CN105648425A - Chemical vapor deposition device and temperature control method thereof - Google Patents
Chemical vapor deposition device and temperature control method thereof Download PDFInfo
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- CN105648425A CN105648425A CN201410668535.6A CN201410668535A CN105648425A CN 105648425 A CN105648425 A CN 105648425A CN 201410668535 A CN201410668535 A CN 201410668535A CN 105648425 A CN105648425 A CN 105648425A
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Abstract
The invention discloses a chemical vapor deposition device. The chemical vapor deposition device comprises a reaction cavity; a base arranged at the bottom of the reaction cavity for supporting one or more substrates to be treated; a heating unit for heating the base and the substrates; a gas spraying component arranged at the top of the reaction cavity and including a first intake device and a second intake device, wherein a reaction area is formed between the gas spraying component and the base; a cover body arranged on the gas spraying component for closing the reaction cavity and including a cooling device, wherein a slot is formed between the cover body and the gas spraying component; a first temperature measuring device for measuring the temperature of the gas spraying component; and a temperature control gas supply device for matching two gas A and B and supplying the matched gas to the slot according to the measured temperature of the gas spraying component. The chemical vapor deposition device realizes precise temperature control of the gas spraying component through adjusting the gas ratio between the gas spraying component and a cooling part of the reaction cavity.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly to a kind of chemical vapor deposition unit and Temp. control method thereof.
Background technology
Chemical vapour deposition (CVD) (Chemicalvapordeposition, it is called for short CVD) it is that reacting substance issues biochemical reaction at gaseous condition, generate solid matter and be deposited on the solid matrix surface of heating, and then the Technology of prepared solid material, it is achieved by chemical vapor deposition unit. Specifically, reacting gas is passed in reative cell by CVD device by air intake installation, and controls the reaction conditions such as the pressure of reative cell, temperature so that reacting gas reacts, thus completing deposition process step. In order to deposit required thin film, it is generally required to pass into multiple different reacting gas in reative cell, and also need in reative cell, pass into carrier gas or purge other nonreactive gas such as gas, therefore need to arrange multiple air intake installation in CVD device. Below with metal organic chemical vapor deposition (MetalOrganicChemicalVaporDeposition, MOCVD) device for example, introduce prior art and include the CVD device of multiple air intake installation.
MOCVD is mainly used in the iii-v such as gallium nitride, GaAs, indium phosphide, zinc oxide, the preparation of the thin layer monocrystalline functional structure material of II-VI group compound and alloy, along with the range of application of above-mentioned functions structural material constantly expands, one of MOCVD device important device having become as chemical vapor deposition unit. MOCVD is generally using II race or III metal organic source and VI race or V race hydride source etc. as reacting gas, with hydrogen or nitrogen as carrier gas, on substrate, vapor phase epitaxial growth is carried out, thus growing the thin layer monocrystal material of various II-VI compound semiconductor, Group III-V compound semiconductor and their multivariate solid solution in pyrolysis mode. Owing to II race or III metal organic source are different with the transmission conditions of VI race or V race hydride source, it is therefore desirable to by different air intake installations respectively by II race or III metal organic source and VI race or the hydride source transmission of V race to surface.
MOCVD device of the prior art generally comprises: reaction chamber; It is arranged at the pedestal in a rotating shaft bottom reaction chamber, is used for supporting one or more pending substrate; Heating unit, is used for heating described pedestal and substrate, and described heating unit has control loop; It is positioned at the spray assemblies at described reaction chamber top, including gas distribution member and air inlet pipeline, between described gas shower assembly and described pedestal, forms reaction zone; Described gas shower assembly is respectively by II race or III metal organic source and VI race or the hydride source transmission distribution of V race to described reaction zone; It is arranged on gas shower assembly the lid for capping chamber.
In prior art, III metal organic source and V race hydride source gas are heated to same temperature by MOCVD device, the poor quality of the thin film of end reaction deposition, and film deposition rate is low, production cost is high. In other CVD device except MOCVD device, the situation that heating-up temperature needed for there is also differential responses gas is different, when being heated to same temperature by these differential responses gases, similarly, the film quality of end reaction deposition is very poor, and film deposition rate is low, production cost is high. Similarly, in other CVD device, there is also differential responses gas needs the situation of different temperatures.
Therefore, just occur in that the CVD device comprising cooling body, controlled and regulate the temperature of differential responses gas by cooling body respectively, thus providing different temperature for different reacting gas, it is achieved best reaction condition.
It is CN102877040 Chinese patent referring to publication number, it discloses a kind of feeder and apply the chemical vapor deposition unit of this device, including: a load plate, carry at least one substrate; And a feeder, a reaction compartment is formed between this load plate and this feeder, after this feeder provides multiple reactants to carry out a reaction to this reaction compartment, produce at least one product to this at least one substrate, this feeder includes: multiple reactant pipelines, carries those reactants respectively; And multiple temperature control pipeline, those temperature control pipelines and those reactant pipeline contact, to control the temperature of those reactants. Also including a heating unit, it is provided that this reaction compartment is carried out the temperature of this reaction, this load plate is between this heating unit and this feeder. Also including: a lid, be positioned at above this feeder, those reactants are delivered to those reactant pipelines by this lid portion outside by this lid. Those temperature control pipelines each also include at least one temperature sensor. Those reactant pipelines each also include at least one temperature sensor. Those temperature control pipelines each lay respectively at multiple region, and according to zones of different situation, those temperature control pipeline correspondences each adjust a flow speed or a fluid temperature (F.T.) of an internal fluid.
