CN105648425B - A kind of chemical vapor deposition unit and its temperature control method - Google Patents
A kind of chemical vapor deposition unit and its temperature control method Download PDFInfo
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- CN105648425B CN105648425B CN201410668535.6A CN201410668535A CN105648425B CN 105648425 B CN105648425 B CN 105648425B CN 201410668535 A CN201410668535 A CN 201410668535A CN 105648425 B CN105648425 B CN 105648425B
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Abstract
A kind of chemical vapor deposition unit, including：Reaction chamber；The pedestal of the reaction chamber bottom is set to, is used to support one or more pending substrates；For heating the heating unit of the pedestal and substrate；Including the first inlet duct and the second inlet duct, reaction zone is formed between the gas shower component and the pedestal for the gas shower component being set at the top of the reaction chamber；It is set on gas shower component and is used for capping chamber and the cover comprising cooling device；Slit is formed between the cover and the gas shower component；First temperature measuring equipment, for measuring gas shower component temperature；Temperature control feeder, for the gas after proportioning to be matched and supplied according to the gas shower component temperature of measurement to A and two kinds of gases of B to the slit.The present invention realizes the accurate control of gas shower component temperature by adjusting the gas ratio between gas shower component and reaction cavity cooling-part.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, more particularly to a kind of chemical vapor deposition unit and its temperature control side
Method.
Background technology
Chemical vapor deposition (Chemical vapor deposition, abbreviation CVD) is reactive material under gaseous condition
It chemically reacting, generation solid matter is deposited on the solid matrix surface of heating, and then the technology of solid material is made,
It is achieved by chemical vapor deposition unit.Specifically, reaction gas is passed through reative cell by CVD device by inlet duct
In, and controlling the reaction conditions such as the pressure of reative cell, temperature so that reaction gas reacts, so as to complete depositing operation step
Suddenly.In order to deposit required film, generally require and a variety of different reaction gas are passed through into reative cell, and also need to reative cell
In be passed through other nonreactive gas such as carrier gas or purge gas, therefore need in CVD device to set multiple inlet ducts.Below
It is with metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) device
Example introduces the CVD device for including multiple inlet ducts in the prior art.
MOCVD is mainly used for the iii-vs such as gallium nitride, GaAs, indium phosphide, zinc oxide, II-VI group compound and alloy
Thin layer monocrystalline functional structure material preparation, constantly expand with the application range of above-mentioned functional structure material, MOCVD devices
Have become one of important device of chemical vapor deposition unit.MOCVD is generally with II races or III group metal organic source and VI races
Or V races hydride source etc., by the use of hydrogen or nitrogen as carrier gas, is carried out as reaction gas in a manner of pyrolysis on substrate
Vapor phase epitaxial growth, so as to grow various II-VI compound semiconductors, Group III-V compound semiconductor and theirs is polynary
The thin layer monocrystal material of solid solution.Due to the transmission conditions of II races or III group metal organic source and VI races or V races hydride source not
Together, it is therefore desirable to respectively be passed II races or III group metal organic source and VI races or V races hydride source by different inlet ducts
Transport to surface.
MOCVD devices of the prior art generally comprise：Reaction chamber；The pedestal being set in one shaft of reaction chamber bottom,
It is used to support one or more pending substrates；Heating unit, for heating the pedestal and substrate, the heating unit has
Control loop；Spray assemblies at the top of the reaction chamber, including gas distribution member and air inlet pipeline, the gas shower
Reaction zone is formed between component and the pedestal；The gas shower component is respectively by II races or III group metal organic source and VI
In race or the hydride source transmission distribution to the reaction zone of V races；It is set to the lid that capping chamber is used on gas shower component
Body.
III group metal organic source and V races hydride source gas are heated to same temperature by MOCVD devices in the prior art,
The poor quality of the film of end reaction deposition, and film deposition rate is low, production cost is high.In addition to MOCVD devices
In other CVD devices, there is also the different situation of the heating temperature needed for differential responses gas, when by these differential responses gases
Same temperature is heated to, similarly, the film quality of end reaction deposition is very poor, and film deposition rate is low, production cost is high.
Similarly, in other CVD devices, there is also the situations that differential responses gas needs different temperatures.
Therefore, just there is the CVD device for including cooling body, control and adjusted Bu Tong instead respectively by cooling body
The temperature of gas is answered, so as to provide different temperature for different reaction gas, realizes best reaction condition.
Referring to Publication No. CN102877040 Chinese patents, it discloses the changes of a kind of feeder and the application device
Vapor phase growing apparatus is learned, including：One load plate carries an at least substrate；And a feeder, the load plate and the feeder it
Between form a reaction compartment, which is provided after multiple reactants carry out a reaction to the reaction compartment, generation at least one
On product to this at least a substrate, which includes：Multiple reactant pipelines, carry those reactants respectively；It is and more
A temperature control pipeline, those temperature control pipelines and those reactant pipeline contacts, to control the temperature of those reactants.One is further included to add
Hot cell provides the temperature that the reaction compartment carries out the reaction, which is located between the heating unit and the feeder.
It further includes：One cover, above the feeder, those reactants are sent to those reactions by the lid portion outside by the cover
Property management road.Each of temperature control tube road further includes an at least temperature sensor.Further included on each of reactant pipeline to
A few temperature sensor.Each of temperature control pipeline is located at multiple regions, according to different zones situation, each of temperature control respectively
Pipeline corresponds to a flow speed or a fluid temperature (F.T.) for the internal fluid of adjustment.
