CN101597793B - Crucible for growing polysilicon ingot - Google Patents
Crucible for growing polysilicon ingot Download PDFInfo
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- CN101597793B CN101597793B CN2009101156340A CN200910115634A CN101597793B CN 101597793 B CN101597793 B CN 101597793B CN 2009101156340 A CN2009101156340 A CN 2009101156340A CN 200910115634 A CN200910115634 A CN 200910115634A CN 101597793 B CN101597793 B CN 101597793B
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Abstract
The invention relates to a crucible for growing silicon ingot in the field of solar energy, in particular to a crucible for growing polysilicon ingot. The crucible for growing the polysilicon ingot is characterized in that: a bottom plate 2 of the crucible is provided with a plurality of holes 3; and the depth of the holes 3 is 1 to 25 mm, the aperture of the level part of the holes 3 and the bottom plate 2 of the crucible is 1 to 30 mm, and the distributed density of the holes 3 and the bottom plate 2 of the crucible is 1 to 100 per square decimeter. By adopting the crucible for growing the polysilicon ingot to grow polysilicon ingot, the directionality of crystal grains of the polysilicon ingot can be remarkably improved, crystal grains of the polysilicon ingot predominate in <110> and <112> crystal orientation, multiple parallel twins boundaries caused by <111> crystal face are reduced, the number of crystal boundaries is reduced, and simultaneously the percentage of sigma 3 shallow energy level crystal boundary is improved so as to effectively prolong the minority carrier lifetime of a silicon chip, and the conversion efficiency of solar cells made of the silicon chip is improved.
Description
Technical field
The present invention relates to the crucible of the crucible of a kind of growing silicon ingot in the field of solar energy, particularly a kind of growing polycrystalline silicon ingot.
Background technology
The casting of present polysilicon generally adopts directional freeze to carry out.The general smooth square crucible in bottom that adopts the element body composition of the basal surface that limits internal capacity and sidewall; Through adopting crucible to descend; Heat-insulation cage promotes, and technologies such as cold-crucible form certain thermograde in crucible bottom, and forming core is grown up gradually from the base plate of crucible.Because the bottom is smooth, temperature evenly causes unordered spontaneous nucleation, forms a lot of crystal grain, and the crystal orientation is random, orientation is driven assorted weak effect, and minority carrier life time is low, and the efficiency of conversion of the solar battery sheet of finally processing is lower.
Summary of the invention
The object of the present invention is to provide a kind of crucible of growing polycrystalline silicon ingot, adopt this crucible can obtain to have the polycrystal silicon ingot of premium properties.
The technical scheme that the present invention adopts is:
A kind of crucible of growing polycrystalline silicon ingot, wherein: the base plate of crucible is provided with a plurality of holes.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the degree of depth in hole is 1mm-25mm.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the hole is 1mm-30mm with the aperture at the concordant place of base plate of crucible.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the hole is a 1-100/square decimeter in the density of the backplane of crucible.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the diameter in described each hole increases along the opening direction in hole gradually.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the hole that is shaped as taper shape, triangular pyramidal, cubic tapered hole or other Any shape in described hole.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the base plate of crucible can be all-in-one-piece.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the base plate of crucible can be knockdown.
A kind of crucible of growing polycrystalline silicon ingot, wherein: the base plate of described knockdown crucible comprises the lower shoe of the upper plate of crucible, crucible, the upper plate of crucible is provided with a plurality of holes.
A kind of crucible of growing polycrystalline silicon ingot, wherein: around the base plate of crucible, have sidewall, the base plate of crucible and sidewall to crowd around the cavity that forms crucible.
The change in depth in table 1 hole is to the influence of polycrystal silicon ingot quality
(all the other conditions are identical: employing be the monobloc(k)type crucible, be 12mm with the aperture at the concordant place of base plate of crucible, the hole is 20/square decimeter in the density of the backplane of crucible):
Can find out thus; Within the specific limits; The quality of polycrystal silicon ingot improves along with the increase of the degree of depth in hole, but the degree of depth in hole increases to a certain degree, and the quality of polycrystal silicon ingot can not continue to improve; Opposite polycrystal silicon ingot can be because the generation of silicon liquid leakage current or other bad phenomenon can appear in the weakened of crucible.