But chemical deposition device is in course of reaction, heating and the reacting gas conduction to heat due to heating unit, the temperature that can cause spray assemblies itself rises, thus the rising of spray assemblies own temperature reacts on again reacting gas itself, cause being difficult to cooling body design according to expectation differential responses gas carries out accurate temperature control.
Therefore, how spray assemblies self is realized temperature control and adjustment, thus realizing designing according to expectation differential responses gas carries out the technical problem that accurate temperature control just becomes urgently to be resolved hurrily.
Summary of the invention
It is an object of the invention to provide a kind of chemical vapor deposition unit, spray assemblies self is realized accurate temperature and controls and regulate.
For solving the problems referred to above, the invention provides a kind of chemical vapor deposition unit, including:
Reaction chamber, in order to process the substrate being positioned in described reaction chamber;
Pedestal, is arranged at inside described reaction chamber, and described pedestal is for supporting one or more pending substrate;
Heating unit, is used for heating described pedestal and described substrate, and described heating unit has control loop;
Gas shower assembly, is arranged at the top of described reaction chamber, and described gas shower assembly includes the first air intake installation and the second air intake installation, forms reaction zone between described gas shower assembly and described pedestal; Described gas shower assembly is by reaction gas distribution to described reaction zone;
Lid, is used for closing described reaction chamber, and described lid comprises a chiller, and described chiller is arranged on described spray assemblies and deviates from the side of described pedestal; Described gas shower assembly is between described lid and described pedestal;
It is formed with slit between described lid and described gas shower assembly;
First temperature measuring equipment, for measuring the temperature of described gas shower assembly;
Temperature control feeder, in order to by mixed carrier gas supply to described slit, described mixed carrier gas includes the first carrier gas and the second carrier gas, the described temperature control feeder temperature according to described gas shower assembly, the corresponding proportioning adjusting described first carrier gas and described second carrier gas.
Preferably, between described first air intake installation and described chiller, it is provided with the first distance piece, between described second air intake installation and described chiller, is provided with the second distance piece.
Preferably, described chiller is arranged with described first air intake installation stacking, and described chiller is arranged with described second air intake installation stacking, and described first air intake installation and described second air intake installation are arranged side by side.
Preferably, the coefficient of heat conduction of described first distance piece is more than the coefficient of heat conduction of described second distance piece.
Preferably, described first air intake installation carries out heat exchange by described first distance piece and described chiller, and described second air intake installation carries out heat exchange by described second distance piece.
Preferably, described first carrier gas includes at least one in hydrogen or helium, and described second carrier gas includes at least one in nitrogen or argon. In described mixed carrier gas, the ratio of the first carrier gas is more high, and the temperature measured by described first temperature measuring equipment is more low.
Further, the gas shower assembly temperature that described temperature control feeder is measured according to described first temperature measuring equipment supplies described mixed carrier gas.
Further, described reaction chamber also has one for measuring the second temperature measuring equipment of described substrate temperature. The substrate temperature that described temperature control feeder is measured according to described second temperature measuring equipment supplies described mixed carrier gas.
Preferably, the thermoelectricity that described first temperature measuring equipment temperature sensor and the second temperature measuring equipment include being attached occasionally uses based at least one in the non-contact type temperature measurement instrument of infra-red radiation, fluorescence or pyrometry.
Preferably, described slit width is less than 5mm.
Preferably, described CVD device can be one or more in MOCVD device, LPCVD device, PCVD device or ALD device.
Preferably, described III metal organic source includes one or more in Ga (CH3) 3, In (CH3) 3, A1 (CH3) 3, Ga (C2H5) 3 gas, and its decomposition temperature is more than or equal to 35 DEG C and less than or equal to 600 DEG C.
Preferably, described V race hydride source includes one or more in NH3, PH3, AsH3 gas, and its decomposition temperature is more than or equal to 135 DEG C and less than or equal to 800 DEG C. Therefore, for reaching the thin film deposition effect of the best, the temperature difference between described first air intake installation 300 and described second air intake installation 400 should be greater than or equal to 100 DEG C and less than or equal to 600 DEG C.
Preferably, described first air intake installation includes the first upper surface, described first upper surface is contacted with chiller by described first distance piece, and described second air intake installation includes the second upper surface, and described second upper surface is contacted with chiller by described second distance piece.
Preferably, described first air intake installation also includes first lower surface relative with described first surface, and described second air intake installation also includes second lower surface relative with described first surface; Preferably, the ratio of described first upper surface and described first lower surface is more than the ratio of described second upper surface Yu described second lower surface.
Preferably, the material of described first distance piece can be graphite, carborundum, it is also possible to being graphite and composite material of silicon carbide or silicon carbide lamination material, the material composition of described second distance piece can include steel. Preferably, the material of described first distance piece is graphite, and the material of described second distance piece is rustless steel.
Preferably, the thickness of described first distance piece can more than or equal to 0.1mm and less than or equal to 2mm, such as 0.1mm, 0.5mm, 1mm or 2mm; The thickness of described second distance piece can also more than or equal to 0.1mm and less than or equal to 2mm, such as 0.1mm, 0.5mm, 1mm or 2mm.
