CN105742228A

CN105742228A - Semiconductor device manufacturing method

Info

Publication number: CN105742228A
Application number: CN201410747720.4A
Authority: CN
Inventors: 钟汇才; 赵超; 朱慧珑
Original assignee: Institute of Microelectronics of CAS
Current assignee: Institute of Microelectronics of CAS
Priority date: 2014-12-09
Filing date: 2014-12-09
Publication date: 2016-07-06
Anticipated expiration: 2034-12-09
Also published as: CN105742228B

Abstract

The invention provides a semiconductor manufacturing method. After a TSV hole is formed through etching, a 3D additive manufacturing mode is employed for TSV filling. The method comprises the steps: firstly placing conductive powder in the TSV hole through employing the 3D printing technology; and secondly enabling the powder to be melted, so as to form a TSV filling material. The method can achieve the filling of small-size TSV with a high depth to width ratio, and cannot generate a hole or gap. Meanwhile, the method does not need a mask, irons out the defects in the prior art, and obtains the optimal speed and quality.

Description

Method, semi-conductor device manufacturing method

Technical field

The present invention relates to method, semi-conductor device manufacturing method field, especially, relate to a kind of TSV (ThroughSiliconVia) fill method adopting 3D increasing material mode.

Background technology

TSV formation is an important topic of field of semiconductor manufacture.Conventional TSV forming method comprises the steps:

1: patterning TSV photoresist layer；

2: etch TSV；

3: remove bottom oxide；

4: form liner insulating barrier and added with padding insulating barrier；

5: remove bottom insulation layer；

6: form Seed Layer and barrier layer；

7: fill TSV metal, for instance plating Cu.

Along with constantly reducing of feature sizes of semiconductor devices, the etching of TSV and subsequently metal filled become more and more difficult, and semiconductor fabrication process is difficult to obtain the balance of quality and speed.Such as, filling mode best at present is ALCVD, but its handling capacity is very low, affects production capacity.

Accordingly, it is desirable to provide one more effectively TSV fill method, to meet the requirement of filling quality and speed simultaneously.

Summary of the invention

The present invention proposes a kind of semiconductor making method, adopts 3D to increase material mode and carries out TSV filling, to overcome defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.

The present invention provides a kind of method, semi-conductor device manufacturing method, wherein, comprises the steps:

Semiconductor substrate is provided, this Semiconductor substrate is formed TSV hole；

3D is adopted to print technique filled conductive powder in above-mentioned TSV hole；

Above-mentioned conductive powder is melted, to form TSV packing material.

According to an aspect of the present invention, in above-mentioned TSV hole during filled conductive powder, print technique only with 3D once and above-mentioned TSV hole is filled up.

According to an aspect of the present invention, in above-mentioned TSV hole during filled conductive powder, adopt 3D repeatedly to print technique and above-mentioned TSV hole is filled up；When adopting 3D printing technique repeatedly to be filled up by above-mentioned TSV hole, the described conductive powder that each time is filled is identical material or is different materials.

According to an aspect of the present invention, described conductive powder is selected from two or more the combination of TiN, W, Al, Cu or above material.

According to an aspect of the present invention, 3D is adopted to print technique in above-mentioned TSV hole after filled conductive powder, outside above-mentioned TSV hole and be absent from described conductive powder；Adhesive tape is adopted to remove the described conductive powder being positioned at outside above-mentioned TSV hole, to guarantee outside above-mentioned TSV hole and to be absent from described conductive powder.

It is an advantage of the current invention that: after etching forms TSV hole, have employed 3D increasing material mode and carry out TSV filling, first pass through 3D printing technique filled conductive powder among TSV hole, wherein, filling can complete in disposable filling, it is also possible to by repeatedly having filled；Then, by powder smelting to form TSV packing material.The method can fill the TSV of small size, high-aspect-ratio, will not produce cavity or air gap；Further, the present invention is not required to mask.Instant invention overcomes defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.

Accompanying drawing explanation

Fig. 1 has the substrate of TSV hole

The disposable filled conductive powder of Fig. 2

Fig. 3 first time is partially filled with conductive powder

Fig. 4 melts to form packing material

Fig. 5 melts to form Part I packing material

Fig. 6 is partially filled with conductive powder again

Fig. 7 melts formation Part II packing material

Fig. 8 repeatedly fills-melts and forms packing material

Detailed description of the invention

Hereinafter, by the specific embodiment shown in accompanying drawing, the present invention is described.However, it should be understood that these descriptions are illustrative of, and it is not intended to limit the scope of the present invention.Additionally, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring idea of the invention.

The present invention provides a kind of method, semi-conductor device manufacturing method, increases material mode in particular to a kind of 3D of employing and carries out the method, semi-conductor device manufacturing method of TSV filling.Below, referring to accompanying drawing 1-8, will be described in method, semi-conductor device manufacturing method provided by the invention.

First, referring to accompanying drawing 1, it is provided that Semiconductor substrate 1, TSV hole 2 is formed on semiconductor substrate 1.Alternatively, the sidewall of TSV hole 2 being formed with laying 3, the material of laying 3 can be insulant can also be conductive material, for instance SiO₂、HfO₂Deng.

