CN101935868A - Crucible for growing large-grain cast polycrystalline silicon - Google Patents
Crucible for growing large-grain cast polycrystalline silicon Download PDFInfo
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- CN101935868A CN101935868A CN 201010284751 CN201010284751A CN101935868A CN 101935868 A CN101935868 A CN 101935868A CN 201010284751 CN201010284751 CN 201010284751 CN 201010284751 A CN201010284751 A CN 201010284751A CN 101935868 A CN101935868 A CN 101935868A
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- crucible
- polycrystalline silicon
- inverted pyramid
- grain cast
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Abstract
The invention discloses a crucible for growing large-grain cast polycrystalline silicon. An outer wall at the bottom of the crucible has a square structure, and an inner wall of the bottom of the crucible has an inverted pyramid structure. The crucible of the invention has the advantages of ensuring that silicon melt forms as less crystal nucleuses as possible at an initial nucleus forming stage, effectively improving a thermal field inside the crucible and growing high-quality large-grain cast polycrystalline silicon.
Description
Technical field
The invention belongs to the solar photovoltaic technology field, be specifically related to a kind of crucible of the big crystal grain casting polycrystalline silicon that is used to grow.
Background technology
Highdensity crystal boundary is one of principal element that influences casting polycrystalline silicon solar cell efficiency of conversion.
Crystal boundary in the casting polycrystalline silicon is mainly derived from crystal growth phase.Therefore, the big crystal grain casting polycrystalline silicon of growing high-quality, reducing crystal boundary density is the focus that international photovoltaic circle is studied always.
Casting polycrystalline silicon mainly is the foundry engieering that utilizes directional freeze at present, growing crystal silicon materials in square crucible, it is easy to grow, but because the area in forming core zone is bigger, the nucleation number is many, the polysilicon grain that grows is tiny, and crystal boundary density height has influenced the efficiency of conversion of casting polycrystalline silicon solar cell.Therefore, seeking a kind of novel crucible of check figure purpose that can be reduced to has very important significance for development and application tool low-cost, high efficiency casting polycrystalline silicon solar cell.
Summary of the invention
The invention provides a kind of crucible of the big crystal grain casting polycrystalline silicon that is used to grow, help silicon melt and form the least possible nucleus, and effectively improve the thermal field of crucible inside, grow the casting polycrystalline silicon of high-quality big crystal grain in the initial forming core stage.
A kind of crucible of the big crystal grain casting polycrystalline silicon that is used to grow, the outer wall of the bottom of described crucible is a square structure, the bottom interior wall of described crucible is several successive inverted pyramid structures.Described several are more than two.
In the practical application, according to the size of actual crucible size, the number of inverted pyramid structure also can be one, and at this moment, the bottom interior wall of described crucible is an inverted pyramid structure.
Preferably, the height of described each inverted pyramid is 5～50mm, and the angle of central lateral plane is 90 °～150 °.
Preferably, the material of described crucible is quartz or graphite, and the purity of described quartz is more than 99.9%, and the purity of described graphite is more than 99.9%, to reduce the pollution to silicon crystal as far as possible.Take among the present invention the inwall of crucible bottom is made as inverted pyramid structure, reduced the area in initial forming core zone, form the least possible several nucleus in the narrow bottom of inverted pyramid during crystal growth, these nucleus are eliminated through how much again, grow the casting polycrystalline silicon of big crystal grain at last.In addition, the thermal conductivity of the projecting crucible of each inverted pyramid bottom silicon crystalline thermal conductivity helps the dimpling of solid-liquid interface, thereby grows high-quality crystalline silicon material during crystal growth.
Description of drawings
Fig. 1 is the present invention's be used to grow vertical view of crucible of big crystal grain casting polycrystalline silicon;
Fig. 2 is the present invention's be used to grow center section plan of crucible of big crystal grain casting polycrystalline silicon.
Embodiment
Describe the present invention in detail below in conjunction with embodiment and accompanying drawing, but the present invention is not limited to this.
Embodiment 1:
The polycrystalline silicon raw material of 240kg is placed above-mentioned crucible 1, mix the doping agent boron of 20mg then, shove charge; Furnace chamber is evacuated, uses Ar gas, be heated to gradually and melt polycrystalline silicon raw material and doping agent more than 1420 ℃ as protection gas; At last, feed water coolant in crucible bottom and carry out heat exchange, silicon melt is eliminated through geometry from each inverted pyramid pinnacle of a pagoda forming core of crucible bottom, and in certain several nucleus directional freeze crystallization, it is 6 * 10 that casting forms boron concentration
15/ cm
3The big crystal grain of column.
The grain-size of the casting polycrystalline silicon sheet that present embodiment obtains is all greater than 4cm
2, minority carrier life time is more than 3 microseconds, and is higher more than 0.5 times than conventional cast polysilicon chip.