The thickness of the thickness of described first distance piece and described second distance piece can be identical, it is also possible to different. Preferably, the thickness of described first distance piece is less than the thickness of the second distance piece, such that it is able to further such that the temperature of the first air intake installation is less than the temperature of the second air intake installation.
Preferably, the coefficient of heat conduction of described first distance piece can more than or equal to the coefficient of heat conduction of the first air intake installation, the coefficient of heat conduction of the second distance piece can also more than or equal to the coefficient of heat conduction of the second air intake installation, and the coefficient of heat conduction of described first air intake installation can more than or equal to the coefficient of heat conduction of described second air intake installation.
Preferably, when the coefficient of heat conduction of the first air intake installation is more than the coefficient of heat conduction of the second air intake installation, the material of described first air intake installation is different from the material of described second air intake installation. As: the material of the first air intake installation can be graphite or carborundum, and the material of described first air intake installation can also is that graphite and composite material of silicon carbide or silicon carbide lamination material, and the material composition of the second air intake installation can include steel, it is preferred to rustless steel.
Preferably, when the coefficient of heat conduction of the first air intake installation is equal to the coefficient of heat conduction of the second air intake installation, the material of the material of described first air intake installation and described second air intake installation can be identical. As: the material of the first air intake installation and the second air intake installation all includes one or more in graphite, carborundum, steel.
Utilizing above-mentioned chemical deposition equipment that spray assemblies is carried out temperature controlled method, the method includes:
Step one: carry out chemical deposition reaction;
Step 2: measure described gas shower assembly temperature;
Step 3: measure described reaction chamber substrate temperature;
Step 4: the mixed carrier gas of the first carrier gas and the second carrier gas is provided according to the described gas shower assembly temperature measured and described substrate temperature.
Preferably, said method also includes, and the proportioning improving described first carrier gas reduces described gas shower assembly temperature, or the proportioning reducing described first carrier gas improves described gas shower assembly temperature.
Described first carrier gas is preferably hydrogen, and described second carrier gas is preferably nitrogen. But the first carrier gas and the second carrier gas are not limited to These gases, but can be the gaseous species that arbitrarily can realize above-mentioned adjustment gas shower assembly temperature.
Compared with prior art, the beneficial effects of the present invention is:
The chemical vapor deposition unit of the present invention is under the constant premise of other conditions, by reducing the proportioning of hydrogen, improve the proportioning of nitrogen, concrete, by the mixed proportion of hydrogen and nitrogen from 100: 0 become 0: 100 time, the temperature of spray assemblies steeply rises by a relatively low equilibrium temperature, and quickly reaches a new equilibrium temperature. Therefore, chemical meteorology deposition device of the present invention achieves the control to spray assemblies own temperature and adjustment, it is achieved thereby that design according to expectation, differential responses gas carries out accurate temperature control.
In addition, the heat that the first heretofore described air intake installation absorbs discharges easily by carrying out heat exchange with described chiller, thus described chiller to the cooling effect of the first air intake installation more than the cooling effect to the second air intake installation so that the temperature of described first air intake installation is lower than the temperature of described second air intake installation. in addition, pass through the ratio controlling the first upper surface of described first air intake installation and the ratio of described first lower surface be more than or equal to the second upper surface of described second air intake installation Yu described second lower surface further, can further such that the temperature of described first air intake installation be lower than the temperature of described second air intake installation, at high temperature first there is after predecomposition gas reaction high with decomposition temperature again thus avoiding the low gas of decomposition temperature and produce a large amount of solid particle, reduce the probability that the solid particle being deposited on spray assemblies departs from thin film, it also avoid the high gas of decomposition temperature to cannot be carried out at low temperatures decomposing, improve the speed of thin film deposition, improve the quality of thin film, save raw material, reduce and clean and production cost.
Further, it is provided with the first distance piece between heretofore described first air intake installation and described chiller, it is provided with the second distance piece between described second air intake installation and described chiller, described chiller is arranged with described first air intake installation stacking, described chiller is arranged with described second air intake installation stacking, described first air intake installation and described second air intake installation are arranged side by side, the coefficient of heat conduction of described first distance piece is more than the coefficient of heat conduction of described second distance piece, described first air intake installation carries out heat exchange by described first distance piece and described chiller, described second air intake installation carries out heat exchange by described second distance piece, owing to the coefficient of heat conduction of described first distance piece is more than the coefficient of heat conduction of described second distance piece, therefore between described first air intake installation and described chiller, between more described second air intake installation of exchange rate and described chiller, exchange rate wants fast, described heating unit is in heating process, due to described first air intake installation, exchange rate between second air intake installation from described chiller is different, therefore the first air intake installation will have different temperature from described second air intake installation, avoid the low gas of decomposition temperature gas reaction high with decomposition temperature again at high temperature first occurs after predecomposition and produces a large amount of solid particle, reduce the probability that the solid particle being deposited on spray assemblies departs from thin film, it also avoid the high gas of decomposition temperature to cannot be carried out at low temperatures decomposing, improve the speed of thin film deposition, improve the quality of thin film, save raw material, reduce and clean and production cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the chemical deposition device in prior art with chiller;
Fig. 2 is the structural representation of the CVD device of the embodiment of the present invention one;
Fig. 3 is the structural representation that AA ' direction obtains along Fig. 2;
Fig. 4 is the spray assemblies temperature variation before and after mixed gases matching adjusts;
Fig. 5 is the structural representation of the CVD device of the embodiment of the present invention two;
Fig. 6 is the structural representation that BB ' direction obtains along Fig. 4.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Elaborating a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from alternate manner described here to be implemented, therefore the present invention is not by the restriction of following public specific embodiment.
