CN113584580B - Radial growth method and device for diamond wafer - Google Patents
Radial growth method and device for diamond wafer Download PDFInfo
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- CN113584580B CN113584580B CN202110895167.9A CN202110895167A CN113584580B CN 113584580 B CN113584580 B CN 113584580B CN 202110895167 A CN202110895167 A CN 202110895167A CN 113584580 B CN113584580 B CN 113584580B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of crystal synthesis, in particular to a radial growth method and a radial growth device for a diamond wafer, which comprise a lifting type rotating bracket and a wafer clamping unit; the lifting type rotating support comprises a lifting rod device, a cross frame, a distance adjusting assembly, a rotating driving assembly and at least two groups of rotating shafts which are arranged in parallel; according to the growth method, a plurality of diamond wafers are coaxially clamped into a columnar shape through a wafer clamping unit and then are arranged on a lifting type rotating support, the lifting type rotating support drives the diamond wafers to rotate, lift and play, under the action of gap control, the side faces of the diamond wafers are exposed in plasma excited by process gas, the diamond wafers are only radially and rotatably grown along the side faces, the large-diameter diamond wafers are grown, the thickness of the diamond wafers is kept through the wafer clamping unit, and the roundness of the diamond wafers is kept through grinding of a rotating shaft.
Description
Technical Field
The invention relates to the technical field of crystal synthesis, in particular to a radial growth method and a radial growth device for a diamond wafer.
Background
The single crystal diamond has excellent physical and chemical properties, and especially has important application value in the fields of optical windows, heat dissipation, electronic devices and the like. To expand these applications, large area diamond wafers need to be prepared.
Among various diamond preparation methods, the microwave plasma chemical vapor deposition method is the preferred method for preparing high-quality diamond due to the characteristics of high plasma power density, no electrode discharge pollution, stable performance and the like. In the process of producing large-area monocrystal diamond by the current method, the diamond seed crystals are generally fixed on a deposition table, mosaic splicing is adopted, the temperature of the seed crystals is controlled by cooling the deposition table, unidirectional growth is carried out on one surface of the seed crystals, which faces to plasma, and then the single crystals are peeled layer by adopting ion implantation. Because the mosaic splicing needs to select the seed crystals with the same crystal orientation, the splicing difficulty is high, the seed crystals need to be copied after growing up and are stripped by adopting ion implantation, the equipment is expensive, and the stripping difficulty is high.
The prior art also discloses a preparation method of a large-diameter diamond sheet, but the method has difficulty in controlling the roundness and the thickness of a wafer in the continuous long-period growth process.
Disclosure of Invention
In order to solve the problems, the invention provides a radial growth method and a radial growth device for a diamond wafer, which can directly grow a large-diameter diamond wafer and can well keep the roundness and the thickness of the diamond wafer in the long-period growth process.
In order to achieve the purpose, the invention adopts the technical scheme that a radial growth method of a diamond wafer is provided, and comprises the following steps:
clamping a diamond wafer on a wafer clamping unit;
placing the wafer clamping unit clamped with the diamond wafer on a rotating shaft of the rotating bracket, so that the axis of the wafer clamping unit is parallel to the axis of the rotating shaft;
thirdly, the rotary driving assembly drives the rotary shaft to rotate, and the diamond wafer is driven to rotate reversely by the friction force between the rotary shaft and the side face of the diamond wafer;
step four, starting a chemical vapor deposition process to enable the diamond wafer to grow in a proper process atmosphere;
step five, adjusting the rotating speed, the height and the distance of the rotating shaft according to the growth state of the diamond wafer, so that the diamond wafer grows in a set process atmosphere;
and step five is continuously circulated, and the growth process is stopped when the diamond wafer grows to the set diameter.
In order to obtain the preparation method, the invention also provides a radial growth device for the diamond wafer, which comprises a lifting type rotating support and a wafer clamping unit; the lifting type rotating support comprises a lifting rod device, a cross frame, a distance adjusting assembly, a rotating driving assembly and at least two groups of rotating shafts arranged in parallel; the transverse frame is arranged at the top of the lifting rod device; the distance adjusting assembly is arranged on the transverse frame and is used for adjusting the distance between two adjacent wafer clamping units; the rotary driving assembly is arranged on the distance adjusting assembly and is in driving connection with the rotary shaft; the wafer clamping unit is used for coaxially clamping a plurality of diamond wafers into a cylindrical shape and is placed between the two rotating shafts.