But chemical deposition device is during the reaction, and the heating and reaction gas due to heating unit are to hot conduction, meeting
Lead to the temperature rise of spray assemblies in itself, reaction gas reacted on again in itself so as to the raising of spray assemblies own temperature,
Cause cooling body is difficult to realize to design according to expectation to carry out accurate temperature control to differential responses gas.
Therefore, how spray assemblies itself are realized with temperature control and is adjusted, so as to fulfill being designed according to expectation to difference
Reaction gas, which carries out accurate temperature control, just becomes the technical issues of urgently to be resolved hurrily.
Invention content
The object of the present invention is to provide a kind of chemical vapor deposition units, and accurate temperature control is realized to spray assemblies itself
System and adjusting.
To solve the above problems, the present invention provides a kind of chemical vapor deposition unit, including：
Reaction chamber, to handle the substrate being positioned in the reaction chamber；
Pedestal is set to inside the reaction chamber, and the pedestal is used to support one or more pending substrates；
Heating unit, for heating the pedestal and the substrate, the heating unit has control loop；
Gas shower component, is set to the top of the reaction chamber, and the gas shower component includes the first inlet duct
With the second inlet duct, reaction zone is formed between the gas shower component and the pedestal；The gas shower component will be anti-
Gas is answered to distribute to the reaction zone；
Cover, for closing the reaction chamber, the cover includes a cooling device, and the cooling device is arranged on described
Spray assemblies deviate from the side of the pedestal；The gas shower component is between the cover and the pedestal；
Slit is formed between the cover and the gas shower component；
First temperature measuring equipment, for measuring the temperature of the gas shower component；
Temperature control feeder, mixed carrier gas is supplied in the slit, the mixed carrier gas includes the first carrier gas
With the second carrier gas, the temperature control feeder according to the temperature of the gas shower component, accordingly adjust first carrier gas with
The proportioning of second carrier gas.
Preferably, the first spacer is provided between first inlet duct and the cooling device, described second
The second spacer is provided between inlet duct and the cooling device.
Preferably, the cooling device is stacked with first inlet duct, the cooling device and described second
Inlet duct is stacked, and first inlet duct is arranged side by side with second inlet duct.
Preferably, the coefficient of heat conduction of first spacer is more than the coefficient of heat conduction of second spacer.
Preferably, first inlet duct carries out heat exchange, institute by first spacer and the cooling device
It states the second inlet duct and heat exchange is carried out by second spacer.
Preferably, first carrier gas include at least one of hydrogen or helium, second carrier gas include nitrogen or
At least one of argon gas.The ratio of the first carrier gas is higher in the mixed carrier gas, measured by first temperature measuring equipment
Temperature it is lower.
Further, the gas shower component temperature that the temperature control feeder is measured according to first temperature measuring equipment
The degree supply mixed carrier gas.
Further, the reaction chamber also has one for measuring the second temperature measuring device of the substrate temperature.Institute
It states temperature control feeder and supplies the mixed carrier gas according to the substrate temperature that the second temperature measuring device measures.
Preferably, the first temperature measuring equipment temperature sensor includes the thermoelectricity of attachment with second temperature measuring device
Occasionally use at least one of non-contact type temperature measurement tool based on infra-red radiation, fluorescence or pyrometry.
Preferably, the slit width is less than 5mm.
Preferably, the CVD device can be one kind in MOCVD devices, LPCVD devices, PCVD devices or ALD devices
It is or a variety of.
Preferably, the III group metal organic source includes Ga (CH3) 3, In (CH3) 3, A1 (CH3) 3,3 gas of Ga (C2H5)
One or more in body, decomposition temperature is greater than or equal to 35 DEG C and less than or equal to 600 DEG C.
Preferably, V races hydride source includes one or more in NH3, PH3, AsH3 gas, and decomposition temperature is big
In or equal to 135 DEG C and less than or equal to 800 DEG C.Therefore, to reach best thin film deposition effect, first inlet duct
Temperature difference between 300 and second inlet duct 400 should be greater than or equal to 100 DEG C and less than or equal to 600 DEG C.
Preferably, first inlet duct includes the first upper surface, and first upper surface is spaced by described first
Part is contacted with cooling device, and second inlet duct includes the second upper surface, and second upper surface is by between described second
Spacing body is contacted with cooling device.
Preferably, first inlet duct further includes first lower surface opposite with the first surface, and described second
Inlet duct further includes second lower surface opposite with the first surface；Preferably, first upper surface and described first
The ratio of lower surface is more than the ratio of second upper surface and second lower surface.
Preferably, the material of first spacer can be graphite, silicon carbide, can also be graphite and silicon carbide compound
Material or silicon carbide lamination material, the material composition of second spacer can include steel.Preferably, first spacer
Material for graphite, the material of second spacer is stainless steel.
Preferably, the thickness of first spacer can be greater than or equal to 0.1mm and be less than or equal to 2mm, such as：
0.1mm, 0.5mm, 1mm or 2mm；The thickness of second spacer can also be greater than or equal to 0.1mm and be less than or equal to
2mm, such as：0.1mm, 0.5mm, 1mm or 2mm.
The thickness of first spacer and the thickness of second spacer may be the same or different.Preferably,
The thickness of first spacer is less than the thickness of the second spacer, so as to further such that the temperature of the first inlet duct
Less than the temperature of the second inlet duct.
Preferably, the coefficient of heat conduction of first spacer can be greater than or equal to the heat transfer system of the first inlet duct
Number, the coefficient of heat conduction of the second spacer can also be greater than or equal to the coefficient of heat conduction of the second inlet duct, described first into
The coefficient of heat conduction of device of air can be greater than or equal to the coefficient of heat conduction of second inlet duct.