Embodiment one
Fig. 2 is the structural representation of the present embodiment CVD device, and Fig. 3 is the structural representation that AA ' direction obtains along Fig. 2. As shown in Figures 2 and 3, the CVD device described in the present embodiment includes:
Reaction chamber 600, in order to process the substrate being positioned in described reaction chamber 600; Being arranged at the pedestal 100 within described reaction chamber 600, described pedestal 100 is for supporting one or more pending substrate; For heating the heating unit 120 of described pedestal and substrate, described heating unit 120 has control loop; It is arranged at the gas shower assembly at described reaction chamber 600 top, described gas shower assembly includes the first air intake installation 300 and the second air intake installation 400, forming reaction zone between described gas shower assembly and described pedestal 100, described gas shower assembly is by reaction gas distribution to described reaction zone; For closing the lid of described reaction chamber, described lid comprises a chiller 200, and described gas shower assembly, between described lid and described pedestal, is formed with slit between described lid and described gas shower assembly, described slit width is less than 5mm; For measuring the first temperature measuring equipment of the temperature of described gas shower assembly; In order to by the temperature control feeder in mixed carrier gas supply to described slit, described mixed carrier gas includes the first carrier gas and the second carrier gas, the described temperature control feeder temperature according to described gas shower assembly, the corresponding proportioning adjusting described first carrier gas and described second carrier gas.
The present embodiment arranges the first distance piece 700 between described first air intake installation 300 and described chiller 200, between described second air intake installation 400 and described chiller 200, the second distance piece 800 is set, described chiller 200 is arranged with described first air intake installation 300 stacking, described chiller 200 is arranged with described second air intake installation 400 stacking, described first air intake installation 300 is arranged side by side with described second air intake installation 400, the coefficient of heat conduction of described first distance piece 700 is more than the coefficient of heat conduction of described second distance piece 800, described first air intake installation 300 carries out heat exchange by described first distance piece 700 with described chiller 200, described second air intake installation 400 carries out heat exchange by described second distance piece 800, owing to the coefficient of heat conduction of described first distance piece 700 is more than the coefficient of heat conduction of described second distance piece 800, therefore between described first air intake installation 300 and described chiller 200, between more described second air intake installation 400 of exchange rate and described chiller 200, exchange rate wants fast, at described heating unit in heating process, due to described first air intake installation 300, exchange rate between described second air intake installation 400 and described chiller 200 different, therefore the first air intake installation 300 will have different temperature from described second air intake installation 400, avoid the low gas of decomposition temperature gas reaction high with decomposition temperature again at high temperature first occurs after predecomposition and produces a large amount of solid particle, reduce the probability that the solid particle being deposited on spray assemblies departs from thin film, it also avoid the high gas of decomposition temperature to cannot be carried out at low temperatures decomposing, improve the speed of thin film deposition, improve the quality of thin film, save raw material, reduce and clean and production cost.
In the present embodiment, described first gas includes one or more in reacting precursor, carrier gas, purging gas, and described second gas also includes one or more in reacting precursor, carrier gas, purging gas.
In the present embodiment, described CVD device is the one in MOCVD device, LPCVD device, PCVD device or ALD device. below for described CVD device for MOCVD device, namely described first air intake installation 300 is used for transmitting III metal organic source, it is that example illustrates that described second air intake installation 400 is used for transmitting V race hydride source, owing to MOCVD growth technique requires high, typically require high temperature to control, and need accurately to control the proportioning of reacting gas, and the decomposition temperature of the decomposition temperature of III metal organic source and V race hydride source has larger difference, therefore when controlling to make III metal organic source different with the temperature of V race hydride source, just the generation of side reaction can be reduced, improve quality and the sedimentation rate of Group III-V compound semiconductor, prevent III metal organic source and the waste of V race hydride source. now the temperature of described first air intake installation 300 is less than the temperature of described second air intake installation 400, but should not limit the scope of the invention with this. it should be noted that while the first air intake installation 300 transmits III metal organic source and the second air intake installation 400 transmits V race hydride source, the first air intake installation 300 and the second air intake installation 400 can also transmit carrier gas simultaneously, as: hydrogen or nitrogen.
Described III metal organic source includes Ga (CH3)3��In(CH3)3��Al(CH3)3��Ga(C2H5)3, one or more in gas, its decomposition temperature is more than or equal to 35 DEG C and less than or equal to 600 DEG C. Described V race hydride source includes NH3��PH3��AsH3One or more in gas, its decomposition temperature is more than or equal to 135 DEG C and less than or equal to 800 DEG C. Therefore, for reaching the thin film deposition effect of the best, the temperature difference between described first air intake installation 300 and described second air intake installation 400 should be greater than or equal to 100 DEG C and less than or equal to 600 DEG C. Needing the temperature making described first air intake installation 300 more than or equal to 35 DEG C and less than or equal to 600 DEG C in the present embodiment, the temperature of described second air intake installation 400 is more than or equal to 135 DEG C and less than or equal to 800 DEG C. Owing to the decomposition temperature of III metal organic source is far below the decomposition temperature of V race hydride source, the present embodiment makes the temperature of III metal organic source and V race hydride source be respectively within the scope of respective preferably decomposition temperature, such that it is able to reaction rate obtains the iii-v dense film of better quality faster.
