CN219239833U

CN219239833U - Ending shaping plate for ingot single crystal

Info

Publication number: CN219239833U
Application number: CN202222801348.3U
Authority: CN
Inventors: 刘立新; 钟勇
Original assignee: Changsha Xinli Silicon Material Technology Co ltd
Current assignee: Hunan Lixin Silicon Material Technology Co ltd
Priority date: 2022-10-24
Filing date: 2022-10-24
Publication date: 2023-06-23
Anticipated expiration: 2032-10-24

Abstract

The utility model discloses a final shaping plate for ingot single crystals, which comprises the following components: the lower surface of the plate body is provided with a plurality of uniformly distributed frustum-shaped or conical grooves with small upper part and large lower part. In the final stage of crystal growth, a significant portion of the height of the silicon liquid at the top of the crucible is solidified at the same time, and the horizontal tension at the top of the silicon ingot is high, which may lead to dislocation generation and reverse extension thereof. The utility model starts from the ending of the ingot single crystal, and the ending shaping plate comprises a plate body, wherein a plurality of frustum-shaped or conical grooves with small upper part and large lower part are uniformly distributed on the lower surface of the plate body, dislocation-free crystal growth is guided to be maintained to the end of single crystal growth through the grooves, dislocation generation and reverse extension are avoided, and the quality of the ingot single crystal is improved.

Description

Ending shaping plate for ingot single crystal

Technical Field

The application relates to the technical field of solar photovoltaic materials, in particular to a final shaping plate for ingot single crystals.

Background

Under the large background of global warming and increasingly depleted fossil energy, renewable energy development and utilization are increasingly valued by the international society, and the development of renewable energy is becoming a consensus of countries around the world. Among various renewable energy sources, solar energy has become the fastest growing renewable energy source with the remarkable advantages of cleanliness, safety, inexhaustible and inexhaustible use. In the solar photovoltaic power generation industry, crystalline silicon used for manufacturing solar cells is mainly monocrystalline silicon adopting a CZ (CZ Czochralski) method and polycrystalline silicon adopting an ingot casting technology. The polycrystalline silicon cast ingot has large feeding amount, simple operation and low process cost, but the photovoltaic cell made of the polycrystalline silicon cast ingot has lower photoelectric conversion efficiency; the photovoltaic cell made of Czochralski silicon has high photoelectric conversion efficiency, but the CZ Czochralski method has the advantages of less single feeding, complex operation and high cost. Therefore, a method of producing single crystal silicon for solar energy using a casting method has been attracting more and more attention, in which the advantages of both are combined.

In the process of implementing the present utility model, the inventor finds that at least the following problems exist in the prior art:

for ingot single crystals, the later stage of crystal growth is an important stage, and poor ending can lead to cracking or bulging of the silicon ingot. The ingot single crystal is usually terminated according to the process of polycrystal ingot, but because a considerable part of the high silicon liquid at the top of the termination stage is solidified at the same time, the horizontal tension at the top of the silicon ingot is high, which may cause dislocation generation and reverse extension thereof.

Disclosure of Invention

The embodiment of the application aims to provide a final shaping plate for ingot single crystals, which is used for guiding dislocation-free crystal growth to maintain to the end of single crystal growth through grooves at the bottom of a plate body, avoiding dislocation generation and reverse extension and improving the quality of the ingot single crystals.

According to an embodiment of the present application, there is provided a finishing shaping plate for ingot single crystal, including: the lower surface of the plate body is provided with a plurality of uniformly distributed frustum-shaped or conical grooves with small upper part and large lower part.

Further, the height of the plate body is 5-60mm.

Further, the upper and lower surfaces of the plate body are rectangular in shape.

Further, the length and the width of the rectangle are respectively 1-3mm smaller than the bottom length and the bottom width of the inner side of the quartz crucible.

Further, the plurality of grooves are arranged in a quincuncial shape.

Further, the diameter of the round hole at the lower end of the groove is 5-60mm.

Further, the distance between circle centers of round holes at the bottoms of two adjacent grooves is 6-65mm.

Further, when the groove is conical, the height of the cone is 2-60mm and is not lower than 1/3 of the height of the plate body.

Further, the plate body is made of quartz materials.

