CN106929919A - A kind of growing silicon carbice crystals crucible - Google Patents
A kind of growing silicon carbice crystals crucible Download PDFInfo
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- CN106929919A CN106929919A CN201511006394.2A CN201511006394A CN106929919A CN 106929919 A CN106929919 A CN 106929919A CN 201511006394 A CN201511006394 A CN 201511006394A CN 106929919 A CN106929919 A CN 106929919A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Abstract
The present invention relates to a kind of growing silicon carbice crystals crucible, including：Raw material cavity for holding SiC crystal growth raw material；Relatively movably it is nested in the top of the raw material cavity to form the growth chamber in crystal structure region, the growth chamber possesses growth room and the seed crystal support on the roof of the growth room.Crucible of the invention can adjust the distance of plane of crystal and raw material surface, the stability of keeping temperature, so as to grow the growing silicon carbice crystals crucible of high-quality carborundum crystals in growth course.
Description
Technical field
The invention belongs to field of crystal growth, it is related to a kind of use physical carbon burdening to grow the crucible structure of SiC crystal, in particular it relates to a kind of growing silicon carbice crystals crucible.
Background technology
SiC crystal has the series of advantages such as energy gap is big, critical breakdown strength is big, saturation drift velocity is high, thermal coefficient of expansion is low, capability of resistance to radiation is strong, it is the new generation of semiconductor material for receiving much concern, is with a wide range of applications in application aspects such as microwave radio, power device, LED substrates.Especially nearly ten years, either SiC crystal material or related device application study all achieve tremendous development, and SiC crystal device steps into the industries such as power electronics, new-energy automobile, LED illumination.
SiC crystal growth generally uses physical carbon burdening（Physical vapor transport, PVT）, its general principle is as shown in Figure 4.SiC crystal growth uses induction heater, crystal growth in graphite crucible 105, SiC raw materials 104 are generally placed in the growth room bottom of crucible 105, seed crystal 103 is fixed on the seed crystal support 102 at the top of growth room, the periphery of graphite crucible 105 is enclosed with insulation material as heat-insulation layer 106, and thermometer hole 101 is provided with the top of the heat-insulation layer 106.Built using the temperature field of crystal growth by adjusting position and insulation material structure of the crucible 105 in induction coil, simultaneously in growth course precise control growth room temperature and pressure condition, SiC raw materials 104 are made to be distilled from the bottom of crucible 105, rising to carries out accumulated growth on seed crystal 103, finally obtain SiC single crystal.
Fig. 4 shows that existing SiC crystal grows the structure of used crucible 105, wherein, in closed graphite crucible 105, seed crystal 103 is relatively fixed with the position of SiC raw materials 104.Although being the structure design of closed fixation for example, crucible Inner Constitution and seed crystal holder structure etc. are different in the file such as Patents 200680013157.1,200580032490.2,201320740468.5.
However, many experiments find, in crystal growth in early days, due to the necessary process heated up with step-down technology controlling and process, crucible inside has that certain thermograde is unstable and gaseous component transports deficiency, causes seeded sublimation to be destroyed, and a large amount of defects are introduced in crystal growth.In addition, with the carrying out of crystal growing process, crystal progressive additive, plane of crystal reduces therewith with the spacing on raw material surface, this also causes crucible internal temperature gradient to change, and often causes many types of derivative and other crystal defects to produce.
Therefore, design a kind of new crucible structure, with reference to corresponding crystal growth technique control technology, seed crystal position can be adjusted, seeded sublimation is avoided to destroy in crystal inoculation growth phase, and the distance of plane of crystal and raw material surface can be adjusted in growth course, the stability of keeping temperature is particularly significant for growth high-quality SiC crystal.
The content of the invention
In view of present on problem, the technical problems to be solved by the invention are to provide a kind of distance that plane of crystal and raw material surface can be adjusted in growth course, the stability of keeping temperature, so as to grow the growing silicon carbice crystals crucible of high-quality carborundum crystals.
In order to solve the above-mentioned technical problem, growing silicon carbice crystals crucible provided by the present invention, including：Raw material cavity for holding SiC crystal growth raw material；Relatively movably it is nested in the top of the raw material cavity to form the growth chamber in crystal structure region, the growth chamber possesses growth room and the seed crystal support on the roof of the growth room.
