CN109036589A - A kind of application for mixing tantalum uranium film on black chamber - Google Patents
A kind of application for mixing tantalum uranium film on black chamber Download PDFInfo
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- CN109036589A CN109036589A CN201810829526.9A CN201810829526A CN109036589A CN 109036589 A CN109036589 A CN 109036589A CN 201810829526 A CN201810829526 A CN 201810829526A CN 109036589 A CN109036589 A CN 109036589A
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- target
- uranium
- tantalum
- mandrel
- film
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Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B1/00—Thermonuclear fusion reactors
- G21B1/11—Details
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
A kind of application for mixing tantalum uranium film on black chamber, it belongs to laser-produced fusion field of engineering technology, and in particular to a kind of application for mixing tantalum uranium film.The purpose of the present invention is to solve liner laser-golden in existing uranium black chamber, X-ray transfer efficiency is insufficient, M band X-ray yield is high, and the problem that the desired no liner uranium black chamber poor chemical stability of physics, black cavity configuration are unstable.One kind being mixed tantalum uranium film and used as black intracavitary lining protective layer, or is applied on black chamber as energy conversion coating.Advantage: have in good high oxidation and corrosion resistance；As liner protective layer, while protecting uranium black chamber energy conversion coating, also there is better interface binding power, chemical compatibility and higher energy coupling efficiency；As energy conversion coating, there is higher laser-X-ray transfer efficiency, lower M band X-ray yield compared to Au, compared to U its with chemical stability outstanding and structural reliability.
Description
Technical field
The invention belongs to laser-produced fusion field of engineering technology, and in particular to a kind of application for mixing tantalum uranium film.
Background technique
Driving laser inertial confinement fusion is an important directions of controlled nuclear fusion research indirectly, has entrusted to the care of people to one
Lao Yongyi solves the problems, such as the wonderful dream of mankind's energy demand.Black chamber is that one of indirect driving laser inertial confinement fusion is important
Component part plays the role of converting X-ray for laser energy, and the conversion for being directly related to driver energy and X-ray is imitated
The spatial symmetry of rate and radiation field, clean property.
Au is due to its higher atomic number (Z), excellent chemical stability by main as black chamber cavity wall for a long time
Candidate material.Relative to traditional black chamber of gold, research shows that M band X-ray can be effectively suppressed as black chamber energy conversion coating in metal U
Yield significantly improves laser-X-ray transfer efficiency.But the chemical property of U is extremely active, the desired no liner uranium black chamber of physics
The problems such as poor chemical stability, black cavity configuration be unstable, there are impassable technical bottlenecks in preparation.Thus in uranium black chamber system
During standby, usually layer of Au need to be deposited as black intracavitary lining protective layer on its surface, while to reduce the unfavorable shadow of internal layer Au
It rings, Au overcoat thickness only has 100nm~700nm.U active chemical property and limited Au overcoat thickness are to uranium black chamber
Preparation brings great challenge, and black chamber is often faced with that binding force of cladding material is poor, Au protective layer is damaged, black chamber is bulging in preparation process
The risks such as packet layering, but its question classification still due to metal U easily oxidation corrosion and then causes black chamber to fail.Using this knot
Structure and the black chamber of material propose harsh requirement to mandrel surface processing quality, film gauge uniformity, releasing process etc., black
The preparation difficulty of chamber is excessive, is unfavorable for ensureing the preparation yield rate of black chamber and its reliability.
Summary of the invention
The purpose of the present invention is to solve liner laser-golden in existing uranium black chamber, X-ray transfer efficiency is insufficient, M band X is penetrated
Line yield is high, and the problem that the desired no liner uranium black chamber poor chemical stability of physics, black cavity configuration are unstable, and provides one kind
Mix application of the tantalum uranium film on black chamber.
A kind of application for mixing tantalum uranium film on black chamber is mixed tantalum uranium film and is used as black intracavitary lining protective layer or conduct
Energy conversion coating is applied on black chamber.
