CN103014666B - Chemical vapor deposition (CVD) device - Google Patents
Chemical vapor deposition (CVD) device Download PDFInfo
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- CN103014666B CN103014666B CN201110287503.8A CN201110287503A CN103014666B CN 103014666 B CN103014666 B CN 103014666B CN 201110287503 A CN201110287503 A CN 201110287503A CN 103014666 B CN103014666 B CN 103014666B
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Abstract
The invention provides a chemical vapor deposition (CVD) device. The device comprises a reaction chamber, a cooling device, a spraying assembly arranged at the top of the reaction chamber and a base arranged opposite to the spraying assembly, wherein the base is provided with a heating unit; the spraying assembly comprises a first gas inlet device and a second gas inlet device which are respectively used for transmitting first gases and second gases to a reaction zone between the base and the spraying assembly; the cooling device, the first gas inlet device and the second gas inlet device are stacked in sequence; the second gas inlet device is arranged on the side facing the base and is closer to the base than the cooling device and the first gas inlet device; the thermal conductivity of the first gas inlet device is greater than that of the second gas inlet device; and in the heating process of the heating unit, the first gas inlet device and the second gas inlet device have different temperatures. The device can provide different temperatures for gases in different gas inlet devices.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly a kind of chemical vapor deposition unit.
Background technology
Chemical vapour deposition (Chemical vapor deposition, be called for short CVD) be that reactive material issues biochemical reaction in gaseous state condition, generate the solid matrix surface that solid matter is deposited on heating, and then making the Technology of solid material, it is achieved by chemical vapor deposition unit.Particularly, CVD device passes into reactant gases in reaction chamber by diffuser, and controls the reaction conditions such as pressure, temperature of reaction chamber, and reactant gases is reacted, thereby completes depositing operation step.In order to deposit required film, generally need in reaction chamber, pass into multiple different reactant gases, and also need to pass into other nonreactive gass such as carrier gas or sweeping gas in reaction chamber, therefore in CVD device, need to arrange multiple diffusers.Install as example taking metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) below, introduce the CVD device that prior art comprises multiple diffusers.
MOCVD is mainly used in the III-V families such as gan, gallium arsenide, indium phosphide, zinc oxide, the preparation of the thin layer monocrystalline functional structure material of II-VI compounds of group and alloy, along with the range of application of above-mentioned functions structured material constantly expands, MOCVD device has become one of important device of chemical vapor deposition unit.MOCVD is generally using II family or III family metal organic source and VI family or V family hydride source etc. as reactant gases, with hydrogen or nitrogen as carrier gas, on substrate, carry out vapor phase epitaxial growth in pyrolysis mode, thus the thin layer monocrystal material of grow various II-VI compound semiconductors, III-V compound semiconductor and their multivariate solid solution.Due to II family or III family metal organic source different with the transmission condition of VI family or V family hydride source, therefore need respectively II family or III family metal organic source and VI family or V family hydride source to be transferred to substrate top by different diffusers.
MOCVD device of the prior art generally comprises:
Reaction chamber;
Be positioned at the spray assembly at described reaction chamber top, described spray assembly comprises two diffusers, and described two diffusers transfer to substrate top by II family or III family metal organic source and VI family or V family hydride source respectively;
With the pedestal that described spray assembly is oppositely arranged, described pedestal has heating unit, and described pedestal is for supporting and heated substrates.
Described spray assembly, according to the difference of the flow direction of the relative substrate of air-flow of provided reactant gases, is divided into rectilinear and horizontal.Horizontal spray assembly refers to that described spray assembly makes the air-flow of reactant gases flow along the horizontal direction that is parallel to substrate; Rectilinear spray assembly refers to that described spray assembly makes the air-flow of reactant gases flow along the vertical direction perpendicular to substrate.Compared with horizontal spray assembly, rectilinear spray assembly can produce two-dimensional axial symmetric and flow, and suppresses thermal convection vortex, forms respectively more uniform speed, temperature and concentration boundary layer, thereby obtain better thin film deposition above substrate.
Referring to China Patent Publication No. be: CN101122012A, this patent application provides a kind of spray assembly, it can realize III family metallorganics and V family hydride gas is independently supplied gas from spray assembly one-piece construction both sides respectively, and evenly spray above the substrate of reaction chamber, the method of its realization is: comprise two groups of pectination spray headers, first group of pectination spray header forms by gas house steward A 2 of inlet suction port 1 and gas A ventilation arm 3 that Duo Gen is arranged in parallel are housed, one end of described gas A ventilation arm 3 is communicated with described gas house steward A 2 and the other end is blind end, second group of pectination spray header forms by gas house steward B 5 of inlet suction port 4 and gas B ventilation arm 6 that Duo Gen is arranged in parallel are housed, one end of described each gas B ventilation arm 6 is communicated with described gas house steward B 5 and the other end is blind end, specifically as shown in Figure 1.
Referring to U.S. Patent Publication No. be: US2009/0098276A1, it provides current MOCVD device the most general spray header form, III family metal organic source and V family hydride source gas enter respectively the first air inlet overall channel and the second air inlet overall channel of spray header device from two inlet mouths, and by the first bypass passage and the second bypass passage, finally enter hybrid channel, the backward substrate of giving vent to anger sprays.There is pyrolysis respectively in III family metal organic source gas and V family hydride source gas, and be epitaxially grown to III-V compound semiconductor on the substrate of heating.
In prior art, in CVD device, spraying each diffuser in assembly all equates with the distance of pedestal, and the identical material of the general employing of each diffuser, the heat-conduction coefficient that is each diffuser is identical, therefore the temperature of the each diffuser in same reaction chamber is identical, finally makes the temperature of all reactant gasess identical.But the decomposition temperature of differential responses gas may be different, if the decomposition temperature of III family metal organic source is well below the decomposition temperature of V family hydride source.
