CN109576792A - Silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment - Google Patents
Silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment Download PDFInfo
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- CN109576792A CN109576792A CN201910108176.1A CN201910108176A CN109576792A CN 109576792 A CN109576792 A CN 109576792A CN 201910108176 A CN201910108176 A CN 201910108176A CN 109576792 A CN109576792 A CN 109576792A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipments, belong to field of crystal growth.The silicon carbide monocrystal growth device includes crucible, and crucible includes the crucible body being mainly made of bottom wall and lower wall and upper side wall and crucible cover；Upper side wall is mounted in the lower wall, and crucible cover is closed for covering in the upper side wall；Crucible body, upper side wall and crucible cover form the confined space for growing single-crystal silicon carbide；Alternatively, crucible includes the lower crucible body being mainly made of bottom wall and lower wall, and the upper crucible body mainly formed by upper side wall and crucible cover；The upper side wall installation lid of upper crucible body closes in the lower wall of the lower crucible body, so that upper crucible body and lower crucible body form the confined space for growing single-crystal silicon carbide.Above-mentioned silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment can integrally damage during preparing single-crystal silicon carbide to avoid crucible, and reduce the probability of injury to personnel.
Description
Technical field
The present invention relates to field of crystal growth, more particularly, to a kind of silicon carbide monocrystal growth device, and including the carbon
The single-crystal silicon carbide Preparation equipment of SiClx single-crystal growing apparatus.
Background technique
Single-crystal silicon carbide is generally obtained by way of physical vapour deposition (PVD) in the prior art.It prepares and is carbonized according to this method
The equipment of silicon single crystal includes crucible, and the material of crucible is generally graphite comprising crucible body and crucible cover, crucible cover can cover conjunction
On crucible body, to form closed growing space in crucible.The bottom of crucible is for placing sic powder, and top is then
It is provided with growth pedestal；For fixing silicon carbide seed, and the aufwuchsplate with single-crystal silicon carbide on growth pedestal.Specific preparation
The substantially process of single-crystal silicon carbide are as follows: make graphite crucible generate heat in a manner of induction heating first, and make graphite crucible vertical
Formation temperature gradient on direction, and the temperature of bottom is high, and the temperature at top is low；Temperature in graphite crucible bottom reaches certain
When temperature (such as 2100 DEG C) (and meeting other corresponding conditions, such as low pressure), sic powder can distil to form silicon carbide list
Brilliant growth atmosphere, gaseous component includes gaseous Si, Si2C、SiC2Deng the gaseous component can rise；When rising to crucible
When top, since the temperature at top is lower, it will crystallize to form single-crystal silicon carbide at silicon carbide seed.
But with it is above-mentioned prepare single-crystal silicon carbide during, can have the following problems:
In the growth course of above-mentioned single-crystal silicon carbide, gaseous component is not limited to the life in silicon carbide monocrystal growth pedestal
It crystallizes to form single-crystal silicon carbide at long face, can also deposit and crystallize in its neighboring area, form carbonization policrystalline silicon, and these are carbonized
Crucible cover and crucible body are often bonded together by policrystalline silicon, thus when taking out single-crystal silicon carbide, it has to use instrument
Cutting separates crucible cover and crucible body.It will increase the risk of crystal cleavage and injury to personnel during this cutting, and
And the crucible after cutting will appear breakage, and have to scrap.
Summary of the invention
It include the silicon carbide monocrystal growth the purpose of the present invention is to provide a kind of silicon carbide monocrystal growth device and one kind
The single-crystal silicon carbide Preparation equipment of device, to improve or alleviate the above-mentioned technical problems in the prior art.
Silicon carbide monocrystal growth device provided by the invention comprising crucible, the crucible include mainly by bottom wall under
The crucible body and upper side wall and crucible cover of side wall composition；The upper side wall is mounted in the lower wall, and the crucible cover is used
It is closed on the upper side wall in lid；The crucible body, upper side wall and crucible cover form the confined air for growing single-crystal silicon carbide
Between；Or
The crucible includes the lower crucible body being mainly made of bottom wall and lower wall, and mainly by upper side wall and crucible cover
The upper crucible body formed；The upper side wall installation lid of the upper crucible body closes in the lower wall of the lower crucible body, so that described
Upper crucible body and lower crucible body form the confined space for growing single-crystal silicon carbide.