Then, referring to accompanying drawing 2,3D is adopted to print technique filled conductive powder 4 in TSV hole 2.3D prints technique and belongs to a kind of increasing material manufacture method (Additivemethod), it is possible to accurately, efficiently control the quantity and position that form material.In the present invention, adopt 3D to print technique filled conductive powder in TSV hole 2, eliminate the mask required for common process on the one hand, on the other hand, it is ensured that the quality of technique and speed.Wherein, the material of conductive powder 4 includes, but are not limited to TiN, W, Al, Cu or the combination of two or more in above material.3D is adopted to print technique in TSV hole 2 after filled conductive powder 4, outside TSV hole and be absent from conductive powder 4.For this, it is possible to adopt adhesive tape to remove the conductive powder being positioned in position print procedure outside TSV hole 2, to guarantee outside TSV hole 2 and to be absent from conductive powder.

It follows that referring to accompanying drawing 2, it is possible to print technique only with 3D once and TSV hole 2 is filled up；3D can also being adopted repeatedly to print technique filled up by TSV hole 2, referring to accompanying drawing 3, wherein, first, fill ground floor conductive powder 41, it has been only filled with the TSV hole 2 of partial depth.

Then, referring to accompanying drawing 4, conductive powder 4 is melted, to form TSV packing material 5.For being partially filled with situation in Fig. 3, what ground floor conductive powder 41 was melted formation is TSV Part I packing material 51.The technique of fusing conductive powder 4 is preferably laser annealing.The melting process including laser annealing is not required to extra mask, meanwhile, by conductive powder fusing is formed material, the generation of cavity or air gap can be avoided, obtain the packing material with good quality, it addition, such technique also has good production efficiency.Especially laser annealing, it can come the position of surface sweeping TSV hole according to TSV domain, carries out melting process more accurately, it is thus achieved that better technological effect.

For the device architecture defining TSV Part I packing material 51, it is possible to print technique by 3D afterwards, continue filled conductive powder 42 in hole, referring to accompanying drawing 6.When adopting such 3D repeatedly to print process filling TSV hole, the conductive powder of each filling can be identical material, it is also possible to for different materials, can customize according to the requirement of device completely.Then, referring to accompanying drawing 7, adopt and form TSV Part II packing material 52 with melting process same before.By filling-melting process repeatedly, until being finally filled up completely with TSV hole, referring to accompanying drawing 8.Repeatedly fill process is compared single fill process, the advantage of can be obtained with is in that: better control over quality and the holes filling quality of packing material, at utmost avoid the appearance in air gap and cavity, and can more be finely controlled packing material kind, to meet the demand of different components.

3D in the present invention prints and fills-melt the technique forming TSV structure, can be compatible with existing semiconductor technology, for example, it is possible to manufactured by the technique of anti-fuse able to programme (ProgrammableAntifuse) or flush memory device (Flashmemory).

In sum, after etching forms TSV hole, have employed 3D printing such a increasing material mode and carry out TSV filling, first pass through 3D printing technique filled conductive powder among TSV hole, then by powder smelting to form TSV packing material, wherein it is possible to only complete to fill by the filling-melting process of single, filling-melting process repeatedly can also be adopted to repeat, to obtain the TSV packing material with better effect.The method can fill the TSV of small size, high-aspect-ratio, will not produce cavity or air gap；Meanwhile, the present invention is not required to mask, overcomes defect of the prior art, it is thus achieved that the fill method that speed and quality are all good.

Above by reference to embodiments of the invention, the present invention is described.But, the purpose that these embodiments are merely to illustrate that, and it is not intended to restriction the scope of the present invention.The scope of the invention and equivalent limits.Without departing from the scope of the present invention, those skilled in the art can make a variety of substitutions and modifications, and these substitutions and modifications all should fall within the scope of the present invention.

Claims

1. a method, semi-conductor device manufacturing method, it is characterised in that comprise the steps:

Above-mentioned conductive powder is melted, to form TSV packing material.

2. method according to claim 1, it is characterised in that in above-mentioned TSV hole during filled conductive powder, prints technique only with 3D once and is filled up by above-mentioned TSV hole.

3. method according to claim 1, it is characterised in that in above-mentioned TSV hole during filled conductive powder, adopts 3D repeatedly to print technique and is filled up by above-mentioned TSV hole.

4. method according to claim 3, it is characterised in that when adopting 3D printing technique repeatedly to be filled up by above-mentioned TSV hole, the described conductive powder that each time is filled is identical material or is different materials.

5. the method according to any one of claim 1-4, it is characterised in that described conductive powder is selected from two or more the combination of TiN, W, Al, Cu or above material.

6. the method according to any one of claim 1-4, it is characterised in that adopt 3D to print technique in above-mentioned TSV hole after filled conductive powder, outside above-mentioned TSV hole and be absent from described conductive powder.

7. method according to claim 6, it is characterised in that adopt adhesive tape to remove the described conductive powder being positioned at outside above-mentioned TSV hole, to guarantee outside above-mentioned TSV hole and to be absent from described conductive powder.