Pedestal 100 described in the present embodiment also includes: supporting seat 110, and one or more pending substrates 500 are arranged on the upper surface of described supporting seat 110, and described supporting seat 110 is used for supporting described substrate 500; Described heating unit 120 is arranged on below described supporting seat 110, for described substrate 500 is heated.
In the present embodiment, the coefficient of heat conduction of the first distance piece 700 is more than the coefficient of heat conduction of the second distance piece 800, described first air intake installation 300 includes the first upper surface, described first upper surface is contacted with chiller 200 by described first distance piece 700, described second air intake installation 400 includes the second upper surface, described second upper surface is contacted with chiller 200 by described second distance piece 800, thus chiller 200 to the cooling effect of the first air intake installation 300 more than the chiller 200 cooling effect to the second air intake installation 400, thus the temperature of the first air intake installation 300 is lower than the temperature of the second air intake installation 300.
In the present embodiment, described first air intake installation 300 also includes first lower surface relative with described first surface, and described second air intake installation 400 also includes second lower surface relative with described first surface. In the present embodiment, the ratio of described first upper surface and described first lower surface is more than the ratio of described second upper surface Yu described second lower surface. So, described first air intake installation 300 has the relatively cool area bigger than described second air intake installation 400 so that the heat of described first air intake installation 300 is easier to scatter and disappear. It is thus possible to improve the chiller 200 cooling effect to the first air intake installation 300 further, it is ensured that the temperature gap between described first air intake installation 300 and described second air intake installation 400.
In the present embodiment, the material of described first distance piece 700 is graphite, and the material of described second distance piece 800 is rustless steel, reduces the production cost of the first distance piece 700 and the second distance piece 800.
In the present embodiment, the thickness of described first distance piece 700 can more than or equal to 0.1mm and less than or equal to 2mm, such as 0.1mm, 0.5mm, 1mm or 2mm; The thickness of described second distance piece 800 can also more than or equal to 0.1mm and less than or equal to 2mm, such as 0.1mm, 0.5mm, 1mm or 2mm. The thickness of the thickness of described first distance piece 700 and described second distance piece 800 can be identical, it is also possible to different. Preferably, the thickness of described first distance piece 700 is less than the thickness of the second distance piece 800, such that it is able to further such that the temperature of the first air intake installation 300 is less than the temperature of the second air intake installation 400.
In the present embodiment, the coefficient of heat conduction of described first distance piece 700 is more than the coefficient of heat conduction of the first air intake installation 300, the coefficient of heat conduction of the second distance piece 800 is more than the coefficient of heat conduction of the second air intake installation 400, and the coefficient of heat conduction of described first air intake installation 300 is more than the coefficient of heat conduction of described second air intake installation 400.
When the coefficient of heat conduction of the first air intake installation 300 is more than the coefficient of heat conduction of the second air intake installation 400, the material of described first air intake installation 300 is different from the material of described second air intake installation 400. As: the material of the first air intake installation 300 can be at least one in graphite, carborundum, graphite and composite material of silicon carbide, silicon carbide lamination material, and the material composition of the second air intake installation 400 is rustless steel.
In the present embodiment, the coefficient of heat conduction of described first distance piece 700 is more than described second distance piece 400 coefficient of heat conduction. in the present embodiment, ratio by the ratio of the first upper surface Yu described first lower surface controlling described first air intake installation 300 and the second upper surface of described second air intake installation 400 and described second lower surface, it is possible to further such that the temperature of described first air intake installation 300 is lower than the temperature of described second air intake installation. the heat emissivity coefficient of described first air intake installation 300 can more than the heat emissivity coefficient of described second air intake installation 400. such as: the material of described first air intake installation 300 can be graphite or carborundum, the material composition of described second air intake installation 400 includes at least one in steel. concrete, the material of described first air intake installation 300 is graphite, and the material of described second air intake installation 400 is rustless steel. although the heat emissivity coefficient of graphite is greater than stainless heat emissivity coefficient, make described first air intake installation 300 adsorb the speed of heat and adsorb the speed of heat more than described second air intake installation 400, but the coefficient of heat conduction of graphite is more than the stainless coefficient of heat conduction, and, the coefficient of heat conduction of described first distance piece 700 is more than described second distance piece 400 coefficient of heat conduction, therefore the heat that described first air intake installation 300 absorbs discharges easily by carrying out heat exchange with described chiller 200, thus described chiller 200 to the cooling effect of the first air intake installation 300 more than the cooling effect to the second air intake installation 400, so that the temperature of described first air intake installation 300 is lower than the temperature of described second air intake installation 400. owing to the price comparison of graphite is low and heat-conductive characteristic is relatively good, rustless steel physical and chemical performance is stable, such that it is able to reduce the production cost of the first air intake installation 300 and the second air intake installation 400, and can guarantee that described first air intake installation 300 and the second air intake installation 400 are long for service life.