Preferably, it is described when the coefficient of heat conduction of the first inlet duct is more than the coefficient of heat conduction of the second inlet duct
The material of first inlet duct is different from the material of second inlet duct.Such as：The material of first inlet duct can be stone
Ink or silicon carbide, the material of first inlet duct can also be graphite and composite material of silicon carbide or silicon carbide lamination material
Material, the material composition of the second inlet duct can include steel, preferably stainless steel.
Preferably, it is described when the coefficient of heat conduction of the first inlet duct is equal to the coefficient of heat conduction of the second inlet duct
The material of first inlet duct can be identical with the material of second inlet duct.Such as：First inlet duct and the second air inlet
The material of device includes one or more in graphite, silicon carbide, steel.
Temperature controlled method is carried out to spray assemblies using above-mentioned chemical deposition equipment, this method includes：
Step 1：Carry out chemical deposition reaction；
Step 2：Measure the gas shower component temperature；
Step 3：Measure the reaction chamber substrate temperature；
Step 4：The first carrier gas and second is provided according to the gas shower component temperature of measurement and the substrate temperature
The mixed carrier gas of carrier gas.
Preferably, the above method further includes, and improves the proportioning of first carrier gas and reduces the gas shower component temperature,
Or reduce the proportioning raising gas shower component temperature of first carrier gas.
First carrier gas is preferably hydrogen, and second carrier gas is preferably nitrogen.But the first carrier gas and the second carrier gas are simultaneously
These gases are not limited to, but can be the gaseous species that above-mentioned adjustment gas shower component temperature arbitrarily can be achieved.
Compared with prior art, the beneficial effects of the present invention are：
The chemical vapor deposition unit of the present invention, by reducing the proportioning of hydrogen, carries under the premise of other conditions are constant
The proportioning of high nitrogen, specifically, when the mixed proportion of hydrogen and nitrogen is become 0: 100 from 100: 0, the temperature of spray assemblies by
One relatively low equilibrium temperature starts to steeply rise, and quickly reaches a new equilibrium temperature.Therefore, of the present inventionization
Learning vapor phase deposition device realizes the control to spray assemblies own temperature and adjusting, it is achieved thereby that being designed according to expectation to not
Accurate temperature control is carried out with reaction gas.
In addition, the heat that the first heretofore described inlet duct absorbs with the cooling device easily by carrying out heat
It exchanges and discharges, so as to which the cooling that the cooling device is more than to the second inlet duct the cooling effect of the first inlet duct is imitated
Fruit, so that the temperature of first inlet duct is less than the temperature of second inlet duct.In addition, further pass through control
The ratio of the first upper surface and first lower surface for making first inlet duct is more than or equal to second inlet duct
The second upper surface and second lower surface ratio, can with further such that first inlet duct temperature be less than institute
State the temperature of the second inlet duct, so as to avoid the low gas of decomposition temperature at high temperature first occur predecomposition after again with decomposition
The high gas reaction of temperature simultaneously generates a large amount of solid particles, reduces the solid particle being deposited on spray assemblies and is detached to film
On possibility, also avoiding the high gas of decomposition temperature can not be decomposed at low temperature, improve the rate of thin film deposition,
The quality of film is improved, saves raw material, reduces cleaning and production cost.
Further, the first spacer is provided between heretofore described first inlet duct and the cooling device,
The second spacer, the cooling device and first air inlet are provided between second inlet duct and the cooling device
Device is stacked, and the cooling device is stacked with second inlet duct, first inlet duct and described the
Two inlet ducts are arranged side by side, and the coefficient of heat conduction of first spacer is more than the coefficient of heat conduction of second spacer,
First inlet duct carries out heat exchange by first spacer and the cooling device, and second inlet duct leads to
It crosses second spacer and carries out heat exchange, since the coefficient of heat conduction of first spacer is more than second spacer
The coefficient of heat conduction, therefore exchange rate second inlet duct between first inlet duct and the cooling device
Exchange rate is fast between the cooling device, and the heating unit is in heating process, since first air inlet fills
Put, the second inlet duct it is different from the exchange rate between the cooling device, therefore the first inlet duct and described second
Inlet duct with different temperature, will avoid the low gas of decomposition temperature first occur at high temperature after predecomposition again with decomposition
The high gas reaction of temperature simultaneously generates a large amount of solid particles, reduces the solid particle being deposited on spray assemblies and is detached to film
On possibility, also avoiding the high gas of decomposition temperature can not be decomposed at low temperature, improve the rate of thin film deposition,
The quality of film is improved, saves raw material, reduces cleaning and production cost.
Description of the drawings
Fig. 1 is the structure diagram of the chemical deposition device with cooling device in the prior art；
Fig. 2 is the structure diagram of the CVD device of the embodiment of the present invention one；
Fig. 3 is the structure diagram that AA ' directions obtain along Fig. 2；
Fig. 4 is the front and rear spray assemblies temperature variation of mixed gases matching adjustment；
Fig. 5 is the structure diagram of the CVD device of the embodiment of the present invention two；
Fig. 6 is the structure diagram that BB ' directions obtain along Fig. 4.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented using other different from other manner described here, therefore the present invention is not limited by following public specific embodiment
System.
Embodiment one
Fig. 2 is the structure diagram of the present embodiment CVD device, and Fig. 3 is the structure diagram that AA ' directions obtain along Fig. 2.