According to the present invention, growing silicon carbice crystals crucible is divided into two parts, and top is growth chamber, including seed crystal support, growth room, is crystal structure region；Bottom is raw material cavity, for holding SiC crystal growth raw material.Growth chamber combines composition crucible for crystal growth, growth chamber and the relative position controllable of raw material cavity with raw material cavity, thus adjusts seed crystal position in crystal growth early stage, it is to avoid seed crystal is destroyed under unstable temperature gradient conditions；The distance between crystal growth plane and raw material can be adjusted in crystal growing process, the crystal growth condition and growth course of stabilization is maintained, high-quality carborundum crystals are grown.
Also, in the present invention, or, the raw material cavity possesses superposed guide cylinder and the raw material receiving portion positioned at bottom, and the growth chamber is nested in the guide cylinder.
According to the present invention, guide cylinder is mainly used in being assembled with growth chamber, plays motion guide effect, while it is also used for growing the structure of indoor temperature field, also can be used as the outside heater of growth chamber.Growth chamber is nested in the guide cylinder on raw material cavity top, both can relative to slidably and rotate.
Also, in the present invention, or, there is gap between the outer surface of the side wall of the growth room and the inner surface of the guide cylinder, the gap is 0.1mm-3mm.
According to the present invention, be advantageously implemented both growth chamber and guide cylinder relative to slidably and rotating.
Also, in the present invention, or, the raw material cavity is also equipped with being located at annular diversion platform between the guide cylinder and the raw material receiving portion.
According to the present invention, the raw material gaseous component distilled by setting the bootable material area of diversion platform is transported to the central area of growth room, realizes crystal continued propagation, it is to avoid gap effusion crucible of the gaseous component between growth chamber and guide cylinder, influences crystal growth.
Also, in the present invention, or, the bottom of the diversion platform is formed as ramp structure.
According to the present invention, the raw material gaseous component that can be further conducive to guiding to distil is transported to the central area of growth room.
Also, in the present invention, or, the side wall of the growth room is formed as solid construction, hollow-core construction or expanding structure.
According to the present invention, the side wall of growth room is formed as solid construction, hollow-core construction or expanding structure to meet the needs such as thermograde regulation, habit control.
Also, in the present invention, or, the connecting portion being connected with the upper shift mechanism of growth furnace is provided with the top of the growth chamber.
According to the present invention, by being provided with the connecting portion being connected with the upper shift mechanism of growth furnace at the top of growth chamber, can realize the elevating movement of growth chamber and rotate by the pull lift action of upper shift mechanism to control.
Also, in the present invention, or, the raw material cavity is placed on the bottom saddle of growth furnace, and the raw material cavity is lifted and rotated with the bottom saddle.
According to the present invention, the lifting of raw material cavity can be realized in crystal growing process and control is rotated.
Also, in the present invention, or, the material of the crucible is graphite, tantalum, niobium, ramet or carbonization niobium material.
According to the present invention, crucible is manufactured using exotic materials such as graphite, tantalum, niobium, ramet or niobium carbides, the heat-resisting quantity of crucible can be improved.
Also, in the present invention, or, when the material of the crucible is graphite material, surface coating tantalum, niobium, tungsten, ramet or niobium carbide coating in the crucible.
According to the present invention, when the material of crucible is graphite material, the various high-temperaure coatings such as surface coating tantalum, niobium, tungsten, ramet or niobium carbide in crucible, are used to suppress or avoid graphite crucible from being destroyed in crystal growing process, it is ensured that crystal growing process stabilization is carried out.
According to following specific embodiments and refer to the attached drawing, the above of the invention and other objects, features and advantages are better understood with.
Brief description of the drawings
Fig. 1 shows the structural representation of the SiC crystal growth crucible according to an embodiment of the invention；
Fig. 2 shows the growing system structural representation that crystal growth is carried out using crucible shown in Fig. 1；
Fig. 3 shows the structural representation of the SiC crystal growth crucible according to another embodiment of the invention；
Fig. 4 shows the growing system structural representation for growing SiC crystal using PVT methods in the prior art；
Reference：
1st, growth chamber,
2nd, raw material cavity,
3rd, seed crystal support,
4th, growth room,
5,51, growth room's side neck,
6th, guide cylinder,
7th, diversion platform,
8th, raw material,
9th, connecting portion,
10th, body of heater is grown,
11st, upper lifting rod,
12nd, bottom saddle,
13rd, upper lifting part,
14th, Lift Part,
15th, elevating lever,
16th, insulation material,
17th, coil,
101st, thermometer hole,
102nd, seed crystal support
103rd, seed crystal,
104th, SiC raw materials,
105th, crucible,
106th, heat-insulation layer.
