CN114959900A - Silicon carbide single crystal growth device with radial temperature adjusting ring - Google Patents

Silicon carbide single crystal growth device with radial temperature adjusting ring Download PDF

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Publication number
CN114959900A
CN114959900A CN202210390888.9A CN202210390888A CN114959900A CN 114959900 A CN114959900 A CN 114959900A CN 202210390888 A CN202210390888 A CN 202210390888A CN 114959900 A CN114959900 A CN 114959900A
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Prior art keywords
insulation structure
heat insulation
silicon carbide
temperature
carbide single
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CN202210390888.9A
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Chinese (zh)
Inventor
刘鹏
徐文立
潘建栋
袁晓芸
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Ningbo Hiper Vacuum Technology Co Ltd
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Ningbo Hiper Vacuum Technology Co Ltd
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Priority to CN202210390888.9A priority Critical patent/CN114959900A/en
Publication of CN114959900A publication Critical patent/CN114959900A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a silicon carbide single crystal growth device with a radial temperature adjusting ring, and relates to the technical field of preparation and crystal growth of silicon carbide single crystals. The silicon carbide single crystal growth device with the radial temperature regulating ring comprises a sealing cavity, a heat preservation structure, a heating structure, a crucible, a temperature equalizing ring and the like; the crucible is used for placing source materials, and the seed crystal is arranged at the top of the crucible. The multiple groups of heating mechanisms and the heat preservation structure are used for adjusting the radial temperature gradient at the seed crystal. The silicon carbide single crystal growth device with the radial temperature adjusting ring can dynamically adjust the radial temperature gradient at the seed crystal in real time, has simple adjusting method and high effect speed, can effectively control the concave-convex degree of the growth surface of the silicon carbide single crystal ingot, and is beneficial to the growth of large-size silicon carbide single crystal ingot.

Description

Silicon carbide single crystal growth device with radial temperature adjusting ring
Technical Field
The invention relates to the technical field of preparation and crystal growth of silicon carbide single crystals, in particular to a silicon carbide single crystal growth device with a radial temperature adjusting ring.
Background
The silicon carbide is a high-quality wide-band-gap semiconductor material, has the advantages of wide forbidden band, high breakdown electric field, high thermal conductivity, high saturated electron drift rate and the like, and can be used for preparing a semiconductor material with high saturation electron drift velocityThe requirements of high-temperature, high-power, low-loss and large-diameter devices are met. Silicon carbide single crystals cannot be formed by a melting method, and a physical vapor transport method (PVT method), which is a sublimation growth technology based on a modified Lely method, is a common method for obtaining silicon carbide single crystals. The growth principle of the silicon carbide single crystal prepared by the PVT method is as follows: the high-purity silicon carbide powder source is decomposed at high temperature to form gaseous substances (mainly Si and SiC) 2 、Si 2 C, etc.) which are driven by supersaturation and sublimated to the seed crystal at the cold end for growth. The degree of supersaturation is caused by the temperature gradient between the seed crystal and the powder source.
At present, in the commonly used induction heating method, in the crystal growth process, the temperature is controlled by adjusting the power of an induction coil and the axial relative position of the induction coil and a crucible, so that a proper temperature gradient is generated at a carborundum powder source and a seed crystal in the crucible, the crystal can continuously grow, the flexibility of temperature regulation of the induction heating method is very limited, when the induction coil moves axially, the axial temperature can be adjusted, but the radial temperature gradient can be changed along with the axial temperature gradient, and the radial temperature gradient of the seed crystal cannot be controlled independently. However, the resistance heating crystal growth furnaces on the market at present have low coupling degree between radial temperature and axial temperature, but the radial temperature cannot realize dynamic area adjustment.
In view of the above, it is important to develop a silicon carbide single crystal growth apparatus capable of radially adjusting a temperature gradient to solve the above-mentioned problems.
