CN109913947A - Diamond synthesizing substrate and diamond synthesis system with coat - Google Patents
Diamond synthesizing substrate and diamond synthesis system with coat Download PDFInfo
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- CN109913947A CN109913947A CN201910095772.0A CN201910095772A CN109913947A CN 109913947 A CN109913947 A CN 109913947A CN 201910095772 A CN201910095772 A CN 201910095772A CN 109913947 A CN109913947 A CN 109913947A
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- diamond
- coat
- roughness
- substrate
- sample mounting
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Abstract
The present invention provides diamond synthesizing substrates and diamond synthesis system with coat, for placing the seed crystal of diamond synthesizing, contain at least one sample mounting surface, there is multiple seed crystals mounting groove on sample mounting surface, the roughness of sample mounting surface is greater than the roughness of seed crystal installation groove bottom.For in diamond batch production process in the prior art, diamond is fixed and the problem of polycrystalline growth, in the uniform plating thin film of substrate surface, it is roughened coating surface, to achieve the purpose that fixed diamond seed crystal, batch are fixed and inhibit polycrystalline growth.Also provide a kind of diamond synthesis system, comprising: microwave source；Microwave coupling system；Reaction chamber with gas handling system, outlet system；The vacuum system being connect with reaction chamber；Substrate in reaction chamber, substrate contain at least one sample mounting surface, there is multiple seed crystals mounting groove on sample mounting surface, and the roughness of sample mounting surface is greater than the roughness of seed crystal installation groove bottom.
Description
Technical field
The present invention relates to diamond synthesizing device fields, more particularly relate to a kind of diamond synthesizing use with coat
Substrate and diamond synthesis system.
Background technique
Diamond causes everybody concern due to having extremely excellent physicochemical properties.But natural diamond stores up
Measure limited, then people develop a variety of diamond synthesis methods, such as high temperature and high pressure method (HPHT), hot filament CVD
(HJCVD).Wherein MPCVD method MPCVD (Microwave plasma chemical vapor
Deposition) diamond synthesis method can synthesize high quality, the diamond of large area forms due to the introducing of not no impurity
For proper method.
The quality of MPCVD method diamond synthesis is related with many factors, including carbon source concentration, gas flow size, temperature,
Substrate table height, microwave power, synthesis temperature etc. have a significant impact for diamond synthesis quality tool.However gold is synthesized in batch
During hard rock, seed crystal position can move in temperature-rise period, this greatly hinders the measurement of seed temperature and mesh
The setting of parameter is marked, and then affects the quality of final sintetics.
Fixation for diamond, there are many solutions in the prior art.For example, leading between substrate and single-crystal diamond
Welding is crossed, diamond is fixed on substrate surface or the specific molybdenum support of design to be fixed, but this method is complicated, substrate is not
It is reusable.
For example, specially devising seed crystal support made of two kinds of metal Mo, as shown in Figure 4 in the work of Mokuno etc..This
The design of sample is to realize high-speed rapid growth, but not ensure that different seed crystal tools to generate more highdensity plasma
There is same temperature, the industrialization combined growth of more diamonds can not be realized, more without solving single crystal diamond film mistake
Polycrystalline growth problem in journey.
And in the work in Mao Heguang etc., as shown in figure 5, using seed crystal support complicated made of metal Mo.At this
In one design, diamond seed is fixed in Mo support by fixture and jacket etc. by the way of mechanical, to grow
Cheng Zhong makes diamond seed keep uniform temperature, however the structure is more complicated, is appropriate for laboratory research, Bu Nengying
Used in large batch of industrial production.
Obviously, current existing scheme only can solve the fixation problem of single diamond seed, for industrialization, batch
The fixation during diamond product is produced, above method is not applicable.
Summary of the invention
The present invention for the problem that in diamond batch production process in the prior art, diamond is fixed and polycrystalline growth,
It is proposed that there is a kind of more diamond syntrophism solutions the diamond synthesizing substrate of coat and diamond to close
It is roughened coating surface in the uniform plating thin film of substrate surface at system, to reach fixed diamond seed crystal, criticize
Amount is fixed and inhibits the purpose of polycrystalline growth.
The present invention provides a kind of diamond synthesizing substrate with coat, for placing the seed of diamond synthesizing
It is brilliant, it is characterised in that:
Sample mounting surface is contained at least one, there is multiple seed crystals mounting groove, sample mounting surface on sample mounting surface
Roughness be greater than seed crystal installation groove bottom roughness.
Further, the roughness of sample mounting surface is the 2 times or more of bottom surface；
Further, the roughness of sample mounting surface is greater than Ra 25.
