CN114959900A - Silicon carbide single crystal growth device with radial temperature adjusting ring - Google Patents

Silicon carbide single crystal growth device with radial temperature adjusting ring Download PDF

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CN114959900A
CN114959900A CN202210390888.9A CN202210390888A CN114959900A CN 114959900 A CN114959900 A CN 114959900A CN 202210390888 A CN202210390888 A CN 202210390888A CN 114959900 A CN114959900 A CN 114959900A
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thermal insulation
insulation structure
cavity
silicon carbide
single crystal
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刘鹏
徐文立
潘建栋
袁晓芸
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Ningbo Hiper Vacuum Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
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    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
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    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30B23/002Controlling or regulating

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Abstract

本发明公开一种带径向调温环的碳化硅单晶生长装置,涉及碳化硅单晶的制备及晶体生长技术领域。该带径向调温环的碳化硅单晶生长装置包括密封腔、保温结构、加热结构、坩埚和均温环等;坩埚用于放置源料,籽晶安装于坩埚顶部。多组加热机构和保温结构用于调节籽晶处径向温度梯度。该带径向调温环的碳化硅单晶生长装置能够实时动态调整籽晶处径向温度梯度,且调节方法简单,效应速度快,可有效控制碳化硅单晶晶锭的生长面凹凸程度,有利于大尺寸碳化硅单晶晶锭的生长。

Figure 202210390888

The invention discloses a silicon carbide single crystal growth device with a radial temperature adjusting ring, which relates to the technical field of silicon carbide single crystal preparation and crystal growth. The silicon carbide single crystal growth device with radial temperature adjustment ring includes a sealed cavity, a heat preservation structure, a heating structure, a crucible and a temperature uniformity ring, etc. The crucible is used for placing source materials, and the seed crystal is installed on the top of the crucible. Multiple sets of heating mechanisms and thermal insulation structures are used to adjust the radial temperature gradient at the seed crystal. The silicon carbide single crystal growth device with a radial temperature adjustment ring can dynamically adjust the radial temperature gradient at the seed crystal in real time, and the adjustment method is simple, the effect speed is fast, and the unevenness of the growth surface of the silicon carbide single crystal ingot can be effectively controlled. It is beneficial to the growth of large-sized silicon carbide single crystal ingots.

Figure 202210390888

Description

一种带径向调温环的碳化硅单晶生长装置A silicon carbide single crystal growth device with radial temperature adjustment ring

技术领域technical field

本发明涉及碳化硅单晶的制备及晶体生长技术领域,特别是涉及一种带径向调温环的碳化硅单晶生长装置。The invention relates to the technical field of preparation and crystal growth of silicon carbide single crystal, in particular to a silicon carbide single crystal growth device with a radial temperature adjustment ring.

背景技术Background technique

碳化硅是一种优质的宽带隙半导体材料,具有宽禁带、高击穿电场、高热导率、高饱和电子漂移速率等优点,可以满足高温、大功率、低损耗大直径器件的需求。碳化硅单晶无法经过熔融法形成,基于改进型Lely法的升华生长技术——物理气相传输法(PVT法)是获得碳化硅单晶的常用方法。PVT法制备碳化硅单晶的生长原理是:高纯碳化硅粉源在高温下分解形成气态物质(主要为Si、SiC2、Si2C等),这些气态物质在过饱和度的驱动下,升华至冷端的籽晶处进行生长。过饱和度是由籽晶与粉源之间的温度梯度引起的。Silicon carbide is a high-quality wide-bandgap semiconductor material with the advantages of wide band gap, high breakdown electric field, high thermal conductivity, and high saturation electron drift rate, which can meet the needs of high-temperature, high-power, low-loss and large-diameter devices. Silicon carbide single crystals cannot be formed by the melting method. The sublimation growth technology based on the improved Lely method, the physical vapor transport method (PVT method), is a common method for obtaining silicon carbide single crystals. The growth principle of silicon carbide single crystal prepared by PVT method is: high-purity silicon carbide powder source is decomposed at high temperature to form gaseous substances (mainly Si, SiC 2 , Si 2 C, etc.), and these gaseous substances are driven by supersaturation. Sublimation to the seed crystal at the cold end for growth. Supersaturation is caused by the temperature gradient between the seed crystal and the powder source.

