope of this.Described inner core bottom barrel cover 22 is that the nonspecular surface material of low-E is formed, if tungsten or molybdenum are common used material within the scope of this.Described urceolus barrel cover 4 is that the specular material of low-E is formed, if polish tungsten or molybdenum are common used material within the scope of this.
Second embodiment:
On the basis of technical scheme described in a first embodiment, do not comprise inner core barrel cover 2 and urceolus barrel cover 4 structure, direct use differing materials makes inner core top 11, inner core bottom 12, urceolus 3 respectively, according to the deficiency that prior art exists, by the analysis of lot of experimental data, determine certain material selection range, inner core top 11 adopts the specular material of high radiation coefficient to form, if quartz or graphite are common used material within the scope of this.Inner core bottom 12 adopts the nonspecular surface material of low-E to form, if tungsten or molybdenum are common used material within the scope of this.Urceolus 3 adopts the specular material of low-E to form, if polish tungsten or molybdenum are common used material within the scope of this.
Above an embodiment of the invention has been described in detail, but described content being only the preferred embodiment of the invention, the practical range for limiting the invention can not being considered to.All equalization changes done according to the invention application range with improve, within the patent covering scope that still all should belong to the invention.
Claims (5)
1. improve a Novel guide cylinder for Modelling of Crystal Growth in CZ-Si Pulling speed, it is characterized in that: comprise inner core (1), inner core barrel cover (2), urceolus (3), urceolus barrel cover (4) and thermal insulation layer (5);
Described inner core (1) comprises inner core top (11) and inner core bottom (12) and inner core top (11) and inner core bottom (12) connect and compose inner core (1);
Described inner core barrel cover (2) comprises inner core top barrel cover (21) and inner core bottom barrel cover (22);
Described inner core (1) is for sleeve-like configuration and described inner core (1) lower end diameter is less than upper end diameter; Described urceolus (3) is for sleeve-like configuration and described urceolus (3) lower end diameter is less than upper end diameter; Described inner core (1) lower end diameter is less than urceolus (3) lower end diameter, and described inner core (1) upper end diameter is less than urceolus (3) upper end diameter;
It is inner that described inner core (1) is sleeved on urceolus (3), and inner core bottom (12) are connected with urceolus (3); Described thermal insulation layer (5) is placed in and is connected the rear inside cavity formed by inner core (1) with urceolus (3); Described inner core top (11) is covered by inner core top barrel cover (21) and fits tightly, described inner core bottom (12) is covered by inner core bottom barrel cover (22) and fits tightly, and described urceolus (3) is covered by urceolus barrel cover (4) and fits tightly.
2. a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed according to claim 1, is characterized in that: described inner core bottom (12) height is 0.3-1.5 with the ratio of inner core top (11) height.
3. a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed according to claim 1, is characterized in that: the specular material that described inner core top barrel cover (21) is high radiation coefficient is formed.
4. a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed according to claim 3, is characterized in that: the nonspecular surface material that described inner core bottom barrel cover (22) is low-E is formed.
5. a kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed according to any one of claim 1-4, is characterized in that: the specular material that described urceolus barrel cover (4) is low-E is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420688047.7U CN204251754U (en) | 2014-11-17 | 2014-11-17 | A kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420688047.7U CN204251754U (en) | 2014-11-17 | 2014-11-17 | A kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204251754U true CN204251754U (en) | 2015-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420688047.7U Withdrawn - After Issue CN204251754U (en) | 2014-11-17 | 2014-11-17 | A kind of Novel guide cylinder improving Modelling of Crystal Growth in CZ-Si Pulling speed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204251754U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328485B (en) * | 2014-11-17 | 2017-01-04 | 天津市环欧半导体材料技术有限公司 | Guide cylinder for improving growth speed of czochralski silicon single crystal |
| CN106521617A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Molybdenum guide cylinder and single crystal furnace |
-
2014
- 2014-11-17 CN CN201420688047.7U patent/CN204251754U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328485B (en) * | 2014-11-17 | 2017-01-04 | 天津市环欧半导体材料技术有限公司 | Guide cylinder for improving growth speed of czochralski silicon single crystal |
| CN106521617A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Molybdenum guide cylinder and single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150408 Effective date of abandoning: 20170104 |