CN215856452U - Single crystal diamond substrate table based on microwave plasma chemical vapor deposition - Google Patents
Single crystal diamond substrate table based on microwave plasma chemical vapor deposition Download PDFInfo
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- CN215856452U CN215856452U CN202121395932.2U CN202121395932U CN215856452U CN 215856452 U CN215856452 U CN 215856452U CN 202121395932 U CN202121395932 U CN 202121395932U CN 215856452 U CN215856452 U CN 215856452U
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Abstract
The utility model relates to the field of crystal synthesis, in particular to a microwave plasma chemical vapor deposition-based single crystal diamond substrate table, which comprises a molybdenum support, wherein concentric circular steps distributed in a stepped manner are concavely arranged on the molybdenum support from outside to inside, smooth step rounded corners are arranged at the steps of the steps, and a plurality of crystal holes for placing seed crystals are arranged on a platform of the steps. The temperature distribution of the diamond seed crystals is more uniform by reducing the height of the central substrate table; through the height difference between two adjacent steps and the arrangement of the fillets at the edges of the steps, the substrate at the central part is positioned at the lower position of a plasma ball, and the substrate at the edge part is positioned at the higher position of the plasma ball, so that the consistency of the growth temperature of the plurality of single crystal diamonds is achieved; the problem of temperature difference caused by uneven energy of the plasma ball is effectively solved.
Description
Technical Field
The utility model relates to the field of crystal synthesis, in particular to a single crystal diamond substrate table based on microwave plasma chemical vapor deposition.
Background
The microwave plasma chemical vapor deposition method has the advantages of electrodeless discharge, high energy conversion efficiency, pure plasma and the like, and is considered to be the preferred method for preparing the high-quality diamond film. However, the energy distribution of the generated plasma ball is not uniform, so that the temperature of the substrate is not uniform in the deposition process, the temperature of the substrate close to the central part of the ball is higher, and the temperature of the substrate close to the edge part of the ball is lower, so that a larger temperature difference occurs, the temperature of the substrate is not easy to control in the growth process, and the quality of the single crystal diamond is further influenced. This phenomenon is not good for us to grow multiple single crystal diamonds, and is also not good for us to realize high quality single crystal diamonds; therefore, the improvement of the substrate table has great significance for growing the single crystal diamond with high quality and high yield and for the industrialization of the single crystal diamond.
Based on the above-mentioned research backgrounds and phenomena, it is necessary to optimize the geometric design of the substrate stage; by changing the geometric design of the substrate table, the substrate at the central part is positioned at the lower position of the plasma ball, and the substrate at the edge part is positioned at the higher position of the plasma ball, so that the growth temperature consistency of the plurality of single crystal diamonds is achieved, the problem of temperature difference caused by uneven energy of the plasma ball is effectively solved, and the quality of the plurality of grown single crystal diamonds is improved.
The utility model content is as follows:
aiming at the problems in the prior art, the utility model aims to provide a substrate table for growing a plurality of single crystal diamonds by microwave plasma chemical vapor deposition, which can achieve the consistency of the growth temperature of the plurality of single crystal diamonds and effectively solve the problems of uneven substrate temperature and overlarge temperature difference by changing the geometric design of a molybdenum support.
In order to achieve the purpose, the utility model adopts the technical scheme that: a microwave plasma chemical vapor deposition-based single crystal diamond substrate table comprises a molybdenum support, wherein concentric circular steps distributed in a stepped mode are arranged on the molybdenum support in a concave mode from outside to inside, smooth step rounded corners are arranged at the step positions of the steps, and a plurality of crystal holes used for placing seed crystals are formed in the platform of the steps.
In the monocrystalline diamond substrate table based on microwave plasma chemical vapor deposition, the number of the steps is 2-6, the width of the platform of the steps is larger than the size of seed crystals, and the step height of two adjacent steps is 0.2-0.5 mm; the radius of the step fillet is 0.1-0.3 mm.
According to the monocrystalline diamond substrate table based on microwave plasma chemical vapor deposition, the number of crystal holes is gradually increased from inside to outside along the step.
In the single crystal diamond substrate platform based on microwave plasma chemical vapor deposition, the outer edge of the platform of the outermost step of the molybdenum support is provided with the edge step with the outer edge fillet.
The microwave plasma chemical vapor deposition-based monocrystalline diamond substrate table has the beneficial effects that: the temperature distribution of the diamond seed crystals is more uniform by reducing the height of the central substrate table; through the height difference between two adjacent steps and the arrangement of the fillets at the edges of the steps, the substrate at the central part is positioned at the lower position of a plasma ball, and the substrate at the edge part is positioned at the higher position of the plasma ball, so that the consistency of the growth temperature of the plurality of single crystal diamonds is achieved; the temperature difference problem caused by uneven energy of the plasma ball is effectively solved, the size of the crystal hole is determined by the seed crystal, the width of the step platform is determined by the size of the crystal hole, the width of the step can be reasonably set, and the method is suitable for growth of the seed crystal; the number of the crystal holes is determined by the number of the grown seed crystals, the width of the step platforms is set by the number of the crystal holes, and the number of the step platforms are set, so that a plurality of diamond seed crystals can be grown at one time to the maximum extent, and the yield of the single crystal diamond is improved.
