CN102776557A - Method for casting polycrystalline silicon ingot by using broken silicon wafers as seed crystals - Google Patents
Method for casting polycrystalline silicon ingot by using broken silicon wafers as seed crystals Download PDFInfo
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- CN102776557A CN102776557A CN2012102912563A CN201210291256A CN102776557A CN 102776557 A CN102776557 A CN 102776557A CN 2012102912563 A CN2012102912563 A CN 2012102912563A CN 201210291256 A CN201210291256 A CN 201210291256A CN 102776557 A CN102776557 A CN 102776557A
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Abstract
The invention relates to a method for casting a polycrystalline silicon ingot by using broken silicon wafers as seed crystals. The method comprises the following steps of: during loading in a crucible, firstly laying broken silicon wafers with certain thickness on the bottom of the ceramic crucible coated with a coating, and keeping that the broken silicon wafers with certain thickness are prevented from being molten in a melting stage; and then transferring into a crystal growing stage for carrying out polycrystalline ingot casting, wherein the thickness of the laid broken silicon wafers is above 3mm, and the thickness of the broken silicon wafers which are not molten at the bottom of the crucible in the melting stage is above 3mm. The invention aims at providing a method for casting the polycrystalline silicon ingot with high quality. The dislocation caused in a crystal growing process is reduced, and the dispersion of impurities at the bottom of the crucible is reduced, therefore, the quality of corresponding silicon wafers is improved.
Description
Technical field
The present invention relates to a kind of method of coming the casting polycrystalline silicon ingot as seed crystal, specifically be applied in the polycrystalline ingot furnace production of photovoltaic industry with broken silicon wafers.
Background technology
Accurate single crystal technology can obviously promote the quality that the polycrystalline ingot furnace is cast accurate single crystal rod.According to open source information, accurate monocrystalline was succeeded in developing by BPSolar as far back as 2006, domestic subsequently brilliant Australia, phoenix photovoltaic, LDK, Shang De, day close, sunlight brightness, brilliant section etc. issue its accurate monocrystalline progress successively.But there are a lot of bottlenecks in accurate single crystal technology, and most enterprise production costs are high, can't realize suitability for industrialized production.
Summary of the invention
Its purpose of the present invention just is to provide a kind of method of coming the casting polycrystalline silicon ingot with broken silicon wafers as seed crystal; Overcome in the efficient polycrystalline technology of tradition; The seed crystal cost is high, and the problem that the bottom minority carrier life time is low reduces the dislocation that produces in the long brilliant process; Reduce the crucible bottom diffusion of contaminants simultaneously, thereby improve the quality of corresponding silicon chip.
The technical scheme that realizes above-mentioned purpose and take may further comprise the steps:
A, broken silicon wafers is laid on crucible bottom, its complementary space of crucible can be adorned primary polysilicon or list, polycrystalline cycle stock batching, after the body of heater of the polycrystalline ingot furnace of packing into and the sealing, begins to bleed, heat;
B, change the material stage, keeping the base section broken silicon wafers not to be melted, changing the long brilliant stage then over to;
C, long crystalline substance of initial stage, individual hour of first three of long brilliant stage, speed is 0.1-1.5 centimetre/hour;
D, the brilliant speed of length in mid-term are 1-1.8 centimetre/hour, and the later stage, long brilliant speed was 0.4-1 centimetre/hour;
After e, long brilliant process are accomplished, get into annealing, cooling step, take out polycrystal silicon ingot after cooling is accomplished.
Compared with prior art the present invention has the following advantages.
Owing to adopted the method for coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, can under the cost of common ingot casting, improve ingot quality, promote corresponding silicon chip efficiency of conversion.Compare with accurate single crystal technology as the seed crystal technology with broken silicon wafers, can get rid of special single crystal seed and seed crystal cutting cost, can promote the available section ratio of ingot, and efficiency of conversion can reach the level that is close with seed crystal.Overcome in the efficient polycrystalline technology of tradition, the seed crystal cost is high, and the problem that the bottom minority carrier life time is low reduces the dislocation that produces in the long brilliant process, reduces the crucible bottom diffusion of contaminants simultaneously, thereby improves the quality of corresponding silicon chip.