Specific embodiment
The present invention is further illustrated below in conjunction with accompanying drawing and following implementation methods, it should be appreciated that accompanying drawing and following implementation methods are merely to illustrate the present invention, are not intended to limit the present invention.
Usually used seed crystal and the relatively-stationary crucible structure of feed location in being grown for current SiC crystal, to avoid it in crystal growth early stage seed crystal due to the unstable destructible in temperature field, and the shortcoming that seed crystal cannot be adjusted with raw material distance in growth course, it is of the invention to devise a kind of crucible structure of new growth SiC crystal.It can realize seed crystal with reference to the corresponding mechanical mechanism of growth furnace（And the crystal in growth）Self-movement with raw material is controlled.Therefore, the invention provides a kind of growing silicon carbice crystals crucible, including：Raw material cavity for holding SiC crystal growth raw material；Relatively movably it is nested in the top of the raw material cavity to form the growth chamber in crystal structure region, the growth chamber possesses growth room and the seed crystal support on the roof of the growth room.
Specifically, the SiC crystal growth crucible is mainly made up of upper and lower two parts, and top is referred to as growth chamber, and critical piece includes seed crystal support, growth room, and the growth chamber is crystal structure region.The bottom of crucible is raw material cavity, for holding SiC crystal growth raw material.
Also, two parts up and down of crucible --- i.e. growth chamber and raw material cavity, need to be applied in combination when for crystal growth, and wherein growth chamber relatively movably can be nested in the upper area of raw material cavity.The raw material cavity can possess superposed guide cylinder and the raw material receiving portion positioned at bottom, and above-mentioned growth chamber relatively movably can be nested in guide cylinder.I.e., when growth chamber is combined with raw material cavity, growth chamber can lifting moving and rotation in guide cylinder region.
Preferably, the outer wall of growth chamber and raw material cavity top（Guide cylinder）Between inwall, i.e., keep small gap between the outer surface of side wall of growth room and the inner surface of guide cylinder, with ensure both can relative to slidably and rotate, general gap be 0.1mm-3mm.
Additionally, the raw material cavity middle part inner wall area between guide cylinder and raw material receiving portion can be provided with annular diversion platform, diversion platform bottom is formed as ramp structure, is transported to the central area of growth room with the gaseous component for guiding material area to distil.
Also, the growth room side wall of tubular（That is growth room's side neck）Can be needed according to crystal growth temperature and be designed to solid or hollow-core construction and other shapes, to meet the needs such as thermograde regulation, habit control.
In addition, the upper shift mechanism with growth furnace can be provided with the top of the growth chamber of the crucible, for example, the connecting portion of the components such as lifting rod connection is gone up, the upper shift mechanism of growth furnace thus can be coordinated to realize elevating movement and the rotating function of growth chamber.
Usual raw material cavity is placed on growth furnace bottom saddle, it is preferable that for the growth furnace that bottom saddle has lifting and spinfunction, it is also possible to the lifting in raw material for crucible chamber is realized in crystal growing process and control is rotated.
The material of crucible of the present invention is generally graphite material, also can be using exotic materials such as tantalum, niobium, ramet, niobium carbides.When using machining graphite said structure crucible, also various high-temperaure coatings, such as tantalum, niobium, tungsten and ramet, niobium carbide material can be applied on graphite crucible surface.
Using crucible of the invention, with reference to corresponding growth technique, on the one hand in the growth early stage temperature rise period, growth chamber can be placed in higher position, make seed crystal away from high-temperature region, buck stage seeded sublimation is avoided to destroy, drop seed crystal is down to correct position when being warming up to suitable temperature, being depressurized to pressure needed for growth, starts crystal growth；On the other hand, in crystal growth phase, continue slowly to raise growth chamber position so that crystal growth plane keeps stabilizing distance with raw material, to reach the purpose and effect that make crystal growth more stable.
Specific embodiment of the invention is described in detail below in conjunction with accompanying drawing.
Fig. 1 shows the SiC crystal growth crucible according to an embodiment of the invention.As shown in figure 1, the crucible of this embodiment can be broadly divided into upper and lower two parts, top is growth chamber 1, including seed crystal support 3, growth room 4, growth room's side neck 5, and the growth chamber 1 is vapor transportation and crystal structure region.The bottom of crucible is raw material cavity 2, is mainly used in holding SiC crystal growth raw material 8, and guide cylinder 6 is provided with the upper end of the raw material cavity 2.