Further, the roughness of sample mounting surface is greater than Ra 100.
Further, seed crystal installation slot number is greater than 10, is further greater than 20.
Further, the neighbor distance between the seed crystal is less than 5mm, further, is less than 3mm.
A kind of preferred scheme of the invention provides a kind of diamond synthesizing substrate with coat, for placing
The seed crystal of diamond synthesizing, it is characterised in that:
Substrate includes substrate base, and substrate base includes at least first surface；
First surface is partially covered with coat；
Coat surface roughness is greater than the roughness for not being coated the first surface of layer covering.
Further, coat defines multiple seed crystals mounting groove with the sample mounting surface for not being coated layer covering.Institute
State the roughness that coat surface roughness is not coated the first surface of layer covering greater than seed crystal installation trench bottom.
In this preferred embodiment, the surface of coat is above-mentioned sample mounting surface, uncovered first surface
As above-mentioned sample installs trench bottom.
After increasing coating, so that foreign substrate surface roughening, polycrystalline are not easy forming core on foreign substrate surface, effectively inhibit
The growth rate of polycrystalline film.Further, can effectively inhibit the warpage of substrate heteroepitaxial diamond, guarantee for a long time etc. from
The stability of daughter fireball dramatically increases the time of synthetic single crystal diamond.
Further, coat be can at least bear 900 DEG C of high temperature without departing from contact surface the material of warpage.
It is further preferred that coat be can at least bear 1100 DEG C of high temperature without departing from contact surface the material of warpage
Matter.
Further, the material of coat is Mo, W or its alloy.
Further, the preparation method of coat can be magnetron sputtering method, other coating methods such as galvanoplastic.Main mesh
It is uniformly to coat thin film on the surface of contact surface, while not influencing thermally conductive, increases ladder-like fixed seed crystal, finally
Realize the controllable purpose in position.
Further, the preparation method of coat can take the direct mask film covering plate of substrate surface, be placed in plated film and set
In standby, the processing method that mask plate obtains seed crystal mounting groove is then taken down.The mode that micro-nano technology can also be used for reference, is taken with this
Photoresist is coated, exposure sources are exposed development and obtain pattern, and filming equipment is deposited, and unreacted photoetching is peeled off
Glue obtains target pattern.
Further, coat thickness selection can be selected according to the thickness of diamond seed, the height and plating of seed crystal
Layer difference ± 0.1mm is advisable.
Further, the shape of coating can be square, rectangle, circle etc..Specifically it is subject to diamond seed.
Further, the arrangement of seed crystal mounting groove is with most close arrangement mode, to reach the lower purpose of synthesis cost.It can also be with
It is modified according to the actual situation, such as arc-shaped arrangement.
The present invention also provides a kind of diamond synthesis systems characterized by comprising
Microwave source；
Microwave coupling system；
Reaction chamber with gas handling system, outlet system；
The vacuum system being connect with reaction chamber；
Substrate in reaction chamber,
Substrate contains at least one sample mounting surface, there is multiple seed crystals mounting groove, sample installation on sample mounting surface
The roughness on surface is greater than the roughness of seed crystal installation groove bottom.
Further, the roughness of sample mounting surface is the 2 times or more of bottom surface；
Further, the roughness of sample mounting surface is greater than Ra 25.
Further, the roughness of sample mounting surface is greater than Ra 100.
In general microwave coupling system includes the components such as waveguide, three pins, mode converter, short-circuit plunger.Further
It can also include circulator and water load, for protecting microwave generating apparatus, absorption microwave reflection.
Further, a kind of preferred substrate of the invention is a kind of diamond synthesizing substrate with coat, uses
In the seed crystal for placing diamond synthesizing, it is characterised in that:
Substrate includes substrate base, and substrate base includes at least first surface；
First surface is partially covered with coat；
Coat surface roughness is greater than the roughness for not being coated the first surface of layer covering.
Further, coat defines multiple seed crystals mounting groove with the sample mounting surface for not being coated layer covering.Institute
State the roughness that coat surface roughness is not coated the first surface of layer covering greater than seed crystal installation trench bottom.
In this preferred embodiment, the surface of coat is above-mentioned sample mounting surface, uncovered first surface
As above-mentioned sample installs trench bottom.
Further, coat be can at least bear 900 DEG C of high temperature without departing from contact surface the material of warpage.
It is further preferred that coat be can at least bear 1100 DEG C of high temperature without departing from contact surface the material of warpage
Matter.
Further, the material of coat is Mo, W or its alloy.
