CN217869189U - Substrate table for growth of single crystal diamond - Google Patents
Substrate table for growth of single crystal diamond Download PDFInfo
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- CN217869189U CN217869189U CN202221674575.8U CN202221674575U CN217869189U CN 217869189 U CN217869189 U CN 217869189U CN 202221674575 U CN202221674575 U CN 202221674575U CN 217869189 U CN217869189 U CN 217869189U
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Abstract
The utility model belongs to the field of single crystal diamond preparation, a base plate platform for single crystal diamond growth is disclosed. The seed crystal substrate table comprises a substrate table main body with a cylindrical structure or a circular truncated cone-shaped structure, wherein a plurality of grid grooves for accommodating seed crystals are formed in the upper surface of the substrate table main body; grid grooves are distributed on the upper surface of the substrate table main body in a layered mode from the center to the edge, the grid grooves comprise outer ring grid grooves of an outer layer and inner grid grooves located on the inner side of the outer ring grid grooves, the depth of each inner grid groove is 0.05 to 0.15mm smaller than the thickness of a seed crystal, and the depth of each outer ring grid groove is 0.05 to 0.2mm smaller than the depth of each inner grid groove; the bottom of the grid groove is provided with a soaking groove, and the length and width of the soaking groove are smaller than those of the seed crystal. The utility model discloses a substrate platform simple structure, easily production manufacturing can prepare high-quality, high roughness single crystal diamond in batches, has reduced manufacturing cost, has good industrial application prospect.
Description
Technical Field
The utility model belongs to single crystal diamond preparation field, more specifically relates to a base plate platform that single crystal diamond grows and uses.
Background
Microwave chemical vapor deposition (MPCVD) is the preferred solution for producing high quality diamond due to its advantages of high plasma density and no electrode contamination. In the deposition process of MPCVD, the structure of the substrate table used has an impact on the deposition rate and the quality of the preparation of diamond.
In order to improve the deposition rate of the diamond, the substrate table is generally set to be open, the substrate table with the structure causes that the temperature of seed crystals is gradually reduced from the edge to the center due to the edge effect of microwave discharge when the diamond is deposited, the temperature difference can even reach dozens of degrees, and the edge effect of the diamond single crystal is enhanced along with the increase of the height difference between the growth surface of the diamond single crystal and the substrate table, so that the surface flatness of the prepared diamond is extremely poor, the stress is large, and the application of high and new technologies is not facilitated.
Based on the problems brought by the open type substrate table, in order to obtain high-quality diamond, a substrate table with a closed structure is commonly used at present, the structure improves the energy distribution of plasma in the initial growth stage and slows down the edge effect, but the growth surface is higher than the substrate table along with the increase of deposition time, so that the growth surface of a blank is uneven; if the growth grooves of the substrate table are too deep, the deposition rate of the single crystal diamond will be extremely slow, increasing the production cost.
SUMMERY OF THE UTILITY MODEL
To the above-mentioned problem that exists among the prior art, the utility model aims to provide a basic plate platform that single crystal diamond growth was used, this basic plate platform simple structure, with low costs, easily production manufacturing, but mass production high quality high roughness single crystal diamond.
In order to achieve the above object, the utility model adopts the following technical scheme:
a substrate table for growing single crystal diamond comprises a substrate table main body with a cylindrical structure or a round table structure, wherein a plurality of grid grooves for accommodating seed crystals are arranged on the upper surface of the substrate table main body;
the grid grooves are arranged on the upper surface of the substrate table main body in a layered mode from the center to the edge direction, the grid grooves comprise outer ring grid grooves on the outermost layer and inner grid grooves located on the inner side of the outer ring grid grooves, the depth of each inner grid groove is 0.05-0.15mm smaller than the thickness of a seed crystal, and the depth of each outer ring grid groove is 0.05-0.2mm smaller than the depth of each inner grid groove;
the bottom of the grid groove is provided with a soaking groove, and the length and width of the soaking groove are smaller than those of the seed crystal.
Preferably, the soaking grooves are located in the bottom center region of the grid grooves.
Preferably, the seed crystal is of a square column structure, and the grid groove is of a square column hollow structure; further preferably, the width of the grid groove is 0.15 to 0.5mm larger than that of the seed crystal.
Preferably, the soaking groove is of a square cylindrical hollow structure; further preferably, the depth of the soaking groove is 0.05-0.3 mm, and the width of the soaking groove is 2-4 mm smaller than that of the seed crystal.