The invention has the advantages that (1) is to improve laser-X-ray coupling efficiency, usually select high Z element for black chamber as far as possible
Preparation.Ta and Au belong to middle Z element, have similar thermal capacitance.Select Ta as doped chemical, so that adulterating mixing for a small amount of Ta
Tantalum uranium shows hohlraum physics performance extremely similar with U, has in terms of black chamber M band X-ray yield, global radiation compared with Au
Clear superiority.(2) due to good high oxidation and corrosion resistance, mixing tantalum uranium film can be used for substituting Au as black intracavitary lining protection
Layer has be more good interface binding power and chemical compatibility with uranium black chamber energy conversion coating, while being conducive to laser-X
Ray coupling efficiency.(3) tantalum uranium film of the present invention of mixing is alternatively arranged as black chamber energy conversion coating, is not reducing uranium black chamber
Under the premise of energy, by the doping of small amount Ta to significantly improve the high oxidation and corrosion resistance of material, so that uranium black be effectively reduced
The preparation difficulty of chamber promotes black chamber atmosphere storage life.(4) tantalum uranium film is mixed applied to black chamber, both can be used as black intracavitary lining
Protective layer, and can be used as energy conversion coating, while enriching black cavity material range of choice, significantly improving black chamber can be designed
Property.Wherein using mix tantalum uranium film as liner protective layer, mix tantalum uranium film or metallic uranium film as energy conversion coating nothing in
Lining uranium black chamber theoretically has more superior hohlraum physics performance.As it can be seen that mixing tantalum uranium film applied to black chamber, prevent as liner
Sheath also has better interface binding power, chemical compatibility, and higher while protecting uranium black chamber energy conversion coating
Energy coupling efficiency；As energy conversion coating, there is higher laser-X-ray transfer efficiency, lower M band X compared to Au
Ray yield, compared to U its with chemical stability outstanding and structural reliability.In conclusion mixing tantalum uranium film on black chamber
Application, material guarantee and technical support can be provided for the flexible design of black chamber.
Specific embodiment
Specific embodiment 1: present embodiment is a kind of application for mixing tantalum uranium film on black chamber, tantalum uranium film work is mixed
It uses for black intracavitary lining protective layer, or is applied on black chamber as energy conversion coating.
Tantalum uranium film is mixed as liner protective layer, mixes tantalum uranium while protecting uranium black chamber energy conversion coating, is also had more
Good interface binding power and chemical compatibility and higher energy coupling efficiency.
Tantalum uranium film is mixed as energy conversion coating, and mixing tantalum uranium compared to Au has higher laser-X-ray transfer efficiency, more
Low M band X-ray yield, compared to U its with chemical stability outstanding and structural reliability.
Specific embodiment 2: the difference of present embodiment and specific embodiment one is: described to mix in tantalum uranium film
Tantalum content is 3at.%~12at.%.Other are same as the specific embodiment one.
Specific embodiment 3: one of present embodiment and specific embodiment one or two difference are: described to mix tantalum uranium
Film is prepared by double target magnetic control sputtering co-deposition methods.Other are the same as one or two specific embodiments.
Specific embodiment 4: the difference of present embodiment and specific embodiment three is: double target magnetic controls splash
Penetrating co-deposition method, detailed process is as follows:
One, U target and Ta target and the normal of plane where mandrel are symmetric, and the target surface centre normal and mandrel of U target
Place plane is in 45 ° of angles, and plane where the target surface centre normal and mandrel of Ta target is in 45 ° of angles, adjustment U target and mandrel center
Distance is 5cm~20cm, and adjustment Ta target and mandrel centre distance are 5cm~20cm；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum degree of settling chamber reach 1 × 10-8Pa~1 × 10-6Pa, so
After be filled with high-purity argon gas, and adjusting slide valve makes the vacuum degree of settling chamber maintain 0.1Pa~1Pa, the high-purity argon gas
Purity is 99.9999%；
Three, 3min~20min is etched to mandrel surface using ion beam, rotary support table is during etching with revolving speed
It is rotated for 1rpm~30rpm；
Four, it is respectively equipped with baffle between Ta target and mandrel between U target and mandrel, is in U target Dc source power
160W and Ta target Dc source power is that pre-sputtering 10min~30min is carried out under 160W；
Five, open the baffle between U target and mandrel between Ta target and mandrel, U target Dc source power be 100W~
500W and Ta target Dc source power is 5min~480min to be deposited under 10W~100W, and deposition process rotary support table is to turn
Speed is that 1rpm~30rpm is rotated, that is, completes to mix tantalum uranium using double target magnetic control sputtering co-deposition method depositions in mandrel surface
Film.