Drawings
FIG. 1 is a diagram of the substrate table structure of the present invention;
FIG. 2 is a top view of a substrate table structure design of the present invention;
FIG. 3 is a schematic view showing the number and positions of the seed crystals on the substrate stage according to the present invention.
In the figure: the device comprises a molybdenum support 1, concentric steps 2, step round chamfers 3, crystal holes 4, a platform 5, side steps 6 and outer edge round chamfers 7.
Detailed Description
In order to make the technical solution of the present invention better understood by the skilled person, the following further explains the content of the present invention with reference to the specific embodiments and the accompanying drawings, but the content of the present invention is not limited to the following examples.
In the technical scheme of the utility model, the number of steps, the height difference of two adjacent steps, the width of the steps, the radius of the fillet, the position and the number of the pendulums are determined by seed crystals with different sizes. For the seed crystals with different sizes, the substrate table is designed to match the parameters of the seed crystals.
As shown in fig. 1-3, a microwave plasma chemical vapor deposition-based single crystal diamond substrate table comprises a molybdenum support, concentric circular steps distributed in a stepped manner are concavely arranged on the molybdenum support from outside to inside, smooth step rounded corners are arranged at the steps of the steps, and a plurality of crystal holes for placing seed crystals are arranged on a platform of the steps.
The number of the steps is 2-6, the width of the platform of the step is larger than the size of seed crystal, and the step height of two adjacent steps is 0.2-0.5 mm; the radius of the step fillet is 0.1-0.3 mm.
The number of the crystal holes is gradually increased from inside to outside along the step.
And the outer edge of the step platform at the outermost side of the molybdenum support is provided with an edge step with an outer edge fillet.
Generally, the temperature of the center of the plasma ball is higher than that of the edge of the plasma ball, the temperature is gradually reduced from the center to the periphery, and the seed crystal in the center area is far away from the plasma ball by reducing the height of the center substrate table, so that the temperature is reduced, and the temperature of the diamond seed crystal in the center is consistent with that of the edge of the diamond seed crystal.
The extreme edge of the molybdenum torr can generate an edge discharge phenomenon, and the temperature is higher, so that the seed crystal needs to have a certain distance from the extreme edge.
The utility model relates to a method for growing a plurality of single crystal diamonds on a single crystal diamond substrate table based on microwave plasma chemical vapor deposition, which generally comprises the following steps:
firstly, opening a water cooling system of an MPCVD device;
opening a reaction cavity of the MPCVD device, firstly placing a substrate table on a water cooling table, then placing a plurality of diamond seed crystals which are pretreated on the substrate table, and closing the reaction cavity;
vacuumizing the reaction cavity to below 1 Pa;
opening a hydrogen pressure reducing valve, introducing hydrogen, adjusting the air pressure, then starting a microwave power supply, adjusting the microwave input power, and exciting plasma;
and continuously introducing hydrogen or oxygen, simultaneously adjusting the microwave input power and the reaction pressure, etching the seed crystal, and introducing methane to start epitaxial growth of the diamond on the seed crystal.
Example 1:
processing design of the substrate table: processing a smooth-surface molybdenum sheet into a step-shaped concentric step which is recessed from outside to inside; the step number is 3, the height difference of two adjacent steps is 0.3mm, the radius of the fillet is 0.15mm, the step width is 20mm, 15mm and 15mm respectively, the position and the number of the pendulums are determined by the number and the size of the grown seed crystals, the pendulums extend from the center position of the molybdenum support to the periphery and are sequentially increased, and the distance between crystal holes is set to be proper distance according to the size of the seed crystals and the size of the grown single crystal diamond.
Growth of pieces of single crystal diamond:
firstly, opening a water cooling system of an MPCVD device;
opening a reaction cavity of the MPCVD device, firstly placing a substrate table on a water cooling table, then placing a plurality of diamond seed crystals which are pretreated on the substrate table, and closing the reaction cavity;
vacuumizing the reaction cavity until the air pressure is 0.1-1.0 Pa;
opening a hydrogen pressure reducing valve, introducing hydrogen (99.9999%), wherein the mass flow is 300-;
continuously introducing hydrogen with the mass flow of 300-2000sccm, introducing oxygen (99.9999%) with the mass flow of 5-50sccm, simultaneously adjusting the microwave input power to 3-20kw, the reaction gas pressure to 10-30kPa, and etching the seed crystal for 10-60 min;
introducing methane (99.9999%), wherein the mass flow rate is 10-200sccm, the microwave input power is 3-35kw, the reaction gas pressure is 10-30kPa, and the temperature difference between the substrate at the central part and the substrate at the edge part is controlled within 100 ℃.
