CN105742228B - Method, semi-conductor device manufacturing method - Google Patents
Method, semi-conductor device manufacturing method Download PDFInfo
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- CN105742228B CN105742228B CN201410747720.4A CN201410747720A CN105742228B CN 105742228 B CN105742228 B CN 105742228B CN 201410747720 A CN201410747720 A CN 201410747720A CN 105742228 B CN105742228 B CN 105742228B
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Abstract
The present invention provides a kind of semiconductor making methods, after etching forms TSV hole, increase material mode using 3D and carry out TSV filling, fill conductive powder among TSV hole by 3D printing technique first, then melt powder to form TSV packing material.This method can fill the TSV of small size, high-aspect-ratio, will not generate cavity or air gap；Meanwhile the present invention does not need exposure mask, overcomes defect in the prior art, obtains all good fill method of speed and quality.
Description
Technical field
The present invention relates to method, semi-conductor device manufacturing method fields, particularly, are related to a kind of TSV for increasing material mode using 3D
(Through Silicon Via) fill method.
Background technique
TSV formation is an important topic of field of semiconductor manufacture.Conventional TSV forming method includes the following steps:
1: patterning TSV photoresist layer；
2: etching TSV；
3: removal bottom oxide；
4: forming liner insulating layer and added with padding insulating layer；
5: removal bottom insulation layer；
6: forming seed layer and barrier layer；
7: filling TSV metal, such as plating Cu.
With the continuous diminution of feature sizes of semiconductor devices, the etching of TSV and the filling of subsequent metal become more next
More difficult, semiconductor fabrication process is difficult to obtain the balance of quality and speed.For example, filling mode best at present is ALCVD,
But its handling capacity is very low, influences production capacity.
Accordingly, it is desirable to provide a kind of more effectively TSV fill method, to meet the requirement of filling quality and speed simultaneously.
Summary of the invention
The invention proposes a kind of semiconductor making methods, increase material mode using 3D and carry out TSV filling, to overcome existing skill
The defects of art obtains all good fill method of speed and quality.
The present invention provides a kind of method, semi-conductor device manufacturing method, wherein includes the following steps:
Semiconductor substrate is provided, forms TSV hole in the semiconductor substrate；
Conductive powder is filled in above-mentioned TSV hole using 3D printing technique；
Above-mentioned conductive powder is melted, to form TSV packing material.
According to an aspect of the present invention, when filling conductive powder in above-mentioned TSV hole, only with primary 3D printing
Technique fills up above-mentioned TSV hole.
According to an aspect of the present invention, when filling conductive powder in above-mentioned TSV hole, using multiple 3D printing work
Skill fills up above-mentioned TSV hole；When being filled up above-mentioned TSV hole using multiple 3D printing technique, the described of each filling is led
Electro-powder is identical material or is different materials.
According to an aspect of the present invention, the conductive powder is selected from TiN, W, Al, Cu or two kinds or more of the above material
The combination of kind.
According to an aspect of the present invention, after filling conductive powder in above-mentioned TSV hole using 3D printing technique, on
It states except TSV hole and there is no the conductive powders；The conducting powder being located at except above-mentioned TSV hole using adhesive tape removal
End, to ensure except above-mentioned TSV hole and the conductive powder is not present.
The present invention has the advantages that increase material mode after etching forms TSV hole using 3D and carry out TSV filling, it is first
It first passes through 3D printing technique and fills conductive powder among TSV hole, wherein filling can disposably fill completion, can also be with
It is completed by repeatedly filling；Then, powder is melted to form TSV packing material.This method can fill small size, profundity
The TSV of wide ratio will not generate cavity or air gap；Also, the present invention does not need exposure mask.The present invention overcomes in the prior art
Defect obtains all good fill method of speed and quality.
Detailed description of the invention
Fig. 1 has the substrate of TSV hole
Fig. 2 disposably fills conductive powder
Fig. 3 is partially filled with conductive powder for the first time
Fig. 4 is melted to form packing material
Fig. 5 is melted to form first part's packing material
Fig. 6 is partially filled with conductive powder again
Fig. 7 melts to form second part packing material
Fig. 8 repeatedly filling-fusing to form packing material
Specific embodiment
Hereinafter, describing the present invention by specific embodiment shown in the accompanying drawings.However, it should be understood that these descriptions are
Illustratively, it is not intended to limit the scope of the invention.In addition, in the following description, it is omitted to known features and technology
Description, so as not to unnecessarily obscure the concept of the present invention.
