CN107068205B - UB2Application of the film on black chamber - Google Patents
UB2Application of the film on black chamber Download PDFInfo
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- CN107068205B CN107068205B CN201710272260.8A CN201710272260A CN107068205B CN 107068205 B CN107068205 B CN 107068205B CN 201710272260 A CN201710272260 A CN 201710272260A CN 107068205 B CN107068205 B CN 107068205B
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B1/00—Thermonuclear fusion reactors
- G21B1/11—Details
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
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- High Energy & Nuclear Physics (AREA)
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Abstract
UB2Application of the film on black chamber, it belongs to laser-produced fusion field of engineering technology, and in particular to it is a kind of have both black chamber subtract dissipate and protective action UB2The application of film.The invention aims to solve the problems, such as that it is difficult that existing uranium black cavity configuration is complicated, Au/B subtracts scattered layer poor chemical stability, component ratio and distribution regulation.UB2As subtracting, scattered/black chamber Au/B of protective layer substitution subtracts scattered layer to film and Au protective layer is applied on black chamber.Advantage: UB2Film is able to achieve accurately controlling, reduce black chamber releasing process difficulty for thin film composition for black chamber, effectively inhibits laser plasma stimulated Brillouin scattering；The film also has the function of reducing M with thermoelectron yield, raising laser-X-ray transfer efficiency, protection uranium black chamber conversion coating simultaneously.UB2Film, which integrates, subtracts scattered, safeguard function, is effectively simplified the black chamber of igniting and the black cavity configuration of other high-performance, high conversion and its preparation process.
Description
Technical field
The invention belongs to laser-produced fusion field of engineering technology, and in particular to it is a kind of have both black chamber and subtract dissipate and protective action
UB2The application of film.
Background technique
Driving laser inertial confinement fusion (ICF) can provide irradiation field more evenly and can effectively keep away because it has indirectly
The advantages that exempting from fuel preheating and become realize controlled thermonuclear fusion reaction focus on research direction.It was tested in driving ICF indirectly
Cheng Zhong, laser light incident to black chamber occur nonlinear interaction with intracavitary plasma, cause to include stimulated Brillouin scattering
(SBS) the non-linear parameter erratic process including increases, and has an adverse effect to fusion process.Black intracavitary large scale swashs
Light plasma interaction is considered as one of most uncertain two factors in igniting link.Black chamber is used as laser energy
It is converted into the critical component of X-ray, is directly related to the spatially uniform of laser-X-ray transfer efficiency and radiation field.
Black chamber cavity wall is typically selected to have the material of high atomic number (Z).The black chamber of Au is because of its higher atom for a long time
Ordinal number, excellent chemical stability and be used widely.Relative to traditional black chamber materials A u, U Atom of Elements
Greatly, M band thermoelectron yield is small, and M band transmitting is located at higher energy area, and theoretically its X-ray transfer efficiency is higher, together
When have smaller hard X ray accounting.Theory analysis and experimental study show compared with the black chamber of traditional Au, to have higher spoke
The metal U for penetrating opacity can reduce~17% energy loss as black chamber cavity wall material, while can effectively inhibit M band
Thermoelectron yield (O.Jones, J.Schein, M.Rosen, et al.Phys.Plasmas, 2007,14,056311).Due to U
Chemical property it is active, the black chamber of U is designed to this sandwich structure of Au-U-Au.In order to reduce the adverse effect of Au, Au protection
Layer is usually very thin, and thickness only has 100~700nm.In addition, research finds that incorporation B formation Au/B subtracts scattered in black intracavitary layer Au
Layer helps to increase ion acoustic wave Landau damping, to inhibit the growth of SBS in the plasma of cavity wall injection
(P.Neumayer,R.L.Berger,D.Callahan,et al.Phys.Plasmas,2008,15,056307).Currently, beautiful
The basic of the black chamber of high conversion is constituted substantially the igniting of country, state in the works are as follows: Au/B subtracts protective layer-U conversion coating-in scattered layer-Au
Au supporting layer.