As shown in Figures 2 and 3, the CVD device described in the present embodiment includes：
Reaction chamber 600, to handle the substrate being positioned in the reaction chamber 600；It is set to the reaction chamber
Pedestal 100 inside 600, the pedestal 100 are used to support one or more pending substrates；For heat the pedestal with
The heating unit 120 of substrate, the heating unit 120 have control loop；It is set to the gas spray at 600 top of reaction chamber
Component is drenched, the gas shower component includes the first inlet duct 300 and the second inlet duct 400, the gas shower component
Reaction zone is formed between the pedestal 100, the gas shower component will be in reaction gas distribution to the reaction zone；For
Close the cover of the reaction chamber, the cover includes a cooling device 200, the gas shower component be located at the cover and
Between the pedestal, slit is formed between the cover and the gas shower component, the slit width is less than 5mm；With
In the first temperature measuring equipment of the temperature for measuring the gas shower component；Mixed carrier gas is supplied in the slit
Temperature control feeder, the mixed carrier gas include the first carrier gas and the second carrier gas, the temperature control feeder is according to the gas
The temperature of body spray assemblies accordingly adjusts the proportioning of first carrier gas and second carrier gas.
The present embodiment sets the first spacer 700 between first inlet duct 300 and the cooling device 200,
Second spacer 800 is set between second inlet duct 400 and the cooling device 200, the cooling device 200 with
First inlet duct 300 is stacked, and the cooling device 200 is stacked with second inlet duct 400, described
First inlet duct 300 is arranged side by side with second inlet duct 400, and the coefficient of heat conduction of first spacer 700 is big
In the coefficient of heat conduction of second spacer 800, first inlet duct 300 passes through first spacer 700 and institute
It states cooling device 200 and carries out heat exchange, second inlet duct 400 carries out heat exchange by second spacer 800, by
It is more than the coefficient of heat conduction of second spacer 800, therefore described first in the coefficient of heat conduction of first spacer 700
Exchange rate second inlet duct 400 and the cooling device between inlet duct 300 and the cooling device 200
Exchange rate is fast between 200, in the heating unit in heating process, due to first inlet duct 300, described
The difference of exchange rate between second inlet duct 400 and the cooling device 200, thus the first inlet duct 300 with
Second inlet duct 400 avoids with different temperature the low gas of decomposition temperature and pre- point first occurs at high temperature
The gas reaction high with decomposition temperature and a large amount of solid particles are generated again after solution, reduce the solid being deposited on spray assemblies
Grain is detached to the possibility on film, and also avoiding the high gas of decomposition temperature can not be decomposed at low temperature, be improved thin
The rate of film deposition improves the quality of film, saves raw material, reduces cleaning and production cost.
In the present embodiment, the first gas is described including one or more in reacting precursor, carrier gas, purge gas
Second gas also includes one or more in reacting precursor, carrier gas, purge gas.
In the present embodiment, the CVD device is one in MOCVD devices, LPCVD devices, PCVD devices or ALD devices
Kind.Below by the CVD device for for MOCVD devices, i.e., described first inlet duct 300, which is used for transmission III group metal, to be had
Machine source, second inlet duct 400 illustrate for being used for transmission V races hydride source, due to the requirement of MOCVD growth techniques
It is high, it usually needs high temperature control, and the proportioning of accurate control reaction gas is needed, and III group metal organic source
The decomposition temperature of decomposition temperature and V races hydride source has larger difference, therefore when control makes III group metal organic source and V races hydrogen
During the temperature difference in compound source, the generation of side reaction can be reduced, improves the quality of Group III-V compound semiconductor and deposition speed
Rate prevents the waste of III group metal organic source and V races hydride source.The temperature of first inlet duct 300 is less than institute at this time
The temperature of the second inlet duct 400 is stated, but should not be limited the scope of the invention with this.It should be noted that first into
While device of air 300 transmits III group metal organic source and the second inlet duct 400 transmission V race's hydride sources, the first air inlet dress
Put 300 and second inlet duct 400 can be with simultaneous transmission carrier gas, such as：Hydrogen or nitrogen.
The III group metal organic source includes Ga (CH3)3、In(CH3)3、Al(CH3)3、Ga(C2H5)3, one kind in gas
Or it is a variety of, decomposition temperature is greater than or equal to 35 DEG C and less than or equal to 600 DEG C.V races hydride source includes NH3、PH3、
AsH3One or more in gas, decomposition temperature is greater than or equal to 135 DEG C and less than or equal to 800 DEG C.Therefore, to reach
Best thin film deposition effect, the temperature difference between first inlet duct 300 and second inlet duct 400 should be greater than
Or equal to 100 DEG C and less than or equal to 600 DEG C.It needs to be more than the temperature of first inlet duct 300 in the present embodiment
Or equal to 35 DEG C and less than or equal to 600 DEG C, the temperature of second inlet duct 400 be greater than or equal to 135 DEG C and be less than or
Equal to 800 DEG C.Since the decomposition temperature of III group metal organic source is far below the decomposition temperature of V races hydride source, the present embodiment makes
The temperature for obtaining III group metal organic source and V races hydride source is respectively at respectively in preferably decomposition temperature scope, so as to
Faster reaction rate obtains the iii-v dense film of better quality.
Pedestal 100 described in the present embodiment further includes：Support base 110, one or more pending substrates 500 are arranged on institute
The upper surface of support base 110 is stated, the support base 110 is used to support the substrate 500；The heating unit 120 is arranged on institute
110 lower section of support base is stated, for being heated to the substrate 500.