Wherein, the upper side wall and the abutted surface of lower wall are inclined-plane, and are tilted down from crucible to outside direction.
Wherein, the ratio range of the height of the height and lower wall of the upper side wall is in 1:2.5-1:5.
Further, the ratio of the height of the height and lower wall of the upper side wall is 1:3.
Wherein, the silicon carbide monocrystal growth device further includes growth pedestal and buffer gear；The crucible bottom setting
There is accommodating space, is used to place sic powder in the accommodating space；The top of the crucible is arranged in the growth pedestal,
For growing single-crystal silicon carbide on the growth pedestal；The buffer gear is arranged in the crucible, is located at the accommodating
At position between space and growth pedestal；And there is gas passage on the buffer gear, so that growth atmosphere can be through described
Gas passage reaches at the growth pedestal of the crucible top.
Wherein, the upper end of the lower end and lower wall of the buffer gear and the upper side wall connects, by the upside
Wall and the seam crossing of lower wall block.
Wherein, the silicon carbide monocrystal growth device further includes deflector, and the deflector is arranged in the crucible
It is interior, and between the buffer gear and the growth pedestal, the gas for generating sic powder distillation guide to
To the growth pedestal direction.
Wherein, the upper end of the lower end and lower wall of the deflector and the upper side wall connects, by the upside
Wall and the seam crossing of lower wall block.
Single-crystal silicon carbide Preparation equipment provided by the invention comprising above-mentioned silicon carbide monocrystal growth device.
The invention has the following advantages:
Silicon carbide monocrystal growth device provided by the invention, the side wall of crucible are divided into upper side wall and lower wall, and upside
It is separated between wall and lower wall.Knot after the process for preparing single-crystal silicon carbide terminates, between upper side wall and lower wall
The two is separated at conjunction, to open in crucible for growing the confined space of single-crystal silicon carbide.Due to upper side wall and lower wall
Joint and crucible cover have a certain distance, the crystal for crystallizing formation herein is less, or not will receive gaseous component
It corrodes, be not in crystallization, so as to easily separate upper side wall and lower wall, avoid the mode cut using instrument,
So as to reduce the impaired probability of crucible, and also reduce the generation for the personal damage being easy to cause by instrument cutting
Rate.Moreover, the preparation process of single-crystal silicon carbide next time can be also used for for the lower part of the crucible after separation, thus
Equipment cost can be reduced.
Single-crystal silicon carbide Preparation equipment provided by the invention comprising above-mentioned silicon carbide monocrystal growth device, it is therefore, same
Sample has each beneficial effect possessed by above-mentioned silicon carbide monocrystal growth device.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is that silicon carbide monocrystal growth device provided by the invention is vertical in the first embodiment of its first embodiment
Body schematic cross-sectional view；
Fig. 2 is that silicon carbide monocrystal growth device provided by the invention is vertical in the second embodiment of its first embodiment
Body schematic cross-sectional view；
Fig. 3 is that silicon carbide monocrystal growth device provided by the invention is vertical in the 3rd embodiment of its first embodiment
Body schematic cross-sectional view；
Fig. 4 is one kind of 3rd embodiment of the silicon carbide monocrystal growth device provided by the invention in its first embodiment
The perspective cross-sectional schematic diagram of advantageous variant；
Fig. 5 is that silicon carbide monocrystal growth device provided by the invention is vertical in the fourth embodiment of its first embodiment
Body schematic cross-sectional view；
Fig. 6 is one kind of fourth embodiment of the silicon carbide monocrystal growth device provided by the invention in its first embodiment
The perspective cross-sectional schematic diagram of advantageous variant；
Fig. 7 is perspective cross-sectional signal of the silicon carbide monocrystal growth device provided by the invention in its second embodiment
Figure.
Icon: 10: crucible；11: accommodating space；12: bossy body；13: crucible body；14: upper side wall；15: crucible cover；16:
Lower crucible body；17: upper crucible body；20: growth pedestal；30: buffer gear；31: gas passage；40: deflector；41: water conservancy diversion
Hole；
130: bottom wall；131: lower wall；
160: bottom wall；161: lower wall；170: upper side wall；171: crucible cover.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The present invention provides a kind of silicon carbide monocrystal growth device, and multiple implementations of silicon carbide monocrystal growth device are given below
Mode, so that those skilled in the art can be realized the silicon carbide monocrystal growth device.
