CN112064111B - A kind of preparation device of large diameter diamond sheet and preparation method thereof - Google Patents
A kind of preparation device of large diameter diamond sheet and preparation method thereof Download PDFInfo
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- CN112064111B CN112064111B CN202010830589.3A CN202010830589A CN112064111B CN 112064111 B CN112064111 B CN 112064111B CN 202010830589 A CN202010830589 A CN 202010830589A CN 112064111 B CN112064111 B CN 112064111B
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 165
- 239000010432 diamond Substances 0.000 title claims abstract description 165
- 238000002360 preparation method Methods 0.000 title abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 238000001514 detection method Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005192 partition Methods 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- 229910002804 graphite Inorganic materials 0.000 claims description 29
- 239000010439 graphite Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000523 sample Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000012010 growth Effects 0.000 abstract description 15
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000003786 synthesis reaction Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 97
- 238000009434 installation Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及晶体合成技术领域，尤指一种大直径金刚石片的制备装置及其制备方法，该装置包括包括壳体、直径检测单元、升降式旋转支架和掩膜单元，壳体通过狭缝隔板分成上腔室和下腔室，上腔室内设有微波等离子体；本发明的方法通过升降式旋转支架带动金刚石圆片转动及升降，金刚石圆片一部分穿过狭缝隔板暴露在微波等离子体中，掩膜单元在金刚石圆片上涂布掩膜，抑制金刚石圆片的轴向生长，使得金刚石圆片只沿着径向旋转生长，从而生长出大直径金刚石圆片；并且根据直径检测单元的反馈，随着金刚石圆片直径生长变大，升降式旋转支架逐步降低，维持金刚石圆片的顶部高度不变，以便在微波等离子体下形成稳定的生长环境。
The invention relates to the technical field of crystal synthesis, in particular to a preparation device for large-diameter diamond sheets and a preparation method thereof. The device comprises a casing, a diameter detection unit, a lift-type rotating support and a mask unit. The plate is divided into an upper chamber and a lower chamber, and microwave plasma is arranged in the upper chamber; the method of the present invention drives the diamond disc to rotate and lift through a lift-type rotating support, and a part of the diamond disc passes through the slit partition and is exposed to the microwave plasma In the body, the mask unit coats a mask on the diamond disc to suppress the axial growth of the diamond disc, so that the diamond disc only rotates and grows along the radial direction, thereby growing a large-diameter diamond disc; and according to the diameter detection unit As the diameter of the diamond disc grows larger, the lift-type rotating support is gradually lowered to maintain the top height of the diamond disc unchanged, so as to form a stable growth environment under the microwave plasma.
Description
Technical Field
The invention relates to the technical field of crystal synthesis, in particular to a preparation device and a preparation method for growing a large-diameter diamond sheet by adopting a microwave plasma chemical vapor deposition method.
Background
The single crystal diamond has excellent physical and chemical properties, and especially has important application value in the fields of optical windows, heat dissipation, electronic devices and the like, and in order to expand the application, a large-area diamond sheet needs to be prepared. Among various diamond preparation methods, the microwave plasma chemical vapor deposition method is the preferred method for preparing high-quality diamond due to the characteristics of high plasma power density, no electrode discharge pollution, stable performance and the like. In the process of producing large-area single crystal diamond by the current method, diamond seed crystals are generally fixed on a deposition table, mosaic splicing is adopted, the temperature of the seed crystals is controlled by cooling the deposition table, unidirectional growth is carried out on the side of the seed crystals facing to plasma, and then the single crystals are peeled layer by adopting ion implantation. Because mosaic splicing needs to select seed crystals with the same crystal orientation, splicing difficulty is high, ion implantation stripping is adopted after growth, equipment is expensive, and stripping difficulty is high.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation device and a preparation method of a large-diameter diamond wafer, which can directly grow large-diameter wafer single crystal diamond and avoid the splicing growth, cutting and stripping process steps in the existing preparation process of large-area single crystal diamond.