In the present embodiment, the heat emissivity coefficient of described first air intake installation 300 is less than the heat emissivity coefficient of described second air intake installation 400. Owing to the heat emissivity coefficient of described first air intake installation 300 is less than described second air intake installation 400, therefore may further ensure that the temperature difference between the first air intake installation 300 and the second air intake installation 400.
In the present embodiment, the temperature of described chiller 200 is more than or equal to 10 DEG C and less than or equal to 100 DEG C, and the temperature of described heating unit 120 can more than or equal to 1000 DEG C and less than or equal to 1500 DEG C. Such as: the temperature of described chiller 200 is 50 DEG C, the temperature of heating unit 120 is 1200 DEG C, and when the material of described first air intake installation 300 is graphite, when the material of described second air intake installation is rustless steel, the temperature of the first air intake installation 300 can be 290 DEG C, and the temperature of the second air intake installation 400 can be 680 DEG C.
In the present embodiment, described CVD device also includes: the detecting device (not shown) being made up of temperature sensor and baroceptor; Controlling device (not shown), it connects each temperature sensor, baroceptor, chiller 200 and heating unit 120 respectively.
In the present embodiment, described baroceptor is one, it is arranged on described reaction zone, the current gas pressure of the reaction zone detected is sent to control device, control device analysis and obtain the current gas pressure of reaction zone and the difference of the required air pressure of thin film deposition reaction, and then control the device realization air pressure adjustment to reaction chamber 600, until the air pressure needed for making the current gas pressure of reaction zone react equal to thin film deposition.
In the present embodiment, described temperature sensor is multiple, can at the first air intake installation 300, second air intake installation 400, chiller 200 and heating unit 120 are respectively provided with a temperature sensor, it is respectively used to the Current Temperatures of detection the first air intake installation 300, the Current Temperatures of the second air intake installation 400, the Current Temperatures of chiller 200 and the Current Temperatures of heating unit 120, and the said temperature that detection obtains is sent to control device, control device by analyze the Current Temperatures of the first air intake installation 300 and the first air intake installation 300 temperature required between temperature difference, the Current Temperatures of the second air intake installation 400 and the second air intake installation 400 temperature required between temperature difference regulate the temperature of chiller 200 or the temperature of heating unit 120, until making the Current Temperatures of the first air intake installation 300 more than or equal to 35 DEG C and less than or equal to 600 DEG C, the Current Temperatures of the second air intake installation 400 is more than or equal to 135 DEG C and less than or equal to 800 DEG C, and make the temperature of described first air intake installation 300 temperature than the 400 of described second air intake installation low, be more than or equal to 100 DEG C and less than or equal to 600 DEG C, such that it is able to be precisely controlled the process of thin film deposition.
In the MOCVD device described in the present embodiment, the material of described reaction chamber 600 is rustless steel.
In the present embodiment, the material of described supporting seat 110 is graphite. In the present embodiment, can at one layer of carborundum (SiC) layer of surface configuration of described supporting seat 110, so that supporting seat 110 has the characteristics such as high temperature resistant, the high and acidproof alkali salt of antioxidation, purity and organic reagent corrosion so that it is physical and chemical performance is more stable.
In the present embodiment, described heating unit 120 is specifically as follows radio frequency heating unit, infrared radiation heating unit or electrical resistor heating element etc., it is possible to carry out different selections according to the size of reaction chamber 600 and material. In RF heating, the supporting seat 110 of graphite by radio-frequency coil by inducing coupling heating, this heat form in large-scale reaction chamber 600 through frequently with, but generally system is excessively complicated. In order to avoid the complexity of system, in slightly smaller reaction chamber 600, generally adopting infrared radiation heating mode, the heat energy that halogen tungsten lamp produces is converted into infrared energy, and the supporting seat 110 of graphite absorbs this infrared energy and is converted back into heat energy. In resistance heating manner, by the heating of resistance wire, and then realize the heating to supporting seat 110.
In the present embodiment, described heating unit 120 can also be integrated in described supporting seat 110, and it is known for those skilled in the art, therefore does not repeat them here.
In the present embodiment, described chiller 200 has cooling duct, in order to pass into cooling gas or cooling liquid. Specifically, described chiller 200 can adopt cooling by water, it would however also be possible to employ air-cooled cooling, and the concrete structure of its correspondence is known for those skilled in the art, therefore does not repeat them here. By controlling the temperature of chiller 200 in the present embodiment, it is possible to make two air intake installations have different temperature change value, to adapt to different spray assemblies temperature requirements. Additionally, chiller 200 also can make spray assemblies be in relatively low temperature, extend the service life of spray assemblies.
In the present embodiment, described CVD device can also include: rotary drive unit (not shown), described rotary drive unit drives described pedestal 100 or spray assemblies to rotate in the deposition process of described chemical vapor deposition unit, so that thin film deposition is evenly. In the present embodiment, described rotary drive unit drives described pedestal 100 to rotate.
In the present embodiment, the first air intake installation 300 and the second air intake installation 400 are combined into a disc; Described disc is divided into multiple fan section, and the plurality of fan section includes the first fan section and the second fan section that alternate intervals is arranged. Described first air intake installation 300 is arranged on the first fan section of described disc, and described second air intake installation 400 is arranged on the second fan section of described disc.