(1) first embodiment of silicon carbide monocrystal growth device
In the first embodiment of silicon carbide monocrystal growth device, as shown in Figure 1, silicon carbide monocrystal growth device includes
Crucible 10；Crucible 10 includes the crucible body 13 being mainly made of bottom wall 130 and lower wall 131 and upper side wall 14 and crucible cover
15.Upper side wall 14 is mounted in lower wall 131, and crucible cover 15 is closed for covering in upper side wall 14.Crucible body 13,14 and of upper side wall
Crucible cover 15 forms the confined space for growing single-crystal silicon carbide.
Fig. 1 show the first embodiment of present embodiment, as shown in Figure 1,10 bottom of crucible is provided with bossy body 12, it should
It is formed with accommodating space 11 between bossy body 12 and the side wall of crucible 10, is used to place carborundum powder in the accommodating space 11
Material.
As described in the background section, during preparing single-crystal silicon carbide, the gas of sic powder distillation generation
Not only single-crystal silicon carbide can be grown on the aufwuchsplate of growth pedestal 20, it can also be that is, closed in crucible 10 in its neighboring area
The roof in space and its with side wall joint deposit and crystallize.In the prior art, the crystal that these regions are formed is in silicon carbide
After the completion of single crystal preparation, the process for opening crucible cover, taking-up single-crystal silicon carbide can be formed and be hindered, and have to cut using instrument
Unlatching, the separation for cutting to realize crucible cover.
After the process for preparing single-crystal silicon carbide terminates, junction between upper side wall 14 and lower wall 131 is by two
Person's separation, to open the confined space that crucible body 13, upper side wall 14 and crucible cover 15 are formed.Due to upper side wall 14 and lower wall
131 joint and crucible cover 15 have a certain distance, and the crystal for crystallizing formation herein is less, or not will receive gas phase group
Point erosion, be not in crystallization, so as to easily separate upper side wall 14 and lower wall 131, avoid cutting using instrument
The mode cut so as to reduce the impaired probability of crucible 10, and also reduces the people being easy to cause by instrument cutting
The incidence of member's damage.
Moreover, can be also used for the preparation process of single-crystal silicon carbide next time, under for the crucible body 13 after separation
When once preparing single-crystal silicon carbide, it is only necessary to new upper side wall 14 and crucible cover 15 are installed on crucible body 13, it can be in crucible
New confined space is formed on the basis of body 13, for preparing the process of single-crystal silicon carbide next time.
Since gaseous component generally only corrodes the top of crucible 10, for the lower crucible body 13 positioned at lower part, by
Erosion it is smaller, or do not suffer erosion.Therefore, it for the crucible body 13 after separation, will be carbonized in accommodating space 11
The residue of silicon powder material removes, and after cleaning up, can be also used for the preparation process of next single-crystal silicon carbide, thus may be used
Equipment cost needed for producing multiple single-crystal silicon carbide with reduction.Specifically, in the present embodiment, the height of upper side wall 14 is under
The ratio range of the height of side wall 131 is in 1:2.5-1:5, preferably 1:3.
In the second embodiment of present embodiment, on the basis of first embodiment, upper side wall connects with lower wall
Face is inclined-plane, and is tilted down from crucible 10 to outside direction, as shown in Figure 2.Obviously, the inclined direction and earthenware of the joint
The circulating direction of gas is on the contrary, the gas that sic powder distillation generates in this way in crucible 10 flows from bottom to top in crucible 10
When, it is possible to reduce or the generation for avoiding gas from leaking out by the joint of upper side wall and lower wall.
In the 3rd embodiment of present embodiment, silicon carbide monocrystal growth device further includes growth pedestal 20 and buffer
Structure 30.The top of crucible 10 is arranged in growth pedestal 20, for growing single-crystal silicon carbide on growth pedestal 20.Buffer gear 30
It is arranged in crucible 10, at the position between accommodating space 11 and growth pedestal 20.It is logical with gas on buffer gear 30
Road 31, so that growth atmosphere can reach at the growth pedestal 20 at 10 top of crucible through gas passage 31.