Disclosure of Invention
In order to solve the technical problems, the invention provides the silicon carbide single crystal growth device with the radial temperature regulating ring, which can dynamically regulate the radial temperature of the seed crystal in real time, has simple regulation and quick dynamic response, thereby reducing the radial temperature gradient of the crystal in the growth process of the silicon carbide single crystal, effectively reducing the defect of crystal growth and ensuring the quality of the crystal.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a silicon carbide single crystal growth device with a radial temperature regulating ring, which comprises a sealing cavity, a heating structure, a heat preservation structure and a temperature measuring mechanism, wherein the heating structure is arranged on the sealing cavity; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealed cavity; the crucible is arranged in the heat insulation structure, and the seed crystal is arranged in the crucible; and a temperature equalizing ring is arranged between the heating structure and the crucible.
Optionally, the sealed cavity includes a cavity, a cavity upper flange and a cavity lower flange, the cavity upper flange is openably disposed at the top of the cavity, and the cavity lower flange is disposed at the bottom of the cavity; and a cavity pumping hole is formed in the cavity.
Optionally, the heating structure includes an upper auxiliary heating resistor, a lower main heating resistor and a radial temperature adjusting resistor; the upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjusting resistor operate independently; the upper auxiliary heating resistor is arranged at the inner upper part of the heat insulation structure; the lower main heating resistor is arranged at the middle lower part in the heat insulation structure; the upper end surface of the radial temperature adjusting resistor is flush with the upper surface of the seed crystal, and the upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjusting resistor are respectively provided with a group of extraction electrodes.
Optionally, the heat insulation structure comprises an external heat insulation structure and an internal heat insulation structure, the external heat insulation structure comprises an external heat insulation structure upper cover, an external heat insulation structure cylinder and an external heat insulation structure lower cover, and the internal heat insulation structure is divided into a first internal heat insulation structure, a second internal heat insulation structure, a third internal heat insulation structure and a fourth internal heat insulation structure; the crucible comprises a crucible body, an external heat insulation structure, an upper cover, a lower cover, a first internal heat insulation structure, a second internal heat insulation structure, a third internal heat insulation structure and a fourth internal heat insulation structure, wherein the external heat insulation structure is arranged at the top of the external heat insulation structure, the external heat insulation structure is arranged at the bottom of the external heat insulation structure, the first internal heat insulation structure and the second internal heat insulation structure are arranged on the upper portion of the crucible body, the third internal heat insulation structure is arranged on the side face of the crucible body, and the fourth internal heat insulation structure is arranged on the lower portion of the crucible body.
Optionally, the temperature measuring mechanism includes an upper temperature measuring device, a lower temperature measuring device and a side temperature measuring device, and the upper temperature measuring device, the lower temperature measuring device and the side temperature measuring device are respectively disposed at the top, the bottom and the side of the sealed cavity.
Optionally, the upper temperature measuring device, the side temperature measuring device and the lower temperature measuring device are all infrared thermometers or thermocouples.
Optionally, an inflation port is arranged on the sealing cavity.
Optionally, the temperature equalizing ring is made of a graphite material, a carbon-carbon composite material, high-temperature ceramic, titanium diboride or titanium carbide material.
Compared with the prior art, the invention achieves the following technical effects:
the silicon carbide single crystal growth device with the radial temperature adjusting ring mainly structurally comprises a sealing cavity, a heating structure, a heat preservation structure and a temperature measuring mechanism; heating structure can realize the bottom to the crucible, the heating all around and top, go up the steerable crucible top temperature of vice heating resistor, the steerable crucible bottom temperature of lower main heating resistor, the radial temperature of the steerable seed crystal of radial thermoregulation resistance, it adopts graphite material or carbon-carbon composite material or high-temperature ceramic or titanium diboride or the temperature equalizing ring of titanium carbide material preparation to set up the one deck between heating structure and crucible, can effectively guarantee the homogeneity of temperature variation, combine temperature measurement mechanism to the crucible top, temperature measurement is carried out respectively to crucible top side and crucible bottom, it is adjustable to realize the real-time developments of the radial temperature of seed crystal department, thereby reduce radial temperature gradient and the stress of silicon carbide single crystal growth in-process crystal, can effectively reduce the defect of crystal growth, guarantee the quality of crystal.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view showing the structure of a silicon carbide single crystal growth apparatus having a radial temperature control ring according to the present invention.