Further, the preparation method of coat can be magnetron sputtering method, other coating methods such as galvanoplastic.Main mesh
It is uniformly to coat thin film on the surface of contact surface, while not influencing thermally conductive, increases ladder-like fixed seed crystal, finally
Realize the controllable purpose in position.
Further, the preparation method of coat can take the direct mask film covering plate of substrate surface, be placed in plated film and set
In standby, the processing method that mask plate obtains seed crystal mounting groove is then taken down.The mode that micro-nano technology can also be used for reference, is taken with this
Photoresist is coated, exposure sources are exposed development and obtain pattern, and filming equipment is deposited, and unreacted photoetching is peeled off
Glue obtains target pattern.
Further, coat thickness selection can be selected according to the thickness of diamond seed, the height and plating of seed crystal
Layer difference ± 0.2mm is advisable.
Further, the shape of coating can be square, rectangle, circle etc..Specifically it is subject to diamond seed.
Further, the arrangement of seed crystal mounting groove is with most close arrangement mode, to reach the lower purpose of synthesis cost.It can also be with
It is modified according to the actual situation, such as arc-shaped arrangement.
The effect and effect of invention
The present invention have it is following the utility model has the advantages that
(1) the fixed position of more diamonds.The program fixes the position of diamond, has obvious action.In gold
On the basis of the fixed position of hard rock seed crystal, the confined space can be maximumlly utilized, ordered arrangement seed crystal synthesizes more as far as possible
Diamond, reduces cost.
(2) more diamond temperature uniformities are adjusted.After position is fixed, for more diamonds for the gold of temperature anomaly
Hard rock can be effectively adjusted, such as replacement position, contacted surface treatment, changed the modes such as technological parameter.Avoid diamond
Drift, lead to individual diamond temperature anomalies but can not re-adjustments the case where, reach save time cost and improve it is good
The purpose of rate.
(3) more diamond syntrophisms.The program is maximumlly utilizing space, improves seed crystal arrangement density, fixed
Behind diamond position, by the adjusting of the technological parameters such as power, air pressure, more diamond syntrophisms are realized, realize that batch is steady
It is qualitative, Yield lmproved.
(4) repeatable.During more diamond synthesizings, position can not be fixed after drifting about, steady for batch
It is qualitative that there is strong influence.After the program realizes that position is fixed, the stability of temperature is adjusted, product can be obviously improved
Quality realizes lot stability.
(5) increase substrate access times, reduce cost.Substrate is not during adding any processing diamond synthesis, table
Easily there are the impurity such as polycrystalline diamond, diamond-like and graphite in face, and is not easy to be handled.It, can be with after overlay coating
Increase the protective effect of substrate surface, the impurity of growth is more easy to handle, convenient for repeatedly using, reduces cost.
(6) substrate polycrystalline growth rate is reduced, the single-crystal diamond generated time of single batch is increased.It is well known that closing
During at single-crystal diamond, other than single-crystal diamond isoepitaxial growth single-crystal diamond, substrate surface still can be heterogeneous
Epitaxial growth polycrystalline diamond films, with the increase of growth time, polycrystalline diamond films thickness is gradually increased, due to polycrystalline
Internal stresses release causes surface polycrystalline warpage occur, and then influences the distribution of plasma ball, so that single-crystal diamond can not
Further grown.By this programme, it can effectively inhibit the warpage of substrate heteroepitaxial diamond, guarantee for a long time etc.
The stability of gas ions fireball dramatically increases the time of synthetic single crystal diamond.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the diamond synthesizing substrate in the embodiment of the present invention with coat；
Fig. 2 is a kind of diamond synthesis system comprising substrate of the invention；
Fig. 3 is a kind of overlooking structure diagram of diamond synthesizing substrate with coat of the invention；
Fig. 4 is the structural schematic diagram of seed crystal support employed in the research work of Mokuno etc.；And
Fig. 5 is the structural schematic diagram of seed crystal support employed in the research work of Mao Heguang etc..
It illustrates:
1- substrate base；2- coat；3- is not coated the first surface of layer covering；4- coats layer surface；5- seed crystal；6-
Microwave source；7- microwave coupling system；8- reaction chamber
Specific embodiment
It is real below in order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention
Applying example combination attached drawing there is the diamond synthesizing of coat to be specifically addressed with substrate and diamond synthesis system the present invention.
Embodiment 1
Fig. 1 is the structural schematic diagram of the diamond synthesizing substrate in the embodiment of the present invention with coat.
As shown in Figure 1, the diamond synthesizing substrate with coat includes substrate base 1, coat 2；It is not coated
The first surface 3 of layer covering, coating layer surface 4.