In order to achieve the purpose, the invention adopts the technical scheme that the device and the method for preparing the large-diameter diamond sheet are adopted;
wherein, a preparation facilities of major diameter diamond piece includes:
the microwave plasma generator comprises a shell, a microwave plasma generator and a power supply, wherein a slit partition plate is arranged inside the shell;
a slit barrier dividing the housing into an upper chamber and a lower chamber, the microwave plasma being disposed in the upper chamber; the slit clapboard is provided with at least one through hole for the diamond wafer to pass through;
the diameter detection unit is arranged in the lower cavity and used for detecting the diameter of the diamond wafer;
the lifting type rotating support is arranged in the lower cavity and used for fixing the diamond wafer, and the position height of the diamond wafer is adjusted according to the detection result of the diameter detection unit; and
and the mask unit is arranged in the lower cavity, is used for coating a mask on the diamond wafer and is linked with the diamond wafer.
As a preferable scheme, the lifting type rotating support comprises a lifting rod device, a rotating motor and a rotating shaft, the rotating motor is installed at the top end of the lifting rod device, and the rotating shaft is in driving connection with the rotating motor.
Preferably, a water cooling jacket is arranged inside the rotating shaft.
Preferably, the rotating shaft is provided with mounting positions for fixing the diamond discs, and the number of the mounting positions is at least one.
As a preferable scheme, the mask unit comprises a first moving device and at least one group of graphite mask group, the graphite mask group is in driving connection with the first moving device, and the first moving device drives the graphite mask group to be in linkage with the diamond wafer along the radial direction.
As a preferred scheme, the graphite mask group comprises two graphite rods and two springs, the two graphite rods are symmetrically clamped on two sides of the diamond wafer, and the graphite rods are connected with the first moving device through the springs.
Preferably, the diameter detection unit comprises a second moving device and a diameter probe, the diameter probe is in driving connection with the second moving device, and the second moving device drives the diameter probe to be linked with the diamond wafer in the radial direction.
The preparation method of the large-diameter diamond sheet comprises the following steps:
step one, sticking and clamping the diamond wafer seed crystal on a lifting rotary support, and simultaneously enabling the edge of the diamond wafer seed crystal to enter an upper chamber through a through hole of a slit clapboard;
driving the diamond wafer seed crystal to rotate in the vertical direction through the lifting type rotating support, and continuously coating a mask on the diamond wafer seed crystal by the mask unit;
step three, the diameter detection unit detects the diameter of the diamond wafer seed crystal growing for a period of time;
fourthly, controlling the height position of the diamond wafer seed crystal by the lifting type rotating support according to the diameter detection result;
step five, the mask unit and the diameter detection unit are linked with the diamond wafer seed crystal, and the relative positions are kept unchanged;
and continuously circulating the second step to the fifth step, wherein the diamond wafer seed crystal grows only along the radial direction, so that the large-diameter diamond wafer is prepared.
Preferably, in the step four, the elevation type rotating bracket controls the height position of the diamond wafer seed crystal according to the diameter detection result, and the height of the top point of the diamond wafer seed crystal is kept constant.
Preferably, in the process of the circulation steps two to five, if the diameter detection unit in the step three detects the diameter of the diamond wafer seed crystal growing for a period of time, the circulation is stopped when the diameter detection unit detects that the diameter of the diamond wafer seed crystal is a set value.