In the time that MOCVD device is heated to comparatively high temps by III family metal organic source and V family hydride source gas simultaneously, just can first there is decomposition reaction in III family metal organic source, and react with V family hydride source gas, thereby can produce a large amount of solid particulates.These solid particulates can be deposited on the surface of spray assembly on the one hand, finally may drop on the film depositing; Therefore,, for preventing that the surperficial particle that is deposited on spray assembly from dropping on the film depositing, need often spray assembly to be cleaned, thereby increase the cost cleaning; On the other hand, the generation of these solid particulates has consumed partial reaction gas, thereby causes the waste of material, and metal organic (Metal Organic, MO) source material is expensive, this inevitable raising that just cause production cost.Meanwhile, also certainly reduced the sedimentation rate of film.
In the time that MOCVD device is heated to lesser temps by III family metal organic source and V family hydride source gas simultaneously, V family hydride source gas is just difficult for occurring decomposition reaction, is finally just difficult to form III-V family dense film.Even if deposition obtains film, these films also have a lot of pores, and are easy to come off.
In sum, in prior art, III family metal organic source and V family hydride source gas heating are arrived same temperature by MOCVD device, the poor quality of the film of end reaction deposition, and film deposition rate is low, production cost is high.In other CVD devices except MOCVD device, also there is the different situation of the required Heating temperature of differential responses gas, when these differential responses gas heating are arrived to same temperature, similarly, the film quality of end reaction deposition is very poor, and film deposition rate is low, production cost is high.Similarly, in other CVD device, also exist differential responses gas to need the situation of differing temps.
Therefore, how to make CVD device just become technical problem urgently to be resolved hurrily for different reactant gasess provides different temperature.
Summary of the invention
The object of this invention is to provide a kind of chemical vapor deposition unit, think that the gas in various inlet device provides different temperature.
For addressing the above problem, the invention provides a kind of chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the pedestal that is positioned at the spray assembly at described reaction chamber top and is oppositely arranged with described spray assembly, described pedestal has heating unit, described spray assembly comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assembly; Described refrigerating unit, described the first diffuser and described the second diffuser are cascading, described the second diffuser is positioned at towards a side of described pedestal and compared to more pedestal described in neighbour of described refrigerating unit, described the first diffuser, the heat-conduction coefficient (Thermal Conductivity) of described the first diffuser is greater than the heat-conduction coefficient of described the second diffuser, described heating unit is in heat-processed, and described the first diffuser has different temperature from described the second diffuser.
Preferably, the material of described the first diffuser is graphite or silicon carbide, and the material of described the second diffuser comprises steel.
Preferably, described the first gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
Preferably, described the second gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
Preferably, described the first diffuser is used for transmitting III family metal organic source, and described the second diffuser is used for transmitting V family hydride source.
Preferably, described III family metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3one or more in gas.
Preferably, described V family hydride source comprises NH
3, PH
3, AsH
3one or more in gas.
Preferably, described heating unit is in heat-processed, and the temperature of described the first diffuser is less than the temperature of described the second diffuser.
Preferably, the temperature head between described the first diffuser and described the second diffuser is more than or equal to 100 DEG C and be less than or equal to 600 DEG C.
Preferably, the temperature of described the first diffuser is more than or equal to 35 DEG C and be less than or equal to 600 DEG C, and the temperature of described the second diffuser is more than or equal to 135 DEG C and be less than or equal to 800 DEG C.
Preferably, also comprise: rotary drive unit, described rotary drive unit drives described pedestal or spray assembly to be rotated in the deposition process of described chemical vapor deposition unit.
Preferably, described the second diffuser comprises some gas diffusion tube with some the second pores, described gas diffusion tube is embedded among described the first diffuser at least partly, and exposes described the second pore to described reaction zone so that the second gas is discharged from described the second pore.
Preferably, between described the second diffuser and described the first diffuser, there is interval, and do not carry out thermal conduction between described the second diffuser and described the first diffuser.
Preferably, described refrigerating unit has cooling channel, in order to pass into cooling gas or cooling liqs.
Preferably, described the first diffuser is diffusion disc, and described diffusion disc has upper surface and the lower surface relative with described upper surface, and described upper surface is close to described refrigerating unit, described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some the first pores; Described the first gas enters described reaction zone via described the first inlet mouth, gaseous diffusion cell and described the first pore successively.
Preferably, described gaseous diffusion cell has at least one first spreading grooves and multiple the second spreading grooves, described the first spreading grooves is along week of described diffusion disc along annular setting, described the second spreading grooves is along the radial direction setting of described diffusion disc, described the second spreading grooves connects described the first spreading grooves, described the second gas flows into described the second spreading grooves by described the first spreading grooves, and described the first pore connects described the second spreading grooves.
Preferably, described the first inlet mouth is set to two, is separately positioned on the relative both sides of described diffusion disc.
Preferably, arbitrary described the first inlet mouth is arranged in described the first spreading grooves, and described in adjacent two between the second spreading grooves.
Preferably, described the second diffuser comprises air-guide disk and some gas diffusion tube; Described spray assembly also comprises the second induction trunk, and described the second induction trunk runs through the center of described diffusion disc and is connected with described air-guide disk; In described gas diffusion tube, be provided with some the second pores, one end of described gas diffusion tube is communicated with described air-guide disk; Described the second gas enters described reaction zone via described the second induction trunk, air-guide disk, gas diffusion tube and described the second pore successively.
Preferably, described each gas diffusion tube is isometric, and is radial around described air-guide disk and evenly arranges.
Preferably, between described gas diffusion tube and described diffusion disc, there is interval, and do not carry out thermal conduction between gas diffusion tube and described diffusion disc.
Preferably, described chemical vapor deposition unit is organometallics chemical vapour deposition (MOCVD) device, low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) device, plasma activated chemical vapour deposition (Plasma Chemistry Vapor Deposition, PCVD) device or ald (Atomic Layer Deposition, ALD) device.
Preferably, the heat emissivity coefficient of described the first diffuser is less than or equal to the heat emissivity coefficient of described the second diffuser.
