CN104928755A - Polysilicon ingot casting method - Google Patents
Polysilicon ingot casting method Download PDFInfo
- Publication number
- CN104928755A CN104928755A CN201410103001.9A CN201410103001A CN104928755A CN 104928755 A CN104928755 A CN 104928755A CN 201410103001 A CN201410103001 A CN 201410103001A CN 104928755 A CN104928755 A CN 104928755A
- Authority
- CN
- China
- Prior art keywords
- forming core
- core source
- layer
- ingot casting
- casting method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention discloses a polysilicon ingot casting method. In the provided method, a first layer of silicon series nucleation source (one or more components of silicon, silicon dioxide, and other silicon materials) is paved on the bottom of a crucible; then a silicon nitride protective layer is sprayed on the first layer of nucleation source; and finally a layer of silicon series nucleation source is paved on the silicon nitride layer, wherein this layer of nucleation source can be the same or different with the first layer of nucleation source and is made of one or more materials. Compared with the prior art that only a single nucleation source is paved, the provided polysilicon ingot casting method can solve the problems that the single layer nucleation source is not stable and the quality is low, and is capable of improving the quality of single layer nucleation source silicon sheets.
Description
Technical field
The present invention relates to ingot casting technology field, forming core source, particularly a kind of polycrystalline silicon ingot casting method.
Background technology
Forming core source technology is the application foundation of high-efficiency polycrystalline ingot casting technology, and mainly by laying some forming core materials in crucible bottom, forming core on forming core material again after the fusing of silicon liquid, makes the technology that forming core and crystal mass improve.
Existing induced nucleation source ingot casting technology main drawback has:
1, crucible bottom forming core source stability is poor, often cannot realize the effect improving ingot quality raising;
2, the forming core source stability such as coating top broken silicon wafers is poor, and cost is high.
Therefore, for above-mentioned situation, how to promote the stability of forming core source inductive technology, become the important technological problems that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
In view of this, the invention provides a kind of polycrystalline silicon ingot casting method, promoted the stability of forming core source inductive technology by double-deck forming core source technology.
For achieving the above object, the invention provides following technical scheme:
A kind of polycrystalline silicon ingot casting method, comprise step S1 and lay forming core source, S2 filler and the long crystalline substance of S3 fusing, it is lay multilayer forming core source in crucible bottom that step S1 lays forming core source, sprays releasing agent and form protective layer between adjacent two-layer forming core source.
Preferably, step S1 laying forming core source specifically comprises:
S11, crucible bottom lay the first layer forming core source, then enter step S12;
S12, spray on the first layer forming core source releasing agent formed protective layer, then enter step S13;
S13, on the protection layer laying second layer forming core source, then enter step S2.
Preferably, in step s 11, the material in the first layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide.
Preferably, in step s 11, the first layer forming core source is dispersed in crucible bottom by sieving the mode spread or spray, then spray adhesive is adsorbed on crucible bottom.
Preferably, in step s 11,50-500g the first layer forming core source is laid in crucible bottom.
Preferably, in step s 12, releasing agent adopts silicon nitride.
Preferably, in step s 13, the material in second layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide.
Preferably, in step s 13, second layer forming core source by spraying, to brush or the mode of spreading adheres on the protection layer.
Preferably, in step s 13,50-500g second layer forming core source is laid on the protection layer.
As can be seen from above-mentioned technical scheme, polycrystalline silicon ingot casting method provided by the invention, by second layer forming core source directly with silicon melt and the contact at long crystalline substance initial stage, the forming core quality of its excellence increases substantially polycrystalline cast ingot quality and namely improves polysilicon chip quality; Releasing agent protective layer is then protection the first layer forming core source and the effect guaranteeing the silicon ingot demoulding; The first layer forming core source then guarantees that forming core source has the contact of forming core source all the time in silicon fusing and long brilliant process, fill up second layer forming core source possible labile factor in nucleation process simultaneously, polycrystalline cast ingot can be contacted with high-quality forming core source all the time at the forming core initial stage, and final production high-quality polycrystalline cast ingot out.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The schema of the polycrystalline silicon ingot casting method that Fig. 1 provides for the embodiment of the present invention.
Embodiment
The invention discloses a kind of polycrystalline silicon ingot casting method, promoted the stability of forming core source inductive technology by double-deck forming core source technology.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 1, the schema of the polycrystalline silicon ingot casting method that Fig. 1 provides for the embodiment of the present invention.
The polycrystalline silicon ingot casting method that the embodiment of the present invention provides; comprise step S1 and lay the subsequent steps such as forming core source, S2 filler and the long crystalline substance of S3 fusing; its core improvement is; it is lay multilayer forming core source in crucible bottom that step S1 lays forming core source, sprays releasing agent and form protective layer between adjacent two-layer forming core source.
This programme specifically provides the double-deck forming core source technology of polycrystalline cast ingot, and step S1 lays forming core source and comprises:
S11, crucible bottom lay the first layer forming core source, then enter step S12;
S12, spray on the first layer forming core source releasing agent formed protective layer, then enter step S13;
S13, on the protection layer laying second layer forming core source, then enter step S2.Certainly, more multi-layered forming core source can also be laid according to actual needs, or in crucible bottom, first spray releasing agent formation protective layer, form the interlayer between the first layer forming core source and crucible bottom.
