CN215289039U - Growth device for preparing silicon carbide single crystal by adopting PVT method - Google Patents
Growth device for preparing silicon carbide single crystal by adopting PVT method Download PDFInfo
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- CN215289039U CN215289039U CN202121084029.4U CN202121084029U CN215289039U CN 215289039 U CN215289039 U CN 215289039U CN 202121084029 U CN202121084029 U CN 202121084029U CN 215289039 U CN215289039 U CN 215289039U
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Abstract
The utility model discloses a growth device for preparing silicon carbide single crystal by adopting PVT method, relating to the technical field of preparation and crystal growth of silicon carbide single crystal, comprising a sealed cavity, a heating structure, a heat preservation structure, a temperature measuring mechanism, a rotating mechanism and a lifting mechanism; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealing cavity; the crucible is arranged in the heat insulation structure, and the seed crystal is supported in the crucible; the rotating mechanism is used for driving the crucible to rotate, and the lifting mechanism is used for driving the crucible to lift, or the rotating mechanism is used for driving the seed crystal support to rotate, and the lifting mechanism is used for driving the seed crystal support to lift. The heating structure can realize the respective heating of the bottom, the periphery and the top of the crucible, and can realize the adjustment of radial temperature gradient and axial temperature gradient by adjusting the power of a single heating resistor, so that the radial temperature gradient and the axial temperature gradient around the crucible are in the most appropriate state, and the growth of crystals can be better promoted.
Description
Technical Field
The utility model relates to a preparation and crystal growth technical field of carborundum single crystal especially relate to an adopt PVT method to prepare growth device of carborundum single crystal.
Background
The silicon carbide is a high-quality wide-band-gap semiconductor material, has the advantages of wide forbidden band, high breakdown electric field, high thermal conductivity, high saturated electron drift rate and the like, and can meet the requirements of high-temperature, high-power, low-loss and large-diameter devices. Silicon carbide single crystals cannot be formed by a melting method, and a physical vapor transport method, which is a sublimation growth technique based on a modified Lely method, is a common method for obtaining silicon carbide single crystals. The growth principle of the silicon carbide single crystal prepared by the PVT method is as follows: the high-purity silicon carbide powder source is decomposed at high temperature to form gaseous substances (mainly Si and SiC)2、Si2C, etc.) which are driven by supersaturation and sublimated to the seed crystal at the cold end for growth. The degree of supersaturation is caused by the temperature gradient between the seed crystal and the powder source.
For the growth device in the prior art, the heating mode mostly adopts single-coil medium-frequency induction heating, in the crystal growth process, the induction coil controls the temperature by adjusting the power of the coil and the relative position of the coil and the crucible, so that a proper temperature gradient is generated at the position of a silicon carbide source material and a seed crystal in the crucible, the crystal can continuously grow, the flexibility of the temperature adjustment of the induction coil for heating is very limited, when the induction coil moves axially, on one hand, the axial temperature can be adjusted, meanwhile, the radial temperature gradient can be changed along with the axial temperature gradient, the induction coil has certain linkage when adjusting the temperature, the temperature control in the growth process is not accurate enough, the growth quality and the growth speed of the crystal can be influenced, the growth of large-size high-quality crystals is not facilitated, and the problem can be solved by the graphite heating mode.
Disclosure of Invention
In order to solve the technical problems, the utility model provides a growth device for preparing silicon carbide single crystal by adopting PVT method, which uses graphite resistance heating to make the temperature regulation of crystal growth more flexible and controllable, and more simply and accurately controls a crucible to reach proper axial and radial temperature gradients; the defects of crystal growth can be effectively reduced, and the quality of the crystal is ensured.
In order to achieve the above object, the utility model provides a following scheme:
the utility model provides a growth device for preparing silicon carbide single crystal by adopting PVT method, which comprises a sealed cavity, a heating structure, a heat preservation structure, a temperature measuring mechanism, a rotating mechanism and a lifting mechanism; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealed cavity; the crucible is arranged in the heat insulation structure, and the seed crystal support is arranged in the crucible;
the rotating mechanism is used for driving the crucible to rotate, the lifting mechanism is used for driving the crucible to lift, or the rotating mechanism is used for driving the seed crystal support to rotate, and the lifting mechanism is used for driving the seed crystal support to lift.
Optionally, the rotary lifting mechanism is arranged at the bottom or the top of the crucible; or the rotary lifting mechanism is arranged at the upper part in the crucible, and the seed crystal support is arranged at the bottom of the rotary lifting mechanism.
Optionally, the sealed cavity includes a cavity, an upper flange and a lower flange, the upper flange is openably disposed at the top of the cavity, and the lower flange is openably disposed at the bottom of the cavity; an air pumping hole is formed in the cavity.