Preferably, a water cooling jacket is arranged inside the rotating shaft.
As a preferred scheme, the distance adjusting assembly is an electric adjusting assembly, and the electric adjusting assembly comprises a guide rail mounted on the cross frame, a plurality of slide blocks mounted on the guide rail, a transmission rod and a stepping motor; one end of the transmission rod is connected with the sliding block, and the other end of the transmission rod is connected with an output shaft of the stepping motor; the rotary drive assembly is mounted on the slide.
As a preferable scheme, the distance adjusting assembly is a manual adjusting assembly, the manual adjusting assembly comprises a mounting seat and a lock nut, the rotary driving assembly is mounted on the mounting seat, and a threaded column is arranged on one surface of the mounting seat, which faces away from the rotary driving assembly; the crossbearer is provided with a strip-shaped hole along the extension direction of the crossbearer, the threaded column penetrates through the strip-shaped hole and is screwed up and fixed through the locking nut.
As a preferable scheme, the wafer clamping unit comprises a bolt and a nut, the bolt coaxially penetrates through a plurality of diamond wafers, and the diamond wafers are clamped and locked through the nut; the bolt with the diamond disk is placed between the two rotating shafts and is arranged coaxially with the rotating shafts.
As a preferable scheme, the wafer clamping unit further comprises a spring, and the spring and the diamond wafer penetrate through the bolt and are clamped and locked by a nut.
As a preferable scheme, the wafer clamping unit comprises a bolt, a U-shaped clamping arm and a chuck for coaxially overlapping and clamping a plurality of diamond wafers, two ends of the chuck are respectively connected with two sides of an opening at the upper end of the U-shaped clamping arm, and the U-shaped clamping arm is in threaded connection with the bolt; the chuck containing the diamond disk is placed between the two rotating shafts and is arranged coaxially with the rotating shafts.
As a preferred scheme, the U-shaped supporting arm comprises a first supporting arm and a second supporting arm, a limiting column is arranged at the lower end of the first supporting arm, a limiting hole for the limiting column to insert into is formed in the lower end of the second supporting arm, and the bolt extends into the limiting hole to be in threaded connection with the limiting column.
As a preferable scheme, the wafer clamping unit further comprises a spring, the spring and the diamond wafer penetrate through the bolt and are clamped and locked through a nut, and the spring penetrates through the bolt and abuts against the second support arm.
The invention has the beneficial effects that:
1. compared with the prior art, the preparation method of the invention can directly grow the large-diameter monocrystal diamond wafer without precise and complicated splicing, cutting and stripping technologies and on-line mask coating technologies;
2. the process equipment is simple, the industrial preparation production is met, and in the process of preparing the large-diameter diamond wafer, after a plurality of diamond wafers are overlapped and clamped, the side surfaces of the diamond wafers are exposed in the chemical vapor deposition process atmosphere, wherein the outer two wafers are used as auxiliary wafers for protecting the bottom surfaces of the diamond wafers clamped in the middle, so that the diamond wafer in the middle is epitaxially grown only on the side surfaces;
3. under the rotating, lifting and gap control effects of the lifting type rotating support, the diamond wafers can obtain equal growth opportunities in the circumferential direction of the side surface, and the bottom surface is shielded by the adjacent diamond wafers and has no growth opportunities, so that the diamond wafers are only grown on the side surface, the diameter is continuously increased, and the thickness is not changed when the bottom surface is not grown; the friction drive of the rotating shaft on the lifting type rotating support plays a role of cylindrical grinding, so that the side face of the diamond wafer keeps smooth in the growth process. In the growth process of a long period, the purpose of controlling the diameter and the thickness is achieved by grinding the side surface of the rotating shaft and shielding the bottom surface of the adjacent diamond wafer;
4. in addition, a plurality of rotating shafts and a plurality of wafer clamping units can be arranged at the same time, and a plurality of diamond wafers can be clamped for batch growth.
Drawings
Fig. 1 is a schematic structural view of a first embodiment of the diamond wafer radial growth apparatus of the present invention.
Fig. 2 is a schematic structural diagram of the wafer clamping unit in fig. 1.
Fig. 3 is a schematic view of the diamond wafer of fig. 1 after a period of growth.