As can be seen from above-mentioned technical scheme, the polycrystalline silicon ingot casting method that the embodiment of the present invention provides, by second layer forming core source directly with silicon melt and the contact at long crystalline substance initial stage, the forming core quality of its excellence increases substantially polycrystalline cast ingot quality and namely improves polysilicon chip quality; Releasing agent protective layer is then protection the first layer forming core source and the effect guaranteeing the silicon ingot demoulding; The first layer forming core source then guarantees that forming core source has the contact of forming core source all the time in silicon fusing and long brilliant process, fill up second layer forming core source possible labile factor in nucleation process simultaneously, polycrystalline cast ingot can be contacted with high-quality forming core source all the time at the forming core initial stage, and final production high-quality polycrystalline cast ingot out.
Lay single forming core source with prior art in crucible bottom, and fusing is long brilliant; Or on silicon nitride coating, lay single forming core source, and melt long crystalline phase ratio, the polycrystalline silicon ingot casting method that the embodiment of the present invention provides can to solve in polycrystalline cast ingot high-efficiency polycrystalline ingot casting technology individual layer forming core source stability difference and the problem such as quality is low, improves existing individual layer forming core source Si wafer quality.
In the specific embodiment that this programme provides, in step s 11, the material in the first layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide, the such as silicon such as silica flour, quartz sand system forming core source material.
Further, the first layer forming core source is dispersed in crucible bottom by sieving the mode spread or spray, then spray adhesive is adsorbed on bottom quartz crucible, forms the surface needed.
In step s 11, lay 50-500g the first layer forming core source in crucible bottom, under the prerequisite ensureing coat-thickness, those skilled in the art can select suitable consumption according to actual needs.
As preferably, in step s 12, releasing agent adopts silicon nitride, has the features such as thermostability is high, resistance of oxidation is strong, plays protection the first layer forming core source and guarantees the effect of silicon ingot demoulding.
In step s 13, second layer forming core source can be able to be identical or different from the first layer forming core source material therefor.In this programme, the material in second layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide.
In the specific embodiment that this programme provides, in step s 13, second layer forming core source by spraying, to brush or the mode of spreading (by vibration) adheres on the protection layer, to realize even laying.
In step s 13,50-500g second layer forming core source is laid on the protection layer.
In sum, the polycrystalline silicon ingot casting method that the embodiment of the present invention provides comprises the steps:
1, the first layer forming core source adopt the silicon such as silica flour, quartz sand system forming core source material 50-500g by sieve the mode etc. spread or spray be dispersed in crucible bottom again spray adhesive be adsorbed on bottom quartz crucible;
2, again on the first layer forming core source by removers such as spraying silicon nitrides;
3, lay second layer forming core source, silicon nitride spray finishing layer adheres to the silicon system forming core source material 50-500g such as one deck silica flour, quartz sand by spraying, brushing or the mode of spreading again;
Carry out the subsequent step such as filler and the long crystalline substance of fusing afterwards.
This programme by second layer forming core source directly with silicon melt and the contact at long crystalline substance initial stage, the forming core quality of its excellence increases substantially polycrystalline cast ingot quality and namely improves polysilicon chip quality; Silicon nitride coating is then protection the first layer forming core source and the effect guaranteeing silicon ingot demoulding; The first layer forming core source then guarantees that forming core source has the contact of forming core source all the time in silicon fusing and long brilliant process, fill up second layer forming core source possible labile factor in nucleation process simultaneously, polycrystalline cast ingot can be contacted with high-quality forming core source all the time at the forming core initial stage, and final production high-quality polycrystalline cast ingot out.
In this specification sheets, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a polycrystalline silicon ingot casting method, comprise step S1 and lay forming core source, S2 filler and the long crystalline substance of S3 fusing, it is characterized in that, it is lay multilayer forming core source in crucible bottom that step S1 lays forming core source, sprays releasing agent and form protective layer between adjacent two-layer forming core source.
2. polycrystalline silicon ingot casting method according to claim 1, is characterized in that, step S1 lays forming core source and specifically comprises:
S11, crucible bottom lay the first layer forming core source, then enter step S12;
S12, spray on the first layer forming core source releasing agent formed protective layer, then enter step S13;
S13, on the protection layer laying second layer forming core source, then enter step S2.
3. polycrystalline silicon ingot casting method according to claim 2, is characterized in that, in step s 11, the material in the first layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide.
4. polycrystalline silicon ingot casting method according to claim 3, is characterized in that, in step s 11, the first layer forming core source is dispersed in crucible bottom by sieving the mode spread or spray, then spray adhesive is adsorbed on crucible bottom.
5. polycrystalline silicon ingot casting method according to claim 4, is characterized in that, in step s 11, lays 50-500g the first layer forming core source in crucible bottom.
6. the polycrystalline silicon ingot casting method according to claim 1-5 any one, is characterized in that, in step s 12, releasing agent adopts silicon nitride.