The invention has the beneficial effects that:
the device drives the diamond wafer to rotate and lift through the lifting type rotating support, one part of the diamond wafer passes through the slit partition plate and is exposed in the microwave plasma, the mask unit coats the mask on the diamond wafer to inhibit the axial growth of the diamond wafer, so that the diamond wafer only rotates and grows along the radial direction, and the large-diameter diamond wafer is grown; according to the feedback of the diameter detection unit, the lifting type rotating support is gradually lowered along with the growth of the diameter of the diamond wafer, and the height of the top of the diamond wafer is kept unchanged, so that a stable growth environment is formed under the microwave plasma;
compared with the prior art, the preparation method of the invention can directly grow the large-diameter monocrystal diamond wafer without precise and complicated splicing, cutting or stripping technology; the process equipment is simple, the industrial preparation production is met, in the process of preparing the large-diameter diamond wafer, the diamond wafer is erected, the side face of the top of the diamond wafer is exposed in microwave plasma, meanwhile, the diamond wafer can obtain equal growth opportunities in all directions under the rotating action of the lifting type rotating support, crystals can grow in two-dimensional directions in a balanced mode, the large-diameter single crystal diamond wafer can be obtained, the preparation efficiency is high, and the quality of the prepared diamond is good.
Drawings
Fig. 1 is a schematic structural view of a device for manufacturing a large-diameter diamond wafer according to the present invention.
Fig. 2 is a schematic structural view of a first embodiment of the apparatus for producing a large-diameter diamond wafer according to the present invention.
Fig. 3 is a schematic structural view of a second embodiment of the large-diameter diamond wafer manufacturing apparatus of the present invention.
Fig. 4 is a process flow diagram of a method of making large diameter diamond chips according to the present invention.
The reference numbers illustrate: 10-a housing; 11-a slit divider; 12-an upper chamber; 13-a lower chamber; 14-microwave plasma; 15-a through hole; 20-lifting type rotating support; 21-a lifter device; 22-a rotating electrical machine; 23-a rotating shaft; 30-diameter detection unit; 40-a mask unit; 50-diamond disk.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 to 3, the present invention relates to a device for preparing a large-diameter diamond wafer, including a housing 10, a slit partition 11, a lifting rotating bracket 20, a diameter detecting unit 30, and a mask unit 40, wherein the slit partition 11 divides the housing 10 into an upper chamber 12 and a lower chamber 13, the upper chamber 12 is provided with a microwave plasma 14, and the lifting rotating bracket 20, the diameter detecting unit 30, and the mask unit 40 are installed in the lower chamber 13; wherein, the slit clapboard 11 is provided with at least one through hole 15 for the diamond wafer 50 to pass through; the diameter detection unit 30 is used for detecting the diameter of the diamond wafer 50, the mask unit 40 is used for coating a mask on the diamond wafer 50, and both the mask unit 40 and the diameter detection unit 30 are linked with the diamond wafer 50; the lifting type rotating bracket 20 is used for fixing the diamond wafer 50, and the position height of the diamond wafer 50 is adjusted according to the detection result of the diameter detection unit 30.
According to the device, the lifting type rotating support 20 drives the diamond wafer 50 to rotate and lift, a part of the diamond wafer 50 penetrates through the slit partition plate 11 and is exposed in the microwave plasma 14, the mask unit 40 coats the mask on the diamond wafer 50 to inhibit the axial growth of the diamond wafer 50, so that the diamond wafer 50 only rotates and grows in the radial direction, and the large-diameter diamond wafer 50 is grown; and according to the feedback of the diameter detection unit 30, as the diameter of the diamond wafer 50 grows larger, the lifting type rotating bracket 20 is gradually lowered, and the top height of the diamond wafer 50 is maintained unchanged, so that a stable growth environment is formed under the microwave plasma 14.
Since the diamond wafer 50 is continuously and radially grown, the length and width of the through hole 15 of the slit partition 11 are required to ensure the growth requirement of the diamond wafer 50, and the preferred length and width of the through hole 15 are 100mm and 1 mm.