Optionally, the heating structure includes an upper heating area, a lower heating area and a middle heating area; the upper heating zone, the lower heating zone and the middle heating zone operate independently or in combination; the upper heating area is arranged at the inner upper part of the heat insulation structure; the lower heating area is arranged at the bottom of the crucible; the middle heating area is arranged around the crucible.
Optionally, the upper heating area, the lower heating area and the middle heating area each include a plurality of heating resistors that operate independently or in combination.
Optionally, the temperature measuring mechanism includes an upper temperature measuring device, a lower temperature measuring device and a middle temperature measuring device, the upper temperature measuring device and the lower temperature measuring device are respectively disposed at the top and the bottom of the sealed cavity, and the middle temperature measuring device is located in the middle of the sealed cavity.
Optionally, the upper temperature measuring device, the lower temperature measuring device and the middle temperature measuring device are infrared thermometers or thermocouples.
Optionally, the sealing cavity is of a double-jacket water cooling structure.
The utility model discloses for prior art gain following technological effect:
the growth device for preparing the silicon carbide single crystal by adopting the PVT method in the utility model mainly comprises a sealed cavity, a heating structure, a heat preservation structure, a temperature measuring mechanism and a rotary lifting mechanism; the heating structure can realize the respective heating of the bottom, the periphery and the top of the crucible, and can realize the accurate adjustment of radial temperature gradient and axial temperature gradient by adjusting the power of a single or combined heating resistor, and has larger adjustment amplitude, thereby being beneficial to the control of the temperature of the SiC source material and better promoting the growth of crystals.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a growing apparatus for preparing a silicon carbide single crystal by a PVT method according to the present invention;
FIG. 2 is a schematic structural diagram of a heating structure in a growth apparatus for preparing silicon carbide single crystals by a PVT method according to the present invention;
FIG. 3 is a schematic plan view showing a structure in which the number of resistances in an upper heating region or a lower heating region of a growth apparatus for producing a silicon carbide single crystal by the PVT method according to the present invention is 2;
FIG. 4 is a schematic plan view showing another structure in which the number of resistances in an upper heating region or a lower heating region of a growth apparatus for producing a silicon carbide single crystal by the PVT method according to the present invention is 2;
FIG. 5 is a schematic structural view showing a first arrangement position of a rotary lifting mechanism in a growth apparatus for producing a silicon carbide single crystal by the PVT method according to the present invention;
FIG. 6 is a schematic structural view showing a second arrangement position of a rotary lifting mechanism in a growth apparatus for producing a silicon carbide single crystal by the PVT method according to the present invention;
FIG. 7 is a schematic structural diagram of a third arrangement position of a rotary lifting mechanism in a growth apparatus for preparing a silicon carbide single crystal by a PVT method according to the present invention.
FIG. 8 is a schematic view showing the principle of the combination adjustment (two sets) of the heating means in the growth apparatus for producing a silicon carbide single crystal according to the present invention.
Description of reference numerals: 1. an upper temperature measuring device; 2. a lower temperature measuring device; 3. a heating structure; 31. an upper heating zone; 32. a middle heating zone; 33. a lower heating zone; 4. a seed crystal support; 5. a crucible; 6. a heat preservation structure; 7. sealing the cavity; 8. a rotation mechanism; 9. a middle temperature measuring device; 10. a lifting mechanism; 11. a seed crystal rotating mechanism; 12. a seed crystal lifting mechanism; 13. an electric motor.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1, the present embodiment provides a growth apparatus for preparing a silicon carbide single crystal by a PVT method, including a sealed cavity 7, a heating structure 3, a thermal insulation structure 6, and a temperature measurement mechanism; the heat insulation structure 6 is arranged in the sealed cavity 7; the heating structure 3 is arranged in the heat insulation structure 6, and the temperature measuring mechanism is arranged on the sealed cavity 7; the crucible 5 is arranged in the heat insulation structure 6, and the seed crystal holder 4 is arranged in the crucible 5;
the sealing cavity is of a double-jacket water cooling structure.
The heating structure 3 comprises an upper heating zone 31, a lower heating zone 33 and a middle heating zone 32; the upper heating zone 31, the lower heating zone 33 and the middle heating zone 32 operate independently; the upper heating area 31 is arranged at the inner upper part of the heat preservation structure 6; the lower heating zone 33 is provided at the bottom of the crucible 5; the central heating zone 32 is disposed around the crucible 5.
