CN100432287C - Process for preparing diamond film under strong magnetic field - Google Patents
Process for preparing diamond film under strong magnetic field Download PDFInfo
- Publication number
- CN100432287C CN100432287C CNB2006100292429A CN200610029242A CN100432287C CN 100432287 C CN100432287 C CN 100432287C CN B2006100292429 A CNB2006100292429 A CN B2006100292429A CN 200610029242 A CN200610029242 A CN 200610029242A CN 100432287 C CN100432287 C CN 100432287C
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- acetone
- diamond film
- growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a diamond thin-film preparation method under strong magnetic field. It contains making preprocessing to substrate, then putting in vacuum reaction chamber of CVD device having superconducting magnet coil hot filament, filling in hydrogen and acetone, through hydrogen plasma cleaning, case carbonizing, biasing enhancing nucleation and growing four processes to obtain high quality height orient diamond film, 1-14 T strong magnetic field being applied to the latest two processes.
Description
Technical field
The present invention relates to a kind of preparation method of diamond film under strong magnetic field, belong to the thin film technique field.
Background technology
The chemical vapor deposition (CVD) diamond thin has very wide application prospect in modern high-tech field, and the preparation of diamond thin has become one of focus of domestic and international Materials science research with application.Diamond has been carried out a series of research at aspects such as electronics, optics, calorifics, acoustics, mechanics and ultraviolet and particle detectors at present, and obtained very big achievement, but still have simultaneously many problems of further solving of remaining, wherein the most outstanding is further improves quality of diamond film, improve surface smoothness, reduce growth temperature, obtain " accurate monocrystalline " texture diamond thin of crystal grain high orientation.
The method of synthetic CVD diamond thin mainly contains: multiple CVD methods such as heated filament, microwave plasma, direct-current plasma, radio-frequency plasma, electron cyclotron resonace, flame.Different preparation methods, its essence mainly realize the activation and the disassociation of reactants such as carbonaceous gas, hydrogen based on means such as high temperature, microwave, highfields, promote the growth of diamond thin.The prepared diamond film surfaceness of aforesaid method is bigger, and up to several microns, higher roughness has limited the application of diamond thin at electronics and optical field.
In recent years, magneticstrength has been subjected to people's extensive attention above the application of the superconducting intense magnetic field of 10T.High-intensity magnetic field can suspend in high-intensity magnetic field as water, plastics lumber etc. so that the nonferromagnetic material also can demonstrate intrinsic magnetic properties because of its powerful magnetization.To act on the macroscopic object different with the general magnetic field, and high-intensity magnetic field can be delivered to high-intensity magnetic energy the atomic scale of material, change the behaviors such as arrangement, coupling and migration of atom, thereby the tissue and the performance of material produced far-reaching influence.High-intensity magnetic field is energy control material form, size, distribution and orientation in crystal growing process or the like in material preparation, thereby influences the weave construction of material, the final novel material that obtains to have premium properties.Place high-intensity magnetic field to carry out the process of thermal filament chemical vapor deposition of diamond film, utilize high-intensity magnetic field to the extremely strong magnetizing force of material, magnetic energy effect and to the Lorentz force of moving charge, the activation and the disassociation of energy intensified response thing, promote the interaction between the reaction particles such as electronics, hydrogen, hydrocarbon active group, make diamond film in nucleation process just according to some direction oriented growths, be that magnetic field just forcibly formed a preferred growth direction before diamond film growth, the nucleation and growth process of influence and control diamond thin.The diamond thin that high-intensity magnetic field uses hot-wire chemical gas-phase deposition (HFCVD) method to prepare down, the quality of film comprises that grain orientation and surface smoothness have obtained obvious improvement, reduces the growth for Thin Film temperature simultaneously, improves growth for Thin Film speed.The height-oriented various performances that improve material effectively of crystalline, thereby shortcoming such as the polycrystalline diamond films crystal boundary that helps to overcome arbitrary orientation is mixed and disorderly, defective is many, surface irregularity, homogeneity are bad.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of diamond film under strong magnetic field.