目前常用的感应加热法,在晶体生长过程中,通过调整感应线圈的功率和感应线圈与坩埚的轴向相对位置来进行温度的控制,使坩埚中碳化硅粉源处和籽晶处产生适当的温度梯度,使晶体能持续生长,感应加热法温度调节的灵活性非常局限,当感应线圈进行轴向移动时,一方面可以调整轴向温度,但同时径向的温度梯度也会随之改变,无法单独控制籽晶径向温度梯度。而目前市面上出现的电阻加热晶体生长炉,虽然径向温度和轴向温度耦合度低,但是径向温度无法实现动态区域可调。In the current commonly used induction heating method, during the crystal growth process, the temperature is controlled by adjusting the power of the induction coil and the axial relative position of the induction coil and the crucible, so that the source of silicon carbide powder in the crucible and the seed crystal produce appropriate temperature. The temperature gradient enables the crystal to grow continuously. The flexibility of temperature adjustment of the induction heating method is very limited. When the induction coil moves axially, the axial temperature can be adjusted on the one hand, but the radial temperature gradient will also change accordingly. The seed radial temperature gradient cannot be controlled independently. However, the resistance heating crystal growth furnaces currently on the market have a low degree of coupling between the radial temperature and the axial temperature, but the radial temperature cannot be adjusted in the dynamic region.

有鉴于此,研发设计出一种能够解决上述技术问题的可径向调节温度梯度的碳化硅单晶生长装置显得尤为重要。In view of this, it is particularly important to develop and design a silicon carbide single crystal growth device that can solve the above technical problems and can adjust the temperature gradient radially.

发明内容SUMMARY OF THE INVENTION

为解决以上技术问题,本发明提供一种带径向调温环的碳化硅单晶生长装置,可实时动态调整籽晶径向温度,并且调节简单,动态响应迅速,从而减小碳化硅单晶生长过程中晶体的径向温度梯度,可有效降低晶体生长的缺陷,保证了晶体的质量。In order to solve the above technical problems, the present invention provides a silicon carbide single crystal growth device with a radial temperature adjustment ring, which can dynamically adjust the radial temperature of the seed crystal in real time, with simple adjustment and rapid dynamic response, thereby reducing the size of the silicon carbide single crystal. The radial temperature gradient of the crystal during the growth process can effectively reduce the defects of crystal growth and ensure the quality of the crystal.

为实现上述目的,本发明提供了如下方案:For achieving the above object, the present invention provides the following scheme:

本发明提供一种带径向调温环的碳化硅单晶生长装置,包括密封腔、加热结构、保温结构和测温机构;所述保温结构设置于所述密封腔内;所述加热结构设置于所述保温结构内,所述测温机构设置于所述密封腔上;坩埚设置于所述保温结构内,籽晶设置于所述坩埚内;所述加热结构与所述坩埚之间有均温环。The invention provides a silicon carbide single crystal growth device with a radial temperature adjustment ring, which includes a sealing cavity, a heating structure, a heat preservation structure and a temperature measurement mechanism; the heat preservation structure is arranged in the sealing cavity; the heating structure is provided with In the thermal insulation structure, the temperature measuring mechanism is arranged on the sealed cavity; the crucible is arranged in the thermal insulation structure, and the seed crystal is arranged in the crucible; there is a uniform space between the heating structure and the crucible. temperature ring.

可选的,所述密封腔包括腔体、腔体上法兰和腔体下法兰,所述腔体上法兰可开启的设置于所述腔体顶部,所述腔体下法兰设置于所述腔体底部;所述腔体上设置有腔体抽气口。Optionally, the sealed cavity includes a cavity, an upper flange of the cavity and a lower flange of the cavity, the upper flange of the cavity can be opened on the top of the cavity, and the lower flange of the cavity is set at the bottom of the cavity; the cavity is provided with a cavity air outlet.