Embodiment
Present method may further comprise the steps:
A, broken silicon wafers is laid on crucible bottom, its complementary space of crucible can be adorned primary polysilicon or list, polycrystalline cycle stock batching, after the body of heater of the polycrystalline ingot furnace of packing into and the sealing, begins to bleed, heat;
B, change the material stage, keeping the base section broken silicon wafers not to be melted, changing the long brilliant stage then over to;
C, long crystalline substance of initial stage, individual hour of first three of long brilliant stage, speed is 0.1-1.5 centimetre/hour;
D, the brilliant speed of length in mid-term are 1-1.8 centimetre/hour, and the later stage, long brilliant speed was 0.4-1 centimetre/hour;
After e, long brilliant process are accomplished, get into annealing, cooling step, take out polycrystal silicon ingot after cooling is accomplished.
Described broken silicon wafers comprises the IC silicon chip, sun power list, polycrystalline cutting fragmentation, and said broken silicon wafers is the lenticular structure.
Said broken silicon wafers is laid on crucible bottom and its thickness of broken silicon wafers that keeps the base section broken silicon wafers not to be melted more than 3 millimeters, and the broken silicon wafers number of plies is more than two-layer.
The length direction yardstick of said broken silicon wafers greater than the total mass of 10 millimeters material account for the crucible bottom shop total broken silicon wafers quality and more than 30%.
The length direction size of crystal grain in the said broken silicon wafers accounts for more than 30% of the broken silicon wafers total area greater than 10 millimeters chip area.
Present method is come the ingot furnace of growing polycrystalline silicon ingot through directional freeze; The power of directional freeze comes from passive cooling, through changing near the thermal radiation oriented solidified blocks (helping grumeleuse), hot-fluid, and comes directed change temperature field through water-cooled, gas cooling mode; Realize directed fusing, directional freeze.
Changing the speed and the remaining height of the material fusing of material stage, and the speed of long brilliant stage crystal growth and the height of crystal growth, can detect through inserting quartz pushrod.
Change the speed and the remaining height of the material fusing of material stage, and the speed of long brilliant stage crystal growth and the height of crystal growth, can control fusing and long brilliant speed through the interface test set, fusing and long brilliant height.
Principle of work of the present invention: with broken silicon wafers as seed crystal; Make long brilliant initial stage homogeneity forming core; Compare (heterogeneous forming core on silicon nitride coating) forming core point with no seed crystal method and reduce, reduce long brilliant initial stage intercrystalline competing phase on the one hand, can reduce the accumulation of stress and the formation of dislocation less; The fluffy structure of broken silicon wafers can hinder the diffusion to silicon material the inside of crucible bottom impurity on the other hand; The dislocation of part reduces finally to make whole ingot remove end to end, and minority carrier life time improves, and efficiency of conversion also has obvious lifting.
Comprise following step:
Broken silicon wafers evenly is laid on ceramic crucible (staple SiO
2) bottom, thickness is more than 3 millimeters, and other throws furnace charge by normal charging method dress above the broken silicon wafers;
Behind the sealing furnace chamber, open cycle water is evacuated to 10-0.8Pa;
Begin heating, progressively increase power, begin to feed argon gas in the silicon material fusion stage, air pressure remains on 0.4-0.8 normal atmosphere, and keeps a constant air pressure;
Adjustment ingot casting furnace temperature field makes broken silicon wafers position, bottom temperature below fusing point;
The fusing later stage divides the time period measurement to remain not melted silicon material height, and silicon material fusing position will be arrived below the uppermost surface of the broken silicon wafers of spreading the bottom, keeps the above broken silicon wafers of 3 millimeters thickness not to be melted at last;
After below the broken silicon wafers upper surface of solution arrival crucible bottom shop, change the long brilliant stage over to;
After long brilliant the completion, annealed again, polycrystal silicon ingot is taken out in cooling at last.