The coefficient of heat conduction of the first spacer 700 is more than the coefficient of heat conduction of the second spacer 800 in the present embodiment, described
First inlet duct 300 includes the first upper surface, and first upper surface passes through first spacer 700 and cooling device
200 contacts, second inlet duct 400 include the second upper surface, and second upper surface passes through second spacer 800
It is contacted with cooling device 200, so as to which cooling device 200 is right more than cooling device 200 to the cooling effect of the first inlet duct 300
The cooling effect of second inlet duct 400 is less than the temperature of the second inlet duct 300 so as to the temperature of the first inlet duct 300.
In the present embodiment, first inlet duct 300 further includes first lower surface opposite with the first surface, institute
It states the second inlet duct 400 and further includes second lower surface opposite with the first surface.In the present embodiment, first upper table
The ratio of face and first lower surface is more than the ratio of second upper surface and second lower surface.In this way, described
One inlet duct 300 has the relatively cool area bigger than second inlet duct 400 so that first inlet duct
300 heat is easier to scatter and disappear.The cooling of first inlet duct 300 is imitated it is thus possible to further improve cooling device 200
Fruit, it is ensured that the temperature gap between first inlet duct 300 and second inlet duct 400.
In the present embodiment, the material of first spacer 700 is graphite, and the material of second spacer 800 is not
Become rusty steel, reduces the production cost of the first spacer 700 and the second spacer 800.
In the present embodiment, the thickness of first spacer 700 can be greater than or equal to 0.1mm and be less than or equal to 2mm,
Such as：0.1mm, 0.5mm, 1mm or 2mm；The thickness of second spacer 800 can also be greater than or equal to 0.1mm and be less than or
Equal to 2mm, such as：0.1mm, 0.5mm, 1mm or 2mm.The thickness of first spacer 700 and second spacer 800
Thickness may be the same or different.Preferably, the thickness of first spacer 700 is less than the thickness of the second spacer 800
Degree, so as to further such that the temperature of the first inlet duct 300 is less than the temperature of the second inlet duct 400.
In the present embodiment, the coefficient of heat conduction of first spacer 700 is more than the heat transfer system of the first inlet duct 300
Number, the coefficient of heat conduction of the second spacer 800 are more than the coefficient of heat conduction of the second inlet duct 400, first inlet duct
300 coefficient of heat conduction is more than the coefficient of heat conduction of second inlet duct 400.
When the coefficient of heat conduction of the first inlet duct 300 is more than the coefficient of heat conduction of the second inlet duct 400, described the
The material of one inlet duct 300 is different from the material of second inlet duct 400.Such as：The material of first inlet duct 300 can
Think at least one of graphite, silicon carbide, graphite and composite material of silicon carbide, silicon carbide lamination material, the second inlet duct
400 material composition is stainless steel.
In the present embodiment, the coefficient of heat conduction of first spacer 700 is more than the 400 heat transfer system of the second spacer
Number.In the present embodiment, by control the first upper surface of first inlet duct 300 and the ratio of first lower surface and
Second upper surface of second inlet duct 400 and the ratio of second lower surface, can be with further such that described first
The temperature of inlet duct 300 is less than the temperature of second inlet duct.The heat emissivity coefficient of first inlet duct 300 can
To be more than the heat emissivity coefficient of second inlet duct 400.Such as：The material of first inlet duct 300 can be stone
Ink or silicon carbide, the material composition of second inlet duct 400 include at least one of steel.Specifically, described first
The material of inlet duct 300 is graphite, and the material of second inlet duct 400 is stainless steel.Although the heat radiation system of graphite
Number is greater than the heat emissivity coefficient of stainless steel so that the speed that first inlet duct 300 adsorbs heat is more than described second
Inlet duct 400 adsorbs the speed of heat, however the coefficient of heat conduction of graphite is more than the coefficient of heat conduction of stainless steel, moreover, institute
The coefficient of heat conduction for stating the first spacer 700 is more than 400 coefficient of heat conduction of the second spacer, therefore first air inlet fills
The heat for putting 300 absorptions is easily discharged by carrying out heat exchange with the cooling device 200, so as to the cooling device 200
Cooling effect to the second inlet duct 400 is more than to the cooling effect of the first inlet duct 300 so that described first into
The temperature of device of air 300 is less than the temperature of second inlet duct 400.Since the price of graphite is than relatively low and heat-conductive characteristic
Relatively good, stainless steel physical and chemical performance is stablized, so as to reduce the first inlet duct 300 and the second inlet duct 400
Production cost, and can guarantee that 300 and second inlet duct of the first inlet duct, 400 service lifes are long.
In the present embodiment, the heat emissivity coefficient of first inlet duct 300 is less than the heat of second inlet duct 400
Radiation coefficient.It, can be with since the heat emissivity coefficient of first inlet duct 300 is less than second inlet duct 400
The temperature difference being further ensured that between the first inlet duct 300 and the second inlet duct 400.
In the present embodiment, the temperature of the cooling device 200 is greater than or equal to 10 DEG C and less than or equal to 100 DEG C, described
The temperature of heating unit 120 can be greater than or equal to 1000 DEG C and less than or equal to 1500 DEG C.Such as：The cooling device 200
Temperature for 50 DEG C, the temperature of heating unit 120 is 1200 DEG C, and when the material of first inlet duct 300 is graphite, institute
When the material for stating the second inlet duct is stainless steel, the temperature of the first inlet duct 300 can be 290 DEG C, the second inlet duct 400
Temperature can be 680 DEG C.