The variation in table 2 and the aperture at the concordant place of base plate of crucible is to the influence of polycrystal silicon ingot quality
(all the other conditions are identical: employing be monobloc(k)type crucible base plate, the degree of depth in hole is 10mm, the hole is 8/square decimeter in the density of the backplane of crucible):
Can find out thus; Within the specific limits; The quality of polycrystal silicon ingot is along with improving with the increase in the aperture at the concordant place of base plate of crucible, but increases to a certain degree with the aperture at the concordant place of base plate of crucible, and the quality of polycrystal silicon ingot can not continue to improve; It is opposite because silicon liquid leakage current or other bad phenomenon may appear in the weakened of crucible.
Table 3 hole is in the influence to the polycrystal silicon ingot quality of the variable density of the backplane of crucible
(all the other conditions are identical: employing be monobloc(k)type crucible base plate, the degree of depth in hole is 10mm, is 7mm with the aperture at the concordant place of base plate of crucible):
Can find out thus; Within the specific limits; The quality of polycrystal silicon ingot along with the hole with improve in the increase of the density of the backplane of crucible, but the hole increases to a certain degree in the density of the backplane of crucible, the quality of polycrystal silicon ingot can not continue to improve; Opposite polycrystal silicon ingot can be because silicon liquid leakage current or other bad phenomenon may appear in the weakened of crucible.
Because of this base plate is provided with a plurality of holes, compare with the crucible that traditional bottom is smooth, can produce certain influence to the process of growing polycrystalline silicon ingot.Bring other negative impacts for the performance of polycrystal silicon ingot through the experiment detection.
Combined type copple is compared with the monobloc(k)type crucible; Combined type copple is made up of the lower shoe of the upper plate of crucible, crucible; The upper plate of crucible is provided with the setting in a plurality of holes; So general can be owing to the degree of depth in hole, the intensity of crucible is exerted an influence in the variation of the density of the backplane of crucible with the aperture at the concordant place of base plate of crucible, hole, but with respect to the monobloc(k)type crucible, owing to combined type copple has been set up upper plate; Cause crucible to be used for the space of splendid attire silicon material and diminish, thereby the productive rate of polycrystal silicon ingot descends.
And since along with the degree of depth in hole, with the increase of the aperture at the concordant place of base plate of crucible or hole in the density of the backplane of crucible; The thickness of the upper plate of knockdown crucible increases; The volume that is shared crucible increases; Being used for the space of splendid attire silicon material diminishes, thereby causes the productive rate of polycrystal silicon ingot to descend.
Table 4 adopts crucible provided by the invention and traditional smooth crucible in bottom that the influence of polycrystal silicon ingot quality is compared
High-quality battery sheet changes efficient about 15.8-16.8%, and low-quality battery sheet changes efficient about 14-15%.And the every raising 1% of efficiency of conversion in the photovoltaic industry, enterprise profit all will improve about 10%.Common low-quality battery sheet nobody shows any interest in, and battery sheet efficiency of conversion improves 0.5%-0.8%, with bringing considerable profit.
The method that the experimental data of the battery sheet efficiency of conversion that relates to of the present invention provides with reference to CNS GB/T6495 obtains.Also can obtain with reference to similar approach international standard IEC60904.Under same experiment condition, can obtain above-mentioned conclusion.
Advantage of the present invention: adopt the crucible of a kind of growing polycrystalline silicon ingot provided by the invention to come growing polycrystalline silicon ingot; Can significantly improve the directional property of polycrystal silicon ingot crystal grain; Polycrystal silicon ingot is dominant at the crystal grain in < 110>and < 112>crystal orientation; The twin boundaries (parallel twins) of the multiple parallel that minimizing < 111>crystal face causes reduces number of grain boundaries; Improve the per-cent of ∑ 3 shallow energy level crystal boundaries simultaneously, thereby increased the minority carrier life time of silicon chip effectively, adopt the efficiency of conversion of the solar battery sheet that this silicon chip processes to be improved.