The Au/B of the existing black chamber of U, which subtracts scattered layer, can be co-deposited or sputter Au/B mixture target by magnetron sputtering Au target and B target
It is prepared, Au:B component ratio is regulated and controled by control sputter rate or control mixture target component.But it can by phasor
Knowing does not have stable compound and solid solution to exist between two kinds of elements of Au, B, Au/B blend film made from magnetron sputtering is micro-
It sees and is difficult to and is uniformly distributed on scale, the problem of there is thin film compositions to be difficult to control accurately, component segregation.In addition, plating
It also needs to be placed in sample in corrosive media after Au/B blend film processed and carries out demoulding processing, the unstability of B simple substance is easily
The loss for leading to B element in knockout course further results in the uneven of thin film composition distribution, and proposes more to releasing process
Harsh requirement.Low Z element is adulterated to the inhibitory effect of SBS, there are much relations with doping ratio, Au/B subtracts the ingredient of scattered layer not
Uniformity, will lead to cavity wall injection plasma in B element be unevenly distributed and the variation of plasma parameter, wait from
The variation of daughter environment will directly affect inhibitory effect to SBS.
Summary of the invention
It is an object of the present invention to the existing uranium black cavity configuration complexity of solution, and Au/B subtracts scattered layer, and there are poor chemical stabilities, group
Divide the problem that ratio and distribution regulation are difficult, inhibit stimulated Brillouin scattering ability limited, and UB is provided2Film is on black chamber
Using.
UB2Application of the film on black chamber, UB2Film subtracts scattered layer and Au protection as scattered/black chamber Au/B of protective layer substitution is subtracted
Layer is applied on black chamber.
Present invention relates particularly to UB2Film is mainly reflected in black chamber using upper advantage: (1) UB2Because of its stringent change
Learn metering ratio, it can be achieved that U:B element ratio accurate control, and this compound film ensure that U, B are first on a molecular scale
The uniformity of element distribution, and the uniformity of the accurate control of ingredient and component is of crucial importance to the final effect for ensuring inhibition SBS.
(2)UB2With good chemical stability, acid-alkali-corrosive-resisting can carry out long time treatment in conventional mold release solution, simultaneously
Component fluctuation and component segregation caused by the loss of B element during demoulding effectively are avoided, effectively reduces black chamber stripper
Skill difficulty.(3) to improve laser-chamber target coupling efficiency, low Z materials are generally selected as black chamber, relative to the black chamber cavity wall of tradition
For materials A u, U Atom of Elements is bigger, and laser-X-ray transfer efficiency is higher, while it is with smaller hard X ray
Accounting can significantly reduce M band thermoelectron yield.(4) since chemical property is stablized, UB2Film is also simultaneous while inhibiting SBS
Tool prevents the effect of internal U conversion coating oxidation deactivation, plays the role of protective layer.(5) uranium black chamber is black chamber development of lighting a fire at present
Main trend, UB of the present invention2Film and uranium black chamber have be more good interface binding power and chemical compatibility.It can
See, UB2Film be applied to black chamber have reduce SBS share, inhibit M band thermoelectron yield, improve laser-X-ray transfer efficiency,
The effect for protecting uranium black chamber conversion coating, can be used for substituting uranium black chamber Au/B and subtracts scattered layer and Au protective layer.
Specific embodiment
Specific embodiment 1: present embodiment is a kind of UB2Application of the film on black chamber, UB2Film as subtract it is scattered/
Protective layer substitutes black chamber Au/B and subtracts scattered layer and Au protective layer applied on black chamber.
Compared with Au/B, UB2The B element of middle high level can effectively inhibit stimulated Brillouin scattering, while U element has
Inhibit effect of the M with thermoelectron yield well, most importantly UB2Chemical property stablize, therefore UB2Film has simultaneous
The effect for subtracting and dissipating and protecting is cared for, Au/B can be directly substituted and subtract scattered layer and Au protective layer.
Specific embodiment 2: the difference of present embodiment and specific embodiment one is: utilizing UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by Deposited By Dc Magnetron Sputtering method, with UB2Target carries out magnetron sputtering by DC power supply
Deposition, the UB2Target purity is greater than 99%.Other are same as the specific embodiment one.