Compared with prior art, the present invention has the following advantages:
1) described refrigerating unit, described the first diffuser and described the second diffuser are cascading, the heat-conduction coefficient of described the first diffuser is greater than the heat-conduction coefficient of described the second diffuser, thereby make described heating unit in heat-processed, described refrigerating unit is not identical with the speed of cooling of described the second diffuser to described the first diffuser, thereby make described the first diffuser there is different temperature from described the second diffuser, and then at high temperature first there is predecomposition again the gas reaction high with the decomposition temperature that enters reaction zone from the second diffuser and produce a large amount of solid particulates in the low gas of decomposition temperature of having avoided entering reaction zone from the first diffuser, reduce the solid particulate being deposited on spray assembly and departed from the possibility on film, also avoided the gas that decomposition temperature is high cannot decompose at low temperatures, thereby improve the speed of thin film deposition, improve the quality of film, starting material are saved, reduce and clean and production cost.
2) described the first diffuser is used for transmitting III family metal organic source, described the second diffuser is used for transmitting V family hydride source, because MOCVD growth technique requires high, conventionally need high temperature control, and need accurately to control the proportioning of reactant gases, and the decomposition temperature of the decomposition temperature of III family metal organic source and V family hydride source has larger difference, therefore when controlling while making the temperature of III family metal organic source and V family hydride source different, make III family metal organic source can receive different temperature from V family hydride source, just can reduce the generation of side reaction, improve quality and the sedimentation rate of III-V compound semiconductor, prevent the waste of III family metal organic source and V family hydride source.
3) temperature of described the first diffuser is more than or equal to 35 DEG C and be less than or equal to 600 DEG C, the temperature of described the second diffuser is more than or equal to 135 DEG C and be less than or equal to 800 DEG C, the decomposition temperature of III family metal organic source is far below the decomposition temperature of V family hydride source, the temperature that the invention enables III family metal organic source and V family hydride source respectively within the scope of best separately decomposition temperature, thereby can obtain with speed of reaction faster the III-V family dense film of better quality.
4) described chemical vapor deposition unit also comprises: rotary drive unit, described rotary drive unit drives described pedestal or spray assembly to be rotated in the deposition process of described chemical vapor deposition unit, finally makes thin film deposition more even.
5) described the second diffuser comprises some gas diffusion tube with some the second pores, described gas diffusion tube part is embedded among described the first diffuser, and expose described in it the second pore to described reaction zone so that the second gas can be discharged to described the second pore, thereby make described spray assembly compacter, be conducive to reduce the volume of described chemical vapor deposition unit.
6) described refrigerating unit has cooling channel, in order to pass into cooling gas or cooling liqs, by controlling the temperature of refrigerating unit, can make two diffusers have different temperature change value; In addition, refrigerating unit makes to spray assembly in lower temperature, has extended the work-ing life of spray assembly.
7) between described the second diffuser and described the first diffuser, there is interval, and do not carry out thermal conduction, reduced the phase mutual interference of temperature between two diffusers, make the control of two diffuser temperature more accurately simple.
8) described the first diffuser is diffusion disc, and described diffusion disc has upper surface and the lower surface relative with described upper surface, and described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some the first pores; Described the first gas enters described reaction zone via described the first inlet mouth, gaseous diffusion cell and described the first pore successively, the first gas can first cushion and evenly diffusion in gaseous diffusion cell, and then enter equably reaction zone from the first pore, thereby the temperature that makes to enter the first gas uniform of reaction zone and contact and then accurately control fully the first gas with the first diffuser.
9) described gaseous diffusion cell has at least one first spreading grooves and multiple the second spreading grooves, described the first spreading grooves is along week of described diffusion disc along annular setting, described the second spreading grooves is along the radial direction setting of described diffusion disc, described the first spreading grooves cushions the first gas entering in the first spreading grooves, make the evenly diffusion in the first spreading grooves of the first gas, thereby make to enter the first spreading grooves the first gas uniform flow to described multiple the second gaseous diffusion cell, further increased by the first gas and diffused to the homogeneity of reaction zone.
10) described the first inlet mouth is set to two, is separately positioned on the relative both sides of described diffusion disc, in ensureing the first gas high flow, simple in structure, and has improved the homogeneity of the first gas flow.
11) arbitrary described the first inlet mouth is arranged in described the first spreading grooves, and between described adjacent two second spreading grooves, the first gas like this can first fully spread in the first spreading grooves, fully the first gas after diffusion can evenly enter the second spreading grooves, and can directly not enter specific second gaseous diffusion cell, cause inhomogeneous that the second gas distributes in the second spreading grooves, thereby increased the homogeneity that the first gas enters reaction zone.
12) described the second diffuser comprises air-guide disk and some gas diffusion tube; Described spray assembly also comprises the second induction trunk, and described the second induction trunk runs through the center of described diffusion disc and is communicated with described air-guide disk; In described gas diffusion tube, be provided with some the second pores, one end of described gas diffusion tube is connected with described air-guide disk; Described the second gas enters described reaction zone via described the second induction trunk, air-guide disk, gas diffusion tube and described the second pore successively, because the second gas of introducing from the second induction trunk first flow in described gas diffusion tube after buffering described gas diffusion disc again, thereby strengthen the homogeneity that the second gas distributes between each gas diffusion tube, ensured the second gas uniform and entered described reaction zone.
13) described each gas diffusion tube is isometric, and is radial around described air-guide disk and evenly arranges, and in ensureing the second gas uniform diffusion, described the second diffuser is simple in structure, has saved space.
Brief description of the drawings
Fig. 1 is a kind of structural representation that sprays assembly of prior art;
Fig. 2 is the structural representation of the CVD device of the embodiment of the present invention one;
Fig. 3 is the structural representation along AA ' direction obtains in Fig. 2;
Fig. 4 is the structural representation of the CVD device of the embodiment of the present invention two;
Fig. 5 is the structural representation along BB ' direction obtains in Fig. 4;
Fig. 6 is the structural representation of the CVD device of the embodiment of the present invention three;
Fig. 7 is the structural representation along CC ' direction obtains in Fig. 6;
Fig. 8 is the structural representation of the CVD device of the embodiment of the present invention four;
Fig. 9 is the surface structure schematic diagram of the spray assembly of the embodiment of the present invention four;
Figure 10 is the lower surface configuration schematic diagram of the spray assembly of the embodiment of the present invention four.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implemented but the present invention can also adopt other to be different from alternate manner described here, therefore the present invention is not subject to the restriction of following public specific embodiment.