Preferably, the grid grooves are uniformly arranged on the upper surface of the substrate table main body; further preferably, the grid grooves are arranged on the upper surface of the substrate table main body in any one of a plurality of linear array arrangements, a plurality of layers of circumferential array arrangements and a plurality of layers of rectangular array arrangements.
Preferably, the outermost first, second or first layer is an outer ring of grid grooves.
Preferably, the closest distance between the outer mesh groove and the edge of the substrate table body is not less than 1mm.
Preferably, the distance between the adjacent grid grooves is 0.2 to 0.5mm.
Preferably, adjacent grid grooves are communicated with each other. Considering that the polycrystalline diamond can begin to grow on the substrate table after the diamond grows for a certain time, the adjacent grid grooves are communicated, and the temperature difference of each point of the whole substrate table and the temperature difference of each seed crystal can be reduced.
The square column structure mentioned in the utility model is a cuboid structure with equal length and width.
Compared with the prior art, the beneficial effects of the utility model are that:
(1) The utility model discloses a set up the net recess on the base plate bench, the net recess includes outer lane net recess and the inside net recess of the different degree of depth, make after placing the seed crystal of same thickness, seed crystal growth face is higher than seed crystal growth face in the inside net recess in the outer lane net recess, form "closed base plate platform", do benefit to and grow out smooth single crystal diamond in the inside net recess of central zone, and because edge and central zone's single crystal diamond synchronous growth, can not lead to this difference in height to reduce or increase too, can grow out high-quality diamond always, this structure can slow down single crystal diamond edge polycrystalline diamond's growth rate in addition, improve single growth thickness.
(2) The utility model discloses a substrate platform simple structure, easily production manufacturing can prepare high-quality, high roughness single crystal diamond in batches, has reduced manufacturing cost, has good industrial application prospect.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic plan view of a substrate stage for single crystal diamond growth according to the present invention;
FIG. 2 is a sectional view of a substrate table for use in the growth of single crystal diamond according to the present invention;
fig. 3 is a partially enlarged structural view of fig. 2.
Detailed Description
To facilitate understanding of the present invention, the present invention will be described more fully and specifically with reference to the accompanying drawings and preferred embodiments, but the scope of the present invention is not limited to the following specific embodiments.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the present invention.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by an existing method.
Example 1
As shown in fig. 1 to 3, the present embodiment provides a substrate table for growth of a single crystal diamond, the substrate table includes a substrate table main body 1 having a cylindrical structure, the substrate table main body 1 has a cylindrical structure with a diameter of 50.6mm and a thickness of 10mm, 21 grid grooves 2 having a square-cylindrical hollow structure are uniformly distributed on an upper surface of the substrate table main body 1, and are used for accommodating and limiting seed crystals, the linear array arrangement is layered, parameters of length, width and height of the seed crystals to be accommodated are 7mm × 7mm × 0.3mm, and the width of each grid groove 2 is 7.5mm;
in this embodiment, the grid grooves 2 are arranged in layers from the center to the edge on the upper surface of the substrate table main body 1, the grid grooves 2 include outer grid grooves on the outer layer and inner grid grooves located inside the outer grid grooves, the depth of the outer grid grooves is 0.1mm, and the depth of the inner grid grooves is 0.15mm; the closest distance between the outer mesh groove and the edge of the substrate table body is 1mm.
In this embodiment, the bottom center of every net recess 2 is provided with soaking recess 3 of square columnar form hollow structure, and the degree of depth of soaking recess 3 is 0.05mm, and the width of soaking recess 3 is 3mm, and the reducible seed crystal edge of setting up of soaking recess 3 makes the growth face level and smooth with the regional temperature difference in center.
In the embodiment, the distance between the adjacent grid grooves is 0.2 to 0.5mm. And the adjacent grid grooves are mutually communicated, and particularly, the adjacent grid grooves are mutually communicated at the connecting vertex angle in the embodiment, so that the temperature difference of each point of the whole substrate table and the temperature difference of each seed crystal are further reduced.
Example 2
This embodiment is basically the same as embodiment 1, except that: the depth of the internal grid grooves is 0.20mm.