Specifically, as shown in figure 3, buffer gear 30 is annular workpieces, outer peripheral edge connects with the inner wall of crucible 10, and
It is fixed in crucible 10 with the joint of crucible 10.The outer peripheral edge of buffer gear 30 connects with the inner wall of crucible 10 and refers to
Buffer gear 30 is in structures such as the complete gaps for being circumferentially above not present between 10 inner wall of crucible and obviously allowing gas to enough pass through；
Certainly, except the slight gap being likely to occur due to factors such as sealing technology levels.And between buffer gear 30 and crucible 10
Fixation concrete mode are as follows: there is a peripheral flange, as shown in Fig. 2, buffer gear 30 is placed in the peripheral flange in crucible 10
On, so that the peripheral flange supports buffer gear 30, it is fixed in buffer gear 30 in crucible 10.
In the present embodiment, as shown in figure 3, the upper end of the lower end and lower wall of buffer gear 30 and upper side wall connects,
The seam crossing of upper side wall and lower wall to be blocked.Setting can reduce or avoid gas to pass through upper side wall and lower wall in this way
The generation that leaks out of joint.
Preferably, the present embodiment can be further in conjunction with above-mentioned second embodiment, as shown in figure 4, can further subtract
Less or the generation that avoids gas from leaking out by the joint of upper side wall and lower wall.
In the fourth embodiment of present embodiment, silicon carbide monocrystal growth device further includes buffer gear 30 and flow guiding machine
Structure 40, as shown in Figure 5；Wherein, buffer gear 30 is identical with above-mentioned 3rd embodiment；The setting of 40 deflector 40 of deflector
In crucible 10, and it is located between buffer gear 30 and growth pedestal 20, the gas for generating sic powder distillation draws
It is directed to 20 direction of growth pedestal.Specifically, when the gas that sic powder distillation generates flows up through buffer gear 30
Afterwards, deflector 40 draws the portion gas at guiding growth pedestal 20, assembles the portion gas at growth pedestal 20, this
Sample can reduce the diffusion of the portion gas, increase the gas density at growth pedestal 20, to be conducive to improve growth pedestal
The speed of growth of single-crystal silicon carbide on 20 aufwuchsplate.
In the present embodiment, as shown in figure 5, the upper end of the lower end and lower wall of deflector 40 and upper side wall connects,
The seam crossing of upper side wall and lower wall to be blocked.Setting can reduce or avoid gas to pass through upper side wall and lower wall in this way
The generation that leaks out of joint.
Preferably, the present embodiment can be further in conjunction with above-mentioned second embodiment, as shown in fig. 6, can further subtract
Less or the generation that avoids gas from leaking out by the joint of upper side wall and lower wall.
(2) second embodiment of silicon carbide monocrystal growth device
In the second embodiment of silicon carbide monocrystal growth device, silicon carbide monocrystal growth device equally includes crucible
10, structure and function is roughly the same with above-mentioned first embodiment.For present embodiment and above-mentioned first embodiment
Something in common, due to having had a detailed description in the above-described first embodiment, details are not described herein again.Below with regard to this embodiment party
Expansion describes in place of the difference of formula and above-mentioned first embodiment.
As shown in fig. 7, in the present embodiment, crucible 10 includes the lower earthenware being mainly made of bottom wall 160 and lower wall 161
Crucible body 16, and the upper crucible body 17 mainly formed by upper side wall 170 and crucible cover 171.Specifically, lower crucible body 16 includes
Bottom wall 160 and lower wall 161, and the main body of bottom wall 160 and lower wall 161 as lower crucible body 16, bottom wall 160 and lower wall
161 can be structure as a whole, or to be fixed on separate structure together.Upper crucible body 17 includes upper side wall 170 and earthenware
Crucible lid 171, and the main body of upper side wall 170 and crucible cover 171 as upper crucible cover, upper side wall 170 and crucible cover 171 are integrated knot
Structure.
The installation lid of upper side wall 170 of upper crucible body 17 closes in the lower wall 161 of lower crucible body 16, so that upper crucible body 17
The confined space for growing single-crystal silicon carbide is formed with lower crucible body 16.
In the present embodiment, similar with above-mentioned first embodiment, after the process for preparing single-crystal silicon carbide terminates,
The two is separated with the joint of lower wall 161 in upper side wall 160, that is to say separates crucible body 17 and lower crucible body 16,
The technical effect being the same as the above first embodiment may be implemented, details are not described herein again.