In the present embodiment, described first air intake installation 300 also includes some first gas diffusion units 310 with some first pores, and described spray assemblies also includes the first air inlet pipe (not shown); Described each first gas diffusion unit 310 constitutes first fan section of described disc; Described first air inlet pipe runs through described chiller 200 and connects with the first gas diffusion unit 310, and described first gas enters the first gas diffusion unit 310 from the first air inlet pipe, and enters reaction zone from the first pore of gas diffusion unit 310. First distance piece 700, the shape size of described first distance piece 700 and the shape size of the first gas diffusion unit 310 it is both provided with identical between each first gas diffusion unit 310 and chiller 200. Described first gas diffusion unit 310 can be tubulose, tabular or lamellar. In the present embodiment, it is preferable that described first gas diffusion unit 310 is gas diffusion tube.
In the present embodiment, described second air intake installation 400 includes some second gas diffusion units 410 with some second pores; Described spray assemblies also includes the second air inlet pipe (not shown), and described each second gas diffusion unit 410 constitutes second fan section of described disc; Described second air inlet pipe runs through described chiller 200 and connects with the second gas diffusion unit 410, and described second gas enters the second gas diffusion unit 410 from the second air inlet pipe, and enters reaction zone from the second pore of the second gas diffusion unit 410. Second distance piece 800, the shape size of described second distance piece 800 and the shape size of the second gas diffusion unit 410 it is both provided with identical between each second gas diffusion unit 410 and chiller 200. Described second gas diffusion unit 410 can be tubulose, tabular or lamellar. In the present embodiment, it is preferable that described second gas diffusion unit 410 is gas diffusion tube.
In the present embodiment; first gas diffusion unit 310 of described first air intake installation 300 and the second gas diffusion unit 410 of described second air intake installation 400 can also is that spaced sheathed annular anemostat, and it should not limit the scope of the invention at this.
Utilizing above-mentioned chemical deposition equipment that spray assemblies is carried out temperature controlled method, the method includes:
Step one: carry out chemical deposition reaction;
Step 2: measure described gas shower assembly temperature;
Step 3: measure described reaction chamber substrate temperature;
Step 4: the mixed carrier gas of the first carrier gas and the second carrier gas is provided according to the described gas shower assembly temperature measured and described substrate temperature.
Said method also includes, and the proportioning improving described first carrier gas reduces described gas shower assembly temperature. Or the proportioning reducing described first carrier gas improves described gas shower assembly temperature.
In the present embodiment, the first described carrier gas is preferably hydrogen, and described second carrier gas is preferably nitrogen. But the first carrier gas and the second carrier gas are not limited to These gases, but can be the gaseous species that arbitrarily can realize above-mentioned adjustment gas shower assembly temperature.
Fig. 4 illustrates that mixed gases matching adjusts the spray assemblies variations in temperature schematic diagram of front and back. For the ease of highlighting spray assemblies temperature variations, and by it compared with heter temperature change, the transverse axis that Fig. 4 demonstrates is time shaft, it is heter temperature coordinate at the vertical coordinate near time shaft starting point, it is spray assemblies temperature coordinate at the vertical coordinate away from time shaft starting point, or claims spray head temperature coordinate. It doesn't matter for the temperature curve 42 of heater and mixed gases matching adjustment, for independent controlled quentity controlled variable. As it can be seen, heter temperature was its temperature rise period of control at 0 second about-500 seconds; Being heated to stationary operational phase at 500 seconds about-3300 seconds for heater, this stage can be applicable to the PROCESS FOR TREATMENT stage; It was the temperature-fall period of heater at 3300 seconds-4000 seconds. And spray assemblies temperature curve 41 is affected bigger by mixed gases matching adjustment. Continue shown in ginseng Fig. 4, from about 750 seconds to 1200 seconds, be stage of raising with the temperature of heater of spray assemblies temperature. 1200 to 2700 seconds is spray assemblies temperature with the temperature stabilization of heater and stabilization sub stage. When 2700 seconds, mixed gases matching is changed, specifically, this experiment under MOCVD deposition process conditions, only by the mixed proportion of hydrogen and nitrogen from 100: 0 become 0: 100 time, spray assemblies temperature sharply raises. 2700 seconds to 2900 seconds, be raise after spray assemblies temperature changes with gas mixture ratio example. 2900 to 3500 seconds, be that spray assemblies temperature is stablized and stable section with gas mixture ratio example. 3500 to 4000 seconds is spray assemblies temperature reduces with the temperature of heater and stage of reducing. In addition, as this area, general those skilled in the art are to be understood that, under the different technology conditions of MOCVD deposition, may result in the actual temperature of spray assemblies heating to vary in size, but no matter under which kind of process conditions, by the mixed proportion of above-mentioned hydrogen and nitrogen from 100: 0 become 0: 100 time all can cause that the situation that changes comparatively rapidly of above-mentioned spray assemblies temperature occurs. Therefore, the chemical meteorology deposition device described in the present embodiment, it is achieved that control and the adjustment to spray assemblies own temperature, carries out accurate temperature control it is achieved thereby that design according to expectation to differential responses gas.
Embodiment two
Fig. 5 is the structural representation of embodiment of the present invention CVD device, and Fig. 5 is the structural representation that BB ' direction obtains along Fig. 5. Referring to shown in Fig. 5 and Fig. 6, the present embodiment and embodiment one are distinctive in that: the first gas diffusion unit 310 in described first air intake installation 300 and the second gas diffusion unit 410 in described second air intake installation 400 are rectangle, and first gas diffusion unit 310 and the second gas diffusion unit 410 be arranged alternately successively, described heating unit 120 is in heating process, and described first air intake installation 300 has different temperature from described second air intake installation 400.