Just as described in the background section, in CVD device, need to pass into multiple gases, the all gas unification passing into is heated to uniform temp by existing CVD device, but the required temperature of gas with various there are differences, therefore reduced the speed of thin film deposition, in film, introduce defect, caused raw-material waste, improved production cost.
For overcoming above-mentioned defect, the invention provides a kind of chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the pedestal that is positioned at the spray assembly at described reaction chamber top and is oppositely arranged with described spray assembly, described pedestal has heating unit, described spray assembly comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assembly; Described refrigerating unit, described the first diffuser and described the second diffuser are cascading, described the second diffuser is positioned at towards a side of described pedestal and compared to more pedestal described in neighbour of described refrigerating unit, described the first diffuser, the heat-conduction coefficient of described the first diffuser is greater than the heat-conduction coefficient of described the second diffuser, described heating unit is in heat-processed, and described the first diffuser has different temperature from described the second diffuser.Described the first diffuser is adjacent with described refrigerating unit and carry out direct heat exchange, between described the second diffuser and described refrigerating unit, be provided with described the first diffuser, therefore described the second diffuser need to carry out heat exchange by described the first diffuser and described refrigerating unit, and, the heat-conduction coefficient of described the first diffuser is greater than the heat-conduction coefficient of described the second diffuser, thereby makes described the first diffuser have different temperature from described the second diffuser.Avoid gas that decomposition temperature is low the gas-phase reaction of the gas high with decomposition temperature at high temperature first occurs after predecomposition again and produce a large amount of solid particulates, reduce the solid particulate being deposited on spray assembly and departed from the possibility on film, also avoided the gas that decomposition temperature is high cannot decompose at low temperatures, finally improve the speed of thin film deposition, improve the quality of film, save starting material, reduced and clean and production cost.
Be elaborated below in conjunction with accompanying drawing.
Embodiment mono-
Fig. 2 is the structural representation of the present embodiment CVD device, and Fig. 3 is the structural representation along AA ' direction obtains in Fig. 2.As shown in Figures 2 and 3, the CVD device described in the present embodiment comprises:
Reaction chamber 600;
Refrigerating unit 200;
Be positioned at the spray assembly at described reaction chamber 600 tops, described spray assembly comprises the first diffuser 300 and the second diffuser 400, for respectively by the first gas and the second gas transmission to pedestal 100 and the reaction zone spraying between assembly, the heat-conduction coefficient of described the first diffuser 300 is greater than the heat-conduction coefficient of described the second diffuser 400;
Described refrigerating unit 200, described the first diffuser 300 are cascading with described the second diffuser 400;
With the pedestal 100 that described spray assembly is oppositely arranged, pending substrate 500 is positioned on pedestal 100, and described pedestal 100 has heating unit 120.
In the present embodiment, described refrigerating unit 200, described the first diffuser 300 is cascading with described the second diffuser 400, the heat-conduction coefficient of described the first diffuser 300 is greater than the heat-conduction coefficient of described the second diffuser 400, described the first diffuser 300 is adjacent with described refrigerating unit 200 and carry out direct heat exchange, between described the second diffuser 400 and described refrigerating unit 200, be provided with described the first diffuser 300, therefore described the second diffuser 400 need to carry out heat exchange with described refrigerating unit 200 by described the first diffuser 300, and, the heat-conduction coefficient of described the first diffuser 300 is greater than the heat-conduction coefficient of described the second diffuser 400, thereby make described refrigerating unit 200 be greater than the cooling performance to the second diffuser 400 to the cooling performance of the first diffuser 300.The temperature of described the first diffuser 300 will be lower than the temperature of described the second diffuser 400, avoid gas that decomposition temperature is low that the gas reaction high with decomposition temperature at high temperature first occurs after predecomposition again and produced a large amount of solid particulates, reduce the solid particulate being deposited on spray assembly and departed from the possibility on film, also avoided the gas that decomposition temperature is high cannot decompose at low temperatures, improve the speed of thin film deposition, improve the quality of film, save starting material, reduced and clean and production cost.
Described the first gas comprises one or more in reacting precursor, carrier gas, sweeping gas, and described the second gas also comprises one or more in reacting precursor, carrier gas, sweeping gas.
Described CVD device can be the one in MOCVD device, LPCVD device, PCVD device or ALD device.Below taking described CVD device as MOCVD device is as example; be that described the first diffuser 300 is for transmitting III family metal organic source; described the second diffuser 400 is that example describes for transmitting V family hydride source; now the temperature of described the first diffuser 300 is less than the temperature of described the second diffuser 400, but should not limit the scope of the invention with this.
It should be noted that, when the first diffuser 300 transmits III family metal organic source and the second diffuser 400 and transmits V family hydride source, the first diffuser 300 and the second diffuser 400 can also transmit carrier gas simultaneously, as: hydrogen or nitrogen.
Because MOCVD growth technique requires high, conventionally need high temperature control, and need accurately to control the proportioning of reactant gases, and the decomposition temperature of the decomposition temperature of III family metal organic source and V family hydride source has larger difference, therefore when controlling while making the temperature of III family metal organic source and V family hydride source different, what make III family metal organic source can receive different decomposition temperatures from V family hydride source, just can reduce the generation of side reaction, improve quality and the sedimentation rate of III-V compound semiconductor, prevent the waste of III family metal organic source and V family hydride source.