FIG. 2 is a schematic view of the thermal insulation structure of the silicon carbide single crystal growth apparatus with a radial temperature regulating ring according to the present invention.
FIG. 3 is a schematic view showing the heating structure of the silicon carbide single crystal growth apparatus with a radial temperature control ring according to the present invention.
Description of reference numerals: 1. installing temperature measuring equipment; 2. an upper inflation inlet; 3. a cavity upper flange; 4. a cavity air exhaust port; 5. a cavity; 6. a cavity lower flange; 7. a lower inflation inlet; 8. lower temperature measuring equipment; 9. leading out an electrode; 10. a heat preservation structure; 101. an external heat insulation structure upper cover; 102. an external insulation structure cylinder; 103. an external heat insulation structure lower cover; 104. a first internal insulation structure; 105. a second internal insulation structure; 106. a third internal insulation structure; 107. a fourth internal insulation structure; 11. a heating structure; 111. an upper auxiliary heating resistor; 112. a radial temperature adjusting resistor; 113. a lower main heating resistor; 12. a crucible; 13. a temperature equalizing ring; 14. side temperature measuring equipment; 15. and (5) seed crystal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
as shown in fig. 1, the present embodiment provides a silicon carbide single crystal growth apparatus with a radial temperature adjustment ring, which includes a sealed cavity, a heating structure, a thermal insulation structure, and a temperature measurement mechanism; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealed cavity; the crucible 12 is arranged in the heat insulation structure, and the seed crystal 15 is arranged in the crucible 12; a temperature equalizing ring 13 is arranged between the heating structure and the crucible 12.
In this embodiment, the sealed cavity includes a cavity 5, a cavity upper flange 3 and a cavity lower flange 6, the cavity upper flange 3 is openably disposed on the top of the cavity 5, and the cavity lower flange 6 is disposed on the bottom of the cavity 5; and a cavity body air suction opening 4 is formed in the cavity body 5. The cavity upper flange 3, the cavity lower flange 6 and the cavity 5 can be connected through bolts, the cavity lower flange 6 can also be connected with the cavity 5 in a welding mode, the connection strength of the cavity upper flange 3, the cavity lower flange 6 and the cavity 5 can be guaranteed, and the sealing performance of the connection position can be guaranteed. The cavity body pumping hole 4 is used for vacuumizing the inside of the sealed cavity, so that the crystal growth reaches a necessary pressure environment.
The heating structure 11 comprises an upper auxiliary heating resistor 111, a lower main heating resistor 113 and a radial temperature adjusting resistor 112; the upper auxiliary heating resistor 111, the lower main heating resistor 113 and the radial temperature-adjusting resistor 112 operate independently; the upper auxiliary heating resistor 111 is arranged at the inner upper part of the heat insulation structure; the lower main heating resistor 113 is arranged at the middle lower part in the heat insulation structure; the upper end surface of the radial temperature-adjusting resistor 112 is flush with the upper surface of the seed crystal 15 (the relative position of the radial temperature-adjusting resistor 112 and the seed crystal 15 is adjusted according to the process requirement); the temperature gradient of the seed crystal in the radial direction can be independently controlled by adjusting the power of the radial temperature adjusting resistor 112; the three groups of resistors are respectively provided with a group of extraction electrodes which are respectively an upper extraction electrode, a lower extraction electrode and a middle extraction electrode corresponding to the upper auxiliary heating resistor 111, the lower main heating resistor 113 and the radial temperature-adjusting resistor 112; the arrangement mode of the middle extraction electrode preferably considers that the middle extraction electrode penetrates through a lower flange of the cavity and is in sealing connection with the lower flange in a mode of combining the flange with an O-shaped ring. Because the temperature of the part of the radial temperature-adjusting resistor 112, which is positioned in the sealed cavity, exceeds 2000 ℃, the part of the middle extraction electrode, which is positioned outside the sealed cavity, is close to the indoor temperature (about 20 ℃), and the temperature difference between the two is large, the longer middle extraction electrode can lead the temperature change of the middle extraction electrode to have a slower transition process, and the energy consumption is reduced. Optionally, the arrangement mode of the middle extraction electrode is radial extraction, penetrates through the cavity and is extracted from the side surface of the cavity.