Fig. 4 is a schematic structural diagram of the wafer clamping unit in fig. 3.
Fig. 5 is a schematic structural view of a second embodiment of the diamond wafer radial growth apparatus of the present invention.
Fig. 6 is a schematic structural diagram of the wafer clamping unit in fig. 5.
The reference numbers indicate: 10. 10 a-lifting type rotating support; 11. 11 a-a lifter device; 12. 12 a-a cross-frame; 13. 13 a-axis of rotation; 20. 20 a-a wafer holding unit; 21. 21 a-bolt; 22-a nut; 23. 23 a-a spring; 24-a chuck; 25-a first support arm; 26-a second support arm; 27-a limiting column; 28-a bearing seat; 30. 30 a-a diamond disk; 40-region of overlap.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are used broadly and can be, for example, a fixed connection, a detachable connection, an integrated connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or a communication between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention relates to a radial growth method of a diamond wafer, which comprises the following steps:
clamping a diamond wafer on a wafer clamping unit;
placing the wafer clamping unit clamped with the diamond wafer on a rotating shaft of the rotating bracket to enable the axis of the wafer clamping unit to be parallel to the axis of the rotating shaft;
thirdly, the rotary driving component drives the rotary shaft to rotate, and the diamond wafer is driven to rotate reversely by the friction force between the rotary shaft and the side face of the diamond wafer;
step four, starting a chemical vapor deposition process to enable the diamond wafer to grow in a proper process atmosphere;
step five, adjusting the rotating speed, the height and the distance of the rotating shaft according to the growth state of the diamond wafer, so that the diamond wafer grows in a set process atmosphere;
and continuously circulating the step five, and stopping the growth process program when the diamond wafer grows to the set diameter.
Compared with the prior art, the preparation method of the invention can directly grow the large-diameter diamond wafer without precise and complicated splicing, cutting and stripping technology and on-line mask coating technology; the process equipment is simple, the industrial preparation production is met, and in the process of preparing the large-diameter diamond wafer, after a plurality of diamond wafers are overlapped and clamped, the side surfaces of the diamond wafers are exposed in the chemical vapor deposition process atmosphere, meanwhile, the diamond wafers can obtain equal growth opportunities in the circumferential direction of the side surfaces under the rotating, lifting and gap control effects of the lifting type rotating support, the bottom surfaces of the diamond wafers are shielded by adjacent diamond wafers, the growth opportunities are avoided, the diamond wafers can grow only on the side surfaces, the diameter of the diamond wafers can be continuously increased, and the thickness of the diamond wafers can be kept unchanged without growing on the bottom surfaces. In the growth process of a long period, the diameter and the thickness of the diamond wafer can be controlled by grinding the side surface of the rotating shaft and shielding the bottom surface of the adjacent diamond wafer.
In the second step, the diamond discs on two adjacent wafer clamping units are overlapped and clamped in a staggered manner. During chemical vapor deposition, the peripheral deposition speed of the wafer is the fastest, the deposition speed is slower in the direction of the center of the circle, and the wafer is basically not deposited any more when reaching a certain depth. Therefore, the overlapping size is controlled to just cover the deposition growth area, and the rest non-overlapping area can not be deposited and grown. In addition, if the deposition growth area is deep to the gap piece of the wafer, the bottom surfaces of the two wafers can be completely overlapped. The non-overlapped bare floor area is allowed to approach zero.
The preparation method of the invention is not only suitable for the process of growing diamond by Microwave Plasma Chemical Vapor Deposition (MPCVD), but also suitable for various processes of growing diamond by Chemical Vapor Deposition (CVD) such as a combustion flame method, a hot wire CVD method, a radio frequency plasma CVD method and the like.
Referring to fig. 1 to 4, a first embodiment of a radial diamond wafer growing apparatus according to the present invention is shown, the radial diamond wafer growing apparatus includes an elevating rotary stand 10 and a wafer clamping unit 20, the elevating rotary stand 10 includes an elevating rod device 11 and at least two sets of rotating shafts 13 arranged in parallel, the rotating shafts 13 are installed at the top end of the elevating rod device 11; the wafer clamping unit 20 is used for coaxially clamping a plurality of diamond wafers 30 into a cylindrical shape, and the wafer clamping unit 20 is placed between the two rotating shafts 13.