Other are the same as the specific implementation mode 3.
Specific embodiment 5: the difference of present embodiment and specific embodiment four is: U target described in step 1
Purity be greater than 99%.Other are identical as specific embodiment four.
Specific embodiment 6: one of present embodiment and specific embodiment four or five difference are: institute in step 1
The purity for the Ta target stated is greater than 99%.Other are identical as specific embodiment four or five.
Specific embodiment 7: one of present embodiment and specific embodiment four to six difference are: in step 3
Ion energy be 50eV~500eV and ion beam current be under 5mA~100mA using ion beam to mandrel surface etching 3min~
20min.Other are identical as specific embodiment four to six.
Specific embodiment 8: one of present embodiment and specific embodiment one or two difference are: described to mix tantalum uranium
Film carries out sputtering sedimentation by Deposited By Dc Magnetron Sputtering method, to mix tantalum uranium target by DC power supply, and described mixes tantalum uranium
The purity of target is greater than 99%.Other are the same as one or two specific embodiments.
Specific embodiment 9: the difference of present embodiment and specific embodiment eight is: the direct magnetic control splashes
Penetrating deposition method, detailed process is as follows:
One, 1~10 mandrel is mounted on rotary support table, adjustment mix tantalum uranium target and mandrel centre distance be 5cm~
20cm, the target surface centre normal and mandrel place plane for mixing tantalum uranium target are in 45 ° of angles；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum degree of settling chamber reach 1 × 10-8Pa~1 × 10-6Pa, so
After be filled with high-purity argon gas, and adjusting slide valve makes the vacuum degree of settling chamber maintain 0.1Pa~1Pa, the high-purity argon gas
Purity is 99.9999%；
Three, 3min~20min is etched to mandrel surface using ion beam, rotary support table is during etching with revolving speed
It is rotated for 1rpm~30rpm；
Four, it mixes and is equipped with baffle between tantalum uranium target and mandrel, carried out in the case where mixing tantalum uranium target Dc source power and being 50W~400W
Pre-sputtering 10min~30min；
Five, the baffle mixed between tantalum uranium target and mandrel is opened, is mixing tantalum uranium target Dc source power for 50W~400W sinking
Product 5min~480min, and rotary support table is rotated with revolving speed for 1rpm~30rpm in deposition process, that is, is completed in mandrel
Tantalum uranium film is mixed using DC magnetron sputtering method deposition in surface.
Other are identical as specific embodiment eight.
Specific embodiment 10: the difference of present embodiment and specific embodiment nine is: in ion energy in step 3
Amount is 50eV~500eV and ion beam current is to etch 3min~20min to mandrel surface using ion beam under 5mA~100mA.Its
He is identical as specific embodiment nine.
The content of present invention is not limited only to the content of the respective embodiments described above, the group of one of them or several specific embodiments
The purpose of invention also may be implemented in contract sample.
Embodiment 1: a kind of application for mixing tantalum uranium film on black chamber, mix tantalum uranium film makes as black intracavitary lining protective layer
With.
Mix in the present embodiment tantalum uranium film the preparation method is as follows: by double target magnetic control sputtering co-deposition methods, with U target and
Ta target carries out sputtering sedimentation by DC power supply, and the U target purity is better than 99%, and the Ta target purity is better than 99%.
