CN111826609A - U-W-N ternary film and preparation method and application thereof - Google Patents
U-W-N ternary film and preparation method and application thereof Download PDFInfo
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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Abstract
A U-W-N ternary film and a preparation method and application thereof belong to the technical field of laser fusion engineering, and particularly relate to a U-W-N ternary film with black cavity dispersion reducing and protecting functions and a preparation method and application thereof. The invention aims to solve the problems of complicated structure layer and UN (UN-uranium black) of the conventional uranium black cavityxThe regulation and control range of the N content in the diffusion reducing/protecting layer is limited, the capability of inhibiting stimulated Brillouin scattering is limited, and the problems that an Au protecting layer M is easy to excite with hard X rays and super-thermal electrons are solved. The mass fraction of N in the U-W-N ternary film is x percent, x is more than 0 and less than or equal to 66.7, the mass fraction of W is y percent, y is more than 0 and less than or equal to 10 percent, and the balance is U. The preparation method comprises the following steps: adopting a direct-current reaction magnetron sputtering codeposition method and using N2And (3) as reaction gas, carrying out magnetron sputtering deposition on a U target and a W target through a direct current power supply to obtain the U-W-N ternary film. Ternary of U-W-NThe film is applied as a diffusion/barrier layer over the black cavity.
Description
Technical Field
The invention belongs to the technical field of laser fusion engineering, and particularly relates to a U-W-N ternary film with black cavity dispersion reducing and protecting functions, and a preparation method and application thereof.
Background
In order to realize the scientific engineering with global challenge of laser indirect drive controlled thermonuclear fusion (ICF), a black cavity material with more excellent comprehensive performance of conversion efficiency and radiation field characteristics is always sought. Theoretical analysis and experimental research show that compared with the traditional Au black cavity, the metal U with higher radiation and opacity is used as the material of the wall of the black cavity, so that the energy loss can be reduced by about 17%, and meanwhile, the hard X-ray and the super-thermionic yield of the M band can be effectively inhibited (O.Jones, J.Schein, M.Rosen, et al.Phys.Plasmas,2007,14, 056311). However, due to the chemical activity of U, the U black cavity is designed in the united states as an "Au-U-Au" sandwich structure, with the inner Au layer serving to prevent oxidation of U. In addition, researches show that the low-Z element, such as B, is doped in the Au layer in the black cavity to form an Au/B diffusion reducing layer, so that the growth of plasma SBS sprayed from the cavity wall can be inhibited (P.Neumayer, R.L.Berger, D.Callahan, et al.Phys.Plasmas,2008,15,056307), and therefore, the energy utilization efficiency is improved. Currently, the high conversion black cavity base of the national ignition program of the United statesThe constitution is roughly as follows: Au/B diffusion layer-Au inner protection layer-U conversion layer-Au support layer. However, in both the Au/B scattering layer and the Au protective layer, the Au element M with hard X-rays and super-thermionic electrons are easily excited and preferentially penetrate through the target pellet to preheat the fuel, so that a series of problems such as mixing caused by preheating cannot be fundamentally solved. Scientists in China firstly propose that UN with the thickness of hundred nanometers is used as a protective layer in a U black cavity, the influence of hard X rays and super-thermal electrons of an Au element M is eliminated, and the low-Z N element is infiltrated, and the comprehensive performance of inhibiting the growth of SBS and preventing the oxidation of the U layer is considered (Liang Guo, Yongkuning, Pifeng xing, et. However, the U, N binary system has stable chemical formulas of UN and U2N3、UN2In three cases, the adjustment range of the N atom content is limited to 50% -66.7%, otherwise, the excessive metal U phase in the film will cause the film to be oxidized in the air. The N doping ratio in this interval cannot achieve the best effect of suppressing SBS growth.
Disclosure of Invention
The invention aims to solve the problems of complicated structure layer and UN (UN-uranium black) of the conventional uranium black cavityxThe problems that the regulation range of the N content in the diffusion reducing/protecting layer is limited, the capability of inhibiting stimulated Brillouin scattering is limited, and hard X-rays and super-thermal electrons in an Au protecting layer M are easy to excite are solved, and the U-W-N ternary film and the preparation method and the application thereof are provided.