可选的,所述加热结构包括上副加热电阻、下主加热电阻和径向调温电阻;所述上副加热电阻、所述下主加热电阻和所述径向调温电阻独立运行;所述上副加热电阻设置于所述保温结构内上部;所述下主加热电阻设置于所述保温结构内中下部;所述径向调温电阻的上端面与所述籽晶的上表面相平齐,所述上副加热电阻、所述下主加热电阻和所述径向调温电阻分别配置一组引出电极。Optionally, the heating structure includes an upper auxiliary heating resistance, a lower main heating resistance and a radial temperature adjustment resistance; the upper auxiliary heating resistance, the lower main heating resistance and the radial temperature adjustment resistance operate independently; The upper auxiliary heating resistor is arranged in the upper part of the thermal insulation structure; the lower main heating resistor is arranged in the middle and lower part of the thermal insulation structure; the upper end face of the radial temperature regulating resistor is flush with the upper surface of the seed crystal The upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjusting resistor are respectively provided with a set of lead-out electrodes.

可选的,所述保温结构包括外部保温结构和内部保温结构,外部保温结构包括外部保温结构上盖、外部保温结构筒体和外部保温结构下盖,内部保温结构分为第一内部保温结构、第二内部保温结构、第三内部保温结构和第四内部保温结构;所述外部保温结构上盖设置于所述外部保温结构筒体顶部,所述外部保温结构下盖设置于所述外部保温结构筒体底部,所述第一内部保温结构及第二内部保温结构设置于所述坩埚上部,所述第三内部保温结构设置于所述坩埚侧面,所述第四内部保温结构设置于所述坩埚下部。Optionally, the thermal insulation structure includes an external thermal insulation structure and an internal thermal insulation structure, the external thermal insulation structure includes an external thermal insulation structure upper cover, an external thermal insulation structure cylinder and an external thermal insulation structure lower cover, and the internal thermal insulation structure is divided into a first internal thermal insulation structure, The second internal thermal insulation structure, the third internal thermal insulation structure and the fourth internal thermal insulation structure; the upper cover of the external thermal insulation structure is arranged on the top of the cylinder of the external thermal insulation structure, and the lower cover of the external thermal insulation structure is arranged on the external thermal insulation structure At the bottom of the cylinder, the first internal thermal insulation structure and the second internal thermal insulation structure are arranged on the upper part of the crucible, the third internal thermal insulation structure is arranged on the side of the crucible, and the fourth internal thermal insulation structure is arranged on the crucible lower part.

可选的,所述测温机构包括上测温设备、下测温设备和侧面测温设备,所述上测温设备、所述下测温设备和所述侧面测温设备分别设置于所述密封腔顶部、底部和侧面。Optionally, the temperature measurement mechanism includes an upper temperature measurement device, a lower temperature measurement device, and a side temperature measurement device, and the upper temperature measurement device, the lower temperature measurement device, and the side temperature measurement device are respectively arranged on the Seal the top, bottom and sides of the cavity.

可选的,所述上测温设备、所述侧面测温设备和所述下测温设备均为红外测温仪或热电偶。Optionally, the upper temperature measurement device, the side temperature measurement device and the lower temperature measurement device are all infrared thermometers or thermocouples.

可选的,所述密封腔上设置有充气口。Optionally, an inflation port is provided on the sealing cavity.

可选的,所述均温环采用石墨材料或碳碳复合材料或高温陶瓷或二硼化钛或碳化钛材料制作。Optionally, the temperature uniformity ring is made of graphite material or carbon-carbon composite material or high temperature ceramic or titanium diboride or titanium carbide material.

本发明相对于现有技术取得了以下技术效果:The present invention has achieved the following technical effects with respect to the prior art:

本发明中的带径向调温环的碳化硅单晶生长装置,主要结构包括密封腔、加热结构、保温结构、测温机构;加热结构能够实现对坩埚的底部、四周和顶部的加热,上副加热电阻可控制坩埚顶部温度、下主加热电阻可控制坩埚底部温度,径向调温电阻可控制籽晶径向温度,在加热结构和坩埚之间设置一层采用石墨材料或碳碳复合材料或高温陶瓷或二硼化钛或碳化钛材料制作的均温环,能有效保证温度变化的均匀性,结合测温机构对坩埚顶部、坩埚顶部侧面和坩埚底部分别进行温度测量,实现籽晶处径向温度的实时动态可调,从而减小碳化硅单晶生长过程中晶体的径向温度梯度和应力,可有效降低晶体生长的缺陷,保证晶体的质量。The silicon carbide single crystal growth device with radial temperature adjustment ring in the present invention mainly includes a sealed cavity, a heating structure, a heat preservation structure and a temperature measuring mechanism; the heating structure can realize the heating of the bottom, surrounding and top of the crucible, and The auxiliary heating resistor can control the temperature at the top of the crucible, the lower main heating resistor can control the temperature at the bottom of the crucible, and the radial temperature adjusting resistor can control the radial temperature of the seed crystal. A layer of graphite material or carbon-carbon composite material is arranged between the heating structure and the crucible. Or high temperature ceramic or titanium diboride or titanium carbide material made of temperature uniformity ring, can effectively ensure the uniformity of temperature change, combined with the temperature measurement mechanism to measure the temperature of the crucible top, crucible top side and crucible bottom respectively, to achieve the seed crystal The radial temperature can be dynamically adjusted in real time, thereby reducing the radial temperature gradient and stress of the crystal during the growth of silicon carbide single crystal, which can effectively reduce the defects of crystal growth and ensure the quality of the crystal.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

图1为本发明带径向调温环的碳化硅单晶生长装置的结构示意图。FIG. 1 is a schematic structural diagram of a silicon carbide single crystal growth device with a radial temperature adjustment ring according to the present invention.

图2为本发明带径向调温环的碳化硅单晶生长装置的保温结构示意图。FIG. 2 is a schematic diagram of the thermal insulation structure of the silicon carbide single crystal growth device with a radial temperature adjustment ring according to the present invention.

图3为本发明带径向调温环的碳化硅单晶生长装置的加热结构示意图。FIG. 3 is a schematic view of the heating structure of the silicon carbide single crystal growth device with radial temperature adjustment ring according to the present invention.

附图标记说明:1、上测温设备;2、上充气口;3、腔体上法兰;4、腔体抽气口;5、腔体;6、腔体下法兰;7、下充气口;8、下测温设备;9、引出电极;10、保温结构;101、外部保温结构上盖;102、外部保温结构筒体;103、外部保温结构下盖;104、第一内部保温结构;105、第二内部保温结构;106、第三内部保温结构;107、第四内部保温结构;11、加热结构;111、上副加热电阻;112、径向调温电阻;113、下主加热电阻;12、坩埚;13、均温环;14、侧面测温设备;15、籽晶。Explanation of reference numerals: 1. Upper temperature measuring device; 2. Upper air inlet; 3. Upper flange of cavity; 4. Air suction port of cavity; 5. Cavity; 6. Lower flange of cavity; 7. Lower inflation 8. Lower temperature measuring equipment; 9. Lead-out electrode; 10. Thermal insulation structure; 101. Upper cover of external thermal insulation structure; 102. External thermal insulation structure cylinder; 103. Lower cover of external thermal insulation structure; 104. First internal thermal insulation structure 105, the second internal thermal insulation structure; 106, the third internal thermal insulation structure; 107, the fourth internal thermal insulation structure; 11, the heating structure; 111, the upper auxiliary heating resistance; Resistance; 12, crucible; 13, temperature uniformity ring; 14, side temperature measurement equipment; 15, seed crystal.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

实施例一:Example 1:

如图1所示,本实施例提供一种带径向调温环的碳化硅单晶生长装置,包括密封腔、加热结构、保温结构、测温机构;所述保温结构设置于所述密封腔内;所述加热结构设置于所述保温结构内,所述测温机构设置于所述密封腔上;坩埚12设置于所述保温结构内,籽晶15设置于所述坩埚12内;所述加热结构与所述坩埚12之间有均温环13。As shown in FIG. 1 , this embodiment provides a silicon carbide single crystal growth device with a radial temperature adjustment ring, which includes a sealed cavity, a heating structure, a thermal insulation structure, and a temperature measurement mechanism; the thermal insulation structure is arranged in the sealed cavity the heating structure is arranged in the heat preservation structure, the temperature measurement mechanism is arranged on the sealed cavity; the crucible 12 is arranged in the heat preservation structure, and the seed crystal 15 is arranged in the crucible 12; the There is a temperature equalizing ring 13 between the heating structure and the crucible 12 .