Above-mentioned growth chamber 1 constitutes the crucible that growth SiC crystal is used after being combined with raw material cavity 2, as shown in Figure 1, growth chamber 1 is nested in raw material cavity top guide cylinder 6, there is small gap between the two, and the inwall of the outer wall and guide cylinder 6 to growth chamber 1 carries out appropriate treatment so that its surface is smooth, ensure both can relative to slidably and rotate, gap generally described above be 0.1mm-3mm.
Fig. 2 shows the growing system structural representation that crystal growth is carried out using crucible shown in Fig. 1.As shown in Fig. 2 above-mentioned crucible is positioned on the bottom saddle 12 in growth body of heater 10, and surrounded by insulation material 16, surrounding is also full of induction coil 17, and crucible is heated by the coil 17.As depicted in figs. 1 and 2, to realize the control lifting moving of growth chamber 1 and rotation, the corresponding mechanical component to growth furnace is provided with the top of growth chamber 1, for example, goes up the connecting portion 9 that lifting rod 11 is connected, upper lifting part 13 drives the connecting portion 9 to move via upper lifting rod 11.Also as shown in figure 1, growth room's side neck 5 is formed as solid construction.
The top of raw material cavity 2 is guide cylinder 6, is mainly used in being assembled with growth chamber 1, plays motion guide effect, while the structure in temperature field in growth room 4 is also used for, also can be used as the outside heater of growth chamber.The height and internal diameter and outside dimension of guide cylinder 6 are combined closely the size of growth chamber 1, consider that temperature gradient conditions need to be designed simultaneously, it can highly be more than, less than or equal to the height of growth chamber 1, this is related to crucible internal temperature field structure, also it is relevant with crystal growth technique condition, it is affected by many factors, can typically be determined by experiment.
As shown in Figure 1, the middle part inner wall area of raw material cavity 2 is that the lower end of guide cylinder 6 has annular diversion platform 7, the bottom of diversion platform 7 is ramp structure, gaseous component for guiding raw material 8 to distil is transported to the central area of growth room 4, realize crystal continued propagation, gap effusion crucible of the gaseous component between growth chamber 1 and guide cylinder 6 is avoided, crystal growth is influenceed.Further, it is the structure of triangle that diversion platform 7 is usually formed as the section shown in Fig. 1, may be designed as other shapes, it is therefore intended that guide gaseous component transports direction.
As shown in Figure 2, raw material cavity 2 is placed on growth furnace bottom saddle 12, for the growth furnace that bottom saddle has lifting and spinfunction, it is also possible to the lifting in raw material for crucible chamber 2 is realized in crystal growing process and control is rotated, its motion mode is depending on crystal growth technique requirement.For example, as shown in Fig. 2 bottom saddle 12 is connected by elevating lever 15 with Lift Part 14, motion is driven by Lift Part 14.
The crucible material of this embodiment is generally graphite material, also can be using exotic materials such as tantalum, ramet, niobium carbides.
Further, when crucible is processed using graphite material, various high-temperaure coatings can be applied on graphite crucible surface or part surface, the coating material such as material such as tantalum, niobium, tungsten and ramet, niobium carbide, it is used to suppress or avoids graphite crucible from being destroyed in crystal growing process, it is ensured that crystal growing process stabilization is carried out.
Fig. 3 shows the SiC crystal growth crucible according to another embodiment of the invention.As shown in figure 3, in this embodiment, growth room's side neck 51 is formed as hollow-core construction, in addition, the SiC crystal growth crucible shown in Fig. 3 is essentially identical with the embodiment of Fig. 1, and identical part is shown with same reference, and is not repeated.
But, the structure not limited to this of growth room's side neck of the invention, it is considered to the temperature field condition needed for building crystal growth are also designed to expanding structure and other shapes, to meet the needs such as thermograde regulation, habit control.
SiC crystal growth of the invention is further described with crucible below by way of specific embodiment.
Embodiment 1
Using high purity graphite material（Purity>99.9%）The SiC crystal growth crucible of structure as shown in Figure 1 is prepared, the outer wall of growth chamber 1 is 0.5mm with the gap of the inwall of guide cylinder 6.Concrete structure is as mentioned before.The lifting of growth chamber 1 can be controlled in crystal growing process using this structure crucible, in growth early stage crystal inoculation step control seed crystal position, the distance between crystal growth plane and raw material is adjusted in growth course, grow high-quality SiC crystal.