For achieving the above object, the present invention takes following technical scheme:
A kind of preparation method of diamond film under strong magnetic field mainly adopts the manufacturing of hot-wire chemical gas-phase deposition method, and this method has following processing step:
A. substrate surface is carried out following pre-treatment: dry through acetone, hydrofluoric acid+deionized water, after containing three ultrasonic cleaning of acetone suspension of bortz powder;
B. pretreated substrate is put into the vacuum chamber of the hot-wire chemical gas-phase deposition device that has the superconducting magnet coil, and vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction, and reaction chamber pressure stabilizes to 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, carry out hydrogen plasma original position etching then 0.5～2 hour, surface cementation 0.5～3 hour;
C. by the superconducting magnet coil substrate is applied the high-intensity magnetic field of 1～14T, add subsequently direct-current biasing-100～-400V, strengthened nucleation 0.5～2 hour, reaction chamber pressure is 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, substrate temperature is 400～900 ℃;
D. process of growth is under not biased high-intensity magnetic field condition, to the every growing diamond film of substrate 2 hours, stopping acetone supplying with, film is stopped growing, hydrogen plasma resupplies acetone to film etching 0.5～2 hour, carries out diamond film growth, the parameter that adopts in the process of growth: reaction chamber pressure is 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, substrate temperature is 400～900 ℃, adopts the pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation to grow, and promptly makes the diamond film of high quality high orientation.
The present invention is in the high-intensity magnetic field of 1～14T, adopt hot-wire chemical gas-phase deposition (Hot Filament Chemical VaporDeposition:HFCVD) method growing high-quality high orientation diamond thin, with high-purity hydrogen and analytically pure acetone is reactant gases, adopt tantalum wire as heating source in the experiment, the distance of tantalum wire and substrate remains on 5～10mm.The reaction chamber base vacuum less than 5Pa after, feed reactant gases hydrogen and acetone to 3～5kPa, wherein the percent by volume of acetone in mixed gas remains on 0.5%～5%, and substrate temperature remains between 400 ℃～900 ℃, and magneticstrength is the adjustable 1～14T that remains on continuously.
High-intensity magnetic field can be delivered to high-intensity magnetic energy the atomic scale of material, changes the behaviors such as arrangement, coupling and migration of atom.High-intensity magnetic field is may command material form, size, distribution and orientation in crystal nucleation and process of growth or the like in material preparation, thereby influences the weave construction of material.Utilize high-intensity magnetic field to the extremely strong magnetizing force of material, magnetic energy effect and to the Lorentz force of moving charge, the activation and the disassociation of energy intensified response thing, promote the interaction between the reaction particles such as electronics, hydrogen, hydrocarbon active group, make diamond film in nucleation process just according to some direction oriented growths, be that magnetic field just forcibly formed a preferred growth direction before diamond film growth, the nucleation and growth process of influence and control diamond thin.Reacting activation by the high temperature tantalum wire in high-intensity magnetic field decomposes acetone, and be co-deposited on the base substrate with the form of diamond and graphite, because the speed of atom hydrogen-type corrosion graphite is higher than far away adamantine erosion rate in the reaction atmosphere, therefore the graphite that deposits is met and is preferentially eroded by the atomic hydrogen in the gas phase, and diamond is retained mutually; Simultaneously, because the powerful the action of a magnetic field of high-intensity magnetic field, suitable magneticstrength can effectively be controlled the arrangement of diamond phase carbon atom, makes the film oriented growth, thereby has realized the oriented growth of excellent diamonds film under the high-intensity magnetic field.
Characteristics of the present invention are to adopt the diamond thin of hot-wire chemical gas-phase deposition method depositing high-quality high orientation in high-intensity magnetic field.Under the effect of high-intensity magnetic field, the thick High Quality Diamond Films of deposition＞300 μ m on the indoor substrate of deposition reaction.The present invention obtains high quality high orientation CVD diamond thin by regulating magneticstrength with control crystal grain preferential growth, can overcome the of poor quality and shaggy shortcoming of other method prepared film, be a kind of method of efficient production high quality high orientation CVD diamond film.
The present invention has substantial progress and wide commercial application prospect, can be applicable to fields such as high-frequency high-power surface acoustic wave (SAW) wave filter, Field Emission Display, X-radiation masks plate, field-effect transistor and nuclear radiation detector.Utilize high-intensity magnetic field to obtain nano-crystallization, high orientation and the low-temperature epitaxy of diamond thin easily, be expected to realize the preparation of high quality high orientation diamond thin.
Description of drawings
Fig. 1 is the setting drawing of hot filament CVD under the high-intensity magnetic field (HFCVD).