Described III family metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3one or more in gas, its decomposition temperature is more than or equal to 35 DEG C and be less than or equal to 600 DEG C.Described V family hydride source comprises NH
3, PH
3, AsH
3one or more in gas, its decomposition temperature is more than or equal to 135 DEG C and be less than or equal to 800 DEG C.For reaching best thin film deposition effect, the temperature head between described the first diffuser 300 and described the second diffuser 400 should be more than or equal to 100 DEG C and be less than or equal to 600 DEG C.The present embodiment need to make the temperature of described the first diffuser 300 be more than or equal to 35 DEG C and be less than or equal to 600 DEG C, and the temperature of described the second diffuser 400 is more than or equal to 135 DEG C and be less than or equal to 800 DEG C.Because the decomposition temperature of III family metal organic source is far below the decomposition temperature of V family hydride source, the temperature that the present embodiment makes III family metal organic source and V family hydride source is respectively within the scope of best separately decomposition temperature, thereby speed of reaction obtains the III-V family dense film of better quality faster.
Described pedestal 100 comprises: supporting seat 110, and one or more pending substrates 500 are arranged on the upper surface of described supporting seat 110, and described supporting seat 110 is for supporting described substrate 500; Heating unit 120, is arranged on described supporting seat 110 belows, for described substrate 500 is heated.
Described the second diffuser 400 has the region that penetrates described the first diffuser 300, and described the first diffuser 300 is directly accepted the thermal radiation of the heating unit 120 of described pedestal 100 by described region.
The heat emissivity coefficient of described the first diffuser 300 can be greater than the heat emissivity coefficient of described the second diffuser 400, as: as described in the material of the first diffuser 300 can be graphite or silicon carbide, the material composition of described the second diffuser 400 can comprise steel.Although the heat emissivity coefficient of the first diffuser 300 can be greater than the heat emissivity coefficient of described the second diffuser 400, make described the first diffuser there is stronger thermal-radiating receptivity, but, because described refrigerating unit 200, described the first diffuser 300 and described the second diffuser 400 are cascading, and the heat-conduction coefficient of described the first diffuser 300 is greater than the heat-conduction coefficient of described the second diffuser 400, therefore still can ensure that the temperature of described the first diffuser 300 is lower than the temperature of described the second diffuser 400.Preferably, because the price comparison of graphite is low and heat-conductive characteristic is relatively good, stainless steel physical and chemical performance is stable, therefore the material of described the first diffuser 300 is graphite, the material of described the second diffuser 400 is stainless steel, thereby has reduced the production cost of the first diffuser 300 and the second diffuser 400.
The heat emissivity coefficient of described the first diffuser 300 preferably can equal the heat emissivity coefficient of described the second diffuser 400, so, can guarantee the temperature head between described the first diffuser 300 and described the second diffuser 400.Further, the heat emissivity coefficient of described the first diffuser 300 can also be less than the heat emissivity coefficient of described the second diffuser 400.Now, the heat emissivity coefficient of the first diffuser 300 is less than the heat emissivity coefficient of the second diffuser 400, will further guarantee that the temperature head between described the first diffuser 300 and described the second diffuser 400 reaches certain numerical value, thereby be more prone to realize the different of temperature between described the first diffuser 300 and described the second diffuser 400.
In order to make the temperature of the first diffuser 300 be more than or equal to 35 DEG C and be less than or equal to 600 DEG C, the temperature of the second diffuser 400 is more than or equal to 135 DEG C and be less than or equal to 800 DEG C, the temperature of refrigerating unit 200 described in the present embodiment can be more than or equal to 10 DEG C and be less than or equal to 100 DEG C, and the temperature of described heating unit 120 can be more than or equal to 1000 DEG C and be less than or equal to 1500 DEG C.For example: the temperature of refrigerating unit 200 is 50 DEG C, when the temperature of heating unit 120 is 1200 DEG C, the temperature of the first diffuser 300 is 290 DEG C, and the temperature of the second diffuser 400 is 680 DEG C.Further, by controlling the temperature of described heating unit 120 and described refrigerating unit 200, be mainly the temperature by controlling described refrigerating unit 200, just can control according to the difference of reactant gases the temperature of the first diffuser 300 and the second diffuser 400.
In addition, between described the second diffuser 400 and described the first diffuser 300, can there is interval, also can not there is interval.Preferably, between described the second diffuser 400 and described the first diffuser 300, there is interval, and between described the second diffuser 400 and described the first diffuser 300, do not carry out thermal conduction, thereby reduced the phase mutual interference of temperature between the first diffuser 300 and the second diffuser 400.
Described CVD device can also comprise: the proofing unit (not shown) being made up of temperature sensor and baroceptor; Control device (not shown), it connects respectively each temperature sensor, baroceptor, refrigerating unit 200 and heating unit 120.
Described baroceptor can be 1, be arranged on described reaction zone, the current air pressure of the reaction zone detecting is sent to control device, control device analysis obtains the current air pressure of reaction zone and thin film deposition and reacts the poor of required air pressure, and then realize the air pressure adjustment of control device to reaction chamber 600, react required air pressure until make the current air pressure of reaction zone equal thin film deposition.
Described temperature sensor can be multiple, can be at the first diffuser 300, the second diffuser 400, a temperature sensor is set respectively on refrigerating unit 200 and heating unit 120, be respectively used to detect the Current Temperatures of the first diffuser 300, the Current Temperatures of the second diffuser 400, the Current Temperatures of the Current Temperatures of refrigerating unit 200 and heating unit 120, and the said temperature that detection is obtained sends to control device, control device is by analyzing the poor of the Current Temperatures of the first diffuser 300 and the first diffuser 300 temperature between temperature required, the difference of the temperature between the Current Temperatures of the second diffuser 400 and the second diffuser 400 are temperature required regulates the temperature of refrigerating unit 200 or the temperature of heating unit 120, until make the Current Temperatures of the first diffuser 300 be more than or equal to 35 DEG C and be less than or equal to 600 DEG C, the Current Temperatures of the second diffuser 400 is more than or equal to 135 DEG C and be less than or equal to 800 DEG C, thereby can control more accurately the process of thin film deposition.
In MOCVD device, the material of described reaction chamber 600 is generally stainless steel.