Embodiment 2
Using high purity graphite material（Purity>99.9%）The SiC crystal growth crucible of structure as shown in Figure 3 is prepared, wherein growth chamber 1 includes seed crystal support 3, growth room 4, has growth room's side neck 5 of cavity, and raw material cavity 2 includes guide cylinder 6, diversion platform 7, and inside can contain raw material 8.
In the present embodiment, growth room's side neck is formed as cavity structure, and to realize this design, growth chamber 1 is made up of multiple difference part assemblings.
Growth chamber 1 is nested in guide cylinder 6 when growth chamber 1 is combined with raw material cavity 2, and both gaps are 0.1mm, and the outer wall of growth chamber 1 and the inner wall surface of guide cylinder 6 be smooth, and both can be relative to slidably and rotating.
The top of growth chamber 1 is provided with the connecting portion being connected to the corresponding mechanical component of growth furnace.
Growth room's side neck 5 is formed as hollow-core construction, to improve the thermograde in growth room 4, especially radially thermograde.Under electromagnetic induction effect, the wall outer surface of graphite crucible be heating major part, heat from crucible wall to growth room's center conductive or radiation, when growth room's side neck be solid construction when, heat is oriented to inwall from side neck outer wall in thermo-conducting manner, then is radiated to growth room center；And when growth room's side neck is hollow-core construction, heat is oriented to inwall in the way of radiating from side neck outer wall, experiment shows that hollow-core construction slow down the speed of heat transfer, is conducive to building radial symmetry gradient smaller in growth room.
The guide cylinder 6 of raw material cavity 2 with growth chamber 1 there is identical height, i.e. growth chamber 1 to be positioned over when on diversion platform 7, and top surface and the top surface of guide cylinder 6 of growth chamber 1 maintain an equal level.The bottom of diversion platform 7 is ramp structure.
In the present embodiment, the cavity structure of growth room's side neck 5 is designed primarily for adjusting the radial symmetry gradient in growth room, controlled with reference to the design and growthing process parameter of related heat-insulation system, beneficial to further optimization crystal growing process control, grow high-quality SiC crystal.
Embodiment 3
Using tantalum（Metal simple-substance）（Purity>99.9%）The SiC crystal growth crucible of structure as shown in Figure 1 is prepared, concrete structure is with reference to described previously.The outer wall of growth chamber 1 is 1mm with the gap of the inwall of guide cylinder 6.The C element in graphite crucible can be avoided using tantalum crucible turns into the part C sources that SiC crystal grows, it is more beneficial for the control of gaseous component, the lifting of control growth chamber 1 in crystal growing process is also may be implemented in simultaneously, in growth early stage crystal inoculation step control seed crystal position, the distance between crystal growth plane and raw material is adjusted in growth course, high-quality SiC crystal is finally grown.
Under the objective for not departing from essential characteristic of the invention, the present invention can be presented as diversified forms, therefore the embodiment in the present invention is to be illustrative rather than definitive thereof, because the scope of the present invention is defined by the claims rather than is limited by specification, and all changes fallen in the scope defined in claim, or the full scope of equivalents of its scope for defining are understood to include in detail in the claims.
Claims (10)
1. a kind of growing silicon carbice crystals crucible, it is characterised in that including：
Raw material cavity for holding SiC crystal growth raw material；
Relatively movably it is nested in the top of the raw material cavity to form the growth chamber in crystal structure region, the growth chamber possesses growth room and the seed crystal support on the roof of the growth room.
2. growing silicon carbice crystals crucible according to claim 1, it is characterised in that the raw material cavity possesses superposed guide cylinder and the raw material receiving portion positioned at bottom, and the growth chamber is nested in the guide cylinder.
3. growing silicon carbice crystals crucible according to claim 2, it is characterised in that there is gap between the outer surface of the side wall of the growth room and the inner surface of the guide cylinder, the gap is 0.1mm-3mm.
4. growing silicon carbice crystals crucible according to claim 2, it is characterised in that the raw material cavity is also equipped with the annular diversion platform being located between the guide cylinder and the raw material receiving portion.
5. growing silicon carbice crystals crucible according to claim 4, it is characterised in that the bottom of the diversion platform is formed as ramp structure.
6. growing silicon carbice crystals crucible according to claim 1, it is characterised in that the side wall of the growth room is formed as solid construction, hollow-core construction or expanding structure.
7. growing silicon carbice crystals crucible according to claim 1, it is characterised in that the connecting portion being connected with the upper shift mechanism of growth furnace is provided with the top of the growth chamber.