Description of drawings
Accompanying drawing 1 is a plan structure synoptic diagram of the present invention.
Accompanying drawing 2 is structural representations of base plate 2 of the crucible of embodiments of the invention 50 or embodiment 51.
Accompanying drawing 3 is structural representations of base plate 2 of the crucible of embodiments of the invention 49.
Accompanying drawing 4 is structural representations of embodiments of the invention 50 or embodiment 51.
Accompanying drawing 5 is structural representations of embodiments of the invention 49.
Reference numeral: the lower shoe 6 of the cavity 4 of the base plate 2 of sidewall 1, crucible, hole 3, crucible, the upper plate 5 of crucible, crucible.
Embodiment
The crucible of embodiment 1, a kind of growing polycrystalline silicon ingot, wherein: the base plate 2 of crucible is provided with a plurality of holes 3.
The crucible of embodiment 2, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 0.1mm.All the other are with embodiment 1.
The crucible of embodiment 3, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 0.5.All the other are with embodiment 1.
The crucible of embodiment 4, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 0.8mm.All the other are with embodiment 1.
The crucible of embodiment 5, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 1mm.All the other are with embodiment 1.
The crucible of embodiment 6, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 2mm.All the other are with embodiment 1.
The crucible of embodiment 7, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 3mm.All the other are with embodiment 1.
The crucible of embodiment 8, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 5mm.All the other are with embodiment 1.
The crucible of embodiment 9, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 8mm.All the other are with embodiment 1.
The crucible of embodiment 10, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 10mm.All the other are with embodiment 1.
The crucible of embodiment 11, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 12mm.All the other are with embodiment 1.
The crucible of embodiment 12, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 14mm.All the other are with embodiment 1.
The crucible of embodiment 13, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 16mm.All the other are with embodiment 1.
The crucible of embodiment 14, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 18mm.All the other are with embodiment 1.
The crucible of embodiment 15, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 20mm.All the other are with embodiment 1.
The crucible of embodiment 16, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 23mm.All the other are with embodiment 1.
The crucible of embodiment 17, a kind of growing polycrystalline silicon ingot, wherein: the degree of depth in hole 3 is 25mm.All the other are with embodiment 1.
The crucible of embodiment 18, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 1mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 19, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 2mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 20, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 3mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 21, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 5mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 22, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 8mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 23, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 10mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 24, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 12mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 25, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 15mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 26, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 18mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 27, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 20mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 28, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 23mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 29, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 28mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 30, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 30mm with the aperture at the base plate 2 concordant places of crucible.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 31, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 1/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 32, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 3/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 33, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 5/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 34, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 10/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 35, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 15/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 36, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 20/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 37, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 30/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 38, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 40/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 39, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 50/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 40, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 60/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 41, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 70/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 42, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 80/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 43, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 90/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 44, a kind of growing polycrystalline silicon ingot, wherein: hole 3 is 100/square decimeter with the density that base plate 2 at crucible distributes.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 45, a kind of growing polycrystalline silicon ingot, wherein: the diameter in described each hole 3 increases along the opening direction in hole gradually.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 46, a kind of growing polycrystalline silicon ingot, wherein: described hole 3 be shaped as taper shape.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 47, a kind of growing polycrystalline silicon ingot, wherein: described hole 3 be shaped as triangular pyramidal.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 48, a kind of growing polycrystalline silicon ingot, wherein: described hole 3 be shaped as cubic tapered hole.All the other are with any embodiment among the embodiment 1-17.
The crucible of embodiment 49, a kind of growing polycrystalline silicon ingot, wherein: the base plate 2 of crucible is all-in-one-piece.All the other are with embodiment 1.
The crucible of embodiment 50, a kind of growing polycrystalline silicon ingot, wherein: the base plate 2 of crucible is knockdown.All the other are with embodiment 1.
The crucible of embodiment 51, a kind of growing polycrystalline silicon ingot, wherein: the base plate 2 of described knockdown crucible comprises the lower shoe 6 of the upper plate 5 of crucible, crucible, the upper plate 5 of crucible is provided with a plurality of holes 3.All the other are with embodiment 50.