Specific embodiment 3: the difference of present embodiment and specific embodiment two is: the direct magnetic control splashes
Penetrating deposition method, detailed process is as follows:
One, 1~10 mandrel is mounted on rotary support table, adjusts UB2Target and mandrel centre distance be 5cm~
20cm, UB2Plane where target surface centre normal and mandrel is in 45 ° of angles；
Two, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 1 × 10-8Pa~1 × 10-6Pa, so
After be filled with high-purity argon gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.1Pa~1Pa, the high-purity argon gas it is pure
Degree is 99.9999%；
Three, 3min~20min is etched to mandrel surface using low energy ion beam, in utilization low-power plasma beam to mandrel table
Rotary support table is during face etches with 1~30rpm rotation；
Four, UB2Baffle is equipped between target and mandrel, in UB2Target Dc source power is to carry out pre-sputtering under 50W~400W
10min~30min；
Five, UB is opened2Baffle between target and mandrel, in UB2Target Dc source power is to deposit 5min under 50W~400W
~480min, and in deposition process rotary support table is completed to utilize direct magnetic control in mandrel surface with 1rpm~30rpm rotation
Sputtering method deposits UB2Film.
Other are identical with embodiment two.
Specific embodiment 4: the difference of present embodiment and specific embodiment one is: utilizing UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by double target magnetic control sputtering co-deposition methods, passing through radio frequency by DC power supply, B target with U target
Power supply carries out sputtering sedimentation, and the U target purity is greater than 99%, and the B target purity is greater than 99%.Other and specific embodiment party
Formula one is identical.
Specific embodiment 5: the difference of present embodiment and specific embodiment four is: double target magnetic controls splash
Penetrating co-deposition method, detailed process is as follows:
One, U target and B target and the normal of plane where mandrel are symmetric, and flat where target surface centre normal and mandrel
Face be in 45 ° of angles, adjustment U target and mandrel centre distance be 5cm~20cm, adjustment B target and mandrel centre distance be 5cm~
20cm；
Two, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 1 × 10-8Pa~1 × 10-6Pa, so
After be filled with high-purity argon gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.1Pa~1Pa, the high-purity argon gas it is pure
Degree is 99.9999%；
Three, 3min~20min is etched to mandrel surface using low energy ion beam, in utilization low-power plasma beam to mandrel table
Rotary support table is during face etches with 1rpm~30rpm rotation；
Four, it is respectively equipped with baffle between U target, B target and mandrel, is 40W and B target radio-frequency power supply in U target Dc source power
Power is that pre-sputtering 10min~30min is carried out under 200W；
Five, the baffle between U target, B target and mandrel is opened, is 20~200W and B target radio frequency electrical in U target Dc source power
Source power be 100W~500W under deposit 5min~480min, and in deposition process rotary support table with 1rpm~30rpm from
Turn, that is, completes to deposit UB using double target magnetic control sputtering co-deposition methods in mandrel surface2Film.
Other are identical as specific embodiment four.
Specific embodiment 6: the difference of present embodiment and specific embodiment one is: utilizing UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by electron beam evaporation method, with UB2It is deposited for evaporation source, the UB2Evaporation source
Purity be greater than 99%.Other are same as the specific embodiment one.
Specific embodiment 7: the difference of present embodiment and specific embodiment six is: the electron beam evaporation
Detailed process is as follows for method:
One, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 1 × 10-5Pa~5 × 10-4Pa；
Two, electron gun is opened to UB2Evaporation source carries out preheating 5min~20min, and electron beam line is 25mA, beam spot
Sinusoidal motion is done in crucible centre；
It three, is 10mA~100mA in electron beam line, anode voltage is 1kV~10kV, opens baffle, starts to be deposited, steams
The plating time be 5min~360min, and be deposited during rotary support table with 15rpm rotation；
Four, UB is deposited to surface at being 300~900 DEG C in temperature2The mandrel of film is annealed, annealing time 60min,
It completes to be coated with UB using electron beam evaporation method in mandrel surface2Film.
Other are identical as specific embodiment six.
Using following experimental verifications effect of the present invention.
A kind of embodiment 1: UB2Application of the film on black chamber, UB2Film substitutes black chamber Au/B as scattered/protective layer is subtracted
Subtract scattered layer and Au protective layer is applied on black chamber.