Detailed process is as follows for double target magnetic control sputtering co-deposition methods:
One, 4 mandrels are mounted on rotary support table, the normal of plane is in symmetrical point where U target and Ta target and mandrel
Cloth, and plane where target surface centre normal and mandrel is in 45 ° of angles, adjustment U target and mandrel centre distance are 12cm, adjust Ta target
It is 12cm with mandrel centre distance；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum of settling chamber reach 1 × 10-7Pa is then charged with high-purity argon
Gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.5Pa, the purity of the high-purity argon gas is 99.9999%；
Three, 5min is etched to mandrel surface using ion beam in the case where ion energy is 200eV and ion beam current is 10mA,
Using ion beam to rotary support table in mandrel surface etching process with 10rpm rotation；
Four, it is respectively equipped with baffle between U target, Ta target and mandrel, is 160W and Ta target direct current in U target Dc source power
Source power is that pre-sputtering 15min is carried out under 160W；
Five, the baffle between U target, Ta target and mandrel is opened, is 200W and Ta target DC power supply in U target Dc source power
Power is to deposit 60min under 20W, and in deposition process rotary support table is completed to utilize in mandrel surface double with 10rpm rotation
Target magnetic control sputtering co-deposition method deposition mixes tantalum uranium film.
The present embodiment obtain mix tantalum uranium film, through x-ray photoelectron spectroscopy analysis shows film Ta content be~
6at.%.Films ' Microstructure observation is carried out using scanning electron microscope, it can be found that film surface even compact, no hole, crackle
The defects of exist, film thickness be~550nm.
Embodiment 2: a kind of application for mixing tantalum uranium film on black chamber mixes tantalum uranium film as black intracavitary lining protective layer.
Mix in the present embodiment tantalum uranium film the preparation method is as follows: by Deposited By Dc Magnetron Sputtering method, to mix tantalum uranium
Target carries out magnetron sputtering deposition by DC power supply, and described to mix tantalum uranium target purity be 99.9%, Ta content is 10at.%.
Detailed process is as follows for the Deposited By Dc Magnetron Sputtering method:
One, 9 mandrels are mounted on rotary support table, it is 10cm that tantalum uranium target and mandrel centre distance are mixed in adjustment, mixes tantalum
Plane where the target surface centre normal and mandrel of uranium target is in 45 ° of angles；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum of settling chamber reach 7 × 10-8Pa is then charged with high-purity argon
Gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.25Pa, the purity of the high-purity argon gas is 99.9999%；
Three, 20min is etched to mandrel surface using ion beam in the case where ion energy is 400eV and ion beam current is 20mA,
Rotary support table is during being etched using ion beam to mandrel surface with 5rpm rotation；
Four, it mixes and is equipped with baffle between tantalum uranium target and mandrel, splashed in advance in the case where mixing tantalum uranium target Dc source power and being 100W
Penetrate 12min；
Five, the baffle mixed between tantalum uranium target and mandrel is opened, is deposited in the case where mixing tantalum uranium target Dc source power and being 100W
180min, and in deposition process rotary support table is completed to utilize Deposited By Dc Magnetron Sputtering in mandrel surface with 5rpm rotation
Method deposition mixes tantalum uranium film.
It is that~9.8at.% is based on after film exposes 4 days in air that the present embodiment obtained, which mixes tantalum uranium film Ta content,
Ion etching depth profiling can be found that film surface oxidated layer thickness is~11nm, and surface color is without significant change；And it is identical
Under the conditions of metal U film oxidation layer with a thickness of~57nm, surface is in yellowish-brown.Therefore the antioxygen of tantalum uranium film is mixed through the invention
Change the inoxidizability that performance is much larger than metal U film, can be used as black intracavitary lining protective layer so the present invention mixes tantalum uranium film and make
With.
Embodiment 3: a kind of application for mixing tantalum uranium film on black chamber mixes tantalum uranium film as energy conversion coating applied to black
On chamber.
Mix in the present embodiment tantalum uranium film the preparation method is as follows: by Deposited By Dc Magnetron Sputtering method, to mix tantalum uranium
Target carries out magnetron sputtering deposition by DC power supply, and described to mix tantalum uranium target purity be 99.9%, Ta content is 10at.%.