Substrate matrix 1 is located in reaction chamber 8, and substrate base upper surface is sample mounting surface.2 covering part of coat
Sample mounting surface.
Since the working environment of substrate is up to 900 DEG C of high temperature, thus coat be can at least bear 900 DEG C of high temperature without
The material that face and warpage can be disengaged, the material for being preferably coated with layer is W alloy.The requirement of working environment is considered simultaneously,
Other metals such as Mo be can choose as coat.
Coat, using the method for magnetron sputtering, W is coated in using inorganic non-metallic mask to be placed on substrate matrix
It is not masked the substrate base upper surface of cover.The coating layer surface 4 of the W coating of formation is coarse surface.Its roughness is extremely
It is greater than less and is not coated the first surface 3 that layer 2 covers.
The thickness of coat can be selected according to the thickness of diamond seed, the height and coating difference ± 0.1mm of seed crystal
It is advisable.
Mask is removed, seed crystal mounting groove is formed.Seed crystal mounting groove is for placing seed crystal, and the shape of seed crystal mounting groove is according to covering
Depending on the shape of mould.Preferably that the shape of seed crystal fixing groove is similar with seed crystal in order to make seed crystal fixation more firm, size is omited
Greater than seed crystal size.
The arrangement mode of seed crystal fixing groove can be to arrange in length and breadth, and when substrate is round, seed crystal can enclose on substrate
Around the symmetrical arc shooting in the center of circle.Since coating layer surface has carried out roughening treatment, it is suppressed that the diamond on substrate is formed, from
And can be even closer when seed crystal is arranged, improve production efficiency.
Embodiment 2
The present embodiment provides a kind of diamond synthesis system comprising above-mentioned substrate, which includes microwave source 6, microwave coupling
Collaboration system 7, the microwave that the microwave coupling system generates microwave source 6 imports in reaction chamber 8.In general microwave coupling system
System includes the components such as waveguide, three pins, mode converter, short-circuit plunger.It can also include further circulator and water load, use
In protection microwave generating apparatus, microwave reflection is absorbed.Reaction cavity is connected with the reaction chamber of gas handling system, outlet system.Air inlet
System imports reaction gas in reaction cavity.After microwave is imported reaction chamber by microwave coupling system, microwave is in reaction chamber
Dissociation reaction gas is excited in body, forms plasma, and deposition forms diamond on seed crystal.Outlet system arranges residual gas
Cavity out.Vacuum system keeps system in the synthesis process for cavity to be evacuated to goal pressure section before the reaction
Pressure.
Above embodiment is preferred case of the invention, the protection scope being not intended to limit the invention.It is described above
It is merely a preferred embodiment of the present invention, is not intended to restrict the invention, to those skilled in the art, the present invention can have
Various modifications and changes.All any modification, equivalent replacement, improvement and so within the spirit and principles of the present invention, should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of diamond synthesizing substrate with coat, for placing the seed crystal of diamond synthesizing, it is characterised in that:
Contain at least one sample mounting surface, there is multiple seed crystals mounting groove on sample mounting surface, sample mounting surface it is thick
Rugosity is greater than the roughness of seed crystal installation groove bottom.
2. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that:
Wherein, the roughness of the sample mounting surface is the 2 times or more of bottom surface.
3. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that:
Wherein, the roughness of the sample mounting surface is greater than Ra 25.
4. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that:
Wherein, the roughness of the sample mounting surface is greater than Ra 100.
5. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that:
The substrate includes substrate base, has first surface in substrate base,
Wherein, it is partially covered with coat in the first surface,
The coat surface roughness is greater than the roughness for not being coated the first surface of layer covering.
6. the diamond synthesizing substrate according to claim 5 with coat, it is characterised in that:
Wherein, the coat defines multiple seed crystals mounting groove with the first surface for not being coated layer covering.
7. the diamond synthesizing substrate according to claim 5 with coat, it is characterised in that:
Wherein, the coat be can at least bear 900 DEG C of high temperature without departing from contact surface the material of warpage.
8. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that: wherein, the painting
The material of coating is one of Mo, W or its alloy.
9. the diamond synthesizing substrate according to claim 1 with coat, it is characterised in that: wherein, the seed
Brilliant height and coating difference ± 0.1mm.