The diameter detection unit 30 comprises a second moving device (not shown in the figure) and a diameter probe (not shown in the figure), the diameter probe is in driving connection with the second moving device, the second moving device drives the diameter probe to be linked with the diamond wafer 50 along the radial direction, the diameter of the diamond wafer 50 is measured in real time through the diameter probe, the diameter probe is realized by a light emitting diode (not shown in the figure) and a photoresistor (not shown in the figure) which are arranged in pairs, and the light emitting diode and the photoresistor are respectively arranged on two sides of the diamond wafer 50; when the diameter of the diamond wafer 50 is large and light of the light emitting diode is shielded, the photoresistor is conducted, a signal is given to enable the height of the lifting type rotating support 20 to be reduced, the light emitting diode and the photoresistor on the diameter probe are enabled to move outwards synchronously along the radial direction of the diamond wafer 50 through the second moving device, when the light of the light emitting diode is received by the photoresistor again, the action of the lifting type rotating support 20 is stopped, and the reciprocating operation is carried out, so that the top point height of the diamond wafer 50 is kept unchanged.
The lifting type rotating support 20 comprises a lifting rod device 21, a rotating motor 22 and a rotating shaft 23, wherein the rotating motor 22 is installed at the top end of the lifting rod device 21, the rotating shaft 23 is in driving connection with the rotating motor 22, the rotating shaft 23 is perpendicular to the lifting rod device 21, the rotating shaft 23 is provided with an installation position for fixing a diamond wafer 50, and the diamond wafer 50 is mainly connected and fixed with the installation position in a bonding mode. The lifting rod device 21 adopts an electric lifting rod and is electrically connected with the diameter detection unit 30, the height of the lifting rod device 21 can be automatically adjusted according to the diameter result detected by the diameter detection unit 30, and then the height position of the rotating shaft 23 is adjusted, so that the top height of the diamond wafer 50 is not changed. In order to grow a product with better quality, a water cooling jacket (not shown in the figure) is arranged inside the rotating shaft 23, and the temperature of the diamond disc 50 is regulated by regulating the temperature or flow rate of cooling water in the water cooling jacket, so that the product with better quality can be grown.
In order to improve the yield, the large-diameter diamond wafer manufacturing apparatus of the present invention may simultaneously grow a plurality of diamond wafers, and at least one through hole 15 is formed in the slit partition 11, and in addition, the number of mounting positions of the rotation shaft (i.e., the number of the mounting positions is at least one) may be increased at a position corresponding to the through hole 15, or the number of the lifting type rotation brackets 20 (i.e., the number of the lifting type rotation brackets is at least one) may be directly increased, or the number of the mounting positions and the number of the lifting type rotation brackets 20 may be simultaneously increased, which is not described herein again.
In order to adapt to the lifting type rotating support 20 with a plurality of installation positions, the mask unit 40 comprises a first moving device (not shown in the figure) and at least one group of graphite mask groups (not shown in the figure), the graphite mask groups are in driving connection with the first moving device, the first moving device drives the graphite mask groups to be linked with the diamond wafer 50 along the radial direction, and each group of graphite mask groups corresponds to one diamond wafer 50; specifically, the graphite mask set includes two graphite rods (not shown in the figure) and two springs (not shown in the figure), the two graphite rods are symmetrically clamped on two sides of the diamond wafer 50, and the graphite rods are connected with the first moving device through the springs. The graphite mask group presses two graphite rods in pairs on two sides of the edge of the diamond wafer 50 through two springs (the structure principle is the same as that of a carbon brush inside a direct current motor), the task of coating the mask is naturally completed when the diamond wafer 50 rotates, and the graphite rods synchronously move outwards under the control of the lifting rods along with the growth of the diamond wafer 50, so that the coating of the annular area of the edge of the circular surface is always kept.
If the number of the lifting type rotating supports 20 is increased to increase production, the number of the mask units 40 and the number of the diameter detection units 30 are correspondingly increased, and the number of the mask units 40 and the number of the diameter detection units 30 are always consistent with the number of the lifting type rotating supports 20.
The apparatus for producing a large-diameter diamond wafer according to the present invention will be further described with reference to the following examples and the accompanying drawings.