The material of described supporting seat 110 can be graphite, preferably, described supporting seat 110 can also arrange on the surface of graphite one deck silicon carbide (SiC) layer, thereby make supporting seat 110 have the characteristics such as high temperature resistant, anti-oxidant and acidproof alkali salt and organic reagent corrosion, physical and chemical performance is more stable.
Described heating unit 120 is specifically as follows radio-frequency heater, infrared radiation heater or resistance heater etc., can carry out different selections according to the size of reaction chamber 600 and material.In RF heating, the supporting seat 110 of graphite is by radio-frequency coil by the induction heating that is coupled, and this heat form often adopts in large-scale reaction chamber 600, but system is too complicated conventionally.For fear of the complicacy of system, in slightly little reaction chamber 600, conventionally adopt infrared radiation heating mode, the heat energy that halogen tungsten lamp produces is converted into infrared energy, and the supporting seat 110 of graphite absorbs this radiating capacity and is transformed backheat energy.In resistive heating mode, by the heating of resistance wire, and then realize the heating to supporting seat 110.
Described heating unit 120 can also be integrated in described supporting seat 110, and it is known for those skilled in the art, therefore do not repeat them here.
Described refrigerating unit 200 has cooling channel, in order to pass into cooling gas or cooling liqs.Particularly, described refrigerating unit 200 can adopt cooling by water, also can adopt air-cooled coolingly, and its corresponding concrete structure is known for those skilled in the art, therefore do not repeat them here.In the present embodiment, by controlling the temperature of refrigerating unit 200, can make two diffusers there is different temperature change value; In addition, refrigerating unit 200 also can make to spray assembly in lower temperature, has extended the work-ing life of spray assembly.
Described CVD device can also comprise: rotary drive unit (not shown), described rotary drive unit drives described pedestal 100 or spray assembly to be rotated in the deposition process of described chemical vapor deposition unit, thereby makes thin film deposition more even.Preferably, described rotary drive unit drives described pedestal 100 to rotate.
Shown in Figure 3, the gas diffusion plate that in the present embodiment, the first diffuser 300 is rectangle, the second diffuser 400 comprises multiple gas diffusion tube that be arranged in parallel 410, in gas diffusion tube 410, be provided with multiple the second pore (not shown), the first diffuser 300 is provided with multiple the first pore (not shown)s on not corresponding with gas diffusion tube 410 position, with the phase mutual interference for fear of the first gas and the second gas.
Described spray assembly can also comprise one or more the first inlet pipe (not shown)s, described the first inlet pipe runs through described refrigerating unit 200 and connects described the first diffuser 300, described the first gas enters described the first diffuser 300 from described the first inlet pipe, and enters reaction zone from the first pore of the first diffuser 300.
Described spray assembly can also comprise that at least one runs through the second inlet pipe of refrigerating unit 200 and the first diffuser 300, described at least one, the second inlet pipe is connected with described gas diffusion tube 410, described at least one, the second inlet pipe can be connected on the device of same storage the second gas, described the second gas enters gas diffusion tube 410 from the second inlet pipe, and the second pore gas diffusion tube 410 enters reaction zone.The shape and size of each described gas diffusion tube 410 can be identical, also can be different.Optionally, described spray assembly can comprise multiple the second gas inlet pipes, and multiple gas inlet pipes are connected with described multiple gas diffusion tube 410 respectively.
Preferably, described gas diffusion tube 410 is arranged on the below of the first diffuser 300 equably, thereby makes the first gas and the second gas mix more even.
Preferably, described the first pore and the second pore are arranged on respectively in the first diffuser 300 and gas diffusion tube 410 equably, thereby the first gas and the second gas are evenly distributed above pedestal 100, have ensured the homogeneity of thin film deposition.The concrete number of described the first pore and the second pore and size are by the flow rate of the flow rate of the first gas, the second gas and react required the first gas and the total amount of the second gas determines.
Optionally, described the first diffuser 300 can also be circular propagation dish; Described the second diffuser 400 can also be annular diffuser tube; Described the first diffuser 300 and described the second diffuser 400 also can be Polygons etc., and it should not limit the scope of the invention at this.
Embodiment bis-
Fig. 4 is the structural representation of the embodiment of the present invention two CVD devices, and Fig. 5 is the structural representation along BB ' direction obtains in Fig. 4.Shown in Fig. 4 and Fig. 5, the difference of the present embodiment and embodiment mono-is: described the first diffuser 300 is circular gas diffusion plate, described the second diffuser 400 comprises some gas diffusion tube 410 and the air-guide disk 420 with some the second pores, described gas diffusion tube 410 is long strip shape, and described air-guide disk 420 is circular.Described spray assembly also comprises the second gas inlet pipe; Described the second gas inlet pipe is through refrigerating unit 200 and the first diffuser 300 center, described the second gas is successively by extremely described reaction zone of the second gas inlet pipe, air-guide disk 420, gas diffusion tube 410 and the second pore, described heating unit 120 is in heat-processed, and described the first diffuser 300 has different temperature from described the second diffuser 400.
The size of described gas diffusion tube 410 can be identical, also can be different.Preferably, described gas diffusion tube 410 measure-alike, and described gas diffusion tube 410 is evenly distributed in the first diffuser 300 belows, can ensure like this first gas and the second gas uniform and mix.
Preferably, described the first pore is evenly arranged on the first diffuser 300, described the second pore is evenly arranged in described gas diffusion tube 410, so also can make the first gas and the second gas uniform mix, and finally makes the homogeneity of deposit film on substrate 500.
Optionally, described the first diffuser 300 can also be rectangular gas diffusion plate; Described gas diffusion tube 410 can be fan-shaped; Described the first diffuser 300 and described gas diffusion tube 410 also can be Polygons, and it should not limit the scope of the invention at this.
