CN202116646U

CN202116646U - Multi-channel independent gas-supply plasma enhanced chemical vapor deposition (PECVD) gas supply deposition system

Info

Publication number: CN202116646U
Application number: CN2011201380777U
Authority: CN
Inventors: 石劲超
Original assignee: BRIGHT SOLAR ENERGY Co Ltd
Current assignee: BRIGHT SOLAR ENERGY Co Ltd
Priority date: 2011-05-04
Filing date: 2011-05-04
Publication date: 2012-01-18
Anticipated expiration: 2021-05-04

Abstract

The utility model relates to a multi-channel independent gas-supply plasma enhanced chemical vapor deposition (PECVD) gas supply deposition system, which comprises a disposition tank. The middle portion of the upper surface of the deposition tank is provided with a row of ammonia discharging hole, and edges of the upper side and the lower side of the upper surface of the deposition tank are respectively provided with a row of silicane discharging holes. The multi-channel independent gas-supply PECVD gas supply deposition system is characterized in that a left side ammonia hole, a middle side ammonia hole and a right side ammonia hole are respectively connected with a first special gas pipeline, a second special gas pipeline and a third special gas pipeline. A left side silicane hole, a middle side silicane hole and a right side silicane hole are respectively connected with a fourth special gas pipeline, a fifth gas pipeline and a sixth special gas pipeline. The multi-channel independent gas-supply PECVD gas supply deposition system is flexible in gas supply method and can independently adjust flow of reaction gas in a left zone, a middle zone and a right zone of a silicon wafer carrier plate according to technological requirements, thereby effectively resolving the problem that the uniformity of the thickness of coating films of left, middle and right parallel silicon wafers and the refractive index is poor. The problem is caused by blocking of a left gas hole, a middle gas hole and a right gas hole, change of gas flow, uniformity of a temperature field, attenuation of microwave power and the like.

Description

Multichannel independent gas supply formula PECVD air feed depositing system

Technical field

The utility model relates to a kind of multichannel independent gas supply formula PECVD air feed depositing system, belongs to manufacture of solar cells manufacturing technology field.

Background technology

The PECVD coating system is the key equipment in the solar battery sheet production process.The PECVD know-why is to utilize low-temperature plasma to make energy source; Sample places on the negative electrode of photoglow under the subatmospheric; Utilize photoglow (or adding heating element in addition) to make sample be warmed up to predetermined temperature, feed an amount of reactant gases then, gas is through series of chemical and plasma reaction; Form the needed solid film of technology at sample surfaces, play the effect of antireflective and passivating solar battery surface.

There is multiple mode to realize the PECVD technology at present; Wherein the microwave indirect method realizes that the board-like PECVD system of plasma deposition is widely used in solar cell manufacturing field; It is packed silicon chip to be processed in the support plate of graphite or carbon-to-carbon material, general on same support plate the individual solar battery sheet of arrangement 6*11 (arrangement mode that other also can be arranged) of rule, support plate is from feeding platform transmission access arrangement feeding preheating chamber afterwards; Get into the technological reaction chamber after forvacuum and the preheating immediately; Be nearly vacuum state in the reaction chamber, through have the sedimentation tank of pore, from pore export evenly by reactant gases for support plate; Under microwave, its photoglow is formed plasma body, plasma and silicon chip surface reactive deposition form one deck silicon nitride film.The sample silicon chip got into the cooling discharging chamber after reaction was accomplished, and the cooling back is sent blanking bench at discharge pedestal back to through reflux and reclaimed the sample silicon chip that machines.

As shown in Figure 1, be silicon chip carrying board structure synoptic diagram, embedded 6*11 silicon chip bearing frame minor structure 12.As shown in Figure 2; Be traditional air feed depositing system structural representation; Described air feed depositing system comprises sedimentation tank 1, and the middle part of sedimentation tank 1 upper surface is provided with an ammonia excretion pore 2, and ammonia hole 2 is through independently special air pipe 10 output gases; The place, both sides of the edge of sedimentation tank body 1 upper surface is provided with row's silane hole 6 respectively, and every row's silane hole 6 is through independently special air pipe 11 output gases.

Because support plate is uniform motion cvd nitride silicon film from the top down; The silicon chip depositing operation of same column has only depositing time successively different up and down, and other conditions are all identical; So the silicon chip institute coating performance consistence of same column is fine about the support plate; And support plate is from left to right gone together silicon chip owing to receive that the left, center, right pore stops up, the variation of airshed, and the influence of the homogeneity of temperature and microwave power decay etc. often causes the consistence of thickness and specific refractory power of colleague's silicon chip institute plated film about support plate very poor.

Summary of the invention

The purpose of the utility model is to provide a kind of coating film thickness and specific refractory power of being positioned at colleague's silicon chip about support plate of can making to keep better conforming PECVD air feed depositing system.

In order to achieve the above object; The utility model provides a kind of multichannel independent gas supply formula PECVD air feed depositing system; Comprise sedimentation tank, the middle part of sedimentation tank upper surface is provided with an ammonia excretion pore, and the place, upper and lower both sides of the edge of sedimentation tank upper surface respectively is provided with row's silane hole; It is characterized in that the ammonia hole of left, center, right side connects the first special air pipe, the second special air pipe and the 3rd special air pipe respectively.