于本具体实施例中,所述密封腔包括腔体5、腔体上法兰3和腔体下法兰6,所述腔体上法兰3可开启的设置于所述腔体5顶部,所述腔体下法兰6设置于所述腔体5底部;所述腔体5上设置有腔体抽气口4。腔体上法兰3和腔体下法兰6与腔体5之间可以通过螺栓连接,腔体下法兰6也可以与腔体5进行焊接连接,能够保证腔体上法兰3和下法兰6与腔体5的连接强度并保证连接处的密封性能即可。腔体抽气口4用于对密封腔内部抽真空,使晶体生长达到必要的压力环境。In this specific embodiment, the sealed cavity includes a cavity 5, an upper flange 3 of the cavity and a lower flange 6 of the cavity, and the upper flange 3 of the cavity is openably arranged on the top of the cavity 5, The lower flange 6 of the cavity is arranged at the bottom of the cavity 5 ; the cavity 5 is provided with a cavity air outlet 4 . The upper flange 3 of the cavity and the lower flange 6 of the cavity can be connected with the cavity 5 by bolts, and the lower flange 6 of the cavity can also be welded to the cavity 5, which can ensure the upper flange 3 of the cavity and the lower flange of the cavity 5. The connection strength between the flange 6 and the cavity 5 is sufficient to ensure the sealing performance of the connection. The cavity suction port 4 is used to evacuate the inside of the sealed cavity, so that the crystal growth can reach the necessary pressure environment.

所述加热结构11包括上副加热电阻111、下主加热电阻113和径向调温电阻112;所述上副加热电阻111、所述下主加热电阻113和所述径向调温电阻112独立运行;所述上副加热电阻111设置于所述保温结构内上部;所述下主加热电阻113设置于保温结构内中下部;所述径向调温电阻112的上端面与籽晶15的上表面相平齐(径向调温电阻112与籽晶15的相对位置根据工艺需求进行调整);通过调节径向调温电阻112的功率,可单独控制籽晶径向方向的温度梯度;三组电阻分别有一组引出电极,分别是对应上副加热电阻111、下主加热电阻113和径向调温电阻112的上引出电极、下引出电极和中引出电极;其中中引出电极的布置方式优先考虑穿过腔体下法兰,与下法兰采用法兰和O型圈结合的方式进行密封连接。由于径向调温电阻112位于密封腔内的部分温度超过2000摄氏度,中引出电极在密封腔外的部分接近于室内温度(20摄氏度左右),两者温差较大,所以,较长的中引出电极可以让中引出电极的温度变化有一个较为缓慢的过渡过程,降低能耗。也可选择中引出电极布置方式为径向引出,穿过腔体,从腔体侧面引出。The heating structure 11 includes an upper auxiliary heating resistor 111, a lower main heating resistor 113 and a radial temperature adjusting resistor 112; the upper auxiliary heating resistor 111, the lower main heating resistor 113 and the radial temperature adjusting resistor 112 are independent Operation; the upper auxiliary heating resistor 111 is arranged in the upper part of the insulation structure; the lower main heating resistance 113 is arranged in the middle and lower part of the insulation structure; The surfaces are flush (the relative position of the radial temperature adjustment resistor 112 and the seed crystal 15 is adjusted according to the process requirements); by adjusting the power of the radial temperature adjustment resistor 112, the temperature gradient in the radial direction of the seed crystal can be individually controlled; three groups The resistors respectively have a set of lead-out electrodes, which are the upper lead-out electrodes, the lower lead-out electrodes and the middle lead-out electrodes corresponding to the upper auxiliary heating resistance 111, the lower main heating resistance 113 and the radial temperature adjusting resistance 112; the arrangement of the middle lead-out electrodes is given priority. Pass through the lower flange of the cavity, and seal the connection with the lower flange by the combination of flange and O-ring. Since the temperature of the part of the radial temperature regulating resistor 112 located in the sealed cavity exceeds 2000 degrees Celsius, the part of the middle lead-out electrode outside the sealed cavity is close to the indoor temperature (about 20 degrees Celsius), and the temperature difference between the two is relatively large. Therefore, the longer middle lead out The electrode can make the temperature change of the middle-extracted electrode have a relatively slow transition process and reduce energy consumption. It is also possible to choose the arrangement of the middle-extracted electrodes as radial lead-out, passing through the cavity, and leading out from the side of the cavity.