The device clamps a plurality of diamond wafers 30 through the wafer clamping unit 20, wherein the outer two diamond wafers are used as auxiliary wafers for protecting the bottom surfaces of the diamond wafers 30 clamped in the middle, so that the diamond wafers 30 in the middle are epitaxially grown only on the side surfaces; and then, the friction drive of the rotating shaft 13 on the lifting type rotating bracket 10 is matched to play a role of cylindrical grinding, so that the side surface of the diamond wafer 30 is kept smooth in the growth process. The number of the wafer clamping units 20 is one set less than the number of the rotation shafts 13, in this embodiment, three sets of the rotation shafts 13 are provided, and two sets of the wafer clamping units 20 are provided, but it is needless to say that a plurality of rotation shafts 13 and a plurality of wafer clamping units 20 may be provided at the same time to clamp a plurality of diamond wafers 30 for batch growth.
The lifting type rotating support 10 further comprises a cross frame 12, a rotating driving assembly and a distance adjusting assembly, wherein the rotating driving assembly and the distance adjusting assembly are installed on the cross frame 12, the cross frame 12 is vertically installed at the top end of the lifting rod device 11, and the distance adjusting assembly is installed on the cross frame 12 and can move on the cross frame 12; the rotary driving component is arranged on the distance adjusting component; the rotating shaft 13 and the rotating driving assembly are arranged on the distance adjusting assembly, and the rotating driving assembly is in driving connection with the rotating shaft 13. The rotation of the rotary shaft 13 is independently controlled; the rotating shaft 13 is driven to rotate by the rotating driving component, and the diamond wafer 30 is driven to rotate reversely by the rotation of the rotating shaft 13, so that the side surface of the diamond wafer 30 is uniformly subjected to chemical vapor deposition.
The distance adjusting assembly can adjust the distance between the rotating shafts 13, and adjust the distance between the adjacent rotating shafts 13 to adjust the distance between the diamond disks 30 in the adjacent wafer clamping units 20 when the diameter of the diamond disks 30 grows gradually, so as to optimize the overlapping area between the bottom surfaces of the diamond disks 30.
The lifting rod device 11 adopts an electric lifting rod, and when the diameter of the diamond wafer 30 grows gradually, the position of the diamond wafer 30 in the chemical vapor deposition chamber can be adjusted by reducing the height of the lifting rod device 11 so as to grow a product with better quality.
The rotating shaft 13 is made of one or a combination of molybdenum, tungsten and ceramic, a water cooling jacket (not shown) is arranged inside the rotating shaft 13, and the temperature of the diamond wafer 30 is regulated and controlled by regulating and controlling the temperature or flow of cooling water in the water cooling jacket, so that a product with better quality can be grown.
In this embodiment, the distance adjusting assembly is an electric adjusting assembly, and the electric adjusting assembly includes a guide rail mounted on the cross frame 12, a plurality of sliders mounted on the guide rail, a transmission rod, and a stepping motor; one end of the transmission rod is connected with the sliding block, and the other end of the transmission rod is connected with an output shaft of the stepping motor; the rotary driving component is arranged on the sliding block. The distance between the rotating shafts 13 can be adjusted through manual or automatic control, for example, an electric adjusting assembly is adopted, and the distance between the rotating shafts 13 is adjusted through a lead screw controlled by a stepping motor; since the structure is common in the mechanical field, the structure is not described in detail herein with reference to the drawings.
As shown in fig. 2, the wafer clamping unit 20 includes a bolt 21, a nut 22 and a spring 23, the bolt 21 coaxially penetrates a plurality of diamond disks 30, and finally the spring 23 is sleeved in the bolt, and the diamond disks 30 are clamped and locked by the nut 22, so that the diamond disks 30 are clamped and fixed; the bolt 21 provided with the diamond disk 30 is arranged between the two rotating shafts 13 and is coaxial with the rotating shafts 13; further, the size of the gap between the adjacent rotating shafts 13 is smaller than the diameter of the diamond wafer 30, the wafer clamping unit 20 is supported by the two adjacent rotating shafts 13 without falling off, and the wafer clamping unit 20 drives the diamond wafer 30 to rotate reversely by the rotation of the rotating shafts 13 by using the principle of the sausage roaster, so that the side surface of the diamond wafer 30 is uniformly subjected to chemical vapor deposition.