In the present embodiment, pass through second gas inlet pipe and air-guide disk 420 by extremely each gas diffusion tube 410 of the second gas transmission, due to the shock absorption of described air-guide disk 420 to the second gas entering from described the second gas inlet pipe, the second gas can be assigned to uniformly in each gas diffusion tube 410 after the buffering of air-guide disk 420, thereby ensure the homogeneity of the second gas of ejection from gas diffusion tube 410.
Embodiment tri-
Fig. 6 is the structural representation of the embodiment of the present invention three CVD devices, and Fig. 7 is the structural representation along CC ' direction obtains in Fig. 6.Shown in Fig. 6 and Fig. 7, the difference of the present embodiment and embodiment mono-is: the gas diffusion tube 410 in described the second diffuser 400 is embedded in described the first diffuser 300, the one side in described gas diffusion tube 410 orientating reaction districts is provided with multiple the second pores, on described the first diffuser 300 orientating reaction districts and not corresponding with gas diffusion tube 410 position, be provided with multiple the first pores, described heating unit 120 is in heat-processed, and described the first diffuser 300 has different temperature from described the second diffuser 400.
Preferably, described gas diffusion tube 410 is evenly distributed in described the first diffuser 300, to the first gas is mixed with the second gas uniform, finally makes the homogeneity of deposit film on substrate 500.
The second diffuser 400 described in the present embodiment is embedded in described the first diffuser 300, thereby has saved space.
Embodiment tetra-
Fig. 8 is the structural representation of the embodiment of the present invention four CVD devices, and Fig. 9 is the structural representation that sprays assembly upper surface in Fig. 8, and Figure 10 is the structural representation that sprays assembly lower surface in Fig. 8.Shown in Fig. 8, Fig. 9 and Figure 10, the difference of the present embodiment and embodiment tri-is: described the first diffuser 300 is diffusion disc, described diffusion disc has upper surface and the lower surface relative with described upper surface, described upper surface is close to described refrigerating unit 200, described upper surface is provided with the first inlet mouth 310 and gaseous diffusion cell 320, and described the first inlet mouth 310 connects described gaseous diffusion cell 320; Described lower surface is provided with some the first pore (not shown)s, and described the first pore is communicated with described gaseous diffusion cell 320 through described diffusion disc; Described the first gas enters described reaction zone via described the first inlet mouth 310, gaseous diffusion cell 320 and described the first pore successively; Described the second diffuser 400 comprises air-guide disk 450 and some gas diffusion tube 430; Described spray assembly also comprises the second induction trunk 440; Described the second induction trunk 440 runs through the center of described diffusion disc and is communicated with described air-guide disk 450; In described gas diffusion tube 430, be provided with some the second pore (not shown)s, one end of described gas diffusion tube 430 is communicated with described air-guide disk 450; Described the second gas enters described reaction zone via described the second induction trunk 440, air-guide disk 450, gas diffusion tube 430 and described the second pore successively.
Particularly, described gaseous diffusion cell 320 has at least one first spreading grooves 321 and multiple the second spreading grooves 322, described the first spreading grooves 321 is along week of described diffusion disc along annular setting, described the second spreading grooves 322 is along the radial direction setting of described diffusion disc, described the first spreading grooves 321 and described the second spreading grooves 322 are communicated with, and the first gas flows to described the second spreading grooves 322 by described the first spreading grooves 321.Preferably, the first pore described in the present embodiment is evenly arranged in described the second spreading grooves 322, so that described the first gas uniform is assigned to described reaction zone.
For simplicity, described in the present embodiment, the second gaseous diffusion cell 322 is 6.The number of described the second gaseous diffusion cell 322 can also be more than or equal to 3 and be less than or equal to 100, and preferably, the number of described the second gaseous diffusion cell 322 is more than or equal to 10 and be less than or equal to 50.
Described the first inlet mouth 310 can be one or more.Preferably, shown in Fig. 8 and Fig. 9, described the first inlet mouth 310 is set to two, is separately positioned on the relative both sides of described diffusion disc.
Further, described the first inlet mouth 310 is arranged in described the first spreading grooves 321, and between adjacent two described the second spreading grooves 322 and described the first spreading grooves 321 connectivity points, thereby make the first gas that enters into the first spreading grooves 321 after the first spreading grooves 321 bufferings, enter again in described the second spreading grooves 322, thereby make the first gas distributed uniform in each second gaseous diffusion cell 322.
Preferably, being shaped as of described gas diffusion tube 430 is fan-shaped, and the second pore is evenly arranged in described gas diffusion tube 430, so that described the second gas uniform drains into described reaction zone.The length of described each gas diffusion tube 430 can equate, also can be unequal.Preferably, shown in Figure 10, described each gas diffusion tube 430 is isometric, and is radial around described air-guide disk 450 and evenly arranges, and can make full use of like this space, and make described the second gas uniform discharged to described reaction zone.
Further, shown in Figure 10, the length of described gas diffusion tube 430 equals the poor of the radius of described diffusion disc and described air-guide disk 450 radiuses; Between described gas diffusion tube 430 and described diffusion disc, there is interval, and do not carry out thermal conduction; And can stop influencing each other of temperature between described the first gas and described the second gas, it is more accurate to make described the first gas temperature and described the second gas temperature control.
Preferably, described in the present embodiment, the second diffuser 400 is embedded in the first diffuser 300.
The shape of described the first diffuser 300 and gas diffusion tube 430 can also be respectively rectangle and long strip shape; The shape of described the first diffuser 300 and gas diffusion tube 430 can also be Polygons, and it should not limit the scope of the invention at this.