所述保温结构10包括外部保温结构和内部保温结构,外部保温结构包括外部保温结构上盖101、外部保温结构筒体102和外部保温结构下盖103,内部保温结构分为第一内部保温结构104、第二内部保温结构105、第三内部保温结构106和第四内部保温结构107;所述外部保温结构上盖101设置于所述外部保温结构筒体102顶部,所述外部保温结构下盖103设置于所述外部保温结构筒体102底部,所述第一内部保温结构104及第二内部保温结构105设置于所述坩埚12上部,所述第三内部保温结构106设置于所述坩埚12侧面,所述第四内部保温结构107设置于所述坩埚12下部。The thermal insulation structure 10 includes an external thermal insulation structure and an internal thermal insulation structure. The external thermal insulation structure includes an external thermal insulation structure upper cover 101, an external thermal insulation structure cylinder 102 and an external thermal insulation structure lower cover 103. The internal thermal insulation structure is divided into a first internal thermal insulation structure 104. , the second internal thermal insulation structure 105, the third internal thermal insulation structure 106 and the fourth internal thermal insulation structure 107; the external thermal insulation structure upper cover 101 is arranged on the top of the external thermal insulation structure cylinder 102, and the external thermal insulation structure lower cover 103 The first internal thermal insulation structure 104 and the second internal thermal insulation structure 105 are arranged on the upper part of the crucible 12 , and the third internal thermal insulation structure 106 is arranged on the side of the crucible 12 . , the fourth internal heat preservation structure 107 is arranged at the lower part of the crucible 12 .

所述保温结构10对整个坩埚12提供适当的温度环境,减少整个生长环境的热散失。The heat preservation structure 10 provides an appropriate temperature environment for the entire crucible 12, thereby reducing heat dissipation in the entire growth environment.

所述测温机构包括上测温设备1、侧面测温设备14和下测温设备8,所述上测温设备1和所述下测温设备8分别设置于所述密封腔顶部和底部,侧面测温设备14位于坩埚12顶部平面方向。具体的,腔体上法兰3和腔体下法兰6的中部分别设置有一测温管道,上测温设备1和下测温设备8分别设置于腔体上法兰3和腔体下法兰6上的测温管道上,侧面测温设备14用于测量坩埚12顶部侧面的温度。The temperature measurement mechanism includes an upper temperature measurement device 1, a side temperature measurement device 14 and a lower temperature measurement device 8. The upper temperature measurement device 1 and the lower temperature measurement device 8 are respectively arranged on the top and bottom of the sealed cavity, The side temperature measuring device 14 is located in the direction of the top plane of the crucible 12 . Specifically, a temperature measurement pipeline is respectively provided in the middle of the upper flange 3 of the cavity and the lower flange 6 of the cavity, and the upper temperature measurement device 1 and the lower temperature measurement device 8 are respectively arranged on the upper flange 3 of the cavity and the lower part of the cavity. On the temperature measuring pipe on the flange 6, the side temperature measuring device 14 is used to measure the temperature of the top side of the crucible 12.

腔体上法兰3上的测温管道一侧设置有上充气口2,腔体下法兰6的测温管道一侧设置有下充气口7。上充气口2和下充气口7用于输入工艺气体;更多的,可以将工艺气体当做吹扫气体吹扫测温管道,避免杂质沾染在测温管道或者测温玻璃上,影响测温准确性。An upper air inlet 2 is provided on one side of the temperature measurement pipeline on the upper flange 3 of the cavity, and a lower air inlet 7 is arranged on one side of the temperature measurement pipeline on the lower flange 6 of the cavity. The upper gas inlet 2 and the lower gas inlet 7 are used to input process gas; more, the process gas can be used as a purge gas to purge the temperature measurement pipeline to avoid contamination of impurities on the temperature measurement pipeline or temperature measurement glass, which will affect the accuracy of temperature measurement sex.