The present invention provides a kind of method, semi-conductor device manufacturing method, is carried out in particular to a kind of using 3D increasing material mode
The method, semi-conductor device manufacturing method of TSV filling.In the following, will be described in semiconductor devices provided by the invention referring to attached drawing 1-8
Manufacturing method.
Firstly, providing semiconductor substrate 1 referring to attached drawing 1, TSV hole 2 is formed on semiconductor substrate 1.Optionally, TSV
Laying 3 is formed on the side wall of hole 2, the material of laying 3 can be insulating materials and be also possible to conductive material, such as
SiO2、HfO2Deng.
Then, referring to attached drawing 2, conductive powder 4 is filled in TSV hole 2 using 3D printing technique.3D printing technique belongs to
A kind of increasing material manufacturing method (Additive method), can accurately, efficiently control quantity and the position of forming material.
In the present invention, conductive powder is filled in TSV hole 2 using 3D printing technique, be on the one hand omitted required for common process
Mask, on the other hand, ensure that the quality and speed of technique.Wherein, the material of conductive powder 4 includes but is not limited to
Two or more of combinations in TiN, W, Al, Cu, or the above material.It is filled and is led in TSV hole 2 using 3D printing technique
After electro-powder 4, except TSV hole and conductive powder 4 is not present.It, can be using in adhesive tape removal position print procedure for this
Conductive powder except TSV hole 2, to ensure except TSV hole 2 and conductive powder is not present.
Next, TSV hole 2 can be filled up only with primary 3D printing technique referring to attached drawing 2；It can also use
Multiple 3D printing technique fills up TSV hole 2, referring to attached drawing 3, wherein firstly, filling first layer conductive powder 41, is only filled out
The TSV hole 2 of partial depth is filled.
Then, referring to attached drawing 4, conductive powder 4 is melted, to form TSV packing material 5.For being partially filled with feelings in Fig. 3
Condition, what it is by the fusing formation of first layer conductive powder 41 is TSV first part packing material 51.The technique for melting conductive powder 4 is excellent
It is selected as laser annealing.Melting process including laser annealing does not need additional mask, meanwhile, by by conducting powder
End is melted and forming material, can obtain the packing material with good quality to avoid the generation of cavity or air gap, in addition,
Such technique also has good production efficiency.Especially laser annealing, can be according to TSV domain come surface sweeping TSV hole
Position, more accurately carry out melting process, obtain better technological effect.
For foring the device architecture of TSV first part packing material 51,3D printing work later can be passed through
Skill continues to fill conductive powder 42 in hole, referring to attached drawing 6.Using such multiple 3D printing process filling TSV hole
When, the conductive powder of each filling can be identical material, or different materials, it completely can be according to the requirement to device
To customize.Then, referring to attached drawing 7, TSV second part packing material 52 is formed using with same melting process before.Pass through
Multiple filling-melting process, until finally TSV hole is filled up completely, referring to attached drawing 8.Multiple fill process compares single
Fill process, the advantage of can be obtained are: preferably controlling the quality and holes filling quality of packing material, utmostly
The appearance of air gap and cavity is avoided, and packing material type can be more finely controlled, to meet the needs of different components.
3D printing filling-fusing in the present invention forms the technique of TSV structure, can be simultaneous with existing semiconductor technology
Hold, for example, can be by may be programmed anti-fuse (Programmable Antifuse) or flush memory device (Flash memory)
Technique manufacture.
In conclusion carrying out TSV after etching forms TSV hole using such a increasing material mode of 3D printing and filling out
It fills, conductive powder is filled among TSV hole by 3D printing technique first, then melt powder to form TSV filling material
Material, wherein filling only can be completed by the filling of single-melting process, multiple filling-melting process weight can also be used
It is multiple to carry out, to obtain the TSV packing material with more preferable effect.This method can fill the TSV of small size, high-aspect-ratio, no
Cavity or air gap can be generated；Meanwhile the present invention does not need exposure mask, overcomes defect in the prior art, obtains speed and matter
Measure all good fill method.
