CN202246871U - Integrated vacuum coating equipment with multi-cavity star-type structure - Google Patents
Integrated vacuum coating equipment with multi-cavity star-type structure Download PDFInfo
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- CN202246871U CN202246871U CN2011203730154U CN201120373015U CN202246871U CN 202246871 U CN202246871 U CN 202246871U CN 2011203730154 U CN2011203730154 U CN 2011203730154U CN 201120373015 U CN201120373015 U CN 201120373015U CN 202246871 U CN202246871 U CN 202246871U
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Abstract
The utility model relates to integrated vacuum coating equipment with a multi-cavity star-type structure, and belongs to the technical field of vapor phase deposition equipment for preparing membrane materials and devices in semiconductor or photovoltaic industry. According to the technical scheme, the integrated vacuum coating equipment comprises a central transmission chamber (1) and a plurality of vacuum reaction chambers and a sheet inlet and outlet chamber (6) which are enclosed at the periphery of the central transmission chamber in a star-type distribution mode, wherein each reaction chamber and the sheet inlet and outlet chamber are connected with the central transmission chamber by a high vacuum gate valve (7). The integrated vacuum coating equipment has the advantages that: the vacuum reaction chambers with different functions and the sheet inlet and outlet chamber are enclosed at the periphery of the central transmission chamber in a star-type distribution mode, and each reaction chamber and the sheet inlet and outlet chamber are connected with the central transmission chamber by the high vacuum gate valve, so that continuous coating is performed under vacuum environment, a substrate can be transmitted among the chambers with different functions under the vacuum environment, cross contamination among the chambers is avoided, and vacuum degree is ensured.
Description
Technical field
The utility model relates to a kind of integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment, belongs to the vapor deposition apparatus technical field that is used to prepare thin-film material and device in semi-conductor or the photovoltaic industry.
Background technology
Vacuum coating technology is widely used in fields such as semi-conductor, photovoltaic, TFT-LCD and LED illumination; Be main with plasma activated chemical vapour deposition (PECVD), magnetron sputtering technique (Magnetron Sputtering), hot-wire chemical gas-phase deposition (HWCVD) and metal-organic chemical vapor deposition equipment (MOCVD) technology again wherein, be used for the various thin film semiconductor materials of growing high-quality under high vacuum environment.Under a lot of situation; Vacuum apparatus only designs simple function; Use different vacuum coating technology continuous growth and form in the process of device at needs; The erosion of humidity, oxidation and dust inevitably need the substrate taking-up be exposed to atmospheric environment, owing to possibly cause material property to descend or component failure.Therefore, need a kind of substrate that can under vacuum environment, carry out to transmit to guarantee in different reaction chambers, to accomplish the filming equipment of the continuous growth of high performance material.
The utility model content
The utility model purpose provides a kind of integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment, is used for the continuous coating under the vacuum environment, and the assurance substrate is accomplished the transmission between the difference in functionality chamber under vacuum environment, solve the problems referred to above that background technology exists.
The technical scheme of the utility model is:
A kind of integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment; Comprise a central transfer chamber, with star-like mode of arranging be periphery a plurality of vacuum reaction chambers and a turnover sheet chamber around this central transfer chamber, link to each other through the high vacuum family of power and influence between each reaction chamber and turnover sheet chamber and the central transfer chamber.
Size and system function demand is different per sample, around central transfer chamber, arranges five to seven reaction chamber positions and a turnover sheet chamber with star-like mode of arranging.
According to the similarities and differences of different semiconducter device for the continuous coating material property, reaction chamber is: PECVD reaction chamber, magnetron sputtering reaction chamber, HWCVD reaction chamber and MOCVD reaction chamber.Wherein, the characteristics of PECVD reaction chamber technology are the energy decomposition reaction gas that utilizes plasma body photoglow to produce, and are sinking to the bottom surface bonding and form thin-film material again, and composition depends on the reactant gases type that is fed; The magnetron sputtering reaction chamber then is to use the particle bombardment target material surface that the plasma body aura produces, make desire growth material with the mode of physical vapor deposition in the substrate surface film forming; The characteristics of HWCVD reaction chamber are to utilize the high-temperature decomposition reaction gas that heated filament produces and form film at substrate surface; The MOCVD reaction chamber relies on the heat of well heater to impel metallorganics and oxidizing gas to form thin-film material in substrate surface generation redox reaction.
A high vacuum mechanical manipulator is installed in central transfer chamber, is used to transmit substrate between each reaction chamber and the turnover of substrate.Comprise PECVD reaction chamber, magnetron sputtering reaction chamber, HWCVD reaction chamber and MOCVD reaction chamber and design simultaneously in a star-like vacuum coating system, can guarantee that sample does not expose atmosphere in continuous coating, thereby guarantee device quality.
Seal through metal flange and anaerobic copper band between family of power and influence both sides and each reaction chamber and the turnover sheet chamber.
The beneficial effect of the utility model: the vacuum reaction chamber and a turnover sheet chamber that will have difference in functionality are periphery around a central transfer chamber with star-like mode of arranging; Link to each other with the high vacuum family of power and influence between each reaction chamber and turnover sheet chamber and the central transfer chamber; Be used for the continuous coating under the vacuum environment; The assurance substrate is accomplished the transmission between the difference in functionality chamber under vacuum environment, guarantee to prevent the crossed contamination and assurance vacuum tightness between each chamber.
Description of drawings
Fig. 1 is the utility model example structure synoptic diagram;
Among the figure: central transfer chamber 1, PECVD reaction chamber 2, magnetron sputtering reaction chamber 3, HWCVD reaction chamber 4, MOCVD reaction chamber 5, turnover sheet chamber 6, the family of power and influence 7.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described further through embodiment.