The present embodiment utilizes UB2Film is as follows as the method for subtracting scattered/protective layer: by Deposited By Dc Magnetron Sputtering side
Method, with UB2Target carries out magnetron sputtering deposition, the UB by DC power supply2Target purity is greater than 99%；
Detailed process is as follows for the Deposited By Dc Magnetron Sputtering method:
One, 10 mandrels are mounted on rotary support table, adjust UB2Target and mandrel centre distance are 15cm, UB2Target surface
Plane where centre normal and mandrel is in 45 ° of angles；
Two, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 1 × 10-7Pa is then charged with high-purity argon
Gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.5Pa, the purity of the high-purity argon gas is 99.9999%；
Three, 15min is etched to mandrel surface using low energy ion beam, mandrel surface is being etched using low-power plasma beam
During rotary support table with 15rpm rotation；
Four, UB2Baffle is equipped between target and mandrel, in UB2Target Dc source power is that pre-sputtering 15min is carried out under 200W；
Five, UB is opened2Baffle between target and mandrel, in UB2Target Dc source power is 90min to be deposited under 200W, and sink
During product rotary support table is completed to deposit UB using DC magnetron sputtering method in mandrel surface with 15rpm rotation2It is thin
Film.
The UB that the present embodiment is obtained2Film, scanning electron microscope carries out microstructure observation, it can be found that film uniformly causes
Close, the defects of discernable hole, cracking, exists, and film thickness is~350nm.
A kind of embodiment 2: UB2Application of the film on black chamber, UB2Film substitutes black chamber Au/B as scattered/protective layer is subtracted
Subtract scattered layer and Au protective layer is applied on black chamber.
The present embodiment utilizes UB2Film is as follows as the method for subtracting scattered/protective layer: passing through double target magnetic control sputtering co-deposition sides
Method carries out sputtering sedimentation by radio-frequency power supply by DC power supply, B target with U target, and the U target purity is described greater than 99%
B target purity is greater than 99%；
Detailed process is as follows for double target magnetic control sputtering co-deposition methods:
One, 1 mandrel is mounted on rotary support table, the normal of plane is in symmetrical point where U target and B target and mandrel
Cloth, and plane where target surface centre normal and mandrel is in 45 ° of angles, adjustment U target and mandrel centre distance are 9cm, adjustment B target with
Mandrel centre distance is 9cm；
Two, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 5 × 10-8Pa is then charged with high-purity argon
Gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.3Pa, the purity of the high-purity argon gas is 99.9999%；
Three, 20min is etched to mandrel surface using low energy ion beam, mandrel surface is being etched using low-power plasma beam
During rotary support table with 15rpm rotation；
Four, it is respectively equipped with baffle between U target, B target and mandrel, is 40W and B target radio-frequency power supply in U target Dc source power
Power is that pre-sputtering 15min is carried out under 200W；
Five, the baffle between U target, B target and mandrel is opened, is 40W and B target radio-frequency power supply function in U target Dc source power
Rate is to deposit 30min under 200W, and in deposition process rotary support table is completed to utilize in mandrel surface double with 15rpm rotation
Target magnetic control sputtering co-deposition method deposits UB2Film.
The UB that the present embodiment obtains2Film, the turnover rate of its B element is only~1% during demoulding, thin compared with Au/B
The turnover rate of B element reduces 90%~95% when film demoulds.
A kind of embodiment 3: UB2Application of the film on black chamber, UB2Film substitutes black chamber Au/B as scattered/protective layer is subtracted
Subtract scattered layer and Au protective layer is applied on black chamber.
The present embodiment utilizes UB2Film is as follows as the method for subtracting scattered/protective layer: by electron beam evaporation method, with UB2
It is deposited for evaporation source, the UB2The purity of evaporation source is greater than 99%；
Detailed process is as follows for the electron beam evaporation method:
One, being vacuumized by mechanical pump, molecular pump makes settling chamber's base vacuum reach 1 × 10-4Pa；
Two, electron gun is opened to UB2Evaporation source carries out preheating 10min, and electron beam line is 25mA, and beam spot is in crucible
Do sinusoidal motion in centre；
Three, it is 50mA, anode voltage 6kV in electron beam line, opens baffle, start to be deposited, evaporation time is
10min, and rotary support table obtains surface vapor deposition UB with 15rpm rotation during vapor deposition2The mandrel of film；
Four, UB is deposited to surface at being 400 DEG C in temperature2The mandrel of film is annealed, annealing time 60min, i.e., complete
UB is coated with using electron beam evaporation method in mandrel surface2Film.