The present invention is described above by reference to the embodiment of the present invention.But these embodiments are used for the purpose of saying
Bright purpose, and be not intended to limit the scope of the invention.The scope of the present invention is limited by appended claims and its equivalent.
The scope of the present invention is not departed from, those skilled in the art can make a variety of substitutions and modifications, these substitutions and modifications should all be fallen
Within the scope of the present invention.
Claims (7)
1. a kind of method, semi-conductor device manufacturing method, which comprises the steps of:
Semiconductor substrate is provided, forms TSV hole in the semiconductor substrate；
Conductive powder is filled in above-mentioned TSV hole using 3D printing technique；
Above-mentioned conductive powder is melted, to form TSV packing material.
2. the method according to claim 1, wherein in above-mentioned TSV hole fill conductive powder when, only with
Primary 3D printing technique fills up above-mentioned TSV hole.
3. the method according to claim 1, wherein in above-mentioned TSV hole fill conductive powder when, using more
Secondary 3D printing technique fills up above-mentioned TSV hole.
4. according to the method described in claim 3, it is characterized in that, above-mentioned TSV hole is filled out using multiple 3D printing technique
The conductive powder of Man Shi, each filling are identical material or are different materials.
5. method according to claim 1-4, which is characterized in that the conductive powder is selected from TiN, W, Al, Cu
Or the above two or more of combinations of material.
6. method according to claim 1-4, which is characterized in that using 3D printing technique in above-mentioned TSV hole
After middle filling conductive powder, except above-mentioned TSV hole and the conductive powder is not present.
7. according to the method described in claim 6, it is characterized in that, being located at the institute except above-mentioned TSV hole using adhesive tape removal
Conductive powder is stated, to ensure except above-mentioned TSV hole and the conductive powder is not present.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410747720.4A CN105742228B (en) | 2014-12-09 | 2014-12-09 | Method, semi-conductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410747720.4A CN105742228B (en) | 2014-12-09 | 2014-12-09 | Method, semi-conductor device manufacturing method |
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| CN105742228A CN105742228A (en) | 2016-07-06 |
| CN105742228B true CN105742228B (en) | 2019-04-19 |
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| CN201410747720.4A Active CN105742228B (en) | 2014-12-09 | 2014-12-09 | Method, semi-conductor device manufacturing method |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107520054A (en) * | 2017-08-21 | 2017-12-29 | 广东美的制冷设备有限公司 | Repel pole plate and preparation method thereof and air purifier |
| CN108550635A (en) * | 2018-04-26 | 2018-09-18 | 欧贝黎新能源科技股份有限公司 | A method of MWT battery is made using 3D printing technique |
| CN109622968A (en) * | 2019-02-19 | 2019-04-16 | 南通理工学院 | A kind of TSV encapsulation 3D printer and Method of printing |
| CN112210309A (en) * | 2020-10-12 | 2021-01-12 | 苏州盛达飞智能科技股份有限公司 | Method for manufacturing electric-conduction heat-conduction foam adhesive tape |
| CN115440654A (en) * | 2022-04-14 | 2022-12-06 | 合肥本源量子计算科技有限责任公司 | Superconducting interconnection structure and preparation method thereof |
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|---|---|---|---|---|
| US6258720B1 (en) * | 1998-02-10 | 2001-07-10 | Stmicroelectronics S.A. | Method of formation of conductive lines on integrated circuits |
| US20100154211A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Method for manufacturing wiring board and method for manufacturing inkjet printhead substrate |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
-
2014
- 2014-12-09 CN CN201410747720.4A patent/CN105742228B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258720B1 (en) * | 1998-02-10 | 2001-07-10 | Stmicroelectronics S.A. | Method of formation of conductive lines on integrated circuits |
| US20100154211A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Method for manufacturing wiring board and method for manufacturing inkjet printhead substrate |
| CN102915949A (en) * | 2011-08-01 | 2013-02-06 | 中国科学院微电子研究所 | Method for embedding metal material in substrate |
| CN104167411A (en) * | 2014-08-19 | 2014-11-26 | 中国科学院半导体研究所 | LED array structure |
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| CN105742228A (en) | 2016-07-06 |
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