CN103361720A - Crucible used for manufacturing polysilicon ingot - Google Patents
Crucible used for manufacturing polysilicon ingot Download PDFInfo
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- CN103361720A CN103361720A CN2013103370434A CN201310337043A CN103361720A CN 103361720 A CN103361720 A CN 103361720A CN 2013103370434 A CN2013103370434 A CN 2013103370434A CN 201310337043 A CN201310337043 A CN 201310337043A CN 103361720 A CN103361720 A CN 103361720A
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- crucible
- crucible body
- silicon ingot
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Abstract
The invention provides a crucible used for manufacturing a polysilicon ingot. The crucible used for manufacturing the polysilicon ingot comprises a crucible body, wherein the bottom of the crucible body contacting with a silicon material is uneven. According to the invention, since the bottom of the crucible body is uneven, lateral growth of a crystal nucleus is restricted by humps on the bottom of the crucible body during nucleation process when the crucible is used for manufacturing the polysilicon ingot, and the crystal nucleus cannot continue growing laterally because of restriction of the humps; thus, dendritic growth is inhibited, the quality of the manufactured polysilicon ingot is improved, and production cost of an enterprise is reduced.
Description
Technical field
The present invention relates to make the apparatus field of polycrystal silicon ingot, more specifically, relate to a kind of crucible for the manufacture of polycrystal silicon ingot.
Background technology
The bottom surface of the crucible of common manufacturing polycrystal silicon ingot is the plane, and the polycrystalline cast ingot nucleation stage can be in crucible bottom optional position nucleation and laterally growing up, and grain size is uncontrolled, is unfavorable for suppressing dendritic growth, and grain size differs, and homogeneity is bad.
In the prior art, normally spread seed crystal control nucleation in crucible bottom.For example, spread the fragment seed crystal in crucible bottom.Guarantee during material that seed crystal not exclusively melts, nucleation process is carried out in seed crystal face, and the chip size of bottom is basically identical, can form on this basis uniform little crystal grain.Yet, for the control nucleation need to guarantee that incompleteization of seed crystal is complete, material technique relative complex, then cause seed crystalization complete if make mistakes, grain size out of hand and inhomogeneity effect, in addition, seed crystal has not been changed can increase bottom red sector height, reduces utilization rate of silicon ingot, increases cost.
Summary of the invention
The present invention aims to provide a kind of crucible for the manufacture of polycrystal silicon ingot, can suppress the growth of the dendrite of polycrystal silicon ingot.
For solving the problems of the technologies described above, according to an aspect of the present invention, provide a kind of crucible for the manufacture of polycrystal silicon ingot, comprise the crucible body, the bottom that contacts with the silicon material of crucible body is uneven.
Further, the bottom of crucible body comprises a plurality of and the integrated a plurality of salient points of crucible body.
Further, a plurality of salient points are evenly arranged in the bottom of crucible body.
Further, the bottom indentation structure of crucible body.
Further, the bottom of crucible body is provided with a plurality of frameworks, and a plurality of frameworks make the bottom uneven.
Further, the bottom of crucible body is square structure, and framework is square frame, and a plurality of square frames have identical center with square structure, and the length of side of a plurality of square frames from inside to outside evenly increases.
Further, the bottom of crucible body is provided with many crossing spacer bars, and many crossing spacer bars make the bottom uneven.
Further, many spacer bars form a plurality of grids.
Further, the inner side-wall of crucible body is uneven.
Use technical scheme of the present invention, comprise the crucible body for the manufacture of the crucible of polycrystal silicon ingot, the bottom that contacts with the silicon material of this crucible body is uneven.According to the present invention, the bottom of crucible body is rough, when utilizing crucible of the present invention to make polycrystal silicon ingot, in the nucleation process, the transverse growth of nucleus is subject to the restriction of the bottom protrusion of crucible body, the projection that is difficult to nucleus go beyond continues laterally to grow up, thereby plays the effect that suppresses dendritic growth.