Each digital code is expressed as follows among the figure:
1. reaction chamber 2. gases 3. acetone 4. thermostatic baths 5. tantalum wires 6. substrates 7. sample benchs 8. thermopairs 9. vacuum pumps 10. reducing valve 11. mass flowmeters 12. mass flowmeters, 13. temperature controller, 14. weather gauge, 15. valve, 16. bell jar, 17. water coolant, 18. biasing devices, 19. superconducting magnet coils.
Embodiment
The present invention is described in detail by embodiment below in conjunction with accompanying drawing.
Embodiment one
After silicon substrate cleans and dries through acetone, hydrofluoric acid and deionized water, acetone+bortz powder ultrasonic pretreatment respectively, put on the sample bench 7 of vacuum reaction chamber 1 of the hot-wire chemical gas-phase deposition device that has superconducting magnet coil 19 shown in Figure 1, the tantalum wire 5 that it is 0.5mm that the top of sample bench 7 is provided with 4 diameters is as heating source, its output rating is adjustable continuously, and peak power is 4000W.High-purity hydrogen in the hydrogen cylinder 2 has two output branch roads, and a gas transmission branch road is that hydrogen passes through directly feeding cvd reactive chamber 1 of mass flowmeter 11, and controlling its flow is 200ml/min; To be hydrogen enter reaction chamber 1 by bubbling bottle 3 and the analytical pure acetone that carries in this bottle through mass flowmeter 12 to another gas transmission branch road.The bubbling bottle 3 that analytical pure acetone is housed places the thermostatic bath 4 of frozen water mixed solution to keep constant temp, and it is 10ml/min that this branch road is controlled its flow.Bottom at reaction chamber connects vacuum pump 9 and pressure loading valve 10, can vacuumize decompression to reaction chamber 1, to keep the stable of reaction chamber 1 air pressure.Thermopair 8 is put sub-substrate 6 belows, and recording the substrate base temperature is 800 ℃, and by temperature controller 13 underlayer temperature is stabilized in ± 10 ℃ between.Tantalum wire 5 remains on about 8mm with the distance of substrate base 6.Vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, heat temperature raising makes its reaction, and reaction chamber pressure stabilizes to 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, carry out hydrogen plasma original position etching then 0.5 hour, surface cementation 1 hour; Apply the high-intensity magnetic field of 1.5T by superconducting magnet coil 19, apply direct-current biasing-100V by 18 pairs of substrates of biasing device subsequently, strengthened nucleation 0.5 hour, reaction chamber pressure is 3.5kPa, C
3H
6O/H
2Be 0.05, substrate temperature is 750 ℃; Process of growth is under not biased high-intensity magnetic field condition, to the every growing diamond film of substrate 2 hours, close the under meter 12 that carries the acetone branch road, do not have carbon source in the reaction chamber and film is stopped growing, hydrogen plasma was to film etching 0.5 hour, and then open the under meter 12 that carries the acetone branch road, carry out diamond film growth.The parameter that adopts in the process of growth: reaction chamber pressure is 4.0kPa, C
3H
6O/H
2Be 0.02, temperature is 800 ℃, adopts the pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation to grow, and promptly makes the diamond film sample of high quality high orientation.Be square by scanning electron microscope and its crystal grain of atomic force microscope test shows and be (100) orientation, crystal boundary is few and neat, and surfaceness is 6.4nm (1 μ m * 1 μ m); Measurement shows that its degree of orientation R is 99.85% through X-ray diffraction, wherein
The ratio I that shows its non-diamond phase character peak and diamond phase character peak through the Raman spectral measurement
Sp2/ I
Sp3Be 0.01, be indicated as the diamond film of high quality high orientation.
Embodiment two
Alumina substrate is dried through acetone, hydrofluoric acid+deionized water, after containing three ultrasonic cleaning of acetone suspension of bortz powder; Put into the vacuum chamber 1 of the hot-wire chemical gas-phase deposition device that has superconducting magnet coil 19 shown in Figure 1 then, vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction; Reaction pressure stabilizes to 3～5kPa; C
3H
6O/H
2Be 0.005～0.05; Pass through hydrogen plasma original position etching then 1 hour, surface cementation 1.5 hours; Apply the high-intensity magnetic field of 4.3T by 19 pairs of substrates of superconducting magnet coil, add direct-current biasing-200V subsequently, strengthened nucleation 1 hour, reaction chamber pressure is 3.8kPa, C
3H
6O/H
2Be 0.03, substrate temperature is 700 ℃; Process of growth is under not biased high-intensity magnetic field condition, and every growing diamond film 2 hours stops acetone and supplies with, film is stopped growing, and hydrogen plasma resupplies acetone to film etching 0.5 hour, carry out diamond film growth, the parameter that adopts in the process of growth: pressure is 4.2kPa, C
3H
6O/H
2Be 0.02, temperature is 850 ℃, adopts the growth pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation, promptly makes high quality high orientation CVD diamond film sample.Its crystal grain is square and is (100) orientation, and surfaceness is 7.2nm (1 μ m * 1 μ m); Degree of orientation R is 99.83%, I
Sp2/ I
Sp3Be 0.014.