7. polycrystalline silicon ingot casting method according to claim 6, is characterized in that, in step s 13, the material in second layer forming core source adopts one or more the mixing in silicon, silicon oxide or silicon carbide.
8. polycrystalline silicon ingot casting method according to claim 7, is characterized in that, in step s 13, second layer forming core source by spraying, to brush or the mode of spreading adheres on the protection layer.
9. polycrystalline silicon ingot casting method according to claim 8, is characterized in that, in step s 13, lays 50-500g second layer forming core source on the protection layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103001.9A CN104928755A (en) | 2014-03-19 | 2014-03-19 | Polysilicon ingot casting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410103001.9A CN104928755A (en) | 2014-03-19 | 2014-03-19 | Polysilicon ingot casting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104928755A true CN104928755A (en) | 2015-09-23 |
Family
ID=54116172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410103001.9A Pending CN104928755A (en) | 2014-03-19 | 2014-03-19 | Polysilicon ingot casting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104928755A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100133415A1 (en) * | 2007-03-26 | 2010-06-03 | Elkem Solar As | Coating composition for a mould |
| CN102776561A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot, preparation method of polycrystalline silicon ingot, polycrystalline silicon slice and crucible for polycrystalline silicon ingot casting |
| CN102776557A (en) * | 2012-08-16 | 2012-11-14 | 江西旭阳雷迪高科技股份有限公司 | Method for casting polycrystalline silicon ingot by using broken silicon wafers as seed crystals |
| CN102798290A (en) * | 2011-05-26 | 2012-11-28 | 日本精细陶瓷有限公司 | Crucible for polysilicon melting and manufacturing method thereof |
| CN103361722A (en) * | 2013-07-23 | 2013-10-23 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingots and preparation method thereof, polycrystalline silicon chips and polycrystalline silicon ingot casting crucible |
-
2014
- 2014-03-19 CN CN201410103001.9A patent/CN104928755A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100133415A1 (en) * | 2007-03-26 | 2010-06-03 | Elkem Solar As | Coating composition for a mould |
| CN102798290A (en) * | 2011-05-26 | 2012-11-28 | 日本精细陶瓷有限公司 | Crucible for polysilicon melting and manufacturing method thereof |
| CN102776561A (en) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot, preparation method of polycrystalline silicon ingot, polycrystalline silicon slice and crucible for polycrystalline silicon ingot casting |
| CN102776557A (en) * | 2012-08-16 | 2012-11-14 | 江西旭阳雷迪高科技股份有限公司 | Method for casting polycrystalline silicon ingot by using broken silicon wafers as seed crystals |
| CN103361722A (en) * | 2013-07-23 | 2013-10-23 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingots and preparation method thereof, polycrystalline silicon chips and polycrystalline silicon ingot casting crucible |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7646078B2 (en) | Die saw crack stopper | |
| TW200628574A (en) | Adhesion promoter, electroactive layer and electroactive device comprising same, and method | |
| CN104769704B (en) | The processing method of semiconductor wafer | |
| WO2019010479A8 (en) | Surgical implant and methods of additive manufacturing | |
| MX2007010255A (en) | Coated or bonded abrasive articles. | |
| WO2006079979A3 (en) | A method of manufacturing a semiconductor device | |
| WO2005103824A3 (en) | Method of forming a metal pattern on a substrate | |
| WO2007139765A3 (en) | Semiconductor-on-diamond devices and associated methods | |
| CN107818990A (en) | A kind of flexible base board and preparation method thereof, display | |
| EP3211657A3 (en) | Method for manufacturing diamond substrate, diamond substrate, and freestanding diamond substrate | |
| WO2010049654A8 (en) | Method for producing a hybrid substrate with an embedded electrically insulating continuous layer | |
| MX2019002009A (en) | Asphalt composition. | |
| CN104275276B (en) | Gap nozzle and the method for manufacturing display device using gap nozzle | |
| FR2979629B1 (en) | METHOD OF FORMING ON A CMC SUBSTRATE CONTAINING SIC OF A SMOOTH COATING OF ICE ASPECT AND CMC PART PROVIDED WITH SUCH COATING | |
| TW201334226A (en) | Jetting a highly reflective layer onto an LED assembly | |
| CN105742228B (en) | Method, semi-conductor device manufacturing method | |
| WO2010101691A3 (en) | Methods of forming patterns | |
| CN104928755A (en) | Polysilicon ingot casting method | |
| KR101418081B1 (en) | Construction method for asphalt pavement using chipping aggragate | |
| WO2019175817A3 (en) | Methods for manufacturing decorative panels and panels obtainable thereby | |
| TW202019726A (en) | Colorful board structure and manufacturing method thereof | |
| DE602004010117D1 (en) | Process for the production of compacted semiconductor wafers by means of layer transfer | |
| EP1780308A3 (en) | Methods and apparatus for manufacturing a component | |
| EP3808879A4 (en) | Method for controlling defect density in silicon single crystal substrate | |
| US1168492A (en) | Method of making tiles. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150923 |
|
| RJ01 | Rejection of invention patent application after publication |