Detailed process is as follows for the Deposited By Dc Magnetron Sputtering method:
One, 9 mandrels are mounted on rotary support table, it is 10cm that tantalum uranium target and mandrel centre distance are mixed in adjustment, mixes tantalum
Plane where the target surface centre normal and mandrel of uranium target is in 45 ° of angles；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum of settling chamber reach 7 × 10-8Pa is then charged with high-purity argon
Gas, and adjusting slide valve makes settling chamber's vacuum degree maintain 0.4Pa, the purity of the high-purity argon gas is 99.9999%；
Three, 20min is etched to mandrel surface using ion beam in the case where ion energy is 400eV and ion beam current is 20mA,
Rotary support table is during being etched using ion beam to mandrel surface with 5rpm rotation；
Four, it mixes and is equipped with baffle between tantalum uranium target and mandrel, splashed in advance in the case where mixing tantalum uranium target Dc source power and being 160W
Penetrate 6min；
Five, the baffle mixed between tantalum uranium target and mandrel is opened, is deposited in the case where mixing tantalum uranium target Dc source power and being 160W
300min, and in deposition process rotary support table is completed to utilize Deposited By Dc Magnetron Sputtering in mandrel surface with 5rpm rotation
Method deposition mixes tantalum uranium film.
Au film sample of the tantalum uranium film sample with identical size is mixed by what the present embodiment obtained, in identical experiment condition
Lower development radiation ablation confirmatory experiment.3 double-frequency laser wavelength 350nm, laser energy~3kJ, the experimental results showed that it is thin to mix tantalum uranium
Film sample global radiation stream improves~10% compared with Au film sample, while M band X-ray yield reduces~90%.Pass through radiation
Ablation confirmatory experiment compares, and it is more preferable that the present invention mixes tantalum uranium film ratio Au film performance, thus the present invention mix tantalum uranium film can
Using as black chamber energy conversion coating.
Claims (10)
1. a kind of application for mixing tantalum uranium film on black chamber, it is characterised in that mix tantalum uranium film makes as black intracavitary lining protective layer
With, or as energy conversion coating applied on black chamber.
2. a kind of application for mixing tantalum uranium film on black chamber according to claim 1, it is characterised in that described to mix tantalum uranium thin
Tantalum content is 3at.%~12at.% in film.
3. a kind of application for mixing tantalum uranium film on black chamber according to claim 1 or 2, it is characterised in that described to mix tantalum uranium
Film is prepared by double target magnetic control sputtering co-deposition methods.
4. a kind of application for mixing tantalum uranium film on black chamber according to claim 3, it is characterised in that double target magnetic
Detailed process is as follows for control sputtering co-deposition method:
One, U target and Ta target and the normal of plane where mandrel are symmetric, and where the target surface centre normal of U target and mandrel
Plane is in 45 ° of angles, and plane where the target surface centre normal and mandrel of Ta target is in 45 ° of angles, adjustment U target and mandrel centre distance
For 5cm~20cm, adjusts Ta target and mandrel centre distance is 5cm~20cm；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum degree of settling chamber reach 1 × 10-8Pa~1 × 10-6Then Pa fills
Enter high-purity argon gas, and adjusting slide valve makes the vacuum degree of settling chamber maintain 0.1Pa~1Pa, the purity of the high-purity argon gas
It is 99.9999%；
Three, 3min~20min is etched to mandrel surface using ion beam, rotary support table is during etching with revolving speed
1rpm~30rpm is rotated；
Four, be respectively equipped with baffle between Ta target and mandrel between U target and mandrel, U target Dc source power be 160W and
Ta target Dc source power is that pre-sputtering 10min~30min is carried out under 160W；
Five, the baffle between U target and mandrel between Ta target and mandrel is opened, is 100W~500W in U target Dc source power
It is 5min~480min to be deposited under 10W~100W, and deposition process rotary support table is with Ta target Dc source power with revolving speed
1rpm~30rpm is rotated, that is, completes to mix tantalum uranium film using double target magnetic control sputtering co-deposition method depositions in mandrel surface.