The U-W-N ternary film comprises x mass percent of N, x is more than 0 and less than or equal to 66.7, y mass percent of W is more than 0 and less than or equal to 10, and the balance of U, wherein the thickness of the U-W-N ternary film is 100-700 nm.
A preparation method of a U-W-N ternary film is specifically completed according to the following steps: adopting a direct-current reaction magnetron sputtering codeposition method, using Ar as a protective gas and N2Performing magnetron sputtering deposition on a U target and a W target through a direct current power supply as reaction gas to obtain a U-W-N ternary film, wherein the purity of the U target is more than 99 percent, the purity of the W target is more than 99.99 percent, the purity of Ar is more than 99.9999 percent, and the purity of N is more than 99 percent2The purity of (A) is more than 99.9999%. The application of the U-W-N ternary film as a diffusion reducing/protecting layer on a black cavity.
The application of the U-W-N ternary film as a diffusion reducing/protecting layer on a black cavity.
The invention has the advantages that: firstly, the N atom content in the U-W-N ternary film can be regulated and controlled within a large range (0, 66.7%) by adjusting the ratio of the gas flow of argon to the gas flow of nitrogen, and finally the optimized SBS inhibiting effect is achieved, secondly, a small amount of high-Z alloy element W is added into the U-W-N ternary film, and the chemical stability of the film is improved, thirdly, in order to improve the laser-cavity target coupling efficiency, a high-Z material is usually selected as a black cavity, compared with a transmission black cavity wall material Au, the atomic number of the U element is larger, the laser X-ray conversion efficiency is higher, and meanwhile, the laser X-ray conversion efficiency is lower, the hard X-ray occupation ratio of the M band and the super-thermionic yield, fourthly, when the U-W-N ternary film is applied to the black cavity as a reducing/protecting layer, because the chemical property of the U-W-N ternary film is stable, firstly, the ternary U-W-N film has the effect of preventing the oxidation failure of an internal U conversion layer while inhibiting SBS, and plays a role of a protective layer; and secondly, the uranium black cavity is the main trend of the development of the current ignition black cavity, and the U-W-N ternary film and the U conversion layer form better interface bonding force and chemical compatibility through atomic gradient diffusion. Therefore, when the U-W-N ternary film is used as a dispersion/protection layer and applied to the black cavity, the U-W-N ternary film has the effects of optimizing SBS suppression effect, suppressing M-band hard X-ray and super-thermal electron yield, improving laser X-ray conversion efficiency and protecting a uranium black cavity conversion layer, and can be used for replacing a black cavity UN dispersion/protection layer and an Au protection layer.
Detailed Description
The first embodiment is as follows: the embodiment is a U-W-N ternary film, which is characterized in that the mass fraction of N in the U-W-N ternary film is x percent, x is more than 0 and less than or equal to 66.7, the mass fraction of W is y percent, y is more than 0 and less than or equal to 10 percent, the balance is U, and the thickness of the U-W-N ternary film is 100 nm-700 nm.
The second embodiment is as follows: the embodiment is a preparation method of a U-W-N ternary film, which is specifically completed by the following steps: adopting a direct-current reaction magnetron sputtering codeposition method, using Ar as a protective gas and N2As a reaction gas, a U target and a W target were passed through a direct currentCarrying out magnetron sputtering deposition by a power supply to obtain a U-W-N ternary film, wherein the purity of the U target is more than 99 percent, the purity of the W target is more than 99.99 percent, the purity of the Ar is more than 99.9999 percent, and the purity of the N is more than 99 percent2The purity of (A) is more than 99.9999%.
