CN203065640U

CN203065640U - Graphite seed crystal crucible cover for silicon carbide crystal growth

Info

Publication number: CN203065640U
Application number: CN 201320005771
Authority: CN
Inventors: 高宇; 陶莹; 邓树军; 段聪; 赵梅玉
Original assignee: HEBEI TONGGUANG CRYSTAL CO Ltd
Current assignee: HEBEI TONGGUANG CRYSTAL CO Ltd
Priority date: 2013-01-06
Filing date: 2013-01-06
Publication date: 2013-07-17
Anticipated expiration: 2023-01-06

Abstract

The utility model relates to the field of silicon carbide crystals and in particular relates to a graphite seed crystal crucible cover for silicon carbide crystal growth. The graphite seed crystal crucible cover for silicon carbide crystal growth comprises a seed crystal arranged in the graphite seed crystal crucible cover and positioned on top of the graphite seed crystal crucible cover, and a piece of graphite paper, wherein the graphite paper is adhered on the inner walls of the two sides of the graphite seed crystal crucible cover. The graphite seed crystal crucible cover can buffer the extrusion of graphite to the crystal during cooling, the stress in the crystal can be greatly reduced, the temperature reduction speed can be accelerated, the temperature reduction time is shortened, the growth period is shortened and the energy consumption is reduced in the in-situ annealing process; and the annealing time after crystal growth can be shortened, the annealing process is simplified, and breaking in the processes of grinding and slicing and the like is reduced.

Description

The graphite seed crucible cover that a kind of growing silicon carbice crystals is used

Technical field

The utility model relates to the carborundum crystals field, particularly the graphite seed crucible cover used of a kind of growing silicon carbice crystals.

Background technology

In the physical vaporous deposition growth SiC crystal process, crystal is directly in plumbago crucible lid growth inside, crystal directly contacts with graphite, after crystal growth finishes, crystal and plumbago crucible cool off simultaneously, but because the coefficient of thermal expansion difference, crystal is subjected to the graphite extruding and produces big internal stress, can take place broken in following process.

For addressing the above problem, in the prior art, the in-situ annealing technology after finishing by crystal growth is removed thermal stresses in the crystal, namely after crystal growth finishes, slowly reduces Heating temperature, thermal stresses is reduced gradually with temperature and obtains discharging.

But, adopt the method for in-situ annealing to remove thermal stresses, after finishing, crystal growth slowly reduces temperature under the situation of furnace high-temperature, crystal growth temperature is more than 2000 ℃, be reduced to room temperature or 200 ℃ of times that need 10-40 hour, and need to continue consumed power, annealing time is longer.

The utility model content

Technical problem to be solved in the utility model provides the graphite seed crucible cover that a kind of growing silicon carbice crystals that pastes graphite paper in seed crystal crucible cover inside is used.The graphite papery is soft, and the process of being squeezed can produce an amount of compressive set, thereby overcomes the deficiencies in the prior art, shortens the production cycle, reduces energy consumption.

The technical scheme that the utility model solves the problems of the technologies described above is as follows: the graphite seed crucible cover that a kind of growing silicon carbice crystals is used, comprise the seed crystal that is arranged in the described graphite seed crucible cover, is positioned at graphite seed crucible cover top, also comprise graphite paper, described graphite paper is covered on the both sides inwall of described graphite seed crucible cover.

The beneficial effects of the utility model are:

1. cushion graphite to the extruding of crystal in process of cooling, thereby reduce intracrystalline stress significantly, in the annealing process, can accelerate cooling rate in position, shorten temperature fall time, not only shorten growth cycle but also reduced energy consumption;

2. shorten the annealing time after crystal growth finishes, simplify annealing process;

3. reduce the cracked of technologies such as crystal grinding, section.

On the basis of technique scheme, the utility model can also be done following improvement.

Further, described graphite paper thickness is 0.2～1mm.

Description of drawings

Fig. 1 is the utility model synoptic diagram.

In the accompanying drawing, the list of parts of each label representative is as follows:

1, graphite seed crucible cover, 2, seed crystal, 3, carborundum crystals, 4, graphite paper, 5, crucible, 6, sic raw material.

Embodiment

Below in conjunction with accompanying drawing principle of the present utility model and feature are described, institute gives an actual example and only is used for explaining the utility model, is not for limiting scope of the present utility model.

As shown in Figure 1, seed crystal 2 is arranged in the graphite seed crucible cover 1, be positioned at its top, and the inwall in the both sides of graphite seed crucible cover 1 inside is covered with graphite paper 4.

During work, graphite seed crucible cover 1 is placed on the bottom and places on the crucible 5 of sic raw material 6, and along with the rising of temperature, sic raw material 6 distils gradually, grows into carborundum crystals 3 at seed crystal 2.Because graphite paper 4 matter are soft, the process of being squeezed can produce an amount of compressive set, avoid carborundum crystals 3 to be subjected to the extruding of graphite seed crucible cover 1 and produce big internal stress, and in position in the annealing process, can accelerate cooling rate, shorten temperature fall time, not only shorten growth cycle but also reduced energy consumption.

The above only is preferred embodiment of the present utility model, and is in order to limit the utility model, not all within spirit of the present utility model and principle, any modification of doing, is equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.

Claims

1. graphite seed crucible cover that growing silicon carbice crystals is used, comprise the seed crystal that is arranged in the described graphite seed crucible cover, is positioned at graphite seed crucible cover top, it is characterized in that, also comprise graphite paper, described graphite paper is covered on the both sides inwall of described graphite seed crucible cover.

2. the graphite seed crucible cover used of growing silicon carbice crystals according to claim 1 is characterized in that described graphite paper thickness is 0.2～1mm.