8. growing silicon carbice crystals crucible according to claim 1, it is characterised in that the raw material cavity is placed on the bottom saddle of growth furnace, and the raw material cavity is lifted and rotated with the bottom saddle.
9. growing silicon carbice crystals crucible according to any one of claim 1 to 8, it is characterised in that the material of the crucible is graphite, tantalum, niobium, ramet or carbonization niobium material.
10. growing silicon carbice crystals crucible according to claim 9, it is characterised in that when the material of the crucible is graphite material, surface coating tantalum, niobium, tungsten, ramet or niobium carbide coating in the crucible.
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| CN201511006394.2A CN106929919A (en) | 2015-12-29 | 2015-12-29 | A kind of growing silicon carbice crystals crucible |
| PCT/CN2015/100284 WO2017113368A1 (en) | 2015-12-29 | 2015-12-31 | Crucible for growth of silicon carbide crystal |
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| CN108374197A (en) * | 2018-02-26 | 2018-08-07 | 西安理工大学 | A kind of graphite crucible increasing growing silicon carbice crystals length |
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| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
| WO2023217196A1 (en) * | 2022-05-12 | 2023-11-16 | 眉山博雅新材料股份有限公司 | Crystal growth device |
| CN117779178A (en) * | 2023-12-26 | 2024-03-29 | 通威微电子有限公司 | Silicon carbide crystal growth apparatus and method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308690A (en) * | 1998-07-14 | 2001-08-15 | 西门子公司 | Method and device for producing at least one silicon carbide monocrystal |
| CN1384892A (en) * | 1999-10-08 | 2002-12-11 | 克里公司 | Method and apparatus for growing silicon carbice crystals |
| CN101027433A (en) * | 2004-08-10 | 2007-08-29 | 克里公司 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| JP2008280196A (en) * | 2007-05-09 | 2008-11-20 | Matsushita Electric Ind Co Ltd | Method of fixing seed crystal |
| US7767022B1 (en) * | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
| CN102459718A (en) * | 2009-06-10 | 2012-05-16 | 株式会社普利司通 | Device for producing silicon carbide single crystals |
| CN202390579U (en) * | 2011-12-09 | 2012-08-22 | 北京有色金属研究总院 | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method |
| CN204417652U (en) * | 2014-12-11 | 2015-06-24 | 河北同光晶体有限公司 | For growing the plumbago crucible of SiC crystal |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5346821B2 (en) * | 2010-01-15 | 2013-11-20 | 株式会社ブリヂストン | Silicon carbide single crystal manufacturing equipment |
| CN202430332U (en) * | 2012-01-17 | 2012-09-12 | 山东天岳先进材料科技有限公司 | Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method |
| CN202643904U (en) * | 2012-04-01 | 2013-01-02 | 北京华进创威电子有限公司 | Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth |
| WO2013159083A1 (en) * | 2012-04-20 | 2013-10-24 | Ii-Vi Incorporated | LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS |
| CN204417639U (en) * | 2014-12-11 | 2015-06-24 | 河北同光晶体有限公司 | A kind of crucible for the preparation of sic raw material |
-
2015
- 2015-12-29 CN CN201511006394.2A patent/CN106929919A/en active Pending
- 2015-12-31 WO PCT/CN2015/100284 patent/WO2017113368A1/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308690A (en) * | 1998-07-14 | 2001-08-15 | 西门子公司 | Method and device for producing at least one silicon carbide monocrystal |
| CN1384892A (en) * | 1999-10-08 | 2002-12-11 | 克里公司 | Method and apparatus for growing silicon carbice crystals |
| CN101027433A (en) * | 2004-08-10 | 2007-08-29 | 克里公司 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| US7767022B1 (en) * | 2006-04-19 | 2010-08-03 | Ii-Vi Incorporated | Method of annealing a sublimation grown crystal |
| JP2008280196A (en) * | 2007-05-09 | 2008-11-20 | Matsushita Electric Ind Co Ltd | Method of fixing seed crystal |
| CN102459718A (en) * | 2009-06-10 | 2012-05-16 | 株式会社普利司通 | Device for producing silicon carbide single crystals |
| CN202390579U (en) * | 2011-12-09 | 2012-08-22 | 北京有色金属研究总院 | Graphite crucible for growing silicon carbide single crystal by using physic gaseous phase transport method |
| CN204417652U (en) * | 2014-12-11 | 2015-06-24 | 河北同光晶体有限公司 | For growing the plumbago crucible of SiC crystal |
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