The present invention also provides a kind of single-crystal silicon carbide Preparation equipments, in embodiments thereof, single-crystal silicon carbide Preparation equipment
Silicon carbide monocrystal growth device in above embodiment, and, it further include for the heating device of heating crucible, for making earthenware
Crucible is in equipment such as the insulation constructions of vertical direction formation temperature gradient.
Single-crystal silicon carbide Preparation equipment provided by the invention comprising the silicon carbide monocrystal growth dress in above embodiment
It sets, therefore, equally there is each beneficial effect possessed by the silicon carbide monocrystal growth device in above-mentioned multiple embodiments.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (9)
1. one kind is used for silicon carbide monocrystal growth device, which is characterized in that including crucible, the crucible include mainly by bottom wall and
The crucible body and upper side wall and crucible cover of lower wall composition；The upper side wall is mounted in the lower wall, the crucible cover
It closes for covering in the upper side wall；The crucible body, upper side wall and crucible cover are formed for growing the closed of single-crystal silicon carbide
Space；Or
The crucible includes the lower crucible body being mainly made of bottom wall and lower wall, and is mainly formed by upper side wall and crucible cover
Upper crucible body；The upper side wall installation lid of the upper crucible body closes in the lower wall of the lower crucible body, so that the upper earthenware
Crucible body and lower crucible body form the confined space for growing single-crystal silicon carbide.
2. silicon carbide monocrystal growth device according to claim 1, which is characterized in that the phase of the upper side wall and lower wall
Junction is inclined-plane, and tilts down from crucible to outside direction.
3. silicon carbide monocrystal growth device according to claim 1 or 2, which is characterized in that the height of the upper side wall with
The ratio range of the height of lower wall is in 1:2.5-1:5.
4. silicon carbide monocrystal growth device according to claim 3, which is characterized in that the height of the upper side wall and downside
The ratio of the height of wall is 1:3.
5. silicon carbide monocrystal growth device according to claim 1 or 2, which is characterized in that the silicon carbide monocrystal growth
Device further includes growth pedestal and buffer gear；
The crucible bottom is provided with accommodating space, is used to place sic powder in the accommodating space；
The top of the crucible is arranged in the growth pedestal, for growing single-crystal silicon carbide on the growth pedestal；
The buffer gear is arranged in the crucible, at the position between the accommodating space and growth pedestal；And institute
Stating has gas passage on buffer gear, so that growth atmosphere can reach the growth base of the crucible top through the gas passage
At seat.
6. silicon carbide monocrystal growth device according to claim 5, which is characterized in that the buffer gear and the upside
The lower end of wall and the upper end of lower wall connect, and the seam crossing of the upper side wall and lower wall is blocked.
7. silicon carbide monocrystal growth device according to claim 5, which is characterized in that the silicon carbide monocrystal growth device
It further include deflector, the deflector is arranged in the crucible, and is located at the buffer gear and the growth pedestal
Between, the gas for generating sic powder distillation, which draws, is directed to the growth pedestal direction.
8. silicon carbide monocrystal growth device according to claim 7, which is characterized in that the deflector and the upside
The lower end of wall and the upper end of lower wall connect, and the seam crossing of the upper side wall and lower wall is blocked.
9. a kind of single-crystal silicon carbide Preparation equipment, which is characterized in that including silicon carbide list described in claim 1-8 any one
Crystals growth device.
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Cited By (4)
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| CN109913951A (en) * | 2019-04-23 | 2019-06-21 | 江苏星特亮科技有限公司 | Silicon carbide single crystal growth device |
| CN110284188A (en) * | 2019-07-30 | 2019-09-27 | 河北普兴电子科技股份有限公司 | The method that PVT method prepares silicon carbide crucible and adjusts crucible temperature field |
| CN113046826A (en) * | 2021-03-15 | 2021-06-29 | 哈尔滨化兴软控科技有限公司 | Device and method capable of improving utilization rate of raw materials |
| CN113136622A (en) * | 2021-04-22 | 2021-07-20 | 中国电子科技集团公司第四十六研究所 | PVT method airflow-oriented silicon carbide single crystal growth device and using method |
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