The upper heating area 31, the lower heating area 33 and the middle heating area 32, the number of the resistor groups of the three heating areas is 0-n, and the number of the resistors of at least two areas is greater than 0. For the upper heating area 31, when the number of the resistors is multiple, the power supply of each heating resistor is respectively controlled, the power of each power supply can be adjusted, and the radial temperature gradient of the seed crystal can be adjusted, and when the number of the resistors of the upper heating area 31 is enough, the radial temperature gradient of the seed crystal can approach 0; for the middle heating area 32, when the number of the resistors is multiple, the power supply of each heating resistor can be respectively controlled, the power of each power supply can be adjusted, the axial temperature gradient of the crucible 5 can be adjusted, when the number of the resistors of the middle heating area 32 is enough, the axial temperature gradient of the crucible 5 can be uniformly changed, and the axial temperature gradient can be more accurately controlled; for the lower heating area 33, when the number of the resistors is multiple, the power supply of each heating resistor can be respectively controlled, the power of each power supply can be adjusted, the radial temperature gradient of the bottom of the crucible 5 (at the position of the SiC source material) can be adjusted, and when the number of the resistors of the lower heating area 33 is enough, the radial temperature gradient of the bottom of the crucible 5 can approach to 0; alternatively, the resistances of each region may be adjusted in combination, for example, a group of resistances is set as a main heating resistance, the other resistances are auxiliary heating resistances, the power of the auxiliary heating resistances is electrically realized, and the output of the power is the percentage of the main heating resistance, and the schematic structural diagram may be as shown in fig. 8. Thus being beneficial to controlling the temperature of the SiC source material and promoting the growth of crystals better. In the above-described embodiment, when the number of the upper heating resistors and the lower heating resistors is 2, the schematic plan view of the resistor structure may be as shown in fig. 3 or 4.
The heating structure comprises an upper heating area, a lower heating area and a middle heating area; the upper heating zone, the lower heating zone and the middle heating zone operate independently or in combination; the upper heating area is arranged at the inner upper part of the heat insulation structure; the lower heating area is arranged at the bottom of the crucible; the middle heating area is arranged around the crucible.
The upper heating zone 31, the lower heating zone 33, and the middle heating zone 32 each include a plurality of heating resistors that operate independently or in combination. One of the ways of combined regulation: the method is characterized in that one group of resistors is set as a main heating resistor, other resistors are set as auxiliary heating resistors, the power of the auxiliary heating resistors is output in an electric appliance mode and is the percentage of the main heating resistor, and when the two groups of resistors are arranged, a structural schematic diagram can be shown in fig. 8.
When n is 2, the upper heating zone 31 or the lower heating zone 33 has a structure as shown in fig. 3 and 4, and the two heating resistors may be operated independently or in combination.
The temperature measuring mechanism comprises an upper temperature measuring device 1, a lower temperature measuring device 2 and a middle temperature measuring device 9, wherein the upper temperature measuring device 1 and the lower temperature measuring device 2 are respectively arranged at the top and the bottom of the sealed cavity 7, and the middle temperature measuring device 9 is positioned in the middle of the sealed cavity 7. The number of temperature measuring devices depends on the number of heating resistors operating independently or in combination.
The upper temperature measuring device 1, the lower temperature measuring device 2 and the middle temperature measuring device are all infrared thermometers or thermocouples.
Example two:
the present embodiment is an embodiment improved on the basis of the first embodiment.
As shown in fig. 5 and 6, the rotating mechanism 8 is used for driving the crucible 5 to rotate, the lifting mechanism 10 is used for driving the crucible 5 to lift, and the rotating shaft and the sealed cavity are sealed by a bellows.
In a more specific embodiment, the rotating mechanism 8 is disposed at the bottom or top of the crucible 5 (fig. 5 or 6). The rotating mechanism 8 can comprise a rotating motor and a transmission mechanism, and the rotating motor is in transmission connection with the crucible 5 through the transmission mechanism and drives the crucible 5 to rotate; the transmission mechanism can adopt a belt pulley mode and can also adopt other transmission modes such as a gear and the like.
The lifting mechanism 10 comprises a screw rod and a transmission mechanism, drives the crucible 5 to lift along the vertical direction, and can adopt a motion module or other modes.
The transmission mechanism is conventional technology, and the specific structure is not described in detail.
In the crystal growth process, the crucible 5 is integrally lifted and matched with a heating device to adjust the axial temperature of the crucible 5, so that the continuous growth of crystals is promoted, and meanwhile, the crucible 5 is in an even thermal field through the uniform rotation of the crucible 5, so that the growth of the crystals is more even.
As shown in fig. 7, in the present embodiment, the seed crystal rotating mechanism 11 is used for driving the rotation of the seed crystal holder 4, and the seed crystal lifting mechanism 12 is used for driving the lifting of the seed crystal holder 4.