Embodiment three
Silicon carbide substrate is dried through acetone, hydrofluoric acid+deionized water, after containing three ultrasonic cleaning of acetone suspension of bortz powder; Put into the vacuum chamber 1 of the hot-wire chemical gas-phase deposition device that has superconducting magnet coil 19 shown in Figure 1 then, vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction; Reaction pressure stabilizes to 3～5kPa; C
3H
6O/H
2Be 0.005～0.05; Pass through hydrogen plasma original position etching then 1.5 hours, surface cementation 2 hours; Apply the high-intensity magnetic field of 6.8T by 19 pairs of substrates of superconducting magnet coil, add direct-current biasing-250V subsequently, strengthened nucleation 1.5 hours, reaction chamber pressure is 3.2kPa, C
3H
6O/H
2Be 0.02, substrate temperature is 800 ℃; Process of growth is under not biased high-intensity magnetic field condition, and every growing diamond film 2 hours stops acetone and supplies with, film is stopped growing, and hydrogen plasma resupplies acetone to film etching 0.5 hour, carry out diamond film growth, the parameter that adopts in the process of growth: pressure is 4.5kPa, C
3H
6O/H
2Be 0.015, temperature is 900 ℃, adopts the growth pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation, promptly makes the diamond film sample.Its crystal grain is square and is (100) orientation, and surfaceness is 8.5nm (1 μ m * 1 μ m); Degree of orientation R is 99.8%, I
Sp2/ I
Sp3Be 0.017.
Embodiment four
The molybdenum substrate is dried through acetone, hydrofluoric acid+deionized water, after containing three ultrasonic cleaning of acetone suspension of bortz powder; Put into the vacuum chamber 1 of the hot-wire chemical gas-phase deposition device that has superconducting magnet coil 19 shown in Figure 1 then, vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction; Reaction pressure stabilizes to 3～5kPa; C
3H
6O/H
2Be 0.005～0.05; Pass through hydrogen plasma original position etching then 1.5 hours, surface cementation 1.5 hours; Apply the high-intensity magnetic field of 10T by 19 pairs of substrates of superconducting magnet coil, add subsequently direct-current biasing-100～-200V, strengthened nucleation 1.5 hours, reaction chamber pressure is 4.5kPa, C
3H
6O/H
2Be 0.015, substrate temperature is 550 ℃; Process of growth is under not biased high-intensity magnetic field condition, and every growing diamond film 2 hours stops acetone and supplies with, film is stopped growing, and hydrogen plasma resupplies acetone to film etching 0.5 hour, carry out diamond film growth, the parameter that adopts in the process of growth: pressure is 3.5kPa, C
3H
6O/H
2Be 0.005, temperature is 600 ℃, adopts the growth pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation, promptly makes the diamond thin sample.Its crystal grain is square and is (100) orientation, and surfaceness is 9.2nm (1 μ m * 1 μ m), and degree of orientation R is 99.78%, I
Sp2/ I
Sp3Be 0.02.
Embodiment five
Quartz substrate is dried through acetone, hydrofluoric acid+deionized water, after containing three ultrasonic cleaning of acetone suspension of bortz powder; Put into the vacuum chamber 1 of the hot-wire chemical gas-phase deposition device that has superconducting magnet coil 19 shown in Figure 1 then, vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction; Reaction pressure stabilizes to 3～5kPa; C
3H
6O/H
2Be 0.005～0.05; Pass through hydrogen plasma original position etching then 2 hours, surface cementation 2.5 hours; Apply the high-intensity magnetic field of 14T by 19 pairs of substrates of superconducting magnet coil, add direct-current biasing-400V subsequently, strengthened nucleation 2 hours, reaction chamber pressure is 4.8kPa, C
3H
6O/H
2Be 0.04, substrate temperature is 400 ℃; Process of growth is under not biased high-intensity magnetic field condition, and every growing diamond film 2 hours stops acetone and supplies with, film is stopped growing, and hydrogen plasma resupplies acetone to film etching 0.5 hour, carry out diamond film growth, the parameter that adopts in the process of growth: pressure is 3.8kPa, C
3H
6O/H
2Be 0.04, temperature is 550 ℃, adopts the growth pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation, promptly makes the diamond thin sample.Its crystal grain is square and is (100) orientation, and surfaceness is 8.5nm (1 μ m * 1 μ m), and degree of orientation R is 99.74%, I
Sp2/ I
Sp3Be 0.017.