In the present embodiment, the CVD device further includes：The detection device being made of temperature sensor and baroceptor
(not shown)；Control device (not shown) connects each temperature sensor, baroceptor, cooling device respectively
200 and heating unit 120.
In the present embodiment, the baroceptor is one, the reaction zone is arranged on, by the reaction zone detected
Current gas pressure is sent to control device, and control device analyzes to obtain the current gas pressure of reaction zone and required gas is reacted in thin film deposition
The difference of pressure, and then control device realizes that the air pressure to reaction chamber 600 adjusts, until the current gas pressure of reaction zone is made to sink equal to film
Air pressure needed for product reaction.
In the present embodiment, the temperature sensor, can be in the first inlet duct 300, the second inlet duct to be multiple
400th, a temperature sensor is set respectively on cooling device 200 and heating unit 120, is respectively used to the first inlet duct of detection
300 Current Temperatures, the Current Temperatures of the second inlet duct 400, the Current Temperatures of cooling device 200 and heating unit 120
Current Temperatures, and the above-mentioned temperature that detection is obtained is sent to control device, control device, which passes through, analyzes the first inlet duct 300
300 required temperature of Current Temperatures and the first inlet duct between temperature difference, the second inlet duct 400 Current Temperatures with
Temperature difference between second inlet duct, 400 required temperature adjusts the temperature of the temperature of cooling device 200 or heating unit 120
Degree, until the Current Temperatures of the first inlet duct 300 is made to be greater than or equal to 35 DEG C and less than or equal to 600 DEG C, the second air inlet dress
The Current Temperatures for putting 400 are greater than or equal to 135 DEG C and less than or equal to 800 DEG C, and cause the temperature of first inlet duct 300
Degree is lower than 400 temperature of second inlet duct, more than or equal to 100 DEG C and less than or equal to 600 DEG C；So as to more accurate
Ground controls the process of thin film deposition.
In the MOCVD devices described in the present embodiment, the material of the reaction chamber 600 is stainless steel.
In the present embodiment, the material of the support base 110 is graphite.It, can be in the support base 110 in the present embodiment
Surface sets one layer of silicon carbide (SiC) layer, so that support base 110 has high temperature resistant, anti-oxidant, the high and acidproof alkali salt of purity
And the characteristics such as organic reagent corrosion, make its physical and chemical performance more stable.
In the present embodiment, the heating unit 120 is specifically as follows radio frequency heating unit, infrared radiation heating unit or electricity
Heating unit etc. is hindered, different selections can be carried out according to the size and material of reaction chamber 600.In RF heating, stone
The support base 110 of ink by radio-frequency coil by inducing coupling heating, in large-scale reaction chamber 600 often adopt by this heat form
With, but usually system is excessively complicated.In order to avoid the complexity of system, in slightly smaller reaction chamber 600, generally use is infrared
Radiant heating pattern, the thermal energy that halogen tungsten lamp generates are converted into infrared energy, and the support base 110 of graphite absorbs this infrared spoke
It penetrates and can and be converted back into thermal energy.In resistance heating manner, by the fever of resistance wire, and then realize to support base 110
Heating.
In the present embodiment, the heating unit 120 can also be integrated in the support base 110, for this field
Technical staff is well known, therefore details are not described herein.
In the present embodiment, the cooling device 200 has cooling duct, to be passed through cooling gas or cooling liquid.
Specifically, cooling by water may be used in the cooling device 200, can also use air-cooled cooling, corresponding concrete structure pair
It is well known in those skilled in the art, therefore details are not described herein.By controlling the temperature of cooling device 200 in the present embodiment
Degree can make two inlet ducts have different temperature change values, to adapt to different spray assemblies temperature requirements.In addition,
Cooling device 200 can also cause spray assemblies to be in relatively low temperature, extend the service life of spray assemblies.
In the present embodiment, the CVD device can also include：Rotary drive unit (not shown), the rotation are driven
Moving cell drives the pedestal 100 or spray assemblies to be rotated in the deposition process of the chemical vapor deposition unit, from
And cause thin film deposition evenly.In the present embodiment, the rotary drive unit drives the pedestal 100 to rotate.
The first inlet duct 300 and the second inlet duct 400 are combined into a disc in the present embodiment；The disc
Multiple fan sections are divided into, the multiple fan section includes the first fan section and the second fan section of alternate intervals setting.Institute
The first fan section that the first inlet duct 300 is arranged on the disc is stated, second inlet duct 400 is arranged on the circle
Second fan section of disk body.
In the present embodiment, first inlet duct 300 further includes several first gas with several first stomatas and expands
Throwaway member 310, the spray assemblies further include the first air inlet pipe (not shown)；Each first gas diffusion unit
310 form first fan section of the disc；First air inlet pipe is through the cooling device 200 and and the first gas
Body diffusion unit 310 connects, and the first gas enters first gas diffusion unit 310, and expand from gas from the first air inlet pipe
First stomata of throwaway member 310 enters reaction zone.It is set between each first gas diffusion unit 310 and cooling device 200
First spacer 700 there are one putting, the shape size of first spacer 700 and the shape of first gas diffusion unit 310
Size is identical.The first gas diffusion unit 310 can be tubulose, plate or sheet.In the present embodiment, it is preferable that
The first gas diffusion unit 310 is gas diffusion tube.
