CN203159707U

CN203159707U - Metal-organic chemical vapor deposition (MOCVD) apparatus having multiple sub-reactor structures

Info

Publication number: CN203159707U
Application number: CN 201220610564
Authority: CN
Inventors: 刘祥林
Original assignee: Individual
Current assignee: Individual
Priority date: 2012-11-19
Filing date: 2012-11-19
Publication date: 2013-08-28
Anticipated expiration: 2022-11-19

Abstract

The utility model relates to a metal-organic chemical vapor deposition (MOCVD) apparatus having multiple sub-reactors. The apparatus comprises a gas path device and multiple sub-reactors. By sharing the gas path apparatus and a gas distribution device, at least two sets of identical MOCVD sub-reactors are simultaneously utilized under the identical conditions to obtain consistent epitaxial film or device structures. By increasing the number of the sub-reactors instead of increasing the capacity of a single reactor to improve the batch yield of the MOCVD apparatus, the utility model overcomes the difficulty in flow field and thermal field control caused by increasing the capacity of a single reactor, thus obtaining the MOCVD apparatus which can realize large-scale production.

Description

Metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor

1 technical field

The present invention relates to semiconductor devices manufacturing technology field, particularly metal organic vapor phase epitaxy equipment manufacturing technology field.

2. background technology

Metal-organic chemical vapor deposition equipment (Metal Organic Chemical Vapor Deposition, be called for short MOCVD) method, be also referred to as gas phase epitaxy of metal organic compound (Organic Metal Vapor Phase Epitaxy, be called for short OMVPE) method is the advanced person's that grows up the seventies in last century epitaxy method.Because it can be used for the growth of large area film, the Material Used scope is wide, therefore is widely used in the growth and research of semiconductor film material and device.Because growth quality and the speed of growth of MOCVD equipment are suitable for carrying out scale operation, especially the production of III-N compound material has monopoly position.

Along with the development of MOCVD technology with to the increase of semiconducter device demands such as photodiode, type of production MOCVD equipment has had increasing single output.Batch output that increases MOCVD can reduce the growth cost of monolithic or single device.The GaN base device that the once production multi-disc of MOCVD equipment of the employing TurboDisk technology of the Vecco company of the U.S. is 2 inches.The Plant-DiskRotation technology of Aixtron company of Germany and the MOCVD equipment of Close Coupled Shower-head technology can once be produced 42 2 " the GaN base device.

But the reaction chamber of these two companies all is a big reactor, and a plurality of substrates are arranged above.Reaction chamber is more big, more is easy to generate air whirl, and is difficult to guarantee that all underlayer temperatures are the same.Along with the expansion of MOCVD equipment, the control difficulty in corresponding flow field and temperature field increases, and quality and the consistence of material growth are difficult to control more.And along with the increase of MOCVD equipment, the volume of parts such as reaction chamber metal physical construction and well heater increases and fault increases, and makes the minimizing in work-ing life of MOCVD equipment.

3 summary of the invention

The objective of the invention is to, at deficiency and the high batch output MOCVD device requirement of existing type of production MOCVD equipment manufacturing technology, this patent has proposed a kind of MOCVD equipment with a plurality of sub-structure of reactor, and this apparatus processing is simple, and stdn is very high.The epitaxial wafer homogeneity of growing is fine.

MOCVD equipment with a plurality of sub-reactors of the present invention comprises that the sub-reactor that shares gas circuit 101, pressure control system 170, a plurality of sub-reactors 161 and each sub-reactor correspondence divides parts such as device of air 111, the even gas hood 121 of sub-reactor, sub-reactor substrate pallet 131, sub-reactor heaters 141, sub-reactor turning axle 151 etc.

It is characterized in that each reaction chamber 160 comprises at least two identical sub-reactors 161, divide device of air 111 to be connected with shared gas circuit 101 by sub-reactor, utilize sub-reactor to divide device of air 111 from share gas circuit 101, to obtain growth gasses.Divide device of air 111 controls to feed the gas flow of each sub-reactor 161 by sub-reactor, make the reactant gases of each sub-reactor 161 identical with carrier gas flux; Each sub-reactor 161 has identical sub-reactor heaters 141, sub-reactor turning axle 151 etc. to obtain same epitaxy condition; The a plurality of sub-reactor 161 of each reaction chamber 160 is put into one and is shared vacuum system, has shared pressure control system 170 and exhaust gas processing device (not shown).

The sub-reactor 161 of in the reaction chamber 160 each has identical structure, can be vertical sub-reactor, also can be the sub-reactor of level, but the structure of each sub-reactor 161 is consistent.So-called " vertical sub-reactor ", the air-flow that refers in sub-reactor flows from top to bottom; So-called " the sub-reactor of level " refers to air-flow in sub-reactor and is from an effluent to opposite side, is that horizontal direction flows.Increase the scale of MOCVD equipment by the number that increases reactor 161, improve the output of single extension.In the sub-reactor 161 of in the reaction chamber 160 all identical sub-reactor heaters 141 is arranged, obtain identical temperature by independent control, can obtain identical growth pressure by the pressure control system 170 that shares.

Be further described below by embodiment and accompanying drawing thereof.