The UB that the present embodiment obtains2Film, its U:B element ratio of film of the deposition of front and back 6 times are 1.95~2.00, and identical
The Au/B film that different batches are coated under process conditions is compared, UB2B element content fluctuation reduces 60% in film.
Claims (7)
1. a kind of UB2Application of the film on black chamber, it is characterised in that UB2Film subtracts as scattered/black chamber Au/B of protective layer substitution is subtracted
It dissipates layer and Au protective layer is applied on black chamber.
2. a kind of UB according to claim 12Application of the film on black chamber, it is characterised in that utilize UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by Deposited By Dc Magnetron Sputtering method, with UB2Target carries out magnetron sputtering by DC power supply
Deposition, the UB2Target purity is greater than 99%.
3. a kind of UB according to claim 22Application of the film on black chamber, it is characterised in that the direct magnetic control splashes
Penetrating deposition method, detailed process is as follows:
One, 1~10 mandrel is mounted on rotary support table, adjusts UB2Target and mandrel centre distance are 5cm~20cm, UB2
Plane where target surface centre normal and mandrel is in 45 ° of angles；
Two, being vacuumized by mechanical pump and molecular pump makes settling chamber's base vacuum reach 1 × 10-8Pa~1 × 10-6Then Pa fills
Enter high-purity argon gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.1Pa~1Pa, the purity of the high-purity argon gas is
99.9999%；
Three, 3min~20min is etched to mandrel surface using low energy ion beam, mandrel surface is being carved using low-power plasma beam
Rotary support table is during erosion with 1~30rpm rotation；
Four, UB2Baffle is equipped between target and mandrel, in UB2Target Dc source power is that pre-sputtering 10min is carried out under 50W~400W
~30min；
Five, UB is opened2Baffle between target and mandrel, in UB2Target Dc source power be 50W~400W under deposit 5min~
480min, and in deposition process rotary support table is completed to splash in mandrel surface using direct magnetic control with 1rpm~30rpm rotation
Shooting method deposits UB2Film.
4. a kind of UB according to claim 12Application of the film on black chamber, it is characterised in that utilize UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by double target magnetic control sputtering co-deposition methods, passing through radio frequency by DC power supply, B target with U target
Power supply carries out sputtering sedimentation, and the U target purity is greater than 99%, and the B target purity is greater than 99%.
5. a kind of UB according to claim 42Application of the film on black chamber, it is characterised in that double target magnetic controls splash
Penetrating co-deposition method, detailed process is as follows:
One, 1 mandrel is mounted on rotary support table, U target and B target divide relative to the normal of plane where mandrel in symmetrical
Cloth, and plane where target surface centre normal and mandrel is in 45 ° of angles, adjustment U target and mandrel centre distance are 5cm~20cm, are adjusted
Whole B target and mandrel centre distance are 5cm~20cm；
Two, being vacuumized by mechanical pump and molecular pump makes settling chamber's base vacuum reach 1 × 10-8Pa~1 × 10-6Then Pa fills
Enter high-purity argon gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.1Pa~1Pa, the purity of the high-purity argon gas is
99.9999%；
Three, 3min~20min is etched to mandrel surface using low energy ion beam, mandrel surface is being carved using low-power plasma beam
Rotary support table is during erosion with 1rpm~30rpm rotation；
Four, it is respectively equipped with baffle between U target, B target and mandrel, is 40W and B target radio-frequency power supply power in U target Dc source power
To carry out pre-sputtering 10min~30min under 200W；
Five, the baffle between U target, B target and mandrel is opened, is 20~200W and B target radio-frequency power supply function in U target Dc source power
Rate is 5min~480min to be deposited under 100W~500W, and rotary support table is with 1rpm~30rpm rotation, i.e., complete in deposition process
UB is deposited using double target magnetic control sputtering co-deposition methods in mandrel surface2Film.