In the present embodiment, second inlet duct 400 includes several second gas with several second stomatas and spreads
Unit 410；The spray assemblies further include the second air inlet pipe (not shown), each second gas diffusion unit 410
Form second fan section of the disc；Second air inlet pipe is through the cooling device 200 and and second gas
Diffusion unit 410 connects, and the second gas enters second gas diffusion unit 410 from the second air inlet pipe, and from second gas
Second stomata of diffusion unit 410 enters reaction zone.Between each second gas diffusion unit 410 and cooling device 200
There are one the second spacer 800, the shape size of second spacer 800 and the shapes of second gas diffusion unit 410 for setting
Shape size is identical.The second gas diffusion unit 410 can be tubulose, plate or sheet.In the present embodiment, preferably
Ground, the second gas diffusion unit 410 are gas diffusion tube.
In the present embodiment, the first gas diffusion unit 310 of first inlet duct 300 and second inlet duct
400 second gas diffusion unit 410 can also be the spaced circular ring shape diffuser being arranged, and should not limit this hair herein
Bright protection domain.
Temperature controlled method is carried out to spray assemblies using above-mentioned chemical deposition equipment, this method includes：
Step 1：Carry out chemical deposition reaction；
Step 2：Measure the gas shower component temperature；
Step 3：Measure the reaction chamber substrate temperature；
Step 4：The first carrier gas and second is provided according to the gas shower component temperature of measurement and the substrate temperature
The mixed carrier gas of carrier gas.
The above method further includes, and improves the proportioning of first carrier gas and reduces the gas shower component temperature.Or it reduces
The proportioning of first carrier gas improves the gas shower component temperature.
In the present embodiment, first carrier gas is preferably hydrogen, and second carrier gas is preferably nitrogen.But the first carrier gas
These gases are not limited to the second carrier gas, but can be the gas that above-mentioned adjustment gas shower component temperature arbitrarily can be achieved
Type.
Fig. 4 shows the front and rear spray assemblies temperature change schematic diagram of mixed gases matching adjustment.For the ease of prominent aobvious
Showing spray assemblies temperature variations, and it is compared with heter temperature variation, the horizontal axis that Fig. 4 is shown is time shaft,
It is heter temperature coordinate in the ordinate close to time shaft starting point, is spray assemblies temperature in the ordinate far from time shaft starting point
Spend coordinate or spray head temperature coordinate.The temperature curve 42 of heater and mixed gases matching adjustment are not related, are independent
Controlled quentity controlled variable.As shown in the figure, heter temperature at -500 seconds or so 0 second its temperature rise period in order to control；At -3300 seconds or so 500 seconds
Stationary operational phase is heated to for heater, which can be applied to the process stage；It was heater at -4000 seconds 3300 seconds
Temperature-fall period.And spray assemblies temperature curve 41 is affected by mixed gases matching adjustment.Continue to join shown in Fig. 4, from about
750 seconds to 1200 seconds, be temperature raised stage of the spray assemblies temperature with heater.1200 to 2700 seconds, be spray
Component temperature stabilization sub stage with the temperature stabilization of heater.At 2700 seconds, mixed gases matching is changed, specifically
Ground, this experiment is under MOCVD deposition process conditions, when the mixed proportion of hydrogen and nitrogen only being become 0: 100 from 100: 0, spray
Leaching component temperature drastically increases.2700 seconds to 2900 seconds, increased after spray assemblies temperature changes with gas mixing ratio.2900
To 3500 seconds, to be spray assemblies temperature stable with gas mixing ratio and stable section.3500 to 4000 seconds, be spray assemblies temperature
The stage for reducing and reducing with the temperature of heater.It sinks in addition, should be appreciated that as this field general artisan in MOCVD
Under long-pending different technology conditions, the actual temperature that may result in spray assemblies heating is of different sizes, but no matter in which kind of technique
Under the conditions of, above-mentioned spray assemblies temperature can be caused when the mixed proportion of above-mentioned hydrogen and nitrogen is become 0: 100 from 100: 0
More rapidly change situation.Therefore, the chemical meteorology deposition device described in the present embodiment is realized to spray assemblies certainly
The control and adjusting of body temperature carry out accurate temperature control it is achieved thereby that designing according to expectation to differential responses gas.
Embodiment two
Fig. 5 is the structure diagram of CVD device of the embodiment of the present invention, and Fig. 5 is that the structure that BB ' directions obtain along Fig. 5 is shown
It is intended to.Referring to shown in Fig. 5 and Fig. 6, the difference between this embodiment and the first embodiment lies in：In first inlet duct 300
Second gas diffusion unit 410 in one gas diffusion unit 310 and second inlet duct 400 is rectangle, and the
One gas diffusion unit 310 and second gas diffusion unit 410 are arranged alternately successively, and the heating unit 120 is in heating process
In, first inlet duct 300 has different temperature from second inlet duct 400.
The first inlet duct 300 and the second inlet duct 400 are combined together in the present embodiment, so that entire spray
Component it is relatively simple for structure.Number, size of the first gas diffusion unit 310 and second gas diffusion unit 410 etc.
There is no limit, and its number is more, first gas and second gas mixing are more uniform.
It should be noted that in other embodiments of the invention, the first outlet face of the first inlet duct 300 and pedestal
The first vertical range between 100 supporting surface can be more than branch of the second outlet face with pedestal 100 of the second inlet duct 400
The second vertical range between support face.
In addition, can also have lateral separation between first inlet duct 300 and second inlet duct 400,
So as to reduce interfering with each other for temperature between two inlet ducts so that simpler accurate to the control of two inlet duct temperature
Really, it is preferred that filled with heat-insulated substance to be further reduced the mutual of temperature between two inlet ducts in the lateral separation
Interference.