Description of drawings
The accompanying drawing that consists of the application's a part is used to provide a further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used for explaining the present invention, do not consist of improper restriction of the present invention.In the accompanying drawings:
Fig. 1 has schematically shown the cut-away view of the first embodiment among the present invention;
Fig. 2 has schematically shown the vertical view of the first embodiment;
Fig. 3 has schematically shown the cut-away view of the second embodiment;
Fig. 4 has schematically shown the vertical view of the 3rd embodiment; And
Fig. 5 has schematically shown the vertical view of the 4th embodiment.
Description of reference numerals:
10, crucible body; 11, salient point; 12, square frame; 13, spacer bar.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated, but the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
Terminological interpretation:
Crucible: being made of quartz material, is the container of silicon ingot.
Referring to shown in Figure 1, according to the first embodiment of the present invention, comprise crucible body 10 for the manufacture of the crucible of polycrystal silicon ingot, the bottom that contacts with the silicon material of this crucible body 10 is uneven.In the present embodiment, the bottom of crucible body 10 is rough, when utilizing the crucible manufacturing polycrystal silicon ingot of present embodiment, in the nucleation process, the transverse growth of nucleus is subject to the restriction of the bottom protrusion of crucible body 10, the projection that is difficult to nucleus go beyond continues laterally to grow up, thereby plays the effect that suppresses dendritic growth.
Preferably, the uneven (not shown) of the inner side-wall of crucible body 10 can further prevent the growth of dendrite.
In conjunction with illustrated in figures 1 and 2, in an embodiment, the bottom comprises a plurality of and crucible body 10 integrated a plurality of salient points 11, and the bottom that is arranged so that whole crucible of salient point 11 is uneven, can suppress the growth of dendrite.Preferably, a plurality of salient points 11 are evenly arranged in the bottom, like this can be so that the size of crystal grain be even, and the quality of Effective Raise polycrystal silicon ingot.
Referring to shown in Figure 3, according to a second embodiment of the present invention, the bottom indentation structure of crucible body 10.In the present embodiment, laciniation is so that the bottom of crucible becomes uneven, thus the growth of inhibition dendrite, and the quality of raising polycrystal silicon ingot reduces enterprise cost.
Referring to shown in Figure 4, a third embodiment in accordance with the invention, the bottom of crucible body 10 is provided with a plurality of frameworks, and a plurality of frameworks make the bottom of crucible body 10 uneven, thereby suppress the growth of dendrite.Preferably, the bottom of crucible body 10 is square structure, and framework is square frame 12, and a plurality of square frames 12 have identical center with square structure, and the length of side of a plurality of square frame 12 from inside to outside evenly increases.So that the size of nucleus evenly, improve the quality of polycrystal silicon ingot.Preferably, a plurality of square frames 12 are one-body molded with crucible body 10, need not again crucible bottom to be carried out unnecessary manufacturing procedure and just can obtain the crucible for the manufacture of polycrystal silicon ingot of the present invention, reduced the production cost of enterprise.
Referring to shown in Figure 5, a fourth embodiment in accordance with the invention, the bottom of crucible body 10 is provided with many crossing spacer bars 13, and many crossing spacer bars 13 make the bottom uneven, suppress the growth of dendrite.Preferably, many spacer bars 13 form a plurality of grids, make the homogeneous grain size of polycrystal silicon ingot, the quality of Effective Raise polycrystal silicon ingot.
As can be seen from the above description, the above embodiments of the present invention have realized following technique effect:
Crucible for the manufacture of polycrystal silicon ingot according to the present invention comprises crucible, and in the nucleation process, the transverse growth of nucleus is subject to the restriction of crucible projection, and nucleus is difficult to go beyond projection to be continued laterally to grow up, thereby plays the effect that suppresses dendritic growth and control grain size.The bottom that is evenly arranged in crucible of a plurality of salient points, square frame and spacer bar like this can be so that the size of crystal grain be even, and the quality of Effective Raise polycrystal silicon ingot reduces the production cost of enterprise.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the crucible for the manufacture of polycrystal silicon ingot is characterized in that, comprises crucible body (10), and the bottom that contacts with the silicon material of described crucible body (10) is uneven.