The third concrete implementation mode: the present embodiment is different from the second embodiment in that: the direct-current reactive magnetron sputtering codeposition method comprises the following specific processes:
firstly, mounting 1-9 mandrels on a rotary support table, adjusting the distance between a U target and the center of the mandrel to be 10-20 cm, and forming an included angle of 45 degrees between the normal line of the center of the U target and the plane of the mandrel; adjusting the distance between the W target and the center of the mandrel to be 10-20 cm, wherein the central normal of the surface of the W target forms an included angle of 45 degrees with the plane of the mandrel; the U target and the W target are symmetrically distributed with the normal of the plane of the mandrel;
secondly, the vacuum degree of the deposition chamber reaches 1 x 10 by using a mechanical pump and molecular pump to pump vacuum-8Pa～1×10-6Pa, then filling protective gas and reaction gas, wherein the gas flow ratio of the protective gas to the reaction gas is 20 (1-5), and adjusting a gate valve to maintain the vacuum degree of the deposition chamber at 0.1 Pa-1 Pa;
etching the surface of the mandrel for 3-20 min by utilizing ion beams, and rotating the support table at the rotating speed of 1-30 rpm in the etching process;
fourthly, baffles are respectively arranged between the U target and the mandrel and between the W target and the mandrel, and pre-sputtering is carried out for 10-20 min under the condition that the power of the U target direct current power supply is 20-400W and the power of the W target direct current power supply is 20-400W;
fifthly, opening baffles between the U target and the mandrel and between the W target and the mandrel, depositing until the thickness of the U-W-N ternary film is 100 nm-700 nm when the power of the U target direct current power supply is 20W-400W and the power of the W target direct current power supply is 20W-400W, and rotating the rotary support table at the rotating speed of 1 rpm-30 rpm in the deposition process to finish the preparation of the U-W-N ternary film on the surface of the mandrel by using a direct-current reactive magnetron sputtering codeposition method.
The rest is the same as the second embodiment.
The fourth concrete implementation mode: the present embodiment is different from the third embodiment in that: and the gas flow of the argon in the second step is 20 sccm. The rest is the same as the third embodiment.
The fifth concrete implementation mode: the third or fourth embodiment is different from the first or second embodiment in that: and in the third step, the surface of the mandrel is etched for 3-20 min by utilizing ion beams under the conditions that the ion energy is 50-500 eV and the ion beam current is 5-100 mA. The other is the same as the third or fourth embodiment.
The sixth specific implementation mode: the present embodiment is an application of a U-W-N ternary film as a diffusion reducing/protective layer for black cavity applications.
The following tests were carried out to confirm the effects of the present invention
Example 1: a preparation method of a U-W-N ternary film is specifically completed according to the following steps:
firstly, mounting 9 mandrels on a rotary support table, adjusting the distance between a U target and the center of the mandrel to be 15cm, and forming an included angle of 45 degrees between the normal line of the center of the U target and the plane of the mandrel; adjusting the distance between the W target and the center of the mandrel to be 15cm, wherein the normal of the center of the surface of the W target forms an included angle of 45 degrees with the plane of the mandrel; the U target and the W target are symmetrically distributed with the normal of the plane of the mandrel;
secondly, the vacuum degree of the deposition chamber reaches 5 multiplied by 10 by using a mechanical pump and molecular pump for vacuum pumping-8Pa, then filling protective gas and reaction gas, wherein the protective gas is argon, the reaction gas is nitrogen, the gas flow of the argon is 20sccm, the gas flow of the nitrogen is 2sccm, and adjusting a gate valve to maintain the vacuum degree of the deposition chamber at 0.7 Pa;
etching the surface of the mandrel for 15min by utilizing an ion beam under the conditions that the ion energy is 250eV and the ion beam current is 10mA, and rotating the support table at the rotating speed of 15rpm in the etching process;
fourthly, baffles are respectively arranged between the U target and the mandrel and between the W target and the mandrel, and pre-sputtering is carried out for 15min under the condition that the power of the U target direct current power supply is 160W and the power of the W target direct current power supply is 40W;
fifthly, opening baffles between the U target and the mandrel and between the W target and the mandrel, depositing for 90min under the conditions that the power of the U target direct current power supply is 160W and the power of the W target direct current power supply is 40W, and rotating the rotary support table in the deposition process at the rotating speed of 15rpm to finish the preparation of the U-W-N ternary film on the surface of the mandrel by using a direct-current reactive magnetron sputtering co-deposition method.
When the ternary U-W-N film obtained in example 1 was measured by an auger electron spectrometer, it was found that the atomic ratio of U: W: N in the ternary U-W-N film obtained in example 1 was 10:1:4, and the thickness of the ternary U-W-N film was about 400 nm; therefore, the atomic percentage of N in the U-W-N ternary film obtained in the embodiment 1 is 26.67%, and the existing UN is broken throughxThe atomic content of N in the dispersion reducing layer is regulated and controlled within the range of 50-66.7%.