The heat insulation structure 10 comprises an external heat insulation structure and an internal heat insulation structure, the external heat insulation structure comprises an external heat insulation structure upper cover 101, an external heat insulation structure cylinder 102 and an external heat insulation structure lower cover 103, and the internal heat insulation structure is divided into a first internal heat insulation structure 104, a second internal heat insulation structure 105, a third internal heat insulation structure 106 and a fourth internal heat insulation structure 107; the external heat insulation structure upper cover 101 is arranged at the top of the external heat insulation structure cylinder 102, the external heat insulation structure lower cover 103 is arranged at the bottom of the external heat insulation structure cylinder 102, the first internal heat insulation structure 104 and the second internal heat insulation structure 105 are arranged on the upper portion of the crucible 12, the third internal heat insulation structure 106 is arranged on the lateral surface of the crucible 12, and the fourth internal heat insulation structure 107 is arranged on the lower portion of the crucible 12.
The thermal insulation structure 10 provides a proper temperature environment for the whole crucible 12, and reduces heat loss of the whole growth environment.
The temperature measuring mechanism comprises an upper temperature measuring device 1, a side temperature measuring device 14 and a lower temperature measuring device 8, the upper temperature measuring device 1 and the lower temperature measuring device 8 are respectively arranged at the top and the bottom of the sealed cavity, and the side temperature measuring device 14 is located in the plane direction of the top of the crucible 12. Specifically, the middle parts of the upper cavity flange 3 and the lower cavity flange 6 are respectively provided with a temperature measuring pipeline, the upper temperature measuring equipment 1 and the lower temperature measuring equipment 8 are respectively arranged on the temperature measuring pipelines on the upper cavity flange 3 and the lower cavity flange 6, and the side temperature measuring equipment 14 is used for measuring the temperature of the side surface of the top of the crucible 12.
An upper inflation inlet 2 is arranged on one side of the temperature measuring pipeline on the cavity upper flange 3, and a lower inflation inlet 7 is arranged on one side of the temperature measuring pipeline on the cavity lower flange 6. The upper inflation inlet 2 and the lower inflation inlet 7 are used for inputting process gas; more, can be with process gas as sweep gas and sweep the temperature measurement pipeline, avoid impurity to be infected with on temperature measurement pipeline or temperature measurement glass, influence the temperature measurement accuracy.
The temperature equalizing ring 13 is located between the heating structure and the crucible, is made of graphite materials or carbon-carbon composite materials or high-temperature ceramics or titanium diboride or titanium carbide materials, needs to ensure the strength of the whole temperature equalizing ring in thickness, and can be 5-10 mm in thickness. Because the heating structure is generally in a grid shape or a column shape, gaps exist among grids or columns, the crucible is not uniformly heated, local temperature mutation can be caused, the temperature change gradient is not uniform enough, high-quality growth of crystals is not facilitated, and a layer of temperature equalizing ring 13 is added, so that more uniform change of axial temperature is facilitated.
The upper temperature measuring device 1, the side temperature measuring device 14 and the lower temperature measuring device 8 are all infrared thermometers or thermocouples.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.

Claims (8)

1. A silicon carbide single crystal growth device with a radial temperature adjusting ring is characterized by comprising a sealing cavity, a heating structure, a heat preservation structure and a temperature measuring mechanism; the heat insulation structure is arranged in the sealing cavity; the heating structure is arranged in the heat insulation structure, and the temperature measuring mechanism is arranged on the sealed cavity; the crucible is arranged in the heat insulation structure, and the seed crystal is arranged in the crucible; and a temperature equalizing ring is arranged between the heating structure and the crucible.