When the wafer holding unit 20 is heated from room temperature to the cvd growth temperature, the difference in expansion size is caused by the difference in expansion coefficient between the diamond wafer 30 itself and the nut 22, and the spring 23 is used to compensate the difference in expansion deformation size and provide a stable pressure, so that the diamond wafer 30 can maintain good contact in a large temperature range.
In this embodiment, the diamond disk 30 is a ring structure, and a plurality of diamond disks 30 can be strung together by bolts 21.
As shown in fig. 3 and 4, the diamond disks 30 on two adjacent wafer clamping units 20 are clamped in an overlapping and staggered manner, and the overlapping portion of the diamond disks 30 is an overlapping area 40. During chemical vapor deposition, the peripheral deposition speed of the diamond wafer 30 is the fastest, and the deposition is slower in the direction towards the center of the circle, so that the deposition is basically not carried out any more when the deposition reaches a certain depth. It is only necessary to control the area of the overlapped region 40 to just cover the deposition growth region, and the remaining non-overlapped region will not be deposition grown. In addition, if the deposition growth zone is deep at the interstitial site of the diamond disks 30, the bottom surfaces of the two diamond disks 30 may also be made to completely overlap. The non-overlapped bare floor area is allowed to approach zero.
Referring to fig. 5 and 6, a second embodiment of the radial diamond wafer growing device according to the present invention is shown, the radial diamond wafer growing device includes a lifting/lowering rotating frame 10a and a wafer clamping unit 20a, the lifting/lowering rotating frame 10a includes a lifting/lowering rod device 11a, a cross frame 12a vertically installed on the top end of the lifting/lowering rod device 11a, and three sets of rotating shafts 13a arranged in parallel, the rotating shafts 13a are rotatably connected to the cross frame 12a and uniformly arranged along the extending direction of the cross frame 12 a; the wafer holding unit 20a is for coaxially holding a plurality of diamond wafers 30a in a cylindrical shape, and the wafer holding unit 20a is placed between the two rotation shafts 13 a.
The present embodiment has a lifting type rotation support 10a with the same structure as the first embodiment, and therefore the structure is not described herein again, which is different from the first embodiment in that: a wafer holding unit 20 a.
As shown in fig. 6, the wafer clamping unit 20a comprises a bolt 21a, a U-shaped clamping arm, a spring 23a and a chuck 24 for coaxially clamping a plurality of diamond disks 30a in an overlapping manner; the U-shaped supporting arm comprises a first supporting arm 25 and a second supporting arm 26, bearing seats 28 are arranged at the upper end of the first supporting arm 25 and the upper end of the second supporting arm 26, one end of the chuck 24 is connected with the bearing seats 28 in an installing mode, and the other end of the chuck is attached to a diamond wafer 30; the lower end of the first support arm 25 is provided with a limit post 27, and the lower end of the second support arm 26 is provided with a limit hole for inserting the limit post 27; the middle part of the limiting column 27 is provided with a thread groove, the bolt 21a is sleeved in the spring 23a and then extends into the limiting hole to be in threaded connection with the thread groove of the limiting column 27, and the spring 23a is abutted against the second support arm 26; the cartridge 24 containing the diamond wafer 30 is placed between the two rotary shafts 13a and is arranged coaxially with the rotary shafts 13a, the diamond wafer 30a allows the wafer holding unit 20a to be supported by the adjacent two rotary shafts 13a without dropping, and a U-shaped support arm is naturally provided vertically between the two rotary shafts 13 a.
In this embodiment, the diamond wafer 30a is a non-porous structure, and a plurality of diamond wafers 30a may be held by the chuck 24.
When the wafer chuck unit 20a is heated from room temperature to the cvd growth temperature, the difference in expansion size is caused by the difference in expansion coefficient between the diamond wafer 30a itself and the chuck 24, and the spring 23a is used to compensate the difference in expansion deformation size and provide a stable pressure, so that the diamond wafer 30a can maintain good contact in a large temperature range.
The above embodiments are only for describing the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and improvements made to the technical solution of the present invention by those skilled in the art without departing from the spirit of the design of the present invention should fall within the protection scope defined by the claims of the present invention.