Example 2: application of U-W-N ternary film in replacing UNxThe scattering/protection layer and the Au protection layer are applied to the black cavity as the scattering/protection layer to obtain a U-W-N ternary thin film uranium black cavity; the U-W-N ternary film was prepared from example 1.
The service life of the U-W-N ternary film uranium black cavity is represented by an Auger electron spectrometer, the service life is more than 30 days, and the existing UN with the same thicknessx(x ═ 1) black cavities in the reduction/protection layer and Au protection layer, with a lifetime of 7 days.
Claims (6)
1. The U-W-N ternary film is characterized in that the mass fraction of N in the U-W-N ternary film is x percent, x is more than 0 and less than or equal to 66.7, the mass fraction of W is y percent, y is more than 0 and less than or equal to 10 percent, the balance is U, and the thickness of the U-W-N ternary film is 100 nm-700 nm.
2. The method for preparing a U-W-N ternary film according to claim 1, wherein the preparation method of a U-W-N ternary film is performed by the following steps: adopting a direct-current reaction magnetron sputtering codeposition method, using Ar as a protective gas and N2Performing magnetron sputtering deposition on a U target and a W target through a direct current power supply as reaction gas to obtain a U-W-N ternary film, wherein the purity of the U target is more than 99 percent, the purity of the W target is more than 99.99 percent, the purity of Ar is more than 99.9999 percent, and the purity of N is more than 99 percent2The purity of (A) is more than 99.9999%.
3. The method for preparing the U-W-N ternary film according to claim 2, wherein the specific process of the direct current reactive magnetron sputtering codeposition method is as follows:
firstly, mounting 1-9 mandrels on a rotary support table, adjusting the distance between a U target and the center of the mandrel to be 10-20 cm, and forming an included angle of 45 degrees between the normal line of the center of the U target and the plane of the mandrel; adjusting the distance between the W target and the center of the mandrel to be 10-20 cm, wherein the central normal of the surface of the W target forms an included angle of 45 degrees with the plane of the mandrel; the U target and the W target are symmetrically distributed with the normal of the plane of the mandrel;
secondly, the vacuum degree of the deposition chamber reaches 1 x 10 by using a mechanical pump and molecular pump to pump vacuum-8Pa～1×10-6Pa, then filling protective gas and reaction gas, wherein the gas flow ratio of the protective gas to the reaction gas is 20 (1-5), and adjusting a gate valve to maintain the vacuum degree of the deposition chamber at 0.1 Pa-1 Pa;
etching the surface of the mandrel for 3-20 min by utilizing ion beams, and rotating the support table at the rotating speed of 1-30 rpm in the etching process;
fourthly, baffles are respectively arranged between the U target and the mandrel and between the W target and the mandrel, and pre-sputtering is carried out for 10-20 min under the condition that the power of the U target direct current power supply is 20-400W and the power of the W target direct current power supply is 20-400W;
fifthly, opening baffles between the U target and the mandrel and between the W target and the mandrel, depositing until the thickness of the U-W-N ternary film is 100 nm-700 nm when the power of the U target direct current power supply is 20W-400W and the power of the W target direct current power supply is 20W-400W, and rotating the rotary support table at the rotating speed of 1 rpm-30 rpm in the deposition process to finish the preparation of the U-W-N ternary film on the surface of the mandrel by using a direct-current reactive magnetron sputtering codeposition method.
4. The method according to claim 3, wherein the flow rate of the shielding gas in step two is 20 sccm.
5. The method for preparing a U-W-N ternary film according to claim 3, wherein in the third step, the surface of the mandrel is etched by using an ion beam for 3min to 20min under the conditions that the ion energy is 50eV to 500eV and the ion beam current is 5mA to 100 mA.
6. The use of a ternary U-W-N film according to claim 1, wherein the ternary U-W-N film is used as a diffusion/shielding layer on a black cavity.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113215532A (en) * | 2021-05-12 | 2021-08-06 | 中国工程物理研究院激光聚变研究中心 | Preparation method of low-density gold conversion layer on inner wall of black cavity |
| CN115449764A (en) * | 2022-09-14 | 2022-12-09 | 中国工程物理研究院材料研究所 | Actinide alloy gradient film and preparation method thereof |
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| CN115449764B (en) * | 2022-09-14 | 2023-09-01 | 中国工程物理研究院材料研究所 | Actinide alloy gradient film and preparation method thereof |
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