A kind of integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment; Comprise a central transfer chamber 1, with star-like mode of arranging be periphery a plurality of vacuum reaction chambers and a turnover sheet chamber 6 around this central transfer chamber, link to each other through the high vacuum family of power and influence 7 between each reaction chamber and turnover sheet chamber and the central transfer chamber.
Around central transfer chamber, arrange seven reaction chamber positions and a turnover sheet chamber 6 with star-like mode of arranging; Seven reaction chambers are: four PECVD reaction chambers 2, magnetron sputtering reaction chamber 3, a HWCVD reaction chamber 4 and a MOCVD reaction chamber 5.
A high vacuum mechanical manipulator is installed in central transfer chamber, is used to transmit substrate between each reaction chamber and the turnover of substrate.
Design eight transmission mouthful around the central transfer chamber altogether, one of them Position Design is PECVD chamber 2 for turnover sheet chamber 6, four Position Design, magnetron sputtering chamber 3, HWCVD chamber 4 and MOCVD chamber 5 each one.Separate with the family of power and influence 7 between each reaction chamber and turnover sheet chamber and the central transfer chamber, seal through metal flange and anaerobic copper band between family of power and influence both sides and each reaction chamber and the turnover sheet chamber.This design can guarantee to remain at high vacuum environment when a sample is accomplished successive sedimentation between the chamber that possesses different plated film functions, avoids oxidation and pollution.
Claims (4)
1. integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment; It is characterized in that comprising a central transfer chamber (1), with star-like mode of arranging be periphery a plurality of vacuum reaction chambers and a turnover sheet chamber (6) around this central transfer chamber, link to each other through the high vacuum family of power and influence (7) between each reaction chamber and turnover sheet chamber and the central transfer chamber.
2. the integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipment according to claim 1 is characterized in that reaction chamber is: PECVD reaction chamber (2), magnetron sputtering reaction chamber (3), HWCVD reaction chamber (4) and MOCVD reaction chamber (5).
3. according to claim 1 or 2 said integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipments, it is characterized in that installing in the central transfer chamber high vacuum mechanical manipulator.
4. according to claim 1 or 2 said integrated multi-cavity chamber hub-and-spoke configuration vacuum coating film equipments, it is characterized in that sealing through metal flange and anaerobic copper band between family of power and influence both sides and each reaction chamber and the turnover sheet chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203730154U CN202246871U (en) | 2011-10-08 | 2011-10-08 | Integrated vacuum coating equipment with multi-cavity star-type structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203730154U CN202246871U (en) | 2011-10-08 | 2011-10-08 | Integrated vacuum coating equipment with multi-cavity star-type structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202246871U true CN202246871U (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011203730154U Expired - Fee Related CN202246871U (en) | 2011-10-08 | 2011-10-08 | Integrated vacuum coating equipment with multi-cavity star-type structure |
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| CN (1) | CN202246871U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215556A (en) * | 2013-05-13 | 2013-07-24 | 日出东方太阳能股份有限公司 | Rapid deposition process for combined-type spectrally selective absorption film layer |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN105543807A (en) * | 2015-12-15 | 2016-05-04 | 华中科技大学 | Temperature change film deposition system |
| CN110029323A (en) * | 2019-05-14 | 2019-07-19 | 枣庄维信诺电子科技有限公司 | A kind of vacuum coating equipment |
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device |
| CN110838532A (en) * | 2018-08-17 | 2020-02-25 | 中智(泰兴)电力科技有限公司 | 8-cavity vertical HWCVD-PVD integrated silicon wafer coating process |
| CN113073305A (en) * | 2020-01-06 | 2021-07-06 | 重庆康佳光电技术研究院有限公司 | Deposition equipment and deposition method thereof |
| WO2022151644A1 (en) * | 2021-01-18 | 2022-07-21 | 中国电子科技集团公司第四十八研究所 | Ion beam coating device and coating method therefor |
-
2011
- 2011-10-08 CN CN2011203730154U patent/CN202246871U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215556A (en) * | 2013-05-13 | 2013-07-24 | 日出东方太阳能股份有限公司 | Rapid deposition process for combined-type spectrally selective absorption film layer |
| CN103215556B (en) * | 2013-05-13 | 2015-11-18 | 日出东方太阳能股份有限公司 | A kind of built-up type spectral selectivity absorbing membranous layer quick sedimentation process |
| CN104630737A (en) * | 2013-11-13 | 2015-05-20 | 中国科学院沈阳科学仪器股份有限公司 | Transmission system used in five-chamber automatic electron beam deposition system |
| CN105543807A (en) * | 2015-12-15 | 2016-05-04 | 华中科技大学 | Temperature change film deposition system |
| CN105543807B (en) * | 2015-12-15 | 2018-06-26 | 华中科技大学 | A kind of alternating temperature thin film deposition system |
| CN110838532A (en) * | 2018-08-17 | 2020-02-25 | 中智(泰兴)电力科技有限公司 | 8-cavity vertical HWCVD-PVD integrated silicon wafer coating process |
| CN110029323A (en) * | 2019-05-14 | 2019-07-19 | 枣庄维信诺电子科技有限公司 | A kind of vacuum coating equipment |
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device |
| CN113073305A (en) * | 2020-01-06 | 2021-07-06 | 重庆康佳光电技术研究院有限公司 | Deposition equipment and deposition method thereof |
| WO2022151644A1 (en) * | 2021-01-18 | 2022-07-21 | 中国电子科技集团公司第四十八研究所 | Ion beam coating device and coating method therefor |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20141008 |
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| EXPY | Termination of patent right or utility model |