The technical scheme provided by the embodiment of the application can comprise the following beneficial effects:

from the above examples, it is apparent that a significant portion of the height of the silicon liquid at the top of the crucible is solidified at the same time during the crystal growth ending stage, and the horizontal tension at the top of the ingot is large, which may cause dislocation generation and reverse extension thereof. The utility model starts from the ending of the ingot single crystal, and the ending shaping plate comprises a plate body, wherein a plurality of frustum-shaped or conical grooves with small upper part and large lower part are uniformly distributed on the lower surface of the plate body, dislocation-free crystal growth is guided to be maintained to the end of single crystal growth through the grooves, dislocation generation and reverse extension are avoided, and the quality of the ingot single crystal is improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

Fig. 1 is a cross-sectional view of a finishing plate for ingot single crystals, according to an exemplary embodiment.

Fig. 2 is a top view of a finishing plate for ingot single crystals, according to an exemplary embodiment.

The reference numerals in the figures are:

1. a plate body; 2. a groove; 3. and a round hole.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as detailed in the accompanying claims.

The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.

As shown in fig. 1-2, an embodiment of the present utility model provides a finishing plate for ingot single crystals, comprising: the plate body 1, the lower surface of plate body 1 has a plurality of taper platform shape or conical recess 2 that big-end-up was big-end-down of equipartition.

In the final stage of crystal growth, a significant portion of the height of the silicon liquid at the top of the crucible is solidified at the same time, and the horizontal tension at the top of the silicon ingot is high, which may lead to dislocation generation and reverse extension thereof. The ending shaping plate comprises a plate body 1, wherein a plurality of frustum-shaped or conical grooves 2 with small upper parts and large lower parts are uniformly distributed on the lower surface of the plate body 1, dislocation-free crystal growth is guided to be maintained to the end of single crystal growth through the grooves 2, dislocation generation and reverse extension are avoided, and the quality of ingot single crystals is improved.

In one embodiment, the height of the plate body 1 is 5-60mm. A significant portion of the height of the silicon liquid at the top is solidified at the same time, this solidified height being concentrated in the range of 5-60mm.

In one embodiment, the upper and lower surfaces of the plate body 1 are rectangular in shape. The cross section of the crucible in this embodiment is rectangular, and in practice, the same upper and lower cross sections are used according to the cross section shape of the crucible.

In one embodiment, the length and width of the rectangle are respectively 1-3mm smaller than the bottom length and bottom width of the inner side of the quartz crucible. The purpose is that the boss to the crucible inner wall is matched with to better, installation and removal that can be easier.

In one embodiment, the plurality of grooves 2 are arranged in a quincuncial shape, so that round holes can be better distributed on the lower surface of the whole plate body 1.

In one embodiment, the diameter of the round hole 3 at the lower end of the groove 2 is 5-60mm. When the diameter of the round hole is consistent with the height of the simultaneous solidification of the silicon liquid, the internal stress of the crystal tail formed is uniform, and the crystal quality is high.

In one embodiment, the distance between the circle centers of the round holes 3 at the bottoms of the adjacent two grooves 2 is 6-65mm. The diameter of the round hole 3 at the lower end is increased, so that a certain wall thickness is reserved between the holes.

In one embodiment, when the recess 2 is conical, the height of the cone is 2-60mm, which is not less than 1/3 of the height of the plate 1. This height can increase heat dissipation by utilizing the effective thickness of the quartz plate.

In one embodiment, the plate body 1 is made of quartz material. The oxygen content in the quartz is lower than in the same type of graphite, and the crystals obtained by using quartz are purer and less contaminated. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

It is to be understood that the present application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims

1. A finishing plate for ingot single crystals, comprising: the lower surface of the plate body is provided with a plurality of uniformly distributed frustum-shaped or conical grooves with small upper part and large lower part.

2. A finishing plate for ingot single crystal as set forth in claim 1, wherein the plate body has a height of 5-60mm.

3. The finishing plate for ingot single crystal as set forth in claim 1, wherein the upper and lower surfaces of the plate body are rectangular in shape.

4. A finishing plate for ingot single crystal as set forth in claim 3, wherein the length and width of the rectangle are respectively 1-3mm smaller than the bottom length and bottom width of the inside of the quartz crucible.

5. The ending template for ingot single crystal as set forth in claim 1, wherein the plurality of grooves are arranged in a quincuncial pattern.

6. A finishing plate for ingot single crystal as set forth in claim 1, wherein the diameter of the circular hole at the lower end of the groove is 5-60mm.

7. The ending mold plate for ingot single crystals as set forth in claim 1, wherein the distance between the centers of the circular holes at the bottoms of the adjacent two grooves is 6-65mm.

8. A finishing plate for ingot single crystals as set forth in claim 1, wherein when the groove is conical, the height of the cone is 2-60mm, not less than 1/3 of the height of the plate body.

9. The ending-shaping plate for ingot single crystal as set forth in claim 1, wherein the plate body is made of quartz material.