10. a kind of diamond synthesis system characterized by comprising
Microwave source；
Microwave coupling system；
Reaction chamber with gas handling system, outlet system；
The vacuum system being connect with reaction chamber；
Substrate described in any one of claim 1-9 in reaction chamber.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565164A (en) * | 2019-09-30 | 2019-12-13 | 长沙新材料产业研究院有限公司 | Method for preventing seed crystal from drifting in process of growing diamond by MPCVD and growing method |
| CN110714225A (en) * | 2019-10-31 | 2020-01-21 | 长沙新材料产业研究院有限公司 | Diamond growth tray and system |
| CN110983437A (en) * | 2019-12-26 | 2020-04-10 | 长沙新材料产业研究院有限公司 | Method for producing single crystal diamond |
| CN112064111A (en) * | 2020-08-18 | 2020-12-11 | 北京大学东莞光电研究院 | Preparation device and preparation method of large-diameter diamond sheet |
| CN114016130A (en) * | 2021-11-10 | 2022-02-08 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1840748A (en) * | 2005-03-28 | 2006-10-04 | 住友电气工业株式会社 | Diamond substrate and manufacturing method thereof |
| JP2007331955A (en) * | 2006-06-12 | 2007-12-27 | National Institute Of Advanced Industrial & Technology | Method for producing diamond |
| CN106012003A (en) * | 2016-06-07 | 2016-10-12 | 武汉工程大学 | Two-dimensional expansion method for CVD monocrystal diamond |
| CN106048719A (en) * | 2016-07-08 | 2016-10-26 | 武汉大学 | Substrate holder and method for growing monocrystalline diamond |
| CN206828679U (en) * | 2017-06-16 | 2018-01-02 | 北京科技大学 | MPCVD method grows the deposition table of single-crystal diamond |
| CN109355702A (en) * | 2018-12-19 | 2019-02-19 | 长沙新材料产业研究院有限公司 | A method of for reducing CVD diamond synthesis impurity content |
-
2019
- 2019-01-31 CN CN201910095772.0A patent/CN109913947A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1840748A (en) * | 2005-03-28 | 2006-10-04 | 住友电气工业株式会社 | Diamond substrate and manufacturing method thereof |
| JP2007331955A (en) * | 2006-06-12 | 2007-12-27 | National Institute Of Advanced Industrial & Technology | Method for producing diamond |
| CN106012003A (en) * | 2016-06-07 | 2016-10-12 | 武汉工程大学 | Two-dimensional expansion method for CVD monocrystal diamond |
| CN106048719A (en) * | 2016-07-08 | 2016-10-26 | 武汉大学 | Substrate holder and method for growing monocrystalline diamond |
| CN206828679U (en) * | 2017-06-16 | 2018-01-02 | 北京科技大学 | MPCVD method grows the deposition table of single-crystal diamond |
| CN109355702A (en) * | 2018-12-19 | 2019-02-19 | 长沙新材料产业研究院有限公司 | A method of for reducing CVD diamond synthesis impurity content |
Non-Patent Citations (3)
| Title |
|---|
| 张贵锋等: "衬底表面预处理对金刚石薄膜形核及长大的影响", 《材料科学进展》 * |
| 王丽军等: "金刚石薄膜衬底表面不同预处理对薄膜表面形貌的影响", 《微细加工技术》 * |
| 迈克尔·汤普森主编: "《化学与生命科学》", 31 October 2006 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565164A (en) * | 2019-09-30 | 2019-12-13 | 长沙新材料产业研究院有限公司 | Method for preventing seed crystal from drifting in process of growing diamond by MPCVD and growing method |
| CN110714225A (en) * | 2019-10-31 | 2020-01-21 | 长沙新材料产业研究院有限公司 | Diamond growth tray and system |
| CN110714225B (en) * | 2019-10-31 | 2021-10-01 | 长沙新材料产业研究院有限公司 | Diamond growth tray and system |
| CN110983437A (en) * | 2019-12-26 | 2020-04-10 | 长沙新材料产业研究院有限公司 | Method for producing single crystal diamond |
| CN110983437B (en) * | 2019-12-26 | 2021-06-22 | 长沙新材料产业研究院有限公司 | Method for producing single crystal diamond |
| CN112064111A (en) * | 2020-08-18 | 2020-12-11 | 北京大学东莞光电研究院 | Preparation device and preparation method of large-diameter diamond sheet |
| CN112064111B (en) * | 2020-08-18 | 2021-09-07 | 北京大学东莞光电研究院 | Preparation device and preparation method of large-diameter diamond sheet |
| CN114016130A (en) * | 2021-11-10 | 2022-02-08 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
| CN114016130B (en) * | 2021-11-10 | 2022-09-13 | 哈尔滨工业大学 | Method for welding single crystal diamond seed crystal and sample holder |
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Application publication date: 20190621 |