CN202170374U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
- Publication number
- CN202170374U CN202170374U CN2011202428167U CN201120242816U CN202170374U CN 202170374 U CN202170374 U CN 202170374U CN 2011202428167 U CN2011202428167 U CN 2011202428167U CN 201120242816 U CN201120242816 U CN 201120242816U CN 202170374 U CN202170374 U CN 202170374U
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- furnace
- heater
- container
- single crystal
- drop
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model belongs to the field of single crystal silicon production equipment, and particularly relates to a single crystal furnace, which includes a furnace base plate, a furnace body, a furnace lid, a turning board box and an auxiliary furnace, wherein the furnace body is arranged on the upper surface of the furnace base plate; the furnace lid is arranged at the top of the furnace body; the turning board box is arranged at the upper part of the furnace lid; and the auxiliary furnace is arranged at the upper part of the turning board box. The single crystal furnace is characterized in that a container used for placing material is arranged inside the furnace body; and a helicoidal heater is wound on the outer wall of the container. The helicoidal heater wound on the outer wall of the container has high heating efficiency, can accurately control the temperature of the container, and can facilitate the growth of crystals.
Description
Technical field
The utility model belongs to the silicon single crystal manufacturing apparatus field, particularly a kind of single crystal growing furnace.
Background technology
At present, czochralski crystal growing furnace is a most important product line in the crystal growth equipment, makes artificial lens with it, and single crystal growing speed is the highest, realizes MC the most easily, has therefore also obtained to use the most widely.In the crystalline process of growth, temperature around the crystal and seed crystal are grown up to crystalline and are had significant effects, and there is defective in traditional single crystal growing furnace aspect the temperature control, are unfavorable for the crystalline growth, and the utility model has proposed improvement to the deficiency of prior art.
Summary of the invention
To above-mentioned technical problem, the utility model provides a kind of and is provided with the spirrillum well heater in the container outer wall coiling, and heating efficiency is high, can accurately control the temperature of container, is convenient to the crystalline growth.
The utility model is realized through following technical scheme:
A kind of single crystal growing furnace, it comprises drop-bottom, body of heater, bell, perble range and secondary stove, described body of heater is arranged on the upper surface of drop-bottom; Bell is arranged on the top of body of heater, and perble range is arranged on the top of bell, and the top of perble range is provided with secondary stove; It is characterized in that: described body of heater set inside has the container that holds material; The outer wall coiling of described container is provided with the spirrillum well heater, adopts the spirrillum heater disk around the outer wall that is arranged on container, has increased the contact area of well heater and container; Improved heating efficiency, can adjust the temperature of container fast.
The electrode of described well heater is arranged on the drop-bottom, and is exposed to the lower surface of drop-bottom.
Described bell is provided with the viewing window of being convenient to observe the monocrystalline silicon production situation.
In sum: the utility model improves the efficient of heating through improving the structure of well heater, accurately controls the temperature in the container; Be convenient to the crystalline growth; Improved the efficient of crystal growth, motor is exposed to drop-bottom in addition, is convenient to carry out wiring; Do not influence the integral sealing effect of body of heater, the viewing window of setting is convenient to the staff and is observed the crystalline upgrowth situation.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Among the figure, 1 is drop-bottom, and 2 is body of heater, and 3 is bell, and 4 is perble range, and 5 is secondary stove, and 21 is container, and 22 is well heater, and 221 is electrode, and 31 is viewing window.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the utility model is further specified.
A kind of single crystal growing furnace as shown in Figure 1, it comprises drop-bottom 1, body of heater 2, bell 3, perble range 4 and secondary stove 5, described body of heater 2 is arranged on the upper surface of drop-bottom 1; Bell 3 is arranged on the top of body of heater 2, and perble range 4 is arranged on the top of bell 3, and the top of perble range 4 is provided with secondary stove 5; It is characterized in that: described body of heater 2 set inside have the container 21 that holds material; The outer wall coiling of described container 21 is provided with spirrillum well heater 22, adopts the spirrillum heater disk around the outer wall that is arranged on container, has increased the contact area of well heater and container; Improved heating efficiency, can adjust the temperature of container fast.
The electrode 221 of described well heater 22 is arranged on the drop-bottom 1, and is exposed to the lower surface of drop-bottom 1, and electrode is exposed to drop-bottom, is convenient to carry out wiring,
Described bell 3 is provided with the viewing window 31 of being convenient to observe the monocrystalline silicon production situation.
In sum: the utility model improves the efficient of heating through improving the structure of well heater, accurately controls the temperature in the container; Be convenient to the crystalline growth; Improved the efficient of crystal growth, electrode is exposed to drop-bottom in addition, is convenient to carry out wiring; Do not influence the integral sealing effect of body of heater, the viewing window of setting is convenient to the staff and is observed the crystalline upgrowth situation.
Claims (3)
1. single crystal growing furnace; It comprises drop-bottom, body of heater, bell, perble range and secondary stove, and described body of heater is arranged on the upper surface of drop-bottom, and bell is arranged on the top of body of heater; Perble range is arranged on the top of bell; The top of perble range is provided with secondary stove, it is characterized in that: described body of heater set inside has the container that holds material, and the outer wall coiling of described container is provided with the spirrillum well heater.
2. a kind of single crystal growing furnace according to claim 1 is characterized in that: the electrode of described well heater is arranged on the drop-bottom, and is exposed to the lower surface of drop-bottom.
3. a kind of single crystal growing furnace according to claim 1 is characterized in that: described bell is provided with the viewing window of being convenient to observe the monocrystalline silicon production situation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202428167U CN202170374U (en) | 2011-07-12 | 2011-07-12 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202428167U CN202170374U (en) | 2011-07-12 | 2011-07-12 | Single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202170374U true CN202170374U (en) | 2012-03-21 |
Family
ID=45828575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202428167U Expired - Fee Related CN202170374U (en) | 2011-07-12 | 2011-07-12 | Single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202170374U (en) |
-
2011
- 2011-07-12 CN CN2011202428167U patent/CN202170374U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 Termination date: 20140712 |
|
| EXPY | Termination of patent right or utility model |