Claims (10)
1. A radial growth device of diamond disk, its characterized in that: the device comprises a lifting rotary support and a wafer clamping unit; the lifting type rotating support comprises a lifting rod device, a cross frame, a distance adjusting assembly, a rotating driving assembly and at least two groups of rotating shafts arranged in parallel; the transverse frame is arranged at the top of the lifting rod device; the distance adjusting assembly is arranged on the transverse frame and used for adjusting the distance between two adjacent wafer clamping units; the rotary driving component is arranged on the distance adjusting component and is in driving connection with the rotary shaft; the wafer clamping unit is used for coaxially clamping a plurality of diamond wafers into a cylindrical shape and is placed between the two rotating shafts; the diamond wafers on two adjacent wafer clamping units are clamped in an overlapping and staggered mode; the outer two of the diamond disks are used as matching disks for protecting the bottom surface of the diamond disk clamped in the middle, so that the diamond disk in the middle can be epitaxially grown only on the side surface.
2. A diamond wafer radial growth device as in claim 1 wherein: and a water cooling jacket is arranged in the rotating shaft.
3. A diamond wafer radial growth device as in claim 1, wherein: the distance adjusting assembly is an electric adjusting assembly, and the electric adjusting assembly comprises a guide rail arranged on the cross frame, a plurality of sliding blocks arranged on the guide rail, a transmission rod and a stepping motor; one end of the transmission rod is connected with the sliding block, and the other end of the transmission rod is connected with an output shaft of the stepping motor; the rotary drive assembly is mounted on the slide.
4. A diamond wafer radial growth device as in claim 1, wherein: the distance adjusting assembly is a manual adjusting assembly, the manual adjusting assembly comprises an installation seat and a locking nut, the rotary driving assembly is installed on the installation seat, and a threaded column is arranged on one surface of the installation seat, which is opposite to the rotary driving assembly; the crossbearer is provided with a strip-shaped hole along the extending direction of the crossbearer, the threaded column is arranged in the strip-shaped hole in a penetrating way and is screwed and fixed by the locking nut.
5. A diamond wafer radial growth device as in any one of claims 1 to 4, wherein: the wafer clamping unit comprises a bolt and a nut, the bolt coaxially penetrates a plurality of diamond wafers, and the diamond wafers are clamped and locked through the nut; the bolt with the diamond disk is placed between the two rotating shafts and is arranged coaxially with the rotating shafts.
6. A diamond wafer radial growth device as in claim 5, wherein: the wafer clamping unit further comprises a spring, and the spring and the diamond wafer penetrate through the bolt and are clamped and locked through a nut.
7. A diamond wafer radial growth device as in any one of claims 1 to 4, wherein: the wafer clamping unit comprises a bolt, a U-shaped clamping arm and a chuck for coaxially overlapping and clamping a plurality of diamond wafers, two ends of the chuck are respectively connected with two sides of an opening at the upper end of the U-shaped clamping arm, and the U-shaped clamping arm is in threaded connection with the bolt; the chuck containing the diamond disk is placed between the two rotating shafts and is arranged coaxially with the rotating shafts.
8. A diamond wafer radial growth device as in claim 7, wherein: the U-shaped support arm comprises a first support arm and a second support arm, a limiting column is arranged at the lower end of the first support arm, a limiting hole for the limiting column to insert is formed in the lower end of the second support arm, and the bolt extends into the limiting hole and is in threaded connection with the limiting column.
9. A diamond wafer radial growth device as in claim 8, wherein: the wafer clamping unit further comprises a spring, the spring and the diamond wafer penetrate through the bolt and are clamped and locked through a nut, and the spring penetrates through the bolt and abuts against the second support arm.
10. A diamond wafer radial growth method based on the diamond wafer radial growth device according to any one of claims 1 to 9, characterized by comprising the steps of:
clamping a diamond wafer on a wafer clamping unit;
placing the wafer clamping unit clamped with the diamond wafer on a rotating shaft of the rotating bracket, so that the axis of the wafer clamping unit is parallel to the axis of the rotating shaft;
thirdly, the rotary driving component drives the rotary shaft to rotate, and the diamond wafer is driven to rotate reversely by the friction force between the rotary shaft and the side face of the diamond wafer;
step four, starting a chemical vapor deposition process to enable the diamond wafer to grow in a proper process atmosphere;
step five, adjusting the rotating speed, the height and the distance of the rotating shaft according to the growth state of the diamond wafer, so that the diamond wafer grows in a set process atmosphere;
and continuously circulating the step five, and stopping the growth process program when the diamond wafer grows to the set diameter.
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