2. The silicon carbide single crystal growth apparatus with the radial temperature regulation ring according to claim 1, wherein the sealed chamber comprises a chamber body, an upper chamber body flange and a lower chamber body flange, the upper chamber body flange is openably disposed at the top of the chamber body, and the lower chamber body flange is disposed at the bottom of the chamber body; and a cavity pumping hole is formed in the cavity.
3. A silicon carbide single crystal growth apparatus with a radial temperature regulation ring as claimed in claim 1 wherein the heating structure comprises an upper secondary heating resistor, a lower primary heating resistor and a radial temperature regulation resistor; the upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjusting resistor operate independently; the upper auxiliary heating resistor is arranged at the inner upper part of the heat insulation structure; the lower main heating resistor is arranged at the middle lower part in the heat insulation structure; the upper end surface of the radial temperature adjusting resistor is flush with the upper surface of the seed crystal, and the upper auxiliary heating resistor, the lower main heating resistor and the radial temperature adjusting resistor are respectively provided with a group of extraction electrodes.
4. The silicon carbide single crystal growth apparatus with the radial temperature regulation ring according to claim 1, wherein the thermal insulation structure comprises an external thermal insulation structure and an internal thermal insulation structure, the external thermal insulation structure comprises an external thermal insulation structure upper cover, an external thermal insulation structure cylinder and an external thermal insulation structure lower cover, and the internal thermal insulation structure is divided into a first internal thermal insulation structure, a second internal thermal insulation structure, a third internal thermal insulation structure and a fourth internal thermal insulation structure; the crucible comprises a crucible body, an external heat insulation structure, an upper cover, a lower cover, a first internal heat insulation structure, a second internal heat insulation structure, a third internal heat insulation structure and a fourth internal heat insulation structure, wherein the external heat insulation structure is arranged at the top of the external heat insulation structure, the external heat insulation structure is arranged at the bottom of the external heat insulation structure, the first internal heat insulation structure and the second internal heat insulation structure are arranged on the upper portion of the crucible body, the third internal heat insulation structure is arranged on the side face of the crucible body, and the fourth internal heat insulation structure is arranged on the lower portion of the crucible body.
5. The apparatus for growing a silicon carbide single crystal according to claim 1, wherein the temperature measuring mechanism comprises an upper temperature measuring device, a lower temperature measuring device and a side temperature measuring device, and the upper temperature measuring device, the lower temperature measuring device and the side temperature measuring device are respectively disposed at the top, the bottom and the side of the sealed chamber.
6. A silicon carbide single crystal growth apparatus with a radial temperature regulation ring according to claim 5, wherein the upper temperature measurement device, the side temperature measurement device and the lower temperature measurement device are all infrared thermometers or thermocouples.
7. A silicon carbide single crystal growth apparatus with a radial temperature regulation ring according to claim 1, wherein a gas filling port is provided in the sealed chamber.
8. The apparatus for growing SiC single crystals as claimed in claim 1, wherein the temperature-equalizing ring is made of graphite material, carbon-carbon composite material, high-temperature ceramic, titanium diboride or titanium carbide.
CN202210390888.9A 2022-04-14 2022-04-14 Silicon carbide single crystal growth device with radial temperature adjusting ring Pending CN114959900A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115558987A (en) * 2022-11-16 2023-01-03 浙江晶越半导体有限公司 Crucible device for growing crystal by sublimation method
WO2024055502A1 (en) * 2022-09-14 2024-03-21 青禾晶元(天津)半导体材料有限公司 Growth device and growth method for large-size silicon carbide crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024055502A1 (en) * 2022-09-14 2024-03-21 青禾晶元(天津)半导体材料有限公司 Growth device and growth method for large-size silicon carbide crystal
CN115558987A (en) * 2022-11-16 2023-01-03 浙江晶越半导体有限公司 Crucible device for growing crystal by sublimation method
CN115558987B (en) * 2022-11-16 2023-09-15 浙江晶越半导体有限公司 Crucible device for growing crystals by sublimation method

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