In the present embodiment, the first air intake installation 300 and the second air intake installation 400 combine, so that whole spray assemblies is relatively simple for structure. Not restriction such as described first gas diffusion unit 310 and the number of the second gas diffusion unit 410, size etc., and its number is more many, the first gas and the mixing of the second gas are more uniform.
It should be noted that, in other embodiments of the invention, the first of the first air intake installation 300 give vent to anger face and pedestal 100 supporting surface between the first vertical dimension can give vent to anger more than the second of the second air intake installation 400 face and pedestal 100 supporting surface between the second vertical dimension.
In addition, lateral separation can also be had between described first air intake installation 300 and described second air intake installation 400, thus reducing interfering of temperature between two air intake installations, make the control to two air intake installation temperature simpler accurately, preferably, described lateral separation is filled with heat insulation material to reduce interfering of temperature between two air intake installations further.
Spray assemblies in above example all includes two air intake installations, chiller is arranged with each air intake installation stacking respectively, two air intake installations are arranged side by side, by being respectively provided with a different distance piece of the coefficient of heat conduction between each air intake installation and chiller, and make the temperature difference of two air intake installations. It should be noted that, spray assemblies can also include the air intake installation of three and more than three, similarly, by arranging the distance piece that the coefficient of heat conduction is different between part or all of air intake installation and chiller, chiller is arranged with part or all of air intake installation stacking, part or all of air intake installation is arranged side by side, the equally possible temperature difference making part or all of air intake installation.
Although the present invention discloses as above with preferred embodiment, but the present invention is not limited to this. Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (11)
1. a chemical vapor deposition unit, it is characterised in that including:
Reaction chamber, in order to process the substrate being positioned in described reaction chamber;
Pedestal, is arranged at inside described reaction chamber, and described pedestal is for supporting one or more pending substrate;
Heating unit, is used for heating described pedestal and described substrate, and described heating unit has control loop; Gas shower assembly, is arranged at the top of described reaction chamber, and described gas shower assembly includes the first air intake installation and the second air intake installation, forms reaction zone between described gas shower assembly and described pedestal; Described gas shower assembly is by reaction gas distribution to described reaction zone;
Lid, is used for closing described reaction chamber, and described lid comprises a chiller, and described gas shower assembly is between described lid and described pedestal;
It is formed with slit between described lid and described gas shower assembly;
First temperature measuring equipment, for measuring the temperature of described gas shower assembly;
Temperature control feeder, in order to by mixed carrier gas supply to described slit, described mixed carrier gas includes the first carrier gas and the second carrier gas, the described temperature control feeder temperature according to described gas shower assembly, the corresponding proportioning adjusting described first carrier gas and described second carrier gas.
2. chemical vapor deposition unit according to claim 1, it is characterised in that described first carrier gas includes at least one in hydrogen or helium, and described second carrier gas includes at least one in nitrogen or argon.
3. chemical vapor deposition unit according to claim 2, it is characterised in that in described mixed carrier gas, the ratio of the first carrier gas is more high, the temperature measured by described first temperature measuring equipment is more low.
4. chemical vapor deposition unit according to claim 1, it is characterised in that the gas shower assembly temperature that described temperature control feeder is measured according to described first temperature measuring equipment supplies described mixed carrier gas.
5. chemical vapor deposition unit according to claim 1, it is characterised in that described reaction chamber also has for measuring the second temperature measuring equipment of described substrate temperature.
6. chemical vapor deposition unit according to claim 5, it is characterised in that the substrate temperature that described temperature control feeder is measured according to described second temperature measuring equipment supplies described mixed carrier gas.
7. chemical vapor deposition unit according to claim 5, it is characterized in that, described first temperature measuring equipment temperature sensor and the second temperature measuring equipment include the thermoelectricity of attachment and occasionally use at least one in the survey tool of the non-contact temperature based on infra-red radiation, fluorescence or pyrometry.
8. chemical vapor deposition unit according to claim 1, it is characterised in that the width of described slit is less than 5mm.
9. spray assemblies is carried out temperature controlled method by equipment according to claim 1, it is characterised in that comprise the following steps:
Step one: carry out chemical deposition reaction;
Step 2: measure described gas shower assembly temperature;
Step 3: measure described reaction chamber substrate temperature;
Step 4: the mixed carrier gas of the first carrier gas and the second carrier gas is provided according to the described gas shower assembly temperature measured and described substrate temperature.
10. method according to claim 9, it is characterised in that also include: the proportioning improving described first carrier gas reduces described gas shower assembly temperature.
11. method according to claim 9, it is characterised in that also include: the proportioning reducing described first carrier gas improves described gas shower assembly temperature.
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| CN114753001A (en) * | 2022-05-05 | 2022-07-15 | 季华实验室 | Epitaxial deposition reaction chamber, deposition system and deposition method |
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| CN105648425B (en) | 2018-06-26 |
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Denomination of invention: A chemical vapor deposition device and its temperature control method Effective date of registration: 20230209 Granted publication date: 20180626 Pledgee: Agricultural Bank of China Limited Shanghai Songjiang Sub-branch Pledgor: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Registration number: Y2023310000023 |