Preferably, the silane hole of left, center, right side connects the 4th special air pipe, the 5th special air pipe and the 6th special air pipe respectively.

The gas output in the sedimentation tank intermediary one ammonia excretion pore of the utility model and every row's silane hole of both sides is respectively by left, center, right three paths of independent air supply unit and the control of corresponding discharge meter.Plenum system is more flexible; Can be according to three regional flow rate of reactive gas in needs independent control silicon chip support plate left, center, right of technology; Can regulate separately; Sedimentation tank left, center, right pore stops up in the technological process, the variation of airshed thereby effectively solve, the thickness and the relatively poor problem of specific refractory power consistence of the support plate left, center, right that influence caused colleague's silicon chip institute plated film of the homogeneity of temperature field and microwave power decay etc.

Description of drawings

Fig. 1 is a silicon chip carrying board structure synoptic diagram;

Fig. 2 is traditional air feed depositing system structural representation;

Fig. 3 is a multichannel independent gas supply formula PECVD air feed depositing system structural representation.

Embodiment

Specify the utility model below in conjunction with embodiment.

Embodiment

As shown in Figure 3; Be multichannel independent gas supply formula PECVD air feed depositing system structural representation; Described multichannel independent gas supply formula PECVD air feed depositing system; Comprise sedimentation tank 1, the middle part of sedimentation tank 1 upper surface is provided with an ammonia excretion pore 2, and the place, upper and lower both sides of the edge of sedimentation tank 1 upper surface respectively is provided with row's silane hole 6; This air feed depositing system is made left, center, right three paths of independent air supply unit with the ammonia hole 2 of sedimentation tank 1 upper surface with the design of silane hole 6 air feed, and the ammonia hole 2 of left, center, right side connects first special air pipe 3, second special air pipe 4 and the 3rd special air pipe 5 respectively.The silane hole 6 of left, center, right side connects the 4th special air pipe the 7, the 5th special air pipe 8 and the 6th special air pipe 9 respectively.

In the general PECVD system process chamber 4 to 8 sedimentation units can be set; With each sedimentation unit described air feed depositing system of design cost utility model all; First special air pipe 3, second special air pipe the 4, the 3rd special air pipe the 5, the 4th special air pipe the 7, the 5th special air pipe 8 and the 6th special air pipe 9 are independent separately, through TC independent control flow.

During use; The coating process menu of at first selecting production to need at the terminal computer end; And a left side the 4th special air pipe the 7, the 5th special air pipe 8 and the silane flow rate of the 6th special air pipe 9 that the deposition airing system is set be 600sccm, and the ammonia flow of first special air pipe 3, the second special air pipe 4 and the 3rd special air pipe 5 is 1800sccm.Silicon chip to be processed is packed in the support plate; An arrangement 6*11 solar battery sheet of rule on support plate transmits access arrangement feeding preheating chamber with support plate from feeding platform afterwards, gets into the technological reaction chamber after forvacuum and the preheating immediately; Be nearly vacuum state in the reaction chamber; Support plate is evenly through the described deposition airing system of the utility model, and reactant gases forms plasma body with its photoglow from the output of sedimentation tank pore under microwave; Plasma and silicon chip surface reactive deposition form a layer thickness at 80 ± 5nm, and specific refractory power is controlled at 2.05 ± 0.5 silicon nitride film.

Sedimentation tank left, center, right pore stops up, the variation of airshed owing to can receive in the technological process; The influence of the homogeneity of temperature field and microwave power decay etc.; The thickness and the relatively poor situation of specific refractory power consistence of support plate left, center, right colleague's silicon chip institute plated film can often take place, and at this time can three tunnel silane flow rate of deposition airing system be adjusted into different sizes with three road ammonia flows.Such as when the left side silicon chip film-coated thinner thickness of first row has only 70nm, can the silane flow rate of the 4th special air pipe 7 that deposits airing system be adjusted to 650sccm, the ammonia flow of the first special air pipe 3 is adjusted to 1950sccm; When the silicon chip film-coated specific refractory power of the right first row is less when having only 1.95, can the silane flow rate of the 6th special air pipe 9 of deposition airing system be adjusted to 680sccm, other each road flows remain unchanged.

The sample silicon chip gets into the cooling discharging chamber after the plasma film coating reaction is accomplished at last, and the cooling back is sent blanking bench at discharge pedestal back to through reflux and reclaimed the sample silicon chip that machines.

Claims

1. multichannel independent gas supply formula PECVD air feed depositing system; Comprise sedimentation tank (1); The middle part of sedimentation tank (1) upper surface is provided with an ammonia excretion pore (2); The place, upper and lower both sides of the edge of sedimentation tank (1) upper surface respectively is provided with a row silane hole (6), it is characterized in that the ammonia hole (2) of left, center, right side connects the first special air pipe (3), the second special air pipe (4) and the 3rd special air pipe (5) respectively.

2. multichannel independent gas supply formula PECVD air feed depositing system as claimed in claim 1 is characterized in that the silane hole (6) of left, center, right side connects the 4th special air pipe (7), the 5th special air pipe (8) and the 6th special air pipe (9) respectively.