First embodiment
The embodiment provides a simple-based preparation device for large-diameter diamond chips, which comprises a shell 10, a slit partition plate 11, a lifting type rotating support 20, a diameter detection unit 30 and a mask unit 40, wherein the slit partition plate 11 is provided with a through hole 15 through which a diamond wafer 50 can pass, the lifting type rotating support 20 comprises a lifting rod device 21, a rotating motor 22 and a rotating shaft 23, the rotating shaft 23 is provided with an installation position, the diamond wafer 50 is bonded on the installation position, the mask unit 40 comprises a group of graphite mask groups, and the graphite mask groups are clamped on two sides of the diamond wafer 50.
Second embodiment
The embodiment provides a preparation facilities that can produce a plurality of major diameter diamond pieces simultaneously, which comprises a housin 10, slit baffle 11, a over-and-under type runing rest 20, a diameter detecting element 30 and a mask unit 40, slit baffle 11 sets up three through-hole 15 that can supply diamond disk 50 to pass, over-and-under type runing rest 20 includes lifter device 21, rotating electrical machines 22 and rotation axis 23, rotation axis 23 is provided with three installation position, three diamond disk 50 corresponds respectively and bonds in the installation position, mask unit 40 includes three graphite mask group of group, three graphite mask of group centre gripping respectively in the both sides of diamond disk 50 that correspond. The present embodiment increases the number of growths by increasing the number of mounting positions of the rotary shaft 23.
Referring to fig. 4, the present invention relates to a method for preparing a large-diameter diamond plate, including the following steps:
s10, adhering and clamping the diamond wafer seed crystals on the lifting rotary support, and simultaneously enabling the edges of the diamond wafer seed crystals to enter the upper chamber through the through holes of the slit partition plate;
s20, driving the diamond wafer seed crystal to rotate in the vertical direction through the lifting rotating support, and continuously coating a mask on the diamond wafer seed crystal by the mask unit;
s30, the diameter detection unit detects the diameter of the diamond wafer seed crystal growing for a period of time;
s40, controlling the height position of the diamond wafer seed crystal by the lifting type rotating support according to the diameter detection result;
s50, the mask unit and the diameter detection unit are linked with the diamond wafer seed crystal, the relative position is kept unchanged, and the top height of the top end of the diamond wafer seed crystal is kept unchanged;
and continuously circulating the steps S20 to S50, growing the diamond wafer seed crystal only along the radial direction until a large-diameter diamond wafer is prepared, namely stopping circulation when the diameter detection unit detects that the diameter of the diamond wafer seed crystal is a set value in the diameter detection unit of the step S30 when the diameter detection unit detects that the diameter of the diamond wafer seed crystal is the set value. This setting is here smaller than the length of the through-hole, i.e. less than 100 mm.
Compared with the prior art, the preparation method of the invention can directly grow the large-diameter monocrystal diamond wafer without precise and complicated splicing, cutting or stripping technology; the process equipment is simple, the industrial preparation production is met, in the process of preparing the large-diameter diamond wafer, the diamond wafer is erected, the side face of the top of the diamond wafer is exposed in microwave plasma, meanwhile, the diamond wafer can obtain equal growth opportunities in all directions under the rotating action of the lifting type rotating support, crystals can grow in two-dimensional directions in a balanced mode, the large-diameter single crystal diamond wafer can be obtained, the preparation efficiency is high, and the quality of the prepared diamond is good.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and not restrictive, and various changes and modifications to the technical solutions of the present invention may be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are intended to fall within the scope of the present invention defined by the appended claims.
Claims (10)
1. A device for manufacturing a large-diameter diamond wafer, comprising:
the microwave plasma generator comprises a shell, a microwave plasma generator and a power supply, wherein a slit partition plate is arranged inside the shell;
a slit barrier dividing the housing into an upper chamber and a lower chamber, the microwave plasma being disposed in the upper chamber; the slit clapboard is provided with at least one through hole for the diamond wafer to pass through;
the diameter detection unit is arranged in the lower cavity and used for detecting the diameter of the diamond wafer;
the lifting type rotating support is arranged in the lower cavity and used for fixing the diamond wafer, and the position height of the diamond wafer is adjusted according to the detection result of the diameter detection unit; and
and the mask unit is arranged in the lower cavity, is used for coating a mask on the diamond wafer and is linked with the diamond wafer.