2. the crucible for the manufacture of polycrystal silicon ingot according to claim 1 is characterized in that, the described bottom of described crucible body (10) comprises the integrated a plurality of salient points of a plurality of and described crucible body (10) (11).
3. the crucible for the manufacture of polycrystal silicon ingot according to claim 2 is characterized in that, a plurality of described salient points (11) are evenly arranged in the described bottom of described crucible body (10).
4. the crucible for the manufacture of polycrystal silicon ingot according to claim 1 is characterized in that, the described bottom indentation structure of described crucible body (10).
5. the crucible for the manufacture of polycrystal silicon ingot according to claim 1 is characterized in that, the described bottom of described crucible body (10) is provided with a plurality of frameworks, and a plurality of described frameworks make described bottom uneven.
6. the crucible for the manufacture of polycrystal silicon ingot according to claim 5, it is characterized in that, the described bottom of described crucible body (10) is square structure, described framework is square frame (12), a plurality of described square frames (12) have identical center with described square structure, and the length of side of a plurality of described square frame (12) from inside to outside evenly increases.
7. the crucible for the manufacture of polycrystal silicon ingot according to claim 1 is characterized in that, the described bottom of described crucible body (10) is provided with many crossing spacer bars (13), and many crossing described spacer bars (13) make described bottom uneven.
8. the crucible for the manufacture of polycrystal silicon ingot according to claim 7 is characterized in that, many described spacer bars (13) form a plurality of grids.
9. each described crucible for the manufacture of polycrystal silicon ingot in 8 according to claim 1 is characterized in that the inner side-wall of described crucible body (10) is uneven.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103370434A CN103361720A (en) | 2013-08-05 | 2013-08-05 | Crucible used for manufacturing polysilicon ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103370434A CN103361720A (en) | 2013-08-05 | 2013-08-05 | Crucible used for manufacturing polysilicon ingot |
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| Publication Number | Publication Date |
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| CN103361720A true CN103361720A (en) | 2013-10-23 |
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| CN2013103370434A Pending CN103361720A (en) | 2013-08-05 | 2013-08-05 | Crucible used for manufacturing polysilicon ingot |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914203A (en) * | 2018-07-18 | 2018-11-30 | 成都斯力康科技股份有限公司 | Metallic silicon refines deep impurity-removing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002107063A (en) * | 2000-10-04 | 2002-04-10 | Sharp Corp | Crucible for growth of crystal, and method for growth of crystal |
| CN101935868A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Crucible for growing large-grain cast polycrystalline silicon |
| CN102766904A (en) * | 2012-08-15 | 2012-11-07 | 常熟华融太阳能新型材料有限公司 | Silica ceramic crucible |
| CN103088417A (en) * | 2013-01-22 | 2013-05-08 | 晶海洋半导体材料（东海）有限公司 | High-efficiency crucible for polycrystal ingot casting and preparation method thereof |
-
2013
- 2013-08-05 CN CN2013103370434A patent/CN103361720A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002107063A (en) * | 2000-10-04 | 2002-04-10 | Sharp Corp | Crucible for growth of crystal, and method for growth of crystal |
| CN101935868A (en) * | 2010-09-17 | 2011-01-05 | 浙江大学 | Crucible for growing large-grain cast polycrystalline silicon |
| CN102766904A (en) * | 2012-08-15 | 2012-11-07 | 常熟华融太阳能新型材料有限公司 | Silica ceramic crucible |
| CN103088417A (en) * | 2013-01-22 | 2013-05-08 | 晶海洋半导体材料（东海）有限公司 | High-efficiency crucible for polycrystal ingot casting and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914203A (en) * | 2018-07-18 | 2018-11-30 | 成都斯力康科技股份有限公司 | Metallic silicon refines deep impurity-removing method |
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Application publication date: 20131023 |