Description of drawings

Fig. 1: the MOCVD equipment synoptic diagram of a reaction chamber and four vertical sub-reactors.

Fig. 2: the MOCVD equipment synoptic diagram of a reaction chamber and two sub-reactors of level.

Embodiment

Embodiment one:

101 for sharing gas circuit among Fig. 1, and 111 divide device of air for sub-reactor, obtain the needed various atmosphere of MOCVD extension from share gas circuit 101, control the flow of all gases.121 is the even gas hood of sub-reactor, controls the air-flow condition in the sub-reactor.131 is sub-reactor substrate pallet, by sub-reactor turning axle 151 driven rotary.141 is sub-reactor heaters, control MOCVD temperature of reaction.160 is reaction chamber, and 170 is pressure control system, the pressure of control entire reaction chamber 160.In reaction chamber, can see 4 identical vertical sub-reactors 161, obtain consistent epitaxial film or device architecture by stream field, temperature field with the control of various flow rate of reactive gas.

In actual applications, sub-reactor substrate pallet 131 can carry 3～7 2 " substrate, each sub-reactor 161 once can be produced 72 " epitaxial wafer, and whole M OCVD equipment once can be produced 28 2 " epitaxial wafer.By the number of the sub-reactor 161 in the increase reaction chamber 160 and the size of sub-reactor substrate pallet 131, can further increase batch output of MOCVD equipment.

Embodiment two:

Present embodiment, basic identical with embodiment one, all be in a reaction chamber 160, to contain a plurality of sub-reactors 161, difference be exactly in the present embodiment each sub-reactor 161 are the sub-reactors of level, and each sub-reactor is vertical sub-reactor in the embodiment one.

101 for sharing gas circuit among Fig. 2, and 111 divide device of air for sub-reactor, obtain the needed various atmosphere of MOCVD extension from share gas circuit, control the flow of all gases.121 is the even gas hood of sub-reactor, controls the air-flow condition in the sub-reactor.131 is sub-reactor substrate pallet, is driven by sub-reactor turning axle 151 and rotates.141 is sub-reactor heaters, control MOCVD temperature of reaction.160 is reaction chamber, and 170 is pressure control system, the pressure of control entire reaction chamber 160.In reaction chamber 160, can see 2 sub-reactors 161 of identical level, obtain consistent epitaxial film or device architecture by stream field, temperature field with the control of various flow rate of reactive gas.

In actual applications, sub-reactor substrate pallet 131 can carry 3～7 2 " substrate, each sub-reactor once can be produced 72 " epitaxial wafer, and whole M OCVD equipment once can be produced 14 2 " epitaxial wafer.By the number of the sub-reactor 161 in the increase reaction chamber 160 and the size of sub-reactor substrate pallet 131, can further increase batch output of MOCVD equipment.

Claims

1. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor is characterized in that, comprising:

Share gas circuit (101), described shared gas circuit (101) comprises MO source, nitrogen, ammonia, hydrogen gas circuit; Reaction chamber (160), each reaction chamber comprise a plurality of sub-reactors (161);

Sub-reactor divides device of air (111), obtains the needed various atmosphere of MOCVD extension the sub-reactor (161) from described shared gas circuit (101), the flow of control all gases;

Pressure control system (170), the pressure of control entire reaction chamber (160);

Wherein said sub-reactor (161) comprising:

Sub-reactor is spared gas hood (121), controls the air-flow condition in the sub-reactor;

Sub-reactor turning axle (151) drives sub-reactor substrate pallet (131) rotation;

Sub-reactor substrate pallet (131) is by sub-reactor turning axle (151) driven rotary;

Sub-reactor heaters (141) is used for antithetical phrase reactor substrate pallet (131) heating.

2. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1, it is characterized in that, reaction chamber (160) comprises a plurality of identical sub-reactors (161), and this a little reactor (161) divides device of air (111) to be connected with shared gas circuit (101) by sub-reactor; Obtain consistent epitaxial film or device architecture by flow field, temperature field and various flow rate of reactive gas controls to each sub-reactor (161).

3. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1 is characterized in that, reaction chamber (160) can comprise the sub-reactor (161) more than 2 or 2.

4. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1, it is characterized in that, sub-reactor (161) is vertical sub-reactor or the sub-reactor of level, but the structure unanimity of all the sub-reactors (161) in each equipment.

5. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1, it is characterized in that, a plurality of sub-reactors (161) utilize sub-reactor to divide device of air (111) to obtain growth gasses from share gas circuit (101), the gas flow that utilizes sub-reactor to divide device of air (111) control to feed each sub-reactor (161) makes the flow of the reactant gases of sub-reactor (161) and carrier gas identical.

6. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1, it is characterized in that, a plurality of sub-reactors (161) have identical sub-reactor heaters (141), obtain identical temperature by independent control, type of heating is resistive heating, ratio-frequency heating or optical radiation heating.

7. the metal organic chemical vapor deposition equipment with a plurality of sub-structure of reactor as claimed in claim 1, it is characterized in that, a plurality of sub-reactor (161) in each reaction chamber (160) shares a pressure control system (170), to obtain identical growth pressure.