Claims (2)
1. the preparation method of a diamond film under strong magnetic field adopts the manufacturing of hot-wire chemical gas-phase deposition method, and this method has following processing step:
A. substrate surface is carried out following pre-treatment: dry through acetone, hydrofluoric acid+deionized water with after containing three ultrasonic cleaning of acetone suspension of bortz powder;
B. pretreated substrate is put into the vacuum chamber of the hot-wire chemical gas-phase deposition device that has the superconducting magnet coil, and vacuum chamber feeds reactant gases hydrogen and acetone after vacuumizing decompression, and heat temperature raising makes its reaction, and reaction chamber pressure stabilizes to 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, carry out hydrogen plasma original position etching then 0.5～2 hour, surface cementation 0.5～3 hour;
C. by the superconducting magnet coil substrate is applied the high-intensity magnetic field of 1～14T, add subsequently direct-current biasing-100～-400V, strengthened nucleation 0.5～2 hour, reaction chamber pressure is 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, substrate temperature is 400～900 ℃;
D. process of growth is under not biased high-intensity magnetic field condition, to the every growing diamond film of substrate 2 hours, stopping acetone supplying with, film is stopped growing, hydrogen plasma resupplies acetone to film etching 0.5～2 hour, carries out diamond film growth, the parameter that adopts in the process of growth: reaction chamber pressure is 3～5kPa, C
3H
6O/H
2Be 0.005～0.05, substrate temperature is 400～900 ℃, adopts the pattern of above-mentioned diamond film growth and hydrogen plasma etching cycle alternation to grow, and promptly makes the diamond film of high quality high orientation.
2. the preparation method of diamond film under strong magnetic field according to claim 1 is characterized in that described substrate is silicon chip, aluminum oxide, silicon carbide, metal molybdenum sheet or quartz plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100292429A CN100432287C (en) | 2006-07-21 | 2006-07-21 | Process for preparing diamond film under strong magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100292429A CN100432287C (en) | 2006-07-21 | 2006-07-21 | Process for preparing diamond film under strong magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1900356A CN1900356A (en) | 2007-01-24 |
| CN100432287C true CN100432287C (en) | 2008-11-12 |
Family
ID=37656335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100292429A Expired - Fee Related CN100432287C (en) | 2006-07-21 | 2006-07-21 | Process for preparing diamond film under strong magnetic field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100432287C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655223A (en) * | 2015-12-28 | 2016-06-08 | 上海集成电路研发中心有限公司 | Magnetic field generating device of plasma etching system |
| CN109957824A (en) * | 2017-12-25 | 2019-07-02 | 深圳先进技术研究院 | Nano diamond array and preparation method thereof |
| CN108914086B (en) * | 2018-07-17 | 2020-05-22 | 武汉工程大学 | Iron-doped diamond diluted magnetic semiconductor and preparation method thereof |
| CN112323041B (en) * | 2020-10-14 | 2022-11-01 | 江苏鑫汉电子材料有限公司 | Gas purification device applied to growth of silicon carbide by HTCVD method |
| CN112030133B (en) * | 2020-11-06 | 2021-03-23 | 上海征世科技有限公司 | Diamond and preparation method and application thereof |
| CN113025990B (en) * | 2021-05-26 | 2021-08-27 | 上海铂世光半导体科技有限公司 | Method for preparing diamond by multi-energy coupling plasma chemical vapor deposition method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355330A (en) * | 2000-11-30 | 2002-06-26 | 黑龙江省光电技术研究所 | Circulating electrons enhanced hot-wire chemical gas-phase deposition process for preparing diamond film |
| JP2002293687A (en) * | 2001-03-29 | 2002-10-09 | Sony Corp | Polycrystalline diamond thin film and method of forming the same, semiconductor device and method of manufacturing the same, apparatus used for implementation of these methods and electrooptic device |
| CN1558711A (en) * | 2004-02-12 | 2004-12-29 | 上海大学 | A manufacturing method of microstrip gas compartment detector substrate |
