CN202643904U - Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth - Google Patents
Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth Download PDFInfo
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- CN202643904U CN202643904U CN 201220134774 CN201220134774U CN202643904U CN 202643904 U CN202643904 U CN 202643904U CN 201220134774 CN201220134774 CN 201220134774 CN 201220134774 U CN201220134774 U CN 201220134774U CN 202643904 U CN202643904 U CN 202643904U
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- Prior art keywords
- crucible
- induction heating
- physical vapor
- heating physical
- transmission device
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 21
- 230000006698 induction Effects 0.000 title claims abstract description 19
- 230000005540 biological transmission Effects 0.000 title abstract 5
- 239000012808 vapor phase Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000004321 preservation Methods 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000009413 insulation Methods 0.000 abstract 2
- 239000012774 insulation material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a double-crucible induction heating physical vapor phase transmission device for monocrystalline growth, belongs to the technical field of monocrystalline growth and particularly relates to the induction heating physical vapor phase transmission device for monocrystalline growth. The double-crucible induction heating physical vapor phase transmission device for the monocrystalline growth comprises a thermal insulation barrel. Monocrystalline materials and seed crystals are arranged in an inner crucible which is arranged in an outer crucible arranged in the thermal insulation barrel. Compared with the prior art of a single crucible, the double-crucible induction heating physical vapor phase transmission device for the monocrystalline growth can not only greatly reduce consumption of high-melting-point crucible materials but also thermal insulation materials are not scrapped off when the inner crucible is taken out so as to prolong the service life of the thermal insulation materials.
Description
Technical field
The utility model belongs to the Crystal Growth Technique field, particularly relates to the device of induction heating physical vapor transport growing single-crystal.
Background technology
During induction heating physical vapor transport growing single-crystal, need to use materials with high melting point (such as high purity graphite, metal tantalum, tungsten etc.) to make crucible, be used for splendid attire material source (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface).Generally all be with a crucible (being designated hereinafter simply as " single crucible ") at present, not only made heating element, but also made growth chamber, relatively simple for structure.But in order to satisfy the requirement of heating and temperature, the crucible size that the size of single crucible need to be done more requiredly than simple charging is much larger, and when taking out the monocrystalline that generates, generally can only destroy crucible.Therefore, single crucible can only disposablely use, and this causes, and the consumption of high-melting-point crucible material is large, the crucible cost is high.In addition, single crucible come out of the stove at every turn the time easily rub the lagging material that some are close to its outer wall, again need to replenish during shove charge, even again process heat-preservation cylinder.
The utility model content
The technical problems to be solved in the utility model is to overcome the disposable use of crucible that has single crucible now and cause, the defective that cost is high, and a kind of pair of crucible device is provided, and outer crucible wherein can repeatedly use, easy to operate, cost.
In order to solve the problems of the technologies described above, the utility model provides following technical scheme:
The device of a kind of pair of crucible induction heating physical vapor transport growing single-crystal comprises heat-preservation cylinder, is provided with outer crucible in described heat-preservation cylinder, is provided with interior crucible in described outer crucible, and crystal raw material and seed crystal are positioned at crucible.
Described interior crucible is provided with for the crucible lid of placing seed crystal.
The utility model is applicable to the method for all induction heating physical vapor transport growing single-crystals, includes but not limited to silicon carbide, aluminium nitride.
The utility model device is to realize like this its function: during induction heating physical vapor transport growing single-crystal, use the coaxial materials with high melting point crucible (abbreviation " two crucible ") of inside and outside two covers, outer crucible is in order to satisfy the requirement of heating and temperature field, and size is larger; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and size is less.Interior crucible is placed on the outer crucible bottom coaxially, and two crucibles have the crucible lid to seal separately, and perhaps outer crucible also can not add the crucible lid, so that crucible in taking out.After growth finished, crucible in taking out from outer crucible was opened interior crucible, is taken out crystal ingot; And outer crucible is motionless, can repeatedly use.
Compare with the prior art of using single crucible, the utility model not only can greatly reduce the consumption of high-melting-point crucible material, and interior crucible can not rub lagging material when taking out, thereby has prolonged the work-ing life of lagging material.In a word, the utility model device can be simplified technique, reduce cost.
Description of drawings
Accompanying drawing is used to provide further understanding of the present utility model, and consists of the part of specification sheets, is used from explanation the utility model with embodiment one of the present utility model, does not consist of restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the structural representation of the two crucible devices of the utility model.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present utility model is described, should be appreciated that preferred embodiment described herein only is used for description and interpretation the utility model, and be not used in restriction the utility model.
Shown in Figure 1, the device of a kind of pair of crucible induction heating physical vapor transport growing single-crystal, comprise induction coil 4 and heat-preservation cylinder 1, in heat-preservation cylinder 1, be provided with outer crucible 2, be provided with interior crucible 3 in outer crucible 2, crystal raw material 5(is placed at the bottom of the crucible) be contained in the crucible interior surface with seed crystal 6() be positioned at crucible 3.Wherein, interior outer crucible has the crucible lid to seal separately, and perhaps outer crucible also can not add crucible lid (shown in Figure 1), so that crucible in taking out.
Embodiment 1:
Use the grow single-crystal silicon carbide of 6 inch diameters of the utility model device and induction heating physical vapor transport.Use the coaxial high purity graphite crucible (being called for short " two crucible ") of inside and outside two covers, 200 millimeters of outer crucible internal diameters, 250 millimeters of external diameters, the outside is high 300 millimeters, inner chamber is high 250 millimeters; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and 160 millimeters of internal diameters, 180 millimeters of external diameters, the outside is high 160 millimeters, inner chamber is high 120 millimeters.Interior crucible is placed on the outer crucible bottom coaxially, and interior crucible has the sealing of crucible lid, and outer crucible does not add the crucible lid, so that crucible in taking out.After growth finishes, from outer crucible, take out interior crucible, cut the silicon carbide crystal ingot of interior crucible, taking-up 6 inch diameters; And outer crucible is motionless, can recycle.