所述均温环13位于加热结构与坩埚之间,材料为石墨材料或碳碳复合材料或高温陶瓷或二硼化钛或碳化钛材料,厚度需保证整个均温环的强度,厚度可为5~10mm。由于加热结构一般为格栅状或者柱状,格栅或者柱之间会有间隙,对坩埚的加热并不均匀,会导致温度局部突变,温度变化梯度不够均匀,不利于晶体高质量的生长,增加一层均温环13,有利于轴向温度更加均匀的变化。The temperature uniformity ring 13 is located between the heating structure and the crucible, and the material is graphite material or carbon-carbon composite material or high temperature ceramics or titanium diboride or titanium carbide material. The thickness needs to ensure the strength of the entire temperature uniformity ring, and the thickness can be 5 ~10mm. Since the heating structure is generally grid-shaped or column-shaped, there are gaps between the grids or columns, and the heating of the crucible is uneven, which will lead to local sudden changes in temperature, and the temperature change gradient is not uniform enough, which is not conducive to the growth of high-quality crystals. A layer of temperature uniformity ring 13 is conducive to a more uniform change of the axial temperature.

所述上测温设备1、所述侧面测温设备14和所述下测温设备8均为红外测温仪或者热电偶。The upper temperature measuring device 1 , the side temperature measuring device 14 and the lower temperature measuring device 8 are all infrared thermometers or thermocouples.

需要说明的是,对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内,不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the above-mentioned exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. . Therefore, the embodiments are to be regarded in all respects as illustrative and not restrictive, and the scope of the invention is to be defined by the appended claims rather than the foregoing description, which are therefore intended to fall within the scope of the claims. All changes that come within the meaning and range of equivalents of , are intended to be embraced within the invention, and any reference signs in the claims shall not be construed as limiting the involved claim.

本说明书中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的一般技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处。综上所述,本说明书内容不应理解为对本发明的限制。In this specification, specific examples are used to illustrate the principles and implementations of the present invention, and the descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention; There will be changes in the specific implementation manner and application scope of the idea of the invention. In conclusion, the contents of this specification should not be construed as limiting the present invention.

Claims (8)