2. The manufacturing apparatus of a large-diameter diamond wafer according to claim 1, wherein: the lifting type rotating support comprises a lifting rod device, a rotating motor and a rotating shaft, wherein the rotating motor is installed at the top end of the lifting rod device, and the rotating shaft is in driving connection with the rotating motor.
3. The manufacturing apparatus of a large-diameter diamond wafer according to claim 2, wherein: and a water cooling jacket is arranged in the rotating shaft.
4. The manufacturing apparatus of a large-diameter diamond wafer according to claim 3, wherein: the rotating shaft is provided with at least one mounting position for fixing the diamond wafer.
5. A manufacturing apparatus of a large-diameter diamond wafer according to claim 4, wherein: the mask unit comprises a first moving device and at least one group of graphite mask group, the graphite mask group is in driving connection with the first moving device, and the first moving device drives the graphite mask group to be linked with the diamond wafer along the radial direction.
6. The manufacturing apparatus of a large-diameter diamond wafer according to claim 5, wherein: the graphite mask group comprises two graphite rods and two springs, the two graphite rods are symmetrically clamped on two sides of the diamond wafer, and the graphite rods are connected with the first moving device through the springs.
7. The manufacturing apparatus of a large-diameter diamond wafer according to claim 1, wherein: the diameter detection unit comprises a second moving device and a diameter probe, the diameter probe is in driving connection with the second moving device, and the second moving device drives the diameter probe to be in linkage with the diamond wafer along the radial direction.
8. A method for manufacturing a large-diameter diamond wafer, which is performed based on the apparatus for manufacturing a large-diameter diamond wafer according to any one of claims 1 to 7, comprising the steps of:
step one, sticking and clamping the diamond wafer seed crystal on a lifting rotary support, and simultaneously enabling the edge of the diamond wafer seed crystal to enter an upper chamber through a through hole of a slit clapboard;
driving the diamond wafer seed crystal to rotate in the vertical direction through the lifting type rotating support, and continuously coating a mask on the diamond wafer seed crystal by the mask unit;
step three, the diameter detection unit detects the diameter of the diamond wafer seed crystal growing for a period of time;
fourthly, controlling the height position of the diamond wafer seed crystal by the lifting type rotating support according to the diameter detection result;
step five, the mask unit and the diameter detection unit are linked with the diamond wafer seed crystal, and the relative positions are kept unchanged;
and (5) circulating the step two to the step five, and growing the diamond wafer seed crystals only along the radial direction until the large-diameter diamond wafer is prepared.
9. A method for producing a large-diameter diamond wafer according to claim 8, characterized in that: and C, in the lifting type rotating support controlling the height position of the diamond wafer seed crystal according to the diameter detection result, the top point height of the top end of the diamond wafer seed crystal is kept unchanged.
10. A method for producing a large-diameter diamond wafer according to claim 8, characterized in that: in the process of the circulation steps two to five, if the diameter detection unit in the step three detects the diameter of the diamond wafer seed crystal growing for a period of time, and when the diameter detection unit detects that the diameter of the diamond wafer seed crystal is a set value, the circulation is stopped.
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| CN112871717B (en) * | 2021-03-24 | 2022-10-25 | 长春理工大学 | High-precision sorting device and method for steel ball diameter |
| CN113584580B (en) * | 2021-08-05 | 2022-08-19 | 北京大学东莞光电研究院 | Radial growth method and device for diamond wafer |
| CN115976490B (en) * | 2022-12-06 | 2023-12-19 | 上海铂世光半导体科技有限公司 | Online CVD diamond growth detection device |
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