The crucible of embodiment 52, a kind of growing polycrystalline silicon ingot, wherein: around the base plate 2 of crucible, sidewall 1 is arranged, the base plate 2 and the sidewall 1 of crucible are crowded around the cavity 4 that forms crucible.All the other are with any embodiment among the embodiment 1-51.
Claims (4)
1. the crucible of a growing polycrystalline silicon ingot, it is characterized in that: the base plate of crucible (2) is provided with a plurality of holes (3); The degree of depth in hole (3) is 10mm; Hole (3) is 12mm with the aperture at the concordant place of base plate (2) of crucible; Hole (3) is 20/square decimeter in the density of base plate (2) distribution of crucible; The base plate of crucible (2) is all-in-one-piece.
2. the crucible of a kind of growing polycrystalline silicon ingot as claimed in claim 1, it is characterized in that: the diameter of described hole (3) increases along the opening direction in hole gradually.
3. according to claim 1 or claim 2 a kind of crucible of growing polycrystalline silicon ingot is characterized in that: described hole (3) be shaped as taper shape.
4. like the crucible of any described a kind of growing polycrystalline silicon ingot in the claim 1,2, it is characterized in that: the base plate (2) at crucible has sidewall (1) all around, and the base plate of crucible (2) is crowded around the cavity (4) that forms crucible with sidewall (1).
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| CN2009101156340A CN101597793B (en) | 2009-07-02 | 2009-07-02 | Crucible for growing polysilicon ingot |
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| CN2009101156340A CN101597793B (en) | 2009-07-02 | 2009-07-02 | Crucible for growing polysilicon ingot |
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| CN101597793B true CN101597793B (en) | 2012-05-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI465615B (en) * | 2012-08-21 | 2014-12-21 | Gigastorage Corp | Multicrystalline silicon wafer, multicrystalline silicon ingot, and method for manufacturing multicrystalline silicon ingot |
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| CN101935869B (en) * | 2010-09-17 | 2013-11-20 | 浙江大学 | Crucible and substrate slice for growing and casting monocrystalline silicon |
| CN101935868A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Crucible for growing large-grain cast polycrystalline silicon |
| CN101979718A (en) * | 2010-11-30 | 2011-02-23 | 奥特斯维能源（太仓）有限公司 | Quartz crucible and method for casting quasi-single crystal |
| FR2979638A1 (en) * | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | DEVICE FOR MANUFACTURING CRYSTALLINE MATERIAL FROM A NON-UNIFORM THERMAL RESISTANCE CUP |
| CN103088418B (en) * | 2011-11-01 | 2015-07-08 | 昆山中辰矽晶有限公司 | Crystalline silicon ingot and its making method |
| CN102605418A (en) * | 2012-01-16 | 2012-07-25 | 上澎太阳能科技(嘉兴)有限公司 | Solar cell substrate, manufacturing method of solar cell and crucible used for same |
| WO2013149559A1 (en) * | 2012-04-01 | 2013-10-10 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot, preparation method therefor and polycrystalline silicon chip |
| CN102776554B (en) * | 2012-04-01 | 2015-09-16 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip |
| CN103628132B (en) * | 2012-08-21 | 2017-04-12 | 国硕科技工业股份有限公司 | Polycrystalline silicon chip, polycrystalline silicon ingot and method for manufacturing polycrystalline silicon ingot |
| CN103806096B (en) * | 2012-11-15 | 2016-09-07 | 茂迪股份有限公司 | The packing method of crucible silicon material |
| CN102995105B (en) * | 2012-12-04 | 2015-04-22 | 英利集团有限公司 | Ingot-casting polycrystalline furnace and heat-dissipation bottom plate thereof |
| CN104250850A (en) * | 2013-06-25 | 2014-12-31 | 镇江荣德新能源科技有限公司 | Quartz crucible, making method thereof, and special die therefor |
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2009
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI465615B (en) * | 2012-08-21 | 2014-12-21 | Gigastorage Corp | Multicrystalline silicon wafer, multicrystalline silicon ingot, and method for manufacturing multicrystalline silicon ingot |
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