By using the device, the method and the process parameters for growing the single crystal diamond, the deposition rate of the epitaxial diamond is 5-30 mu m/h, the single crystal diamond with the thickness of 0.1-4.0mm can be obtained after 24-280 hours of growth, and the yield can reach more than 70%.
Example 2
The same parts in this embodiment and embodiment 1 are not repeated, and the difference lies in that the step number is 2, the difference in height of two adjacent steps is 0.2mm, the radius of the fillet is 0.1mm, the step width is 20mm, 15mm respectively, the pendulum piece position and quantity are decided by the quantity and the size of the seed crystal of growth, extend from the central point of molybdenum support to the periphery and increase in proper order, the distance between the brilliant hole sets up suitable interval according to the size of seed crystal and the size of the single crystal diamond after growing.
By using the device, the method and the process parameters for growing the single crystal diamond, the deposition rate of the epitaxial diamond is 5-30 mu m/h, the single crystal diamond with the thickness of 0.1-4.0mm can be obtained after 24-280 hours of growth, and the yield can reach more than 70%.
Example 3
The same parts of this embodiment and the above-mentioned embodiment are not repeated again, and its difference lies in that the step number is 6, and the difference in height of two adjacent steps is 0.5mm, and radius of rounding off is 0.3mm, and the step width is 20mm respectively, 15mm, 15mm, 15mm, 15mm, 15mm, and the pendulum piece position and quantity are decided by the quantity and the size of the seed crystal of growth, and it increases to extend in proper order to the periphery from the central point that the molybdenum held in the palm to follow, and the distance between the brilliant hole sets up suitable interval according to the size of seed crystal and the size of the single crystal diamond after growing.
By using the device, the method and the process parameters for growing the single crystal diamond, the deposition rate of the epitaxial diamond is 5-30 mu m/h, the single crystal diamond with the thickness of 0.1-4.0mm can be obtained after 24-280 hours of growth, and the yield can reach more than 70%.
The above-mentioned embodiments are only for illustrating the structural conception and the characteristics of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, and the protection scope of the present invention is not limited thereby. All equivalent changes or modifications made according to the spirit of the present disclosure should be covered within the scope of the present disclosure.
Claims (4)
1. A single crystal diamond substrate platform based on microwave plasma chemical vapor deposition comprises a molybdenum support and is characterized in that: the molybdenum support is provided with concentric steps distributed in a stepped manner from outside to inside in a concave manner, smooth step fillets are arranged at the steps of the steps, and a plurality of crystal holes used for placing seed crystals are formed in a platform of the steps.
2. A microwave plasma chemical vapor deposition based single crystal diamond substrate table according to claim 1, wherein: the number of the steps is 2-6, the width of the platform of the step is larger than the size of seed crystal, and the step height of two adjacent steps is 0.2-0.5 mm; the radius of the step fillet is 0.1-0.3 mm.
3. A microwave plasma chemical vapor deposition based single crystal diamond substrate table according to claim 1, wherein: the number of the crystal holes is gradually increased from inside to outside along the step.
4. A microwave plasma chemical vapor deposition based single crystal diamond substrate table according to claim 1, wherein: and the outer edge of the step platform at the outermost side of the molybdenum support is provided with an edge step with an outer edge fillet.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114561698A (en) * | 2022-03-02 | 2022-05-31 | 河南天璇半导体科技有限责任公司 | Method for batch production of diamond single crystals by MPCVD (multi-phase chemical vapor deposition) method and molybdenum substrate table |
| CN114807907A (en) * | 2022-05-05 | 2022-07-29 | 南方科技大学 | MPCVD carrier and method for depositing diamond coating on surface of cutter |
| CN115506014A (en) * | 2022-09-27 | 2022-12-23 | 四川本钻科技有限公司 | Substrate table for single crystal diamond crystal growth and use method thereof |
| WO2024085357A1 (en) * | 2022-10-20 | 2024-04-25 | 서울시립대학교 산학협력단 | Diamond manufacturing apparatus using plasma and disk assembly used therein |
-
2021
- 2021-06-23 CN CN202121395932.2U patent/CN215856452U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114561698A (en) * | 2022-03-02 | 2022-05-31 | 河南天璇半导体科技有限责任公司 | Method for batch production of diamond single crystals by MPCVD (multi-phase chemical vapor deposition) method and molybdenum substrate table |
| CN114807907A (en) * | 2022-05-05 | 2022-07-29 | 南方科技大学 | MPCVD carrier and method for depositing diamond coating on surface of cutter |
| CN115506014A (en) * | 2022-09-27 | 2022-12-23 | 四川本钻科技有限公司 | Substrate table for single crystal diamond crystal growth and use method thereof |
| WO2024085357A1 (en) * | 2022-10-20 | 2024-04-25 | 서울시립대학교 산학협력단 | Diamond manufacturing apparatus using plasma and disk assembly used therein |
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