5. a kind of application for mixing tantalum uranium film on black chamber according to claim 4, it is characterised in that described in step 1
U target purity be greater than 99%.
6. a kind of application for mixing tantalum uranium film on black chamber according to claim 4, it is characterised in that described in step 1
Ta target purity be greater than 99%.
7. a kind of application for mixing tantalum uranium film on black chamber according to claim 4, it is characterised in that in step 3 from
Sub- energy be 50eV~500eV and ion beam current be under 5mA~100mA using ion beam to mandrel surface etching 3min~
20min。
8. a kind of application for mixing tantalum uranium film on black chamber according to claim 1 or 2, it is characterised in that described to mix tantalum uranium
Film carries out sputtering sedimentation by Deposited By Dc Magnetron Sputtering method, to mix tantalum uranium target by DC power supply, and described mixes tantalum uranium
The purity of target is greater than 99%.
9. a kind of application for mixing tantalum uranium film on black chamber according to claim 8, it is characterised in that the DC magnetic
Controlling sputter deposition, detailed process is as follows:
One, 1~10 mandrel being mounted on rotary support table, tantalum uranium target is mixed in adjustment and mandrel centre distance is 5cm~20cm,
The target surface centre normal and mandrel place plane for mixing tantalum uranium target are in 45 ° of angles；
Two, being vacuumized by mechanical pump and molecular pump makes the vacuum degree of settling chamber reach 1 × 10-8Pa~1 × 10-6Then Pa fills
Enter high-purity argon gas, and adjusting slide valve makes the vacuum degree of settling chamber maintain 0.1Pa~1Pa, the purity of the high-purity argon gas
It is 99.9999%；
Three, 3min~20min is etched to mandrel surface using ion beam, rotary support table is during etching with revolving speed
1rpm~30rpm is rotated；
Four, it mixes and is equipped with baffle between tantalum uranium target and mandrel, splashed in advance in the case where mixing tantalum uranium target Dc source power and being 50W~400W
Penetrate 10min~30min；
Five, the baffle mixed between tantalum uranium target and mandrel is opened, is deposited in the case where mixing tantalum uranium target Dc source power and being 50W~400W
5min~480min, and rotary support table is rotated with revolving speed for 1rpm~30rpm in deposition process, that is, is completed in mandrel table
Tantalum uranium film is mixed using DC magnetron sputtering method deposition in face.
10. a kind of application for mixing tantalum uranium film on black chamber according to claim 9, it is characterised in that in step 3 from
Sub- energy be 50eV~500eV and ion beam current be under 5mA~100mA using ion beam to mandrel surface etching 3min~
20min。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111575709A (en) * | 2020-06-18 | 2020-08-25 | 中国工程物理研究院激光聚变研究中心 | Silver black cavity manufacturing method |
| CN111826609A (en) * | 2020-03-30 | 2020-10-27 | 中国工程物理研究院激光聚变研究中心 | U-W-N ternary film and preparation method and application thereof |
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| LIANG GUO ET AL.: "Uranium hohlraum with an ultrathin uranium–nitride coating layer for low hard x-ray emission and high radiation temperature", 《NEW JOURNAL OF PHYSICS》 * |
| N. A. HEIN ER AL.: "Production Manufacturing of Gold-Depleted Uranium Layered Hohlraums for the National Ignition Facility", 《FUSION SCIENCE AND TECHNOLOGY 》 * |
| 易泰民 等: "磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究", 《物理学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111826609A (en) * | 2020-03-30 | 2020-10-27 | 中国工程物理研究院激光聚变研究中心 | U-W-N ternary film and preparation method and application thereof |
| CN111575709A (en) * | 2020-06-18 | 2020-08-25 | 中国工程物理研究院激光聚变研究中心 | Silver black cavity manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109036589B (en) | 2019-11-26 |
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