In the process of crystal growth, the temperature of the seed crystal is adjusted by lifting the seed crystal holder 4 and matching with the heating structure 3, so that the surface of the seed crystal and the SiC source material have proper temperature gradient, and the continuous growth of the crystal is promoted. When SiC source materials are sublimated in a heating state, SiC gas rises to the seed crystal, meanwhile, the seed crystal rotating mechanism 11 drives the seed crystal to rotate at a constant speed, the seed crystal lifting mechanism 12 drives the seed crystal support 4 to move up and down, and fresh SiC gas with flow velocity is arranged on the surface of the seed crystal or the surface of the grown silicon carbide crystal, so that the SiC gas can be uniformly contacted and grown with the seed crystal, the growth speed of the silicon carbide can be improved to a certain extent, and the growth quality of the silicon carbide is improved.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (8)
1. A growth device for preparing silicon carbide single crystal by adopting PVT method is characterized by comprising a sealed cavity, a heating structure, a heat preservation structure, a temperature measuring mechanism, a rotating mechanism and a lifting mechanism; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealed cavity; the crucible is arranged in the heat insulation structure, and the seed crystal support is arranged in the crucible;
the rotating mechanism is used for driving the crucible to rotate, the lifting mechanism is used for driving the crucible to lift, or the rotating mechanism is used for driving the seed crystal support to rotate, and the lifting mechanism is used for driving the seed crystal support to lift.
2. A growth apparatus for producing a silicon carbide single crystal by the PVT method according to claim 1, wherein said rotation mechanism and said elevating mechanism are provided at a bottom or a top of said crucible; or the rotating mechanism and the lifting mechanism are arranged at the upper part in the crucible.
3. The growth apparatus for producing a silicon carbide single crystal by the PVT process as recited in claim 1, wherein the sealed chamber includes a chamber body, an upper flange openably disposed at a top of the chamber body, and a lower flange openably disposed at a bottom of the chamber body; an air pumping hole is formed in the cavity.
4. A growth apparatus for producing a silicon carbide single crystal by PVT method according to claim 1, wherein said heating structure comprises an upper heating region, a lower heating region and a middle heating region; the upper heating zone, the lower heating zone and the middle heating zone operate independently or in combination; the upper heating area is arranged at the inner upper part of the heat insulation structure; the lower heating area is arranged at the bottom of the crucible; the middle heating area is arranged around the crucible.
5. The growth apparatus for producing a silicon carbide single crystal by the PVT method as recited in claim 4, wherein each of the upper heating zone, the lower heating zone and the middle heating zone includes a plurality of heating resistors which operate independently or in combination.
6. The growth apparatus for preparing a silicon carbide single crystal by the PVT method according to claim 1, wherein the temperature measuring mechanism comprises an upper temperature measuring device, a lower temperature measuring device and a middle temperature measuring device, the upper temperature measuring device and the lower temperature measuring device are respectively arranged at the top and the bottom of the sealed cavity, and the middle temperature measuring device is located in the middle of the sealed cavity.
7. The growth apparatus for producing a silicon carbide single crystal by the PVT method according to claim 6, wherein the upper temperature measuring device, the lower temperature measuring device, and the middle temperature measuring device are infrared thermometers or thermocouples.
8. The growth apparatus for silicon carbide single crystal growth using PVT method according to claim 1, wherein the sealed chamber structure is a double jacket water-cooled structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106549A (en) * | 2021-05-20 | 2021-07-13 | 宁波恒普真空技术有限公司 | Growth device for preparing silicon carbide single crystal by adopting PVT method |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| WO2024055502A1 (en) * | 2022-09-14 | 2024-03-21 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method for large-size silicon carbide crystal |
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2021
- 2021-05-20 CN CN202121084029.4U patent/CN215289039U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113106549A (en) * | 2021-05-20 | 2021-07-13 | 宁波恒普真空技术有限公司 | Growth device for preparing silicon carbide single crystal by adopting PVT method |
| CN114525587A (en) * | 2022-04-22 | 2022-05-24 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| CN114525587B (en) * | 2022-04-22 | 2022-07-19 | 中电化合物半导体有限公司 | Equipment and method for growing silicon carbide single crystal based on PVT method |
| WO2024055502A1 (en) * | 2022-09-14 | 2024-03-21 | 青禾晶元(天津)半导体材料有限公司 | Growth device and growth method for large-size silicon carbide crystal |
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Address after: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee after: Ningbo Hengpu Technology Co.,Ltd. Address before: No. 365, Xinxing 1st Road, Cixi hi tech Industrial Development Zone, Ningbo City, Zhejiang Province, 315300 Patentee before: Ningbo Hengpu Vacuum Technology Co.,Ltd. |