| CN1632166A (en) * | 2004-12-28 | 2005-06-29 | 北京科技大学 | DC electric arc plasma chemical vapor deposition apparatus and diamond coating method |
-
2006
- 2006-07-21 CN CNB2006100292429A patent/CN100432287C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1355330A (en) * | 2000-11-30 | 2002-06-26 | 黑龙江省光电技术研究所 | Circulating electrons enhanced hot-wire chemical gas-phase deposition process for preparing diamond film |
| JP2002293687A (en) * | 2001-03-29 | 2002-10-09 | Sony Corp | Polycrystalline diamond thin film and method of forming the same, semiconductor device and method of manufacturing the same, apparatus used for implementation of these methods and electrooptic device |
| CN1558711A (en) * | 2004-02-12 | 2004-12-29 | 上海大学 | A manufacturing method of microstrip gas compartment detector substrate |
| CN1632166A (en) * | 2004-12-28 | 2005-06-29 | 北京科技大学 | DC electric arc plasma chemical vapor deposition apparatus and diamond coating method |
Non-Patent Citations (2)
| Title |
|---|
| Influence of intermittently etching on quanlity of CVDdiamondthin films. YANG Kan-cheng, XIA Yi-ben,WANG Lin-jun,etc.Transactions of Nonferrous Metals Society of China,Vol.16 No.2006年第S1期. 2006 |
| Influence of intermittently etching on quanlity of CVDdiamondthin films. YANG Kan-cheng, XIA Yi-ben,WANG Lin-jun,etc.Transactions of Nonferrous Metals Society of China,Vol.16 No.2006年第S1期. 2006 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1900356A (en) | 2007-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100432287C (en) | Process for preparing diamond film under strong magnetic field | |
| US20030138561A1 (en) | Thermal cracking chemical vapor deposition method for synthesizing nano-carbon material | |
| CN104498894B (en) | Preparation method of porous diamond film | |
| CN112877773A (en) | Non-air-flow MPCVD single crystal diamond growth method using solid carbon source | |
| CN108314019B (en) | Preparation method of large-area high-quality graphene film with uniform layer number | |
| JP2007513257A (en) | Free-standing silicon carbide products formed by chemical vapor deposition and methods for manufacturing them | |
| CN102677019A (en) | Motion magnetic field auxiliary-reinforced chemical vapor deposition method and device | |
| US9067797B2 (en) | Methods and systems to produce large particle diamonds | |
| CN206109529U (en) | High power large tracts of land bias voltage microwave plasma diamond films deposition apparatus | |
| CN100412238C (en) | Equipment and process for preparing monocrystalline GaN film material | |
| JPH08151295A (en) | Production of substrate for vapor synthesis of single crystal diamond film | |
| CN108070842A (en) | The method for using MPCVD methods growth single-crystal diamond as carbon source based on hairline | |
| CN1059716C (en) | Method for synthesizing Beta-C3N4 superhard film material using radio-freq chemical gas-phase sedimentation | |
| CN113584458B (en) | Method for preparing diamond film on potassium tantalate niobate crystal by microwave plasma chemical vapor deposition technology | |
| JP3728466B2 (en) | Method for producing single crystal diamond film | |
| JPS63252997A (en) | Production of diamond single crystal | |
| CN113380603B (en) | High-boron-component two-dimensional III-group multi-element nitride mixed crystal and preparation method thereof | |
| JP3728469B2 (en) | Method for forming single crystal diamond film | |
| CN111519186B (en) | Ferromagnetic/graphene epitaxial interface and low-temperature preparation method thereof | |
| KR101335722B1 (en) | Manufacturing method of nanorods by hydrothermal process and thin film formation by atomic layer deposition, nanorods made by the same, and the device comprising the same | |
| JPS60112699A (en) | Manufacture of diamond | |
| TWI447253B (en) | Method of diamond growth | |
| TWI423461B (en) | Apparatus and method for growing a microcrystalline silicon film | |
| JPS63252998A (en) | Hetero-junction structure | |
| CN115676805A (en) | Single-walled carbon nanotube horizontal array and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081112 Termination date: 20110721 |