6. a kind of UB according to claim 12Application of the film on black chamber, it is characterised in that utilize UB2Film, which is used as, to be subtracted
The method of scattered/protective layer is as follows: by electron beam evaporation method, with UB2It is deposited for evaporation source, the UB2Evaporation source
Purity is greater than 99%.
7. a kind of UB according to claim 62Application of the film on black chamber, it is characterised in that the electron beam evaporation
Detailed process is as follows for method:
One, being vacuumized by mechanical pump and molecular pump makes settling chamber's base vacuum reach 1 × 10-5Pa~5 × 10-4Pa；
Two, electron gun is opened to UB2Evaporation source carries out preheating 5min~20min, and electron beam line is 25mA, and beam spot is in earthenware
Do sinusoidal motion in crucible centre；
It three, is 10mA~100mA in electron beam line, anode voltage is 1kV~10kV, opens baffle, starts to be deposited, when vapor deposition
Between be 5min~360min, and be deposited during rotary support table with 15rpm rotation；
Four, UB is deposited to surface at being 300~900 DEG C in temperature2The mandrel of film is annealed, annealing time 60min, i.e., complete
UB is coated with using electron beam evaporation method in mandrel surface2Film.
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| CN109036589B (en) * | 2018-07-25 | 2019-11-26 | 中国工程物理研究院激光聚变研究中心 | A kind of application for mixing tantalum uranium film on black chamber |
| CN109913800B (en) * | 2019-04-10 | 2020-11-17 | 中国工程物理研究院激光聚变研究中心 | Method for preparing compact copper protective layer on surface of aluminum mold core |
| CN111826609B (en) * | 2020-03-30 | 2022-06-28 | 中国工程物理研究院激光聚变研究中心 | U-W-N ternary film and preparation method and application thereof |
| CN111575709B (en) * | 2020-06-18 | 2021-12-17 | 中国工程物理研究院激光聚变研究中心 | Silver black cavity manufacturing method |
| CN113249694B (en) * | 2021-05-12 | 2022-03-15 | 中国工程物理研究院激光聚变研究中心 | Sputtering inner plating black cavity and preparation method thereof |
| CN115091131B (en) * | 2022-06-29 | 2023-10-20 | 中国工程物理研究院激光聚变研究中心 | Nickel CH composite black cavity manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50124095A (en) * | 1974-01-28 | 1975-09-29 | ||
| CN103088293A (en) * | 2013-02-01 | 2013-05-08 | 天津大学 | GdN film with large magnetoresistance effect, and preparation method thereof |
| CN105158789A (en) * | 2015-09-11 | 2015-12-16 | 中国工程物理研究院激光聚变研究中心 | Spatial distinguishing radiant flux detection apparatus |
| CN105951050A (en) * | 2016-06-06 | 2016-09-21 | 中国工程物理研究院激光聚变研究中心 | Quick dissolving mold core capable of shortening removal time and using method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101889483B (en) * | 2007-10-04 | 2013-11-20 | 劳伦斯·利弗莫尔国家安全有限责任公司 | Control of a laser inertial confinement fusion-fission power plant |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50124095A (en) * | 1974-01-28 | 1975-09-29 | ||
| CN103088293A (en) * | 2013-02-01 | 2013-05-08 | 天津大学 | GdN film with large magnetoresistance effect, and preparation method thereof |
| CN105158789A (en) * | 2015-09-11 | 2015-12-16 | 中国工程物理研究院激光聚变研究中心 | Spatial distinguishing radiant flux detection apparatus |
| CN105951050A (en) * | 2016-06-06 | 2016-09-21 | 中国工程物理研究院激光聚变研究中心 | Quick dissolving mold core capable of shortening removal time and using method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 点火黑腔用铝铜复合芯轴的制备及性能;赵利平 等;《强激光与粒子束》;20131231;第25卷(第12期);第3255-3258页 |
| 磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究;易泰民 等;《物理学报》;20131231;第1-7页 |
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