Embodiment 1, use monocrystalline broken silicon wafers are laid on the ceramic crucible bottom as seed crystal, and all the other use normal batching and normal charging method charging, come the casting polycrystalline silicon ingot.
Embodiment 2, use polycrystalline broken silicon wafers are laid on the ceramic crucible bottom as seed crystal, and all the other use normal batching and normal charging method charging, come the casting polycrystalline silicon ingot.
Embodiment 3, the single polycrystalline mixing broken silicon wafers of use are laid on the ceramic crucible bottom as seed crystal, and all the other use normal batching and normal charging method charging, come the casting polycrystalline silicon ingot.
Embodiment 4, use the IC sheet stock meet the solar photovoltaic silicon material requirements, and with the batch mixing of monocrystalline, polycrystalline broken silicon wafers, be laid on the ceramic crucible bottom as seed crystal, all the other use normal batching and normal charging method charging, come the casting polycrystalline silicon ingot.
Embodiment 5, like embodiment 1-embodiment 4 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the thickness of broken silicon wafers that spread the bottom is 30 millimeters.
Embodiment 6, like embodiment 1-embodiment 4 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the thickness of broken silicon wafers that spread the bottom is 40 millimeters.
Embodiment 7, like embodiment 1-embodiment 4 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the thickness of broken silicon wafers that spread the bottom is 50 millimeters.
Embodiment 8, like embodiment 1-embodiment 4 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the thickness of broken silicon wafers that spread the bottom is 60 millimeters.
Embodiment 9, like embodiment 1-embodiment 4 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the thickness of broken silicon wafers that spread the bottom is 80 millimeters.
Embodiment 10, like embodiment 1-embodiment 9 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the fusing residual altitude be 6 millimeters.
Embodiment 11, like embodiment 1-embodiment 9 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the fusing residual altitude be 8 millimeters.
Embodiment 12, like embodiment 1-embodiment 9 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the fusing residual altitude be 15 millimeters.
Embodiment 13, like embodiment 1-embodiment 9 described methods of coming the casting polycrystalline silicon ingot as seed crystal with broken silicon wafers, the fusing residual altitude be 25 millimeters.
Embodiment 14, like embodiment 1-embodiment 13 described methods of coming the casting polycrystalline silicon ingot as seed crystal, wherein with broken silicon wafers:
(1), broken silicon wafers evenly is laid on the ceramic crucible bottom of having done the overprotection coating, broken silicon wafers evenly is laid on the ceramic crucible bottom, thickness is more than 3 millimeters, and other throws furnace charge by normal charging method dress above the broken silicon wafers;
(2), the sealing furnace chamber after, open cycle water is evacuated to 0.8Pa;
(3), begin the heating, progressively increase power, begin to feed argon gas in the silicon material fusion stage, air pressure remains on 0.6 normal atmosphere, and keeps a constant air pressure;
(4), adjustment ingot casting furnace temperature field, make broken silicon wafers position, bottom temperature below fusing point;
(5), the fusing later stage divides time period measurements to remain not melted silicon material height, silicon material fusing position will be arrived below the uppermost surface of the broken silicon wafers of spreading the bottom, keeps the broken silicon wafers more than 3 millimeters thickness not to be melted at last;
(6), after solution arrives below the broken silicon wafers upper surface of crucible bottom shop, change the long brilliant stage over to;
(7), after long brilliant the completion, annealed again, polycrystal silicon ingot is taken out in cooling at last.