Embodiment 2:
Use the grow aluminum-nitride single crystal of 1 inch diameter of the utility model device and induction heating physical vapor transport.Use the coaxial tantalum crucible (being called for short " two crucible ") of inside and outside two covers, 41 millimeters of outer crucible internal diameters, 80 millimeters of external diameters, the outside is high 80 millimeters, inner chamber is high 60 millimeters; Interior crucible only is used for splendid attire raw material (being placed at the bottom of the crucible) and seed crystal (being contained in the crucible interior surface), and internal diameter is 30 millimeters, 40 millimeters of external diameters, the outside is high 50 millimeters, inner chamber is high 40 millimeters.Interior crucible is placed on the outer crucible bottom coaxially, and interior outer crucible has the sealing of crucible lid.Grow after the end, open the outer crucible lid, from outer crucible, take out interior crucible, cut the aluminum-nitride single crystal ingot of interior crucible, taking-up 1 inch diameter; And outer crucible is motionless, can recycle.
It should be noted that at last: the above only is preferred embodiment of the present utility model, be not limited to the utility model, although with reference to previous embodiment the utility model is had been described in detail, for a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (3)
1. the device of two crucible induction heating physical vapor transport growing single-crystals, comprise heat-preservation cylinder, it is characterized in that: in described heat-preservation cylinder, be provided with outer crucible, in described outer crucible, be provided with interior crucible, interior outer crucible is coaxial, and crystal raw material and seed crystal are positioned at crucible.
2. the device of according to claim 1 pair of crucible induction heating physical vapor transport growing single-crystal is characterized in that: described interior crucible is provided with for the crucible lid of placing seed crystal.
3. the device of according to claim 1 and 2 pair of crucible induction heating physical vapor transport growing single-crystal, it is characterized in that: the device of described pair of crucible induction heating physical vapor transport growing single-crystal is applicable to silicon carbide or aluminium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220134774 CN202643904U (en) | 2012-04-01 | 2012-04-01 | Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220134774 CN202643904U (en) | 2012-04-01 | 2012-04-01 | Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202643904U true CN202643904U (en) | 2013-01-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220134774 Expired - Lifetime CN202643904U (en) | 2012-04-01 | 2012-04-01 | Double-crucible induction heating physical vapor phase transmission device for monocrystalline growth |
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| CN (1) | CN202643904U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586858A (en) * | 2012-04-01 | 2012-07-18 | 北京华进创威电子有限公司 | Double-crucible device for growing single crystals through induction heating physical vapor phase transfer |
| CN103194790A (en) * | 2013-04-03 | 2013-07-10 | 中山大学 | Growth device and method for phosphorus-germanium-zinc single crystal |
| WO2017113368A1 (en) * | 2015-12-29 | 2017-07-06 | 中国科学院上海硅酸盐研究所 | Crucible for growth of silicon carbide crystal |
| CN112281214A (en) * | 2020-10-29 | 2021-01-29 | 山东大学 | Method and device for growing rare earth sesquioxide crystal based on double-crucible method |
-
2012
- 2012-04-01 CN CN 201220134774 patent/CN202643904U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586858A (en) * | 2012-04-01 | 2012-07-18 | 北京华进创威电子有限公司 | Double-crucible device for growing single crystals through induction heating physical vapor phase transfer |
| CN103194790A (en) * | 2013-04-03 | 2013-07-10 | 中山大学 | Growth device and method for phosphorus-germanium-zinc single crystal |
| CN103194790B (en) * | 2013-04-03 | 2016-08-03 | 中山大学 | The grower of a kind of phosphorus germanium zinc monocrystal and method |
| WO2017113368A1 (en) * | 2015-12-29 | 2017-07-06 | 中国科学院上海硅酸盐研究所 | Crucible for growth of silicon carbide crystal |
| CN112281214A (en) * | 2020-10-29 | 2021-01-29 | 山东大学 | Method and device for growing rare earth sesquioxide crystal based on double-crucible method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Double-crucible device for growing single crystals through induction heating physical vapor phase transfer Effective date of registration: 20151117 Granted publication date: 20130102 Pledgee: Medium range Leasing Co. Ltd. Pledgor: Beijing Huajin Chuangwei Electronics Co., Ltd. Registration number: 2015990001011 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20161201 Granted publication date: 20130102 Pledgee: Medium range Leasing Co. Ltd. Pledgor: Beijing Huajin Chuangwei Electronics Co., Ltd. Registration number: 2015990001011 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170106 Address after: Tonghui trunk road 100176 Beijing city Daxing District economic and Technological Development Zone No. 17 hospital Patentee after: CENTURY GOLDRAY SEMICONDUCTOR CO., LTD. Address before: 100176 Beijing economic and Technological Development Zone, Beijing, sea road, No. 17, No. three, No. Patentee before: Beijing Huajin Chuangwei Electronics Co., Ltd. |
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| PP01 | Preservation of patent right |
Effective date of registration: 20180814 Granted publication date: 20130102 |
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| PP01 | Preservation of patent right | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20200810 Granted publication date: 20130102 |
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| PD01 | Discharge of preservation of patent | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130102 |
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| CX01 | Expiry of patent term |