Embodiment 2:
The polycrystalline silicon raw material of 240kg is placed above-mentioned crucible 1, mix the doping agent boron of 20mg then, shove charge; Furnace chamber is evacuated, uses Ar gas, be heated to gradually and melt polycrystalline silicon raw material and doping agent more than 1420 ℃ as protection gas; At last, promote stay-warm case, silicon melt is eliminated through geometry from each inverted pyramid pinnacle of a pagoda forming core of crucible bottom, and in certain several nucleus directional freeze crystallization, it is 6 * 10 that casting forms boron concentration
15/ cm
3The big crystal grain of column.
The grain-size of the casting polycrystalline silicon sheet that present embodiment obtains is all greater than 4cm
2, minority carrier life time is more than 3 microseconds, and is higher more than 0.5 times than conventional cast polysilicon chip.
Below only be concrete application case of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalent variations or equivalent transformation and the technical scheme that forms all drop within the rights protection scope of the present invention.
Claims (5)
1. the crucible of the big crystal grain casting polycrystalline silicon that is used to grow, it is characterized in that: the outer wall of the bottom of described crucible is a square structure, the bottom interior wall of described crucible is several successive inverted pyramid structures.
2. crucible as claimed in claim 1 is characterized in that: the height of described each inverted pyramid is 5～50mm, and the angle of central lateral plane is 90 °～150 °.
3. crucible as claimed in claim 1 is characterized in that: the material of described crucible is quartz or graphite.
4. crucible as claimed in claim 3 is characterized in that: the purity of described quartz is more than 99.9%.
5. crucible as claimed in claim 3 is characterized in that: the purity of described graphite is more than 99.9%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010284751 CN101935868A (en) | 2010-09-17 | 2010-09-17 | Crucible for growing large-grain cast polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010284751 CN101935868A (en) | 2010-09-17 | 2010-09-17 | Crucible for growing large-grain cast polycrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101935868A true CN101935868A (en) | 2011-01-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN 201010284751 Pending CN101935868A (en) | 2010-09-17 | 2010-09-17 | Crucible for growing large-grain cast polycrystalline silicon |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN103088418A (en) * | 2011-11-01 | 2013-05-08 | 昆山中辰矽晶有限公司 | Crystalline silicon ingot and its making method |
| CN103255475A (en) * | 2012-02-15 | 2013-08-21 | 昆山中辰矽晶有限公司 | Silicon crystal ingot containing nucleation promoting particles and method for producing same |
| CN103361720A (en) * | 2013-08-05 | 2013-10-23 | 英利集团有限公司 | Crucible used for manufacturing polysilicon ingot |
| CN105316762A (en) * | 2015-11-13 | 2016-02-10 | 江苏美科硅能源有限公司 | Preparation method of low-attenuation and high-efficiency N-type mono-like |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597792A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | Under nitrogen, cast the method for the controlled doped polysilicon of nitrogen concentration |
| CN101597790A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The method of preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen |
| CN101597791A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | Directional solidification casting polycrystalline silicon of nitrating and preparation method thereof |
| CN101597793A (en) * | 2009-07-02 | 2009-12-09 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crucible of growing polycrystalline silicon ingot |
| CN101654805A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction |
-
2010
- 2010-09-17 CN CN 201010284751 patent/CN101935868A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597792A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | Under nitrogen, cast the method for the controlled doped polysilicon of nitrogen concentration |
| CN101597790A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The method of preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen |
| CN101597791A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | Directional solidification casting polycrystalline silicon of nitrating and preparation method thereof |
| CN101597793A (en) * | 2009-07-02 | 2009-12-09 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crucible of growing polycrystalline silicon ingot |
| CN101654805A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103088418A (en) * | 2011-11-01 | 2013-05-08 | 昆山中辰矽晶有限公司 | Crystalline silicon ingot and its making method |
| CN103088418B (en) * | 2011-11-01 | 2015-07-08 | 昆山中辰矽晶有限公司 | Crystalline silicon ingot and its making method |
| CN103255475A (en) * | 2012-02-15 | 2013-08-21 | 昆山中辰矽晶有限公司 | Silicon crystal ingot containing nucleation promoting particles and method for producing same |
| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN102534772B (en) * | 2012-02-28 | 2014-11-05 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN103361720A (en) * | 2013-08-05 | 2013-10-23 | 英利集团有限公司 | Crucible used for manufacturing polysilicon ingot |
| CN105316762A (en) * | 2015-11-13 | 2016-02-10 | 江苏美科硅能源有限公司 | Preparation method of low-attenuation and high-efficiency N-type mono-like |
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Application publication date: 20110105 |