Claims (5)
- One kind with broken silicon wafers as the method that seed crystal comes the casting polycrystalline silicon ingot, it is characterized in that, may further comprise the steps:A, broken silicon wafers is laid on crucible bottom, its complementary space of crucible can be adorned primary polysilicon or list, polycrystalline cycle stock batching, after the body of heater of the polycrystalline ingot furnace of packing into and the sealing, begins to bleed, heat;B, change the material stage, keeping the base section broken silicon wafers not to be melted, changing the long brilliant stage then over to;C, long crystalline substance of initial stage, individual hour of first three of long brilliant stage, speed is 0.1-1.5 centimetre/hour;D, the brilliant speed of length in mid-term are 1-1.8 centimetre/hour, and the later stage, long brilliant speed was 0.4-1 centimetre/hour;After e, long brilliant process are accomplished, get into annealing, cooling step, take out polycrystal silicon ingot after cooling is accomplished.
- 2. according to claim 1 a kind of with broken silicon wafers as the method that seed crystal comes the casting polycrystalline silicon ingot, it is characterized in that described broken silicon wafers comprises the IC silicon chip, sun power list, polycrystalline cutting fragmentation, said broken silicon wafers is the lenticular structure.
- 3. a kind of method of coming the casting polycrystalline silicon ingot with broken silicon wafers as seed crystal according to claim 1; It is characterized in that; Said broken silicon wafers is laid on crucible bottom and its thickness of broken silicon wafers that keeps the base section broken silicon wafers not to be melted more than 3 millimeters, and the broken silicon wafers number of plies is more than two-layer.
- 4. a kind of method of coming the casting polycrystalline silicon ingot with broken silicon wafers as seed crystal according to claim 1 and 2; It is characterized in that, the length direction yardstick of said broken silicon wafers greater than the total mass of 10 millimeters material account for the crucible bottom shop total broken silicon wafers quality and more than 30%.
- 5. according to claim 1 and 2 a kind of with broken silicon wafers as the method that seed crystal comes the casting polycrystalline silicon ingot, it is characterized in that the length direction size of the crystal grain in the said broken silicon wafers accounts for more than 30% of the broken silicon wafers total area greater than 10 millimeters chip area.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215633A (en) * | 2013-04-10 | 2013-07-24 | 衡水英利新能源有限公司 | Method for casting ingots by polycrystalline silicon |
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN104018218A (en) * | 2014-05-23 | 2014-09-03 | 奥特斯维能源（太仓）有限公司 | Ingot casting method for increasing transformation rate of polysilicon cell |
| CN104120491A (en) * | 2014-08-14 | 2014-10-29 | 无锡尚品太阳能电力科技有限公司 | Manufacturing process of polycrystalline silicon cast ingot |
| CN104131339A (en) * | 2014-07-18 | 2014-11-05 | 中国电子科技集团公司第四十八研究所 | Preparation method of polysilicon chip |
| CN104928755A (en) * | 2014-03-19 | 2015-09-23 | 晶科能源有限公司 | Polysilicon ingot casting method |
| CN105369350A (en) * | 2015-11-11 | 2016-03-02 | 晶科能源有限公司 | Polysilicon crystal growth technology |
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| CN103215633A (en) * | 2013-04-10 | 2013-07-24 | 衡水英利新能源有限公司 | Method for casting ingots by polycrystalline silicon |
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| CN104018218A (en) * | 2014-05-23 | 2014-09-03 | 奥特斯维能源（太仓）有限公司 | Ingot casting method for increasing transformation rate of polysilicon cell |
| CN104131339A (en) * | 2014-07-18 | 2014-11-05 | 中国电子科技集团公司第四十八研究所 | Preparation method of polysilicon chip |
| CN104120491A (en) * | 2014-08-14 | 2014-10-29 | 无锡尚品太阳能电力科技有限公司 | Manufacturing process of polycrystalline silicon cast ingot |
| CN105369350A (en) * | 2015-11-11 | 2016-03-02 | 晶科能源有限公司 | Polysilicon crystal growth technology |
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Application publication date: 20121114 |