Spray assemblies in above example include two inlet ducts, cooling device respectively with each inlet duct layer
Folded setting, two inlet ducts are arranged side by side, by the way that a heat is set to pass respectively between each inlet duct and cooling device
The different spacer of coefficient is led, and so that the temperature of two inlet ducts is different.It should be noted that spray assemblies can also wrap
The inlet duct of three and three or more is included, similarly, by being set between part or all of inlet duct and cooling device
The different spacer of the coefficient of heat conduction, cooling device are stacked with part or all of inlet duct, part or all of air inlet dress
Put arranged side by side, the temperature that can equally cause part or all of inlet duct is different.
Although the present invention has been disclosed in the preferred embodiments as above, present invention is not limited to this.Any art technology
Personnel without departing from the spirit and scope of the present invention, can make various changes or modifications, therefore protection scope of the present invention should
When being subject to claim limited range.
Claims (9)
1. a kind of chemical vapor deposition unit, which is characterized in that including：
Reaction chamber, to handle the substrate being positioned in the reaction chamber；
Pedestal is set to inside the reaction chamber, and the pedestal is used to support one or more pending substrates；
Heating unit, for heating the pedestal and the substrate, the heating unit has control loop；Gas shower group
Part is set to the top of the reaction chamber, and the gas shower component includes the first inlet duct and the second inlet duct, described
Reaction zone is formed between gas shower component and the pedestal；The gas shower component is by reaction gas distribution to the reaction
In area；
Cover, for closing the reaction chamber, the cover includes a cooling device, and the gas shower component is located at the lid
Between body and the pedestal；
Slit is formed between the cover and the gas shower component；
First temperature measuring equipment, for measuring the temperature of the gas shower component；
Temperature control feeder, to supplied in the slit, the mixed carrier gas includes the first carrier gas and the by mixed carrier gas
Two carrier gas, the temperature control feeder according to the temperature of the gas shower component, accordingly adjust first carrier gas with it is described
The proportioning of second carrier gas；
First carrier gas includes at least one of hydrogen or helium, and second carrier gas is included in nitrogen or argon gas at least
It is a kind of；
The ratio of the first carrier gas is higher in the mixed carrier gas, and the temperature measured by first temperature measuring equipment is lower.
2. chemical vapor deposition unit according to claim 1, which is characterized in that the temperature control feeder is according to
The mixed carrier gas described in the supply of gas shower component temperature that first temperature measuring equipment measures.
3. chemical vapor deposition unit according to claim 1, which is characterized in that the reaction chamber also has one for surveying
Measure the second temperature measuring device of the substrate temperature.
4. chemical vapor deposition unit according to claim 3, which is characterized in that the temperature control feeder is according to
The substrate temperature that second temperature measuring device measures supplies the mixed carrier gas.
5. chemical vapor deposition unit according to claim 3, which is characterized in that the first temperature measuring equipment temperature
The thermoelectricity that sensor includes attachment with second temperature measuring device occasionally uses the non-contact temperature based on pyrometry to survey
Amount tool.
6. chemical vapor deposition unit according to claim 1, which is characterized in that the width of the slit is less than 5mm.
7. chemical vapor deposition unit according to claim 1 carries out temperature controlled method, feature to spray assemblies
It is, includes the following steps：
Step 1：Carry out chemical deposition reaction；
Step 2：Measure the gas shower component temperature；
Step 3：Measure the reaction chamber substrate temperature；
Step 4：The first carrier gas and the second carrier gas are provided according to the gas shower component temperature of measurement and the substrate temperature
Mixed carrier gas.
8. it the method according to the description of claim 7 is characterized in that further includes：Improving the proportioning of first carrier gas reduces institute
State gas shower component temperature.
9. it the method according to the description of claim 7 is characterized in that further includes：The proportioning for reducing by first carrier gas improves institute
State gas shower component temperature.
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| CN105021288A (en) * | 2015-08-05 | 2015-11-04 | 浙江大学 | Device for temperature measurement of substrate surface in hot filament chemical vapor deposition |
| CN108728828A (en) * | 2017-04-20 | 2018-11-02 | 中微半导体设备(上海)有限公司 | CVD equipment and its temprature control method and heater |
| CN113699509B (en) * | 2021-10-27 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | Semiconductor growth equipment and working method thereof |
| CN114753001B (en) * | 2022-05-05 | 2023-07-04 | 季华实验室 | Epitaxial deposition reaction chamber, deposition system and deposition method |
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| US6467490B1 (en) * | 1998-08-31 | 2002-10-22 | Texas Instruments Incorporated | Process for using a high nitrogen concentration plasma for fluorine removal from a reactor |
| CN1962511A (en) * | 2006-11-30 | 2007-05-16 | 浙江大学 | Process for preparing porous TiO2 film with high photocatalytic activity |
| CN102877040A (en) * | 2012-09-06 | 2013-01-16 | 绿种子科技(潍坊)有限公司 | Air-supply device and chemical vapor deposition device using air-supply device |
| CN103014669A (en) * | 2011-09-23 | 2013-04-03 | 理想能源设备(上海)有限公司 | Chemical vapor deposition (CVD) device |
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| US6467490B1 (en) * | 1998-08-31 | 2002-10-22 | Texas Instruments Incorporated | Process for using a high nitrogen concentration plasma for fluorine removal from a reactor |
| CN1962511A (en) * | 2006-11-30 | 2007-05-16 | 浙江大学 | Process for preparing porous TiO2 film with high photocatalytic activity |
| CN103014669A (en) * | 2011-09-23 | 2013-04-03 | 理想能源设备(上海)有限公司 | Chemical vapor deposition (CVD) device |
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