Example 3
The present embodiment provides a method for producing a single crystal diamond, including the steps of:
(1) Selecting the seed crystals with the height close to each other (7 mm multiplied by 0.3 mm), wherein the height difference is less than or equal to 0.09mm. Observing the appearance of the growth surface of the seed crystal in a microscope, and removing unqualified seed crystals. Ultrasonically cleaning qualified seed crystals for 10min by using deionized water, and finally putting the seed crystals into aqua regia for acid cleaning until no bubbles are generated on the surfaces of the seed crystals;
(2) And (3) carrying out ultrasonic treatment on the seed crystal after acid washing for 10min by using deionized water, acetone and absolute ethyl alcohol in sequence, and drying by using dry nitrogen. Seed crystals are sequentially placed in grid grooves of the substrate table in the embodiment 1 according to numbers, and the substrate table is placed in the deposition cavity after the seed crystals are placed. Pumping the cavity pressure to be below 0.8Pa, opening a hydrogen valve, setting the hydrogen flow value to be 500sccm, starting microwaves when the pressure rises to 1kPa, setting the microwave power to be 600W, setting the heating speed to be 10 ℃/min, heating to 900 ℃, setting the pressure rise value to be 21KPa, and etching for 1h;
(3) After etching is finished, opening a methane valve, setting the flow value of methane to be 40sccm, setting the pressure to be 21kPa, keeping the temperature at 900 ℃, performing low-temperature growth for 12 hours, then setting the heating speed to be 10 ℃/min, heating to 1050 ℃, setting the pressure to be 21KPa, and performing high-temperature growth for 100 hours;
(4) And after the growth is finished, closing a methane valve, stopping introducing methane, setting the heating rate to be 5 ℃/min to 1200 ℃, preserving the temperature for 1h, then cooling by taking 100 ℃ as a gradient and 2 ℃/min, preserving the temperature for 1h at each gradient temperature to room temperature, closing microwaves, and stopping introducing hydrogen to obtain the single crystal diamond.
Example 4
This embodiment is basically the same as embodiment 3, except that: the single crystal diamond growth substrate stage in example 2 was used.
The growth process of the single crystal diamonds of example 3 and example 4 was examined, and the results are shown in table 1. The base plate platform of the utility model can improve the flatness of the diamond growth surface and slow down the growth rate of the edge of the single crystal diamond.
TABLE 1
| Rate (. Mu.m/h) | Height difference of growth surface (mm) | Edge poly | |
| Example 3 | 10 | 0.08 | Is rarely used |
| Example 4 | 8.5 | 0.05 | Is rarely used |
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A substrate table for growing single crystal diamond is characterized in that the substrate table comprises a substrate table main body with a cylindrical structure or a round table structure, and a plurality of grid grooves for accommodating seed crystals are arranged on the upper surface of the substrate table main body;
the grid grooves are distributed on the upper surface of the substrate table main body in a layered mode from the center to the edge, each grid groove comprises an outer ring grid groove and an inner grid groove, the outer ring grid groove is located on the outer layer, the inner grid groove is located on the inner side of the outer ring grid groove, the depth of each inner grid groove is 0.05 to 0.15mm smaller than the thickness of each seed crystal, and the depth of each outer ring grid groove is 0.05 to 0.2mm smaller than the depth of each inner grid groove;
the bottom of the grid groove is provided with a soaking groove, and the length and width of the soaking groove are smaller than those of the seed crystal.
2. The substrate table of claim 1, wherein the seed crystal is a square columnar structure and the grid groove is a square columnar hollow structure.
3. The substrate table according to claim 2, wherein the width of the grid groove is 0.15 to 0.5mm larger than the width of the seed crystal.
4. The substrate table of claim 2, wherein the soaking groove is a square cylindrical hollow structure.
5. The substrate table according to claim 4, wherein the depth of the soaking groove is 0.05 to 0.3mm, and the width of the soaking groove is 2 to 4mm smaller than the width of the seed crystal.
6. The substrate table of claim 1, wherein the grid grooves are uniformly disposed on an upper surface of the substrate table body; the grid grooves are arranged on the upper surface of the substrate table main body in any one of a plurality of linear arrays, a plurality of layers of circumferential arrays and a plurality of layers of rectangular arrays.
7. The substrate table of claim 1, wherein the first, second, or first outermost layer is an outer perimeter grid groove.
8. The substrate table of claim 1, wherein a closest distance between the outer perimeter grid groove and an edge of the substrate table body is not less than 1mm.
9. The substrate table according to claim 1, wherein a distance between adjacent grid grooves is 0.2 to 0.5mm.
10. The substrate table as claimed in any one of claims 1 to 9, wherein the adjacent grid grooves are communicated with each other.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115110148A (en) * | 2022-07-01 | 2022-09-27 | 安徽光智科技有限公司 | Preparation method of single crystal diamond |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115110148A (en) * | 2022-07-01 | 2022-09-27 | 安徽光智科技有限公司 | Preparation method of single crystal diamond |
| CN115110148B (en) * | 2022-07-01 | 2023-12-05 | 安徽光智科技有限公司 | Preparation method of monocrystalline diamond |
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