Spray assembly in above embodiment includes two diffusers, by making the heat-conduction coefficient difference of two diffusers, and makes the temperature difference of two diffusers.It should be noted that, spray assembly can also comprise three and three above diffusers, similarly, by by refrigerating unit and the partly or entirely stacked setting of diffuser, and make the heat-conduction coefficient difference of part or all of diffuser, can make equally the temperature difference of part or all of diffuser.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (23)
1. a chemical vapor deposition unit, comprise: reaction chamber, refrigerating unit, the pedestal that is positioned at the spray assembly at described reaction chamber top and is oppositely arranged with described spray assembly, described pedestal has heating unit, described spray assembly comprises the first diffuser and the second diffuser, for respectively by the first gas and the second gas transmission to the reaction zone between pedestal and spray assembly; It is characterized in that, described refrigerating unit, described the first diffuser and described the second diffuser are cascading, described the second diffuser is positioned at towards a side of described pedestal and compared to more pedestal described in neighbour of described refrigerating unit, described the first diffuser, the heat-conduction coefficient of described the first diffuser is greater than the heat-conduction coefficient of described the second diffuser, described heating unit is in heat-processed, and described the first diffuser has different temperature from described the second diffuser.
2. chemical vapor deposition unit as claimed in claim 1, is characterized in that, the material of described the first diffuser is graphite or silicon carbide, and the material of described the second diffuser comprises steel.
3. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described the first gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
4. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described the second gas comprises one or more in reacting precursor, carrier gas, sweeping gas.
5. chemical vapor deposition unit as claimed in claim 1, is characterized in that, described the first diffuser is used for transmitting III family metal organic source, and described the second diffuser is used for transmitting V family hydride source.
6. chemical vapor deposition unit as claimed in claim 5, is characterized in that, described III family metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3one or more in gas.
7. chemical vapor deposition unit as claimed in claim 5, is characterized in that, described V family hydride source comprises NH
3, PH
3, AsH
3one or more in gas.
8. chemical vapor deposition unit as claimed in claim 5, is characterized in that, described heating unit is in heat-processed, and the temperature of described the first diffuser is less than the temperature of described the second diffuser.
9. chemical vapor deposition unit as claimed in claim 8, is characterized in that, the temperature head between described the first diffuser and described the second diffuser is more than or equal to 100 DEG C and be less than or equal to 600 DEG C.
10. chemical vapor deposition unit as claimed in claim 9, is characterized in that, the temperature of described the first diffuser is more than or equal to 35 DEG C and be less than or equal to 600 DEG C, and the temperature of described the second diffuser is more than or equal to 135 DEG C and be less than or equal to 800 DEG C.
11. chemical vapor deposition units as claimed in claim 1, is characterized in that, also comprise: rotary drive unit, described rotary drive unit drives described pedestal or spray assembly to be rotated in the deposition process of described chemical vapor deposition unit.
12. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described the second diffuser comprises some gas diffusion tube with some the second pores, described gas diffusion tube is embedded among described the first diffuser at least partly, and exposes described the second pore to described reaction zone so that the second gas is discharged from described the second pore.
13. chemical vapor deposition units as claimed in claim 1, is characterized in that, between described the second diffuser and described the first diffuser, have interval, and do not carry out thermal conduction between described the second diffuser and described the first diffuser.
14. chemical vapor deposition units as claimed in claim 1, is characterized in that, described refrigerating unit has cooling channel, in order to pass into cooling gas or cooling liqs.
15. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described the first diffuser is diffusion disc, described diffusion disc has upper surface and the lower surface relative with described upper surface, described upper surface is close to described refrigerating unit, described upper surface is provided with the first inlet mouth and gaseous diffusion cell, and described lower surface is provided with some the first pores; Described the first gas enters described reaction zone via described the first inlet mouth, gaseous diffusion cell and described the first pore successively.
16. chemical vapor deposition units as claimed in claim 15, it is characterized in that, described gaseous diffusion cell has at least one first spreading grooves and multiple the second spreading grooves, described the first spreading grooves is along week of described diffusion disc along annular setting, described the second spreading grooves is along the radial direction setting of described diffusion disc, described the second spreading grooves connects described the first spreading grooves, described the second gas flows into described the second spreading grooves by described the first spreading grooves, and described the first pore connects described the second spreading grooves.
17. chemical vapor deposition units as claimed in claim 16, is characterized in that, described the first inlet mouth is set to two, are separately positioned on the relative both sides of described diffusion disc.
18. chemical vapor deposition units as claimed in claim 16, is characterized in that, arbitrary described the first inlet mouth is arranged in described the first spreading grooves, and described in adjacent two between the second spreading grooves.
19. chemical vapor deposition units as claimed in claim 15, is characterized in that, described the second diffuser comprises air-guide disk and some gas diffusion tube; Described spray assembly also comprises the second induction trunk, and described the second induction trunk runs through the center of described diffusion disc and is connected with described air-guide disk; In described gas diffusion tube, be provided with some the second pores, one end of described gas diffusion tube is communicated with described air-guide disk; Described the second gas enters described reaction zone via described the second induction trunk, air-guide disk, gas diffusion tube and described the second pore successively.
20. chemical vapor deposition units as claimed in claim 19, is characterized in that, described each gas diffusion tube is isometric, and are radial around described air-guide disk and evenly arrange.
21. chemical vapor deposition units as claimed in claim 19, is characterized in that, between described gas diffusion tube and described diffusion disc, have interval, and do not carry out thermal conduction between gas diffusion tube and described diffusion disc.
22. chemical vapor deposition units as claimed in claim 1, it is characterized in that, described chemical vapor deposition unit is organometallics chemical vapor deposition unit, low-pressure chemical vapor deposition device, plasma CVD device or apparatus for atomic layer deposition.
23. chemical vapor deposition units as claimed in claim 1, is characterized in that, the heat emissivity coefficient of described the first diffuser is less than or equal to the heat emissivity coefficient of described the second diffuser.
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| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| CN101365823A (en) * | 2006-06-20 | 2009-02-11 | 东京毅力科创株式会社 | Film forming apparatus and film forming method |
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| JP2010238831A (en) * | 2009-03-31 | 2010-10-21 | Sharp Corp | Vapor phase deposition device, and vapor phase deposition method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5624498A (en) * | 1993-12-22 | 1997-04-29 | Samsung Electronics Co., Ltd. | Showerhead for a gas supplying apparatus |
| CN101365823A (en) * | 2006-06-20 | 2009-02-11 | 东京毅力科创株式会社 | Film forming apparatus and film forming method |
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