1.一种带径向调温环的碳化硅单晶生长装置,其特征在于,包括密封腔、加热结构、保温结构和测温机构;所述保温结构设置于所述密封腔内;所述加热结构设置于所述保温结构内,所述测温机构设置于所述密封腔上;坩埚设置于所述保温结构内,籽晶设置于所述坩埚内;所述加热结构与所述坩埚之间有均温环。1. A silicon carbide single crystal growth device with a radial temperature adjustment ring, characterized in that it comprises a sealed cavity, a heating structure, a thermal insulation structure and a temperature measurement mechanism; the thermal insulation structure is arranged in the sealed cavity; the The heating structure is set in the heat preservation structure, the temperature measuring mechanism is set on the sealed cavity; the crucible is set in the heat preservation structure, and the seed crystal is set in the crucible; the heating structure is connected with the crucible. There is a uniform temperature ring. 2.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述密封腔包括腔体、腔体上法兰和腔体下法兰,所述腔体上法兰可开启的设置于所述腔体顶部,所述腔体下法兰设置于所述腔体底部;所述腔体上设置有腔体抽气口。2 . The silicon carbide single crystal growth device with a radial temperature adjustment ring according to claim 1 , wherein the sealed cavity comprises a cavity, an upper flange of the cavity and a lower flange of the cavity, and the cavity The upper flange of the body is openably arranged on the top of the cavity, the lower flange of the cavity is arranged at the bottom of the cavity; the cavity is provided with a cavity air outlet. 3.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述加热结构包括上副加热电阻、下主加热电阻和径向调温电阻;所述上副加热电阻、所述下主加热电阻和所述径向调温电阻独立运行;所述上副加热电阻设置于所述保温结构内上部;所述下主加热电阻设置于所述保温结构内中下部;所述径向调温电阻的上端面与所述籽晶的上表面相平齐,所述上副加热电阻、所述下主加热电阻和所述径向调温电阻分别配置一组引出电极。3. The silicon carbide single crystal growth device with a radial temperature adjustment ring according to claim 1, wherein the heating structure comprises an upper auxiliary heating resistor, a lower main heating resistor and a radial temperature adjustment resistor; the The upper auxiliary heating resistance, the lower main heating resistance and the radial temperature regulating resistance operate independently; the upper auxiliary heating resistance is arranged in the upper part of the heat preservation structure; the lower main heating resistance is arranged in the heat preservation structure The middle and lower part; the upper end face of the radial temperature adjustment resistor is flush with the upper surface of the seed crystal, and the upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjustment resistor are respectively arranged in one group Extract the electrode. 4.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述保温结构包括外部保温结构和内部保温结构,外部保温结构包括外部保温结构上盖、外部保温结构筒体和外部保温结构下盖,内部保温结构分为第一内部保温结构、第二内部保温结构、第三内部保温结构和第四内部保温结构;所述外部保温结构上盖设置于所述外部保温结构筒体顶部,所述外部保温结构下盖设置于所述外部保温结构筒体底部,所述第一内部保温结构及第二内部保温结构设置于所述坩埚上部,所述第三内部保温结构设置于所述坩埚侧面,所述第四内部保温结构设置于所述坩埚下部。4 . The silicon carbide single crystal growth device with radial temperature adjusting ring according to claim 1 , wherein the thermal insulation structure comprises an external thermal insulation structure and an internal thermal insulation structure, and the external thermal insulation structure comprises an external thermal insulation structure upper cover, The external thermal insulation structure cylinder body and the external thermal insulation structure lower cover, the internal thermal insulation structure is divided into a first internal thermal insulation structure, a second internal thermal insulation structure, a third internal thermal insulation structure and a fourth internal thermal insulation structure; the external thermal insulation structure upper cover is arranged on The top of the external thermal insulation structure cylinder, the lower cover of the external thermal insulation structure is arranged on the bottom of the external thermal insulation structure cylinder, the first internal thermal insulation structure and the second internal thermal insulation structure are arranged on the upper part of the crucible, and the first internal thermal insulation structure is arranged on the top of the crucible. Three internal thermal insulation structures are arranged on the side of the crucible, and the fourth internal thermal insulation structure is arranged on the lower part of the crucible. 5.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述测温机构包括上测温设备、下测温设备和侧面测温设备,所述上测温设备、所述下测温设备和所述侧面测温设备分别设置于所述密封腔顶部、底部和侧面。5 . The silicon carbide single crystal growth device with a radial temperature adjustment ring according to claim 1 , wherein the temperature measurement mechanism comprises an upper temperature measurement device, a lower temperature measurement device and a side temperature measurement device, and the The upper temperature measuring device, the lower temperature measuring device and the side temperature measuring device are respectively arranged on the top, bottom and side of the sealed cavity. 6.根据权利要求5所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述上测温设备、所述侧面测温设备和所述下测温设备均为红外测温仪或热电偶。6 . The silicon carbide single crystal growth device with radial temperature adjustment ring according to claim 5 , wherein the upper temperature measurement device, the side temperature measurement device and the lower temperature measurement device are all infrared Thermometer or thermocouple. 7.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述密封腔上设置有充气口。7 . The silicon carbide single crystal growth device with a radial temperature adjusting ring according to claim 1 , wherein the sealing cavity is provided with an air inlet. 8 . 8.根据权利要求1所述的带径向调温环的碳化硅单晶生长装置,其特征在于,所述均温环采用石墨材料或碳碳复合材料或高温陶瓷或二硼化钛或碳化钛材料制作。8 . The silicon carbide single crystal growth device with radial temperature adjusting ring according to claim 1 , wherein the temperature adjusting ring is made of graphite material or carbon-carbon composite material or high temperature ceramics or titanium diboride or carbonized carbide. 9 . Made of titanium material.
CN202210390888.9A 2022-04-14 2022-04-14 Silicon carbide single crystal growth device with radial temperature adjusting ring Pending CN114959900A (en)

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